KR20190140567A - Light emitting device package and light unit - Google Patents

Abstract

The present invention relates to a light emitting element package which increases light extraction efficiency, electrical characteristics, and reliability. The light emitting element package comprises: a first frame and a second frame; a body including a through hole arranged between the first frame and the second frame and passing through an upper surface and a lower surface; a light emitting element including a first bonding unit facing the first frame and a second bonding unit facing the second frame; a first resin arranged between the light emitting element and the body; and a second resin surrounding a circumference of the first resin and the first and second bonding units. The first resin can be extended from an upper surface of the first and second frames into the through hole of the body.

Description

Light emitting device package and light source device {LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT}

The embodiment relates to a light emitting device package, a semiconductor device package, a method of manufacturing a semiconductor device package, and a light source device.

A semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy to adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.

Particularly, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or 2-6 compound semiconductor materials have been developed using thin film growth technology and device materials. There is an advantage that can implement light of various wavelength bands such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3 to 5 or 2 to 6 group compound semiconductor material may implement a white light source having high efficiency by using a fluorescent material or combining colors. Such a light emitting device has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving device such as a photodetector or a solar cell is also fabricated using a Group 3-5 Group 2 or Group 6 compound semiconductor material, development of device materials absorbs light in various wavelength ranges to generate a photocurrent. As a result, light in various wavelengths can be used from gamma rays to radio wavelengths. In addition, such a light receiving device has the advantages of fast response speed, safety, environmental friendliness and easy control of the device material, so that it can be easily used in power control or microwave circuits or communication modules.

Therefore, the semiconductor device may replace a light emitting diode backlight, a fluorescent lamp, or an incandescent bulb, which replaces a cold cathode tube (CCFL) constituting a backlight module of an optical communication means, a backlight of a liquid crystal display (LCD) display device. Applications are expanding to include white light emitting diode lighting devices, automotive headlights and traffic lights, and sensors that detect gas or fire. In addition, the semiconductor device may be extended to high frequency application circuits, other power control devices, and communication modules.

The light emitting device may be provided as a pn junction diode having a characteristic in which electrical energy is converted into light energy using, for example, a group 3-5 element or a group 2-6 element on the periodic table. Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet light emitting device, a red light emitting device using a nitride semiconductor, and the like are commercially used and widely used.

For example, in the case of an ultraviolet light emitting device, a light emitting diode which emits light distributed in a wavelength range of 200 nm to 400 nm, and is used in the wavelength band, for short wavelengths, for sterilization and purification, and for long wavelengths, an exposure machine or a curing machine. Can be used.

 Ultraviolet rays can be classified into UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm), and UV-C (200nm ~ 280nm) in order of long wavelength. The UV-A (315nm ~ 400nm) area is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, forgery discrimination, photocatalyst sterilization, special lighting (aquarium / agriculture, etc.), and UV-B (280nm ~ 315nm). ) Area is used for medical purposes, UV-C (200nm ~ 280nm) area is applied to air purification, water purification, sterilization products.

Meanwhile, as a semiconductor device capable of providing a high output is requested, research on a semiconductor device capable of increasing output by applying a high power source is being conducted.

In addition, in the semiconductor device package, research has been conducted on a method of improving light extraction efficiency of the semiconductor device and improving brightness at the package end. In addition, in the semiconductor device package, research is being conducted to improve the bonding strength between the package electrode and the semiconductor device.

In addition, in the semiconductor device package, research has been conducted on a method for reducing manufacturing cost and improving manufacturing yield by improving process efficiency and structural change.

An embodiment of the present invention provides a light emitting device package, a semiconductor device package and a method of manufacturing the through-hole and the first resin is disposed in the body between the frames facing each other.

An embodiment of the present invention provides a light emitting device package, a semiconductor device package, and a method of manufacturing the light emitting device disposed on the frames and covering the surface of the light emitting device and the frame with a molding part.

An embodiment of the present invention provides a light emitting device package, a semiconductor device package, and a method of manufacturing the same, which are covered with a molding unit around the light emitting device and the frame.

An embodiment of the present invention provides a light emitting device package, a semiconductor device package and a method of manufacturing the second resin resin is disposed around the bottom of the light emitting device.

An embodiment of the present invention can provide a semiconductor device package, a light emitting device package, a semiconductor device package manufacturing method, a light source device that can improve the process efficiency of the package and propose a new package structure to reduce the manufacturing cost and improve the manufacturing yield have.

An embodiment of the present invention provides a semiconductor device package, a light emitting device package, and a semiconductor device capable of preventing re-melting from occurring in a bonding area of the semiconductor device package while the semiconductor device package is rebonded to a substrate. A package manufacturing method can be provided.

The light emitting device package according to the embodiment of the present invention, the first frame and the second frame; A body disposed between the first frame and the second frame and including a through hole passing through an upper surface and a lower surface; A light emitting device including a first bonding part facing the first frame and a second bonding part facing the second frame; A first resin disposed between the light emitting element and the body; And a second resin surrounding a circumference of the first resin and the first and second bonding parts, wherein the first resin may extend into the through hole of the body from upper surfaces of the first and second frames.

According to an embodiment of the present disclosure, a portion of the second resin may overlap with the light emitting device in a vertical direction.

According to an embodiment of the present invention, upper surfaces of the first frame and the second frame may be disposed on the same horizontal surface as the upper surface of the body, and the through hole may have a length smaller than the length of one side of the light emitting device.

According to an embodiment of the present disclosure, the first bonding protrusion may protrude in the first frame direction, and the second bonding protrusion protrude in the second frame direction. .

According to an embodiment of the present invention, the light emitting device and a molding part on the first and second frames; And a third resin between the molding part and the first and second frames, and an upper surface of the third resin may be lower than a lower surface of the light emitting device.

According to an embodiment of the present invention, the first and second resins may have the same thickness.

According to an embodiment of the present invention, the thickness of the first and second resins may be a gap between the lower surface of the light emitting device and the upper surface of the first and second frames.

According to an embodiment of the invention, the second resin may protrude from the body.

A light source device according to an embodiment of the present invention includes a circuit board; And one or a plurality of light emitting device packages on the circuit board.

According to an embodiment of the present invention, the transparent molding part surrounds the upper part of the frame and the light emitting device to increase the direct angle distribution of light.

According to an embodiment of the present invention, the molding part may cover the upper part of the frame in which the light emitting elements are disposed, thereby improving the distribution of the direct angle.

According to the embodiment of the present invention, the bonding portion disposed below the light emitting device is bonded to the frame, thereby improving the bearing capacity of the light emitting device and improving heat dissipation characteristics and heat conduction characteristics.

According to the embodiment of the present invention, by bonding the bonding portion and the frame disposed on the lower portion of the light emitting device with the first resin, it is possible to improve the holding capacity of the light emitting device and to improve heat dissipation characteristics and heat conduction characteristics.

According to an embodiment of the present invention, the first resin may be prevented from covering the side surface of the light emitting device by injecting the first resin into the body through the through hole.

According to the embodiment of the present invention, there is an advantage to improve light extraction efficiency, electrical characteristics and reliability.

According to the embodiment of the present invention, the tilt of the light emitting device can be prevented.

According to an embodiment of the present invention, the light emitting device is bonded with a resin, thereby preventing the problem of remelting the light emitting device by external heat.

According to the embodiment of the present invention, there is an advantage of improving manufacturing efficiency and presenting a new package structure to reduce manufacturing cost and improve manufacturing yield.

According to an embodiment of the present invention, by providing a body having a high reflectance or a high absorptivity, it is possible to prevent the body from being discolored, thereby improving the reliability of the semiconductor device package.

According to an exemplary embodiment of the present invention, re-melting may be prevented from occurring in the bonding region of the semiconductor device package while the device package is rebonded to the substrate.

1 is a plan view of a light emitting device package according to an exemplary embodiment of the present invention.
2 is a cross-sectional view taken along the AA side of the light emitting device package of FIG. 1.
3 is a first modified example of the light emitting device package of FIG. 2.
4 is a second modified example of the light emitting device package of FIG. 2.
FIG. 5 is a third modified example of the light emitting device package of FIG. 2.
6 is an enlarged view illustrating the space between the first resin and the frame in the light emitting device package of FIGS. 2 to 5.
FIG. 7 is a fourth modified example of the light emitting device package of FIG. 2.
8 is a fifth modified example of a light emitting device package according to an embodiment of the present invention.
9 is a modification of the frame of the light emitting device package according to the embodiment of the present invention.
10 and 11 illustrate a process of injecting the first resin into the package body.
12 is an example of a light source device having the light emitting device package of FIG. 2.
13 is a cross-sectional view showing an example of a light emitting device applied to the light emitting device package according to an embodiment of the present invention.

Embodiments of the invention will be described with reference to the accompanying drawings. In the description of embodiments of the invention, each layer, region, pattern, or structure may be “on / over” or “under” the substrate, each layer, region, pad, or pattern. "On / over" and "under" are defined as being "directly" or "indirectly" through another layer. It includes everything. In addition, the criteria for the top / top or bottom of each layer will be described based on the drawings, but the embodiment is not limited thereto.

A semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the present invention, the device package may include a semiconductor device or a light emitting device that emits light of ultraviolet rays, infrared rays, or visible light. Hereinafter, a description will be given based on a case in which a light emitting device is applied as an example of a semiconductor device. The light emitting device may include a non-light emitting device such as a zener diode or a sensing device that monitors a wavelength or heat. Can be. Hereinafter, a description will be given based on a case where a light emitting device is applied as an example of a semiconductor device, and the light emitting device package will be described in detail.

1 is a plan view of a light emitting device package according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view of the light emitting device package of FIG.

1 and 2, the light emitting device package 100 may include a package body 110, a light emitting device 120, and a molding unit 190.

The light emitting device package 100 may have a length in the first direction X equal to or greater than a length in the second direction Y. FIG. The length of the first direction X of the package body 110 may be equal to or greater than the length of the second direction Y. FIG. In the following description, the first direction may be an X direction, the second direction may be a Y direction orthogonal to the X direction, and the third direction may be a Z direction orthogonal to the X and Y directions. The first direction may be a direction of a longer side of the sides of the light emitting device 120. For example, the first direction may be a long side direction of the light emitting device 120, and the second direction may be a short side direction. Both short sides of the light emitting device 120 may be disposed opposite to each other in the first direction, and both long sides of the light emitting device 120 may be disposed opposite to each other in the second direction. The light emitting device 120 may have a rectangular shape or a regular rectangular shape.

The molding part 190 may include first and second side surfaces S1 and S2 disposed in a first direction, and third and fourth side surfaces S3 and S4 disposed in a second direction. An interval between the first and second side surfaces S1 and S2 may be a length in a first direction of the third and fourth side surfaces S3 and S4. An interval between the third and fourth side surfaces S3 and S4 may be a length in the first direction of the first and second side surfaces S1 and S2.

The package body 110 may include a plurality of frames. The plurality of frames may include at least two frames or three or more frames. The plurality of frames may include, for example, a first frame 111 and a second frame 113. For convenience of description, the plurality of frames will be described as two frames. The first frame 111 and the second frame 113 may be spaced apart from each other in the first direction (X).

Each side surface of the first and second frames 111 and 113 may be disposed on a vertical plane such as each side surface S1, S2, S3, and S4 of the molding unit 190. Each side of the package body 110 may be disposed on a vertical plane such as each side (S1, S2, S3, S4) of the molding portion 190. The upper surface area of the region connecting the outermost portions of the first and second frames 111 and 1113 may be the same as the upper surface area of the molding part 190.

The package body 110 may include a body 115. The body 115 may be disposed between the plurality of frames 111 and 113. The body 115 may be combined with a plurality of frames 111 and 113. The body 115 may be disposed around the frames 111 and 113. The body 115 may be disposed between the first frame 111 and the second frame 113. The body 115 may function as an electrode separation line between the first and second frames 111 and 113. The body 115 may also be referred to as an insulating member. The body 115 may be provided to have the same thickness as the thickness t1 of the first and second frames 111 and 113.

The upper surface of the body 115 may be disposed on the same horizontal surface as the upper surfaces of the first frame 111 and the second frame 113. According to the embodiment of the present invention, since the members reflecting in the first and second directions on the upper portions of the frames 111 and 113 are not disposed, the direct angle distribution of the light emitted from the light emitting device 120 may be increased. The body 115 may extend between the first and second frames 111 and 113 to be coupled to the first and second frames 111 and 113 at an end portion of the second direction. Upper and lower surfaces of the body 115 may be exposed to upper and lower surfaces of the first and second frames 111 and 113, and side surfaces of the first and second frames 111 and 113 may be exposed in the second direction of the first and second frames 111 and 113. May be exposed.

For example, the body 115 may be a resin material or an insulating resin material. The body 115 is polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Triphenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy, epoxy molding compound (EMC: epoxy molding compound), silicone It may be formed of at least one selected from the group consisting of molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ) and the like. The body 115 may be formed of a resin material, and may include a metal oxide or a filler of a high refractive material such as Al ₂ O ₃ , TiO _2, and SiO ₂ . The body 115 may be formed of, for example, a thermoplastic resin. Since the thermoplastic resin is a material that recedes when heated, and hardens again when cooled, the frames 111 and 113 and the materials that contact the frames expand or contract due to heat. When the body 115 may act as a buffer. In the package, the coefficient of thermal expansion (CTE) according to thermal expansion and contraction by the frames 111 and 113 may be greater than the thermal expansion coefficient in the first direction.

As another example, the body 115 may include a carbon mixed black resin, and for example, may be formed of black polyphtalamide (PPA), black epoxy, black epoxy mold compound (EMC), or black silicon. have. Since the body 115 is provided as a body having a black color, the body 115 absorbs incident light, thereby improving visibility of the light.

Meanwhile, the first frame 111 and the second frame 113 may be provided as, for example, conductive frames. The conductive frame may be made of metal such as copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver ( Ag), and may be formed in a single layer or multiple layers. The thickness t1 of the first and second frames 111 and 113 may be formed in consideration of heat dissipation characteristics and electrical conduction characteristics, and may be formed in a range of 100 micrometers or more, for example, 100 to 300 micrometers.

The first frame 111 and the second frame 113 may be provided as a metal frame. The first frame 111 and the second frame 113 may stably provide structural strength of the package body 110, and may be electrically connected to the light emitting device 120. The first and second frames 111 and 113 may have a multi-layered structure, for example, a first layer made of Ag, a second layer made of Cu on the first layer, and a third layer made of Ag on the second layer. It may include. The first layer may be an anti-oxidation and bonding layer, and the second layer may be thicker than the first and third layers for heat conduction, and the third layer may be disposed for anti-oxidation and reflection.

The light emitting device 120 may be disposed on the first frame 111, the body 115, and the second frame 113. Since the light emitting device 120 is disposed above the upper surfaces of the body 115 and the first and second frames 111 and 113, the direction angle distribution of the light emitted from the light emitting device 120 may be improved.

The first and second frames 111 and 113 may include a top surface, a bottom surface opposite to the top surface, and a plurality of side surfaces. The light emitting device 120 may be disposed on the first and second frames 111 and 113. Lower surfaces of the first and second frames 111 and 113 may be exposed from the body 115. Sides of the frames 111 and 113 may include an inner side contacting the body 115 and an outer side spaced apart from the body 115. The outer surfaces of the frames 111 and 113 may be in non-contact with the body 115 or disposed outside the side surfaces of the body 115. Outer side surfaces of the frames 111 and 113 may be exposed from the body 115. The outer side surfaces of the frames 111 and 113 may be disposed on the same vertical plane as the side surfaces of the molding part 190.

Since the lengths of the first and second frames 111 and 113 in the second direction are the same as those of the body 115, the heat transfer efficiency in the second direction may be improved. Accordingly, deformation of the body in the horizontal direction due to the difference in thermal expansion coefficient between the first frame 111, the second frame 113 and the body 115 can be suppressed. Accordingly, it is possible to prevent an interface separation problem between the body 115 and the frames 111 and 113.

As another example, in order to improve the coupling structure between the body 115 and the frames 111 and 113, the body 115 disposed between the first and second frames 111 and 113 may have a lower upper width in the first direction. It may be less than the width. The upper surface area of the body 115 disposed between the first and second frames 111 and 113 may be smaller than the lower surface area. The upper surface area of the first frame 111 may be larger than the lower surface area. The upper surface area of the second frame 113 may be larger than the lower surface area. The sum of the upper surface areas of the first and second frames 111 and 113 may be smaller than the upper surface area of the molding part 190. The body 115 is disposed along the second direction of the first and second frames 111 and 113 and is in contact with the inner surfaces of the first and second frames 111 and 113, so that the first and second parts are small. The frames 111 and 113 may be supported.

1 and 2, the body 115 may include a through hole TH1. The through hole TH1 may be disposed in the body 115 and spaced apart from the first and second frames 111 and 113. The through hole TH1 may be disposed in a direction perpendicular to the body 115. The through hole TH1 may penetrate from an upper surface to a lower surface of the body 115. The top view shape of the through hole TH1 may be circular, elliptical or polygonal. The through hole TH1 may overlap the light emitting device 120 in a vertical direction. An inner region of the body 115, the through hole TH1, and the first and second frames 111 and 113 may overlap with the light emitting device 120 in a vertical direction. The height of the through hole TH1 may be a depth from upper surfaces to lower surfaces of the first and second frames 111 and 113 or a thickness t1 from upper surfaces to lower surfaces of the body 115. The first direction width of the through hole TH1 may be smaller than the distance between the first and second frames 111 and 113, and the length of the second direction may be smaller than the length of the second direction of the light emitting device 120. The length of the through hole TH1 may be smaller than the length of one side of the light emitting device 120. When the first direction width of the through hole TH1 is larger than the distance between the first and second frames 111 and 113, the bearing force of the first and second frames 111 and 113 may be lowered, and the length of the second direction may be reduced. Is larger than the above range, a problem may occur in which the first resin 160 leaks to the outside of the light emitting device 120.

According to the embodiment of the present invention, as shown in FIG. 2, the light emitting device 120 may include a first bonding part 121, a second bonding part 122, and a light emitting structure 123. The light emitting device 120 may include a substrate 124 on the light emitting structure 123. The light emitting device 120 may have a length in a first direction equal to a length in a second direction or a longer length in the first direction.

The light emitting structure 123 may include a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first bonding part 121 may be electrically connected to the first conductive semiconductor layer. In addition, the second bonding part 122 may be electrically connected to the second conductivity type semiconductor layer.

The substrate 124 is a light transmitting layer and may be formed of an insulating material or a semiconductor material. The substrate 124 may be selected from a group including, for example, sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge. For example, an irregular pattern may be formed on a surface of the substrate 124.

In example embodiments, the light emitting structure 123 may be provided as a compound semiconductor. The light emitting structure 123 may be provided as a group 2-6 or 3-5 compound semiconductor. For example, the light emitting structure 123 may include at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). Can be.

The light emitting structure 123 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first and second conductivity-type semiconductor layers may be implemented as at least one of a compound semiconductor of Groups 3-5 or 2-6. The first and the semiconductor material having a composition formula of the second conductivity type semiconductor layer is, for example _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be formed as. For example, the first and second conductivity-type semiconductor layers may include at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductive semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, Te, or the like. The second conductive semiconductor layer may be a p-type semiconductor layer doped with p-type dopants such as Mg, Zn, Ca, Sr, and Ba.

The active layer may be implemented with a compound semiconductor. The active layer may be implemented as at least one of a compound semiconductor of Group 3-Group 5 or Group 2-6, for example. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers that are alternately arranged, and In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1 , 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). For example, the active layer is selected from the group comprising InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, InP / GaAs. It may include at least one.

The first conductive semiconductor layer may be disposed between the substrate 124 and the active layer. The second conductive semiconductor layer may be disposed between the active layer and the bonding parts 121 and 122.

The light emitting device 120 may be disposed on the first frame 111 and the second frame 113. The light emitting device 120 may be disposed on inner regions of the first and second frames 111 and 113 adjacent to the through hole TH1. The light emitting device 120 may be disposed on the body 115. A protection device may be disposed above or below any one of the first and second frames 111 and 113.

The first bonding part 121 and the second bonding part 122 may be spaced apart from each other based on a direction in which the body 115 is disposed on a lower surface of the light emitting device 120. The first bonding part 121 may be disposed on the first frame 111. The second bonding part 122 may be disposed on the second frame 113.

In the light emitting device package 100 according to an embodiment of the present invention, power is connected to the first bonding part 121 of the light emitting device 120 through the first frame 111, and the second frame 113 is connected to the light emitting device package 100. Power may be connected to the second bonding part 122 of the light emitting device 120 through the power supply. The first and second bonding parts 121 and 122 may be electrodes or pads. Accordingly, the light emitting device 120 may be driven by driving power supplied through the first bonding part 121 and the second bonding part 122. In addition, the light emitted from the light emitting device 120 may be provided in an upper direction of the package body 110.

The first bonding part 121 may be disposed between the light emitting structure 123 and the first frame 111. The second bonding part 122 may be disposed between the light emitting structure 123 and the second frame 113. The first bonding part 121 and the second bonding part 122 may be made of metal. The first and second bonding parts 121 and 122 may include Cu, Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Can be formed in a single layer or multiple layers using one or more materials or alloys selected from the group consisting of Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO have.

The light emitting device 120 may include one or a plurality of light emitting cells therein. The light emitting cell may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected in series with each other in one light emitting device. Accordingly, the light emitting device may have one or a plurality of light emitting cells, and when n light emitting cells are disposed in one light emitting device, the light emitting device may be driven at a driving voltage of n times. For example, when the driving voltage of one light emitting cell is 3V and two light emitting cells are arranged in one light emitting device, each light emitting device may be driven at a driving voltage of 6V. Alternatively, when the driving voltage of one light emitting cell is 3V and three light emitting cells are arranged in one light emitting device, each light emitting device may be driven at a driving voltage of 9V. The number of light emitting cells arranged in the light emitting device may be one or two to five.

As another example, the first and second frames 111 and 113 may be alternately disposed in a first direction or a second direction, and each light emitting device may be disposed on the alternately arranged first and second frames 111 and 113. 120 may be disposed. The light emitting devices 120 may be connected in series with each other or may be arranged in parallel. The molding part 190 may be disposed on the plurality of first and second frames 111 and 113 and the body 115 coupled thereto.

A first conductive protrusion P11 may be disposed below the first bonding portion 121, and a second conductive protrusion P12 may be disposed below the second bonding portion 122. The first and second conductive protrusions P11 and P12 may protrude from the first and second bonding parts 121 and 122 in the direction of the first and second frames 111 and 113.

The first and second conductive protrusions P11 and P12 may include a metal, for example, at least one of Cu, Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, or these. It may include an alloy of. The first and second conductive protrusions P11 and P12 may be a single layer or a multilayer, and any one layer may have a Cu material of 80% or more. The conductive protrusions P11 and P12 may be removed when the thicknesses of the first and second bonding parts 121 and 122 are thick.

The first and second conductive protrusions P11 and P12 may protrude from the light emitting device 120 in the direction of the first and second frames 111 and 113. Accordingly, the distance d between the light emitting device 120 and the first and second frames 111 and 113 may be further spaced apart by the first and second conductive protrusions P11 and P12. Due to the gap d, an area of the first resin 160 disposed between the light emitting device 120 and the first and second frames 111 and 113 may increase. The interval d may be at least 30 micrometers, for example in the range of 30 to 100 micrometers. The gap d may be smaller than the thickness of the first and second frames 111 and 113 and may vary depending on the heights of the first and second conductive protrusions P11 and P12.

The first and second conductive protrusions P11 and P12 may face the first and second frames 111 and 113, respectively. The first bonding part 121 of the light emitting device 120 may be disposed on the first frame 111, and the second bonding part 122 may be disposed on the second frame 113. The first bonding part 121 of the light emitting device 120 may be disposed on the first frame 111, and the second bonding part 122 may be disposed on the second frame 113. The first bonding part 121 or / and the first conductive protrusion P11 may be connected to the first frame 111 and the conductive part or may be bonded to each other. The second bonding part 122 or / and the second conductive protrusion P12 may be connected to the second frame 111 and the conductive part or may be bonded to each other. The conductive part may include a material bonding the first and second bonding parts 127 and 129 or the conductive protrusions P11 and P12 on the upper surfaces of the first and second frames 111 and 113. The conductive part may include one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, or an alloy thereof. At least one of each of the frames 111 and 113 and the bonding parts 121 and 122 may be formed by combining a material constituting the material and the conductive part with each other by an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , and x may satisfy the condition of 0 <x <1, y = 1-x, x> y. Can be.

The bonding parts 121 and 122 and / or the conductive protrusions P11 and P12 of the light emitting device 120 may be formed of a material forming the conductive part and the conductive part or may be heat treated after the conductive part is provided. An intermetallic compound (IMC) layer may be formed between the frames 120. As an example, the conductive part may be formed using a conductive paste. The conductive paste may include a solder paste, a silver paste, or the like, and may include a multilayer or a single layer composed of a multilayer or an alloy composed of different materials. For example, the conductive part may include an SAC (Sn-Ag-Cu) material.

For example, an alloy layer may be formed by bonding between a material forming the conductive portion and a metal of the frames 111 and 113. Accordingly, the conductive portion and the frames 111 and 113 may be physically and electrically coupled stably. The conductive portion, the alloy layer and the frame can be coupled physically and electrically stably. The alloy layer may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, the first material may be provided from a conductive part, and the second material may be the bonding parts 121 and 122 and the conductive protrusions P11 and P12. Alternatively, the frames 111 and 113 may be provided.

The light emitting device package 100 may be mounted on a sub mount or a circuit board. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high temperature process such as a reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in the bonding region between the lead frame and the light emitting device provided in the light emitting device package, thereby weakening the stability of the electrical connection and the physical coupling.

However, the first bonding portion 121 and the second bonding portion 122 of the light emitting device according to the embodiment may receive driving power through the frames 111 and 113 and the conductive portion. And, the melting point of the conductive portion may be selected to have a higher value than the melting point of the other bonding material. Therefore, the light emitting device package 100 according to the embodiment does not cause re-melting even when bonded to a main substrate through a reflow process, so that electrical connection and physical bonding force are not degraded. There are advantages. In addition, according to the light emitting device package 100 according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, the package body 110 may be exposed to high temperature to prevent damage or discoloration.

Accordingly, the range of selection for the material constituting the body 115 can be widened. According to an embodiment, the body 115 may be provided using a relatively inexpensive resin material as well as an expensive material such as a ceramic. For example, the body 115 includes at least one material selected from the group consisting of PolyPhtalAmide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, epoxy molding compound (EMC) resin, and silicone molding compound (SMC) resin. can do.

In the light emitting device package 100 according to an exemplary embodiment, the first resin 160 may be disposed under the light emitting device 120. The first resin 160 may be injected and cured through the through hole TH1. Accordingly, the first resin 160 may be disposed in the region between the light emitting device 120 and the first and second frames 111 and 113 and in the through hole TH1. The first resin 160 may adhere the light emitting device 120 to the body 115 to strengthen the supporting force of the light emitting device 120.

The first resin 160 may provide a stable fixing force between the light emitting device 120 and the package body 110. The first resin 160 may be an adhesive. The first resin 160 may provide a stable fixing force between the light emitting device 120 and the body 115. For example, the first resin 160 may be disposed in direct contact with an upper surface of the body 115. In addition, the first resin 160 may be disposed in direct contact with the lower surface of the light emitting device 120. For example, the first resin 160 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material. Can be. As another example, when the first resin 160 includes a reflective function, the first resin 160 may include metal oxide or TiO ₂ , SiO ₂ , or Al ₂ O ₃ . The first resin 160 may include white silicone. The material of the first resin 160 may be formed of a material that radiates heat from the light emitting device 120.

The first resin 160 may provide a stable fixing force between the body 115 and the first and second bonding parts 121 and 122 and the first and second frames 111 and 113 of the light emitting device 120. When the light is emitted to the bottom surface of the light emitting device 120, the first resin 160 may provide a light diffusion function between the light emitting device 120 and the body 115. When light is emitted from the light emitting device 120 to the bottom surface of the light emitting device 120, the first resin 160 may improve light extraction efficiency of the light emitting device package 100 by providing a light diffusing function. have. In addition, the first resin 160 may reflect light emitted from the light emitting device 120. When the first resin 160 includes a reflection function, the first resin 160 may include a filler, for example, TiO ₂ , SiO ₂ , or Al ₂ O ₃ .

The first resin 160 may bond the first and second frames 111 and 113 to the first and second conductive protrusions P11 and P12 of the light emitting device 120. The first resin 160 may be disposed around the lower surface of the first and second bonding parts 121 and 122 around the lower surface of the light emitting device 120 and bonded to each other.

2 and 6, the outer surface S6 of the first resin 160 is disposed on the same vertical plane as the side surface S5 of the light emitting device 120 or the side surface of the light emitting device 120 ( It may be disposed inward from S5). A lower portion of the outer surface S6 of the first resin 160 may be concavely disposed in the first and second conductive protrusions P11 and P12. A lower portion of the outer surface S6 of the first resin 160 may include a recess R1. The recess R1 may be concave inwardly than the outer surface S6. The recess R1 may be disposed inward from a vertical extension line of the outer surface S6 or the side surface S5 of the light emitting device 120. The depth e of the recess R1 may be concave to 0.1 micrometer or more. The depth e of the recess R1 may gradually become closer to the upper surfaces of the first and second frames 111 and 113. A lower portion of the side surface S6 of the first resin 160 in which the recess R1 is disposed may include a convex curved surface. The recess R1 and the first resin 160 having the convex curved surface may increase an adhesive area with the molding part 190 and may increase the bearing force of the molding part 190.

A lower portion of the side surface S6 of the first resin 160 may be the same as the side surface S5 of the light emitting device 120 or may be disposed inside the side surface S5 of the light emitting device 120. The side surface S6 of the first resin 160 may be connected to the top surfaces of the first and second frames 111 and 113 from the bottom edge of the light emitting device 120. The side surface S6 of the first resin 160 may be recessed further inward than the side surface S5 of the light emitting device 120 toward the lower side. The side surface S6 of the first resin 160 may include a curved surface to effectively reflect light. The side surface S6 of the first resin 160 may include a curved surface convex in the outward direction or a curved surface in the inward direction.

The upper edge of the first resin 160 may be disposed outside the lower edge. An upper edge of the first resin 160 may be connected to or in contact with an edge of the light emitting device 120. Bottom edges of the first resin 160 may be spaced apart from bottom edges of the first and second conductive protrusions P11 and P12. When the outer side surface S6 of the first resin 160 has a curved upper and lower surface, the lower curvature radius may be smaller than the upper curvature radius.

The side surface S6 of the first resin 160 may be disposed inside the virtual straight line connecting the lower edge of the light emitting device 120. On the first and second frames 111 and 113, an upper surface area of the first resin 160 may be larger than a lower surface area.

The molding part 190 is disposed in the recess R1 between the lower edge of the first resin 160 and the first and second frames 111 and 113 and is disposed on the side surface S6 of the first resin 160. Can be contacted. The molding part 190 may include an extension protrusion protruding into a recess R1 between the bottom edge of the first resin 160 and the first and second frames 111 and 113. The extension protrusion of the molding part 190 may be in close contact with the upper surface of the first resin 160 and the body 115 and the upper surfaces of the first and second frames 111 and 113.

The first resin 160 may be in close contact with the light emitting device 120 and the first and second frames 111 and 113 and the body 115 to block moisture immersion. Therefore, the lower surface area of the first resin 160 may be smaller than the upper surface area, so that the light emitting device 120 may be stably adhered to the first and second frames 111 and 113.

The light emitting device 120 may include a molding part 190 covering the light emitting device 120. The molding part 190 may be disposed on the top and side surfaces of the light emitting device 120, and may be disposed around the first resin 160. The molding part 190 may be disposed on the first and second frames 111 and 113 and the body 115 exposed in an outer direction of the light emitting device 120.

The molding part 190 may be in direct contact with the edges of the frames 111 and 113. The molding part 190 may be in direct contact with an outer end or an outer edge of the frames 111 and 113. The molding part 190 may be in direct contact with the outer ends of the first and second directions of the frames 111 and 113. The molding part 190 may be disposed to surround the light emitting device 120.

According to the embodiment of the present invention, the molding part 190 may extend to the entire upper surface of the body 115 and the frames 111 and 113. The embodiment of the present invention does not provide the upper body of the reflective material on the upper portion of the frame (111, 113), it can prevent the interface separation problem between the body 115 and the frame (111,113).

Side surfaces S1, S2, S3, and S4 of the molding unit 190 may be disposed in the same vertical plane as the side surfaces of the first frame 111, the second frame 113, and the body 115. Accordingly, since the molding part 190 supports the outside of the first and second frames 111 and 113, an adhesive force between the molding part 190 and the body 115 may be improved and a difference in thermal expansion coefficient may be obtained. It can improve the body deformation problem or interface separation problem according to.

The molding part 190 may include an insulating material. In addition, the molding part 190 may include wavelength conversion means for receiving the light emitted from the light emitting device 120 and providing the wavelength-converted light. For example, the molding unit 190 may be at least one selected from the group including phosphors, quantum dots, and the like. The light emitting device 120 may emit light of blue, green, red, white, infrared or ultraviolet light. The phosphor or quantum dot may emit light of blue, green, and red. A phosphor layer may be further disposed between the molding part 190 and the light emitting device 120. The phosphor layer may be attached to the surface of the light emitting device 120.

The phosphor disposed inside or below the molding unit 190 may include a phosphor of a fluoride compound, and may include, for example, at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. The phosphor may emit light of different peak wavelengths, and the light emitted from the light emitting device may emit light of different yellow and red colors or different red peak wavelengths. One kind of the phosphor may include a red phosphor. The red phosphor may have a wavelength range of 610 nm to 650 nm, and the wavelength may have a half width of less than 10 nm. The red phosphor may include a fluoride phosphor. The fluorite-base phosphor, the red-based KSF _{K 2 SiF 6: Mn 4 +} , K 2 TiF 6: Mn 4 +, NaYF 4: Mn 4 +, NaGdF 4: Mn 4 +, K 3 SiF 7: Mn 4+ It may include at least one of. For example, the KSF-based phosphor may have a composition formula of K _a Si _1-c F _b : Mn ⁴⁺ _c , wherein a is 1 ≦ a ≦ 2.5, b is 5 ≦ b ≦ 6.5, and c is 0.001 ≦ c <0.1 may be satisfied. In addition, the fluorite-based red phosphor may further include an organic coating on the surface of the fluoride or Mn-containing fluoride or the surface of the fluoride coating does not contain Mn in order to improve the reliability at high temperature / high humidity. In the case of the above-described fluerite-based red phosphor, since the half width of 10 nm or less can be realized unlike other phosphors, it can be utilized in a high resolution device.

The phosphor composition according to the embodiment should basically conform to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr may be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y may be substituted with Tb, Lu, Sc, Gd, etc. of the lanthanide series. In addition, the active agent Eu, etc. may be substituted by Ce, Tb, Pr, Er, Yb, etc. according to a desired energy level, and an active agent alone or a deactivator may be additionally applied to modify properties.

The quantum dot phosphor may include a II-VI compound or a III-V compound semiconductor, and may emit red light. The quantum dots are, for example, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In, Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS ₂ , Such as CuInSe ₂ and the like, and combinations thereof.

The molding part 190 may have a single layer or a multilayer structure. The molding part 190 of the multilayer structure may be a layer having a phosphor, and an upper layer may be a layer having no phosphor. The molding part 190 of the multilayer structure may be a layer having no phosphor, and an upper layer may be a layer having a phosphor. The molding part 190 of the multilayer structure may be a layer having a first phosphor, and an upper layer may be a layer having a second phosphor. The first and second phosphors may be different kinds of phosphors or heterogeneous phosphors emitting different colors.

The molding part 190 may cover the entire upper surfaces of the frames 111 and 113, and thus increase the direction angle distribution of the light emitted through the molding part 190. For example, the orientation angle may be at least 130 degrees, for example at least 135 degrees.

The molding part 190 may be in contact with the top and side surfaces of the light emitting device 120 and the circumference of the side surface S6 of the first resin 160.

3 is a first modified example of the light emitting device package of FIG. 2. The configuration of the first modification can optionally apply the configuration and description disclosed above.

Referring to FIG. 3, the light emitting device package may include a second resin 117 around upper portions of the first and second frames 111 and 113. The second resin 117 may be disposed to surround the outside of the first resin 160. The second resin 117 may be contacted along the outer circumference of the first resin 160. The second resin 117 may be in contact with the bottom of the side surface of the light emitting device 120 or may be spaced apart from the bottom edge of the side surface of the light emitting device 120. A portion of the second resin 117 may overlap with the light emitting device 120 in the vertical direction. The position of the second resin 117 is a gap between the first resin 160 and the second resin 117 and the light emitting device 120 according to the viscosity during the injection process of the first resin 160. Alternatively, the light emitting device may be disposed around the lower portion of the light emitting device 120 at intervals that do not leak at intervals. The outer upper surface S8 of the second resin 117 may be exposed around the lower circumference of the light emitting device 120. The outer upper surface S8 of the second resin 117 may be a horizontal surface or a convex surface. The height of the second resin 117 may be equal to or smaller than the distance d between the bottom surface of the light emitting device 120 and the first and second frames 111 and 113. The height of the second resin 117 may be equal to or smaller than the thickness (eg, d) of the first resin 160. The second resin 117 may serve as a dam to prevent side leakage of the first resin 16 around the lower portion of the light emitting device 120. A portion of the second resin 117 according to an embodiment of the present invention may be connected to the frame 115 from the body 115 or protrude from the body 115, and may be disposed on the upper surfaces of the frames 111 and 113. It may be disposed inside the stepped structure.

The second resin 117 may include at least one of an epoxy-based material, a silicon-based material, a hybrid material including an epoxy-based material and a silicon-based material. As another example, the second resin 117 may include a metal oxide or TiO ₂ , SiO ₂ , or Al ₂ O ₃ . The second resin 117 may include white silicone. The material of the second resin 117 may be formed of a material that radiates heat from the light emitting device 120. As another example, an absorbing part may be disposed at a position of the second resin 117. The absorption may include a graphite material in the silicon or epoxy based material.

The lower surface of the second resin 117 may be in contact with the first and second frames 111 and 113 and may be disposed on the body 115 disposed outside the light emitting device 120. The second resin 117 is coupled to the body 115 to support the first and second frames 111 and 113 or to prevent the light emitting device 120 from being tilted.

4 is a second modified example of the light emitting device package of FIG. 2. The configuration of the second modified example can optionally apply the configuration and description disclosed above.

Referring to FIG. 4, the first and second frames 111 and 113 may include stepped structures ST1 and ST2. The first stepped structure ST1 may be disposed below the outer side of the first frame 111, and the second stepped structure ST2 may be disposed below the outer side of the second frame 113. The first and second stepped structures ST1 and ST2 may be equal to or smaller than the length in the second direction of the first and second frames 111 and 113. Outer portions 51 and 53 of the body 115 may be disposed in the first and second stepped structures ST1 and ST2. Outer portions 51 and 53 of the body 115 may be connected to a portion of the body. Since the outer portions 51 and 53 of the body 115 are exposed around the outer bottom, the moisture penetration path may be increased.

5 is a third modified example of a package according to an embodiment of the invention. The configuration of the third modified example can optionally apply the configuration and description disclosed above.

Referring to FIG. 5, the side parts 91 and 92 of the molding part 190 may be disposed outside the side surfaces of the first and second frames 111 and 113. Outer side surfaces of the first and second frames 111 and 113 may be spaced apart from each side surface S1, S2, S3, and S4 of the molding unit 190. The outer side surfaces of the body 115 and the outer portions 51 and 53 may be spaced apart from the side surfaces S1, S2, S3, and S4 of the molding unit 190. The distance in the first direction between each side surface S1, S2, S3, S4 of the molding unit 190 and the outer side surface of the frame 111, 113 or the body 115 is 25 micrometers or more, for example, 25 to 300 micrometers. It may be in the range of. The distance in the second direction between each side surface S1, S2, S3, S4 of the molding unit 190 and the outer side surface of the frame 111, 113 or the body 115 is 25 micrometers or more, for example, 25 to 300 micrometers. It may be in the range of. The side parts 91 and 92 of the molding part 190 may suppress and reduce deformation in the horizontal direction according to the coefficient of thermal expansion between the frames 111 and 113 and the body 115. Since it is provided as a structure without a stepped structure protruding from the upper outer edges of the frames 111 and 113, the outer ends of the frames 111 and 113 may be supported by the side parts 91 and 92 of the molding part 190. According to an embodiment of the present invention, the side parts 91 and 92 of the molding part 190 may provide a long moisture penetration path, thereby suppressing moisture penetration.

FIG. 7 is a fourth modified example of the light emitting device package of FIG. 2. The configuration of the fourth modified example can optionally apply the configuration and description disclosed above.

Referring to FIG. 7, a third resin 162 may be disposed on the first and second frames 111 and 113. The third resin 162 may be disposed between the first and second frames 111 and 113 and the molding unit 190. The third resin 162 may be disposed to overlap the molding part 190 in a vertical direction. The third resin 162 may overlap in a horizontal direction around the first resin 160. An upper surface height of the third resin 162 may be lower than an upper surface of the first resin 160. The third resin 162 may cover the outer periphery of the first resin 160 to prevent the tilt or the flow of the light emitting device 120 disposed on the first resin 160. An inner portion of the third resin 162 may be disposed or in contact with the recess R1 of the first resin 160. The thickness of the third resin 162 may be 1/4 or more of the wavelength emitted from the light emitting device 120.

According to an embodiment of the present invention, when the fillers added to the third resin 162 are accelerated, the fillers added to the third resin 162 may be precipitated in the bottom direction. Here, the step of accelerating the precipitation phenomenon may include a step of accelerating using a centrifuge.

The third resin 162 may be filled to the lower circumference of the light emitting device 120 to perform a sealing function. In addition, the third resin 162 may improve the adhesive force between the light emitting device 120 and the first frame 111. The third resin 162 may improve adhesion between the light emitting device 120 and the second frame 113 and may be in close contact with the molding unit 190, thereby suppressing moisture penetration.

When the thickness of the third resin 162 is smaller than the thickness of the first resin 160, for example, 80% or less of the thickness of the first resin 160, the inner upper end of the third resin 162 It may be in contact with the side surface (S6) of the first resin (160). In this case, the third resin 162 reflects light and supports the circumference of the first resin 160 to prevent a problem due to thermal expansion. 80% or more of the upper surface area of the third resin 162 may be lower than the lower surface of the light emitting device 120. When more than 80% of the area of the upper surface of the third resin 162 protrudes from the lower surface of the light emitting device 120, a portion in contact with the side surface of the light emitting device 120 may be increased, resulting in increased light loss. Can be.

As another example, an upper surface of the third resin 162 may be lower than a lower surface of the light emitting device 120. In this case, the third resin 162 may contact the side surface S6 of the first resin 160. Therefore, the lower periphery of the light emitting device 120 is tripled by the first resin 160, the third resin 162, and the molding part 190, thereby preventing moisture from penetrating into the light emitting device 120. .

As another example, when the thickness of the third resin 162 is increased, the third resin 162 may be formed on the side surface S6 of the first resin 160 and the lower side edge of the side surface of the light emitting device 120. Can be contacted. In this case, the third resin 162 covers the lower circumference of the light emitting structure 123 to reflect the side light of the light emitting structure 123 in the upward direction, thereby improving the brightness.

In addition, when the third resin 162 includes a material having reflective characteristics such as white silicon, the third resin 162 may emit light provided from the light emitting device 120 of the package body 110. The light extraction efficiency of the light emitting device package 100 may be improved by reflecting upward. The third resin 162 and the first resin 160 may be formed of the same material. The third resin 162 may be disposed around the bonding parts 121 and 122 of the light emitting device 120 to prevent diffusion of the conductive part to serve as a dam of the conductive part. The third resin 162 may improve the luminous flux in the case of a reflective material. The third resin 162 may be formed of a black material.

FIG. 8 is a fourth modified example of the light emitting device package of FIG. 2, and illustrates an example of a package body before the light emitting device is disposed. The configuration of the fourth modified example can optionally apply the configuration and description disclosed above.

Referring to FIG. 8, the package body may include a first frame 111, a body 115, and a second frame 113. The first frame 111 includes a plurality of protrusions 11, 12, and 13 protruding in the direction of the second frame 113, and the second frame 113 protrudes in the direction of the first frame 111. It may include a plurality of projections (31, 32, 33).

The first frame 111 may include first extension protrusions 17 and 18 extending in an outward direction, and a portion of the body 115 may be formed in an area Re between the first extension protrusions 17 and 18. Can be arranged. The second frame 113 includes second extension protrusions 37 and 38 extending in an outward direction, and a portion of the body 115 is formed in an area Rf between the second extension protrusions 37 and 38. Can be deployed. The first and second extension protrusions 17, 18, 37, and 38 may be combined with the body 115 to strengthen the bonding force with the body 115 and to suppress moisture penetration.

The first end of the first frame 111 is adjacent to the second frame 113, and includes a plurality of protrusions (11, 12, 13) protruding in the direction of the second frame 111 or the second side. can do. The first frame 111 may include three or more protrusions, the first protrusion 11 of the center side and the second protrusions 12 and the third protrusions on both sides of the first protrusion 11 in the second direction. (13) may be included. The first protrusion 11 may overlap the light emitting device 120 in the vertical direction or the third direction Z. The first protrusion 11 may be disposed between the second protrusion 12 and the third protrusion 13.

The body 115 extends in the recess Rb between the first and second protrusions 11 and 12 and the recess Ra between the first and third protrusions 11 and 13. Can be deployed. The first to third protrusions 11, 12, and 13 may be exposed to the bottom of the body 15. The first to third protrusions 11, 12, and 13 may overlap in a second direction. The outer portions of the second protrusion 12 and the third protrusion 13 may be overlapped and coupled with the body extension in the horizontal direction.

The second end of the second frame 113 may face the first end and may be adjacent to the first frame 111. The second end of the second frame 113 may include a plurality of protrusions 31, 32, and 33 protruding in the first frame direction or the first side direction. The second frame 113 may include three or more protrusions, and the center side fourth protrusions 31 and the fifth protrusions 32 and the sixth protrusions 33 on both sides of the fourth protrusions 31. It may include.

The body 115 extends in the recess Rd between the fourth and fifth protrusions 31 and 32 and the recess Rc between the fourth and sixth protrusions 31 and 33. Can be deployed. The fourth to sixth protrusions 31, 32, and 33 may be exposed to the bottom of the body 15. The fourth to sixth protrusions 31, 32, and 33 may overlap in the second direction. The outer portions of the fifth protrusion 32 and the sixth protrusion 33 may overlap and be coupled to the body extension part in the horizontal direction.

The fourth protrusion 31 may overlap the light emitting device 120 in the vertical direction or the third direction Z. The fourth protrusion 31 may be disposed between the fifth protrusion 32 and the sixth protrusion 33.

The first protrusion 11 may be equal to the number of light emitting devices 120. For example, when the number of light emitting devices is one, the number of the first protrusions is one, and when the two light emitting devices are two light emitting devices, The number of one protrusion may be two. The fourth protrusion 31 may be equal to the number of light emitting devices 120. For example, when the number of light emitting devices is one, the number of the fourth protrusions is one, and when the two light emitting devices are two light emitting devices, The number of four protrusions may be two.

The recesses Ra and Rb disposed between the first to third protrusions 11, 12, and 13 of the first frame 111 may be the fourth to sixth protrusions 31 of the second frame 113. The recesses Rc and Rd disposed between the first and second recesses 32 and 33 may correspond to or overlap each other in the first direction. Since extension protrusions of the body 115 are disposed in the recesses Ra, Rb, Rc, and Rd disposed on both sides of the light emitting device 120, the conductive part disposed below the light emitting device 120 has the body. Diffusion or movement may be blocked by the extension protrusion of 115. In addition, the thickness of the conductive portion may be reduced according to the diffusion region of the conductive portion can reduce the problem.

Each of the protrusions 11, 12, and 13 of the first frame 111 may be opposite to each of the protrusions 31, 32, and 33 of the second frame 113. The first protrusion 11 faces the fourth protrusion 31, the second protrusion 12 faces the fifth protrusion 32, and the third protrusion 13 faces the sixth protrusion 33. Can be. Since the extension protrusion of the body is disposed in the region between the protrusions 11, 12, 13 of the first frame 111 and the region between the protrusions 31, 32, 33 of the second frame 113, The first and second frames 111 and 113 may be supported.

The first protrusion 11 may face or face the first bonding part 121 of the light emitting device 120, and the fourth protrusion 31 may be the second bonding part 122 of the light emitting device 120. Can face or face. The first protrusion 11 and the first bonding part 121 or the first conductive protrusion P11 of the light emitting device 120 are bonded to each other by a bonding member, and the fourth protrusion 41 and the light emitting device 120 are connected to each other. The second bonding portion 122 or the second conductive protrusion P12 may be bonded to the conductive portion that is a bonding member.

The light emitting device 120 may be adhered to and supported on the body 115 by a first resin injected through the through hole TH1. Since the light emitting device 120 is disposed at a position spaced apart from the top surfaces of the first and second frames 111 and 113, the light emitted from the light emitting device 120 may be emitted to the top surface and each side direction. Such modifications may be selectively applied to the configuration of the first to fourth modifications.

9 is a modified example of a frame of a light emitting device package according to an embodiment of the present invention. Such a frame may be applied to the frame of the above embodiments or variations.

Referring to FIG. 9, in the light emitting device package, the frames 111 and 113 may be disposed on surfaces of the support frames 112 and 114 of an insulating material. The frames 111 and 113 may be conductive frames or metal frames according to embodiments. The support frames 112 and 114 may be resin films or plastic materials. The frames 111 and 113 may extend on upper, inner and lower surfaces of the support frames 112 and 114, respectively. The frames 111 and 113 may be provided to a thickness of 150 micrometers or less. The light emitting device 120 and the first resin 160 may be disposed on the frames 111 and 113 disposed on the support frames 112 and 114, and the body 115 may be disposed between the frames 111 and 113. . The body 115 may include the through-hole TH1 disclosed above, and the first resin 160 may be disposed. The outer side surfaces of the support frames 112 and 114 may be exposed from the surfaces of the frames 111 and 113, or the frames 111 and 113 may be covered.

10 and 11 illustrate a process of injecting the first resin into the package body.

As shown in FIG. 10, the first and second conductive protrusions P11 and P12 of the light emitting device 120 may be bonded to the first and second frames 111 and 113 or bonded to the conductive portion. The light emitting device 120 and the frames 121 and 113 are rotated up and down so that the through hole TH1 of the body 115 is exposed in the upward direction.

As shown in FIG. 11, the first resin liquid 160A is injected through the through hole TH1, wherein the first resin liquid is bonded to each of the bonding parts 121 and 122 of the light emitting device 120, and each conductive protrusion P11, P12 is filled around, and the side surface S6 of the first resin liquid is formed to extend from the edge of the light emitting device 120 to the lower surfaces of the frames 111 and 113. At this time, the side surface S6 of the first resin liquid may be formed in a curved surface. When the first resin liquid is cured, the first resin 160 becomes the first resin 160, and the first resin 160 may support and fix the light emitting device 120 and the first and second frames 111 and 113. Thereafter, molding and curing are performed in the molding part. The side surface S6 of the first resin liquid may be formed as a convex curved surface or a concave curved surface. When the side surface S6 of the first resin is a curved surface having a concave recess R1, the incident light may be effectively reflected or refracted in another direction.

Since the first resin liquid is injected through the through holes TH1 in the direction of the first and second bonding parts 121 and 122 of the light emitting device 120, the first resin liquid is injected into the light emitting device 120 and the first and second liquids. The area between the frames 111 and 113 may be filled and may not be diffused on the side surface of the light emitting device 120. Accordingly, the cured first resin may be spaced apart from the side surface of the light emitting device 120, thereby preventing a problem of giving interference or loss of light emitted through the side surface of the light emitting device 120.

Referring to FIG. 11, the upper surface of the first resin 160 may face the frames 111 and 113, and the lower surface may face the light emitting device 120. The upper edge of the first resin 160 may be disposed inwardly than the lower edge. The bottom edge of the first resin 160 may be connected to or in contact with the edge of the light emitting device 120. The light emitting device package is rotated 180 degrees and then molded into a molding part, and thus may be provided as the light emitting device package disclosed in FIGS. 2 and modified examples thereof.

12 is an example of a light source device having the light emitting device package of FIG. 2. The light emitting device package disclosed above is an example of a light source device or a light source module disposed on a circuit board. As an example, it may be implemented as a light source device having the light emitting device package of the above embodiment (s).

2 and 12, in the light source module according to the embodiment, one or a plurality of light emitting device packages 100 may be disposed on the circuit board 201. When the plurality of light emitting device packages 100 are disposed, the same color or different colors may be emitted. The plurality of light emitting device packages 100 may emit the same peak wavelength or different peak wavelengths.

The circuit board 201 may include a substrate member having pads 211 and 213. A power supply circuit for controlling the driving of the light emitting device 120 may be provided on the circuit board 201. Each of the frames 111 and 113 of the light emitting device package 100 may be connected to the pads 211 and 213 of the circuit board 201 through bonding layers 221 and 223. Accordingly, the light emitting device 120 of the light emitting device package 100 may receive power from each pad of the circuit board 201. Each pad of the circuit board 201 is, for example, at least one material selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, Al or The alloy may be included.

Each pad 211 and 213 of the circuit board 201 may be disposed to overlap the frames 111 and 113 and the first and second frames. Bonding layers 221 and 223 may be provided between the pads 211 and 213 and the frames 111 and 113, respectively. The bonding layers 221 and 223 may be connected to the frames 111 and 113 and / or conductive portions of the first and second frames.

 According to the light emitting device package according to the embodiment, the bonding parts 121 and 122 of the light emitting device 120 may be supplied with driving power through the conductive parts disposed on the frames 111 and 113. And, the melting point of the conductive portion may be selected to have a higher value than the melting point of the general bonding material. The light emitting device package according to the embodiment does not have a remelting phenomenon even when bonded to a main substrate through a reflow process, so that electrical connection and physical bonding force are not degraded. According to the light emitting device package according to the embodiment, the package body 110 and the body 115 do not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 and the body 115 from being damaged or discolored due to exposure to high temperature.

The light emitting device package 100 according to the embodiment may be mounted on a sub-mount or a circuit board 201 and supplied. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high temperature process such as a reflow may be applied. At this time, in the reflow process, a re-melting phenomenon may occur in the bonding region between the frame and the light emitting device provided in the light emitting device package, thereby weakening the stability of the electrical connection and the physical coupling and thus the position of the light emitting device. May vary, thereby deteriorating optical and electrical characteristics and reliability of the light emitting device package. Therefore, the light emitting device package 100 according to the embodiment attaches the light emitting device 120 to the first resin 160, and remelts even when bonded to the main substrate through a reflow process. -Melting) does not occur, there is an advantage that the electrical connection and physical bonding force does not deteriorate.

13 is a cross-sectional view showing an example of a light emitting device applied to the light emitting device package according to an embodiment of the present invention.

Referring to FIG. 13, the light emitting device conceptually illustrates only a relative arrangement relationship between the first electrode 627 and the second electrode 628. The first electrode 627 may include a first bonding part 621 and a first branch electrode 625. The second electrode 628 may include a second bonding part 622 and a second branch electrode 626.

The light emitting device may include a light emitting structure 623 disposed on the substrate 624. The substrate 624 may be selected from the group including sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge. For example, the substrate 624 may be provided as a patterned sapphire substrate (PSS) having an uneven pattern formed on an upper surface thereof.

The light emitting structure 623 may include a first conductive semiconductor layer 623a, an active layer 623b, and a second conductive semiconductor layer 623c. The active layer 623b may be disposed between the first conductivity type semiconductor layer 623a and the second conductivity type semiconductor layer 623c. For example, the active layer 623b may be disposed on the first conductive semiconductor layer 623a, and the second conductive semiconductor layer 623c may be disposed on the active layer 623b.

In example embodiments, the first conductivity-type semiconductor layer 623a may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 623c may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductive semiconductor layer 623a may be provided as a p-type semiconductor layer, and the second conductive semiconductor layer 623c may be provided as an n-type semiconductor layer.

The light emitting device may include a first electrode 627 and a second electrode 628. The first electrode 627 may include a first bonding part 621 and a first branch electrode 625. The first electrode 627 may be electrically connected to the second conductivity type semiconductor layer 623c. The first branch electrode 625 may be branched from the first bonding part 621. The first branch electrode 625 may include a plurality of branch electrodes branched from the first bonding part 621. The second electrode 628 may include a second bonding part 622 and a second branch electrode 626. The second electrode 628 may be electrically connected to the first conductivity type semiconductor layer 623a. The second branch electrode 626 may be branched from the second bonding part 622. The second branch electrode 626 may include a plurality of branch electrodes branched from the second bonding part 622.

The first branch electrode 625 and the second branch electrode 626 may be alternately arranged in a finger shape. Power supplied through the first bonding portion 621 and the second bonding portion 622 by the first branch electrode 625 and the second branch electrode 626 to the entire light emitting structure 623. It can be spread and provided.

The first electrode 627 and the second electrode 628 may be formed in a single layer or a multilayer structure. For example, the first electrode 627 and the second electrode 628 may be ohmic electrodes. For example, the first electrode 627 and the second electrode 628 are ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni At least one of Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy of two or more of these materials.

Meanwhile, a protective layer may be further provided on the light emitting structure 623. The protective layer may be provided on an upper surface of the light emitting structure 623. In addition, the protective layer may be provided on the side surface of the light emitting structure 623. The protective layer may be provided to expose the first bonding portion 621 and the second bonding portion 622. In addition, the protective layer may be selectively provided on the circumference and the lower surface of the substrate 624.

For example, the protective layer may be provided as an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y It may be formed of at least one material selected from the group containing.

In the light emitting device according to the embodiment, the light generated in the active layer 623b may be emitted in the six plane direction of the light emitting device. Light generated by the active layer 623b may be emitted in six plane directions through the top, bottom, and four side surfaces of the light emitting device.

As another example of the light emitting device, at least one of the first electrode and the second electrode may be implemented in a pattern form, and a conductive protrusion may be disposed on the electrode of the pattern form. The pattern may include a pattern having one or more arm shapes or branch shapes. Alternatively, conductive protrusions may be disposed on each bonding portion of the light emitting device. The light emitting device has been described as having a light emitting cell. When the light emitting cell includes the light emitting structure, the driving voltage of the light emitting device may be a voltage applied to one light emitting cell. As an example of the light emitting device disclosed in the embodiment, a light emitting device having two light emitting cells may be disclosed.

The light emitting device disclosed above has been described as a structure having one light emitting cell. When the light emitting cell includes the light emitting structure, the driving voltage of the light emitting device may be a voltage applied to one light emitting cell. Examples of the light emitting device disclosed in the embodiment may include a light emitting device having two or three or more light emitting cells. Accordingly, a high voltage light emitting device package can be provided.

On the other hand, the light emitting device package according to an embodiment of the invention described above may be supplied mounted on a sub-mount or a circuit board. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high temperature process such as a reflow may be applied. At this time, in the reflow process, a remelting phenomenon may occur in the bonding region between the frame and the light emitting device provided in the light emitting device package, thereby weakening the stability of the electrical connection and the physical coupling. May vary, thereby deteriorating optical and electrical characteristics and reliability of the light emitting device package. However, according to the light emitting device package and the light emitting device package manufacturing method according to an embodiment of the present invention, the bonding portions of the light emitting device according to the embodiment of the present invention may be provided with a driving power through the frame and the conductive portion. And, the melting point of the frame and the conductive portion may be selected to have a higher value than the melting point of the general bonding material. Therefore, the light emitting device package according to the embodiment of the present invention does not deteriorate the electrical connection and the physical bonding force because remelting does not occur even when the main substrate is bonded through a reflow process. There is an advantage.

In addition, according to the light emitting device package and the light emitting device package manufacturing method according to an embodiment of the invention, the package body does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment of the present invention, it is possible to prevent the package body from being exposed to high temperatures and from being damaged or discolored. Accordingly, the range of choices for the materials constituting the body can be widened. According to an embodiment of the present invention, the body may be provided using a relatively inexpensive resin material as well as an expensive material such as a ceramic. For example, the body may include at least one material selected from the group consisting of PolyPhtalAmide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, epoxy molding compound (EMC) resin, and silicone molding compound (SMC) resin. .

On the other hand, one or more light emitting device packages according to an embodiment of the present invention may be disposed on a circuit board and applied to a light source device. In addition, the light source device may include a display device, a lighting device, a head lamp, or the like according to an industrial field.

As an example of the light source device, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module emitting light and including a light emitting element, and a light disposed in front of the reflector and guiding light emitted from the light emitting module to the front. An optical sheet including a light guide plate, prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel; It may include a color filter disposed in front. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. In addition, the display device does not include a color filter, and may have a structure in which light emitting devices emitting red, green, and blue light are disposed.

As another example of the light source device, the head lamp may include a light emitting module including a light emitting device package disposed on a substrate, a reflector reflecting light emitted from the light emitting module in a predetermined direction, for example, a front, and reflected by the reflector. It may include a lens for refracting the light forward, and a shade for blocking or reflecting a portion of the light reflected by the reflector toward the lens to achieve a light distribution pattern desired by the designer.

Another example of a light source device may include a lighting device, a cover, a light source module, a heat sink, a power supply, an inner case, and a socket. In addition, the light source device according to the embodiment of the present invention may further include any one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment of the present invention.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, but are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be interpreted that the contents related to such a combination and modification are included in the scope of the embodiments.

Although the above description has been made with reference to the embodiments, these are only examples and are not intended to limit the embodiments, and those of ordinary skill in the art to which the embodiments pertain may have several examples that are not exemplified above without departing from the essential characteristics of the embodiments. It will be appreciated that eggplant modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences related to such modifications and applications will have to be construed as being included in the scope of the embodiments set out in the appended claims.

110: package body
111,113: frames
115: body
117: second resin
120: light emitting element
121: first bonding part
122: second bonding portion
123: light emitting structure
124: substrate
160: first resin
162: third resin
P11, P12: Challenge Projection

Claims (9)

A first frame and a second frame;
A body disposed between the first frame and the second frame and including a through hole passing through an upper surface and a lower surface;
A light emitting device including a first bonding part facing the first frame and a second bonding part facing the second frame;
A first resin disposed between the light emitting element and the body; And
It includes a second resin surrounding the first resin and the first, second bonding portion,
The first resin light emitting device package extending from the upper surface of the first and second frame into the through hole of the body. The light emitting device package of claim 1, wherein a part of the second resin overlaps the light emitting device in a vertical direction. The upper surface of the first frame and the second frame is disposed on the same horizontal surface as the upper surface of the body,
The through-hole is a light emitting device package having a length smaller than the length of one side of the light emitting device The light emitting device package of claim 1, further comprising a first conductive protrusion protruding from the first bonding portion in the first frame direction, and a second conductive protrusion protruding from the second bonding portion in the second frame direction. . The method according to any one of claims 1 to 4,
A molding part on the light emitting device and the first and second frames; And
A third resin between the molding part and the first and second frames,
The upper surface of the third resin is disposed lower than the lower surface of the light emitting device package. The method according to any one of claims 1 to 4,
The light emitting device package having the same thickness of the first and second resin. The method according to any one of claims 1 to 4,
The thickness of the first and second resin is a light emitting device package is a gap between the lower surface of the light emitting device and the upper surface of the first and second frames. The method according to any one of claims 2 to 4,
The second resin is a light emitting device package protruding from the body. A circuit board; And
One or more light emitting device packages on the circuit board;
The light emitting device package is a light source device which is a light emitting device package which is the light emitting device package of any one of claims 1 to 4.

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