KR102459103B1 - Light emitting device package and light source unit - Google Patents

Abstract

The light emitting device package disclosed in the embodiment of the present invention includes: a light emitting device having first and second bonding portions at the lower portion; a body having a protrusion protruding in the direction of the light emitting device, a first through hole facing the first bonding unit, and a second through hole facing the second bonding unit within the protrusion; an adhesive layer disposed on an upper surface of the body, a side surface of the protrusion, and an upper surface of the light emitting device; and a molding part disposed on the adhesive layer, wherein the molding part surrounds the light emitting device, and the molding part may include a plurality of side surfaces facing the side surface of the light emitting device.

Description

Light emitting device package and light source device {LIGHT EMITTING DEVICE PACKAGE AND LIGHT SOURCE UNIT}

Embodiments of the present invention relate to a light emitting device package, a method for manufacturing a light emitting device package, and a light source device having the same.

Embodiments of the present invention relate to a semiconductor device package, a method for manufacturing a semiconductor device package, and a light source device having the same.

A semiconductor device including a compound such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials have developed red, green, and It has the advantage of being able to implement light of various wavelength bands, such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a Group III-5 or Group II-6 compound semiconductor material may be implemented as a white light source with good efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using a group 3-5 or group 2-6 compound semiconductor material, a photocurrent is generated by absorbing light in various wavelength ranges through the development of the device material. By doing so, light of various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, such a light receiving element has advantages of fast response speed, safety, environmental friendliness, and easy adjustment of element materials, and thus can be easily used in power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces a cold cathode fluorescence lamp (CCFL) constituting a transmission module of an optical communication means and a backlight of a liquid crystal display (LCD) display device. The application is expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device may be extended to high-frequency application circuits, other power control devices, and communication modules.

A light emitting device (Light Emitting Device) may be provided as a p-n junction diode having a property of converting electrical energy into light energy by using, for example, a group 3-5 element or a group 2-6 element on the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device, and a red light emitting device using a nitride semiconductor have been commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm. can be used

Ultraviolet rays can be divided into three types in the order of the longest wavelength: UV-A (315nm~400nm), UV-B (280nm~315nm), and UV-C (200nm~280nm). The UV-A (315nm~400nm) area is applied in various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit detection, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm~315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as a semiconductor device capable of providing a high output is requested, research on a semiconductor device capable of increasing the output by applying a high power is being conducted.

In addition, in a semiconductor device package, research on a method for improving the light extraction efficiency of the semiconductor device and improving the luminous intensity at the package stage is being conducted. In addition, in a semiconductor device package, research is being conducted on a method for improving the bonding force between the package electrode and the semiconductor device.

In addition, in the semiconductor device package, research is being conducted on a method for reducing manufacturing cost and improving manufacturing yield by improving process efficiency and changing the structure.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which a through hole of a body is disposed under a semiconductor device or a light emitting device and a conductive part is disposed on a surface of the through hole.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which a through hole of a body and a conductive part are disposed in a region overlapping the semiconductor device or the light emitting device.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which a device is attached to a protrusion of a body and electrically connected through a through hole, and side surfaces of a molding unit surrounding the device are exposed.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package for preventing adhesion and moisture penetration of the molding part by disposing an adhesive layer between the body and the molding part.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which the first resin is disposed between the body and the device to support and fix the lower part of the device.

An embodiment of the present invention provides a semiconductor device package or a light emitting device package in which one or a plurality of concave recesses are disposed on the upper portion of the body, and a first resin is disposed in the recesses to support and fix the lower portion of the device. can

Embodiments of the present invention may provide a semiconductor device package or a light emitting device package capable of improving light extraction efficiency and electrical characteristics.

Embodiments of the present invention may provide a semiconductor device package or a light emitting device package capable of improving process efficiency and suggesting a new package structure to reduce manufacturing cost and improve manufacturing yield.

An embodiment of the present invention can provide a semiconductor device package or a light emitting device package capable of preventing a re-melting phenomenon from occurring in a bonding region of the semiconductor device package in a process in which the semiconductor device package is re-bonded to a substrate or the like. have.

A light emitting device package according to an embodiment of the present invention includes: a light emitting device having first and second bonding portions on a lower surface; a body having a protrusion protruding in the direction of the light emitting device, a first through hole facing the first bonding unit, and a second through hole facing the second bonding unit within the protrusion; an adhesive layer disposed on an upper surface of the body, a side surface of the protrusion, and an upper surface of the light emitting device; and a molding part disposed on the adhesive layer, wherein the molding part surrounds the light emitting device, and the molding part may include a plurality of side surfaces facing the side surface of the light emitting device.

According to an embodiment of the invention, the adhesive layer is adhered to the upper surface of the body, the side surface of the protrusion, and the upper surface of the light emitting device, and the molding part is the adhesive layer on the upper surface of the body, the side surface of the protrusion, and the upper surface of the light emitting device. can be adhered to.

According to an embodiment of the invention, the adhesive layer is a light emitting device package having a rough surface.

According to an embodiment of the present invention, the molding part may have an inclined surface under the side surface, and the inclined surface may be disposed to face the side surface of the protrusion and be disposed lower than the lower surface of the light emitting device.

According to an embodiment of the present invention, a phosphor layer may be disposed between the adhesive layer and the upper surface of the light emitting device or between the adhesive layer disposed on the light emitting device and the molding part.

According to an embodiment of the invention, it may include a conductive portion filled in the first and second through-holes.

According to an embodiment of the present invention, at least one of a metal part and a conductive protrusion protruding from the first and second bonding parts of the light emitting device may be included on the surfaces of the first and second through-holes and the lower surface of the body.

According to an embodiment of the present invention, the body is formed of a resin material, and includes a first resin between the light emitting element and the protrusion, and the first resin may be disposed between the first and second bonding parts. .

According to an embodiment of the present invention, the protrusion may include a first recess concave under the light emitting device, and the first resin may be disposed in the first recess.

According to an embodiment of the invention, the protrusion includes an extension protrusion protruding in the lateral direction of the molding part, a concave portion is disposed between the extension protrusion and an upper surface of the body, and the adhesive layer and the molding unit are disposed in the concave portion. can

A light source device according to an embodiment of the present invention includes: a circuit board having first and second pads thereon; and the light emitting device package may be disposed on the circuit board.

According to an embodiment of the present invention, a conductive part may be provided in a through hole of a body facing the bonding parts of a semiconductor device or a light emitting device, thereby improving adhesion and electrical conductivity with the bonding part.

According to an embodiment of the invention, by disposing an adhesive layer between the body and the surface of the light emitting device and the molding part, it is possible to improve the adhesion between the body and the molding part by the adhesive layer.

According to an embodiment of the invention, by placing an adhesive layer under the molding part, it is possible to suppress the penetration of moisture.

According to an embodiment of the present invention, it is possible to provide a package without a lead frame by electrically connecting the device through the through hole of the body.

According to an embodiment of the present invention, the light beam distribution can be increased by disposing the device on the protrusion of the body and exposing the side surfaces of the molding part disposed on the periphery of the device.

According to an embodiment of the present invention, it is possible to reduce light loss by providing an inclined reflective surface on the lower side of the molding unit.

According to an embodiment of the invention, it is possible to improve the adhesion and electrical conductivity of the bonding portion of the flip chip on the protrusion of the body.

According to an embodiment of the invention, by disposing an adhesive layer on the surface of the body and the surface of the device, it is possible to improve adhesion to the molding part and to improve light extraction efficiency.

According to an embodiment of the present invention, by disposing the first resin between the lower portion of the device and the body, it is possible to improve the adhesive force and supporting power of the device.

According to an embodiment of the present invention, by arranging recesses on the upper body and the lower part of the device and disposing the first resin on the lower part of the device, it is possible to improve the adhesion and supporting power of the device.

According to an embodiment of the present invention, there is an advantage in that light extraction efficiency, electrical characteristics, and reliability can be improved.

According to an embodiment of the invention, there is an advantage of improving process efficiency and suggesting a new package structure to reduce manufacturing cost and improve manufacturing yield.

According to an embodiment of the present invention, there is an advantage in that it is possible to prevent a re-melting phenomenon from occurring in a bonding region of the semiconductor device package in the process of re-bonding the semiconductor device package to a substrate or the like.

According to an embodiment of the present invention, it is possible to improve the reliability of a semiconductor device package or a light emitting device package, and a light source device having the same.

1 is a plan view of a light emitting device package according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view on the AA side of the light emitting device package of FIG. 1 .
FIG. 3 is a cross-sectional view on the BB side of the light emitting device package of FIG. 1 .
FIG. 4 is another example of the light emitting device package of FIG. 1 .
FIG. 5 is a first modified example of the light emitting device package of FIG. 2 .
FIG. 6 is a second modified example of the light emitting device package of FIG. 2 .
FIG. 7 is a third modified example of the light emitting device package of FIG. 2 .
FIG. 8 is a fourth modified example of the light emitting device package of FIG. 2 .
FIG. 9 is a fifth modified example of the light emitting device package of FIG. 2 .
10 to 13 are views for explaining a manufacturing process of the light emitting device package of FIG. 2 .
14 is an example of a light source device having the light emitting device package of FIG. 2 .
15 is a cross-sectional view illustrating an example of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.

Hereinafter, an embodiment will be described with reference to the accompanying drawings. In the description of embodiments, each layer (film), region, pattern or structure is “on/over” or “under” the substrate, each layer (film), region, pad or pattern. In the case of being described as being formed on, “on/over” and “under” include both “directly” or “indirectly” formed through another layer. do. In addition, the reference for the upper / upper or lower of each layer will be described with reference to the drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The semiconductor device of the device package may include a light emitting device emitting light of ultraviolet, infrared or visible light. Hereinafter, as an example of a semiconductor device, a light emitting device is applied as an example, and a non-light emitting device, for example, a Zener diode, or a sensing device for monitoring wavelength or heat is included in a package or light source device to which the light emitting device is applied. can Hereinafter, a case in which a light emitting device is applied as an example of a semiconductor device will be described, and a light emitting device package will be described in detail.

1 is a plan view of a light emitting device package according to an embodiment of the present invention, FIG. 2 is a cross-sectional view on the A-A side of the light emitting device package of FIG. 1, FIG. 3 is a cross-sectional view on the B-B side of the light emitting device package of FIG. 1, and FIG. 1 is another example of the light emitting device package.

1 to 4 , the light emitting device package 100 may include a body 111 and a light emitting device 120 .

The body 111 may include a protrusion 15 . The protrusion 15 may be disposed on a center region of the body 111 . The protrusion 15 may protrude from the body 111 toward the light emitting device 120 . The protrusion 15 may overlap the light emitting device 120 in a vertical direction or a Z direction. The protrusion 15 may overlap the entire area of the light emitting device 120 in the vertical direction or the Z direction.

The upper surface of the body 111 excluding the protrusion 15 may be disposed lower than the upper surface of the protrusion 15 . The side of the protrusion 15 may or may not face the outer side of the body 111 . Accordingly, the distribution of the beam angle of the light emitted from the light emitting device 120 disposed on the protrusion 15 may be widened.

The upper surface of the protrusion 15 may be disposed higher than the upper surface of the body 111 disposed around the protrusion 15 . The upper surface area of the protrusion 15 may be equal to or larger than the lower surface area of the light emitting device 120 . A top area of the protrusion 15 may be equal to or larger than a top area of the light emitting device 120 . The upper surface area of the protrusion 15 may be 1 to 1.5 times or more of the upper surface area or the lower surface area of the light emitting device 120 . When the area of the upper surface of the protrusion 15 is smaller than the above range compared to the area of the upper surface or the lower surface of the light emitting device 120, the light emitted in the lateral direction of the light emitting device 120 proceeds in the body direction, resulting in light loss. In the case of being larger than the above range, the improvement in the distribution of the beam angle of light through the side surfaces S1 , S2 , S3 , and S4 of the molding part 150 may be insignificant. A side surface of the protrusion 15 may be disposed to face each side surface S1 , S2 , S3 , and S4 of the molding unit 150 .

The protrusion 15 may have a polygonal top view shape or a curved shape. As another example, the protrusion 15 may have a circular shape or an elliptical shape. The top view shape of the protrusion 15 may be the same as the top view shape of the light emitting device 120 .

The height t1 of the protrusion 15 may protrude in a range of 0.8 to 2 times the thickness of the light emitting device 120 . When the height t1 of the protrusion 15 is smaller than the above range, the light emitted from the light emitting device 120 travels in the body direction and light loss may occur. ), the rate of light traveling in the lateral direction may be increased. The height of the protrusion 15 may be, for example, in the range of 80 to 300 micrometers. A height t1 of the protrusion 15 may be smaller than a thickness of the body 111 . Here, the thickness of the body 111 may be a region other than the protrusion 15 .

The body 111 may be provided without a cavity. The upper surface of the body 111 may be disposed in a step structure from the upper surface of the protrusion 15 . For example, the body 111 may be made of a resin material or an insulating resin material. The body 111 includes polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Triphenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy, epoxy molding compound (EMC), silicone It may be formed of at least one selected from a group including a molding compound (SMC), ceramic, photo sensitive glass (PSG), and sapphire (Al ₂ O ₃ ). The body 111 may be formed of a resin material, and may include a filler made of a high refractive material such as TiO ₂ and SiO ₂ therein. The body 111 may be formed of a thermoplastic resin. The body 111 may be made of a transparent resin material or a reflective resin material.

The light emitting device package 100 may have a length in the first direction (X) equal to or greater than a length in the second direction (Y). In the following description, the first direction may be an X direction, the second direction may be a Y direction orthogonal to the X direction, and the third direction may be a Z direction orthogonal to the X and Y directions. When the light emitting device 120 has a rectangular shape, the first direction may be a direction of a longer side among sides of the light emitting device 120 . For example, the first direction may be a long side direction of the light emitting device 120 , and the second direction may be a short side direction. When the light emitting device 120 has a square shape, the lengths of sides of the first direction and the second "direction" may be the same. In the first direction, both short sides of the light emitting device 120 are opposite to each other. is disposed, and in the second direction, both long sides of the light emitting device 120 may be disposed on opposite sides of each other.

The body 111 may be formed of an insulating material. Since the body 111 has a structure in which the metal frame is removed from the bottom, the selection of body material may be wider than that of a structure having a metal frame. Since the body 111 is not injected with the lead frame in advance, it may be easy to change the position of the through hole of the body 111 , the size of the body 111 , or the design change of the package size.

The thickness of the body 111 may be 100 micrometers or more, for example, in the range of 100 to 800 micrometers. The body 111 may have through holes TH1 and TH2. The body 111 may have one or a plurality of through holes. The through holes TH1 and TH2 may include first and second through holes TH1 and TH2 spaced apart from each other. The first and second through holes TH1 and TH2 may pass through the lower surface of the upper surface of the body 111 disposed under the light emitting device 120 . The first and second through holes TH1 and TH2 may pass through the lower surface of the body 111 from the upper surface of the protrusion 15 . The first and second through-holes TH1 and TH2 may be disposed in the protrusion 15 and vertically overlap the protrusion 15 .

According to the embodiment, the width or area of the upper region of the first through hole TH1 may be smaller than or equal to the width or area of the lower region of the first through hole TH1 . The width or area of the upper region of the second through hole TH2 may be smaller than or equal to the width or area of the lower region of the second through hole TH2. For example, as shown in FIG. 8 , the width or area of the upper region of the first and second through holes TH1 and TH2 may be smaller than the width or area of the lower region. The first and second through-holes TH1 and TH2 may be provided in an inclined shape in which widths gradually decrease from the lower region to the upper region. The inner surfaces of the first and second through holes TH1 and TH2 may include at least one or two or more of a vertical surface, an inclined surface, or a curved surface. For example, as shown in FIG. 8 , the first and second through holes TH1 and TH2 may include inclined or curved surfaces Sc1 and Sc2 around them. In the inclined surface, the inclination angle of the outer inclined surface Sc2 may be smaller than the inclination angle of the inner inclined surface Sc1 based on a horizontal straight line.

A lower surface spacing between the first through hole TH1 and the second through hole TH2 may be 100 micrometers to 600 micrometers. The distance between the first through hole TH1 and the second through hole TH2 in the lower surface area of the body 111 is, when the light emitting device package 100 is mounted on a circuit board or a sub-mount, electrical It may be spaced apart within the above range to prevent harmful interference. A depth of the first and through holes TH1 and TH2 may be greater than a thickness of the body 111 . Here, the thickness of the body 111 may be 400 micrometers or less, for example, in the range of 80 to 400 micrometers or in the range of 100 to 300 micrometers.

The first and second through-holes TH1 and TH2 may be disposed in a region overlapping the region of the light emitting device 120 in a vertical direction. The top view shape of the first and second through holes TH1 and TH2 may include at least one of a circular shape, an elliptical shape, a polygonal shape, and an irregular shape having straight lines and curves. The upper length of the first and second through-holes TH1 and TH2 may be provided to have the same length in the first direction and the second direction, or may be provided to have a longer length in either direction. The lower lengths of the first and second through holes TH1 and TH2 may be provided to have the same length in the first direction and the second direction, or may be provided to have a longer length in either direction.

One or a plurality of the first through holes TH1 may be disposed under the first bonding portion 121 of the light emitting device 120 . One or a plurality of the second through holes TH2 may be disposed under the second bonding portion 122 of the light emitting device 120 . The first and second through holes TH1 and TH2 may have the same upper shape and the same lower shape. As another example, the upper and lower shapes of the first and second through holes TH1 and TH2 may be different from each other. An upper shape and a lower shape of the first and second through holes TH1 and TH2 may be symmetrical. An upper shape and a lower shape of the first and second through holes TH1 and TH2 may be asymmetrical. The first and second through holes TH1 and TH2 may be disposed on a vertical straight line in which the center of the upper shape and the center of the lower shape are the same in at least one of the first direction and the second direction, or may be disposed on different vertical straight lines. can For example, as shown in FIG. 8 , the upper and lower shapes of the first and second through holes TH1 and TH2 may be different from each other, or the upper and lower centers may be different from each other in the first direction. As shown in FIG. 8 , the upper and lower shapes of the first and second through holes TH1 and TH2 may be different from each other, or may be disposed at positions having different upper and lower centers in the second direction.

A molding part 150 may be disposed on the body 111 . The molding part 150 may be disposed to surround the light emitting device 120 . The molding part 150 may be disposed to surround the side surface of the light emitting device 120 and the side surface of the protrusion part 15 . The side surfaces S1 , S2 , S3 , and S4 of the molding part 150 may be disposed to face the side surface of the light emitting device 120 and the side surface of the protrusion 15 .

The molding part 150 may include first and second side surfaces S1 and S2 disposed in the first direction, and third and fourth side surfaces S3 and S4 disposed in the second direction. A distance between the first and second side surfaces S1 and S2 may be a length of the third and fourth side surfaces S3 and S4 in the first direction. A distance between the third and fourth side surfaces S3 and S4 may be a length of the first and second side surfaces S1 and S2 in the first direction.

The side surfaces S1 , S2 , S3 , and S4 of the molding part 150 may be disposed to face the side surface of the light emitting device 120 . Sides S1 , S2 , S3 , and S4 of the molding part 150 may be exposed on the body 111 . The side surfaces S1 , S2 , S3 , and S4 of the molding part 150 may be disposed on the same vertical plane as the side surface of the body 111 . The upper surface of the molding part 150 may be disposed on the light emitting device 120 and the body 111 .

The molding part 150 may include an insulating material. The molding part 150 may include a transparent insulating material. The molding unit 150 may include a wavelength conversion unit that receives the light emitted from the light emitting device 120 and provides wavelength-converted light. For example, the molding part 150 may be formed of at least one selected from a group including a phosphor, a quantum dot, and the like. The light emitting device 120 may emit blue, green, red, white, infrared or ultraviolet light. The phosphor or quantum dots may emit blue, green, or red light. The molding part 150 may not be formed.

The phosphor disposed inside or under the molding unit 150 may include a phosphor of a fluoride compound, for example, at least one of an MGF-based phosphor, a KSF-based phosphor, or a KTF-based phosphor. The phosphor may emit light with different peak wavelengths, and the light emitted from the light emitting device may emit light with different yellow and red or different red peak wavelengths. One kind of the phosphor may include a red phosphor. The red phosphor may have a wavelength range from 610 nm to 650 nm, and the wavelength may have a half maximum width of less than 10 nm. The red phosphor may include a fluoride-based phosphor. The fluorite-based phosphor is KSF-based red K ₂ SiF ₆ :Mn ₄₊ , K ₂ TiF ₆ :Mn ₄₊ , _{NaYF 4} :Mn ₄₊ , _{NaGdF 4 : Mn 4+} , K _{3 SiF 7 : Mn 4+} It may include at least one of The KSF-based phosphor, for example, may have a compositional formula of K _a Si _{1 - c} F _b :Mn ^{4 +} _c , wherein a is 1 ≤ a ≤ 2.5, b is 5 ≤ b ≤ 6.5, and c is 0.001 ≤ c ≤ 0.1 may be satisfied. In addition, the fluorite-based red phosphor may be coated with a fluoride not containing Mn, or may further include an organic coating on the surface of the phosphor or the surface of the fluoride coating not containing Mn to improve reliability at high temperature/high humidity. In the case of the fluorite-based red phosphor as described above, unlike other phosphors, since a narrow maximum width of 10 nm or less can be implemented, it can be utilized in high-resolution devices.

The phosphor composition according to the embodiment should basically conform to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr may be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y may be substituted with Tb, Lu, Sc, Gd, etc. of the lanthanide series. In addition, the activator Eu, etc. can be substituted with Ce, Tb, Pr, Er, Yb, etc. according to a desired energy level, and a sub-activator or the like may be additionally applied to the activator alone or to modify properties.

The quantum dot phosphor may include a II-VI compound or a group III-V compound semiconductor, and may emit red light. The quantum dots are, for example, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In, Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS ₂ , CuInSe ₂ and the like, and combinations thereof.

1 to 3 , in the light emitting device package according to an embodiment of the present invention, a predetermined gap may be disposed in a region between the body 111 and the light emitting device 120 . The height of the gap may be equal to or greater than the thickness of the first and second bonding portions 121 and 122 . A first resin 160 may be disposed in the gap. The first resin 160 may be disposed in an area between the first and second bonding parts 121 and 122 and between the lower surface of the light emitting device 120 and the upper surface of the body 111 . The first resin 160 may be disposed in a region between the first and second bonding portions 121 and 122 and between the lower surface of the light emitting device 120 and the upper surface of the protrusion 15 or the bottom of the cavity. . The first resin 160 may attach the light emitting device 120 to the protrusion 15 . The first resin 160 may include a resin material such as silicone or epoxy. The first resin 160 may include a metal oxide or a filler therein. For example, the first resin 160 may be formed of a material including a metal oxide or impurities such as TiO ₂ , SiO ₂ , Al ₂ O ₃ . The first resin 160 may be dispensed under the light emitting device 120 before the conductive parts 321 and 323 are formed to attach and fix the light emitting device 120 on the body 111 . have. Accordingly, it is possible to prevent the movement or tilt of the light emitting device 120 . Also, the first resin 160 can fix the light emitting device 120 to the body 111 even when the conductive parts 321 and 323 are remelted.

When light is emitted to the lower surface of the light emitting device 120 , the first resin 160 may provide a light diffusion function between the light emitting device 120 and the body 111 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120 , the first resin 160 provides a light diffusion function, thereby improving light extraction efficiency of the light emitting device package. In addition, the first resin 160 may reflect the light emitted from the light emitting device 120 . For example, when the first resin 160 includes a reflective function, the first resin 160 may be made of a material including a metal oxide or impurities such as TiO ₂ , SiO ₂ , Al ₂ O ₃ . can

The first resin 160 may be in contact with the lower surface of the light emitting device 120 and the body 111 . The first resin 160 may be in contact with the first and second bonding portions 121 and 122 . The first resin 160 adheres the light emitting device 120 to the body 111 , thereby increasing the supporting force of the light emitting device 120 and preventing the light emitting device 120 from tilting. can The first resin 160 may provide a stable fixing force between the light emitting device 120 and the body 111 . When the first resin 160 is in contact with the lower surface of the light emitting device 120, the conductive parts 321 and 323 bonded to the light emitting device 120 on the circuit board 201 as shown in FIG. 14 are remelted. , it is possible to prevent the flow of the light emitting device 120 and support the light emitting device 120 . That is, the first resin 160 may prevent the light emitting device 120 from being moved or tilted during the reflow process of the light emitting device package 100 .

2 and 3 , the body 111 or the protrusion 15 according to an embodiment of the present invention may include a recess R1. The recess R1 may overlap the light emitting device 120 and may be disposed in one or a plurality. At least a portion of the recess R1 may protrude outside the side surface of the light emitting device 120 . A length of the recess R1 in the second direction may be smaller than a length of the light emitting device 120 in the first direction. The length in the first direction of the recess R1 is 40 micrometers or more, for example, in the range of 40 to 120 micrometers, so that the first resin 160 disposed in the recess R1 can function as an adhesive. area can be provided. As another example, the recess R1 may have a length ranging from 40% to 120% of the length of the light emitting device 120 in the second direction, and in this case, the recess relieves thermal deformation in the first direction. It is possible to suppress cracks in materials such as conductive paste.

A width of the recess R1 in the first direction may be smaller than a width of the protrusion 15 . A width of the recess R1 in the first direction may be smaller than a distance between the first and second through holes TH1 and TH2. The length in the second direction of the recess R1 is arranged to be smaller than the length in the second direction of the light emitting device 120 , and functions as a support protrusion of the first resin 160 under the light emitting device 120 . can do. A length of the recess R1 in the second direction may be greater than a width of the recess R1 in the first direction.

The top view shape of the recess R1 may be a polygonal shape, for example, a triangular, quadrangular, or pentagonal shape. As another example, the recess R1 may have a circular shape or an elliptical shape, and may be provided in a shape capable of guiding the first resin 160 . The recess R1 may have a polygonal or curved side cross-sectional shape, for example, a triangular shape, a rectangular shape, or a hemispherical shape. The structure of the recess R1 may be provided in a structure in which the support force is not reduced while reducing the influence on the protrusion 15 .

An upper width of the recess R1 may be wider than a lower width in the first direction. An upper width of the recess R1 may be wider than a lower width in the first and second directions. The recess R1 may be formed to have an upper width wider than a lower width in the first direction. Since the recess R1 has a polygonal shape and an upper width is wider than a lower width, the recess R1 may be provided with an inclined surface. Accordingly, it is possible to guide and support the first resin 160 in the recess R1.

The first resin 160 may be adhered to the light emitting device 120 and the body 111 . The first resin 160 may be disposed between the first bonding portion 121 and the second bonding portion 122 of the light emitting device 120 or may be in contact with the first and second bonding portions 121 and 122 . . The first resin 160 may be adhered to a region between the lower surface of the light emitting device 120 and the body 111 . Accordingly, the first resin 160 may strengthen the lower adhesive force and the supporting force of the light emitting device 120 . In a process of bonding the bonding parts 121 and 122 of the light emitting device 120 or when bonding to a circuit board, a problem in which the light emitting device 120 is tilted by the conductive part can be prevented. The first resin 160 may be formed of a reflective resin material to diffuse light and improve reflection efficiency.

The first resin 160 disposed in the recess R1 may function as a support protrusion. The first resin 160 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The first resin 160 may provide a stable fixing force between the light emitting device 120 and the body 111 . The first resin 160 is, for example, in direct contact with the upper surface of the body 111 and disposed in the recess R1, in contact with the lower surface of the light emitting element 120, the light emitting element 120 ) can be fixed.

According to an embodiment of the present invention, as shown in FIGS. 3 and 4 , the light emitting device 120 may include a first bonding unit 121 , a second bonding unit 122 , and a light emitting structure 123 . The light emitting device 120 may include a substrate 124 . The light emitting device 120 may have a length in the first direction equal to a length in the second direction, or a length in the first direction may be longer than a length in the second direction.

The light emitting structure 123 may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The first bonding part 121 may be electrically connected to the first conductivity type semiconductor layer. The second bonding part 122 may be electrically connected to the second conductivity type semiconductor layer.

The substrate 124 is a light-transmitting layer and may be formed of an insulating material or a semiconductor material. The substrate 124 may be selected from a group including, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, an uneven pattern may be formed on a surface of the substrate 124 . The substrate 124 may be removed.

According to an embodiment of the present invention, the light emitting structure 123 may be provided as a compound semiconductor. The light emitting structure 123 may be formed of, for example, a group 2-6 or group 3-5 compound semiconductor. For example, the light emitting structure 123 may include at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). can be

The light emitting structure 123 may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first and second conductivity-type semiconductor layers may be implemented with at least one of a group 3-5 or group 2-6 compound semiconductor. The first and second conductivity type semiconductor layers are, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) can be formed with For example, the first and second conductivity-type semiconductor layers may include at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductivity-type semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductivity-type semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The active layer may be implemented with a compound semiconductor. The active layer may be embodied as, for example, at least one of a group 3-5 or group 2-6 compound semiconductor. When the active layer is implemented in a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers that are alternately arranged, and In _x Al _y Ga _{1 -x- y} N (0≤x≤1 , 0≤y≤1, 0≤x+y≤1). For example, the active layer may be selected from the group consisting of InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, InP/GaAs. It may include at least one.

A molding part 150 may be disposed around the light emitting device 120 . A lower surface of the light emitting device 120 may be disposed higher than an upper surface of the body 111 . A lower surface of the light emitting device 120 may be disposed higher than an upper surface of the protrusion 15 .

The first bonding unit 121 and the second bonding unit 122 may be disposed to be spaced apart from each other on the lower surface of the light emitting device 120 . The first bonding part 121 may be disposed on the body 111 or the protrusion 15 . The second bonding part 122 may be disposed on the body 111 or the protrusion 15 . The first and second bonding portions 121 and 122 may face the body 111 or the protrusion 15 . The first and second bonding parts 121 and 122 may be spaced apart from each other in the first direction. The first and second bonding portions 121 and 122 may be spaced apart from each other in the same direction as the first and second through holes TH1 and TH2.

The first and second bonding portions 121 and 122 may be electrodes or pads. Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding unit 121 and the second bonding unit 122 . In addition, the light emitted from the light emitting device 120 can be extracted toward the upper portion of the body 111 or the lateral direction of the molding unit 150 .

The first bonding part 121 may be disposed between the light emitting structure 123 and the body 111 . The second bonding part 122 may be disposed between the light emitting structure 123 and the body 111 . The first bonding unit 121 and the second bonding unit 122 may include at least one or both of a metal material and a non-metal material. The first and second bonding portions 121 and 122 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru , Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO may be formed as a single layer or multi-layer using one or more materials or alloys selected from the group consisting of .

The light emitting device 120 may include one or a plurality of light emitting cells therein. The light emitting cell may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected in series with each other in one light emitting device. Accordingly, the light emitting device 120 may have one or a plurality of light emitting cells, and when n light emitting cells are disposed in one light emitting device, the light emitting device may be driven with an n-fold driving voltage. For example, when a driving voltage of one light emitting cell is 3V and two light emitting cells are disposed in one light emitting device, each light emitting device may be driven with a driving voltage of 6V. Alternatively, when the driving voltage of one light emitting cell is 3V and the three light emitting cells are disposed in one light emitting device, each light emitting device may be driven with a driving voltage of 9V. The number of light emitting cells disposed in the light emitting device 120 may be one or two to five.

According to the light emitting device package 100 according to the present invention, the first and second through holes TH1 and TH2 may be provided by penetrating the upper and lower surfaces of the body 111 in the Z direction. The first and second through holes TH1 and TH2 may overlap the light emitting device 120 in the vertical direction (Z). The first through hole TH1 may be disposed under the first bonding portion 121 of the light emitting device 120 . The first through hole TH1 may be provided to vertically overlap the first bonding portion 121 of the light emitting device 120 . The first through hole TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 in the Z direction from the upper surface to the lower surface of the body 111 . By exposing the first bonding part 121 through the first through-hole TH1, an electrical path and A heat dissipation path may be provided.

The second through hole TH2 may be disposed under the second bonding portion 122 of the light emitting device 120 . The second through hole TH2 may vertically overlap the light emitting device 120 . The second through hole TH2 may be provided to vertically overlap the second bonding portion 122 of the light emitting device 120 . The second through hole TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 in a direction from the upper surface to the lower surface of the body 111 . By exposing the second bonding portion 122 through the second through-hole TH2, an electrical path and A heat dissipation path may be provided.

The first through hole TH1 and the second through hole TH2 may be disposed to be spaced apart from each other in the first direction. The first through hole TH1 and the second through hole TH2 may be disposed to be spaced apart from each other under the lower surface of the light emitting device 120 . The first through hole TH1 and the second through hole TH2 may overlap the light emitting device 120 in the Z-axis direction.

1 to 3 , the width of the first through hole TH1 in the X direction may be equal to the length in the Y direction, or the length in the Y direction may be greater than the width in the X direction. The width of the second through hole TH2 in the X direction may be the same as the length in the Y direction, or the length in the Y direction may be greater than the length in the X direction. The widths and lengths of the first and second through holes TH1 and TH2 in the first and second directions may vary depending on the sizes of the first and second bonding portions 121 and 122 . The width of the upper region of the first through hole TH1 in the X direction may be smaller than or equal to the width of the first bonding portion 121 . Also, the width of the upper region of the second through hole TH2 in the X direction may be smaller than or equal to the width of the second bonding portion 122 . The width of the first and second through holes TH1 and TH2 in the X direction may be the same or different from each other. The widths in the X direction of the first and second bonding portions 121 and 122 may be the same or different from each other. The length of the upper region of the first through hole TH1 in the Y direction may be less than or equal to the length of the first bonding portion 121 . Also, the length of the upper region of the second through hole TH2 in the Y direction may be less than or equal to the length of the second bonding portion 122 . The lengths of the first and second through holes TH1 and TH2 in the Y direction may be the same or different from each other. The lengths in the Y direction of the first and second bonding portions 121 and 122 may be the same or different from each other. For example, a lower surface area of the first bonding part 121 may be larger than an upper surface area of the first through hole TH1 . A lower surface area of the second bonding part 122 may be larger than an upper surface area of the second through hole TH2. The upper and lower shapes of the first and second through holes TH1 and TH2 may be symmetrical or non-symmetrical. The first and second through holes TH1 and TH2 have a width in the same direction as the direction X in which the two bonding portions 121 and 122 of the light emitting device 111 overlap in a direction in which the two bonding portions 121 and 122 do not overlap. It may be smaller than the length of (Y).

The center of the upper surface and the center of the lower surface of the first through hole TH1 may be disposed at the same center or may be displaced from each other. The center of the upper surface and the center of the lower surface of the second through hole TH2 may be disposed at the same center or may be displaced from each other. In the structure shown in FIG. 1 , the centers of the upper and lower surfaces of the first and second through holes TH1 and TH2 may be the same. In the structure shown in FIG. 8 , the centers of the upper and lower surfaces of the first and second through holes TH1 and TH2 may be different from each other. Here, when the centers of the upper and lower surfaces of the first and second through holes TH1 and TH2 are displaced from each other, the linear distance between the centers of the upper surfaces of the two through holes TH1 and TH2 may be smaller than the linear distance between the centers of the lower surfaces. have.

3, 5, and 6 , the light emitting device package may include conductive parts 321 and 323 in the first and second through holes TH1 and TH2. The light emitting device package may include conductive parts 321 and 323 in the first and second through holes TH1 and TH2, for example, a conductive paste such as solder paste or silver paste. The conductive parts 321 and 323 may be connected to each of the bonding parts 121 and 122 . The conductive parts 321 and 323 may include one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, and the like or an alloy thereof. The conductive parts 321 and 323 may include at least one of Cu _x Sn _y -based, Ag _x Sn _y -based, Au _x Sn _y -based _{, and} SAC-based paste, where x is 0<x<1, y=1- The condition of x, x>y can be satisfied. The conductive paste may include solder paste, silver paste, or the like, and may be configured as a multi-layer made of different materials or a multi-layer or a single layer made of an alloy.

The first conductive part 321 may be connected to the first bonding part 121 of the light emitting device 120 through the first through hole TH1 . The second conductive part 323 may be connected to the second bonding part 122 of the light emitting device 120 through the second through hole TH2. The conductive parts 321 and 323 may be disposed inside the through holes TH1 and TH2 and may not be exposed under the through holes TH1 and TH2. When the conductive parts 321 and 323 are disposed in the through holes TH1 and TH2, they may be bonded to each other with the same conductive paste as the bonding layer on the circuit board 201 . The height of the conductive parts 321 and 323 may be equal to or smaller than the height between the upper surface of the protrusion 15 and the lower surface of the body 111 . The height of the conductive parts 321 and 323 may be greater than a thickness between the upper and lower surfaces of the body 111 or the thickness of the body 111 .

14 , the first conductive part 321 may be connected to the first bonding part 121 of the light emitting device 120 and the first pad 211 of the circuit board 201 . The second conductive part 323 may be connected to the second bonding part 122 of the light emitting device 120 and the second pad 213 of the circuit board 201 . A first bonding layer 221 may be disposed between the first conductive part 321 and the first pad 211 and may be bonded to each other. A second bonding layer 223 may be disposed between the second conductive part 323 and the second pad 213 and may be bonded to each other. The first and second joint portions 221 and 223 may include a paste such as solder paste, Ag paste, or SAC.

The first conductive part 321 may vertically overlap with the first bonding part 121 of the light emitting device 120 . The second conductive part 323 may vertically overlap with the second bonding part 122 of the light emitting device 120 . Accordingly, electrical and thermal paths by the first and second conductive parts 321 and 323 can be minimized.

The circuit board 201 may be a printed circuit board (PCB). The circuit board 201 may include at least one of a resin material PCB, a metal core PCB (MCPCB, a metal core PCB), a flexible PCB (FPCB, a flexible PCB), and a rigid PCB. In the circuit board 201, an insulating layer or a protective layer is disposed on a base layer made of resin or metal, and pads 211 and 213 exposed from the insulating layer or the protective layer are disposed. The pads 211 and 213 may electrically connect one or a plurality of light emitting device packages. The insulating layer or the protective layer may be a solder resist material or a resin material.

Each of the pads 211 and 213 of the circuit board 201 may include, for example, at least one selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, and Al. of a material or an alloy thereof.

The first pad 211 is electrically connected to the first bonding part 121 through the first conductive part 321 , and the second pad 213 is electrically connected to the second conductive part 323 through the second conductive part 323 . It may be electrically connected to the second bonding part 122 .

Here, in the bonding process of the conductive parts 321 and 323 , the first and second conductive parts 321 and 323 are provided with a liquid material and are positioned on the first and second pads 211 and 213 of the circuit board 201 . After this, the light emitting devices 120 aligned on the circuit board 201 are combined. At this time, the first bonding layer 221 disposed on the first pad 211 is bonded to the first conductive part 321 in the first through hole TH1 and disposed on the second pad 213 . The second bonding layer 223 may be bonded to the second conductive part 323 in the second through hole TH2 . The lower surface of the body 115 or body 111 disposed between the first and second through holes TH1 and TH2 is made of a resin material, so that the first and second conductive parts 321 and 323 or the bonding layer (221,223) can be prevented from spreading. Accordingly, the body 111 disposed between the first and second conductive parts 321 and 323 can prevent the liquid conductive paste from being diffused and block electrical interference between the first and second bonding layers 221 and 223 . can

The conductive parts 321 and 323 may include one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, and the like or an alloy thereof. The material constituting the bonding portions 121 and 122 or the pads 211 and 213 and the material of the conductive portions 321 and 222 may be combined to form an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , wherein x satisfies the conditions of 0<x<1, y=1-x, x>y. can

The bonding parts 121 and 122 of the light emitting device 120 are formed with the material constituting the conductive parts 321 and 323 in the process of forming the conductive parts 321 and 323 or in the heat treatment process after the conductive parts 321 and 323 are provided. An intermetallic compound (IMC) layer may be formed between the portions 321 and 323 and the bonding portions 121 and 122 , between the conductive portions 321 and 323 and the pads 211 and 213 , or between the conductive portions 321 and 323 . . For example, the conductive parts 321 and 323 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, or the like, and may be configured as a multi-layer made of different materials or a multi-layer or a single layer made of an alloy. For example, the conductive parts 321 and 323 may include a Sn-Ag-Cu (SAC) material.

For example, an alloy layer may be formed by bonding between the material constituting the conductive parts 321 and 323 and the metal of the bonding parts 121 and 122 or the pads 211 and 213 . Accordingly, the conductive parts 321 and 323 and the bonding parts 121 and 122 or the pads 211 and 213 can be physically and electrically stably coupled to each other. The conductive parts 321 and 323 and the alloy layer can be physically and electrically stably coupled. The alloy layer may include at least one intermetallic compound layer selected from the group consisting of AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, the first material may be provided from the conductive portions 321 and 323 , and the second material may be provided from the bonding portions 121 and 122 or the pads 211 and 213 . can be provided from

When the conductive parts 321 and 323 include a Sn material and the metal layers of the bonding parts 121 and 122 or the pads 211 and 213 include an Ag material, Sn in the process in which the conductive parts 321 and 323 are provided or in the heat treatment process after being provided An intermetallic compound layer of AgSn may be formed by combining the material and the Ag material.

Alternatively, when the conductive parts 321 and 323 include a Sn material and the metal layer includes an Au material, AuSn by combining the Sn material and the Au material in the process in which the conductive parts 321 and 323 are provided or in the heat treatment process after being provided of an intermetallic compound layer may be formed.

Alternatively, when the conductive parts 321 and 323 include a Sn material and the metal layer includes a Cu material, CuSn is formed by combining a Sn material and a Cu material in a process in which the conductive parts 321 and 323 are provided or in a heat treatment process after being provided. of an intermetallic compound layer may be formed.

Alternatively, when the conductive parts 321 and 323 include an Ag material and some layers of the metal layer include a Sn material, in the process in which the conductive parts 321 and 323 are provided or in the heat treatment process after being provided, the bonding of the Ag material and the Sn material. Thus, an intermetallic compound layer of AgSn may be formed. The intermetallic compound layer described above may have a higher melting point than other bonding materials. In addition, the heat treatment process in which the metal compound layer is formed may be performed at a lower temperature than the melting point of a general bonding material. Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main board or the like through a reflow process, a re-melting phenomenon does not occur, so that electrical connection and physical bonding force are not deteriorated. There are advantages.

The light emitting device package 100 according to an embodiment of the present invention may include an adhesive layer 140 . The adhesive layer 140 may be disposed between the upper surface of the body and the molding part. The adhesive layer 140 may be disposed on the upper surface of the body. The adhesive layer 140 may be disposed on the surface of the body and the surface of the light emitting device. The adhesive layer 140 may be formed to a thickness of 150 nanometers or less, for example, 40 to 150 nanometers. Since the adhesive layer 140 is formed after the light emitting device is disposed, it may cover the light emitting device. The adhesive layer 140 may be disposed on a surface of the light emitting device, a side surface of the molding part, and an upper surface of the body . The adhesive layer 140 may be a plasma coating layer. The plasma coating layer is a layer formed using plasma, and may be SiO2. For example, the plasma coating layer uses HMDSO (Hexamethyldisiloxane) or TMDSO (1,1,3,3-Tetramethyldisiloxane) as a precursor and is deposited on the surface of the light emitting device 120 and the surface of the body 111 using plasma. can be The plasma coating layer may have a thickness within the range of 40 to 150 nm, and if it is less than 40 nm, it is difficult to prevent the penetration of moisture or gas, so that the boarding parts may be easily corroded. If it exceeds 150 nm, the interfaces formed by the plasma coating layer light loss may occur and the amount of light may be reduced. The plasma coating layer can protect from moisture or gas penetrating in the direction of the light emitting device 120 , thereby preventing corrosion of the metal part. The plasma coating layer may prevent moisture or moisture penetrating through the molding part 150 from penetrating into the light emitting device 111 . Accordingly, the adhesive layer 140 may protect the surface of the light emitting device 120 . The plasma coating layer may be formed in a single layer or in multiple layers.

The surface 42 of the adhesive layer 140 may include a rough surface. Since the adhesive layer 140 has a precursor therein, the thickness of the adhesive layer 140 is smaller than the diameter or width of the precursor, so that the surface 42 may be provided to be rough. Light reflection efficiency of the rough surface 42 of the adhesive layer 140 may be improved. The rough surface 42 of the adhesive layer 140 may have an increased adhesion area with the molding part 150 . Since the adhesive area of the rough surface 42 of the adhesive layer 140 with the molding part 150 is increased, moisture penetration can be suppressed.

The adhesive layer 140 may be adhered to the molding part 150 on the body 111 . The adhesive layer 140 may be adhered to the molding part 150 on a side surface of the protrusion part 15 . The adhesive layer 140 may be adhered to the molding part 150 on the light emitting device 120 . The adhesive layer 140 may be disposed along an upper edge of the body 111 . The outer portion of the adhesive layer 140 may be spaced apart from the molding portion 190 on the body 111 . Here, the outer lower portion Rs of the molding part 150 may be spaced apart from the adhesive layer 140 or the outer edge of the body 111 .

The outer lower portion Rs of the molding part 150 may be provided as an inclined surface. The inclined surface may include a flat surface or a curved surface. The outer lower portion Rs may include a total reflection surface. A region R2 between the outer lower portion Rs of the molding part 150 and the adhesive layer 140 is a region concave inward than the side surface of the molding part 150 and may be a reflective region. The concave region R2 is continuously disposed along each side surface S1 , S2 , S3 , S4 of the molding part 150 as shown in FIG. 1 , or opposite sides of the molding part 150 as shown in FIG. 4 . may be spaced apart from each other.

The outer lower portion Rs of the molding unit 150 may be inclined between the adhesive layer 140 and a side surface of the molding unit 150 . An outer lower portion Rs of the molding part 150 may be disposed lower than a lower surface of the light emitting device 120 . The outer lower part Rs of the molding part 150 may be disposed at a height lower than the upper surface of the protrusion part 15 . When the outer lower portion Rs is an inclined surface, it may have an angle of 60 degrees or less, for example, 30 degrees to 60 degrees with respect to the upper surface of the body 111 . When the inclination angle of the outer lower portion Rs is smaller or larger than the above range, light reflection efficiency may be reduced.

Since the lower side of the molding part 150 is provided as an inclined surface spaced apart from the adhesive layer 140 , it is possible to effectively reflect the light emitted in the lateral direction of the light emitting device 120 .

According to an embodiment of the present invention, by disposing the protrusion 15 in the center region of the body 111, the light emitted downward from the light emitting device 120 having a flip-chip structure disposed on the protrusion 15 is transmitted to the It is possible to prevent the problem of penetrating the body (111). In addition, by reflecting the light on the lower side of the side of the molding part 150, it is possible to reduce the loss of light that is out of the distribution of the beam angle.

As shown in FIG. 1 , the outer lower part Rs of the molding part 150 may be disposed in a region facing each side surface of the protrusion part 15 . The outer lower portion Rs of the molding unit 150 may be respectively disposed under each side of the molding unit 150 . That is, the first to fourth side surfaces S1 , S2 , S3 , and S4 of the molding part 150 may have an outer lower part Rs in the lower portion to reflect light.

As shown in FIG. 4 , the outer lower portions Rs1 and Rs2 of the molding part 150 may be respectively disposed in regions facing both side surfaces S1 and S2 of the protrusion 150 . The outer lower portions Rs1 and Rs2 of the molding part 150 may be respectively disposed under the first and second side surfaces S1 and S2 opposite to each other of the molding part 150 . That is, the first and second side surfaces S1 and S2 of the molding unit 150 may have outer lower portions Rs1 and Rs2 at the lower portion to reflect light. The outer lower portions Rs1 and Rs2 of the molding unit 150 are disposed below the first side S1 and the second side S2 of the molding unit 150 to prevent light leaking in the first direction. can reflect In addition, the third and fourth sides S3 and S4 of the molding part 150 may extend to the adhesive layer 140 to be adhered. Accordingly, the distribution of the light emitted from the molding unit 150 may have a distribution of the angle of incidence in the second direction greater than that of the distribution of the angle of view in the first direction. In this case, the outer lower portions Rs1 and Rs2 of each of the molding units 150 may be disposed in order to reduce the distribution of the beam angle in a specific direction and increase the light reflectance. In addition, the outer lower portion Rs of the molding unit 150 may be disposed on at least one side, two sides, or three or more side surfaces of each side.

In an embodiment of the invention, the extension protrusion 13 of the protrusion 15 of the body 111 may protrude from the upper surface of the protrusion 15 in the horizontal direction. The extension protrusion 13 of the protrusion part 15 of the body 111 may protrude in a lateral direction of the molding part 150 . An outer region of the light emitting device 120 may be disposed on the extension protrusion 13 of the protrusion 15 . Since the extension protrusion 13 of the protrusion 15 protrudes in the lateral direction, the concave portion 11 may be disposed in a region between the extension protrusion 13 and the body 111 . The adhesive layer 140 may be disposed in the recess 11 , or the adhesive layer 140 and the molding part 150 may be disposed. The concave portion 11 may support the molding portion 160 . The concave part 11 may support the molding part 150 when the molding part 150 is thermally deformed or the body 111 is thermally deformed. The concave portion 11 may support thermal deformation in a vertical direction of the molding portion 150 to prevent interfacial separation between the molding portion 150 and the adhesive layer 140 . The concave portion 11 may provide a long moisture permeation path, thereby suppressing moisture permeation.

FIG. 5 is a first modified example of the light emitting device package of FIG. 2 . The configuration of FIG. 5 may optionally include the configuration disclosed above, and for the description of the same configuration, reference will be made to the description disclosed above.

Referring to FIG. 5 , the light emitting device package may include a phosphor layer 130 . The phosphor layer 130 may be disposed between the light emitting device 120 and the molding part 150 . The phosphor layer 130 may be disposed between the light emitting device 120 and the adhesive layer 140 . As another example, the phosphor layer 130 may be disposed between the adhesive layer 140 and the molding part 150 . The phosphor layer 130 may be in contact with the upper surface of the light emitting device 120 . The phosphor layer 130 may be disposed on an upper surface and a side surface of the light emitting device 120 . The thickness of the phosphor layer 130 may be thinner than that of the substrate 124 of the light emitting device 120 .

The phosphor layer 130 may include a resin material such as silicone or epoxy. The phosphor layer 130 may include a phosphor or quantum dots. The phosphor may include at least one of red, green, yellow, and blue phosphors. Since the phosphor layer 130 is disposed on the light emitting device 120 , it is possible to increase the wavelength conversion efficiency of light.

When the phosphor layer 130 is disposed between the adhesive layer 140 and the light emitting device 120 , the phosphor may be provided in a uniform distribution, and thus wavelength conversion efficiency may be improved. When the phosphor layer 130 is disposed between the adhesive layer 140 and the molding part 150 , the phosphor can be provided in a uniform distribution, and damage due to heat generated from the light emitting device 120 is reduced. can give

FIG. 6 is a second modified example of the light emitting device package of FIG. 2 . The configuration of FIG. 6 may optionally include the configuration disclosed above, and for the description of the same configuration, reference will be made to the description disclosed above.

Referring to FIG. 6 , the light emitting device package may include a first resin layer 145 . The first resin layer 145 may be disposed between the adhesive layer 140 and the molding part 150 . The first resin layer 145 may be disposed on the upper surface of the body, the side surface of the protrusion 15 , and the upper surface of the light emitting device 120 along the adhesive layer 140 . The first resin layer 145 may be thicker than the adhesive layer 140 and thinner than the molding part 150 . The first resin layer 145 may include a resin material such as transparent silicone or epoxy. The first resin layer 145 may be a layer having a higher refractive index than that of the molding part 150 . Accordingly, the extraction efficiency of the light emitted from the light emitting device 120 may be improved.

An outer lower portion Rs of the first resin layer 145 may be provided in an inclined structure. The outer lower portion Rs may be disposed under the side surface of the molding unit 150 and may reflect incident light. The inclination angle of the lower outer side is formed in the range of 30 to 60 degrees, so that the incident light may be reflected in the direction of the upper surface of the molding unit 150 . Since the first resin layer 145 is provided in a structure that surrounds the light emitting device along the adhesive layer, it is possible to suppress moisture penetration and improve light extraction efficiency.

7 is a third modification of the light emitting device package of FIGS. 2 and 5 . The configuration of FIG. 7 may optionally include the configuration disclosed above, and for the description of the same configuration, reference will be made to the description disclosed above.

Referring to FIG. 7 , the light emitting device package may include metal parts 114 and 116 disposed in at least one of the lower surface of the body 111 and the through holes TH1 and TH2 . The metal parts 114 and 116 may include first and second metal parts 114 and 116 spaced apart from each other. The first metal part 114 and the second metal part 116 may be physically separated. The first metal part 114 and the second metal part 116 may be disposed so as not to overlap in the vertical direction or the Z direction.

The first metal part 114 may be disposed on at least one or both of the surface of the first through hole TH1 and the lower surface of the body 111 . The second metal part 116 may be disposed on at least one or both of the surface of the second through hole TH2 and the lower surface of the body 111 . The first metal part 114 may be disposed on the entire surface or a part of the surface of the first through hole TH1 . The second metal part 116 may be disposed on the entire surface or part of the surface of the second through hole TH2 . The first metal part 114 may be exposed on the upper surface of the first through hole TH1 . The second metal part 116 may be exposed on the upper surface of the second through hole TH2 . The top surface of the first metal part 114 may be disposed on the same plane as the top surface of the protrusion 15 disposed under the light emitting device 120 on the top surface of the first through hole TH1 . The top surface of the second metal part 116 may be disposed on the same plane as the top surface of the protrusion 15 disposed under the light emitting device 120 on the top surface of the second through hole TH2 . The first and second metal parts 114 and 116 may be disposed around the first and second through holes TH1 and TH2. The inner holes of the first and second metal parts 114 and 116 may be center holes or inner holes of the first and second through holes TH1 and TH2 that penetrate in the vertical direction.

The thickness of the first metal part 114 may be less than 1/2 of the width of the upper portion of the first through hole TH1 or the width in the first and second directions, whichever is smaller, in this case, the first metal part The interior of the 114 may be provided in a structure in which a hole is disposed at the center of the first through hole TH1. The thickness of the second metal part 116 may be less than 1/2 of the width of the upper portion of the second through hole TH2 or the width in the first and second directions, whichever is smaller, in this case, the second metal part The interior of the 116 may be provided in a structure in which a hole is disposed at the center of the second through hole TH2. A total thickness of the first metal part 114 and the second metal part 116 may be smaller than an upper width of the first or second through-hole TH1 in the first and second directions. In this case, the first and second metal parts 114 and 116 have the same thickness.

The first metal part 114 and the second metal part 116 may be made of metal. The first and second metal parts 114 and 116 may include, for example, copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), It may be selected from tin (Sn) and silver (Ag), and may be formed as a single layer or multiple layers. The first metal part 114 and the second metal part 116 are multi-layered, and may include a first layer in contact with the body 111 and a second layer under the first layer, The first layer may include at least one of Ti, Cr, Ta, and Pt, and the second layer may include at least one of Au, Ag, and Cu.

The thickness of the first and second metal parts 114 and 116 may be smaller than the thickness between the upper and lower surfaces of the body 111 disposed under the light emitting device 120 . The thickness of the first and second metal parts 114 and 116 may be 5 micrometers or less, for example, in the range of 2 to 5 micrometers. When the thickness of the metal parts 114 and 116 is greater than the above range, improvement in thermal conductivity or electrical conductivity is insignificant, and when the thickness is less than the above range, heat dissipation efficiency or electrical conductivity may be deteriorated. The first and second metal parts 114 and 116 may be formed on the surface of the body 111 through a deposition process or a plating process.

By forming the metal parts 114 and 116 on the surface of the body 111 through a deposition process or a plating process, they may be provided with a thin thickness. Since the light emitting device package according to an embodiment of the present invention does not integrally inject the lead frame and the body, it is possible to solve the problem caused by the difference in the coefficient of thermal expansion between the two materials when the lead frame and the body disposed under the light emitting device are combined. In addition, by performing a deposition process or a plating process using a metal on the surface of the through-holes TH1 and TH2 provided in advance in the body 111, the thickness of the metal part is 1/3 or less of the upper width of the through-hole in the first direction. can That is, when the thickness of the metal portion is 1/3 or more of the upper width of the through hole, it is difficult to secure the upper width of the through hole, so that the contact area between the bonding portion and the conductive portion may be reduced.

The first metal part 114 may extend from the first through hole TH1 to the lower surface of the body 111 . The second metal part 116 may extend from the first through hole TH2 to the lower surface of the body 111 . The first and second metal parts 114 and 116 disposed on the lower surface of the body 111 may have the same area or different areas on the lower surface of the body 111 . The first and second metal parts 114 and 116 may improve electrical conduction and heat conduction efficiency. At least one or both of the first and second metal parts 114 and 116 and the conductive parts 321 and 323 may be disposed in the first and second through holes TH1 and TH2. The conductive parts 321 and 323 may be disposed in the first and second metal parts 114 and 116 disposed in the first and second through holes TH1 and TH2. A lower surface of the body 111 may be exposed in a region between the first and second metal parts 114 and 116 , and in the exposed region, a lower surface of the body may be concave in the direction of the light emitting device. When the first and second metal parts 114 and 116 are physically separated by laser scribing, the lower surface of the body 111 may be etched to a predetermined depth.

The heights of the first and second metal parts 114 and 116 disposed in the first and second through holes TH1 and TH2 are greater than the heights of the first and second through holes TH1 and TH2, and the body ( 111) may be greater than the thickness of the Upper ends of the first and second metal parts 114 and 116 may be disposed equal to or lower than upper surfaces of the first and second through holes TH1 and TH2. As another example, upper portions of the first and second metal parts 114 and 116 may extend to the upper surface of the protrusion 15 through the first and second through holes TH1 and TH2 . The first and second metal parts 114 and 116 may be disposed in a lower region of the light emitting device 120 and may not protrude to the outside of the side surface of the light emitting device 120 . For example, even if the first and second metal parts 114 and 116 are disposed in the regions of the first and second through holes TH1 and TH2 or extend on the upper surface of the body 111 , the It may not be exposed to the outside of the side. This is because the material of the body 111 has better reflective properties than the materials of the metal parts 114 and 116 , and when the metal parts 114 and 116 are exposed to the outside of the light emitting device 120 , the reflective property of light is lowered. can be

The first and second metal parts 114 and 116 may be connected to the first and second bonding parts 121 and 122 . The first metal part 114 may be in contact with or connected to the first bonding part 121 . The second metal part 116 may be in contact with or connected to the second bonding part 122 . A metal or an intermetallic compound (IMC) layer may be disposed at an interface between the first and second metal portions 114 and 116 and the first and second bonding portions 121 and 122 . The metal or intermetallic compound layer may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , wherein x is 0<x<1, y=1-x, x>y. can be satisfied with

The first and second metal parts 114 and 116 may be connected to the first and second conductive parts 321 and 323 . A metal or an intermetallic compound (IMC) is formed at the interface between the first and second metal parts 114 and 116 and the first and second bonding parts 121 and 122 or the first and second conductive parts 321 and 323 . Layers may be placed. The metal or intermetallic compound layer may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , wherein x is 0<x<1, y=1-x, x>y. can be satisfied with

An adhesive layer 140 may be disposed on the body 111 , and a first resin layer 145 may be disposed on the adhesive layer 140 . A molding part 150 may be disposed on the first resin layer 145 . The light emitting device 120 may be covered by at least two or more of the adhesive layer 140 , the first resin layer 145 , and the molding part 150 on the protrusion 15 to protect the light emitting device 120 . can do.

As another example, the first and second metal parts 114 and 116 may be disposed in areas of the through-holes TH1 and TH2 that are not formed on the lower surface of the body. As another example, the first and second metal parts 114 and 116 may be formed on the lower surface of the body without being formed in the through hole.

Since the first metal part 114 according to an embodiment of the present invention is connected to at least one of the first bonding part 121 and the first conductive part 321 of the light emitting device 120 , it has electrical and thermal conductivity characteristics. This can be improved. Since the second metal part 116 is connected to at least one of the second bonding part 122 and the second conductive part 323 of the light emitting device 120 , electrical and thermal conductivity characteristics may be improved. .

FIG. 8 is a fourth modification of the light emitting device package of FIGS. 2, 5 and 7 . The configuration of FIG. 8 may optionally include the configuration disclosed above, and for description of the same configuration, reference will be made to the description disclosed above.

Referring to FIG. 8 , the light emitting device package may include metal parts 114 and 116 disposed on the lower surface of the body and the through holes. The metal parts 114 and 116 may include first and second metal parts 114 and 116 spaced apart from each other. The first metal part 114 and the second metal part 116 may be physically separated. The first metal part 114 and the second metal part 116 may be disposed so as not to overlap in the vertical direction or the Z direction.

A width or a length of the upper portion h1 of the first and second through holes TH1 and TH2 in the first direction may be smaller than a width of the lower portion h2 or a length in the first direction. In this case, the area of the lower portion h2 of the first and second through holes TH1 and TH2 may be larger than the area of the upper portion. The side surfaces of the upper portion h1 of the first and second through holes TH1 and TH2 may be provided as vertical surfaces, and the side surfaces Sc1 and Sc2 of the lower portions h2 may be provided as inclined surfaces. . In addition, the inclination angle of the outer side surface Sc1 in the lower part h2 of the through holes TH1 and TH2 is arranged to be smaller than the inclination angle of the inner surface Sc2 based on a horizontal straight line, and as it goes toward the bottom of the hole, the hole width or The width in the first direction may gradually increase.

Also, the center of the upper portion h1 and the center of the lower portion h2 of the first and second through holes TH1 and TH2 may be disposed at different positions with respect to the first direction or the second direction. That is, the center of the lower portion h2 of the first and second through holes TH1 and TH2 may be disposed outside the center of the upper portion h1. The distance between the centers of the lower portions h2 of the first and second through holes TH1 and TH2 may be smaller than the distance between the centers of the upper portions h1. When the above-described conductive parts are filled in the first and second through holes TH1 and TH2, the contact area between the conductive part and the lower outer surface Sc1 is increased, so that the reliability of the conductive part can be improved. In addition, when the conductive part is injected, injection efficiency may be improved.

The metal parts 114 and 116 may be disposed to extend to the surface of the through-holes TH1 and TH2 and the lower surface of the body 111 . Heat conduction efficiency and electric conduction efficiency may be improved by these metal parts 114 and 116 .

Meanwhile, the light emitting device package may include conductive protrusions 51 and 52 under the light emitting device 120 . The conductive protrusions 51 and 52 may be disposed in the first and second through holes TH1 and TH2. The conductive protrusions 51 and 52 may be adjacent to or connected to the first and second metal parts 114 and 116 . The conductive protrusions 51 and 52 and the first and second metal parts 114 and 116 may be disposed in the first and second through holes TH1 and TH2. The conductive protrusions 51 and 52 include a first conductive protrusion 51 protruding from the first bonding part 121 toward the bottom of the body, and a second protruding from the second bonding part 122 in the direction of the bottom of the body. It may include a conductive protrusion 52 . The first and second conductive protrusions 51 and 52 may contact conductive portions filled in the above-described through holes TH1 and TH2 and may be connected to the first and second pads 211 and 213 . The heights or thicknesses of the first and second conductive protrusions 51 and 52 are provided to be smaller than or larger than the thickness of the body 111, so that the conductivity injected into the first and second through holes TH1 and TH2. It may be connected to the part and may face the first and second pads of the circuit board. The first and second conductive protrusions 51 and 52 may be exposed on the lower surface of the body 111 through the first and second through holes TH1 and TH2.

The conductive protrusions 51 and 52 may have a columnar shape, for example, a circular columnar shape or a polygonal columnar shape. The conductive protrusions 51 and 52 may include a metal pillar having a seed layer disposed on the bonding portion 121 and 122 and protruding from the seed layer in a pillar shape. The metal pillar may include at least one of Cu, Au, and Ag. The bottom view shape of the metal pillar may be a circular pillar or a polygonal pillar shape.

In the embodiment of the present invention, since the conductive protrusions 51 and 52 are provided in the through holes TH1 and TH2, electrical reliability in the through holes can be improved.

FIG. 9 is a fifth modified example of the light emitting device package of FIG. 2 . The configuration of FIG. 9 may optionally include the configuration disclosed above, and for the description of the same configuration, reference will be made to the description disclosed above.

Referring to FIG. 9 , the protrusion 15 of the body 111 is disposed below the light emitting device 120 and supports the light emitting device 120 . The protrusion 15 may be disposed to be larger than an area of a lower surface or an area of the upper surface of the light emitting device 120 . The extension protrusion 13 disposed on the outside of the protrusion 15 may extend more outward than the side surface of the light emitting device 120, and a concave portion 11 between the extension protrusion 13 and the upper surface of the body. The depth of can be arranged deeper. The extension protrusion 13 may protrude in a range of 5 to 100 micrometers from the side surface of the light emitting device 120 to provide a deep depth of the concave portion 11 under the extension protrusion 13 . The extension protrusion 13 may be disposed from the side surface of the light emitting device 120 to at least twice the thickness of the adhesive layer 140 , for example, in the range of 2 times to 10 times. The adhesive layer 140 and the molding part 150 may be disposed in the concave part 11 to support the molding part 150 according to the thermal deformation of the molding part 150 and the body 111 . can In addition, a portion of the adhesive layer 140 may be adhered to the upper surface of the protrusion 15 , that is, the upper surface of the extension protrusion 13 , so that the adhesive force between the adhesive layer 140 and the upper surface of the protrusion 15 is strengthened, and moisture penetration can be inhibited.

10 to 13 are views illustrating a manufacturing process of the light emitting device package of FIG. 2 .

Referring to FIG. 10 , a plurality of protrusions 15 are disposed on the body 111 , and first and second through-holes TH1 and TH2 are formed in each of the protrusions 15 . The light emitting device 120 is adhered to the protrusion 15 with the first resin 160 . The first resin 160 may be disposed in the first recess R1 concavely disposed in the protrusion 15 . The first bonding portion 121 of the light emitting device 120 faces the first through-hole TH1, and the second bonding portion 122 faces the second through-hole TH2.

Referring to FIG. 11 , the adhesive layer 140 is formed on the upper surface of the body 111 , the side surface of the protrusion 15 , and the upper surface of the light emitting device 120 . The adhesive layer 140 may be a plasma coating layer. The plasma coating layer is a layer formed using plasma, and may be SiO2. For example, the plasma coating layer uses HMDSO (Hexamethyldisiloxane) or TMDSO (1,1,3,3-Tetramethyldisiloxane) as a precursor and is deposited on the surface of the light emitting device 120 and the surface of the body 111 using plasma. can be The plasma coating layer may have a thickness within the range of 40 to 150 nm, and if it is less than 40 nm, it is difficult to prevent the penetration of moisture or gas, so that the boarding parts may be easily corroded. If it exceeds 150 nm, the interfaces formed by the plasma coating layer light loss may occur and the amount of light may be reduced. The plasma coating layer can protect from moisture or gas penetrating in the direction of the light emitting device 120 , thereby preventing corrosion of the metal part. The plasma coating layer may prevent penetrating moisture or moisture. Accordingly, the adhesive layer 140 may protect the surface of the light emitting device 120 . The plasma coating layer may be formed in a single layer or in multiple layers.

The surface of the adhesive layer 140 may include a rough surface. Since the adhesive layer 140 has a precursor therein, the adhesive layer 140 has a thickness smaller than a diameter or a width of the precursor, so that the surface may be provided with a rough surface. Light reflection efficiency of the rough surface of the adhesive layer 140 may be improved. The rough surface of the adhesive layer 140 may have an increased adhesion area with the subsequently dispensed molding part.

Referring to FIG. 12 , a molding part 150 is formed on the body 111 . The molding part 150 may be formed by a dispensing process. A molding barrier part 155 for separating package units may be disposed in the molding part 150 . The molding barrier part 155 may provide an inclined surface at a lower portion, so that the lower side Rs of the molding part 150 may be formed as an inclined surface. The molding part 150 may surround the circumference of the light emitting device 120 .

12 and 13 , after the molding barrier part 155 is removed, the body 111 is cut in units of packages. Accordingly, an inclined surface may be provided on the lower side Rs of the molding part 155 , and the side surface of the light emitting device 120 and the side surface of the molding part 155 may be disposed to face each other. The light emitted from the light emitting device 120 may provide a different light beam distribution angle distribution in the first direction and the second direction depending on whether the lower side Rs of the molding part 150 is formed. That is, as in the structure of FIGS. 1 and 4 , the side lower portion Rs may be selectively formed among the side surfaces of the molding part 150 .

According to the light emitting device package according to the embodiment, the bonding parts 121 and 122 of the light emitting device 120 may receive driving power through the conductive parts disposed in the through holes TH1 and TH2 of the body 111 . In addition, the melting point of the conductive portion may be selected to have a higher value than that of a general bonding material. The light emitting device package according to the embodiment has an advantage in that electrical connection and physical bonding strength are not deteriorated because a re-melting phenomenon does not occur even when bonding to a main substrate or the like through a reflow process. According to the light emitting device package according to the embodiment, there is no need to expose the body 111 to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the body 111 from being damaged or discolored by exposure to high temperature.

The light emitting device package according to the embodiment may be supplied by being mounted on a sub-mount or a circuit board 201 . However, when a conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon may occur in the bonding region between the frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling may be weakened, and thus the position of the light emitting device may change, and optical and electrical characteristics and reliability of the light emitting device package may be deteriorated. Therefore, in the light emitting device package 100 according to the embodiment, the light emitting device 120 is attached to the first resin 160, so that even when bonding to a main substrate or the like through a reflow process, remelting (re) -melting) phenomenon does not occur, so there is an advantage that the electrical connection and physical bonding force are not deteriorated.

15 is a cross-sectional view illustrating an example of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.

Referring to FIG. 15 , in the light emitting device, only the relative arrangement relationship of the first electrode 627 and the second electrode 628 is conceptually illustrated. The first electrode 627 may include a first bonding part 621 and a first branch electrode 625 . The second electrode 628 may include a second bonding part 622 and a second branch electrode 626 .

The light emitting device may include a light emitting structure 623 disposed on a substrate 624 . The substrate 624 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 624 may be provided as a patterned sapphire substrate (PSS) having a concave-convex pattern formed on an upper surface thereof.

The light emitting structure 623 may include a first conductivity type semiconductor layer 623a, an active layer 623b, and a second conductivity type semiconductor layer 623c. The active layer 623b may be disposed between the first conductivity type semiconductor layer 623a and the second conductivity type semiconductor layer 623c. For example, the active layer 623b may be disposed on the first conductivity type semiconductor layer 623a , and the second conductivity type semiconductor layer 623c may be disposed on the active layer 623b .

In an embodiment, the first conductivity-type semiconductor layer 623a may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 623c may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity-type semiconductor layer 623a may be provided as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 623c may be provided as an n-type semiconductor layer.

The light emitting device may include a first electrode 627 and a second electrode 628 . The first electrode 627 may include a first bonding part 621 and a first branch electrode 625 . The first electrode 627 may be electrically connected to the second conductivity type semiconductor layer 623c. The first branch electrode 625 may be disposed to be branched from the first bonding part 621 . The first branched electrode 625 may include a plurality of branched electrodes branched from the first bonding part 621 . The second electrode 628 may include a second bonding part 622 and a second branch electrode 626 . The second electrode 628 may be electrically connected to the first conductivity-type semiconductor layer 623a. The second branch electrode 626 may be disposed to be branched from the second bonding part 622 . The second branched electrode 626 may include a plurality of branched electrodes branched from the second bonding part 622 .

The first branched electrode 625 and the second branched electrode 626 may be alternately disposed in a finger shape. Power supplied through the first bonding unit 621 and the second bonding unit 622 by the first branched electrode 625 and the second branched electrode 626 is supplied to the entire light emitting structure 623 . spread and can be provided.

The first electrode 627 and the second electrode 628 may be formed in a single-layer or multi-layer structure. For example, the first electrode 627 and the second electrode 628 may be ohmic electrodes. For example, the first electrode 627 and the second electrode 628 are ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni , Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf may be at least one or an alloy of two or more of these materials.

Meanwhile, a protective layer may be further provided on the light emitting structure 623 . The protective layer may be provided on the upper surface of the light emitting structure 623 . In addition, the protective layer may be provided on a side surface of the light emitting structure 623 . The protective layer may be provided such that the first bonding portion 621 and the second bonding portion 622 are exposed. In addition, the protective layer may be selectively provided on the periphery and the lower surface of the substrate 624 .

For example, the protective layer may be provided with an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y It may be formed of at least one material selected from the group comprising

In the light emitting device according to the embodiment, the light generated in the active layer 623b may be emitted in six directions of the light emitting device. The light generated by the active layer 623b may be emitted in a six-plane direction through the upper surface, the lower surface, and four side surfaces of the light emitting device.

As another example of the light emitting device, at least one of the first electrode and the second electrode may be implemented in a pattern shape, and conductive protrusions may be disposed on the patterned electrode. The pattern may include a pattern having one or a plurality of female shapes or branch shapes. Alternatively, a conductive protrusion may be disposed on each bonding portion of the light emitting device. The light emitting device has been described as a structure having one light emitting cell. In this case, when the light emitting cell includes the light emitting structure, the driving voltage of the light emitting device may be a voltage applied to one light emitting cell. As an example of the light emitting device disclosed in the embodiment, a light emitting device having two light emitting cells may be disclosed.

The light emitting device disclosed above has been described as a structure having one light emitting cell. In this case, when the light emitting cell includes the light emitting structure, the driving voltage of the light emitting device may be a voltage applied to one light emitting cell. As an example of the light emitting device disclosed in the embodiment, it may include a light emitting device having two or three or more light emitting cells. Accordingly, it is possible to provide a high-voltage light emitting device package.

In addition, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment of the present invention, the body 111 does not need to be exposed to high temperature in the process of manufacturing the light emitting device package. Therefore, according to an embodiment of the present invention, it is possible to prevent the body 111 from being damaged or discolored by exposure to high temperature. Accordingly, a selection range for materials constituting the body 111 can be widened. According to an embodiment of the present invention, the body 111 may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material. For example, the body 115 includes at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin, and SMC (Silicone Molding Compound) resin. can do.

Meanwhile, the light emitting device package according to the embodiment may be applied to a light source device.

In addition, the light source device may include a display device, a lighting device, a head lamp, etc. according to an industrial field.

As an example of the light source device, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light and includes a light emitting device, and is disposed in front of the reflector and guides light emitted from the light emitting module to the front. A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel; It may include a color filter disposed in front. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. Also, the display device may have a structure in which light emitting devices emitting red (Red), green (Gren), and blue (Blue) light are respectively disposed without including a color filter.

As another example of the light source device, the head lamp may be implemented as a light emitting module or a lighting module including a light emitting device package disposed on a substrate, and directs light irradiated from the light emitting module or the lighting module in a certain direction, for example, forward. A reflector that reflects the light, a lens that refracts the light reflected by the reflector forward, and a shade that blocks or reflects a portion of the light reflected by the reflector and directed to the lens to achieve the light distribution pattern desired by the designer may include

A lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply unit, an inner case, and a socket. Also, the light source device according to the embodiment may further include any one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by a person skilled in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

In the above, the embodiment has been mainly described, but this is only an example and does not limit the embodiment, and those of ordinary skill in the art to which the embodiment pertains may find several not illustrated above within the range that does not deviate from the essential characteristics of the present embodiment. It can be seen that variations and applications of branches are possible. For example, each component specifically shown in the embodiment may be implemented by modification. And the differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set in the appended claims.

111: body
120: light emitting device
121,122: bonding unit
130: phosphor layer
140: adhesive layer
150: molding unit
TH1, TH2: Through hole
R1: recess
160: first resin
201: circuit board
211,213: pad
321,323: conductive part

Claims (11)

a light emitting device having first and second bonding portions on the lower portion;
On the lower surface, the upper surface, the protrusion that protrudes higher than the upper surface, the first through hole that penetrates from the upper surface of the protrusion to the lower surface and faces the first bonding part, and the upper surface of the protrusion penetrates from the upper surface to the lower surface and the second bonding part a body having a second through-hole facing the;
an adhesive layer disposed on an upper surface of the body, a side surface of the protrusion, and an upper surface of the light emitting device; and
It includes a molding part disposed on the adhesive layer,
The adhesive layer is disposed between the molding part and the body and between the molding part and the light emitting device, respectively,
The molding part surrounds the perimeter of the light emitting device and the perimeter of the protrusion,
The molding unit includes a plurality of inner side surfaces facing the side surface of the light emitting device. According to claim 1,
The molding part is adhered to the adhesive layer on the upper surface of the body, the side surface of the protrusion, and the upper surface of the light emitting device,
The adhesive layer is a light emitting device package having a rough surface. According to claim 1,
The protrusion includes an extension protrusion protruding toward the inner side surface of the molding unit on the upper side of the protrusion, and a concave concave portion disposed between the extension protrusion and the upper surface of the body,
A light emitting device package in which the adhesive layer and an inner part of the molding part are disposed in the recessed part. 4. The method according to any one of claims 1 to 3,
The molding part has an inclined surface on the lower side of the outer side,
The inclined surface is disposed to face the side surface of the protrusion, and the light emitting device package is disposed lower than the height of the lower surface of the light emitting device. 5. The method of claim 4,
The body is formed of a resin material,
A first resin is included between the light emitting element and the protrusion,
The first resin is disposed between the first and second bonding parts,
and a conductive part filled in the first and second through-holes,
A light emitting device package comprising at least one of a metal part on a surface of each of the first and second through holes and a lower surface of the body, and a conductive protrusion protruding from each of the first and second bonding parts of the light emitting device. delete delete delete delete delete delete

Images