KR20210005595A - 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법 그리고 패턴 형성 방법 - Google Patents
레지스트 하층막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법 그리고 패턴 형성 방법 Download PDFInfo
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- KR20210005595A KR20210005595A KR1020207030072A KR20207030072A KR20210005595A KR 20210005595 A KR20210005595 A KR 20210005595A KR 1020207030072 A KR1020207030072 A KR 1020207030072A KR 20207030072 A KR20207030072 A KR 20207030072A KR 20210005595 A KR20210005595 A KR 20210005595A
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- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
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- 150000002596 lactones Chemical class 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
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- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
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- 229940057867 methyl lactate Drugs 0.000 description 1
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- 239000000178 monomer Substances 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- PFPYHYZFFJJQFD-UHFFFAOYSA-N oxalic anhydride Chemical compound O=C1OC1=O PFPYHYZFFJJQFD-UHFFFAOYSA-N 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
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- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 1
- GPRIERYVMZVKTC-UHFFFAOYSA-N p-quaterphenyl Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 GPRIERYVMZVKTC-UHFFFAOYSA-N 0.000 description 1
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
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- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 150000003254 radicals Chemical class 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 125000005579 tetracene group Chemical group 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- ULAQISQDFQAUCH-UHFFFAOYSA-N trifluoromethanesulfonic acid hydroiodide Chemical compound I.OS(=O)(=O)C(F)(F)F ULAQISQDFQAUCH-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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| JPJP-P-2018-082615 | 2018-04-23 | ||
| PCT/JP2019/015534 WO2019208212A1 (ja) | 2018-04-23 | 2019-04-10 | レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターン形成方法 |
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| KR20210005595A true KR20210005595A (ko) | 2021-01-14 |
| KR102697600B1 KR102697600B1 (ko) | 2024-08-23 |
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| KR (1) | KR102697600B1 (ja) |
| WO (1) | WO2019208212A1 (ja) |
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| KR20220063170A (ko) * | 2019-09-17 | 2022-05-17 | 제이에스알 가부시끼가이샤 | 조성물, 레지스트 하층막, 레지스트 하층막의 형성 방법, 패터닝된 기판의 제조 방법 및 화합물 |
| CN117980823A (zh) * | 2021-09-24 | 2024-05-03 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物 |
| WO2023112672A1 (ja) * | 2021-12-15 | 2023-06-22 | Jsr株式会社 | 半導体基板の製造方法及び組成物 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004177668A (ja) | 2002-11-27 | 2004-06-24 | Tokyo Ohka Kogyo Co Ltd | 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
| WO2016021511A1 (ja) * | 2014-08-08 | 2016-02-11 | 三菱瓦斯化学株式会社 | リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法 |
| JP2016044272A (ja) * | 2014-08-25 | 2016-04-04 | Jsr株式会社 | 膜形成用組成物、膜、パターンが形成された基板の製造方法及び化合物 |
| WO2016163457A1 (ja) * | 2015-04-07 | 2016-10-13 | 三菱瓦斯化学株式会社 | リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法 |
| KR20160136316A (ko) * | 2014-03-24 | 2016-11-29 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법, 수지 및 레지스트 하층막 형성 조성물 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03279957A (ja) * | 1990-03-28 | 1991-12-11 | Fuji Photo Film Co Ltd | ポジ型フオトレジスト組成物 |
| JP4748055B2 (ja) * | 2006-12-27 | 2011-08-17 | Ｊｓｒ株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
| WO2014208324A1 (ja) * | 2013-06-24 | 2014-12-31 | Jsr株式会社 | 膜形成用組成物、レジスト下層膜及びその形成方法、パターン形成方法並びに化合物 |
| KR20170008735A (ko) | 2014-05-08 | 2017-01-24 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 막, 패턴 형성방법 및 정제방법 |
| JP2018100249A (ja) * | 2016-12-21 | 2018-06-28 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ | 新規化合物、半導体材料、およびこれを用いた膜および半導体の製造方法 |
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| JP2004177668A (ja) | 2002-11-27 | 2004-06-24 | Tokyo Ohka Kogyo Co Ltd | 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
| KR20160136316A (ko) * | 2014-03-24 | 2016-11-29 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법, 수지 및 레지스트 하층막 형성 조성물 |
| WO2016021511A1 (ja) * | 2014-08-08 | 2016-02-11 | 三菱瓦斯化学株式会社 | リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法 |
| JP2016044272A (ja) * | 2014-08-25 | 2016-04-04 | Jsr株式会社 | 膜形成用組成物、膜、パターンが形成された基板の製造方法及び化合物 |
| WO2016163457A1 (ja) * | 2015-04-07 | 2016-10-13 | 三菱瓦斯化学株式会社 | リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法 |
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| JPWO2019208212A1 (ja) | 2021-05-20 |
| WO2019208212A1 (ja) | 2019-10-31 |
| KR102697600B1 (ko) | 2024-08-23 |
| JP7255589B2 (ja) | 2023-04-11 |
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