JP7724743B2 - 無線周波数スイッチバイアシングトポロジー - Google Patents

無線周波数スイッチバイアシングトポロジー

Info

Publication number
JP7724743B2
JP7724743B2 JP2022056367A JP2022056367A JP7724743B2 JP 7724743 B2 JP7724743 B2 JP 7724743B2 JP 2022056367 A JP2022056367 A JP 2022056367A JP 2022056367 A JP2022056367 A JP 2022056367A JP 7724743 B2 JP7724743 B2 JP 7724743B2
Authority
JP
Japan
Prior art keywords
fet
coupled
switch
gate
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022056367A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022159156A5 (enExample
JP2022159156A (ja
Inventor
ルイ・レイ・ラム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of JP2022159156A publication Critical patent/JP2022159156A/ja
Publication of JP2022159156A5 publication Critical patent/JP2022159156A5/ja
Application granted granted Critical
Publication of JP7724743B2 publication Critical patent/JP7724743B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6672—High-frequency adaptations for passive devices for integrated passive components, e.g. semiconductor device with passive components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/1607—Supply circuits
    • H04B1/1615—Switching on; Switching off, e.g. remotely

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
JP2022056367A 2021-03-31 2022-03-30 無線周波数スイッチバイアシングトポロジー Active JP7724743B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163169053P 2021-03-31 2021-03-31
US63/169,053 2021-03-31

Publications (3)

Publication Number Publication Date
JP2022159156A JP2022159156A (ja) 2022-10-17
JP2022159156A5 JP2022159156A5 (enExample) 2025-03-13
JP7724743B2 true JP7724743B2 (ja) 2025-08-18

Family

ID=81449570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022056367A Active JP7724743B2 (ja) 2021-03-31 2022-03-30 無線周波数スイッチバイアシングトポロジー

Country Status (7)

Country Link
US (2) US11777499B2 (enExample)
JP (1) JP7724743B2 (enExample)
KR (1) KR20220136270A (enExample)
CN (1) CN115149935A (enExample)
DE (1) DE102022203190A1 (enExample)
GB (1) GB2607419B (enExample)
TW (1) TW202241062A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11901243B2 (en) 2013-11-12 2024-02-13 Skyworks Solutions, Inc. Methods related to radio-frequency switching devices having improved voltage handling capability
CN115580282A (zh) * 2022-10-31 2023-01-06 南京邮电大学 一种电感加载的超宽带半导体单刀双掷开关
CN116707503B (zh) * 2023-08-03 2023-12-01 中科海高(成都)电子技术有限公司 一种单刀双掷开关电路及工作方法、电子设备
US20250105861A1 (en) * 2023-09-22 2025-03-27 Northrop Grumman Systems Corporation Super-lattice castellated field effect transistor (slcfet) switch system

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266801A (ja) 2006-03-28 2007-10-11 New Japan Radio Co Ltd スイッチ回路
JP2008017031A (ja) 2006-07-04 2008-01-24 Matsushita Electric Ind Co Ltd スイッチ回路
US20080116751A1 (en) 2006-11-20 2008-05-22 Matsushita Electric Industrial Co., Ltd. Semiconductor switch circuit
JP2012080247A (ja) 2010-09-30 2012-04-19 Renesas Electronics Corp 半導体装置および携帯電話機
JP2014053853A (ja) 2012-09-10 2014-03-20 Renesas Electronics Corp 高周波切替モジュール及び高周波切替回路
US20150188600A1 (en) 2013-12-27 2015-07-02 Samsung Electro-Mechanics Co., Ltd. Switching circuit and rf switch including the same
US20180131369A1 (en) 2016-11-10 2018-05-10 Skyworks Solutions, Inc. Manifolded gate resistance network

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008011503A (ja) * 2006-05-31 2008-01-17 Matsushita Electric Ind Co Ltd 高周波スイッチ回路、高周波スイッチ装置、及び送信モジュール装置
JP5251953B2 (ja) * 2010-09-30 2013-07-31 株式会社村田製作所 スイッチ回路、半導体装置及び携帯無線機
US8933533B2 (en) * 2012-07-05 2015-01-13 Infineon Technologies Austria Ag Solid-state bidirectional switch having a first and a second power-FET
US9628075B2 (en) * 2012-07-07 2017-04-18 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266801A (ja) 2006-03-28 2007-10-11 New Japan Radio Co Ltd スイッチ回路
JP2008017031A (ja) 2006-07-04 2008-01-24 Matsushita Electric Ind Co Ltd スイッチ回路
US20080116751A1 (en) 2006-11-20 2008-05-22 Matsushita Electric Industrial Co., Ltd. Semiconductor switch circuit
JP2012080247A (ja) 2010-09-30 2012-04-19 Renesas Electronics Corp 半導体装置および携帯電話機
JP2014053853A (ja) 2012-09-10 2014-03-20 Renesas Electronics Corp 高周波切替モジュール及び高周波切替回路
US20150188600A1 (en) 2013-12-27 2015-07-02 Samsung Electro-Mechanics Co., Ltd. Switching circuit and rf switch including the same
US20180131369A1 (en) 2016-11-10 2018-05-10 Skyworks Solutions, Inc. Manifolded gate resistance network

Also Published As

Publication number Publication date
CN115149935A (zh) 2022-10-04
TW202241062A (zh) 2022-10-16
US20240048143A1 (en) 2024-02-08
KR20220136270A (ko) 2022-10-07
GB2607419B (en) 2024-05-01
DE102022203190A1 (de) 2022-10-06
GB2607419A (en) 2022-12-07
JP2022159156A (ja) 2022-10-17
GB202204530D0 (en) 2022-05-11
US12176893B2 (en) 2024-12-24
US20220321119A1 (en) 2022-10-06
US11777499B2 (en) 2023-10-03

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