KR20210103457A - 레이저 어닐 방법 및 박막 트랜지스터의 제조 방법 - Google Patents

레이저 어닐 방법 및 박막 트랜지스터의 제조 방법 Download PDF

Info

Publication number
KR20210103457A
KR20210103457A KR1020217008104A KR20217008104A KR20210103457A KR 20210103457 A KR20210103457 A KR 20210103457A KR 1020217008104 A KR1020217008104 A KR 1020217008104A KR 20217008104 A KR20217008104 A KR 20217008104A KR 20210103457 A KR20210103457 A KR 20210103457A
Authority
KR
South Korea
Prior art keywords
silicon film
region
laser
irradiation
laser beam
Prior art date
Application number
KR1020217008104A
Other languages
English (en)
Korean (ko)
Inventor
미치노부 미즈무라
Original Assignee
브이 테크놀로지 씨오. 엘티디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 브이 테크놀로지 씨오. 엘티디 filed Critical 브이 테크놀로지 씨오. 엘티디
Publication of KR20210103457A publication Critical patent/KR20210103457A/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
KR1020217008104A 2018-12-18 2019-12-03 레이저 어닐 방법 및 박막 트랜지스터의 제조 방법 KR20210103457A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018236398A JP2020098867A (ja) 2018-12-18 2018-12-18 レーザアニール方法および薄膜トランジスタの製造方法
JPJP-P-2018-236398 2018-12-18
PCT/JP2019/047135 WO2020129600A1 (ja) 2018-12-18 2019-12-03 レーザアニール方法および薄膜トランジスタの製造方法

Publications (1)

Publication Number Publication Date
KR20210103457A true KR20210103457A (ko) 2021-08-23

Family

ID=71101443

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217008104A KR20210103457A (ko) 2018-12-18 2019-12-03 레이저 어닐 방법 및 박막 트랜지스터의 제조 방법

Country Status (5)

Country Link
JP (1) JP2020098867A (ja)
KR (1) KR20210103457A (ja)
CN (1) CN113169050A (ja)
TW (1) TW202036679A (ja)
WO (1) WO2020129600A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113634900A (zh) * 2021-07-21 2021-11-12 上海理工大学 一种使用增材制造技术制备镍基合金定向双晶的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010283073A (ja) 2009-06-03 2010-12-16 V Technology Co Ltd レーザアニール方法及びレーザアニール装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276617A (ja) * 1988-04-27 1989-11-07 Seiko Epson Corp 半導体装置の製造方法
JP3942878B2 (ja) * 2001-11-28 2007-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3847172B2 (ja) * 2002-01-18 2006-11-15 住友重機械工業株式会社 結晶成長方法及びレーザアニール装置
JP2004342875A (ja) * 2003-05-16 2004-12-02 Fuji Photo Film Co Ltd レーザアニール装置
JP4092414B2 (ja) * 2004-11-29 2008-05-28 住友重機械工業株式会社 レーザアニール方法
KR101266273B1 (ko) * 2006-06-30 2013-05-22 엘지디스플레이 주식회사 액정표시소자의 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010283073A (ja) 2009-06-03 2010-12-16 V Technology Co Ltd レーザアニール方法及びレーザアニール装置

Also Published As

Publication number Publication date
TW202036679A (zh) 2020-10-01
JP2020098867A (ja) 2020-06-25
CN113169050A (zh) 2021-07-23
WO2020129600A1 (ja) 2020-06-25

Similar Documents

Publication Publication Date Title
EP1912252A1 (en) Polysilicon thin film transistor and method of fabricating the same
JP2008040192A (ja) 表示装置および表示装置の製造方法
JP5800292B2 (ja) レーザ処理装置
WO2020137399A1 (ja) レーザアニール方法およびレーザアニール装置
WO2020158464A1 (ja) レーザアニール方法およびレーザアニール装置
KR20210103457A (ko) 레이저 어닐 방법 및 박막 트랜지스터의 제조 방법
CN110998795A (zh) 激光照射装置、薄膜晶体管的制造方法及投影掩模
US7723167B2 (en) Process and system for laser annealing and laser-annealed semiconductor film
JP2006504262A (ja) 多結晶化方法、多結晶シリコン薄膜トランジスタの製造方法、及びそのためのレーザー照射装置
JP4769491B2 (ja) 結晶化方法、薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置
WO2020129562A1 (ja) レーザアニール装置
WO2020129601A1 (ja) レーザアニール方法およびレーザアニール装置
JP2007208174A (ja) レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP7161758B2 (ja) レーザアニール装置
JPH11243057A (ja) 半導体装置の製造方法および半導体装置の製造装置
JP4763983B2 (ja) 光変調素子、結晶化装置、結晶化方法、薄膜半導体基板の製造装置、薄膜半導体基板の製造方法、薄膜半導体装置、薄膜半導体装置の製造方法、表示装置及び位相シフタ
US20200168642A1 (en) Laser irradiation device, projection mask, laser irradiation method, and program
JP7203417B2 (ja) レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
JP2005276996A (ja) 平面表示装置の製造方法
WO2019107108A1 (ja) レーザ照射装置、レーザ照射方法及び投影マスク
JP2008071788A (ja) レーザアニール装置、半導体膜基板、素子基板、及び電気光学装置
JP2006054223A (ja) 半導体薄膜の結晶化方法、結晶化された半導体薄膜を有する基板、そして半導体薄膜の結晶化装置
WO2019111362A1 (ja) レーザ照射装置、レーザ照射方法、および、投影マスク
JP2007134501A (ja) エキシマレーザーアニール法で作製したＳｉ膜を用いた半導体トランジスタ製造方法
CN111033693A (zh) 激光照射装置、薄膜晶体管的制造方法、程序及投影掩模