SG10201909721VA - Etchant composition and method of selecting silane-based coupling agent contained therein - Google Patents

Etchant composition and method of selecting silane-based coupling agent contained therein

Info

Publication number
SG10201909721VA
SG10201909721VA SG10201909721VA SG10201909721VA SG10201909721VA SG 10201909721V A SG10201909721V A SG 10201909721VA SG 10201909721V A SG10201909721V A SG 10201909721VA SG 10201909721V A SG10201909721V A SG 10201909721VA SG 10201909721V A SG10201909721V A SG 10201909721VA
Authority
SG
Singapore
Prior art keywords
coupling agent
agent contained
based coupling
etchant composition
selecting silane
Prior art date
Application number
SG10201909721VA
Other languages
English (en)
Inventor
Gi-Woo Lee
Na-Rim Kim
Jeong-Hwan Kim
Tae-Hee Kim
Original Assignee
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Publication of SG10201909721VA publication Critical patent/SG10201909721VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Weting (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
SG10201909721VA 2018-10-19 2019-10-18 Etchant composition and method of selecting silane-based coupling agent contained therein SG10201909721VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180125172A KR20200044426A (ko) 2018-10-19 2018-10-19 식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법

Publications (1)

Publication Number Publication Date
SG10201909721VA true SG10201909721VA (en) 2020-05-28

Family

ID=70310430

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201909721VA SG10201909721VA (en) 2018-10-19 2019-10-18 Etchant composition and method of selecting silane-based coupling agent contained therein

Country Status (3)

Country Link
KR (2) KR20200044426A (zh)
CN (1) CN111073650B (zh)
SG (1) SG10201909721VA (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023168669A (ja) * 2022-05-16 2023-11-29 関東化学株式会社 窒化ケイ素エッチング液組成物
CN115873599B (zh) * 2022-10-10 2024-05-17 湖北兴福电子材料股份有限公司 氮化硅/氧化硅的3d nand结构片的选择性蚀刻液

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4799332B2 (ja) * 2006-09-12 2011-10-26 株式会社東芝 エッチング液、エッチング方法および電子部品の製造方法
JP4983422B2 (ja) * 2007-06-14 2012-07-25 東ソー株式会社 エッチング用組成物及びエッチング方法
JP2012099550A (ja) * 2010-10-29 2012-05-24 Sanyo Chem Ind Ltd 窒化ケイ素用エッチング液
US9368647B2 (en) * 2011-10-18 2016-06-14 Samsung Electronics Co., Ltd. Compositions for etching
KR101782329B1 (ko) 2011-10-18 2017-09-28 삼성전자주식회사 식각용 조성물 및 이를 이용하는 반도체 기억 소자의 형성 방법
US10269591B2 (en) * 2013-10-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of selectively removing silicon nitride and single wafer etching apparatus thereof
KR101539375B1 (ko) * 2014-07-17 2015-07-27 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
KR20160050536A (ko) * 2014-10-30 2016-05-11 램테크놀러지 주식회사 질화막 식각 조성물 및 이를 이용한 반도체 장치의 제조 방법
US10167425B2 (en) * 2016-05-04 2019-01-01 Oci Company Ltd. Etching solution capable of suppressing particle appearance
TW201802231A (zh) * 2016-07-04 2018-01-16 Oci有限公司 氮化矽膜蝕刻溶液
US10995269B2 (en) * 2016-11-24 2021-05-04 Samsung Electronics Co., Ltd. Etchant composition and method of fabricating integrated circuit device using the same

Also Published As

Publication number Publication date
CN111073650A (zh) 2020-04-28
CN111073650B (zh) 2021-11-23
KR20200044426A (ko) 2020-04-29
KR20240076403A (ko) 2024-05-30

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