KR20200125397A - 얼라인먼트 장치, 성막 장치, 얼라인먼트 방법, 성막 방법 및 전자 디바이스의 제조 방법 - Google Patents
얼라인먼트 장치, 성막 장치, 얼라인먼트 방법, 성막 방법 및 전자 디바이스의 제조 방법 Download PDFInfo
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- KR20200125397A KR20200125397A KR1020190163765A KR20190163765A KR20200125397A KR 20200125397 A KR20200125397 A KR 20200125397A KR 1020190163765 A KR1020190163765 A KR 1020190163765A KR 20190163765 A KR20190163765 A KR 20190163765A KR 20200125397 A KR20200125397 A KR 20200125397A
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- 238000000034 method Methods 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 230000015572 biosynthetic process Effects 0.000 title description 39
- 239000000758 substrate Substances 0.000 claims abstract description 331
- 238000007740 vapor deposition Methods 0.000 claims description 18
- 238000003384 imaging method Methods 0.000 claims description 16
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 13
- 238000003860 storage Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 description 80
- 238000012546 transfer Methods 0.000 description 28
- 238000012545 processing Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 238000012634 optical imaging Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
-
- H01L51/0011—
-
- H01L51/56—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2019-086391 | 2019-04-26 | ||
JP2019086391A JP7290988B2 (ja) | 2019-04-26 | 2019-04-26 | アライメント装置、成膜装置、アライメント方法、成膜方法および電子デバイスの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20200125397A true KR20200125397A (ko) | 2020-11-04 |
Family
ID=72970887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020190163765A KR20200125397A (ko) | 2019-04-26 | 2019-12-10 | 얼라인먼트 장치, 성막 장치, 얼라인먼트 방법, 성막 방법 및 전자 디바이스의 제조 방법 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7290988B2 (zh) |
KR (1) | KR20200125397A (zh) |
CN (1) | CN111850461A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102257055B1 (ko) * | 2020-11-30 | 2021-05-28 | 이재준 | 스마트 비전 얼라인먼트 시스템 및 이를 이용한 스마트 비전 얼라인먼트 방법 |
KR102520647B1 (ko) * | 2021-11-30 | 2023-04-11 | 이재준 | 자가진단 및 보정 기능을 가지는 비전 얼라인먼트 시스템 및 이를 이용한 비전 얼라인먼트 방법 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7337108B2 (ja) * | 2021-01-28 | 2023-09-01 | キヤノントッキ株式会社 | アライメント装置、成膜装置および調整方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006176809A (ja) | 2004-12-21 | 2006-07-06 | Ulvac Japan Ltd | 基板とマスクのアライメント方法および有機薄膜蒸着方法ならびにアライメント装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001308003A (ja) * | 2000-02-15 | 2001-11-02 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
JP2004303559A (ja) | 2003-03-31 | 2004-10-28 | Tohoku Pioneer Corp | アライメント装置及び方法、並びにこれを用いて製造される有機el素子 |
JP4592021B2 (ja) | 2006-06-29 | 2010-12-01 | トッキ株式会社 | アライメント装置及び方法 |
JP4799325B2 (ja) * | 2006-09-05 | 2011-10-26 | 東京エレクトロン株式会社 | 基板受け渡し装置,基板処理装置,基板受け渡し方法 |
JP2010186863A (ja) * | 2009-02-12 | 2010-08-26 | Disco Abrasive Syst Ltd | 位置合わせ機構、加工装置および位置合わせ方法 |
JP5449239B2 (ja) * | 2010-05-12 | 2014-03-19 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及びプログラムを記録した記憶媒体 |
WO2012173692A1 (en) | 2011-06-17 | 2012-12-20 | Applied Materials, Inc. | Cvd mask alignment for oled processing |
CN103792792B (zh) * | 2012-10-31 | 2016-08-24 | 上海微电子装备有限公司 | 一种提高光刻机工件台定位精度的方法 |
TW201830573A (zh) | 2016-12-12 | 2018-08-16 | 美商應用材料股份有限公司 | 基板處理設備及使用基板處理設備的方法 |
JP6763321B2 (ja) * | 2017-03-01 | 2020-09-30 | 東京エレクトロン株式会社 | 自転検出用冶具、基板処理装置及び基板処理装置の運転方法 |
JP6461235B2 (ja) * | 2017-05-22 | 2019-01-30 | キヤノントッキ株式会社 | 基板載置装置、成膜装置、基板載置方法、成膜方法、および電子デバイスの製造方法 |
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2019
- 2019-04-26 JP JP2019086391A patent/JP7290988B2/ja active Active
- 2019-12-10 KR KR1020190163765A patent/KR20200125397A/ko not_active Application Discontinuation
- 2019-12-17 CN CN201911297334.9A patent/CN111850461A/zh active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006176809A (ja) | 2004-12-21 | 2006-07-06 | Ulvac Japan Ltd | 基板とマスクのアライメント方法および有機薄膜蒸着方法ならびにアライメント装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102257055B1 (ko) * | 2020-11-30 | 2021-05-28 | 이재준 | 스마트 비전 얼라인먼트 시스템 및 이를 이용한 스마트 비전 얼라인먼트 방법 |
WO2022114340A1 (ko) * | 2020-11-30 | 2022-06-02 | 이재준 | 스마트 비전 얼라인먼트 시스템 및 이를 이용한 스마트 비전 얼라인먼트 방법 |
KR102520647B1 (ko) * | 2021-11-30 | 2023-04-11 | 이재준 | 자가진단 및 보정 기능을 가지는 비전 얼라인먼트 시스템 및 이를 이용한 비전 얼라인먼트 방법 |
Also Published As
Publication number | Publication date |
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JP7290988B2 (ja) | 2023-06-14 |
CN111850461A (zh) | 2020-10-30 |
JP2020183546A (ja) | 2020-11-12 |
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