KR20200044426A - 식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법 - Google Patents

식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법 Download PDF

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Publication number
KR20200044426A
KR20200044426A KR1020180125172A KR20180125172A KR20200044426A KR 20200044426 A KR20200044426 A KR 20200044426A KR 1020180125172 A KR1020180125172 A KR 1020180125172A KR 20180125172 A KR20180125172 A KR 20180125172A KR 20200044426 A KR20200044426 A KR 20200044426A
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KR
South Korea
Prior art keywords
coupling agent
silane
silane coupling
nitride film
etching
Prior art date
Application number
KR1020180125172A
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English (en)
Korean (ko)
Inventor
이기우
김나림
김정환
김태희
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to KR1020180125172A priority Critical patent/KR20200044426A/ko
Priority to CN201910988892.3A priority patent/CN111073650B/zh
Priority to SG10201909721VA priority patent/SG10201909721VA/en
Publication of KR20200044426A publication Critical patent/KR20200044426A/ko
Priority to KR1020240062991A priority patent/KR20240076403A/ko

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Weting (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020180125172A 2018-10-19 2018-10-19 식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법 KR20200044426A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020180125172A KR20200044426A (ko) 2018-10-19 2018-10-19 식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법
CN201910988892.3A CN111073650B (zh) 2018-10-19 2019-10-17 蚀刻液组合物及选择添加于其中的硅烷系偶联剂的方法
SG10201909721VA SG10201909721VA (en) 2018-10-19 2019-10-18 Etchant composition and method of selecting silane-based coupling agent contained therein
KR1020240062991A KR20240076403A (ko) 2018-10-19 2024-05-14 식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180125172A KR20200044426A (ko) 2018-10-19 2018-10-19 식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020240062991A Division KR20240076403A (ko) 2018-10-19 2024-05-14 식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법

Publications (1)

Publication Number Publication Date
KR20200044426A true KR20200044426A (ko) 2020-04-29

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ID=70310430

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020180125172A KR20200044426A (ko) 2018-10-19 2018-10-19 식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법
KR1020240062991A KR20240076403A (ko) 2018-10-19 2024-05-14 식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020240062991A KR20240076403A (ko) 2018-10-19 2024-05-14 식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법

Country Status (3)

Country Link
KR (2) KR20200044426A (zh)
CN (1) CN111073650B (zh)
SG (1) SG10201909721VA (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023223936A1 (ja) * 2022-05-16 2023-11-23 関東化学株式会社 窒化ケイ素エッチング液組成物

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115873599B (zh) * 2022-10-10 2024-05-17 湖北兴福电子材料股份有限公司 氮化硅/氧化硅的3d nand结构片的选择性蚀刻液

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130092872A1 (en) 2011-10-18 2013-04-18 Soulbrain Co., Ltd. Compositions for etching and methods of forming a semiconductor device using the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4799332B2 (ja) * 2006-09-12 2011-10-26 株式会社東芝 エッチング液、エッチング方法および電子部品の製造方法
JP4983422B2 (ja) * 2007-06-14 2012-07-25 東ソー株式会社 エッチング用組成物及びエッチング方法
JP2012099550A (ja) * 2010-10-29 2012-05-24 Sanyo Chem Ind Ltd 窒化ケイ素用エッチング液
US9368647B2 (en) * 2011-10-18 2016-06-14 Samsung Electronics Co., Ltd. Compositions for etching
US10269591B2 (en) * 2013-10-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of selectively removing silicon nitride and single wafer etching apparatus thereof
KR101539375B1 (ko) * 2014-07-17 2015-07-27 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
KR20160050536A (ko) * 2014-10-30 2016-05-11 램테크놀러지 주식회사 질화막 식각 조성물 및 이를 이용한 반도체 장치의 제조 방법
US10167425B2 (en) * 2016-05-04 2019-01-01 Oci Company Ltd. Etching solution capable of suppressing particle appearance
CN107573940A (zh) * 2016-07-04 2018-01-12 Oci有限公司 氮化硅膜蚀刻溶液
US10995269B2 (en) * 2016-11-24 2021-05-04 Samsung Electronics Co., Ltd. Etchant composition and method of fabricating integrated circuit device using the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130092872A1 (en) 2011-10-18 2013-04-18 Soulbrain Co., Ltd. Compositions for etching and methods of forming a semiconductor device using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023223936A1 (ja) * 2022-05-16 2023-11-23 関東化学株式会社 窒化ケイ素エッチング液組成物

Also Published As

Publication number Publication date
CN111073650B (zh) 2021-11-23
SG10201909721VA (en) 2020-05-28
KR20240076403A (ko) 2024-05-30
CN111073650A (zh) 2020-04-28

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