KR20200063559A - Tiling display apparatus - Google Patents

Abstract

According to an embodiment of the present specification, a tiling display device comprises: a substrate including a display area and a bezel area which is a non-display area surrounding the outer edge of the display area; a thin film transistor and a light emitting device disposed on the display area of the substrate; a polarizing plate disposed on the display area of the substrate; a first black matrix disposed on the bezel area of the substrate; a back plate disposed under the substrate; and a plurality of display devices each having a bending jig disposed under the back plate and having an end disposed in one area of the bezel area. The substrate and the back plate of the bezel area are bent in contact with the bending jig, and in the plurality of display devices, the bezel areas bent on the same plane are disposed adjacent to each other.

Description

Tiling display device and manufacturing method thereof{TILING DISPLAY APPARATUS}

This specification relates to a tiling display device and a manufacturing method thereof.

As the era of full-fledged informatization begins, the field of display devices that visually display electrical information signals is rapidly developing, and representative display devices include liquid crystal display apparatus (LCD) and field emission display apparatus. FED), an electro-wetting display apparatus (EWD), and an organic light emitting display apparatus (OLED).

The electroluminescent display device including the organic light emitting display device is a self-emissive display device, and unlike a liquid crystal display device, a separate light source is not required, so that it can be manufactured in a lightweight and thin form, and is advantageous in terms of power consumption by driving a low voltage. In addition, it has excellent color realization, response speed, viewing angle, and contrast ratio (CR).

In an electroluminescent display device, an emissive layer (EML) using an organic material is disposed between two electrodes made of an anode and a cathode. When holes are injected from the anode into the light emitting layer and electrons from the cathode are injected into the light emitting layer, the injected electrons and holes recombine with each other to form excitons in the light emitting layer and emit light.

The light-emitting layer includes a host material and a dopant material, and interaction occurs between the two materials. The host generates excitons from electrons and holes to transfer energy to the dopant, and the dopant is a dye-based organic substance added in a small amount and receives energy from the host to convert it into light.

Recently, as the utilization range of the display device increases, the demand for the large-area display device has also increased significantly, but manufacturing of the large-area display device using the display substrate using one base substrate is limited due to limitations of the display device technology.

As an alternative to this, a method of realizing a large-area display device by combining a plurality of display devices without increasing the area of the display device has been proposed. For example, two or more display devices are arranged side by side on the same plane, and large display devices are implemented by fixing display devices adjacent to each other. The name of such a large area display device is a tiling display device.

A tiling display device that combines a plurality of display devices adjacent to each other in parallel on a plane has a seam between adjacent display devices. In this way, the seam area of the tiling display device is formed by arranging adjacent bezel areas, which are non-display areas in which images of each of the plurality of display devices are not implemented.

The larger the seam area formed by the bezel area of each display device is, the more troublesome it is to perceive the user watching the image, causing a problem that the natural image cannot be displayed, minimizing the seam area so that the user does not see it, and the tiling display device is one. It is very important to be recognized as the screen.

The inventors of the present specification have recognized the above-mentioned problems and developed a display device in which the seam area of the tiling display device is minimized, so that the tiling display device is recognized by the user as one screen.

The tasks of the present specification are not limited to the above-mentioned tasks, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

A tiled display device according to an exemplary embodiment of the present specification includes a substrate including a display area and a bezel area that is a non-display area surrounding an outer edge of the display area, a thin film transistor and a light emitting device disposed on the display area of the substrate, and a display of the substrate It includes a polarizing plate disposed on the region, a first black matrix disposed on the bezel region of the substrate, a back plate disposed under the substrate, and a bending jig disposed below the back plate and having an end disposed in one region of the bezel region And a plurality of display devices, the substrate and the back plate of the bezel area are bent in contact with a bending jig, and the bezel areas bent on the same plane are disposed adjacent to each other.

A tiling display device according to an exemplary embodiment of the present disclosure includes preparing a plurality of display devices including a display area and a bezel area that is a non-display area surrounding an outer periphery of the display area. A step of arranging on a stage and removing a stage such that bezel regions bent on a plane are adjacent to each other, and preparing a plurality of display devices include: a display region and a non-display region surrounding the outer periphery of the display region Forming a substrate including an in-bezel area, disposing a thin film transistor and a light emitting device on the display area, disposing a panel black matrix on the bezel area, placing a polarizing plate on the display area, and under the substrate Disposing a back plate on the back plate, placing a bending jig on which an end of one area of the bezel area is disposed under the back plate, and bending a substrate of the bezel area and one area of the back plate on the end of the bending jig. Including.

The tiling display device according to an exemplary embodiment of the present specification has an effect of minimizing the bezel area of the display device so that the seam area of the large area tiling display device is not recognized by the user and is recognized as one screen.

The effects according to the embodiments of the present specification are not limited by the contents exemplified above, and more various effects are included in the present specification.

Since the contents of the specification described in the above-mentioned subject, problem solving means, and effects do not specify essential features of the claims, the scope of the claims is not limited by the contents described in the specification.

1 is a block diagram of a display device included in a tiling display device according to an exemplary embodiment of the present specification.
2 is a pixel circuit diagram of a display device included in a tiling display device according to an exemplary embodiment of the present specification.
3 is a plan view of a display panel of a display device included in a tiling display device according to an exemplary embodiment of the present specification.
4 is a cross-sectional view of a display panel of a display device included in a tiling display device according to an exemplary embodiment of the present specification.
5 is a perspective view of a tiling display device according to an exemplary embodiment of the present specification.
6A to 6E are cross-sectional views of a manufacturing process of a tiling display device according to an exemplary embodiment of the present specification.

Advantages and features of the present invention, and methods for achieving them will be clarified with reference to embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the embodiments allow the disclosure of the present invention to be complete, and the ordinary knowledge in the technical field to which the present invention pertains. It is provided to fully inform the holder of the scope of the invention, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for describing the embodiments of the present invention are exemplary and the present invention is not limited to the illustrated matters. The same reference numerals refer to the same components throughout the specification. In addition, in the description of the present invention, when it is determined that detailed descriptions of related known technologies may unnecessarily obscure the subject matter of the present invention, detailed descriptions thereof will be omitted. When'include','have','consist of', etc. mentioned in this specification are used, other parts may be added unless'~man' is used. When a component is expressed as a singular number, the plural number is included unless otherwise specified.

In interpreting the components, it is interpreted as including the error range even if there is no explicit description.

In the case of the description of the positional relationship, for example, when the positional relationship of two parts is described as'~top','~upper','~bottom','~side', etc. Alternatively, one or more other parts may be located between the two parts unless'direct' is used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another component. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

Each of the features of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving is possible, and each of the embodiments may be independently performed with respect to each other or may be implemented together in an association relationship. It might be.

1 is a block diagram of a display device included in a tiling display device according to an exemplary embodiment of the present specification.

The display device included in the tiling display device of FIG. 1 describes an electroluminescent display device as an example, but is not limited thereto, and various display devices such as a liquid crystal display device are applicable.

Referring to FIG. 1, the electroluminescent display device 100 included in the tiling display device includes an image processing unit 110, a timing controller 120, a data driving unit 130, a gate driving unit 140 and a display panel 150. Includes.

The image processing unit 110 outputs a data enable signal DE and the like as well as a data signal DATA supplied from the outside. The image processing unit 110 may output one or more of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal in addition to the data enable signal DE.

The timing controller 120 receives a data signal DATA along with a driving signal including a data enable signal DE or a vertical synchronization signal, a horizontal synchronization signal, and a clock signal from the image processing unit 110, and the data driving unit 130 ). The timing controller 120 includes a gate timing control signal GDC for controlling the operation timing of the gate driver 140 based on the driving signal and a data timing control signal DDC for controlling the operation timing of the data driver 130. Output

The data driver 130 samples and latches the data signal DATA supplied from the timing controller 120 in response to the data timing control signal DDC supplied from the timing controller 120, converts it to a gamma reference voltage, and outputs it. . The data driver 130 outputs the data signal DATA through the data lines DL1 to DLn.

The gate driver 140 outputs a gate signal while shifting the level of the gate voltage in response to the gate timing control signal GDC supplied from the timing controller 120. The gate driver 140 outputs a gate signal through the gate lines GL1 to GLm.

The display panel 150 displays an image while the pixel 160 emits light corresponding to the data signal DATA and the gate signal supplied from the data driver 130 and the gate driver 140. The detailed structure of the pixel 160 will be described with reference to FIGS. 2 and 3.

2 is a pixel circuit diagram of a display device included in a tiling display device according to an exemplary embodiment of the present specification.

The display device included in the tiling display device of FIG. 2 describes an electroluminescent display device as an example, but is not limited thereto, and various display devices such as a liquid crystal display device are applicable.

Referring to FIG. 2, a pixel 200 of an electroluminescent display device included in a tiling display device includes a switching transistor 240, a driving transistor 250, a compensation circuit 260, and a light emitting device 270.

The light emitting element 270 operates to emit light according to the driving current formed by the driving transistor 250.

The switching transistor 240 is a switching operation such that the data signal supplied through the data line 230 is stored as a data voltage in a capacitor of the compensation circuit 260 in response to the gate signal supplied through the gate line 220. do.

The driving transistor 250 operates such that a constant driving current flows between the high potential power line VDD and the low potential power line GND in response to the data voltage stored in the capacitor.

The compensation circuit 260 is a circuit for compensating the threshold voltage of the driving transistor 250, and the compensation circuit 260 includes one or more thin film transistors and capacitors. The composition of the compensation circuit can vary greatly depending on the compensation method.

In addition, the pixel of the electroluminescent display device 200 is composed of a 2T (Transistor) 1C (Capacitor) structure including a switching transistor 240, a driving transistor 250, a capacitor, and a light emitting element 270, and a compensation circuit ( When 260) is added, it can be variously formed into 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, and 7T2C.

3 is a plan view of a display panel of a display device included in a tiling display device according to an exemplary embodiment of the present specification.

The display device included in the tiling display device of FIG. 3 describes an electroluminescent display device as an example, but is not limited thereto, and various display devices such as a liquid crystal display device are applicable.

Referring to FIG. 3, the substrate 310 included in the display panel 300 includes an active area (A/A) and a display area (A) in which pixels that actually emit light through thin film transistors and light emitting elements are disposed. /A) includes a non-active area (N/A) surrounding the outer periphery.

In the non-display area (N/A) of the substrate 310, various circuits such as a gate line 390 for driving the electroluminescent display panel 300 and a scan line (S/L), which is a gate line, etc. Signal wiring can be arranged. In addition, the circuit for driving the electroluminescent display panel 300 is disposed on a substrate 310 by a GIP (Gate in Panel) method, or a substrate 310 by a Tape Carrier Package (TCP) or a Chip on Film (COF) method. ).

A pad 395 is disposed on one side of the non-display area N/A of the substrate 310. The pad 395 is a metal pattern to which an external module is bonded.

The non-display area (N/A) of the substrate 310 is a region in which wiring and a driving circuit for driving a screen are disposed, and is not an area where an image is displayed, and thus is an area that is not visible on the upper surface of the substrate 310. Accordingly, by bending a portion of the non-display area (N/A) of the substrate 310, the area for wiring and driving circuits can be secured while the bezel area can be minimized.

Various wirings are formed on the substrate 310. The wiring may be disposed in the display area (A/A) of the substrate 310 and may also be disposed in the non-display area (N/A). In particular, the circuit wiring 370 formed in the non-display area N/A may be connected to a driving circuit, for example, a gate driver or a data driver, to transmit a signal.

Circuit wiring 370 is formed of a conductive material, molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and silver (Ag) and magnesium ( Mg) may be composed of an alloy or a multi-layered structure, or may be composed of a three-layered structure of titanium (Ti)/aluminum (Al)/titanium (Ti), but is not limited thereto.

4 is a cross-sectional view of a display panel of a display device included in a tiling display device according to an exemplary embodiment of the present specification.

The display device included in the tiling display device of FIG. 4 describes an electroluminescent display device as an example, but is not limited thereto, and various display devices such as a liquid crystal display device are applicable.

Referring to FIG. 4, the substrate 410 serves to support and protect components included in the display panel 400 disposed thereon, and is conventionally made of a hard material such as glass or metal. Flexible substrates to which flexible materials having properties are applied are also applied. The flexible substrate may be configured in a film form including one of the group consisting of polyester-based polymers, silicone-based polymers, acrylic polymers, polyolefin-based polymers, and copolymers thereof, but is not limited thereto.

A buffer layer may be further disposed on the substrate 410. The buffer layer prevents the penetration of moisture or other impurities through the substrate 410 and can planarize the surface of the substrate 410. The buffer layer is not a necessary configuration, and may be deleted depending on the type of the substrate 410 or the type of the thin film transistor 420 disposed on the substrate 410.

The thin film transistor 420 disposed on the substrate 410 includes a gate electrode 422, a source electrode 424, a drain electrode 426 and a semiconductor layer 428.

The semiconductor layer 428 has superior mobility than amorphous silicon or amorphous silicon, and thus has low energy consumption and excellent reliability, and can be applied to driving thin film transistors within pixels. ), but is not limited thereto.

In addition, the semiconductor layer 428 may be formed of an oxide semiconductor. The oxide semiconductor has excellent mobility and uniformity. The oxide semiconductor is, for example, an indium tin gallium zinc oxide (InSnGaZnO)-based material that is a quaternary metal oxide, an indium gallium zinc oxide (InGaZnO)-based material that is a ternary metal oxide, an indium tin zinc oxide (InSnZnO)-based material, indium Aluminum zinc oxide (InAlZnO) based material, tin gallium zinc oxide (SnGaZnO) based material, aluminum gallium zinc oxide (AlGaZnO) based material, tin aluminum zinc oxide (SnAlZnO) based material, indium zinc oxide (InZnO) which is a binary metal oxide Based material, tin zinc oxide (SnZnO) based material, aluminum zinc oxide (AlZnO) based material, zinc magnesium oxide (ZnMgO) based material, tin magnesium oxide (SnMgO) based material, indium magnesium oxide (InMgO) based material, indium gallium A semiconductor layer 428 may be formed of an oxide (InGaO)-based material, an indium oxide (InO)-based material, a tin oxide (SnO)-based material, a zinc oxide (ZnO)-based material, etc., and the composition ratio of each element is It is not limited.

The semiconductor layer 428 may include a source region including a p-type or n-type impurity, a drain region, and a channel between the source region and the drain region. A low concentration doping region may be included between adjacent source regions and drain regions.

The source region and the drain region are regions doped with impurities at a high concentration, and are regions where the source electrode 424 and the drain electrode 426 of the thin film transistor 420 are respectively connected. The impurity ion may be a p-type impurity or an n-type impurity, and the p-type impurity may be, for example, one of boron (B), aluminum (Al), gallium (Ga), and indium (In), and n The type impurity may be, for example, phosphorus (P), arsenic (As), antimony (Sb), or the like.

The semiconductor layer 428 may be doped with an n-type impurity or a p-type impurity according to the NMOS or PMOS thin film transistor structure, and the thin film transistor included in the electroluminescent display device according to the exemplary embodiment of the present specification is NMOS Alternatively, a thin film transistor of PMOS is applicable.

The first insulating layer 431 is an insulating layer composed of a single layer of silicon oxide (SiOx) or silicon nitride (SiNx) or multiple layers thereof, and a current flowing through the semiconductor layer 428 flows to the gate electrode 422 So as not to. In addition, silicon oxide is less ductile than metal, but is superior in ductility to silicon nitride, and may be formed in a single layer or multiple layers depending on its characteristics.

The gate electrode 422 serves as a switch to turn-on or turn-off the thin film transistor 420 based on an electrical signal transmitted externally through the gate line, for example For example, conductive metals such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd), or alloys thereof It may be composed of a single layer or multiple layers, but is not limited thereto.

The source electrode 424 and the drain electrode 426 are connected to the data line and allow an electric signal transmitted from the outside to be transferred from the thin film transistor 420 to the light emitting device 440. The source electrode 424 and the drain electrode 426 are, for example, conductive metals such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), Metallic materials such as nickel (Ni) and neodymium (Nd) or alloys thereof may be composed of a single layer or multiple layers, but are not limited thereto.

In order to insulate the gate electrode 422 and the source electrode 424 and the drain electrode 426 from each other, the second insulating layer 433 composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx) is gated. It can be disposed between the electrode 422 and the source electrode 424 and the drain electrode 426.

A passivation layer made of an inorganic insulating layer such as silicon oxide (SiOx) or silicon nitride (SiNx) may be further disposed on the thin film transistor 420. The passivation layer may serve to prevent unnecessary electrical connections between components above and below the passivation layer and to prevent contamination or damage from the outside, the structure of the thin film transistor 420 and the light emitting element 440, and It may be omitted depending on the characteristics.

The thin film transistor 420 may be classified into an inverted staggered structure and a coplanar structure according to positions of components constituting the thin film transistor 420. In the inverted staggered structure, the thin film transistor has a gate electrode positioned on the opposite side of the source electrode and the drain electrode with respect to the semiconductor layer. In the coplanar structured thin film transistor 420, the gate electrode 422 is positioned on the same side as the source electrode 424 and the drain electrode 426 based on the semiconductor layer 428, as shown in FIG. 4.

In FIG. 4, a coplanar structured thin film transistor 420 is illustrated, but is not limited thereto, and may include an inverted staggered structured thin film transistor.

For convenience of description, FIG. 4 shows only the driving thin film transistor among the various thin film transistors, and may include a switching thin film transistor, a capacitor, and the like. In addition, when a signal is applied from the gate line, the switching thin film transistor transfers the signal from the data line to the gate electrode of the driving thin film transistor. The driving thin film transistor transfers the current transmitted through the power supply line to the anode 442 by the signal received from the switching thin film transistor, and controls light emission by the current delivered to the anode 442.

The thin film transistor 420 is protected and the step difference caused by the thin film transistor 420 is alleviated, and parasitic capacitance generated between the thin film transistor 420, the gate line and the data line, and the light emitting elements 440 is parasitic- The planarization layers 435 and 437 are disposed on the thin film transistor 420 to reduce capacitance.

The planarization layers 435 and 437 are, for example, acrylic resin, epoxy resin, phenol resin, polyamides resin, and polyimide resin. ), unsaturated polyester resins (Unsaturated Polyesters Resin), polyphenylene resins (Polyphenylene Resin), polyphenylene sulfide resins (Polyphenylenesulfides Resin), and may be formed of one or more materials of benzocyclobutene (Benzocyclobutene), However, the present invention is not limited thereto, and may include a first planarization layer 435 and a second planarization layer 437, which are sequentially stacked plurality of planarization layers 435 and 437.

For example, the first planarization layer 435 may be disposed on the thin film transistor 420, and the second planarization layer 437 may be disposed on the first planarization layer 435.

Also, a buffer layer may be disposed on the first planarization layer 435. The buffer layer may be disposed to protect components disposed on the first planarization layer 435, for example, a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or silicon nitride (SiNx) or silicon It may be composed of multiple layers of oxide (SiOx), and may be omitted depending on the configuration and characteristics of the thin film transistor 420 and the light emitting device 440.

The intermediate electrode 430 is disposed through a contact hole formed in the first planarization layer 435, and the intermediate electrode 430 is electrically connected to the thin film transistor 420.

A passivation layer made of an inorganic insulating layer such as silicon oxide (SiOx) and silicon nitride (SiNx) may be further disposed on the first planarization layer 435 and the intermediate electrode 430. The passivation layer may serve to prevent unnecessary electrical connections between components and to prevent contamination or damage from the outside, and may be omitted depending on the configuration and characteristics of the thin film transistor 420 and the light emitting device 440.

A light emitting device 440 is disposed on the second planarization layer 437, and the light emitting device 440 includes an anode 442, a light emitting unit 444, and a cathode 446.

The anode 442 may be disposed on the second planarization layer 437. The anode 442 is an electrode that serves to supply holes to the light emitting unit 444, and is connected to the intermediate electrode 430 through a contact hole in the second planarization layer 437, and through the intermediate electrode 430 It is electrically connected to the thin film transistor 420.

The anode 442 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), which is a transparent conductive material, but is not limited thereto.

In the case of a top emission that emits light to the upper portion where the cathode 446 is disposed, the anode 442 reflects the emitted light from the anode 442, so that the cathode 446 is disposed more smoothly. It may further include a reflective layer to be emitted.

For example, the anode 442 may be a two-layer structure in which a transparent conductive layer and a reflective layer made of a transparent conductive material are sequentially stacked, or a three-layer structure in which a transparent conductive layer, a reflective layer, and a transparent conductive layer are sequentially stacked. It may be silver (Ag) or an alloy containing silver.

The bank 450 is disposed on the anode 442 and the second planarization layer 437. The bank 450 may define each pixel by dividing an area that actually emits light. The bank 450 may be formed by photolithography after forming a photoresist on the anode 442. Photoresist refers to a photosensitive resin whose solubility in a developer is changed by the action of light, and a specific pattern can be obtained by exposing and developing the photoresist. The photoresist may be classified into a positive photoresist and a negative photoresist. The positive type photoresist refers to a photoresist whose solubility in the developer of the exposed portion is increased by exposure, and when a positive type photoresist is developed, a pattern in which the exposed portion is removed is obtained. In addition, the negative photoresist refers to a photoresist whose solubility in the developing solution of the exposed portion is significantly reduced by exposure, and when a negative photoresist is developed, a pattern in which a non-exposed portion is removed is obtained.

A FMM (Fine Metal Mask), which is a deposition mask, may be used to form the light emitting unit 444 of the light emitting device 440. In addition, in order to prevent damage that may occur due to contact with the deposition mask disposed on the bank 450, and to maintain a constant distance between the bank 450 and the deposition mask, poly organic transparent material is applied to the upper portion of the bank 450. A spacer 452 composed of one of mid, photoacrylic, and benzocyclobutene (BCB) may be disposed.

A light emitting unit 444 is disposed between the anode 442 and the cathode 446. The light emitting unit 444 serves to emit light, a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer, an electron transport layer (ETL), and an electron injection layer (Electron Injection Layer; EIL) may include at least one layer, and some components of the light emitting unit 444 may be omitted. Here, it is also possible to apply an electroluminescent layer and an inorganic emitting layer as the light emitting layer.

The hole injection layer is disposed on the anode 442 and serves to facilitate injection of holes. The hole injection layer is, for example, HAT-CN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10.11-hexacarbonitrile), CuPc (phthalocyanine), and NPD (N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine).

The hole transport layer is disposed on the hole injection layer and serves to smoothly transport holes to the light emitting layer. The hole transport layer is, for example, NPD (N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine), TPD(N,N'-bis -(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine), s-TAD(2,2',7,7'-tetrakis(N,N-dimethylamino)-9,9-spirofluorene) , And MTDATA(4,4',4"-Tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine).

The emission layer is disposed on the hole transport layer and may emit light of a specific color by including a material capable of emitting light of a specific color. In addition, the luminescent material may be formed using a phosphorescent material or a fluorescent material.

When the emission layer emits red, the peak wavelength to emit light may be in the range of 600 nm to 650 nm, and CBP (4,4'-bis (carbazol-9-yl)biphenyl) or mCP (1,3) Contains a host material containing -bis(carbazol-9-yl)benzene), PIQIr(acac)(bis(1-phenylisoquinoline)(acetylacetonate) iridium), PQIr(acac)(bis(1-phenylquinoline)(acetylacetonate) ) iridium), PQIr (tris(1-phenylquinoline) iridium), and PtOEP (octaethylporphyrin platinum). Alternatively, the fluorescent material may include PBD:Eu(DBM)3(Phen) or Perylene.

Here, the peak wavelength (λ refers to the maximum wavelength of EL (ElectroLuminescence). The wavelength at which the light-emitting layers constituting the light-emitting portion emit unique light is called PL (PhotoLuminescence), and the influence of the thickness or optical properties of the layers constituting the light-emitting layers. The light that is received is called emission, and EL (ElectroLuminescence) refers to light finally emitted by the electroluminescence display, and can be expressed as a product of PL (PhotoLuminescence) and emmittance.

When the emission layer emits green, the peak wavelength to emit may be in the range of 520 nm to 540 nm, and includes a host material including CBP or mCP, and Ir(ppy) ₃ (tris(2-phenylpyridine)iridium It may be made of a phosphorescent material containing a dopant material, such as Ir complex containing. In addition, it may be made of a fluorescent material containing Alq ₃ (tris(8-hydroxyquinolino)aluminum).

When the emission layer emits blue, the peak wavelength of emission may be in the range of 440 nm to 480 nm, and includes a host material including CBP or mCP, and FIrPic (bis(3,5-difluoro-2) It may be made of a phosphorescent material containing a dopant material containing -(2-pyridyl)phenyl-(2-carboxypyridyl)iridium), and spiro-DPVBi(4,4'-Bis(2,2-diphenyl-ethen) -1-yl)biphenyl), DSA(1-4-di-[4-(N,N-di-phenyl)amino]styryl-benzene), PFO (polyfluorene) polymer and PPV (polyphenylenevinylene) polymer It may be made of a fluorescent material containing one.

An electron transport layer is disposed on the light emitting layer, and the electron transport layer serves to facilitate the movement of electrons to the light emitting layer. The electron transport layer is, for example, Liq(8-hydroxyquinolinolato-lithium), PBD(2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), TAZ(3- (4-biphenyl)4-phenyl-5-tert-butylphenyl-1,2,4-triazole), spiro-PBD, BCP (2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline) and BAlq (bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminum).

An electron injection layer may be further disposed on the electron transport layer. The electron injection layer is an organic layer that facilitates injection of electrons from the cathode 446 and may be omitted. The electron injection layer may be a metal inorganic compound such as BaF2, LiF, NaCl, CsF, Li ₂ O and BaO, and HAT-CN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2, 3,6,7,10.11-hexacarbonitrile), CuPc(phthalocyanine), and NPD(N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine) It may be any one or more organic compounds.

An electron blocking layer or a hole blocking layer that blocks the flow of holes or electrons may be further disposed at a position adjacent to the light emitting layer. Each of the electron blocking layer or the hole blocking layer prevents the phenomenon of moving from the light emitting layer to the adjacent hole transport layer when electrons are injected into the light emitting layer or preventing the phenomenon of passing from the light emitting layer to the adjacent electron transport layer when holes are injected into the light emitting layer, thereby improving light emission efficiency. Can be improved.

The cathode 446 is disposed on the light emitting unit 444 and serves to supply electrons to the light emitting unit 444. Since the cathode 446 needs to supply electrons, it may be formed of a metal material such as magnesium (Mg), silver-magnesium (Ag-Mg), which is a conductive material having a low work function, but is not limited thereto.

In the case of the top emission method, the cathode 446 includes indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO) and tin oxide (Tin Oxide; TiO)-based transparent conductive oxide.

On the light emitting device 440, a thin film transistor 420 and a light emitting device 440 may be provided with an encapsulation unit 460 to prevent oxidation or damage due to moisture, oxygen, or impurities introduced from the outside. The encapsulation unit 460 may include a plurality of encapsulation layers, a foreign material compensation layer, and a plurality of barrier films arranged sequentially.

The encapsulation layer is disposed on the entire upper surface of the thin film transistor 420 and the light emitting device 440, and may be made of one of inorganic silicon nitride (SiNx) or aluminum oxide (AlyOz), but is not limited thereto.

A foreign material compensation layer may be disposed on the encapsulation layer, and an encapsulation layer may be further disposed on the foreign material compensation layer.

The foreign material compensation layer may be made of, for example, an organic material such as silicon oxycarbon (SiOCz), acrylic, or epoxy-based resin, but is not limited thereto. The foreign material compensation layer may compensate by covering the bends and foreign matters caused by defects due to cracks caused by particles or particles that may be generated during the process.

A barrier film may be further disposed on the encapsulation layer and the foreign material compensation layer. The barrier film may delay the penetration of oxygen and moisture from the outside. The barrier film is composed of a light-permeable and double-sided adhesive film, and may be, for example, an insulating material of any one of olefin, acrylic, and silicone. Alternatively, a barrier film made of any one of materials of Cyclolefin Polymer (COP), Cycloolefin Copolymer (COC), and Polycarbonate (PC) may be further stacked, but is not limited thereto.

5 is a perspective view of a tiling display device according to an exemplary embodiment of the present specification.

Referring to FIG. 5, the display device 500 according to an exemplary embodiment of the present disclosure configures the tiling display device 50 by combining the plurality of display devices 500 with each other. The display device 500 of FIG. 5 is an example, and the present invention is not limited thereto, and various display devices such as a liquid crystal display device may be applied, including the electroluminescent display device described for example in FIGS. 1 to 4. have.

Two or more display devices 500 are arranged side by side on the same plane, and display devices 500 adjacent to each other are fixed. At this time, bezel regions corresponding to the non-display regions of each display device 500 are disposed adjacent to each other to form a seam area (S), which is an area between the display regions of the plurality of display devices 500.

The tiling display device 50 may provide one image through a plurality of display devices 500 disposed on the same plane, and the viewer recognizes one provided image through a large area screen.

At this time, since the tiling display device 50 has a form in which a plurality of display devices 500 are disposed adjacent to each other, when the seam region S between the adjacent display devices 500 is recognized by the viewer, when viewing an image In the way, it interferes with the immersion of the city car.

As the seam region S of the tiling display device 50 is larger than a certain size, it is recognized more strongly to the user watching the image, and thus a problem occurs that the natural image cannot be displayed. Accordingly, it is very important to minimize the seam area S so that the user is not visible, so that the tiling display device 50 is recognized as one screen.

The tiling display device 50 according to the exemplary embodiment of the present specification minimizes the bezel area of the display device 500 so that the seam area S is recognized by the user as one screen.

The cross-sectional structure I'-I' of the seam region S in FIGS. 6A to 6E will be described in detail.

6A to 6E are cross-sectional views of a manufacturing process of a tiling display device according to an exemplary embodiment of the present specification.

Referring to FIG. 6A, the display device 600 described with reference to FIGS. 1 to 4 is provided. In this case, the display device 600 is an example of an electroluminescent display device, but is not limited thereto, and various display devices such as a liquid crystal display device may be applied.

The display panel 610 is provided by disposing the components of the electroluminescent display device on a substrate made of a material having flexible characteristics described in FIG. 4.

The touch substrate 620 is disposed on the display panel 610. The touch substrate 620 converts a contact position directly in contact with a user's hand or object into an electrical signal, and an instruction selected at the contact position is accepted as an input signal and is displayed on the screen through the display panel 610.

The touch substrate 620 is a mutual-capacitance type configured to intersect a plurality of touch driving electrodes and a plurality of touch sensing electrodes, or a self-capacitance method arranged only by a plurality of touch sensing electrodes (Self -Capacitance Type) may be applied, and an adhesive layer may be disposed on the upper or lower surface to be fixed by bonding with the upper component or the lower component.

The polarizing plate 630 is disposed on the touch substrate 620. The polarizing plate 630 suppresses reflection of external light that may be generated when the user uses the display device 600 from the outside. Natural light may flow from the outside and be reflected by a reflector included in the anode of the light emitting element, or may be reflected by an electrode made of metal disposed under the light emitting element, and the image may not be recognized by the reflected light. To compensate for this, the polarizing plate 630 polarizes light introduced from the outside in a specific direction, and prevents reflected light from being emitted to the outside of the electroluminescence display 600 again.

The adhesive layer 640 is disposed on the polarizing plate 630. The adhesive layer 640 may be formed of a transparent adhesive resin (OCR) or a transparent adhesive film (Optically Cleared Film; OCA film) material, but is not limited thereto.

A separate adhesive layer may be further disposed between the display panel 610, the touch substrate 620, and the polarizing plate 630 to be fixed by adhering to each other.

The area not overlapping the touch substrate 620 and the polarizing plate 630 on the display panel 610 corresponds to a bezel area, which is a non-display area (N/A) described in FIG. 3. The first black matrix 615 is disposed on the bezel area. The first black matrix may include a material including black pigment. The first black matrix 615 is disposed to prevent unnecessary light from being emitted to the non-display area N/A.

The back plate 650 is disposed under the display panel 610. When the display panel 610 is provided as a substrate having flexible characteristics, the support substrate after the manufacturing process of the electroluminescent display device 600 proceeds in a situation in which a support substrate made of glass is disposed under the display panel 610 Can be released separately.

The back plate 650 is disposed under the display panel 610 to support the display panel 610 having flexible characteristics even after the support substrate is released. The back plate 650 may be made of a plastic thin film composed of polyimide, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), and combinations, but is not limited thereto.

A bending jig 660 is disposed under the back plate 650. The bending jig 660 is disposed such that a region of the first black matrix 615 disposed on the display panel 610 overlaps with an end of the bending jig 660. At this time, the end of the bending jig 660 in contact with the back plate 650 has a round shape.

On the bending region where the first black matrix 615 is disposed, a force is applied to the display panel 610 to the end having a round shape of the bending jig 650 disposed on the lower surface of the display panel 610 and the back plate 650. In accordance, bending is performed in the direction indicated by the arrow in FIG. 6A.

The upper end of the bending jig 660 has a round shape, and acrylic resin, epoxy resin, phenol resin, polyamide resin, polyimide resin Resin), unsaturated polyester resins (Unsaturated Polyesters Resin), polyphenylene resins (Polyphenylene Resin), polyphenylene sulfide resins (Polyphenylenesulfides Resin), and one or more of benzocyclobutene (Benzocyclobutene) or a metal or metal (Metal) It may be formed of, but is not limited thereto.

Referring to FIG. 6B, a plurality of bending bezel regions of the display device 600 in which the bezel regions of the display panel 610 bent as described in FIG. 6A are bent to be adjacent to each other. Two or more display devices 600 are arranged side by side on the same plane, and arranged to match the stage 670 disposed under the plurality of display devices 600 to form a tiled display device 60 shape. At this time, the bezel regions of each display device 600 are disposed adjacent to each other to form an area between the display areas of the plurality of display devices 600 as a seam region S of the tiling display device 60.

The stage 670 may be composed of a metal or plastic composed of polyimide, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), and combinations, but is not limited thereto.

The stage 670 is spaced a certain distance so that the storage surface 672, which is a flat plate for storing the plurality of display devices 600, and the bezel regions of the plurality of display devices 600 are adjacent to each other and are not damaged. It includes a protrusion 674 that protrudes upward from the storage surface 672 so as to. At this time, the protrusion 674 may have a thickness of at least 1 mm so that the plurality of display devices 600 do not break while contacting each other, but is not limited to this thickness.

Referring to FIG. 6C, a plurality of display devices is disposed by arranging a cover glass 680 that protects the appearance of the display device 600 on a plurality of display devices 600 arranged side by side on the same plane. The 600 can protect internal components from external shocks. It may be made of a film having flexibility such as a material such as plastic, which is excellent in stiffness, glass or thermoformable, and has good processability, but is not limited thereto. The glass or tempered glass may have, for example, any one of Sapphire Glass and Gorilla Glass, or a bonding structure thereof.

The second black matrix 685 is disposed on the cover glass 640 of the region overlapping the region of the panel black matrix 615 disposed on the bezel region of the plurality of display devices 600, so that unnecessary light is external to the outside. Do not emit light. At this time, the second black matrix 685 region becomes a seam region S of the tiling display device 60.

Referring to FIG. 6D, the stage 670 disposed under the plurality of display devices 600 included in the tiling display device 60 to arrange the plurality of display devices 600 side by side on the same plane is removed. do.

Referring to FIG. 6E, the tiling display device 60 in which a plurality of display devices 600 are arranged side by side on the same plane may provide a single image through the plurality of display devices 600 disposed on the same plane. In addition, the viewer recognizes one provided image through a large-area screen.

Although the seam region S between the plurality of display devices 500 of the tiling display device 60 is perceived by a viewer, the immersive feeling is disturbed when viewing an image, but the tiling display device according to an embodiment of the present specification ( 60) minimizes by bending each bezel area of the plurality of display devices 600 so that the seam area S is recognized as a single screen without being recognized by the user. At this time, the width of the seam area S has a width reduced by more than half compared to a conventional display device that is not bent, and the width of the seam area S is reduced to within 5 mm, so that the seam area S is not recognized by the user. Let it be recognized as one screen.

A tiled display device according to an exemplary embodiment of the present specification includes a substrate including a display area and a bezel area that is a non-display area surrounding an outer edge of the display area, a thin film transistor and a light emitting device disposed on the display area of the substrate, and a display of the substrate It includes a polarizing plate disposed on the region, a first black matrix disposed on the bezel region of the substrate, a back plate disposed under the substrate and a bending jig disposed under the back plate, and the ends disposed on one region of the bezel region And a plurality of display devices, the substrate and the back plate of the bezel area are bent in contact with a bending jig, and the bezel areas bent on the same plane are disposed adjacent to each other.

The tiling display device according to the exemplary embodiment of the present specification further includes a cover glass disposed on the plurality of display devices.

The cover glass of the tiling display device according to the exemplary embodiment of the present specification includes a second black matrix in an area overlapping with the first black matrix.

The tiling display device according to the exemplary embodiment of the present specification further includes a touch substrate disposed on the substrate.

In the tiling display device according to the exemplary embodiment of the present specification, at least a portion of the end of the bending jig that contacts the back plate is round.

The back plate of the tiling display device according to the exemplary embodiment of the present specification includes one of polyimide, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET).

An adhesive layer is disposed between the polarizing plate and the cover glass of the tiling display device according to the exemplary embodiment of the present specification, and is bonded to each other by the adhesive layer.

The adhesive layer of the tiling display device according to the exemplary embodiment of the present specification is made of a transparent adhesive resin (OCR) or a transparent adhesive film (Optically Cleared Film, OCA film) material.

A tiling display device according to an exemplary embodiment of the present disclosure includes preparing a plurality of display devices including a display area and a bezel area that is a non-display area surrounding an outer periphery of the display area. A step of arranging on a stage and removing a stage such that bezel regions bent on a plane are adjacent to each other, and preparing a plurality of display devices include: a display region and a non-display region surrounding the outer periphery of the display region Forming a substrate including an in-bezel area, disposing a thin film transistor and a light emitting device on the display area, disposing a panel black matrix on the bezel area, placing a polarizing plate on the display area, and under the substrate Disposing a back plate on the back plate, placing a bending jig on which an end of one area of the bezel area is disposed under the back plate, and bending a substrate of the bezel area and one area of the back plate on the end of the bending jig. Including.

The stage of the tiling display device according to the exemplary embodiment of the present specification is manufactured by including a storage unit accommodating a plurality of display devices and a protrusion contacting a bent bezel area.

A tiling display device according to an exemplary embodiment of the present disclosure provides a plurality of display devices, and then arranges cover glasses on the plurality of display devices after the steps of placing the bezel areas bent on the same plane adjacent to each other on the stage. It further comprises a.

The cover glass of the tiling display device according to the exemplary embodiment of the present specification is manufactured by including the second black matrix in an area overlapping the panel black matrix.

The preparing of the plurality of display devices of the tiling display device according to the exemplary embodiment of the present specification further includes disposing a touch substrate on the substrate.

At least a portion of the tip of the bending jig of the tiling display device according to the exemplary embodiment of the present disclosure in contact with the back plate is manufactured in a round shape.

The back plate of the tiling display device according to the exemplary embodiment of the present specification is manufactured by configuring one of polyimide, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET).

The tiling display device according to an exemplary embodiment of the present specification is manufactured by further comprising a step of disposing a cover glass on a plurality of display devices, an adhesive layer is disposed between the polarizing plate and the cover glass, and the adhesive layers are adhered to each other.

The adhesive layer of the tiling display device according to the exemplary embodiment of the present specification is manufactured by constructing a transparent adhesive resin (OCR) or a transparent adhesive film (OCA film) material.

The embodiments of the present invention have been described in more detail with reference to the accompanying drawings, but the present invention is not necessarily limited to these embodiments, and may be variously modified without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The scope of protection of the present invention should be interpreted by the claims, and all technical spirits within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

50, 60: tiling display 100, 500, 600: display
110: image processing unit 120: timing controller
130: data driver 140: gate driver
150, 300, 400, 610: Display panel 160, 200: Pixel
220: gate line 230: data line
240: switching transistor 250: driving transistor
260: compensation circuit 270, 440: light emitting element
310, 410: substrate 370: circuit wiring
390: gate driver 395: pad
420: thin film transistor 422: gate electrode
424: source electrode 426: drain electrode
428: semiconductor layer 431: first insulating layer
433: second insulating layer 435: first planarization layer
437: second planarization layer 442: anode
444: light emitting portion 446: cathode
450: Bank 452: Spacer
460: sealing portion 615: the first black matrix
620: touch substrate 630: polarizer
640: adhesive layer 650: back plate
660: bending jig 670: stage
672: storage surface 674: protrusion
680: cover glass 685: second black matrix
A/A: Display area N/A: Non-display area
B/A: Bending area S/L: Scan line
S: seam area

Claims (17)

A substrate including a display area and a bezel area which is a non-display area surrounding an outer periphery of the display area;
A thin film transistor and a light emitting device disposed on the display area of the substrate;
A polarizing plate disposed on the display area of the substrate;
A first black matrix disposed on a bezel region of the substrate;
A back plate disposed under the substrate; And
It is disposed under the back plate, and includes a plurality of display devices each including a bending jig having an end disposed in one region of the bezel region,
The substrate and the back plate of the bezel area are bent in contact with the bending jig,
In the plurality of display devices, a tiled display device in which the bent bezel regions are disposed adjacent to each other on the same plane. According to claim 1,
A tiled display device further comprising a cover glass disposed on the plurality of display devices. According to claim 2,
The cover glass includes a second black matrix in an area overlapping with the first black matrix. According to claim 1,
A tiled display device further comprising a touch substrate disposed on the substrate. According to claim 1,
At least a portion of the end of the bending jig that comes into contact with the back plate has a round shape. According to claim 1,
The back plate is made of one of polyimide, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), a tiling display device. According to claim 2,
An adhesive layer is disposed between the polarizing plate and the cover glass, and is bonded to each other by the adhesive layer. The method of claim 7,
The adhesive layer is composed of a transparent adhesive resin (Optically Cleared Resin; OCR) or a transparent adhesive film (Optically Cleared Film; OCA film), tiling display device. Preparing a plurality of display devices including a display area and a bezel area, which is a non-display area surrounding the outside of the display area;
Providing a plurality of the display devices and disposing the bezel regions on the same plane on a stage such that they are adjacent to each other; And
And removing the stage,
The preparing of the plurality of display devices may include:
Forming a substrate including a display area and a bezel area which is a non-display area surrounding an outer periphery of the display area;
Disposing a thin film transistor and a light emitting element on the display area;
Placing a panel black matrix on the bezel area;
Disposing a polarizing plate on the display area;
Placing a back plate under the substrate;
Disposing a bending jig on which an end of one region of the bezel region is disposed under the back plate; And
And bending a region of the substrate and the back plate of the bezel region in contact with an end of the bending jig. The method of claim 9,
The stage includes a storage unit for accommodating the plurality of display devices and a protruding part contacting the bent bezel area. The method of claim 9,
After providing a plurality of the display devices and arranging the bezel regions on the same plane so as to be adjacent to each other on the stage,
A method of manufacturing a tiling display device further comprising disposing a cover glass on the plurality of display devices. The method of claim 11,
The method of manufacturing a tiling display device, wherein the cover glass includes a second black matrix in an area overlapping the panel black matrix. The method of claim 9,
The preparing of the plurality of display devices may include:
A method of manufacturing a tiling display device further comprising disposing a touch substrate on the substrate. The method of claim 9,
A method of manufacturing a tiling display device, wherein at least a portion of the end of the bending jig in contact with the back plate is round. The method of claim 9,
The back plate is made of one of polyimide, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), a method of manufacturing a tiling display device. The method of claim 11,
In the step of disposing the cover glass on the plurality of display devices,
An adhesive layer is disposed between the polarizing plate and the cover glass, and further comprising bonding each other by the adhesive layer. The method of claim 16,
The adhesive layer is made of a transparent adhesive resin (Optically Cleared Resin; OCR) or a transparent adhesive film (Optically Cleared Film; OCA film) material, a method of manufacturing a tiling display device.

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