KR102514176B1 - Light emitting device package and light source unit - Google Patents

Abstract

A light emitting device package disclosed in an embodiment of the present invention includes a body having a through hole penetrating from an upper surface to a lower surface; and a light emitting element having a first bonding part and a second bonding part disposed on the through hole, wherein portions of the first and second bonding parts of the light emitting element are disposed in the through hole, and an upper surface area of the through hole is 50% or more of the upper surface area of the light emitting device, and may be smaller than the upper surface area of the light emitting device.

Description

Light emitting device package and light source device {LIGHT EMITTING DEVICE PACKAGE AND LIGHT SOURCE UNIT}

Embodiments of the present invention relate to a light emitting device package, a method for manufacturing a light emitting device package, and a light source device having the same.

An embodiment of the present invention relates to a semiconductor device package, a method for manufacturing a semiconductor device package, and a light source device having the same.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in various ways such as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials are developed in thin film growth technology and device materials to produce red, green, It has the advantage of being able to implement light in various wavelength bands such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material can implement a white light source with high efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when light receiving devices such as photodetectors or solar cells are manufactured using Group 3-5 or Group 2-6 compound semiconductor materials, photocurrent is generated by absorbing light in various wavelength ranges through the development of device materials. By doing so, it is possible to use light in a wide range of wavelengths from gamma rays to radio wavelengths. In addition, such a light-receiving element has advantages of fast response speed, safety, environmental friendliness, and easy control of element materials, so that it can be easily used in power control or ultra-high frequency circuits or communication modules.

Accordingly, the semiconductor device can replace a transmission module of an optical communication means, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, and can replace a fluorescent lamp or an incandescent bulb. Applications are expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

The light emitting device (Light Emitting Device) may be provided as, for example, a p-n junction diode having a characteristic of converting electrical energy into light energy using a group 3-5 element or a group 2-6 element on the periodic table, and a compound semiconductor Various wavelengths can be implemented by adjusting the composition ratio.

For example, nitride semiconductors are of great interest in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, red light emitting devices, and the like using nitride semiconductors are commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, as a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm, in the wavelength range, in the case of a short wavelength, it is used for sterilization and purification, and in the case of a long wavelength, an exposure machine or a curing machine, etc. can be used

Ultraviolet light can be divided into three types in order of wavelength: UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm), and UV-C (200nm ~ 280nm). UV-A (315nm ~ 400nm) area is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit money discrimination, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm ~ 315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as semiconductor devices capable of providing high output are requested, research on semiconductor devices capable of increasing output by applying high power is being conducted.

In addition, in a semiconductor device package, research is being conducted on a method capable of improving light extraction efficiency of the semiconductor device and improving light intensity at the package end. In addition, in a semiconductor device package, research into a method for improving a bonding force between a package electrode and a semiconductor device is being conducted.

In addition, in semiconductor device packages, research is being conducted on ways to reduce manufacturing cost and improve manufacturing yield through process efficiency improvement and structural change.

An embodiment of the present invention may provide a semiconductor device package or light emitting device package in which a through hole of a body is disposed under a semiconductor device or a light emitting device, and portions of two bonding parts of the light emitting device are arranged side by side through the through hole.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which a bonding portion of a light emitting device or a conductive protrusion of a bonding portion is disposed in a through hole of a body in an area overlapping a semiconductor device or light emitting device.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which barrier ribs are disposed between bonding parts or conductive protrusions of light emitting devices disposed in through holes of a body.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which a bonding portion or a conductive protrusion of a light emitting device disposed in the through hole is physically or spatially separated by disposing a barrier rib in a through hole of a body.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package capable of supporting and fixing the device by disposing the first resin between the body and the device.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package capable of supporting and fixing a lower portion of the device by disposing the first resin on the upper portion of the body.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package capable of improving light extraction efficiency and electrical characteristics.

Embodiments of the present invention may provide a semiconductor device package or a light emitting device package capable of reducing manufacturing cost and improving manufacturing yield by improving process efficiency and presenting a new package structure.

An embodiment of the present invention can provide a semiconductor device package or a light emitting device package capable of preventing re-melting from occurring in a bonding area of a semiconductor device package in the process of re-bonding the semiconductor device package to a substrate or the like. there is.

A light emitting device package according to an embodiment of the present invention includes a body having a through hole penetrating from an upper surface to a lower surface; and a light emitting element having a first bonding part and a second bonding part disposed on the through hole, wherein portions of the first and second bonding parts of the light emitting element are disposed in the through hole, and an upper surface area of the through hole is 50% or more of the upper surface area of the light emitting device, and may be smaller than the upper surface area of the light emitting device.

According to an embodiment of the invention, the first conductive protrusion protruding from the first bonding portion toward the lower surface of the body; and a second conductive protrusion protruding from the second bonding portion toward a lower surface of the body, wherein the first and second conductive protrusions may be disposed facing each other in the through hole.

According to an embodiment of the invention, the through hole may include an inclined side surface.

According to an embodiment of the present invention, a barrier rib part disposed in a region between the first and second bonding parts through the inside of the through hole through the lower surface of the body may be included.

According to an embodiment of the present invention, a first conductive part connected to the first bonding part and a second conductive part connected to the second bonding part may be disposed on both sides of the barrier rib part.

According to an embodiment of the invention, it includes a first resin disposed around the light emitting element, the first resin can be attached to the light emitting element to the body.

According to an embodiment of the present invention, first and second metal parts spaced apart from each other may be included on the surface of the through hole.

A light source device according to an embodiment of the present invention includes a circuit board having first and second pads thereon; and first and second conductive portions disposed in the through hole of the light emitting device package, wherein the light emitting device package is disposed on the circuit board, wherein the first conductive portion includes the first pad and the first conductive portion of the light emitting device. The second conductive part is connected to the second pad and the second bonding part of the light emitting device package, and is connected to the lower surface of the light emitting device through the through hole between the first and second pads. A protruding barrier rib portion may be included, and the barrier rib portion may be disposed between the first and second conductive portions.

According to an embodiment of the present invention, it is possible to reduce the distance between pads of a circuit board to which semiconductor elements or light emitting elements are bonded.

According to an embodiment of the present invention, leakage of a conductive material or electrical interference can be prevented by spatially separating the lower bonding members of the light emitting device by the barrier rib portion disposed on the circuit board.

According to an embodiment of the present invention, by connecting the conductive part and the bonding part of the device through the through hole of the body, the adhesive strength and electrical conductivity of the bonding part of the flip chip can be improved.

According to an embodiment of the present invention, the adhesive force and electrical conductivity of the flip chip can be improved by allowing the bonding portion and the conductive portion of the device to be connected to the through hole of the body.

According to an embodiment of the present invention, by disposing the first resin between the lower part of the element and the body, it is possible to improve the adhesive strength and bearing capacity of the element.

According to an embodiment of the invention, there is an advantage of improving light extraction efficiency, electrical characteristics, and reliability.

According to an embodiment of the present invention, there is an advantage of reducing manufacturing cost and improving manufacturing yield by improving process efficiency and presenting a new package structure.

According to an embodiment of the present invention, there is an advantage in preventing a re-melting phenomenon from occurring in a bonding region of a semiconductor device package in a process of re-bonding the semiconductor device package to a substrate or the like.

According to an embodiment of the present invention, reliability of a semiconductor device package or a light emitting device package and a light source device having the same can be improved.

1 is a plan view of a light emitting device package according to a first embodiment of the present invention.
FIG. 2 is a bottom view of the light emitting device package of FIG. 1 .
3 is an AA-side cross-sectional view of the light emitting device package of FIG. 1 .
4 is another example of the light emitting device package of FIG. 3 .
FIG. 5 is an example of a light source device having the light emitting device package of FIG. 3 .
FIG. 6 is a view showing an example corresponding to a partition wall portion and a conductive protrusion of a light emitting element on the circuit board of FIG. 5 .
FIG. 7 is a first modified example of the light emitting device package of FIG. 3 .
FIG. 8 is an exploded perspective view of the light source device having the light emitting device package of FIG. 7 .
FIG. 9 is a second modified example of the light emitting device package of FIG. 3 .
10 is an example of a light source device having a light emitting device package according to the second embodiment.
FIG. 11 is another example of a barrier rib portion on the circuit board of FIG. 10 .
12 is a plan view illustrating an example of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.

An embodiment will be described below with reference to the accompanying drawings. In the description of the embodiment, each layer (film), region, pattern or structure is "on/over" or "under" the substrate, each layer (film), region, pad or pattern. In the case where it is described as being formed in, "on/over" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criterion for the top/top or bottom of each layer will be described based on the drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The semiconductor device of the device package may include a light emitting device that emits light of ultraviolet rays, infrared rays, or visible rays. Hereinafter, a description will be given based on the case where a light emitting element is applied as an example of a semiconductor device, and a package or light source device to which the light emitting element is applied may include a non-light emitting element such as a zener diode or a sensing element for monitoring wavelength or heat. can Hereinafter, a case in which a light emitting device is applied as an example of a semiconductor device will be described, and a light emitting device package will be described in detail.

<First Embodiment>

1 is a plan view of a light emitting device package according to a first embodiment of the present invention, FIG. 2 is a bottom view of the light emitting device package of FIG. 1, FIG. 3 is a cross-sectional view of the light emitting device package of FIG. Another example of the light emitting device package of FIG. 3, FIG. 5 is an example of a light source device having the light emitting device package of FIG. is the drawing shown.

Referring to FIGS. 1 to 6 , the light emitting device package 100 may include a body 110 and a light emitting device 120 .

The body 110 may include a first body 115 and a second body 110A. The second body 110A may be disposed on the first body 115 . The second body 110A may be disposed around the upper circumference of the first body 115 . The second body 110A may provide a cavity 102 above the first body 115 . As an example, the first body 115 and the second body 110A may be integrally formed with each other. As another example, the first body 115 and the second body 110A may be formed separately from each other and then attached or combined. For this coupling, the first body 115 and the second body 110A may have a coupling structure such as a locking groove or/and a locking jaw. When the first body 110A does not exist, the first body 115 may be defined as a body.

The first body 115 may be a body portion supporting a light emitting device, and the second body 110A may be a reflection portion. As another expression, the first body 115 may be referred to as a lower body, and the second body 110A may be referred to as an upper body. Also, according to the embodiment, the body 110 may include only the first body 115 providing a flat upper surface without including the second body 110A providing the cavity 102 . The second body 110A is disposed around the light emitting device 120 and can reflect light emitted from the light emitting device 120 upward. The second body 110A may be inclined with respect to the upper surface of the first body 115 .

The body 110 may include a cavity 102 . The cavity 102 may include a bottom surface and a side surface 132 inclined from the bottom surface to the top surface of the body 110 . The side surface 132 may include a step structure. According to the embodiment, the body 110 may be provided with a structure having a cavity 102, or may be provided with a structure with a flat upper surface without the cavity 102.

For example, the body 110 may be made of a resin material or an insulating resin material. The body 110 includes polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy, epoxy molding compound (EMC), silicone It may be formed of at least one selected from a group including a molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. The body 110 may be formed of a resin material, and may include a filler made of a high refractive index material such as TiO ₂ and SiO ₂ therein. The body 110 may be formed of a thermoplastic resin. The body 110 may include metal oxide in epoxy. The metal oxide may be a filler of a high refractive index material such as TiO ₂ and SiO ₂ .

The length of the light emitting device package 100 in the first direction (X) may be equal to or greater than the length in the second direction (Y). In the following description, a first direction may be an X direction, a second direction may be a Y direction orthogonal to the X direction, and a third direction may be a Z direction orthogonal to the X and Y directions. When the light emitting device 120 has a rectangular shape, the first direction may be a direction of a longer side among sides of the light emitting device 120 . For example, the first direction may be a long side direction of the light emitting device 120, and the second direction may be a short side direction. When the light emitting device 120 has a square shape, sides of the first direction and the second direction may have the same length. In the first direction, both short sides of the light emitting element 120 may be disposed on opposite sides or facing each other, and in the second direction, both long sides of the light emitting element 120 may be disposed on opposite sides or facing each other. there is.

The body 110 may include first and second side surfaces S1 and S2 disposed in a first direction, and third and fourth side surfaces S3 and S4 disposed in a second direction. A distance between the first and second side surfaces S1 and S2 may be the length of the third and fourth side surfaces S3 and S4 in the first direction. The distance between the third and fourth side surfaces S3 and S4 may be the length of the first and second side surfaces S1 and S2 in the first direction.

The body 110 may be formed of an insulating material. Since the body 110 has a structure in which the metal frame is removed from the upper surface or the bottom of the cavity 102, the selection of body materials can be wider than the structure having a metal frame. Since the body 110 is not integrally injected with a metal frame, for example, a lead frame, a metal portion may be provided with a thickness smaller than that of the lead frame. Since the body 110 is not pre-injected with the lead frame, it is easy to change the position of the through hole of the body 110, the shape of the cavity 102, the size of the body 110, or the design change of the package size. can

The thickness t1 of the body 110 may be greater than or equal to 100 micrometers, for example, in the range of 100 to 800 micrometers. The thickness t1 of the body 110 may be the sum of the thickness t2 of the first body 115 and the thickness of the second body 110A, and the thickness of the second body 110A is the light emitting element. (120) thickness or greater. Here, the thickness t2 of the first body 115 may be provided in a range of 400 micrometers or less, for example, 80 to 400 micrometers or 100 to 300 micrometers. When the thickness t2 of the first body 115 is smaller than the above range, the rigidity of the portion having the through hole TH1 may be reduced. reliability may deteriorate.

An upper surface of the second body 110A may be disposed at a position equal to or higher than that of the upper surface of the light emitting device 120 to distribute beam angles of light. In another example, the second body 110A may be removed from the first body 115, and in this case, the light emitting device package may have a light beam angle distribution of 130 degrees or more.

The body 110 may have a through hole TH1. The body 110 may have one or a single through hole TH1. The through hole TH1 may pass through a lower surface from an upper surface of the body 110 disposed below the light emitting element 120 . The through hole TH1 may pass through the lower surface of the upper surface of the first body 115 . The through hole TH1 may penetrate from the bottom of the cavity 102 to the lower surface of the first body 115 . The through hole TH1 may penetrate from the top surface to the bottom surface of the center area of the body 110 .

According to an embodiment, the width or area of the upper region of the through hole TH1 may be smaller than or equal to the width or area of the lower region. For example, as shown in FIG. 3 , the upper width or area of the through hole TH1 may be the same as the lower width or area, and the lower width or area may be greater than the upper width or area as shown in FIG. 7 . When the width or area of the lower portion of the through hole TH1 is large, injection efficiency of the conductive portion to be filled may be improved, and an electrical interference distance between adjacent conductive portions may be increased. As shown in FIG. 7 , the through hole TH1 may be provided in an inclined shape in which a width gradually decreases from a lower area to an upper area. The inner surface of the through hole TH1 may include at least one or two or more of a vertical surface, an inclined surface, or a curved surface.

Referring to FIGS. 1 and 2 , the top view shape of the through hole TH1 may include at least one of a circular shape, an elliptical shape, a polygonal shape, and an atypical shape having straight lines and curves. An upper shape and a lower shape of the through hole TH1 may be the same. As another example, the upper shape and the lower shape of the through hole TH1 may be different. An upper shape and a lower shape of the through hole TH1 may be symmetrical. An upper shape and a lower shape of the through hole TH1 may be asymmetrical. The through hole TH1 may be disposed on the same vertical straight line as the center of the upper shape and the center of the lower shape in at least one of the first direction and the second direction, or may be disposed on different vertical straight lines. For example, the upper and lower shapes of the through hole TH1 may be different from each other, or the upper and lower centers of the through hole TH1 may be disposed at different positions in the first direction.

An upper surface area of the through hole TH1 may be smaller than an upper surface area of the light emitting device 120 . An upper surface area of the through hole TH1 may be smaller than a lower surface area of the light emitting device 120 . An upper surface area of the through hole TH1 may be 50% or more of an upper surface area of the light emitting device 120 . The upper surface area of the through hole TH1 may be in a range of 50% to 85% of the upper surface area of the light emitting device 120 . When the upper surface area of the through hole TH1 is smaller than the above range, it may be difficult to secure an insulation distance between conductive protrusions or bonding parts disposed in the through hole. there is.

The upper surface area of the through hole TH1 may be disposed in a range of 10% to 50%, for example, 10% or more of the bottom area of the cavity 102 . When the upper surface area of the through hole TH1 is greater than the above range, it is difficult to secure reliability because the amount of conductive parts filled in the through hole TH1 increases, and when it is smaller than the above range, it may be difficult to secure an insulation distance.

A width of the through hole TH1 in the lower surface area of the first body 115 may be at least 50 micrometers or more in the first and second directions. The depth of the through hole TH1 may be the same as the thickness t2 of the first body 115 . The depth of the through hole TH1 may be provided with a thickness capable of maintaining stable strength of the first body 115 . The depth of the through hole TH1 of the body 110 may be 400 micrometers or less, for example, 80 to 400 micrometers or 100 to 300 micrometers. Here, the thickness t2 of the first body 115 may be provided in a range of 400 micrometers or less, for example, 80 to 400 micrometers or 100 to 300 micrometers.

The through hole TH1 may be disposed in an area vertically overlapping the area of the light emitting device 120 . An upper length of the through hole TH1 may be provided with the same length in the first direction and the second direction, or may be provided with a longer length in either direction. The lower length of the through hole TH1 may be provided with the same length in the first direction and the second direction, or may be provided with a longer length in either direction. A length ratio between the first direction and the second direction at the top of the through hole TH1 may be the same as the length ratio between the first direction and the second direction of the light emitting element 120 . Accordingly, the through hole TH1 may support a structure protruding from the light emitting device 120 and prevent tilt.

According to an embodiment of the invention, as shown in FIG. 3 , the light emitting device 120 may include a first bonding part 121 , a second bonding part 122 , and a light emitting structure 123 . The light emitting device 120 may include a substrate 124 . The length of the light emitting device 120 in the first direction may be the same as the length in the second direction, or the length in the first direction may be longer than the length in the second direction.

The light emitting structure 123 may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The first bonding part 121 may be electrically connected to the first conductivity type semiconductor layer. The second bonding portion 122 may be electrically connected to the second conductivity type semiconductor layer.

The substrate 124 is a light-transmitting layer and may be formed of an insulating material or a semiconductor material. The substrate 124 may be selected from a group including, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, a concave-convex pattern may be formed on the surface of the substrate 124 . The substrate 124 may be removed.

According to an embodiment of the invention, the light emitting structure 123 may be provided as a compound semiconductor. For example, the light emitting structure 123 may be provided as a Group 2-6 or Group 3-5 compound semiconductor. For example, the light emitting structure 123 includes at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). It can be.

The light emitting structure 123 may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first and second conductivity-type semiconductor layers may be implemented with at least one of group 3-5 or group 2-6 compound semiconductors. The first and second conductivity-type semiconductor layers are, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) can be formed as For example, the first and second conductivity type semiconductor layers may include at least one selected from a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductivity-type semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductivity-type semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The active layer may be implemented as a compound semiconductor. For example, the active layer may be implemented with at least one of Group 3-5 or Group 2-6 compound semiconductors. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers alternately disposed, In _x Al _y Ga _{1 -x- y} N (0≤x≤1 , 0≤y≤1, 0≤x+y≤1) may be arranged as a semiconductor material having a composition formula. For example, the active layer is selected from a group including InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, and InP/GaAs. may contain at least one.

A body 110 may be disposed around the light emitting device 120 . A second body 110A may be disposed around the light emitting device 120 . The light emitting device 120 may be disposed on the body 110 . The light emitting device 120 may be disposed on the first body 115 . The light emitting device 120 may be disposed within the cavity 102 provided by the body 110 . The inner side surface 132 disposed on the outer circumference of the cavity 102 may be inclined or vertical, and for example, the inclined surface may be inclined in one or more steps or two or more steps.

The first bonding part 121 and the second bonding part 122 may be spaced apart from each other on the lower surface of the light emitting device 120 . The first bonding part 121 may be disposed on the body 110 or the first body 115 . The second bonding part 122 may be disposed on the body 110 or the first body 115 . The first and second bonding parts 121 and 122 may face the body 111 or the first body 115 . The first and second bonding parts 121 and 122 may be spaced apart in a first direction. The first and second bonding parts 121 and 122 may be spaced apart from each other in a first direction of the through hole TH1.

The first and second bonding parts 121 and 122 may be electrodes or pads. Accordingly, the light emitting element 120 can be driven by driving power supplied through the first bonding part 121 and the second bonding part 122 . And, the light emitted from the light emitting element 120 can be extracted toward the top of the body 110 or the top of the second body 110A.

The first bonding part 121 may be disposed between the light emitting structure 123 and the body 110 . The second bonding part 122 may be disposed between the light emitting structure 123 and the body 110 . The first bonding part 121 and the second bonding part 122 may include at least one or both of a metal material and a non-metal material. The first and second bonding parts 121 and 122 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru , Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO may be formed by using one or more materials or alloys selected from the group consisting of a single layer or a multi-layer .

The light emitting device 120 may include one or a plurality of light emitting cells therein. The light emitting cell may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected in series to each other within one light emitting device. Accordingly, the light emitting device 120 may have one or a plurality of light emitting cells, and when n light emitting cells are disposed in one light emitting device, it may be driven with n times the driving voltage. For example, when the driving voltage of one light emitting cell is 3V and two light emitting cells are disposed in one light emitting device, each light emitting device can be driven with a driving voltage of 6V. Alternatively, when the driving voltage of one light emitting cell is 3V and three light emitting cells are disposed in one light emitting device, each light emitting device may be driven with a driving voltage of 9V. The number of light emitting cells disposed in the light emitting device 120 may be 1 or 2 to 5.

Meanwhile, the light emitting element 120 may include conductive protrusions 21 and 22 at a lower portion. The conductive protrusions 21 and 22 may be disposed in the through hole TH1. The conductive protrusions 21 and 22 include a first conductive protrusion 21 protruding from the first bonding portion 121 toward the lower surface of the body, and a second conductive protrusion 21 protruding from the second bonding portion 122 toward the lower surface of the body. A conductive protrusion 22 may be included. The first and second conductive protrusions 21 and 22 may contact the first and second conductive parts 221 and 223 shown in FIG. 5, and the first and second pads 211 and 213 of the circuit board 201. ) can be connected to The height or thickness of the first and second conductive protrusions 21 and 22 is smaller than the thickness of the first body 115 to be connected to the conductive parts 221 and 223 injected into the through hole TH1. and face the first and second pads 211 and 213 of the circuit board 201 . The first and second conductive protrusions 21 and 22 may be exposed on the lower surface of the body 111 through the through hole TH1.

The conductive protrusions 21 and 22 may have a column shape, for example, a circular column shape or a polygonal column shape. The conductive protrusions 21 and 22 may include a metal pillar in which a seed layer is disposed on the bonding parts 121 and 122 and protrudes in a pillar shape on the seed layer. The metal pillar may include at least one of Cu, Au, and Ag. The metal column may have a bottom view shape of a circular column or a polygonal column.

The through hole TH1 may face or overlap the first and second bonding parts 121 and 122 of the light emitting device 120 . The first bonding part 121 and the second bonding part 122 are disposed on the through hole TH1, and the outer portions of the first bonding part 121 and the second bonding part 122 are disposed on the through hole ( TH1) can be arranged around the upper part. Accordingly, since the first and second conductive protrusions 21 and 22 are spaced apart from each other within the through hole TH1, shift or tilt of the light emitting element 120 can be prevented.

The maximum distance between the first and second conductive protrusions 21 and 22 may be smaller than the width of the through hole TH1 in the first and second directions in the first and second directions, so that the first and second conductive protrusions 21 and 22 Insertion of (21,22) may be easy. The maximum distance between the first and second conductive protrusions 21 and 22 is 30% or more of the width of the through hole TH1 in the first and second directions in the first and second directions, thereby reducing the interference distance between them. can secure it. The first conductive protrusion 21 may be disposed adjacent to the first side surface S1 of the body 110 based on the center of the through hole TH1. The second conductive protrusion 22 may be disposed adjacent to the second side surface S2 of the body 110 based on the center of the through hole TH1.

As another example, referring to FIG. 4 , the first and second bonding parts 121 and 122 of the light emitting device 120 may be disposed in the through hole TH1 of the light emitting device package. In this case, the conductive protrusions 21 and 22 disposed under the first and second bonding parts 121 and 122 may be removed. The first and second bonding parts 121 and 22 may be disposed lower than the upper surface of the through hole TH1 and protrude into the through hole TH1. The first and second bonding parts 121 and 122 may face each other or be disposed side by side in the through hole TH1. The maximum distance between the first and second bonding parts 121 and 122 may be smaller than the width of the through hole TH1 in the first and second directions in the first and second directions, so that the first and second bonding parts 121 and 122 ) can be easily inserted. The maximum distance between the first and second bonding parts 121 and 122 is 30% or more of the width of the through hole TH1 in the first and second directions in the first and second directions to ensure an interference distance between them. can give The first bonding portion 121 may be disposed adjacent to the first side surface S1 of the body 110 based on the center of the through hole TH1 within the through hole TH1. The second bonding portion 122 may be disposed adjacent to the second side surface S2 of the body 110 based on the center of the through hole TH1 within the through hole TH1. In the structure of FIG. 4 , the light emitting structure 123 of the light emitting device 120 may be disposed to face the upper surface of the body 110 or the first body 115 . The light emitting device 120 may be disposed on the body 110 by having a passivation layer or an insulating layer disposed on the surface thereof to protect the surface of the light emitting structure 123 . A lower edge portion of the light emitting element 120 may be disposed to span the circumference of the through hole TH1.

In the structure of FIGS. 3 and 4 , a member capable of supporting the side of the light emitting device 120 may be further included. For example, the first resin 160 as shown in FIG. 7 may be disposed. The first resin 160 may be bonded to a side surface or/and a bottom surface of the light emitting device 120 and an upper surface of the body 110 . The first resin 160 may be adhered to a side surface or/and a bottom surface of the light emitting device 120 and an upper surface of the first body 115 . The first resin 160 may be attached to the body 110 or the first body 115 so that the light emitting element 120 does not tilt or move. This first resin 160 will be described later.

The light emitting device package 100 according to an embodiment of the present invention may include a molding part 190 . The molding part 190 may be provided on the light emitting device 120 . The molding part 190 may be disposed on the body 110 . The molding part 190 may be disposed in the cavity 102 provided by the second body 110A. The molding part 190 may be disposed to surround the light emitting device 120 .

The molding part 190 may include an insulating material. The molding part 190 may include a transparent insulating material. The molding part 190 may include a wavelength conversion means for receiving light emitted from the light emitting device 120 and providing wavelength-converted light. For example, the molding part 190 may be formed of at least one material selected from a group including phosphors and quantum dots. The light emitting device 120 may emit blue, green, red, white, infrared or ultraviolet light. The phosphor or quantum dot may emit blue, green, or red light. The molding part 190 may not be formed.

The phosphor disposed inside or below the molding part 190 may include a phosphor of a fluoride compound, and may include, for example, at least one of an MGF-based phosphor, a KSF-based phosphor, or a KTF-based phosphor. The phosphors may emit light with different peak wavelengths, and the light emitted from the light emitting device may emit light with different yellow and red peak wavelengths or different red peak wavelengths. One type of the phosphor may include a red phosphor. The red phosphor may have a wavelength range from 610 nm to 650 nm, and the wavelength may have a full width at half maximum of less than 10 nm. The red phosphor may include a fluoride-based phosphor. The fluorite-based phosphors are KSF-based red K ₂ SiF ₆ :Mn _{4 +} , K ₂ TiF ₆ :Mn _{4 +} , NaYF ₄ :Mn _{4 +} , NaGdF ₄ :Mn _{4 +} , K ₃ SiF ₇ :Mn _{4 +} At least one of them may be included. The KSF-based phosphor, for example, may have a composition formula of K _a Si _{1 - c} F _b :Mn ^{4 +} _c , wherein a is 1 ≤ a ≤ 2.5, b is 5 ≤ b ≤ 6.5, and c is 0.001 ≤ c ≤ 0.1 can be satisfied. In addition, the fluorite-based red phosphor may be coated with Mn-free fluoride or further include an organic coating on the phosphor surface or Mn-free fluoride-coated surface to improve reliability at high temperature/high humidity. In the case of the fluorite-based red phosphor as described above, unlike other phosphors, since it can implement a narrow half-width of 10 nm or less, it can be used in high-resolution devices.

The phosphor composition according to the embodiment should basically conform to stoichiometry, and each element may be substituted with another element in each group of the periodic table. For example, Sr can be substituted with alkaline earth (II) group Ba, Ca, Mg, etc., and Y can be substituted with lanthanide group Tb, Lu, Sc, Gd, etc. In addition, Eu, etc. as an activator may be substituted with Ce, Tb, Pr, Er, Yb, etc. according to a desired energy level, and an activator alone or an auxiliary activator may be additionally applied to modify properties.

The quantum dot phosphor may include a II-VI compound or a III-V compound semiconductor, and may emit red light. The quantum dots may be, for example, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In,Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS ₂ , CuInSe ₂ and the like, and combinations thereof.

Referring to FIGS. 5 and 6 , the circuit board 201 may be a printed circuit board (PCB). The circuit board 201 may include at least one of a resin material PCB, a metal core PCB (MCPCB), a flexible PCB (FPCB), and a rigid PCB. In the circuit board 201, an insulating layer or protective layer 215 is disposed on a base layer made of resin or metal, and pads 211 and 213 exposed from the insulating layer or protective layer 215 are disposed. The pads 211 and 213 may electrically connect one or a plurality of light emitting device packages. The insulating layer or protective layer 215 may be made of a solder resist material or a resin material.

Each of the pads 211 and 213 of the circuit board 201 is, for example, at least one selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, and Al. of or alloys thereof. The pads 211 and 213 may be disposed as a first pad 211 and a second pad 213 in an area facing the through hole TH1.

The first pad 211 is disposed to face the first bonding portion 121 or/and the first conductive protrusion 21, and the second pad 212 faces the second bonding portion 122 or/and the first conductive protrusion 21. 2 may be disposed to face the conductive protrusion 22 .

A protective layer 215 may be disposed between the first and second pads 211 and 212 . The protective layer 215 may insulate between the first and second pads 211 and 212 . A barrier rib portion 225 may be disposed on the protective layer 215 disposed between the first and second pads 211 and 212 . The barrier rib portion 225 may be made of an insulating material. The barrier rib portion 225 may have a width in the first direction smaller than the distance between the first and second pads 211 and 212, and a length in the second direction equal to or 80% to 80% of the length of the through hole TH1. It can be in the range of 100%. The height of the barrier rib portion 225 may be 20 micrometers or more, for example, 20 to 70 micrometers or 20 to 40 micrometers. The height of the barrier rib portion 225 may be equal to or greater than 30% of the thickness t2 of the body 110 disposed below the light emitting device 120 . The barrier rib portion 215 functions to divide the through hole TH1 into two spaces, and thus forms the first conductive protrusion 21 and the second conductive protrusion 21 or the first and second bonding parts 121 and 122. They can be spatially separated from each other. The barrier rib portion 225 may be disposed at a height capable of blocking electrical interference between the first and second conductive portions 221 and 223 disposed on both sides of the barrier rib portion 225 within the through hole TH1. The upper end of the barrier rib part 225 is disposed between the lower end of the light emitting element 120, for example, the first and second bonding parts 121 and 122, or the first and second bonding parts 121 and 122 of the light emitting element 120 It can be in contact with the lower surface between them.

The barrier rib portion 225 may be formed of silk screen, photo solder resist (PSR), solder resist (SR), or an insulating polymer material such as PCT or PE (Polyethylene).

The first pad 211 is electrically connected to the first bonding part 121 and/or the first conductive protrusion 21 through the first conductive part 221, and the second pad 213 is It may be electrically connected to the second bonding part 122 or/and the second conductive protrusion 22 through the second conductive part 223 .

An embodiment of the present invention spatially separates the lower electrode member of the light emitting device 120, for example, the first and second conductive protrusions 21 and 22 or the first and second bonding parts 121 and 122 in the light emitting device package 100. Instead, it can be separated using the partition wall portion 225 inserted into the through hole.

Here, looking at the bonding process of the conductive parts 221 and 223, the first and second conductive parts 221 and 223 are made of a liquid material and are located on the first and second pads 211 and 213 of the circuit board 201. After that, the light emitting elements 120 aligned on the circuit board 201 are coupled. At this time, the first conductive part 221 disposed on the first pad 211 is injected into the through hole TH1, and the second conductive part 223 disposed on the second pad 213 is injected into the through hole. (TH1) can be injected. The barrier rib portion 225 disposed in the middle of the through hole TH1 is made of a resin material, so that diffusion of the first and second conductive portions 221 and 223 can be prevented. Accordingly, the barrier rib 225 disposed between the first and second conductive parts 221 and 223 can prevent the liquid conductive paste from spreading and block electrical interference between the first and second conductive parts 221 and 223. can As an example of the invention, the barrier rib portion 225 has been described as an example disposed on the circuit board 201, but may be part of a light emitting device package. The conductive parts 221 and 223 may be part of a light emitting device package.

According to an embodiment of the present invention, flow or diffusion of the conductive parts 221 and 223 can be prevented by the barrier rib part 225 made of resin, and at least one of the conductive protrusions 21 and 22 and the bonding parts 121 and 122 in the through hole TH1. By arranging one, bonding of the conductive parts 221 and 223 can be improved and electrical interference can be blocked. Since the diffusion of the conductive parts 221 and 223 can be suppressed and the conductive parts 221 and 223 have a certain distribution or shape, electrical open problems or heat transfer efficiency deterioration problems due to non-uniform distribution of the conductive parts 221 and 223 can prevent The formation of voids in the through hole TH1 where the conductive parts 221 and 223 are disposed may be suppressed or the amount of voids may be reduced. Alternatively, a void may be included between the conductive parts 221 and 223 or the bonding parts 121 and 122 in the through hole TH1.

The conductive parts 221 and 223 may include one material selected from a group including Ag, Au, Pt, Sn, Cu, and the like, or an alloy thereof. A material constituting the bonding parts 121 and 122 or the pads 211 and 213 and a material of the conductive parts 221 and 222 may be combined by an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , wherein x satisfies the conditions of 0<x<1, y=1-x, x>y can

The bonding parts 121 and 122 of the light emitting element 120 are bonded to the material constituting the conductive parts 221 and 223 during the process of forming the conductive parts 221 and 223 or during the heat treatment process after the conductive parts 221 and 223 are provided, the conductive parts 221 and 223 are formed. Between the parts 221 and 223 and the bonding parts 121 and 122, or between the conductive parts 221 and 223 and the pads 211 and 213, or between the conductive parts 221 and 223 and the bonding parts 121 and 122, an intermetallic compound (IMC) Layers may be formed. For example, the conductive parts 221 and 223 may be formed using conductive paste. The conductive paste may include solder paste, silver paste, and the like, and may be composed of multiple layers composed of different materials or multiple layers or single layers composed of alloys. For example, the conductive parts 221 and 223 may include a Sn-Ag-Cu (SAC) material.

For example, an alloy layer may be formed by bonding between a material constituting the conductive parts 221 and 223 and a metal of the bonding parts 121 and 122 or the pads 211 and 213 or the bonding parts 121 and 122 . Accordingly, the conductive parts 221 and 223 and the bonding parts 121 and 122 or the pads 211 and 213 or the bonding parts 121 and 122 can be physically and electrically stably coupled. The conductive parts 221 and 223 and the alloy layer can be physically and electrically stably coupled. The alloy layer may include at least one intermetallic compound layer selected from a group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by combining a first material and a second material, the first material may be provided from the conductive parts 221 and 223, and the second material may be provided from the bonding parts 121 and 122 or the pads 211 and 213. Alternatively, it may be provided from the conductive protrusions 21 and 22.

According to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, the body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the body 110 from being damaged or discolored due to exposure to high temperatures. Accordingly, it is possible to widen the range of selection of materials constituting the upper body. According to the embodiment, the body 115 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic.

Referring to FIGS. 7 and 8 , the slope Sa of the through hole TH may be disposed in the range of 10 degrees to 80 degrees, thereby improving the injection efficiency of the conductive part onto the outside of the center of the through hole TH1. can give

In addition, since the first resin 160 is disposed around the light emitting element 120, leakage of the molding part 190 can be prevented. Here, a portion of the first resin 160 may flow into the through hole TH1. The first resin 160 may attach the light emitting device 120 to the body 110 . The first resin 160 may include a resin material such as silicone or epoxy. The first resin 160 may include a metal oxide or a filler therein. For example, the first resin 160 may be made of a material containing metal oxides or impurities such as TiO ₂ , SiO ₂ , and Al ₂ O ₃ . The first resin 160 may be dispensed before or after disposing the light emitting device 120 to attach and fix the light emitting device 120 on the body 110 . Accordingly, movement or tilt of the light emitting device 120 can be prevented. In addition, the first resin 160 can fix the light emitting element 120 to the body 110 even if the conductive material bonding the light emitting element 120 is remelted.

The first resin 160 may provide a light diffusing function between the light emitting element 120 and the body 110 when light is emitted to the lower edge of the light emitting element 120 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the first resin 160 provides a light diffusing function, thereby improving light extraction efficiency of the light emitting device package. In addition, the first resin 160 may reflect light emitted from the light emitting device 120 . For example, when the first resin 160 has a reflective function, the first resin 160 may be made of a material containing metal oxides or impurities such as TiO ₂ , SiO ₂ , and Al ₂ O ₃ . can

The first resin 160 may contact the lower and side surfaces of the light emitting device 120 and the body 110 . Here, a recess is disposed on the body 110 so that the first resin 160 can be fixed. The first resin 160 may contact the first and second bonding parts 121 and 122 . The first resin 160 adheres the light emitting element 120 to the body 110, thereby increasing the bearing capacity of the light emitting element 120 and preventing the light emitting element 120 from tilting. can The first resin 160 may provide a stable fixing force between the light emitting device 120 and the body 110 . When the first resin 160 is in contact with the light emitting element 120 and the conductive parts 221 and 223 bonded to the light emitting element 120 on the circuit board 201 shown in FIG. 8 are remelted, the The movement of the light emitting element 120 may be prevented and the light emitting element 120 may be supported. That is, the first resin 160 can prevent the light emitting device 120 from being moved or tilted during the reflow process of the light emitting device package 100 .

FIG. 9 is a second modified example of the light emitting device package of FIG. 3 . The configuration of FIG. 9 may optionally include the configurations disclosed above, and a description of the same configuration will refer to the description disclosed above.

Referring to FIG. 9 , in the light emitting device package, first and second metal parts 111 and 113 may be disposed on opposite surfaces of the through hole TH1. The first and second metal parts 111 and 113 may be provided by separating layers formed through a deposition or plating process by laser scribing. The first and second metal parts 111 and 113 may be disposed to extend from the surface of the through hole TH1 to the lower surface of the body 110 .

The first and second metal parts 111 and 113 may be disposed on opposite sides of the barrier rib part 225 shown in FIG. 8 and bonded to the conductive parts 221 and 223 . In addition, the first and second metal parts 111 and 113 may correspond to the conductive protrusions 21 and 22 inserted into the through hole TH1 or be connected through the conductive parts 221 and 223 . In the structure shown in FIG. 4 , the first and second metal parts 111 and 113 are disposed adjacent to the bonding parts 121 and 122 disposed in the through hole TH1 and may be connected by conductive parts 221 and 223. The first and second metal parts 111 and 113 may improve bonding efficiency of the conductive parts 221 and 223, and thus reduce crack defects of the conductive parts 221 and 223.

An embodiment of the present invention provides a large-area through hole in the body to protrude the lower electrode members of the light emitting device, and spatially separates the electrode members with partition walls on a circuit board to prevent electrical interference between conductive parts. can The electrode member may include the bonding portion and/or the conductive protrusion described above.

10 is an example of a light source device having a light emitting device package according to the second embodiment, and FIG. 11 is another example of the barrier rib portion of FIG. 10 .

Referring to FIG. 10 , the light emitting device package includes a body 315 , an upper body 310A, frames 311 and 313 , a light emitting device 120 , and a molding part 390 .

The body 315 and the upper body 310A are insulating materials, and refer to the body and upper body disclosed above. The frames 311 and 313 may be provided as conductive frames. The conductive frame may be made of a metal such as copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver ( Ag), and may be formed as a single layer or multiple layers. The frames 311 and 313 may be coupled to the body 315 . The thickness of the first and second frames 311 and 313 may be formed in consideration of heat dissipation characteristics and electrical conductivity characteristics, and may be formed in a range of 100 micrometers or more, for example, 100 to 300 micrometers.

The upper body 310A may have a cavity 302 therein, and a light emitting device 120 may be disposed in the cavity 302 . The molding part 390 refers to the molding part disclosed above. The first bonding part 121 of the light emitting element 120 may be bonded to and electrically connected to the first frame 311, and the second bonding part 122 may be bonded and electrically connected to the second frame 313. there is. The configuration of the light emitting device 120 will be referred to the description of the first embodiment.

A first conductive portion 221 and a second conductive portion 223 are disposed on the circuit board 201, and a barrier rib portion 225 is disposed between the first and second conductive portions 221 and 223, so that the two conductive portions ( 221,223) can be spatially or physically separated. Accordingly, the distance between the protective layer 214 disposed between the first and second pads 9211 and 213 may be reduced. That is, the conductive parts 221 and 223 can be diffused by the pressure applied when the light emitting device package 300 is mounted. It can block, so it can block the electrical short problem.

As shown in FIG. 11 , a first barrier rib portion 225 and a second barrier rib portion 227 may be included on the circuit board 201 . The first barrier rib portion 225 may be the barrier rib portion disclosed above. The second partition wall part 227 may be made of the same material as the first partition wall part 225 .

The second partition wall portion 225 may be disposed along lower circumferences of the first and second frames 311 and 313 . The second partition wall part 227 may be connected to the first partition wall part 225 at an end in the second direction.

The first and second conductive parts 221 and 223 are disposed in the region between the first and second partition walls 225 and 227 to prevent the conductive parts 221 and 223 from spreading in the lateral direction. The first and second partition walls 225 and 227 serve as dams for the conductive parts 221 and 223 to prevent diffusion due to pressure applied when the light emitting device package 300 is mounted, thereby securing a predetermined thickness. can Accordingly, it is possible to prevent a problem in which the thickness of the conductive parts 221 and 223 is reduced and cracks are generated.

12 is a cross-sectional view showing an example of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.

Referring to FIG. 12 , the light emitting device conceptually illustrates only the relative arrangement relationship between the first electrode 627 and the second electrode 628 . The first electrode 627 may include a first bonding portion 621 and a first branch electrode 625 . The second electrode 628 may include a second bonding portion 622 and a second branch electrode 626 .

The light emitting device may include a light emitting structure 623 disposed on a substrate 624 . The substrate 624 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 624 may be provided as a patterned sapphire substrate (PSS) having a concavo-convex pattern formed on an upper surface thereof.

The light emitting structure 623 may include a first conductivity type semiconductor layer 623a, an active layer 623b, and a second conductivity type semiconductor layer 623c. The active layer 623b may be disposed between the first conductivity type semiconductor layer 623a and the second conductivity type semiconductor layer 623c. For example, the active layer 623b may be disposed on the first conductivity-type semiconductor layer 623a, and the second conductivity-type semiconductor layer 623c may be disposed on the active layer 623b.

According to an embodiment, the first conductivity-type semiconductor layer 623a may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 623c may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity type semiconductor layer 623a may be provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 623c may be provided as an n-type semiconductor layer.

The light emitting device may include a first electrode 627 and a second electrode 628 . The first electrode 627 may include a first bonding portion 621 and a first branch electrode 625 . The first electrode 627 may be electrically connected to the second conductivity type semiconductor layer 623c. The first branch electrode 625 may be disposed to be branched from the first bonding part 621 . The first branch electrode 625 may include a plurality of branch electrodes branched from the first bonding part 621 . The second electrode 628 may include a second bonding portion 622 and a second branch electrode 626 . The second electrode 628 may be electrically connected to the first conductivity type semiconductor layer 623a. The second branch electrode 626 may be disposed to be branched from the second bonding part 622 . The second branch electrode 626 may include a plurality of branch electrodes branched from the second bonding part 622 .

The first branch electrodes 625 and the second branch electrodes 626 may be alternately arranged in a finger shape. Power supplied through the first bonding part 621 and the second bonding part 622 by the first branch electrode 625 and the second branch electrode 626 is transmitted to the light emitting structure 623 as a whole. It can be spread and provided.

The first electrode 627 and the second electrode 628 may be formed in a single-layer or multi-layer structure. For example, the first electrode 627 and the second electrode 628 may be ohmic electrodes. For example, the first electrode 627 and the second electrode 628 may be ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni , Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, or at least one or an alloy of two or more of these materials.

Meanwhile, a protective layer may be further provided on the light emitting structure 623 . The protective layer may be provided on an upper surface of the light emitting structure 623 . Also, the protective layer may be provided on a side surface of the light emitting structure 623 . The protective layer may be provided to expose the first bonding portion 621 and the second bonding portion 622 . In addition, the protective layer may be selectively provided on the circumference and the lower surface of the substrate 624 .

For example, the protective layer may be provided with an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y It may be formed of at least one material selected from the group including.

In the light emitting device according to the embodiment, light generated in the active layer 623b may be emitted in directions of six surfaces of the light emitting device. Light generated in the active layer 623b may be emitted in six directions through the upper and lower surfaces of the light emitting device and four side surfaces.

As another example of the light emitting device, at least one of the first electrode and the second electrode may be implemented in a pattern form, and a conductive protrusion may be disposed on the pattern form electrode. The pattern may include a pattern having one or a plurality of arm shapes or branch shapes. Alternatively, conductive protrusions may be disposed on each bonding portion of the light emitting device. The light emitting device has been described as a structure having one light emitting cell. When the light emitting cell includes the above light emitting structure, the driving voltage of the light emitting device may be the voltage applied to one light emitting cell. As an example of the light emitting device disclosed in the embodiment, a light emitting device having two light emitting cells may be disclosed.

The light emitting device disclosed above has been described as a structure having one light emitting cell. When the light emitting cell includes the above light emitting structure, the driving voltage of the light emitting device may be the voltage applied to one light emitting cell. As an example of the light emitting device disclosed in the embodiment, a light emitting device having two or three or more light emitting cells may be included. Accordingly, a high voltage light emitting device package can be provided.

In addition, according to the light emitting device package and the light emitting device package manufacturing method according to an embodiment of the present invention, the body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to an embodiment of the present invention, it is possible to prevent the body 110 from being damaged or discolored due to exposure to high temperatures. Accordingly, the range of choices for materials constituting the body 110 can be widened. According to an embodiment of the present invention, the body 110 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic. For example, the body 115 includes at least one material selected from the group consisting of PolyPhtal Amide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, Epoxy Molding Compound (EMC) resin, and Silicone Molding Compound (SMC) resin. can do.

Meanwhile, the light emitting device package according to the embodiment may be applied to a light source device.

In addition, the light source device may include a display device, a lighting device, a head lamp, and the like according to industrial fields.

As an example of the light source device, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module including a light emitting element that emits light, and a light emitting module disposed in front of the reflector and guiding light emitted from the light emitting module forward. A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying image signals to the display panel, A color filter disposed on the front side may be included. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. In addition, the display device may have a structure in which light emitting elements emitting red, green, and blue light are respectively disposed without including a color filter.

As another example of the light source device, the headlamp may be implemented as a light emitting module including a light emitting device package disposed on a substrate or a lighting module, and directs light emitted from the light emitting module or the lighting module in a certain direction, for example, forward. A reflector that reflects light forward, a lens that refracts the light reflected by the reflector forward, and a shade that blocks or reflects a part of the light reflected by the reflector and directed to the lens to form a light distribution pattern desired by the designer. can include

A lighting device, which is another example of a light source device, may include a cover, a light source module, a radiator, a power supply unit, an inner case, and a socket. Also, the light source device according to the embodiment may further include at least one of a member and a holder. The light source module may include a light emitting device package according to an embodiment.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified with respect to other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to these combinations and variations should be interpreted as being included in the scope of the embodiments.

Although the above has been described centering on the embodiment, this is only an example and is not intended to limit the embodiment, and those skilled in the art to which the embodiment belongs may find various things not exemplified above to the extent that they do not deviate from the essential characteristics of the present embodiment. It will be appreciated that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

110: body
110A: second body
115: first body
120: light emitting element
121,122: bonding unit
TH1: through hole
160: first resin
201: circuit board
211,213: pad
221,223: conductive part
225: partition wall

Claims (8)

a body having a cavity and a through hole extending from the bottom of the cavity to the lower surface;
a light emitting element disposed on the bottom of the cavity and having a first bonding part and a second bonding part;
a first resin disposed on the bottom of the cavity and around the light emitting device;
a first conductive protrusion protruding from the first bonding portion toward the lower surface of the body; and
And a second conductive protrusion protruding from the second bonding portion toward the lower surface of the body,
The first and second conductive protrusions are disposed facing each other in the through hole,
The light emitting element vertically overlaps the through hole,
Part of the first and second bonding parts of the light emitting device are disposed inside the through hole,
An area of the through hole exposed at the bottom of the cavity is 50% or more of an area of an upper surface of the light emitting device and smaller than an area of an upper surface of the light emitting device. delete According to claim 1,
An area of the through hole exposed on the bottom of the cavity is larger than an area of the through hole exposed on the lower surface of the body,
The light emitting device package of claim 1 , wherein the through hole includes a side surface inclined from a bottom of the cavity toward a lower surface of the body. According to claim 1 or 3,
A partition wall part extending from the lower part of the through hole toward the bottom of the cavity and disposed in an area between the first and second bonding parts, and a first part connected to each of the first and second bonding parts disposed on both sides of the partition wall part. and a second conductive part. According to claim 1 or 3,
A light emitting device package including first and second metal parts spaced apart from each other on a surface of the through hole and connected to the first and second bonding parts, respectively. delete delete delete

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