KR20190121917A - Light emitting device package and light module - Google Patents

Abstract

According to an embodiment, a light emitting device package comprises: a body including first and second through holes penetrating the upper and lower surfaces; a light emitting device including first and second bonding parts disposed on the first and second through holes, respectively; and first and second metal parts disposed on the lower surface of the body and spaced apart. The first metal part includes a first inner extension part extending from the lower surface of the body into the first through hole and a first outer extension part disposed in a portion of a first side surface of the body. The second metal part includes a second inner extension part extending from the lower surface of the body into the second through hole and a second outer extension part disposed in a portion of a second side surface of the body. The first side surface of the body includes a first inclined surface where the first outer extension part is disposed on a lower part thereof. The second side surface of the body includes a second inclined surface where the second outer extension part is disposed on a lower part thereof. The distance between the first and second inclined surfaces changes in the vertical direction from the lower surface of the body. In addition, according to the embodiment, a light source module includes a circuit board and the light emitting device package disposed on the circuit board, and the light emitting device package is disposed in a side view on the circuit board. According to the present invention, the heat dissipation characteristics of the package can be increased.

Description

Light emitting device package and light source module {LIGHT EMITTING DEVICE PACKAGE AND LIGHT MODULE}

Embodiments relate to a light emitting device package and a light source device including the same.

A semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy to adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using Group 3-Group 5 or Group 2-6 compound semiconductor materials have been developed using thin film growth technology and device materials. There is an advantage that can implement light of various wavelength bands such as green, blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3 to 5 or 2 to 6 group compound semiconductor material may implement a white light source having high efficiency by using a fluorescent material or combining colors. Such a light emitting device has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving device such as a photodetector or a solar cell is also fabricated using a Group 3-5 Group 2 or Group 6 compound semiconductor material, development of device materials absorbs light in various wavelength ranges to generate a photocurrent. As a result, light in various wavelengths can be used from gamma rays to radio wavelengths. In addition, such a light receiving device has the advantages of fast response speed, safety, environmental friendliness and easy control of the device material, so that it can be easily used in power control or microwave circuits or communication modules.

Therefore, the semiconductor device may replace a light emitting diode backlight, a fluorescent lamp, or an incandescent bulb, which replaces a cold cathode tube (CCFL) constituting a backlight module of an optical communication means, a backlight of a liquid crystal display (LCD) display device. Applications are expanding to include white light emitting diode lighting devices, automotive headlights and traffic lights, and sensors that detect gas or fire. In addition, the semiconductor device may be extended to high frequency application circuits, other power control devices, and communication modules.

The light emitting device may be provided as a pn junction diode having a characteristic in which electrical energy is converted into light energy using, for example, a group 3-5 element or a group 2-6 element on the periodic table. Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. In particular, ultraviolet (UV) light emitting devices, blue light emitting devices, green light emitting devices, yellow light emitting devices, and red light emitting devices using nitride semiconductors are commercially used and widely used.

For example, in the case of an ultraviolet light emitting device, a light emitting diode which emits light distributed in a wavelength range of 200 nm to 400 nm, and is used in the wavelength band, for short wavelengths, for sterilization and purification, and for long wavelengths, an exposure machine or a curing machine. Can be used.

 Ultraviolet rays can be classified into UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm), and UV-C (200nm ~ 280nm) in order of long wavelength. The UV-A (315nm ~ 400nm) area is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, forgery discrimination, photocatalyst sterilization, special lighting (aquarium / agriculture, etc.), and UV-B (280nm ~ 315nm). ) Area is used for medical purposes, UV-C (200nm ~ 280nm) area is applied to air purification, water purification, sterilization products.

Meanwhile, as semiconductor devices capable of providing high outputs are required, research on semiconductor devices capable of increasing output by applying power is being conducted.

In addition, in the semiconductor device package, research is being conducted to improve the reliability of the package.

In addition, in the semiconductor device package, research has been conducted on a method of improving light extraction efficiency of the semiconductor device and improving the brightness at the package end.

In addition, in the semiconductor device package, research is being conducted to improve the bonding strength between the semiconductor device and the package, and to improve the reliability of the package by effectively dissipating heat emitted from the semiconductor device. .

In addition, in the semiconductor device package, research has been conducted on ways to reduce manufacturing costs and improve manufacturing yields by improving process efficiency and structural changes.

Embodiments provide a light emitting device package and a light source module in which a metal part is disposed on a side of a body.

In addition, an embodiment is to provide a light emitting device package and a light source module that can improve the heat dissipation characteristics of the package.

In addition, the embodiment is to provide a light emitting device package and a light source module that can improve the reliability of the metal portion disposed outside the body.

In addition, the embodiment provides a light emitting device package and a light source module that can smoothly supply the conductive portion between the light emitting device package and the circuit board.

In addition, the embodiment is to provide a light emitting device package and a light source module that can improve the reliability and electrical properties between the package and the circuit board.

In addition, the embodiment is to provide a light emitting device package and a light source module that can prevent the body from damage, such as discoloration and deformation in a high temperature environment in the process of manufacturing the light emitting device package.

In addition, the embodiment is to provide a light emitting device package and a light source module that can prevent the phenomenon that the bonding region between the light emitting device and the package body re-melting in the process of bonding the light emitting device package to the substrate.

The light emitting device package according to the embodiment includes a body including first and second through holes penetrating the top and bottom surfaces, and a first and second bonding part disposed on the first and second through holes, respectively. And first and second metal parts disposed on a lower surface of the body and spaced apart from each other, wherein the first metal part extends from the lower surface of the body into the first through hole and the first of the body. A first outer extension part disposed in a partial side surface area, the second metal part being disposed in a second inner extension part extending from the lower surface of the body into the second through hole and in the second side partial area of the body; 2 an outer extension, the first side of the body including a first inclined surface on which the first outer extension is disposed, and the second side of the body facing the first side, The spacing between the first and a second inclined surface portion 2 disposed outside extension, said first and second inclined surfaces are gradually changed in the vertical direction from the lower surface of the body.

In addition, the light source module according to the embodiment includes a circuit board and the light emitting device package disposed on the circuit board, the light emitting device package is disposed in a side view on the circuit board.

The embodiment may provide a heat dissipation path by disposing a metal part on the through hole, the bottom surface and the side surface of the body. Accordingly, it is possible to effectively discharge the heat emitted from the light emitting device can improve the reliability of the light emitting device package.

In addition, the embodiment can connect the metal portion and the bonding portion of the light emitting device through the through hole of the body to improve the adhesion and electrical properties of the bonding portion of the flip chip (flip chip).

In addition, the embodiment may be disposed between the lower portion and the body of the light emitting device to improve the adhesion and support between the light emitting device and the body. In addition, a first recess may be formed on the first body, and the first recess may provide an alignment position of the light emitting device. In addition, the supply amount of the first resin can be adjusted by the first recess, and the adhesion between the light emitting element and the body can be improved.

In addition, the embodiment can smoothly supply the conductive portion between the package and the circuit board in the process of bonding the light emitting device package to the circuit board. In detail, the conductive part may be smoothly supplied on the circuit board and the metal part by a metal part having a predetermined inclination angle. Accordingly, the bonding force, electrical characteristics, and heat dissipation characteristics between the circuit board and the light emitting device package may be improved.

In addition, the metal part may be disposed on the same plane as the side surface of the body without protruding from the side surface of the body. Accordingly, the metal part can be prevented from being damaged by an external physical shock, etc., and the reliability of the metal part and the light emitting device package can be improved.

In addition, the embodiment can prevent the body from being damaged, such as discoloration and deformation in a high temperature environment in the manufacturing process of the light emitting device package, the light emitting device and the package body in the process of bonding the light emitting device package to the substrate, etc. It is possible to prevent a phenomenon in which the bonding region therebetween is re-melting.

In addition, the embodiment can manufacture a plurality of light emitting device packages having a metal portion disposed on the side of the body at a time. Accordingly, manufacturing time and manufacturing cost of the light emitting device package can be reduced, and process efficiency can be improved.

1 is a perspective view of a light emitting device package according to an embodiment.
2 is a plan view of a light emitting device package according to an embodiment.
3 is a rear view of the light emitting device package according to the embodiment.
4 is a side view of a light emitting device package according to an embodiment.
5 is a plan view illustrating only a body and a metal part of the light emitting device package according to the embodiment.
FIG. 6 is a cross-sectional view taken along line AA ′ of FIG. 2.
7 is a cross-sectional view illustrating an example in which a recess is disposed in a body as a modification of the light emitting device package of FIG. 5.
8 and 9 illustrate an example of a module in which a light emitting device package according to an embodiment is disposed on a circuit board.
10 is a view illustrating a part of a manufacturing method of a light emitting device package according to an embodiment.
11 is a side cross-sectional view showing an example of a light emitting device according to the embodiment.

Embodiments of the invention will be described with reference to the accompanying drawings. In the description of an embodiment of the invention, each layer (film), region, pattern or structures may be “on / over” or “under” the substrate, each layer (film), region, pad or pattern. "On / over" and "under" are defined as being "directly" or "indirectly" through another layer. It includes everything. In addition, the reference to the top / top or bottom of each layer will be described based on the drawings, but embodiments are not limited thereto.

A semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the present invention, the device package may include a semiconductor device or a light emitting device that emits light of ultraviolet rays, infrared rays, or visible light. Hereinafter, a description will be given based on a case in which a light emitting device is applied as an example of a semiconductor device. The light emitting device may include a non-light emitting device such as a zener diode or a sensing device that monitors a wavelength or heat. Can be. Hereinafter, a description will be given based on a case in which a light emitting device is applied as an example of a semiconductor device, and the light emitting device package will be described in detail.

Prior to describing a light emitting device package according to an embodiment of the present invention, the first direction may be the x-axis direction shown in the drawings, and the second direction may be the direction orthogonal to the x-axis direction in the y-axis direction shown in the drawings. Can be. In addition, the third direction may be a direction perpendicular to the x-axis and the y-axis in the z-axis direction shown in the drawing.

1 to 4 are respectively a perspective view, a plan view, a back view and a side view of a light emitting device package according to the embodiment. 5 is a plan view illustrating a body and a metal part of the light emitting device package according to the embodiment, and FIG. 6 is a cross-sectional view illustrating a cross section taken along the direction A-'A of FIG. 2.

1 to 6, the light emitting device package 1000 according to the embodiment may include a body 100, a light emitting device 500, and a metal part 200.

The light emitting device package 1000 may extend in a first direction and a second direction. The length of the first direction and the length of the second direction of the light emitting device package 1000 may be the same or different. For example, the length of the first direction of the light emitting device package 1000 may be equal to or longer than the length of the second direction.

The body 100 may extend in a first direction and a second direction. The length in the first direction of the body 100 may be the same as or different from the length in the second direction. For example, the length of the body 100 in the first direction may be the same as the length in the second direction or longer than the length in the second direction. When the length of the body 100 in the first direction is longer than the length of the second direction, the brightness of the light emitting device 500 may be reduced by reducing the width of the second direction.

The body 100 may be a resin material or an insulating resin material. The body 100 is polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Triphenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy, epoxy molding compound (EMC: epoxy molding compound), silicone It may be formed of at least one selected from the group consisting of molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ) and the like. The body 100 may be formed of a resin material, and may include a filler of a high refractive material such as TiO ₂ and SiO ₂ therein. The body 100 may be formed of a thermoplastic resin, and the thermoplastic resin is a material which hardens when heated and is re-solidified when cooled, so that the metal parts to be described below and materials contacting the same are expanded or contracted by heat. Body 100 may act as a buffer. In addition, when the body 100 has the buffering function, it is possible to prevent the conductive parts such as solder paste, Ag paste, and SAC (Sn-Ag-Cu) paste from being damaged. In the package, a coefficient of thermal expansion (CTE) according to thermal expansion and contraction may be greater in the first direction than in the second direction. The body 100 according to the embodiment may preferably include a PCT or PPA material, the PCT or PPA material is a high melting point and a thermoplastic resin.

The body 100 may include a first body 110 and a second body 130. The second body 130 may be disposed on the first body 110. The second body 130 may be disposed around the first body 110. The second body 130 may provide a cavity 150 on an upper surface of the first body 110. The second body 130 may be formed integrally with the first body 110 or separately formed and then attached or combined. For this coupling, the first body 110 and the second body 130 may have a coupling structure such as a locking groove and / or stiffening jaw.

In other words, the first body 110 may be referred to as a lower body, and the second body 130 may be referred to as an upper body. The second body 130 may be disposed around the light emitting device 500 to reflect light emitted from the light emitting device 500 in an upward direction. An inner surface of the second body 130 formed by the cavity 150 may be inclined with respect to the upper surface of the first body 110. For example, the second body 130 may include inner surfaces IS1 and IS2 inclined in the first and second directions. The second body 130 may include a first inner side surface IS1 inclined in the first direction and a second inner side surface IS2 inclined in the second direction. The first and second inner surfaces IS1 and IS2 may correspond to each other or have different inclination angles. For example, the inclination angle of the first inner side surface IS1 with respect to the top surface of the first body 110 may be greater than the inclination angle of the second inner side surface IS2. In addition, the body 100 according to the embodiment may not include the second body 130 including the cavity 150, but may include only the first body 110 to provide a flat upper surface.

The body 100 may include a plurality of side surfaces. For example, the body 100 may include a first side surface S1, a second side surface S2, a third side surface S3, and a fourth side surface S4. In detail, the body 100 may include a first side surface S1 and a second side surface S2 facing each other in a first direction. In addition, the body 100 may include a third side surface S3 and a fourth side surface S4 facing each other in a second direction. The third side surface S3 and the fourth side surface S4 may be side surfaces connecting the first side surface S1 and the second side surface S2. For example, the third side surface S3 may be a surface connecting one end of each of the first side surface S1 and the second side surface, and the fourth side surface S4 may be the first side surface S1. And it may be a surface connecting the other end of each of the second side.

The first side surface S1 and the second side surface S2 may extend in a second direction and have a length in a second direction. The third side surface S3 and the fourth side surface S4 may extend in a first direction and have a length in a first direction. The length in the second direction of the first side surface S1 may correspond to the length in the second direction of the second side surface S2. In addition, the length in the first direction of the third side surface S3 may correspond to the length in the first direction of the fourth side surface S4. The length in the second direction of the first side surface S1 may be shorter than the length in the first direction of the third side surface S3.

The first to fourth side surfaces S1, S2, S3, and S4 may include at least one of a surface perpendicular to a bottom surface of the body 100 and an inclined surface. For example, the first side surface S1 and the second side surface S2 may be surfaces including both a surface perpendicular to the bottom surface of the body 100 and an inclined surface. In addition, the third side surface S3 and the fourth side surface S4 may be surfaces perpendicular to the bottom surface of the body 100.

The first side surface S1 may include an inclined surface having an inclination with respect to the bottom surface of the body 100 at the bottom. For example, the first side surface S1 may include a first inclined surface S11 inclined with respect to the bottom surface of the body 100 at a lower portion thereof. Here, the lower portion of the first side surface S1 may mean an area adjacent to the bottom surface of the body 100 among the first side surfaces S1. The first inclined surface S11 and the bottom surface of the body 100 may have a first inclined angle θ1. The first inclined surface S11 may be inclined in the z-axis direction at an angle of the first inclination angle from the bottom surface of the body 100 as a starting point. In detail, the first inclined surface S11 may be inclined at the first inclination angle from the first point P1 to the third point P3. Here, the first point P1 may be defined as one end of the bottom surface of the body 100 as a point where the first inclined surface S11 starts. In addition, the third point P3 is a point at which the first inclined surface S11 ends, and the inclination angle of the first side surface S1 with respect to the bottom surface of the body 100 is the first inclination angle θ1. It can be defined as the point of change to different inclination angle at. The third point P3 may be a point that is about 50% or less of the total height (based on the z-axis) of the light emitting device package 1000. When the third point P3 does not satisfy the above-described range, it may be difficult to uniformly form the metal part on the first inclined surface S11, and the amount of metal for forming the metal part may increase to manufacture the whole. The cost may increase. In addition, when the circuit board and the light emitting device package are electrically connected, the conductive part may not be uniformly formed on the metal part.

In addition, the second side surface S2 may include an inclined surface having an inclination with respect to the bottom surface of the body 100 at the bottom. For example, the second side surface S2 may include a second inclined surface S21 that is inclined with respect to the bottom surface of the body 100. Here, the lower portion of the second side surface S2 may mean an area adjacent to the bottom surface of the body 100 among the second side surfaces S2. The second inclined surface S21 and the bottom surface of the body 100 may have a second inclined angle θ2. The second inclined surface S21 may be inclined in the z-axis direction at an angle of the second inclination angle from the bottom surface of the body 100 as a starting point. In detail, the second inclined surface S21 may be inclined at the first inclination angle from the second point P2 to the fourth point P4. Here, the second point P2 may be defined as the bottom end of the bottom surface of the body 100 as a point where the second inclined surface S21 starts. In addition, the fourth point P4 is a point at which the second inclined surface S21 ends, and the inclination angle of the second side surface S2 with respect to the bottom surface of the body 100 is the second inclination angle θ2. It can be defined as the point of change to different inclination angle at. The fourth point P4 may be a point that is about 50% or less of the overall height (based on the z-axis) of the light emitting device package 1000. When the fourth point P4 does not satisfy the above-described range, it may be difficult to uniformly form the metal part on the second inclined surface S21, and the overall amount of metal for forming the metal part may be increased. The cost may increase. In addition, when the circuit board 600 and the light emitting device package 1000 are electrically connected, the conductive part may not be uniformly formed on the metal part 200.

The first inclination angle θ1 may correspond to the second inclination angle θ2. That is, the first inclined surface S11 and the second inclined surface S21 may be inclined at the same angle from the bottom surface of the body 100. The first inclination angle θ1 and the second inclination angle θ2 may exceed about 90 degrees and may be less than about 130 degrees. In detail, the inclination angles θ1 and θ2 may be greater than about 90 degrees and less than about 125 degrees. Preferably, the inclination angles θ1 and θ2 may exceed about 90 degrees and may be about 120 degrees or less. When the inclination angles θ1 and θ2 do not satisfy the above-mentioned ranges, the conductive parts 51, 53, 55, and 57 to be described later may not be sufficiently disposed between the circuit board 600 and the metal part 200. Can be. Accordingly, the coupling force between the circuit board 600 and the conductive parts 55 and 57 may be reduced, and the electrical characteristics between the light emitting device package 1000 and the circuit board 600 may be reduced. In addition, heat dissipation characteristics between the circuit board 600 and the light emitting device package 1000 may be degraded. Therefore, it is preferable that the first inclination angle θ1 and the second inclination angle θ2 satisfy the above-described ranges.

The first direction gap between the first side surface S1 and the second side surface S2 may be constant or change. For example, a first direction interval between the first side surface S1 and the second side surface S2 may be constant. For example, the surface excluding the first inclined surface S11 from the first side surface S1 and the surface excluding the second inclined surface S21 from the second side surface S2 are bottom surfaces of the body 100. It may be perpendicular to. Accordingly, the distance between the surface excluding the first inclined surface S11 from the first side surface S1 and the surface excluding the second inclined surface S21 from the second side surface S2 may be constant. In addition, the first side surface S1 may have the first inclined surface S11, and the second side surface S2 has the second inclined surface S21. The spacing between the second side surfaces S2 may vary. For example, the distance between the first inclined surface S11 and the second inclined surface S21 may vary. In detail, the first direction gap between the first inclined surface S11 and the second inclined surface S21 may increase in the vertical direction (z-axis direction) from the bottom surface of the body 100.

The body 100 may include a plurality of through holes TH1 and TH2 penetrating the upper and lower surfaces of the body 100. In detail, the first body 110 may include a plurality of through holes TH1 and TH2. For example, the first body 110 may include a first through hole TH1 and a second through hole TH2 spaced apart from the first through hole TH1. The first through hole TH1 and the second through hole TH2 may be holes penetrating the top and bottom surfaces of the first body 110. The through holes TH1 and TH2 may have at least one of a top view shape having a circular shape, an elliptic shape, a polygonal shape, an irregular shape having a straight line and a curved line.

The through holes TH1 and TH2 may be disposed under the light emitting device 500. For example, the first through hole TH1 may be disposed under the first bonding part 510, and the second through hole TH2 may be disposed under the second bonding part 520. have. One or more first through holes TH1 may be disposed under the first bonding portion of the light emitting device 500, and the second through holes TH2 are second bonded to the light emitting devices 500. It may be arranged one or more under the part. The first through hole TH1 may be disposed in an area overlapping the first bonding part 510 in a vertical direction (z-axis direction). Accordingly, the first through hole TH1 exposes the first bonding part 510 to electrically connect the at least one kind of conductive material to be filled or disposed in the first through hole TH1. And a heat dissipation path. In addition, the second through hole TH2 may be disposed in an area overlapping the second bonding part 520 in a vertical direction (z-axis direction). Accordingly, the second through hole TH2 exposes the second bonding part 520, thereby providing an electrical path through at least one kind of conductive material filled or disposed in the second through hole TH2. It can provide a heat dissipation path.

Depths of the through holes TH1 and TH2 may correspond to thicknesses of the first body 110. Depth of the through-holes (TH1, TH2) may be provided in a thickness that can maintain a stable strength of the first body (110). The through holes TH1 and TH2 may have a depth of about 180 μm to about 220 μm.

In addition, the through holes TH1 and TH2 may have a rectangular shape. However, the embodiment is not limited thereto, and may be a polygonal shape including a triangle, an ellipse shape, or a shape having curves and straight lines.

An interval between the first through hole TH1 and the second through hole TH2 on the bottom surface of the first body 110 may be about 100 μm to about 600 μm. The distance between the first through hole TH1 and the second through hole TH2 on the bottom surface of the first body 110 may be such that the light emitting device package 100 is mounted on a circuit board or a sub mount. In that case, it can be spaced in the above range to prevent electrical interference.

The width in the first direction and the width in the second direction of the first through hole TH1 may be the same or different. For example, the width of the first through hole TH1 in the first direction may be greater than the width of the second direction. In addition, the width in the first direction and the width in the second direction of the second through hole TH2 may be the same or different. For example, the width of the second through hole TH2 in the first direction may be greater than the width of the second direction. Widths in the first and second directions of the through holes TH1 and TH2 may vary depending on the sizes of the bonding parts 510 and 520.

The width or area of the through holes TH1 and TH2 may be constant from the top surface of the first body 110 toward the bottom surface. For example, the upper and lower centers of the first through hole TH1 may have the same center, and the upper and lower centers of the second through hole TH2 may be disposed at the same center. Accordingly, the distance between the top centers of the first and second through holes TH1 and TH2 may correspond to the distance between the bottom centers of the first and second through holes TH1 and TH2.

In addition, the width or area of the through holes TH1 and TH2 may change from the upper surface of the first body 110 toward the bottom surface. For example, the through holes TH1 and TH2 may be provided in an inclined form in which the width gradually increases from the upper region to the lower region. In this case, the inner surfaces of the through holes TH1 and TH2 may be perpendicular to the bottom surface of the first body 110, or may include at least one surface of an inclined surface or a curved surface. That is, the center of the upper surface and the lower surface of the first through hole TH1 may be disposed to be offset from each other. In addition, the center of the upper surface and the lower surface of the second through hole TH2 may be disposed to be offset from each other. Accordingly, the distance between the centers of the first and second through holes TH1 and TH2 may be longer as the distance from the light emitting device 500 increases. The distance between the centers of the upper surfaces of the first and second through holes TH1 and TH2 may be shorter than the distance between the centers of the lower surfaces of the first and second through holes TH1 and TH2.

The light emitting device 500 may be disposed on the first body 110. The light emitting device 500 may be disposed in the cavity 150 of the second body 130. The second body 130 may be disposed around the light emitting device 500. The light emitting device 500 may have a length in a first direction and a second direction. The length of the first direction of the light emitting device 500 may be the same as or different from the length of the second direction. For example, when the length of the first direction of the body 100 is longer than the length of the second direction, the length of the first direction of the light emitting device 500 may be longer than the length of the second direction.

The light emitting device 500 may include a substrate 501, a light emitting structure 520, a first bonding part 510, and a second bonding part 520.

The substrate 501 may be formed of an insulating material or a semiconductor material as a light transmitting layer. In addition, an uneven pattern may be formed on a surface of the substrate 124.

The light emitting structure 520 may include a compound semiconductor. For example, the light emitting structure 520 may be provided as, for example, a group 2-6 or 3-5 compound semiconductor.

The light emitting structure 520 may include a first conductive semiconductor layer 521, an active layer 522, and a second conductive semiconductor layer 523. The first conductivity-type semiconductor layer 521 and the second conductivity-type semiconductor layer 523 may be implemented as at least one of a compound semiconductor of Group 3-Group 5 or Group 2-6. In addition, the active layer 522 may be implemented with a compound semiconductor. The active layer 522 may be implemented by at least one of compound semiconductors of Groups 3-5 or 2-6, for example.

The light emitting device 500 may include one or a plurality of light emitting cells therein. The light emitting cell may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected in series with each other in one light emitting device. Accordingly, the light emitting device 500 may have one or a plurality of light emitting cells, and when n light emitting cells are disposed in one light emitting device, the light emitting device 500 may be driven at a driving voltage of n times. For example, when the driving voltage of one light emitting cell is 3V and two light emitting cells are arranged in one light emitting device, each light emitting device may be driven at a driving voltage of 6V. Alternatively, when the driving voltage of one light emitting cell is 3V and three light emitting cells are arranged in one light emitting device, each light emitting device may be driven at a driving voltage of 9V. The number of light emitting cells disposed in the light emitting device 500 may be one or two to five. The light emitting device 500 will be described in more detail with reference to FIG. 11 to be described later.

The first bonding portion 510 may be electrically connected to the first conductive semiconductor layer 521, and the second bonding portion 520 may be electrically connected to the second conductive semiconductor layer 523. have. The first bonding part 510 and the second bonding part 520 may have at least one of a top view shape having a circular shape, an elliptic shape, a polygonal shape, an atypical shape having a straight line and a curved line.

The first bonding part 510 and the second bonding part 520 may be spaced apart from each other. In detail, the first bonding part 510 may be disposed at a position corresponding to the first through hole TH1. For example, the first bonding part 510 may be disposed at a position overlapping with the first through hole TH1 in a vertical direction. The second bonding part 520 may be disposed at a position corresponding to the second through hole TH2. For example, the second bonding part 520 may be disposed at a position overlapping with the second through hole TH2 in a vertical direction.

The first bonding part 510 and the second bonding part 520 may include a conductive material. For example, the first bonding portion 510 and the second bonding portion 520 may include titanium (Ti), aluminum (Al), indium (In), iridium (Ir), tantalum (Ta), and palladium ( Pd), cobalt (Co), chromium (Cr), magnesium (Mg), zinc (Zn), nickel (Ni), silicon (Si), germanium (Ge), silver (Ag), silver alloy (Ag alloy) , Gold (Au), Hafnium (Hf), Platinum (Pt), Ruthenium (Ru), Rhodium (Rh), ZnO, IrO _x , RuO _x , NiO, RuO _x / ITO, Ni / IrO _x / Au, Ni / It may be formed in a single layer or multiple layers using one or more materials or alloys selected from the group containing IrO _x / Au / ITO. That is, the first bonding portion 510 and the second bonding portion 520 may be electrodes or pads. Accordingly, the light emitting device 500 may be driven by driving power supplied through the first bonding unit 510 and the second bonding unit 520. In addition, the light emitted from the light emitting device 500 may be extracted in an upward direction.

The length of each of the first and second bonding parts 510 and 520 in the first direction may be shorter than the length of the first direction of the light emitting device 500. In addition, the length of each of the first and second bonding parts 510 and 520 in the second direction may be shorter or the same as the length of the second direction of the light emitting device 500.

The length of the first direction of the first bonding part 510 may be equal to or longer than the width of the first direction of the first through hole TH1 disposed on the upper surface of the first body 110. The length in the second direction of the first bonding part 510 may be equal to or longer than the width in the second direction of the first through hole TH1 disposed on the upper surface of the first body 110. A lower surface area of the first bonding part 510 may be larger than an upper area of the first through hole TH1. In addition, the length of the second bonding part 520 in the first direction may be equal to or longer than the width of the first direction of the second through hole TH2 disposed on the upper surface of the first body 110. The length of the second bonding part 520 in the second direction may be equal to or longer than the width of the second through hole TH2 disposed on the upper surface of the first body 110. A lower surface area of the second bonding part 520 may be larger than an upper area of the second through hole TH2. In addition, a first direction gap between the first bonding part 510 and the second bonding part 520 is a first direction gap between the first through hole TH1 and the second through hole TH2. Can be less than Accordingly, the bonding parts 510 and 520 may be disposed on the first body 110 without being inserted into the through holes TH1 and TH2. Accordingly, the light emitting device 500 may be disposed to be spaced apart from the top surface of the first body 110, and a gap may be disposed between the light emitting device 500 and the first body 110. gap).

A predetermined gap may be provided in an area between the first body 110 and the light emitting device 500. The height of the gap may be equal to or greater than the height of each of the first and second bonding parts 510 and 520. The first resin 140 may be disposed in the gap. The first resin 140 may be disposed in an area between the first and second bonding parts 510 and 520, in an area between a bottom surface of the light emitting device 500 and an upper surface of the first body 110. Can be. In addition, the first resin 140 may be disposed in the entire bottom region of the cavity 150. That is, the first resin 140 may be disposed in an entire area of the upper surface of the first body 110 exposed by the cavity 150. The first resin 140 may attach the light emitting device 500 to the first body 110.

The first resin 140 may contact the bottom surface of the light emitting device 500 and the first body 110. The first resin 140 may contact the first and second bonding parts 510 and 520.

The first resin 140 may include a resin material such as silicon or epoxy. The first resin 140 may adhere the light emitting device 500 to the first body 110 to increase the holding force of the light emitting device 500. The first resin 140 is dispensed under the light emitting device 500 before the conductive parts 51, 53, 55, and 57 shown in FIGS. 8 and 9 are formed to form the light emitting device 500. May be attached on the first body 110. Accordingly, flow or tilt of the light emitting device 500 can be prevented. In addition, the first resin 140 may fix the light emitting device 500 to the first body 110 even when the conductive parts 51, 53, 55, and 57 are remelted.

In addition, when light is emitted to the bottom surface of the light emitting device 500, the first resin 140 may provide a light diffusion function between the light emitting device 500 and the first body 110. . Accordingly, light extraction efficiency of the light emitting device package 1000 may be improved.

In addition, the first resin 140 may include a metal oxide or a filler therein. For example, the first resin 140 may be formed of a material including a metal oxide or impurities such as TiO ₂ , SiO ₂ , and Al ₂ O ₃ . Accordingly, the first resin 140 may reflect light emitted from the light emitting device 500 in an upward direction.

The light emitting device package 1000 according to the embodiment may include a metal part 200 connected to the light emitting device 500. The metal part 200 includes copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), and silver ( Ag), and may be formed in a single layer or multiple layers. The metal part 200 may have a thickness of about 5 μm to about 100 μm. When the thickness of the metal part 200 is less than about 5 μm, the heat dissipation characteristics and the electrical conduction characteristics of the light emitting device package 1000 may be reduced. In addition, when the thickness of the metal part 200 exceeds about 100 μm, the improvement of thermal conductivity or the improvement of electrical conductivity may be insignificant and the manufacturing cost may increase.

The metal part 200 may be formed on the surface of the body 100 through a deposition process, a plating process, a lamination process or an injection molding process.

The metal part 200 may extend from the lower surface of the body 100 to the through holes TH1 and TH2, and may extend from the lower surface of the body 100 to a partial region of the side surface of the body 100. .

The metal part 200 may include a first metal part 210 and a second metal part 220 spaced apart from each other. The metal part 200 includes a first metal part 210 electrically connected to the first bonding part 510 and a second metal part 220 electrically connected to the second bonding part 520. can do.

The first metal part 210 may include at least one side surface of the side surfaces S1, S2, S3, and S4 of the body 100, a bottom surface of the body 100, and the first through hole TH1. It may be disposed on at least one of the inner side of the.

The first metal part 210 may include a first inner extension part 211 disposed in the first through hole TH1, a first connection part 213 disposed on a bottom surface of the body 100, and the body. It may include a first outer extension 215 disposed on the side of the (100). The first connector 213 may be disposed between the first inner extension 211 and the first outer extension 215. The first connection part 213 may connect the first inner extension part 211 and the first outer extension part 215.

The first inner extension part 211 may extend from the lower surface of the body 100 into the first through hole TH1. The first inner extension part 211 may be disposed on an inner side surface of the first through hole TH1. For example, the first inner extension part 211 may be disposed on a partial area or an entire area of the inner surface of the first through hole TH1. Preferably, the first inner extension part 211 may be disposed on the entire inner surface of the first through hole TH1. The first inner extension part 211 may directly contact an inner surface of the first through hole TH1. The length in the third direction of the first inner extension part 211 may correspond to the depth of the first through hole TH1.

The first connection part 213 may be connected to the first inner extension part 211. For example, the first connection part 213 may be connected to an end of the first inner extension part 211 and extend in a first direction. The first connection portion 213 may be disposed on the bottom surface of the body 100. For example, the first connector 213 may be disposed on a partial area or a whole area of the bottom surface of the first body 110. Preferably, the first connecting portion 213 may be disposed on the entire bottom surface of the first body 110. The first connector 213 may directly contact the bottom surface of the first body 110.

The first outer extension part 215 may be connected to the first connection part 213. For example, the first outer extension part 215 may be connected to an end of the first connection part 213 and extend in a third direction. The first outer extension 215 may be disposed on the first side surface S1 of the body 100. The first outer extension 215 may be disposed on a portion of the first side surface S1 of the body 100. In detail, the first outer extension part 215 may be disposed on the first inclined surface S11 of the body 100. The first outer extension part 215 may be disposed on a partial area or the entire area of the first inclined surface S11. The first outer extension part 215 may directly contact the first inclined surface S11.

The first outer extension 215 may extend to the third point P3. The third point P3 may be a point that is about 50% or less of the total height (based on the z-axis) of the light emitting device package 1000. That is, the first outer extension portion 215 may extend from the first connection portion 213 to a height of about 50% or less of the light emitting device package 1000. In addition, the first outer extension part 215 may extend to a position of about 50% or less of the height (based on the z axis) of the light emitting device 500.

The first outer extension 215 may be disposed to be inclined with respect to the bottom surface of the first body 110. The first outer extension part 215 may be inclined with respect to the first connection part 213. For example, the first outer extension part 215 and the first connection part 213 may have a third inclination angle θ3.

The third inclination angle θ3 may be greater than about 90 degrees and less than about 125 degrees. Preferably, the third inclination angle θ3 may exceed about 90 degrees and may be about 120 degrees or less. When the third inclination angle θ3 does not satisfy the above-described range, the third conductive portion 55 to be described later may not be sufficiently disposed on the first outer extension portion 215. In detail, when the light emitting device package 1000 is connected to the circuit board 600, a third conductive part 55 may be disposed between the circuit board 600 and the light emitting device package 1000. When the third inclination angle does not satisfy the above-described range, the third conductive part 55 may not be sufficiently disposed between the circuit board 600 and the first metal part 210. Accordingly, the physical coupling force and the electrical conduction property between the circuit board 600 and the first metal part 210 may be reduced. In addition, heat dissipation between the light emitting device package 1000 and the circuit board 600 may be degraded. Therefore, it may be preferable that the third inclination angle θ3 satisfies the above-described range.

The third inclination angle θ3 may correspond to the first inclination angle θ1. In detail, the first connection part 213 is in direct contact with the bottom surface of the first body 110, and the first outer extension part 215 is in direct contact with the first inclined surface S11. The third inclination angle θ3 may correspond to the first inclination angle θ1. The third inclination angle θ3 may be changed by the first inclination angle θ1. For example, when the first inclination angle θ1 increases, the third inclination angle θ3 may increase, and when the first inclination angle θ1 decreases, the third inclination angle θ3 may also decrease.

The first outer extension 215 can include a first end 217. The first end 217 may be disposed on the same plane as the first side surface S1 of the body 100 on the first inclined surface S11. The thickness of the first outer extension 215 may vary. For example, the thickness of the first end 217 in the first outer extension 215 may vary. The thickness of the first end 217 may be larger in the upper region than in the lower region. The upper region may be an area adjacent to the third point P3 and may mean an area adjacent to the end of the first metal part 210. In addition, the lower region may be an area adjacent to the first body 110 and may mean an area adjacent to the first point P1.

That is, the thickness of the first outer extension part 215 may become smaller toward the third direction (z-axis). Accordingly, as shown in FIGS. 4, 6, and 7, the first end 217 may be disposed on the same plane as the first side surface S1. In detail, one surface of the first end 217 may be disposed on the same plane as the first side surface S1. One surface of the first end 217 may be perpendicular to the bottom surface of the body 100. In addition, the first end 217 may be located above the bottom of the cavity 150 in the third direction (z-axis). The first end 217 may be located above the upper surface of the first body 110 in a vertical direction. Accordingly, the reliability of the first metal part 210 may be improved. In detail, since the first end 217 is disposed on the same plane as the first side S1 of the body 100, the first end 217 may not protrude to the side of the body 100. Accordingly, the first metal part 210 may be prevented from being damaged by an external impact, etc., and the first metal part 210 may be firmly coupled to the body 100.

The second metal part 210 may include at least one side surface of the side surfaces S1, S2, S3, and S4 of the body 100, a bottom surface of the body 100, and the second through hole TH1. It may be disposed on at least one of the inner side of the.

The second metal part 220 may include a second inner extension part 221 disposed in the second through hole TH2, a second connection part 223 disposed on the bottom surface of the body 100, and the body. It may include a second outer extension 225 disposed on the side of the (100). The second connecting portion 223 may be disposed between the second inner extension 221 and the second outer extension 225. The second connection part 223 may connect the second inner extension part 221 and the second outer extension part 225.

The second inner extension part 221 may extend into the second through hole TH2 from the bottom surface of the body 100. The second inner extension part 221 may be disposed on an inner side surface of the second through hole TH2. For example, the second inner extension part 221 may be disposed on a partial area or the entire area of the inner surface of the second through hole TH2. Preferably, the second inner extension part 221 may be disposed on the entire inner surface of the second through hole TH2. The second inner extension part 221 may directly contact the inner surface of the second through hole TH2. The length in the third direction of the second inner extension part 221 may correspond to the depth of the second through hole TH2.

The second connection part 223 may be connected to the second inner extension part 221. For example, the second connection part 223 may be connected to the end of the second inner extension part 221 and extend in the first direction. The second connection part 223 may be disposed on the bottom surface of the body 100. For example, the second connection part 223 may be disposed on a partial area or an entire area of the bottom surface of the first body 110. Preferably, the second connecting portion 223 may be disposed on the entire bottom surface of the first body 110. The second connection part 223 may directly contact the bottom surface of the first body 110.

The second outer extension 225 may be connected to the second connector 223. For example, the second outer extension part 225 may be connected to the end of the second connection part 223 and extend in the third direction. The second outer extension 225 may be disposed on the second side surface S2 of the body 100. The second outer extension 225 may be disposed on a portion of the second side surface S2 of the body 100. In detail, the second outer extension part 225 may be disposed on the second inclined surface S21 of the body 100. The second outer extension part 225 may be disposed on a partial region or the entire region of the second inclined surface S21. The second outer extension 225 may directly contact the second inclined surface S21.

The second outer extension 225 may extend to the fourth point P4. The fourth point P4 may be a point that is about 50% or less of the overall height (based on the z-axis) of the light emitting device package 1000. That is, the second outer extension part 225 may extend from the second connection part 223 to a height of about 50% or less of the light emitting device package 1000. In addition, the second outer extension 225 may extend to a position of about 50% or less of the height (based on the z-axis) of the light emitting device 500.

The second outer extension 225 may be disposed to be inclined with respect to the bottom surface of the first body 110. The second outer extension part 225 may be disposed to be inclined with respect to the second connection part 223. For example, the second outer extension part 225 and the second connection part 223 may have a fourth inclination angle θ4.

The fourth inclination angle θ4 may be greater than about 90 degrees and less than about 125 degrees. Preferably, the fourth inclination angle θ4 may exceed about 90 degrees and may be about 120 degrees or less. When the fourth inclination angle θ4 does not satisfy the above-described range, the fourth conductive portion 57 to be described later may not be sufficiently disposed on the second outer extension portion 225. In detail, when the light emitting device package 1000 is connected to the circuit board 600, a fourth conductive portion 57 may be disposed between the circuit board 600 and the light emitting device package 1000. When the fourth inclination angle does not satisfy the above-described range, the fourth conductive portion 57 may not be sufficiently disposed between the circuit board 600 and the second metal portion 220. Accordingly, the physical coupling force and the electrical conduction property between the circuit board 600 and the second metal part 220 may be reduced. In addition, heat dissipation between the light emitting device package 1000 and the circuit board 600 may be degraded. Therefore, it may be preferable that the fourth inclination angle θ4 satisfies the above-described range.

The fourth inclination angle θ4 may correspond to the second inclination angle θ2. In detail, the second connection part 223 is in direct contact with the bottom surface of the first body 110, and the second outer extension part 225 is in direct contact with the second inclined surface S21. Four inclination angles θ4 may correspond to the second inclination angles θ2. The fourth inclination angle θ4 may be changed by the second inclination angle θ2. For example, when the second inclination angle θ2 increases, the fourth inclination angle θ4 may also increase, and when the second inclination angle θ2 decreases, the fourth inclination angle θ4 may also decrease.

In addition, the fourth inclination angle θ4 may correspond to the third inclination angle θ3. Accordingly, the first metal part 210 and the second metal part 220 may have symmetrical shapes with respect to the bottom surface of the body 100.

The second outer extension 225 can include a second end 227. The second end 227 may be disposed on the same plane as the second side surface S2 of the body 100 on the second inclined surface S21. The thickness of the second outer extension 225 may vary. For example, the thickness of the second end 227 in the second outer extension 225 may vary. The thickness of the second end 227 may be larger in the upper region than in the lower region. The upper region may be an area adjacent to the fourth point P4 and may mean an area adjacent to the end of the second metal part 220. In addition, the lower region may be an area adjacent to the first body 110 and an area adjacent to the second point P2.

That is, the thickness of the second outer extension part 225 may become smaller toward the third direction (z-axis). Accordingly, as shown in FIGS. 4, 6, and 7, the second end 227 may be disposed on the same plane as the second side surface S2. In detail, one surface of the second end 227 may be disposed on the same plane as the second side surface S2. One surface of the second end 227 may be perpendicular to the bottom surface of the body 100. In addition, one surface of the second end 227 may be parallel to one surface of the first end 217. The thickness of the second end 227 may correspond to the thickness of the first end 217. In addition, the second end 227 may be located above the bottom of the cavity 150 in the third direction (z-axis). The second end 227 may be located above the upper surface of the first body 110 in a vertical direction. Accordingly, the reliability of the second metal part 220 may be improved. In detail, since the second end 227 is disposed on the same plane as the second side surface S2 of the body 100, the second end portion 227 may not protrude to the side surface of the body 100. Accordingly, the second metal part 220 may be prevented from being damaged by an external impact, and the like, and the second metal part 220 may be firmly coupled to the body 100.

A first direction gap between the first and second inner extension parts 211 and 221 may be smaller than a distance between the centers of the first and second through holes TH1 and TH2. In addition, a first direction gap between the first and second connection parts 213 and 223 may be smaller than a distance between the centers of the first and second through holes TH1 and TH2. For example, a first distance between the first and second connection parts 213 and 223 may be smaller than a distance between the centers of the upper surfaces of the first and second through holes TH1 and TH2. A first direction gap between the first and second connection parts 213 and 223 may be smaller than a distance between the centers of lower surfaces of the first and second through holes TH1 and TH2. In addition, the first direction spacing of the first and second outer extensions 215 and 225 may vary. For example, the first direction spacing of the first and second outer extensions 215 and 225 may increase as the distance from the bottom surface of the body 100 is increased.

The light emitting device package 1000 according to the embodiment may include a molding part 300. The molding part 300 may be provided on the light emitting device 500. The molding part 300 may be disposed on the first body 110 and the second body 130. The molding part 300 may be disposed in the cavity 150 provided by the body 100. The molding part 300 may be disposed to surround the light emitting device 500.

The molding part 300 may include an insulating material. In addition, the molding part 300 may include wavelength conversion means for receiving the light emitted from the light emitting device 500 and providing the wavelength-converted light. For example, the molding part 300 may be at least one selected from the group including phosphors, quantum dots, and the like. The light emitting device 500 may emit light of yellow, blue, green, red, white, infrared or ultraviolet light. The phosphor or quantum dot may emit light of blue, green, and red. The molding part 300 may not be formed.

The phosphor disposed inside or below the molding part 300 may include a phosphor of a fluoride compound, and may include, for example, at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. The phosphor may emit light of different peak wavelengths, and the light emitted from the light emitting device may emit light of different yellow and red colors or different red peak wavelengths. One kind of the phosphor may include a red phosphor. The red phosphor may have a wavelength range of 610 nm to 650 nm, and the wavelength may have a half width of less than 10 nm. The red phosphor may include a fluoride phosphor. The fluorite-based phosphor includes at least one of KSF-based red K2SiF6: Mn ⁴⁺ , K2TiF ₆ : Mn ⁴⁺ , NaYF ₄ : Mn ⁴⁺ , NaGdF ₄ : Mn ⁴⁺ , K ₃ SiF =: Mn ⁴⁺ can do. The KSF-based phosphor, for example, may have a composition formula of KaSi1-cFb: Mn ⁴⁺ c, where a is 1 ≦ a ≦ 2.5, b is 5 ≦ b ≦ 6.5, and c is 0.001 ≦ c ≦ 0.1 have. In addition, the fluorite-based red phosphor may further include an organic coating on the surface of the fluoride or Mn-containing fluoride or the surface of the fluoride coating does not contain Mn in order to improve the reliability at high temperature / high humidity. Unlike the other phosphors, the above-described fluerite-based red phosphor may implement a narrow width of 10 nm or less, and thus may be utilized in a high resolution device.

The phosphor composition according to the embodiment should basically conform to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr may be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y may be substituted with Tb, Lu, Sc, Gd, etc. of the lanthanide series. In addition, the active agent Eu, etc. may be substituted by Ce, Tb, Pr, Er, Yb, etc. according to a desired energy level, and an active agent alone or a deactivator may be additionally applied to modify properties.

The quantum dot phosphor may include a II-VI compound or a III-V compound semiconductor, and may emit red light. The quantum dots are, for example, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In, Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS ₂ , Such as CuInSe ₂ and the like, and combinations thereof.

7 is a cross-sectional view illustrating an example in which a recess is disposed in a body as a modification of the light emitting device package of FIG. 5.

Referring to FIG. 7, a concave first recess R1 may be disposed on the body 100 of the light emitting device package 100. The first recess R1 may be concave in a bottom surface direction from an upper surface of the first body 110. The first recess R1 may be disposed between the first through hole TH1 and the second through hole TH2. The first recess R1 may be disposed between the first bonding portion 510 and the second bonding portion 520.

The first recess R1 may be disposed under the light emitting device 500. The entire area of the first recess R1 may be disposed to overlap the light emitting device 500 in the vertical direction (z-axis). In addition, a portion of the first recess R1 may be disposed to overlap the light emitting device 500 in the vertical direction.

The width and depth of the first recess R1 may be provided in several tens of micrometers. For example, the width and depth of the first recess R1 may be provided in a range of about 20 μm to about 40 μm.

The first recess R1 may serve as an alignment key. For example, while the light emitting device 500 is attached to the body 100, the first recess R1 may provide an alignment position of the light emitting device 500.

In addition, the first resin 140 may be provided in the first recess R1. After the first resin 140 is provided to the first recess R1, the light emitting device 500 is attached onto the body 100, thereby providing a position and an appropriate supply amount of the first resin 140. Can be controlled easily. The first recess R1 may provide an appropriate space in which a kind of underfill process may be performed under the light emitting device 500. The first recess R1 may provide a space in which the first resin 140 may be sufficiently supplied between the bottom surface of the light emitting device 500 and the top surface of the first body 110. Accordingly, the adhesion reliability between the light emitting device 500 and the body 100 may be improved.

8 and 9 are front and rear views illustrating an example of a module in which a light emitting device package according to an embodiment is disposed on a circuit board.

8 and 9, the light emitting device package according to the embodiment may be a side view light emitting device package. In the light source module, one or a plurality of light emitting device packages 1000 may be disposed on the circuit board 600 in a side view manner.

The circuit board 600 may include a substrate member including first and second pads 611 and 613. The circuit board 600 may be provided with a power supply circuit for controlling the driving of the light emitting device 500.

The light emitting device package 1000 may be disposed on the circuit board 600. For example, the light emitting device package 1000 may be disposed such that the third side surface S3 or the fourth side surface S4 of the body 100 faces the upper surface of the circuit board 600.

The circuit board 600 may be a printed circuit board (PCB). The circuit board 501 may include at least one of a resin PCB, a metal core PCB (MCPCB), a flexible PCB (FPCB) and a rigid PCB. In the circuit board 501, an insulating layer or a protective layer is disposed on a resin or metal base layer, and pads 611 and 613 exposed from the insulating layer or the protective layer are disposed. The pads 611 and 613 may electrically connect one or a plurality of light emitting device packages 1000. The insulating layer or the protective layer may be a solder resist material or a resin material.

The pads 611 and 613 include at least one material selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, Al, or an alloy thereof. can do.

The pads 611 and 613 may include a first pad 611 and a second pad 613 spaced apart from each other. The first pad 611 may be disposed in an area corresponding to the first metal part 210. For example, the first pad 611 may be disposed in an area overlapping with the first metal part 210 in the vertical direction. In detail, the first pad 611 may be disposed in an area overlapping with at least one of the first connection part 213 and the first outer extension part 215 in a vertical direction. In addition, the second pad 613 may be disposed in an area corresponding to the second metal part 220. For example, the second pad 613 may be disposed in an area overlapping with the second metal part 220 in the vertical direction. In detail, the second pad 613 may be disposed in an area overlapping with at least one of the second connection part 223 and the second outer extension part 225 in the vertical direction.

The first pad 611 may be electrically connected to the first bonding part 510, and the second pad 613 may be electrically connected to the second bonding part 520.

For example, conductive parts 51 and 53 may be disposed in the first through hole TH1 and the second through hole TH2. In detail, a first conductive portion 51 may be disposed in the first through hole TH1, and a second conductive portion 53 may be disposed in the second through hole TH2. The first conductive part 51 may fill the inside of the first through hole TH1. The second conductive portion 53 may fill the inside of the second through hole TH2. The first conductive part 51 and the second conductive part 53 may provide an electrical path and a heat dissipation path between the light emitting device 500 and the metal parts 210 and 220.

The first conductive part 51 may contact the first bonding part 510. The first conductive part 51 may contact the first metal part 210. The first conductive part 51 may directly contact the first inner extension part 211. The first conductive part 51 may connect the first bonding part 510 and the first metal part 210 of the light emitting device 500. The second conductive portion 53 may contact the second bonding portion 520. The second conductive part 53 may contact the second metal part 220. The second conductive part 53 may directly contact the second inner extension part 221. The second conductive part 53 may connect the second bonding part 520 and the second metal part 220 of the light emitting device 500.

Conductive units 55 and 57 may be disposed between the light emitting device package 1000 and the circuit board 600. A third conductive part 55 is disposed on the first metal part 210 and the first pad 611, and a fourth conductive part (ie) is disposed on the second metal part 220 and the second pad 613. 57 may be arranged.

The third conductive part 55 may contact the first metal part 210. The third conductive part 55 may contact the first pad 611. The third conductive part 55 may directly contact the first pad 611, and may include at least one of the first connection part 213 and the first outer extension part 215 of the first metal part 210. Can be in direct contact with one. The third conductive part 55 may connect the first metal part 210 and the first pad 611 of the light emitting device 500.

The fourth conductive portion 57 may contact the second metal portion 220. The fourth conductive portion 57 may contact the second pad 613. The fourth conductive portion 57 may directly contact the second pad 613, and may include at least one of the second connection portion 223 and the second outer extension portion 225 of the second metal portion 220. Can be in direct contact with one. The fourth conductive part 57 may connect the second metal part 220 and the second pad 613 of the light emitting device 500.

The first bonding part 510 of the light emitting device 500 is the circuit board by at least one selected from the first conductive part 51, the first metal part 210, and the third conductive part 55. It may be connected to the first pad 611 of the 600. In addition, the second bonding part 520 may be formed of at least one of the second conductive part 53, the first metal part 210, and the fourth conductive part 57. 2 may be connected to the pad 613.

The conductive parts 51, 53, 55, and 57 are made of a liquid material and are positioned on the first pad 611 and the second pad 613 of the circuit board 600, and then the circuit board 600. It combines the light emitting device 500 arranged on the. For example, the first conductive part 51 and the second conductive part 53 may be injected into the through holes TH1 and TH2. In detail, the first conductive part 51 may be injected into the first through hole TH1, and the second conductive part 53 may be injected into the second through hole TH2.

The third conductive part 55 may be disposed on the first pad 611. The third conductive portion may be disposed on the first metal portion 210. The third conductive part 55 may be disposed on the first outer extension part 215. In addition, the third conductive part 55 may be disposed on a portion of the first outer extension part 215 and the first connection part 213. The third conductive part 55 may connect the first pad and the first metal part 210. The third conductive part 55 may be easily supplied between the first metal part 210 and the first pad by the first metal part 210 including an inclined surface. In detail, the first metal part 210 includes a first outer extension part 215 disposed on a first inclined surface S11, and the first outer extension part 215 includes the third inclination angle θ3. Can have That is, as the first outer extension part 215 has a predetermined inclination angle, the third conductive part 55 supplied on the first pad 611 is easy onto the first outer extension part 215. Can be supplied.

In addition, the fourth conductive portion 57 may be disposed on the second pad 613. The fourth conductive portion may be disposed on the second metal portion 220. The fourth conductive portion 57 may be disposed on the second outer extension portion 225. In addition, the fourth conductive portion 57 may be disposed on a portion of the second outer extension portion 225 and the second connection portion 223. The fourth conductive portion 57 may connect the second pad and the second metal portion 220. The fourth conductive portion 57 may be easily supplied between the second metal portion 220 and the second pad by the second metal portion 220 including the inclined surface. In detail, the second metal part 220 includes a second outer extension part 225 disposed on the second inclined surface S21, and the second outer extension part 225 includes the fourth inclination angle θ4. Can have That is, as the second outer extension part 225 has a predetermined inclination angle, the fourth conductive part 57 supplied on the second pad 613 is easy onto the second outer extension part 225. Can be supplied.

The conductive parts 51, 53, 55, 57 may be supplied at the same time. For example, a third layer is provided on the first and second pads 611 and 613 while supplying the first and second conductive parts 51 and 53 to the first and second through holes TH1 and TH2. And fourth conductive parts 55 and 57. Accordingly, the first and second bonding parts 510 and 520 may be connected to the first and second metal parts 210 and 220, and the first and second metal parts 210 and 220 may be connected to the first and second metal parts 210 and 220. It may be connected to the first and second pads 611 and 613.

Accordingly, it is possible to reduce the amount of conductive parts required and to reduce the manufacturing time, thereby improving process efficiency. In addition, electrical characteristics between the light emitting device package 1000 and the circuit board 600 may be improved. In detail, the conductive parts 55 and 57 may be easily supplied to the metal part 200 through the inclined surface of the metal part. Therefore, the bonding force and electrical characteristics between the light emitting device package 1000 and the circuit board 600 may be improved, and an improved heat dissipation path may be provided, thereby improving heat dissipation efficiency.

10 is a view illustrating a part of a manufacturing method of a light emitting device package according to an embodiment.

Referring to FIG. 10, a plurality of light emitting device packages 1000 may be manufactured at a time.

The body 100 according to the embodiment may include the through holes TH1 and TH2 and the cavity 150. The body 100 may be formed through injection molding. The body 100 may be injection molded so that the plurality of bodies 100 are connected to each other. The body 100 is easy to injection molding polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Tri phenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy, epoxy molding compound (EMC: Epoxy and at least one selected from the group consisting of a molding compound, a silicon molding compound (SMC), a ceramic, a photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like.

The body 100 may be integrally formed with the first body 110 and the second body 130 by injection molding. In addition, the body 100 may be formed by attaching or combining the first body 110 and the second body 130 after injection molding separately. In addition, the body 100 may be manufactured to have the above-described first inclined surface (S11) and the second inclined surface (S21).

The light emitting device 500 may be disposed in the cavity 150. In detail, the light emitting device 500 may be disposed on the first body 110. A first resin 140 may be disposed between the light emitting device 500 and the body 100, and the light emitting device 500 may be attached to the body 100 by the first resin 140. Can be.

The metal part 200 may be disposed on the surface of the body 100. For example, the metal part 200 may be disposed in at least one of the through holes TH1 and TH2, the bottom surface of the body 100, and the inclined surface of the body 100. The metal part 200 includes copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), and silver ( Ag). The metal part 200 may be formed in a single layer or multiple layers on the surface of the body 100. For example, the metal part 200 may be formed on the surface of the body 100 through a deposition process, a plating process, a lamination process or an injection molding process. Preferably, the metal part 200 may be formed on the surface of the body 100 through a plating process.

Subsequently, as illustrated in FIG. 10, the light emitting device package 1000 may be cut along a cutting line C / L. The cutting may be a mechanical sawing process using a saw or the like or a scribing process using a laser. The metal part 200 may include an end portion disposed on the same plane as the side surface of the body 100 by the cutting. In addition, during the cutting process, a part of the metal part 200 may be cut to form a first metal part 210 and a second metal part 220 spaced apart from each other. Accordingly, a portion of the bottom surface of the body 100 may be exposed. In addition, a portion of the bottom surface of the exposed body 100 may have a concave shape by a process of cutting the metal part 200. For example, as shown in FIGS. 6 and 7, a portion of the bottom surface may have a concave shape in an upward direction from the bottom surface of the first body 110.

According to the embodiment, the plurality of light emitting device packages 1000 may be manufactured at a time. In detail, the body 100 may be manufactured by injection molding so that the plurality of bodies 100 are connected to each other in the first direction, and the light emitting device and the metal part may be formed on the body to manufacture the plurality of light emitting device packages 1000. Subsequently, each light emitting device package may be manufactured by cutting along a cutting line.

In addition, although not shown in the drawings, the body may be manufactured by injection molding so that the plurality of bodies 100 are connected to each other in a second direction. Alternatively, the body may be manufactured by injection molding so that the plurality of bodies 100 are connected to each other in the first and second directions.

Accordingly, manufacturing time and manufacturing cost of the light emitting device package 1000 may be reduced, thereby improving process efficiency. In addition, it is possible to form a metal inclined on the side of the body 100 having an inclined surface, it is possible to improve the bonding force, electrical characteristics and heat dissipation characteristics with the circuit board 600 through the metal portion. In addition, as the metal part 200 is disposed on the same plane without protruding from the side surface of the body 100, the metal part 200 may be prevented from being damaged by physical impact. Accordingly, the reliability of the metal part may be improved, and the overall reliability of the light emitting device package 1000 may be improved.

11 is a side cross-sectional view showing an example of a light emitting device according to the embodiment.

11 is a cross-sectional view showing an example of a light emitting device applied to the light emitting device package according to the embodiment of the present invention.

Referring to FIG. 11, the light emitting device 500 conceptually illustrates only a relative arrangement relationship between the first electrode 550 and the second electrode 570. The first electrode 550 may include a first bonding part 551 and a first branch electrode 553. The second electrode 570 may include a second bonding part 571 and a second branch electrode 573. The first bonding part 551 may correspond to the first bonding part 510 described above, and the second bonding part 571 may correspond to the second bonding part 520 described above.

The light emitting device 500 may include a light emitting structure 520 disposed on the substrate 501. The substrate 501 may be formed of an insulating material or a semiconductor material as a light transmitting layer. The substrate 501 may be selected from a group including sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge. For example, the substrate 501 may be provided as a patterned sapphire substrate (PSS) having an uneven pattern formed on an upper surface thereof.

The light emitting structure 520 may include a compound semiconductor. The light emitting structure 520 may be provided as, for example, a Group 2-6 or Group 3-5 compound semiconductor. For example, the light emitting structure 520 may include at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). Can be provided.

The light emitting structure 520 may include a first conductive semiconductor layer 521, an active layer 522, and a second conductive semiconductor layer 523. The active layer 522 may be disposed between the first conductive semiconductor layer 521 and the second conductive semiconductor layer 523. For example, the active layer 522 may be disposed on the first conductive semiconductor layer 521, and the second conductive semiconductor layer 523 may be disposed on the active layer 522.

The first conductivity-type semiconductor layer 521 and the second conductivity-type semiconductor layer 523 may be implemented as at least one of a compound semiconductor of Group 3-Group 5 or Group 2-6. The first and second conductivity-type semiconductor layers may include, for example, a composition formula of In _x Al _y Ga _1-xy N (0 ≦≦ _x ≦≦ ₁ , 0 ≦≦ _y ≦≦ ₁ , 0 ≦≦ x + y ≦≦ 1). It can be formed of a semiconductor material having a. For example, the first and second conductivity type semiconductor layers 521 and 523 may include at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. It may include. The first conductive semiconductor layer 521 may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductive semiconductor layer 523 may be a p-type semiconductor layer doped with p-type dopants such as Mg, Zn, Ca, Sr, and Ba. Alternatively, the first conductivity type semiconductor layer 521 may be provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 523 may be provided as an n-type semiconductor layer.

The active layer may be implemented with a compound semiconductor. The active layer may be implemented as at least one of a compound semiconductor of Group 3-Group 5 or Group 2-6, for example. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers that are alternately arranged, and In _x Al _y Ga _1-xy N (0 ≦≦ _x ≦≦ ₁ , 0 ≦≦ y ≦≦ 1, 0 ≦≦ x + y ≦≦ 1). For example, the active layer is selected from the group comprising InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, InP / GaAs. It may include at least one.

The first electrode 550 may be electrically connected to the second conductivity type semiconductor layer 523. The first branch electrode 553 may be branched from the first bonding part 510. The first branch electrode 553 may include a plurality of branch electrodes branched from the first bonding part 510. The second electrode 570 may include a second bonding part 520 and a second branch electrode 573. The second electrode 570 may be electrically connected to the first conductivity type semiconductor layer 521. The second branch electrode 573 may be branched from the second bonding part 520. The second branch electrode 573 may include a plurality of branch electrodes branched from the second bonding part 520.

The first branch electrode 553 and the second branch electrode 573 may be alternately arranged in a finger shape. Power supplied through the first bonding portion 551 and the second bonding portion 571 by the first branch electrode 553 and the second branch electrode 573 to the entire light emitting structure 520. It can be spread and provided.

The first electrode 550 and the second electrode 570 may be formed in a single layer or a multilayer structure. For example, the first electrode 550 and the second electrode 570 may be ohmic electrodes. For example, the first electrode 550 and the second electrode 570 are ZnO, IrO _x , RuO _x , NiO, RuO _x / ITO, Ni / IrO _x / Au, and Ni / IrO _x / Au / It may be an alloy of at least one of ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf or two or more of these materials.

Meanwhile, a protective layer may be further provided on the light emitting structure 520. The protective layer may be provided on an upper surface of the light emitting structure 520. In addition, the protective layer may be provided on the side surface of the light emitting structure 520. The protective layer may be provided to expose the first bonding portion 551 and the second bonding portion 571. In addition, the protective layer may be selectively provided on the circumference and the lower surface of the substrate 501. For example, the protective layer may be provided as an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , It may be formed of at least one material selected from the group containing Si _x N _y , Al _x O _y .

In the light emitting device 500 according to the embodiment, the light generated by the active layer 522 may emit light in six surface directions of the light emitting device. Light generated by the active layer 522 may be emitted in six surface directions through the top, bottom, and four side surfaces of the light emitting device.

The light emitting device 500 has been described as having a light emitting cell. When the light emitting cell includes the light emitting structure, the driving voltage of the light emitting device may be a voltage applied to one light emitting cell. As an example of the light emitting device 500 according to the embodiment, it may include a light emitting device having two or three or more light emitting cells. Accordingly, a high voltage light emitting device package can be provided.

Meanwhile, the light emitting device package 1000 according to the embodiment of the present invention described above may be mounted and supplied to a sub-mount or a circuit board. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high temperature process such as a reflow may be applied. At this time, in the reflow process, a re-melting phenomenon may occur in the bonding region between the body 100 and the light emitting device 500 provided in the light emitting device package, thereby reducing the stability of the electrical connection and the physical coupling. Accordingly, the position of the light emitting device 500 may be changed, so that the optical, electrical characteristics, and reliability of the light emitting device package 1000 may be degraded. However, according to the light emitting device package 1000 according to the embodiment of the present invention, driving power may be provided through the conductive layer disposed in the body portion and / or the through hole. In addition, the melting point of the conductive layer disposed in the through hole may have a higher value than the melting point of the general bonding material. Therefore, the light emitting device package 1000 according to the embodiment does not cause re-melting even when bonded to a main substrate through a reflow process, so that electrical connection and physical bonding force are not degraded. There is an advantage.

In addition, according to the light emitting device package 1000 and the light emitting device package manufacturing method according to the embodiment, the body 100 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment of the present invention, it is possible to prevent the body 100 from being exposed to high temperature to cause damage such as discoloration and deformation. Accordingly, the selection range for the material constituting the body 100 can be widened.

In addition, the metal parts 210 and 220 may provide a heat dissipation path as they have a structure disposed on the bottom and side surfaces of the body 100. Accordingly, heat emitted from the light emitting device 500 may be effectively discharged to the outside of the package, thereby improving reliability of the light emitting device package 1000.

In addition, the electrical characteristics between the light emitting device package 1000 and the circuit board 600 may be improved. In detail, the conductive part may be smoothly supplied between the light emitting device package 1000 and the circuit board 600. That is, the body 100 of the light emitting device package 1000 may include a side surface including an inclined surface, and a metal part may be disposed on the inclined surface. In this case, the metal part may be disposed to have a predetermined inclination angle with respect to the bottom surface of the body 100, and the conductive part 55, 57 between the light emitting device package 1000 and the circuit board 600 by the inclination angle. ) Can be supplied smoothly. Accordingly, the physical coupling force and the electrical characteristics between the light emitting device package 1000 and the circuit board 600 may be improved, and heat emitted from the light emitting device 500 may be transferred to the metal part 200 and the conductive part. (51, 53, 55, 57) can be effectively discharged to the outside.

In addition, the metal part of the light emitting device package 1000 according to the embodiment may include an end portion disposed on the same plane as the side surface of the body (100). In detail, the metal part 200 may be disposed on the same plane without protruding from the side surface of the body 100. Accordingly, the metal part 200 may be prevented from being damaged by an external physical shock, etc., thereby improving reliability of the light emitting device package 1000.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (10)

A body including first and second through holes penetrating the upper and lower surfaces;
A light emitting device including first and second bonding parts disposed on the first and second through holes, respectively; And
Disposed on the bottom surface of the body and including first and second metal parts spaced apart from each other,
The first metal part may include a first inner extension part extending from the lower surface of the body into the first through hole and a first outer extension part disposed at a portion of the first side surface of the body.
The second metal part may include a second inner extension part extending from the lower surface of the body into the second through hole and a second outer extension part disposed on a portion of the second side surface of the body.
The first side of the body includes a first inclined surface disposed below the first outer extension,
The second side of the body facing the first side includes a second inclined surface disposed below the second outer extension,
The gap between the first and the second inclined surface, the light emitting device package changes in the vertical direction from the lower surface of the body. The method of claim 1,
The gap between the first and second inclined surfaces, the light emitting device package increases in the vertical direction from the lower surface of the body. The method of claim 2,
A lower surface of the first inclined surface and the body has a first inclined angle,
The lower surface of the second inclined surface and the body has a second inclined angle,
The first and second inclination angles are greater than 90 degrees and less than 130 degrees light emitting device package. The method of claim 1,
The first outer extension includes a first end disposed on the same plane as the first side surface,
The second outer extension portion, the light emitting device package including a second end disposed on the same plane as the second side. The method of claim 1,
The first metal part includes a first connection part connecting the first inner extension part and the first outer extension part,
The second metal part includes a second connection part connecting the second inner extension part and the second outer extension part,
The light emitting device package of claim 1, wherein a distance between the first and second connection parts is smaller than a distance between the centers of the first and second through holes. The method of claim 1,
The first and second metal parts include copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), A light emitting device package comprising at least one of silver (Ag). The method of claim 1,
The first and second metal portions have a thickness of 5 μm to 100 μm. The method of claim 4, wherein
The body includes a first body and a cavity disposed under the light emitting device and a second body disposed around the light emitting device,
The first and second ends, the light emitting device package located in the upper portion in the vertical direction than the bottom of the cavity. The method of claim 8,
A light emitting device package is disposed between the bottom of the cavity and the bottom of the light emitting device. Circuit board; And
A light emitting device package disposed on the circuit board;
The light emitting device package is a light emitting device package according to any one of claims 1 to 9,
The light emitting device package is a light source module disposed on the circuit board in a side view.

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