KR20200144182A - 매립 게이트 구조를 구비한 반도체 장치 및 그 제조 방법 - Google Patents

매립 게이트 구조를 구비한 반도체 장치 및 그 제조 방법 Download PDF

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KR20200144182A
KR20200144182A KR1020190071564A KR20190071564A KR20200144182A KR 20200144182 A KR20200144182 A KR 20200144182A KR 1020190071564 A KR1020190071564 A KR 1020190071564A KR 20190071564 A KR20190071564 A KR 20190071564A KR 20200144182 A KR20200144182 A KR 20200144182A
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gate
diffused
insulating layer
dipole
silicon oxide
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KR1020190071564A
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English (en)
Korean (ko)
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KR102704119B1 (ko
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김동수
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에스케이하이닉스 주식회사
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Priority to KR1020190071564A priority Critical patent/KR102704119B1/ko
Priority to US16/691,335 priority patent/US11183579B2/en
Priority to CN201911239968.9A priority patent/CN112103341B/zh
Publication of KR20200144182A publication Critical patent/KR20200144182A/ko
Priority to US17/516,395 priority patent/US11935939B2/en
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Publication of KR102704119B1 publication Critical patent/KR102704119B1/ko

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US16/691,335 US11183579B2 (en) 2019-06-17 2019-11-21 Semiconductor device having buried gate structure and method for fabricating the same
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102457515B1 (ko) * 2018-02-22 2022-10-21 에스케이하이닉스 주식회사 매립게이트구조를 구비한 반도체장치 및 그 제조 방법
KR20210003997A (ko) * 2019-07-02 2021-01-13 삼성전자주식회사 반도체 소자 및 그의 제조방법
US11018256B2 (en) * 2019-08-23 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Selective internal gate structure for ferroelectric semiconductor devices
US11784052B2 (en) * 2020-05-28 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Dipole-engineered high-k gate dielectric and method forming same
DE102020130401A1 (de) 2020-05-28 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Dipolig-gefertigtes high-k-gate-dielektrikum und verfahren zu dessen bildung desselben
CN113990800A (zh) * 2020-07-27 2022-01-28 长鑫存储技术有限公司 半导体器件的制备方法及半导体器件
US11424360B1 (en) * 2021-02-04 2022-08-23 Nanya Technology Corporation Semiconductor device and method for manufacturing the same
CN113053825B (zh) * 2021-03-09 2022-03-01 长鑫存储技术有限公司 半导体结构的形成方法及半导体结构
US12089400B2 (en) 2021-03-09 2024-09-10 Changxin Memory Technologies, Inc. Method for forming semiconductor structures and semiconductor structure
CN113314535B (zh) * 2021-05-19 2023-12-29 福建省晋华集成电路有限公司 半导体器件及其形成方法
US11937420B2 (en) * 2022-01-19 2024-03-19 Nanya Technology Corporation Memory device having word line with improved adhesion between work function member and conductive layer
US11895820B2 (en) 2022-01-19 2024-02-06 Nanya Technology Corporation Method of manufacturing memory device having word line with improved adhesion between work function member and conductive layer
US20230299161A1 (en) * 2022-03-21 2023-09-21 Nanya Technology Corporation Semiconductor device having word line structure
CN116960176A (zh) * 2022-04-15 2023-10-27 华为技术有限公司 晶体管及其制备方法、半导体器件及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130110599A (ko) * 2012-03-29 2013-10-10 삼성전자주식회사 트랜지스터, 반도체 소자 및 이를 포함하는 반도체 모듈
KR20160034494A (ko) * 2014-09-19 2016-03-30 삼성전자주식회사 반도체 장치 및 이의 제조 방법
KR20160126147A (ko) * 2015-04-22 2016-11-02 에스케이하이닉스 주식회사 매립금속게이트구조를 구비한 반도체장치 및 그 제조 방법, 그를 구비한 메모리셀, 그를 구비한 전자장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102162733B1 (ko) * 2014-05-29 2020-10-07 에스케이하이닉스 주식회사 듀얼일함수 매립게이트형 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치
KR102250583B1 (ko) * 2014-12-16 2021-05-12 에스케이하이닉스 주식회사 듀얼일함수 게이트구조를 구비한 반도체장치 및 그 제조 방법, 그를 구비한 메모리셀, 그를 구비한 전자장치
KR102381342B1 (ko) 2015-09-18 2022-03-31 삼성전자주식회사 게이트를 갖는 반도체 소자의 형성 방법
KR102396085B1 (ko) * 2015-10-28 2022-05-12 에스케이하이닉스 주식회사 매립금속게이트구조를 구비한 반도체장치 및 그 제조 방법, 그를 구비한 메모리셀, 그를 구비한 전자장치
KR102410919B1 (ko) * 2015-10-29 2022-06-21 에스케이하이닉스 주식회사 매립게이트구조를 구비한 반도체구조물 및 그 제조 방법, 그를 구비한 메모리셀
KR102455869B1 (ko) * 2015-12-23 2022-10-20 에스케이하이닉스 주식회사 매립게이트구조를 구비한 반도체장치 및 그 제조 방법, 그를 구비한 메모리셀
KR102399497B1 (ko) * 2017-05-29 2022-05-19 에스케이하이닉스 주식회사 매립게이트구조를 구비한 반도체장치 및 그 제조 방법
KR102457515B1 (ko) * 2018-02-22 2022-10-21 에스케이하이닉스 주식회사 매립게이트구조를 구비한 반도체장치 및 그 제조 방법
KR102671273B1 (ko) * 2019-06-17 2024-06-04 에스케이하이닉스 주식회사 매립 게이트 구조를 구비한 반도체 장치 및 그 제조 방법
US11211466B2 (en) * 2019-09-02 2021-12-28 SK Hynix Inc. Semiconductor device having an air gap and method for fabricating the same
US11328988B2 (en) * 2019-12-27 2022-05-10 Intel Corporation Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130110599A (ko) * 2012-03-29 2013-10-10 삼성전자주식회사 트랜지스터, 반도체 소자 및 이를 포함하는 반도체 모듈
KR20160034494A (ko) * 2014-09-19 2016-03-30 삼성전자주식회사 반도체 장치 및 이의 제조 방법
KR20160126147A (ko) * 2015-04-22 2016-11-02 에스케이하이닉스 주식회사 매립금속게이트구조를 구비한 반도체장치 및 그 제조 방법, 그를 구비한 메모리셀, 그를 구비한 전자장치
US20180308850A1 (en) * 2015-04-22 2018-10-25 SK Hynix Inc. Semiconductor device having buried gate structure and method for manufacturing the same, memory cell having the same and electronic device having the same

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AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant