SG10201909721VA - Etchant composition and method of selecting silane-based coupling agent contained therein - Google Patents
Etchant composition and method of selecting silane-based coupling agent contained thereinInfo
- Publication number
- SG10201909721VA SG10201909721VA SG10201909721VA SG10201909721VA SG10201909721VA SG 10201909721V A SG10201909721V A SG 10201909721VA SG 10201909721V A SG10201909721V A SG 10201909721VA SG 10201909721V A SG10201909721V A SG 10201909721VA SG 10201909721V A SG10201909721V A SG 10201909721VA
- Authority
- SG
- Singapore
- Prior art keywords
- coupling agent
- agent contained
- based coupling
- etchant composition
- selecting silane
- Prior art date
Links
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title 1
- 239000007822 coupling agent Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910000077 silane Inorganic materials 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180125172A KR20200044426A (en) | 2018-10-19 | 2018-10-19 | An etchant composition and a selecting method of silane coupling agent contained therein |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201909721VA true SG10201909721VA (en) | 2020-05-28 |
Family
ID=70310430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201909721VA SG10201909721VA (en) | 2018-10-19 | 2019-10-18 | Etchant composition and method of selecting silane-based coupling agent contained therein |
Country Status (3)
| Country | Link |
|---|---|
| KR (2) | KR20200044426A (en) |
| CN (1) | CN111073650B (en) |
| SG (1) | SG10201909721VA (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023168669A (en) * | 2022-05-16 | 2023-11-29 | 関東化学株式会社 | Silicon nitride etchant composition |
| CN115873599B (en) * | 2022-10-10 | 2024-05-17 | 湖北兴福电子材料股份有限公司 | Selective etching solution for 3D NAND structure sheet of silicon nitride/silicon oxide |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4799332B2 (en) * | 2006-09-12 | 2011-10-26 | 株式会社東芝 | Etching solution, etching method, and electronic component manufacturing method |
| JP4983422B2 (en) * | 2007-06-14 | 2012-07-25 | 東ソー株式会社 | Etching composition and etching method |
| JP2012099550A (en) * | 2010-10-29 | 2012-05-24 | Sanyo Chem Ind Ltd | Etchant for silicon nitride |
| US9368647B2 (en) * | 2011-10-18 | 2016-06-14 | Samsung Electronics Co., Ltd. | Compositions for etching |
| KR101782329B1 (en) | 2011-10-18 | 2017-09-28 | 삼성전자주식회사 | Compositions for etching and methods for forming semiconductor memory devices using the same |
| US10269591B2 (en) * | 2013-10-23 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of selectively removing silicon nitride and single wafer etching apparatus thereof |
| KR101539375B1 (en) * | 2014-07-17 | 2015-07-27 | 솔브레인 주식회사 | Composition for etching and manufacturing method of semiconductor device using the same |
| KR20160050536A (en) * | 2014-10-30 | 2016-05-11 | 램테크놀러지 주식회사 | Etchant compositions for nitride layers and methods of manufacturing semiconductor devices using the same |
| US10167425B2 (en) * | 2016-05-04 | 2019-01-01 | Oci Company Ltd. | Etching solution capable of suppressing particle appearance |
| TW201802231A (en) * | 2016-07-04 | 2018-01-16 | Oci有限公司 | Etching solution for silicon nitride |
| US10995269B2 (en) * | 2016-11-24 | 2021-05-04 | Samsung Electronics Co., Ltd. | Etchant composition and method of fabricating integrated circuit device using the same |
-
2018
- 2018-10-19 KR KR1020180125172A patent/KR20200044426A/en not_active IP Right Cessation
-
2019
- 2019-10-17 CN CN201910988892.3A patent/CN111073650B/en active Active
- 2019-10-18 SG SG10201909721VA patent/SG10201909721VA/en unknown
-
2024
- 2024-05-14 KR KR1020240062991A patent/KR20240076403A/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| CN111073650A (en) | 2020-04-28 |
| CN111073650B (en) | 2021-11-23 |
| KR20200044426A (en) | 2020-04-29 |
| KR20240076403A (en) | 2024-05-30 |
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