GB2607419B - Radio frequency switch biasing topologies - Google Patents

Radio frequency switch biasing topologies Download PDF

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Publication number
GB2607419B
GB2607419B GB2204530.6A GB202204530A GB2607419B GB 2607419 B GB2607419 B GB 2607419B GB 202204530 A GB202204530 A GB 202204530A GB 2607419 B GB2607419 B GB 2607419B
Authority
GB
United Kingdom
Prior art keywords
topologies
radio frequency
frequency switch
switch biasing
biasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2204530.6A
Other languages
English (en)
Other versions
GB202204530D0 (en
GB2607419A (en
Inventor
Ray Lam Lui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of GB202204530D0 publication Critical patent/GB202204530D0/en
Publication of GB2607419A publication Critical patent/GB2607419A/en
Application granted granted Critical
Publication of GB2607419B publication Critical patent/GB2607419B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6672—High-frequency adaptations for passive devices for integrated passive components, e.g. semiconductor device with passive components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/1607—Supply circuits
    • H04B1/1615—Switching on; Switching off, e.g. remotely

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
GB2204530.6A 2021-03-31 2022-03-30 Radio frequency switch biasing topologies Active GB2607419B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US202163169053P 2021-03-31 2021-03-31

Publications (3)

Publication Number Publication Date
GB202204530D0 GB202204530D0 (en) 2022-05-11
GB2607419A GB2607419A (en) 2022-12-07
GB2607419B true GB2607419B (en) 2024-05-01

Family

ID=81449570

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2204530.6A Active GB2607419B (en) 2021-03-31 2022-03-30 Radio frequency switch biasing topologies

Country Status (7)

Country Link
US (2) US11777499B2 (enExample)
JP (1) JP7724743B2 (enExample)
KR (1) KR20220136270A (enExample)
CN (1) CN115149935A (enExample)
DE (1) DE102022203190A1 (enExample)
GB (1) GB2607419B (enExample)
TW (1) TW202241062A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12040238B2 (en) 2013-11-12 2024-07-16 Skyworks Solutions, Inc. Radio-frequency switching devices having improved voltage handling capability
CN115580282A (zh) * 2022-10-31 2023-01-06 南京邮电大学 一种电感加载的超宽带半导体单刀双掷开关
CN116707503B (zh) * 2023-08-03 2023-12-01 中科海高(成都)电子技术有限公司 一种单刀双掷开关电路及工作方法、电子设备
US20250105861A1 (en) * 2023-09-22 2025-03-27 Northrop Grumman Systems Corporation Super-lattice castellated field effect transistor (slcfet) switch system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070290744A1 (en) * 2006-05-31 2007-12-20 Masakazu Adachi Radio frequency switching circuit, radio frequency switching device, and transmitter module device
US20150381171A1 (en) * 2012-07-07 2015-12-31 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4850553B2 (ja) * 2006-03-28 2012-01-11 新日本無線株式会社 スイッチ回路
JP4939857B2 (ja) * 2006-07-04 2012-05-30 パナソニック株式会社 スイッチ回路
JP4902323B2 (ja) * 2006-11-20 2012-03-21 パナソニック株式会社 半導体スイッチ回路
JP2012080247A (ja) * 2010-09-30 2012-04-19 Renesas Electronics Corp 半導体装置および携帯電話機
JP5251953B2 (ja) * 2010-09-30 2013-07-31 株式会社村田製作所 スイッチ回路、半導体装置及び携帯無線機
US8933533B2 (en) * 2012-07-05 2015-01-13 Infineon Technologies Austria Ag Solid-state bidirectional switch having a first and a second power-FET
JP2014053853A (ja) * 2012-09-10 2014-03-20 Renesas Electronics Corp 高周波切替モジュール及び高周波切替回路
KR101901693B1 (ko) * 2013-12-27 2018-09-27 삼성전기 주식회사 스위칭 회로 및 이를 포함하는 고주파 스위치
US10541682B2 (en) * 2016-11-10 2020-01-21 Skyworks Solutions, Inc. Manifolded gate resistance network

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070290744A1 (en) * 2006-05-31 2007-12-20 Masakazu Adachi Radio frequency switching circuit, radio frequency switching device, and transmitter module device
US20150381171A1 (en) * 2012-07-07 2015-12-31 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling

Also Published As

Publication number Publication date
US20240048143A1 (en) 2024-02-08
TW202241062A (zh) 2022-10-16
CN115149935A (zh) 2022-10-04
US12176893B2 (en) 2024-12-24
US11777499B2 (en) 2023-10-03
US20220321119A1 (en) 2022-10-06
GB202204530D0 (en) 2022-05-11
DE102022203190A1 (de) 2022-10-06
JP2022159156A (ja) 2022-10-17
JP7724743B2 (ja) 2025-08-18
GB2607419A (en) 2022-12-07
KR20220136270A (ko) 2022-10-07

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