KR102523782B1 - Light emitting device package and light source unit - Google Patents

Abstract

A light emitting device package disclosed in an embodiment includes a first frame and a second frame spaced apart from each other; a body disposed between the first frame and the second frame; a light emitting element including a first bonding part facing the upper surface of the first frame and a second bonding part facing the upper surface of the second frame; a first extension part disposed on the first frame; a second extension part disposed on the second frame; and a first resin between the light emitting element and the body, the first extension part including a first spacer overlapping the light emitting element in a horizontal direction, and the second extension part overlapping the light emitting element in a horizontal direction. and a second spacer, the first frame may be disposed between the first spacer and the body, and the second frame may be disposed between the second spacer and the body.

Description

Light emitting device package and light source device {LIGHT EMITTING DEVICE PACKAGE AND LIGHT SOURCE UNIT}

Embodiments of the present invention relate to a light emitting device package, a method for manufacturing a light emitting device package, and a light source device having the same.

An embodiment of the present invention relates to a semiconductor device package, a method for manufacturing a semiconductor device package, and a light source device having the same.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in various ways such as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials are developed in thin film growth technology and device materials to produce red, green, It has the advantage of being able to implement light in various wavelength bands such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material can implement a white light source with high efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when light receiving devices such as photodetectors or solar cells are manufactured using Group 3-5 or Group 2-6 compound semiconductor materials, photocurrent is generated by absorbing light in various wavelength ranges through the development of device materials. By doing so, it is possible to use light in a wide range of wavelengths from gamma rays to radio wavelengths. In addition, such a light-receiving element has advantages of fast response speed, safety, environmental friendliness, and easy control of element materials, so that it can be easily used in power control or ultra-high frequency circuits or communication modules.

Accordingly, the semiconductor device can replace a transmission module of an optical communication means, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, and can replace a fluorescent lamp or an incandescent bulb. Applications are expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

The light emitting device (Light Emitting Device) may be provided as, for example, a p-n junction diode having a characteristic of converting electrical energy into light energy using a group 3-5 element or a group 2-6 element on the periodic table, and a compound semiconductor Various wavelengths can be implemented by adjusting the composition ratio.

For example, nitride semiconductors are of great interest in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, red light emitting devices, and the like using nitride semiconductors are commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, as a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm, in the wavelength range, in the case of a short wavelength, it is used for sterilization and purification, and in the case of a long wavelength, an exposure machine or a curing machine, etc. can be used

Ultraviolet light can be divided into three types in order of wavelength: UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm), and UV-C (200nm ~ 280nm). UV-A (315nm ~ 400nm) area is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit money discrimination, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm ~ 315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as semiconductor devices capable of providing high output are requested, research on semiconductor devices capable of increasing output by applying high power is being conducted.

In addition, in a semiconductor device package, research is being conducted on a method capable of improving light extraction efficiency of the semiconductor device and improving light intensity at the package end. In addition, in a semiconductor device package, research into a method for improving a bonding force between a package electrode and a semiconductor device is being conducted.

In addition, in semiconductor device packages, research is being conducted on ways to reduce manufacturing cost and improve manufacturing yield through process efficiency improvement and structural change.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which spacers are disposed on frames overlapping semiconductor devices or light emitting devices.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which spacers are placed on the outer portions of the semiconductor device or the light emitting device and overlapping frames, and the light emitting device is bonded to the frame and body with a reflective resin. .

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which spacers made of resin are disposed on frames overlapping with devices in a side-view type package.

An embodiment of the invention is a support capable of supporting a spacer by bending a frame

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which one or a plurality of devices are disposed on a frame.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package in which a first resin bonded between a body between frames spaced apart from each other and a semiconductor device or light emitting device is disposed.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package having a first recess in a body between frames spaced apart from each other, and attaching a device by disposing a first resin in the first recess.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package capable of improving light extraction efficiency and electrical characteristics.

Embodiments of the present invention may provide a semiconductor device package or a light emitting device package capable of reducing manufacturing cost and improving manufacturing yield by improving process efficiency and presenting a new package structure.

An embodiment of the present invention may provide a semiconductor device package or a light emitting device package capable of preventing re-melting from occurring in a bonding area of a device package in a process of re-bonding the device package to a substrate or the like.

A light emitting device package according to an embodiment of the present invention includes a first frame and a second frame spaced apart from each other; a body disposed between the first frame and the second frame; a light emitting element including a first bonding part facing the upper surface of the first frame and a second bonding part facing the upper surface of the second frame; a first extension part disposed on the first frame; a second extension part disposed on the second frame; and a first resin between the light emitting element and the body, the first extension part including a first spacer overlapping the light emitting element in a horizontal direction, and the second extension part overlapping the light emitting element in a horizontal direction. and a second spacer, the first frame may be disposed between the first spacer and the body, and the second frame may be disposed between the second spacer and the body.

According to an embodiment of the present invention, the heights of the first and second spacers may be the same as the thicknesses of the first and second extensions, and the first and second extensions may include the same resin material as the body.

According to an embodiment of the invention, the first extension portion is disposed around the first bonding portion, the second extension portion is disposed around the second bonding portion, and the first extension portion is disposed between the first bonding portion and the first frame. 1 conductive part; and a second conductive part between the second bonding part and the second frame.

According to an embodiment of the present invention, the first extension portion includes a first concave portion that gradually narrows in width toward an outer direction of the first bonding portion, and the second extension portion gradually narrows in width toward an outer direction of the second bonding portion. A second concave portion may be included.

According to an embodiment of the present invention, portions of the first and second concave portions are disposed outside the side surface of the light emitting device, and a second resin may be disposed in the first and second concave portions.

According to an embodiment of the present invention, the heights of the first and second spacers protrude from the first and second extension parts, and the first and second extension parts and the first and second spacers are made of the same resin as the body. material may be included.

According to an embodiment of the present invention, the minimum distance between the first and second spacers in the first direction may be shorter than the length of the light emitting element, and the maximum distance may be greater than the length of the light emitting element.

According to an embodiment of the present invention, a first support portion bent in a horizontal direction from the first frame toward the rear surface of the body, and a second support portion bent from the second frame toward the rear surface of the body, wherein the The first support part may overlap the first spacer in a horizontal direction, and the second support part may overlap the second spacer in a horizontal direction.

According to an embodiment of the invention, a second resin is included on the first and second extension parts, and the second resin may be adhered to the lower surface and the side surface of the light emitting device.

According to an embodiment of the invention, a first conductive portion between the first bonding portion and the first frame; and a second conductive part between the second bonding part and the second frame, wherein the first and second frames have accommodating areas on both sides of an area where the first and second bonding parts are disposed, and the accommodating area is provided. The first and second conductive parts may be disposed in the region.

According to an embodiment of the invention, the body includes a front surface and a rear surface, includes a cavity on the front surface, and includes a recess on the rear surface, and the first extension part extends from a first inner surface of the cavity, The second extension part extends from the second inner surface of the cavity, and the first and second inner surfaces may face each other.

According to an embodiment of the present invention, the body includes a plurality of side surfaces between the front and rear surfaces, and the first frame and the second frame are first and second leads exposed to the first side of the plurality of side surfaces. wealth may be included.

According to an embodiment of the invention, the body may include a protrusion protruding in the direction of the first side surface between the first and second lead parts.

A light source device according to an embodiment of the present invention includes a circuit board; And one or a plurality of the light emitting device packages may be disposed on the circuit board.

According to an embodiment of the invention, by disposing a reflective or adhesive resin around the lower surface of the semiconductor element or light emitting element, it is possible to improve the adhesive strength of the element.

According to an embodiment of the present invention, the lower surface of the device may be separated from the frames by a spacer between the semiconductor device or the light emitting device and the frame, and the device may be fixed by disposing an adhesive or reflective resin in the spaced space.

According to an embodiment of the present invention, it is possible to improve the luminous flux, forward voltage, and heat resistance characteristics of a light emitting device package disposed as a flip chip on frames.

According to an embodiment of the present invention, the thermal shock caused by the difference in thermal expansion coefficient can be improved by reducing the area of the body between the frames.

According to an embodiment of the present invention, by disposing the first resin for adhesion between the semiconductor element or the light emitting element and the body, it is possible to improve the adhesive strength and support of the light emitting element.

According to an embodiment of the present invention, by disposing the first resin in the first recess of the body facing the semiconductor element or the light emitting element, it is possible to improve the adhesive strength and support of the light emitting element.

According to an embodiment of the invention, there is an advantage of improving light extraction efficiency, electrical characteristics, and reliability.

According to an embodiment of the present invention, there is an advantage of reducing manufacturing cost and improving manufacturing yield by improving package process efficiency and presenting a new package structure.

According to an embodiment of the present invention, by providing a body having high reflectivity, discoloration of the reflector can be prevented, thereby improving reliability of the semiconductor device package.

According to an embodiment of the present invention, there is an advantage in preventing a re-melting phenomenon from occurring in a bonding region of a semiconductor device package in a process of re-bonding the semiconductor device package to a substrate or the like.

According to an embodiment of the present invention, reliability of a semiconductor device package or a light emitting device package may be improved.

1 is a front view of a light emitting device package according to a first embodiment of the present invention.
FIG. 2 is an enlarged view for explaining an area where a light emitting device is disposed in the light emitting device package of FIG. 1 .
3 is an AA-side cross-sectional view of the light emitting device package of FIG. 1 .
4 is a BB-side cross-sectional view of the light emitting device package of FIG. 1 .
5 is a view showing a first recess of a body in the light emitting device package of FIG. 1;
Figure 6 is a side cross-sectional view of the package having a recess in the body of Figure 5;
7 is a front view of a light emitting device package according to a second embodiment of the present invention.
FIG. 8 is a view showing the inside of a cavity in the light emitting device package of FIG. 7 .
9 is a CC-side cross-sectional view of the light emitting device package of FIG. 7 .
10 is a front view illustrating a modified example of the light emitting device package according to the second embodiment.
FIG. 11 is an example of a light source device having the light emitting device package of FIG. 1 .
12 is an example of a light emitting device applied to the embodiment(s) of the present invention.

An embodiment will be described below with reference to the accompanying drawings. In the description of the embodiment, each layer (film), region, pattern or structure is "on/over" or "under" the substrate, each layer (film), region, pad or pattern. In the case where it is described as being formed in, "on/over" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criterion for the top/top or bottom of each layer will be described based on the drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The semiconductor device of the device package may include a light emitting device that emits light of ultraviolet rays, infrared rays, or visible rays. Hereinafter, a description will be given based on the case where a light emitting element is applied as an example of a semiconductor device, and a package or light source device to which the light emitting element is applied may include a non-light emitting element such as a zener diode or a sensing element for monitoring wavelength or heat. can Hereinafter, a case in which a light emitting device is applied as an example of a semiconductor device will be described, and a light emitting device package will be described in detail.

<First Embodiment>

1 is a front view of a light emitting device package according to a first embodiment of the present invention, FIG. 2 is an enlarged view for explaining an area where a light emitting device is disposed in the light emitting device package of FIG. 1, and FIG. 3 is a light emitting device of FIG. 1 A-A side cross-sectional view of the package, and FIG. 4 is a B-B-side cross-sectional view of the light emitting device package of FIG. 1 .

Referring to FIGS. 1 to 4 , the light emitting device package 100 may include a package body 110 and a light emitting device 120 .

The package body 110 may include a plurality of frames. The plurality of frames may include, for example, a first frame 111 and a second frame 113 . The first frame 111 and the second frame 113 may be spaced apart from each other in the first direction (X).

The package body 110 may include a body 115. The body 115 may be disposed between the first frame 111 and the second frame 113 . The body 115 may function as an electrode separation line between a plurality of frames. The body 115 may also be referred to as an insulating member.

The body 115 may be disposed on the first frame 111 . Also, the body 115 may be disposed on the second frame 113 . The body 115 may provide an inclined inner surface 132 disposed on the first frame 111 and the second frame 113 . A cavity 102 may be provided on the first frame 111 and the second frame 113 by the inclined inner surface 132 of the body 115 . According to an embodiment of the invention, the package body 110 may be provided in a structure with a cavity 102, or may be provided in a structure with a flat upper surface without the cavity 102. An upper body 110A is disposed on the body 115, and the upper body 110A may have a cavity 102. The upper body 110A may be made of the same material as the body 115 or a different material.

For example, the body 115 may include polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy, and epoxy molding compound (EMC). ), silicon molding compound (SMC), ceramics, photo sensitive glass (PSG), and sapphire (Al ₂ O ₃ ). The body 115 may be formed of a resin material, and Al ₂ O ₃ , TiO ₂ and SiO ₂ are formed therein. It may contain at least one filler among them.

The upper body 110A may be formed of resin or insulating material. The upper body 110A is made of polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy, epoxy molding compound (EMC), It may be formed of at least one selected from a group including silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. The upper body 110A may function as a reflective body.

The length of the package body 110 in the first direction (X) may be more than twice as long as the length in the second direction (Z). Here, the first direction may be a direction of a side having a longer length among the lengths of the first and second directions of the light emitting device 120 . The second direction (Z) is a direction of the short side and may be a direction perpendicular to the first direction (X), and the third direction (Y) is a direction from the front side (S0) to the rear side (S6) or vice versa. direction can be

The package body 110 or body 115 may include a front surface S0, a plurality of side surfaces S1, S2, S3, and S4, and a rear surface S6. The front surface S0 may be a surface on which the cavity 102 is disposed and may be a surface from which light is emitted. The rear surface S6 may be a surface opposite to the front surface S0 of the package body 110 . The cavity 102 may be depressed in a direction from the front surface S0 to the rear surface. A concave portion R2 may be disposed in an area corresponding to the light emitting device 120 on the rear surface S6. The side surfaces S1, S2, S3, and S4 of the body 115 are first and second side surfaces S1 and S2 disposed on both sides in the second direction Y and both sides in the first direction X. It may include disposed third and fourth side surfaces S3 and S4. The first side surface S1 may be the bottom of the package body 110 or body 115 in FIG. 1 . The first side surface S1 may be a surface facing the circuit board ( 201 in FIG. 11 ). The second side surface S2 may be an upper surface portion of the package body 110 or body 115 in FIG. 1 . The third side surface S3 and the fourth side surface S4 may be connected to both ends of the first and second side surfaces S1 and S2.

First and second frames 111 and 113, a body 115, and a light emitting device 120 may be disposed on the bottom of the cavity 102 . The thickness T1 of the package body 110 is the distance between the first and second side surfaces S1 and S2, and may be 1.2 mm or less, for example, 1 mm or less. The length of the package body 110 in the first direction may be 3 times or more, for example, 4 times or more than the thickness T1. The length of the package body 110 in the first direction may be 2.5 mm or more, for example, 2.7 mm to 4.5 mm. Since the light emitting device packages 100 have a long length in the first direction, when the light emitting device packages 100 are arranged in the first direction, the number of light emitting device packages 100 can be reduced. Since the light emitting device package 100 may have a relatively thin thickness T1 , the thickness of the light unit having the light emitting device package 100 may be reduced. Since the front surface S0 of the cavity 102 is open and light is emitted, the cavity 102 may be a region emitting light in a side view type based on the first side surface S1.

The inner surface 132 disposed on the outer circumference of the cavity 102 may be inclined or vertical, and for example, the inclined surface may be inclined in one or more steps or two or more steps. The inclined inner surface 132 may include a first inner surface S11 and a second inner surface S12 facing each other in a first direction, and the first inner surface S11 is a third side surface ( S3), and the second inner side surface S12 may be adjacent to the fourth side surface S4. The first and second inner surfaces S11 and S12 may have inclination angles smaller than the inclination angles of the inner surfaces adjacent to the first and second side surfaces S1 and S2, thereby increasing the reflection efficiency through the gently inclined surfaces. can give

The light emitting device 120 may overlap the frames 111 and 113 and the body 115 in the second direction (Z axis). The frames 111 and 113 and the body 115 may be disposed between the light emitting device 120 and the rear surface S6. The light emitting device 120 may overlap the frames 111 and 113 in a horizontal direction or a second direction (Z axis).

The first frame 111 includes a first lead part 17 that is bent at a portion extending in the direction of the third side surface S3 and protrudes to one side of the first side surface S1, and the first lead part ( 17) may function as a bonding pad. The first frame 111 may include a first heat dissipation part 17A bent from the first lead part 17 and disposed on the rear part of the third side surface S3. The second frame 113 includes a second lead part 37 that is bent at a portion extending in the direction of the fourth side surface S4 and protrudes to the other side of the first side surface S1, and the second lead part ( 37) may function as a bonding pad. The second frame 113 may include a second heat dissipation part 37A bent from the second lead part 37 and disposed on the rear surface of the fourth side surface S3. One area of the first side surface S1 may be an area adjacent to the third side surface S3, and the other area may be an area adjacent to the fourth side surface S4.

The body 115 or the package body 110 may include grooves Rf1 and Rf2 in which hangers coupled during injection molding are disposed on the third side surface S3 and the fourth side surface S4. The grooves Rf1 and Rf2 may be concavely disposed inward from the third and fourth side surfaces S3 and S4.

As shown in FIG. 1, the body 115 protrudes from the second side surface S2 to the first side surface S1, and the protrusion 105 to be protruded on the first and second lead parts 17 and 37 can include The bottom, that is, the first side surface S1 of the protrusion 105 may be provided as a flat surface. The bottom of the protruding part 105 may protrude more than both sides of the first side surface S1 where the first and second lead parts 17 and 37 are disposed.

The first frame 111 and the second frame 113 may be provided as conductive frames. The first frame 111 and the second frame 113 may be provided as metal frames. The metal frame is, for example, copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag) ), and may be formed in a single layer or multiple layers. The thickness of the first and second frames 111 and 113 may be formed in consideration of heat dissipation characteristics and electrical conductivity characteristics, and may be formed in a range of 120 micrometers or more, for example, 120 to 250 micrometers. The first frame 111 and the second frame 113 may stably provide structural strength of the package body 110 and may be electrically connected to the light emitting device 120 .

As another example, the first frame 111 and the second frame 113 may be provided as insulating frames. The first frame 111 and the second frame 113 may stably provide structural strength of the package body 110 . When the frames 111 and 113 are made of an insulating material, they may be made of a resin material or an insulating material, for example, polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), It may be formed of at least one selected from a group including silicon, epoxy molding compound (EMC), silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like.

According to an embodiment of the invention, the light emitting device 120 may include a first bonding portion 121 , a second bonding portion 122 , and a light emitting structure 123 . The light emitting device 120 may include a substrate 124 . As shown in FIG. 2 , the length of one side (x1) or the long side of the light emitting device 120 may be greater than the length of the other side (y1) or the short side. The length y1 in the third direction may be smaller than the bottom width a1 of the cavity 102 .

The light emitting structure 123 may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. According to an embodiment of the invention, the light emitting structure 123 may be provided as a compound semiconductor. For example, the light emitting structure 123 may be provided as a Group 2-6 or Group 3-5 compound semiconductor. For example, the light emitting structure 123 includes at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). It can be.

The first and second conductivity-type semiconductor layers may be implemented with at least one of group 3-5 or group 2-6 compound semiconductors. The first and second conductive semiconductor layers are formed of, for example, a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It can be. For example, the first and second conductivity type semiconductor layers may include at least one selected from a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductivity-type semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductivity-type semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The active layer may be implemented as a compound semiconductor. For example, the active layer may be implemented with at least one of Group 3-5 or Group 2-6 compound semiconductors. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers alternately disposed, In _x Al _y Ga _{1 -x- y} N (0≤x≤1 , 0≤y≤1, 0≤x+y≤1) may be arranged as a semiconductor material having a composition formula. For example, the active layer is selected from a group including InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, and InP/GaAs. may contain at least one.

The active layer may be disposed more adjacent to the first and second frames 111 and 113 than the upper surface of the light emitting structure 123 . The first bonding part 121 may be electrically connected to the first conductivity type semiconductor layer. The second bonding portion 122 may be electrically connected to the second conductivity type semiconductor layer.

The substrate 124 is a light-transmitting layer and may be formed of an insulating material or a semiconductor material. The substrate 124 may be selected from a group including, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, a concave-convex pattern may be formed on the surface of the substrate 124 .

The light emitting device 120 may be disposed on the package body 110 . The light emitting device 120 may be disposed on the first frame 111 and the second frame 113 . The light emitting device 120 may be disposed on the body 115 . The light emitting device 120 may be disposed within the cavity 102 provided by the package body 110 . The cavity 102 may be formed by the upper body 110A of the package body 110 . The upper body 110A may be disposed around the light emitting device 120 .

The first bonding part 121 and the second bonding part 122 may be spaced apart from each other on the lower surface of the light emitting device 120 . The first bonding part 121 may be disposed on the first frame 111 . The second bonding part 122 may be disposed on the second frame 113 . The first bonding part 121 may face the first frame 111 , and the second bonding part 122 may face the second frame 113 .

In the light emitting device package 100 according to an embodiment of the present invention, power is connected to the first bonding part 121 of the light emitting device 120 through the first frame 111, and the second frame 113 Power may be connected to the second bonding portion 122 of the light emitting element 120 through the power supply. The first and second bonding parts 121 and 352 may be electrodes or pads. Accordingly, the light emitting element 120 can be driven by driving power supplied through the first bonding part 121 and the second bonding part 122 . In addition, light emitted from the light emitting device 120 may be provided in an upper direction of the package body 110 .

The first bonding part 121 may be disposed between the light emitting structure 123 and the first frame 111 . The second bonding part 122 may be disposed between the light emitting structure 123 and the second frame 113 . The first bonding part 121 and the second bonding part 122 may be made of a metal material. The first and second bonding parts 121 and 122 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO may be formed using one or more materials or alloys selected from the group consisting of a single layer or multiple layers.

The light emitting device 120 may include one or a plurality of light emitting cells therein. The light emitting cell may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected in series to each other within one light emitting device. Accordingly, the light emitting device may have one or a plurality of light emitting cells, and when n light emitting cells are disposed in one light emitting device, it may be driven with n times the driving voltage. For example, when the driving voltage of one light emitting cell is 3V and two light emitting cells are disposed in one light emitting device, each light emitting device can be driven with a driving voltage of 6V. Alternatively, when the driving voltage of one light emitting cell is 3V and three light emitting cells are disposed in one light emitting device, each light emitting device may be driven with a driving voltage of 9V. The number of light emitting cells disposed in the light emitting device may be 1 or 2 to 5.

As shown in FIGS. 2 to 4 , the light emitting device package 100 of the present invention may include a first resin 160 made of an adhesive material between the body 115 and the light emitting device 120 . The first resin 160 may be disposed between the body 115 and the light emitting element 120 . The first resin 160 may be disposed between the upper surface of the body 115 and the lower surface of the light emitting element 120 . The first resin 160 may overlap the light emitting device 120 in a horizontal direction or a Z-axis direction. For example, the first resin 160 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. can Also, as an example, when the first resin 160 includes a reflective function, the adhesive may include white silicone. The first resin 160 may include a filler such as TiO ₂ , SiO ₂ , or Al ₂ O ₃ therein.

The first resin 160 may be adhered to the light emitting element 120 and the body 115 . The first resin 160 may be disposed between the first bonding part 121 and the second bonding part 122 of the light emitting device 120 or may come into contact with the first and second bonding parts 121 and 122 . . The first resin 160 may be adhered to a region between the lower surface of the light emitting device 120 and the frames 111 and 113 and a region between the light emitting device 120 and the body 115 . Accordingly, the first resin 160 may reinforce the lower adhesive force and supporting force of the light emitting element 120 . A problem in which the light emitting element 120 is tilted during a process of bonding the bonding parts 121 and 122 of the light emitting element 120 or when bonding on a circuit board can be prevented. The first resin 160 may be formed of a reflective resin material to diffuse light and improve reflection efficiency.

The light emitting device package 100 according to the present invention may include a first spacer 55 and a second spacer 57 as shown in FIGS. 2 to 4 . The first and second spacers 55 and 57 may separate corner regions of the lower surface of the light emitting device 120 from the upper surfaces of the first and second frames 111 and 113 .

At the bottom of the cavity 102, a first extension part 135 extending from the first inner surface S11 to the second inner surface S12 of the cavity 102, and from the second inner surface S12 A second extension part 137 extending in the direction of the first inner surface S11 may be included. The first extension part 135 is disposed on the first frame 111 and may extend from the first inner surface S11 of the cavity 102 .

The second extension part 137 is disposed on the second frame 113 and may extend to the second inner surface S12 of the cavity 102 . The first extension part 135 may be disposed between the first frame 111 exposed on the bottom of the cavity 102 and the first inner surface S11. The second extension part 137 may be disposed between the second frame 113 exposed on the bottom of the cavity 102 and the second inner surface S12.

The first extension part 135 may extend from the first inner surface S11 of the cavity 102 toward the first bonding part 121 of the light emitting device 120 . The second extension part 137 may extend from the second inner surface S12 of the cavity 102 toward the second bonding part 122 of the light emitting element 120 .

The first extension part 135 may include a first spacer 55 overlapping the light emitting element 120 in a horizontal direction or a third direction (Z-axis). The second extension part 137 may include a second spacer 57 overlapping the light emitting element 120 in a horizontal direction or a third direction.

The first and second spacers 55 and 57 separate the lower surfaces of the light emitting element 120 and the lower surfaces of the first and second bonding parts 121 and 122 from the first and second frames 111 and 113. can give The first spacer 55 is a portion overlapping the light emitting element 120 in the first extension part 135, and the second spacer 57 is the light emitting element 120 in the second extension part 137. It may be a part overlapping with . The first and second spacers 55 and 57 may face the light emitting element 120 . The third direction may be a horizontal direction when packages are arranged as shown in FIG. 1 and may be a vertical direction when packages are arranged as shown in FIG. 3 . For convenience of explanation, the third direction will be described as a horizontal direction based on the shape in which the package is mounted as shown in FIG. 1 .

As shown in FIGS. 3 and 4 , the first and second extension parts 135 and 137 may be provided with a predetermined thickness T2 from the upper surfaces of the first frames 111 and 113 . The first and second extension parts 135 and 137 may be provided with the same thickness as the thickness T2 of the first and second spacers 55 and 57 . The thickness T2 of the first and second extension parts 135 and 137 may be less than 60 micrometers, for example, in the range of 40 to 60 micrometers. When the thickness T2 of the first and second extension parts 135 and 137 is disposed within the above range, the first and second bonding parts 121 and 122 and the first and second frames 111 and 113 are disposed The conductive parts 181 and 183 may be provided with a uniform thickness. Therefore, electrical reliability with the bonding parts 121 and 122 can be improved by preventing an open defect caused by the conductive parts 181 and 183 disposed on the first and second frames 111 and 113 .

Here, the first spacer 55 may be disposed below the side surface adjacent to the first inner side surface S11 among the side surfaces of the light emitting device 120 . Among the side surfaces of the light emitting device 120, the first spacer 55 may be disposed to overlap both corners of a side surface adjacent to the first inner side surface S11. The first spacer 55 may be disposed in an area corresponding to an outer corner of the first bonding part 121 . The first spacer 55 separates the lower surface of the light emitting device 120 or the first bonding part 121 from the upper surface of the first frame 111 . Here, the overlapping direction of the first spacer 55 and the light emitting element 120 may be a horizontal direction based on FIG. 1 and a vertical direction based on FIGS. 3 and 4 .

Here, the second spacer 57 may be disposed under a side surface of the light emitting device 120 adjacent to the second inner side surface S12. The second spacer 57 may be disposed to overlap both corners of a side surface of the light emitting device 120 adjacent to the second inner side surface S12 . The second spacer 57 may be disposed to correspond to an outer corner of the second bonding part 122 . The second spacer 57 separates the lower surface of the light emitting element 120 or the second bonding part 122 from the upper surface of the second frame 113 . Here, the overlapping direction of the second spacer 57 and the light emitting element 120 may be a horizontal direction based on FIG. 1 and a vertical direction based on FIGS. 3 and 4 .

As shown in FIG. 2 , the minimum distance between the first spacers 55 spaced apart in the second direction (Y-axis) from the first extension part 135 is the length of the short side among the sides of the light emitting element 120 (y1) It can be shorter, so both corners of the light emitting device 120 can be supported. The minimum distance between the second spacers 57 spaced apart in the Y-axis direction from the second extension part 137 may be shorter than the length y1 of the short side among the sides of the light emitting element 120, so that the light emitting element 120 ) can be supported at both corners.

At the bottom of the cavity 102, the upper surface of the body 115 and the upper surfaces of the first and second frames 111 and 113 may be disposed on the same horizontal plane. The first and second spacers 55 and 57 may be higher than the upper surface of the body 115 or protrude in the Z-axis direction.

The first and second extensions 135 and 137 may be connected to each other through third and fourth extensions 138 and 139 extending from other inner surfaces of the cavity 102 . The third and fourth extension portions 138 and 139 may correspond to the long side of the light emitting device 120 to serve as a dam.

Referring to the area between the first and second extension parts 135 and 137 with reference to FIG. 2, the first area 50 between the body 115 and the first extension part 135 is the first frame. An upper surface of 111 may be an exposed area. The first area 50 is an area lower than the first extension part 135, and the first bonding part 121 may be disposed thereon. The first region 50 includes a first concave portion Rc1 concave toward the first inner surface S11, and a second resin 162 may be disposed in the first concave portion Rc1. . The second resin 162 may be disposed in the first concave portion Rc1 and adhered to the lower surface of the light emitting element 120 . An end of the first concave portion Rc1 may be disposed outside the side surface of the light emitting device 120 or may be an area that does not overlap with the light emitting device 120 . The second resin 162 may extend from the lower circumference of the light emitting device 120 along the first region 50 .

A part of the first extension part 135 , that is, the first spacer 55 may be disposed between the light emitting device 120 and the first frame 111 . A part of the second extension part 137, that is, the second spacer 57 may be disposed between the light emitting device 120 and the second frame 113.

Here, the second area 52 between the body 115 and the second extension part 137 may be an area where the upper surface of the second frame 113 is exposed. The second area 52 is an area lower than the second extension part 137, and the second bonding part 122 may be disposed thereon. The second region 52 includes a second concave portion Rc2 concave toward the second inner surface S12, and a second resin 162 may be disposed in the second concave portion Rc2. .

The second resin 162 may be disposed in the second concave portion Rc2 and adhered to the lower surface of the light emitting element 120 . An end of the second concave portion Rc2 may be disposed outside the side surface of the light emitting device 120 or may be an area that does not overlap with the light emitting device 120 . Side surfaces of the first and second bonding parts 121 and 122 may contact the second resin 162 . The second resin 162 may extend from the lower circumference of the light emitting device 120 along the second region 52 . The second resin 162 may extend through the first and second regions 50 and 52 and be connected to the first resin 160 .

The second resin 162 may include, for example, at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. can In addition, the second resin 162 may be an extension that reflects light emitted from the light emitting element 120, and may be, for example, a resin containing a reflective material such as TiO ₂ or white silicone. can include The second resin 162 is made of a material different from that of the molding part 190 or contains a different kind of impurity (eg, metal oxide) from the type of impurities (eg, phosphor) that can be added to the molding part 190. can do. The second resin 162 may be formed of the same material as the first resin 160 and may contain the same or different impurities.

When the first region 50 is divided in the X-axis direction, the bonding region Ra, which is adjacent to the body 115 and has the same width in the Y-axis direction, and the first region 50 has a gradually narrower width based on the same width, and 1 may include a support and adhesive region Rb extending in the direction of the inner surface S11. The first concave portion Rc1 may be disposed in the support and adhesion region Rb, and first spacers 55 may be disposed on both sides of the first concave portion Rc1. The second area 52 may be the same as the first area 50 when divided in the X-axis direction, for example, a bonding area having the same width and a gradually narrower width based on the same width, and the second area 52 It may include a support and adhesive area extending in the direction of the inner surface ( S12 ). The second concave portion Rc2 may be disposed in the support and adhesion area, and second spacers 57 may be disposed on both sides of the second concave portion Rc2.

The same width in the first and second regions 50 and 52 may be equal to or greater than the length y2 of the short side of the light emitting device 120 . Accordingly, the second resin 162 may be attached to both sides of the first and second regions 50 and 52 along the lower surface of the light emitting device 120 . The maximum length b2 of each of the first or second regions 50 and 52 in the first direction is the maximum distance between the body 115 and the first or second extension parts 135 and 137, and It may be greater than the length (x2) of the second bonding parts 121 and 122 . The maximum length b2 of each of the first or second regions 50 and 52 in the first direction may be greater than a distance from the center of the light emitting element 120 to any short side. Accordingly, the first and second bonding parts 121 and 122 may be disposed in the first and second regions 50 and 52, respectively, and the light emitting element 120 is bonded with the first and second resins 160 and 162, The light emitting device 120 may be spaced apart by the first and second spacers 55 and 57 .

2, the maximum length b1 between the first or second regions 50 and 52 in the first direction may be greater than the length x1 of the light emitting element 120 in the first direction, so that the first Parts of the first and second concave portions Rc1 and Rc2 may be exposed from the light emitting device 120 . The first and second regions 50 and 52 are arranged at gradually narrower intervals toward the first and second inner surfaces S11 and S12 and are smaller than the width of the first and second bonding parts 121 and 122 in the Y direction. Since it is narrowly arranged, tilting of the first and second bonding parts 121 and 122 can be suppressed.

Here, the body 115 exposed between the first and second frames 111 and 113 may be smaller than the bottom width a1 of the cavity 102 in the Y-axis direction. This is because the third and fourth extension parts 138 and 139 extending the inner surface of the cavity 102 may be disposed in the Y-axis direction of the body 115, so that the first and second resins 160 and 162 or the conductive parts 181 and 182 It can act as a dam to prevent flooding. The first and second extensions 135 and 137 and the third and fourth extensions 138 and 139 may serve as dams to prevent the second resin 162 or the conductive parts 181 and 182 from overflowing.

Conductive parts 181 and 182 may be disposed between the respective frames 111 and 113 and the respective bonding parts 121 and 122 . The conductive parts 181 and 182 may include one material selected from a group including Ag, Au, Pt, Sn, Cu, Zn, In, Bi, contact, Ti, or the like, or an alloy thereof. The conductive parts 181 and 183 are conductive paste and may be formed by mixing powder particles or particle particles and flux. The solder paste may include Sn-Ag-Cu, and the weight % of each metal may vary. The conductive parts 181 and 183 may include SAC (Sn-Ag-Cu) or SAC-based materials. For example, the conductive parts 181 and 183 may be formed using conductive paste. The conductive paste may include solder paste, silver paste, and the like, and may be composed of multiple layers composed of different materials or multiple layers or single layers composed of alloys.

Each of the frames 111 and 113 and each of the bonding parts 121 and 122 may be coupled by an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , wherein x satisfies the conditions of 0<x<1, y=1-x, x>y can

The first frame 111 may be electrically connected to the first bonding portion 121 and the first conductive portion 181 . The second frame 113 may be electrically connected to the second bonding part 122 and the second conductive part 183 . The first frame 111 and the first bonding part 121 may come into contact with the first conductive part 181 . The second frame 113 and the second bonding part 122 may come into contact with the second conductive part 183 .

In the reflow process, when the first and second conductive parts 181 and 183 are remelted, the first extension part 135 made of a resin material disposed around the outer circumference of the first conductive part 181 The flow of the conductive part 181 may be suppressed. The second extension part 137 made of a resin material disposed on the outer circumference of the second conductive part 183 may suppress the flow of the second conductive part 183 . In addition, since the first and second bonding parts 121 and 122 and the lower surface of the light emitting element 120 are bonded to the first and second resins, even if the reflow process is performed, the light emitting element 120 is tilted or moved. can be prevented from becoming

The bonding parts 121 and 122 of the light emitting element 120 are bonded to the material constituting the conductive parts 181 and 183 during the process of forming the conductive parts 181 and 183 or during the heat treatment process after the conductive parts 181 and 183 are provided, the conductive parts 181 and 183 are formed. An intermetallic compound (IMC) layer may be formed between the portions 181 and 183 and the frames 111 and 113 .

Here, an alloy layer may be formed by a combination between a material constituting the conductive parts 181 and 183 and a metal of the frames 111 and 113 . Accordingly, the conductive parts 181 and 183 and the frames 111 and 113 can be physically and electrically stably coupled. The conductive parts 181 and 183, the alloy layer, and the frame can be physically and electrically stably coupled. The alloy layer may include at least one intermetallic compound layer selected from a group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by combining a first material and a second material, the first material may be provided from the conductive parts 181 and 183, and the second material may be provided from the bonding parts 121 and 122 or the frames 111 and 113 ) can be provided.

When the conductive parts 181 and 183 include a Sn material and the metal layer includes an Ag material, metal of AgSn is formed by a combination of the Sn material and the Ag material during the process of providing the conductive parts 181 and 183 or the heat treatment process after providing the conductive parts 181 and 183 . A liver compound layer may be formed.

Alternatively, when the conductive parts 181 and 183 include a Sn material and the metal layer includes an Au material, AuSn is formed by a combination of the Sn material and the Au material during the process of providing the conductive parts 181 and 183 or the heat treatment process after providing the conductive parts 181 and 183. An intermetallic compound layer of may be formed.

Alternatively, when the conductive parts 321 and 323 include a Sn material and the metal layers of the frames 111 and 113 include a Cu material, during the process of providing the conductive parts 181 and 183 or a heat treatment process after providing the Sn material and An intermetallic compound layer of CuSn may be formed by combining Cu materials.

Alternatively, when the conductive parts 181 and 183 include an Ag material and the metal layer or some layers of the frames 111 and 113 include a Sn material, during the process of providing the conductive parts 181 and 183 or a heat treatment process after the provision of the Ag material An intermetallic compound layer of AgSn may be formed by the combination of and Sn material.

The intermetallic compound layer described above may have a higher melting point than other bonding materials. In addition, the heat treatment process for forming the metallic compound layer may be performed at a lower temperature than the melting point of a general bonding material. Therefore, since the re-melting phenomenon does not occur even when the light emitting device package 100 according to the embodiment is bonded to the main substrate through a reflow process, electrical connection and physical bonding strength are not deteriorated. There are advantages.

In addition, according to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, the package body does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body from being damaged or discolored due to exposure to high temperatures. Accordingly, the range of selection for the material constituting the body 115 can be widened. According to the embodiment, the body 115 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic.

The second resin 162 may be disposed around the lower portion of the light emitting device 120 . The second resin 162 may be disposed on the frames 111 and 113 and the body 115 . The second resin 162 may contact the lower surface of the light emitting device 120 . A portion of the second resin 162 may contact the lower side of the light emitting device 120 . The second resin 162 may reflect light emitted from the light emitting device 120 in a lateral direction. The thickness of the second resin 162 may be equal to or smaller than the distance between the light emitting element 120 and the frames 111 and 113, and the height of the upper surface of the light emitting element 120 is lower than that of the upper surface of the light emitting structure 123. It can be.

The light emitting device package 100 according to an embodiment of the present invention may include a molding part 190 . The molding part 190 may be provided on the light emitting device 120 . The molding part 190 may be disposed in the cavity 102 provided by the package body 110 .

The molding part 190 may include a transparent material. In addition, the molding part 190 may include a wavelength conversion means for receiving light emitted from the light emitting device 120 and providing wavelength-converted light. For example, the molding part 190 may be formed of at least one material selected from a group including phosphors and quantum dots. The light emitting device 120 may emit blue, green, red, white, infrared or ultraviolet light. The phosphor or quantum dot may emit blue, green, or red light. The molding part 190 may not be formed.

In the light emitting device package 100, the light emitting device 120 disposed in the cavity 102 by flip chip bonding is placed on the frames 111 and 113 and fixed with resin, and the lower lead portions 17 and 37 are sub It may be supplied mounted on a mount or circuit board. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high-temperature process such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in a bonding region between the frame provided in the light emitting device package and the light emitting device, so that stability of electrical connection and physical coupling may be weakened.

The first bonding part 121 and the second bonding part 122 of the light emitting device 120 according to an embodiment of the present invention provide driving power through at least one or both of the frames 111 and 113 and the conductive parts 181 and 183. can receive Also, the melting point of the conductive parts 181 and 183 may be selected to have a higher melting point than that of other bonding materials. Therefore, since the re-melting phenomenon does not occur even when the light emitting device device package 100 according to the embodiment of the present invention is bonded to the main substrate through a reflow process, electrical connection and physical bonding force are improved. It has the advantage of not deteriorating. In addition, according to the light emitting device package 100 according to the embodiment of the present invention, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to an embodiment of the present invention, it is possible to prevent the package body 110 from being damaged or discolored due to exposure to high temperatures.

Accordingly, the range of selection for the material constituting the body 115 can be widened. According to an embodiment of the present invention, the body 115 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic. For example, the body 115 includes at least one material selected from the group consisting of PolyPhtal Amide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, Epoxy Molding Compound (EMC) resin, and Silicone Molding Compound (SMC) resin. can do.

Referring to FIGS. 5 and 6 , the light emitting device package may include a first recess R1. The first recess R1 may be provided on the body 115 disposed between the first and second frames 111 and 113 or on the upper portion of the body 115 . The first recess R1 may overlap the light emitting device 120 in a horizontal direction on the body 115 between the first frame 111 and the second frame 113 .

The first recess R1 of the body 115 may be disposed in a center area between the first frame 111 and the second frame 113 . The first recess R1 may be provided concavely from the upper surface of the body 115 to the lower surface thereof. The first recess R1 may be disposed below the light emitting device 120 . At least a part or all of the first recess R1 may be overlapped with the light emitting device 120 in the Z direction. The length of the first recess R1 in the Y direction may be greater than the width in the X direction. A length of the first recess R1 in the Y direction may be smaller than a bottom width of the cavity 102 . A length of the first recess R1 in the Y direction may be smaller than a length of the light emitting device 120 in the Y direction. Since the first recess R1 is disposed on the body 115, the first resin 160 may be disposed within the first recess R1. The first resin 160 disposed in the first recess R1 may function as a support protrusion. The first recess R1 of the body 115 may be spaced apart from the first frame 111 and the second frame 113 .

The first resin 160 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The first resin 160 may provide a stable fixing force between the light emitting device 120 and the body 115 . The first resin 160, for example, directly contacts the upper surface of the body 115, is disposed in the first recess R1, and contacts the lower surface of the light emitting element 120, so that the light emitting element ( 120) can be supported.

The first resin 160 can provide a stable fixing force between the body 115 and the light emitting element 120, and when light is emitted from the lower surface of the light emitting element 120, the light emitting element 120 A light diffusing function may be provided between the and the body 115 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the first resin 160 provides a light diffusing function, thereby improving light extraction efficiency of the light emitting device package 100. there is. In addition, the first resin 160 may reflect light emitted from the light emitting device 120 .

According to an embodiment of the present invention, the depth of the first recess R1 may be provided smaller than the thickness of the first and second frames 111 and 113 . The depth of the first recess R1 may be determined in consideration of the adhesive strength of the first resin 160 . The depth of the first recess R1 may be, for example, 10 micrometers or more, for example, 10 to 50 micrometers. In addition, the depth of the first recess R1 takes into account the stable strength of the body 115 and/or cracks in the light emitting device package 100 due to heat emitted from the light emitting device 120. It can be determined that this does not occur.

The first recess R1 may provide an appropriate space under the light emitting device 120 in which an underfill process may be performed. Here, the under fill process may be a process of mounting the light emitting device 120 on the package body 110 and disposing the first resin 160 below the light emitting device 120, In the process of mounting the device 120 on the package body 110, in order to mount the device 120 through the first resin 160, the light emitting device ( 120) may be a process of arranging. The first resin 160 attaches the light emitting element 120 to the body 115, so even if the bonded portion of the light emitting element 120 is remelted in a reflow process, the light emitting element 120 is attached to the body 115. The light emitting device 120 may be fixed.

The length of the first recess R1 in the third direction (Y) is smaller than the length of the light emitting device 120 in the Y direction, so that the first resin 160 is formed under the light emitting device 120. It may function as a support protrusion or enhance adhesive force with the light emitting element 120 .

The top view of the first recess R1 may have a circular, elliptical, or polygonal shape, for example, a triangular, quadrangular, or pentagonal shape. As another example, the first recess R1 may have a circular shape or an elliptical shape, and may be provided in a shape capable of containing the first resin 160 . The first recess R1 may have a polygonal shape or a curved shape, for example, a triangular shape, a quadrangular shape, or a hemispherical shape. The structure of the first recess (R1) may be provided with a structure in which the supporting force is not lowered while reducing the influence on the body (115).

An upper width of the first recess R1 may be wider than a lower width in the first direction X. An upper width of the first recess R1 may be wider than a lower width in the first and third directions (X, Y). The first recess R1 may be formed in a shape in which an upper width is wider than a lower width in the first direction. Since the first recess R1 has a polygonal shape and has an upper width wider than a lower width, the inside of the first recess R1 may be provided as an inclined surface. Accordingly, the first resin 160 may be guided and supported in the first recess R1. As another example, the first recess R1 may be removed from the body 115, and the first resin 160 may be disposed between the upper surface of the body 115 and the light emitting element 120. can

The second resin 162 may further extend on the first and second extension parts 135 and 137 . The second resin may contact a side surface of the light emitting device 120 .

<Second Embodiment>

7 is a front view of a light emitting device package according to a second embodiment of the present invention, FIG. 8 is a view showing the inside of a cavity in the light emitting device package of FIG. 7 , and FIG. 9 is a C-C side cross-sectional view of the light emitting device package of FIG. 7 . In describing the second embodiment, the same parts as the first embodiment will be selectively applied with reference to the configuration of the first embodiment.

Referring to FIGS. 7 to 9 , the light emitting device package 100A may include a package body 110 and a light emitting device 120 . The package body 110 may include a first frame 111 , a second frame 113 and a body 115 .

The first frame 111 corresponds to the first bonding part 121 of the light emitting device 120 and may be electrically connected to the first bonding part 121 through the first conductive part 181 . The second frame 113 corresponds to the second bonding part 122 of the light emitting element 120 and may be electrically connected to the second bonding part 122 through the second conductive part 182 .

The first spacer 55A may be disposed between the first frame 111 and the first inner surface S11 of the cavity 102 . The first spacer 55A may protrude from the first extension 115A disposed on the bottom of the cavity 102 . The first spacer 55A may be spaced apart from inner surfaces of the cavity 102 and protrude in a stepped structure. The first spacer 55A may include a first extension portion 115A extending from inner surfaces of the cavity 102 to support the first spacer 55A. The first extension part 115A and the first spacer 55A may be made of the same material as each other or the same material as the body 115 .

The second spacer 57A may be disposed between the second frame 113 and the second inner surface S12 of the cavity 102 . The second spacer 57A may protrude from the second extension part 115B disposed on the bottom of the cavity 102 . The second spacer 57A is spaced apart from inner surfaces of the cavity 102 and may protrude with a stepped structure. A second extension 115B may be disposed between the second spacer 57A and inner surfaces of the cavity 102 to support the second spacer 57A. The first and second spacers 55A and 57A may be formed of the same material as the body 115 . The second extension part 115B and the second spacer 57A may be made of the same material as each other or the same material as the body 115 .

The first extension part 115A may include a first spacer 55A. The second extension part 115B may include the second spacer 55B.

The first spacer 55A may be spaced apart from the upper surface of the first frame 111 exposed to the bottom of the cavity 102 toward the first inner surface S11. The second spacer 57A may be spaced apart from the upper surface of the second frame 113 exposed on the bottom of the cavity 102 toward the second inner surface S12 . The first and second frames 111 and 113 exposed on the bottom of the cavity 102 are disposed in regions corresponding to the respective bonding parts 121 and 122, and the distance between the first and second spacers 55A and 57A is smaller than the first and second frames 111 and 113. Since it occupies a small area, it is possible to reduce the thermal expansion problem caused by the frames 111 and 113.

A portion of the first and second extension portions 115A and 115B may be disposed between the respective spacers 55A and 57A and the respective frames 111 and 113 so that the conductive portions 181 and 183 are connected to the spacers 55A and 57A. It can block diffusion in the direction. Parts of the first and second extension portions 115A and 115B may overlap the light emitting device 120 in a horizontal direction. A part of the first extension part 115A may be disposed between the light emitting element 120 and the first support part 13 of the first frame 111 . A part of the second extension part 115B may be disposed between the light emitting element 120 and the second support part 33 of the second frame 113 .

The first and second spacers 55A and 57A may separate the light emitting device 120 from the upper surfaces of the first and second frames 111 and 113 . The first and second spacers 55A and 57A may separate the first and second bonding parts 121 and 122 of the light emitting device 120 from the upper surfaces of the first and second frames 111 and 113 . Accordingly, the first and second conductive parts 181 and 183 can be provided with a uniform thickness, and electrical reliability of the light emitting element 120 can be improved.

The top view shape of the first and second spacers 55A and 57A may be circular, elliptical or polygonal. In the case of the elliptical spacers 55A and 57A, the light emitting device 120 may be supported with a small area. Since the first and second spacers 55A and 57A protrude from the material of the body 115 disposed on the bottom of the cavity, it is possible to prevent a decrease in rigidity or breakage.

Extensions 155A and 155B lower than the first and second spacers 55A and 57A may be disposed around the first and second spacers 55A and 57A. Upper surfaces of the extensions 155A and 155B may be disposed on the same plane as the upper surfaces of the first and second frames 111 and 113 . The first frame 111 and the second frame 113 may be disposed on the bottom of the cavity.

Referring to FIGS. 8 and 9 , the first frame 111 may include a first support part 13 bent from the bottom of the cavity 102 toward the rear surface. The first support part 13 may overlap the first spacer 55A in a horizontal direction or a Z-axis direction. The first support part 13 may be disposed between the bottom of the cavity 102 and the rear surface of the body 115 without being exposed to the bottom of the cavity 102 . The first support part 33 may be disposed closer to the cavity bottom than the rear surface of the body 115 . Both ends 13A and 13B of the first support part 33 are bent parts, and are connected to the first frame 111 disposed on the bottom of the cavity 102 and the internal frame 15 disposed inside the body, The bent ends 13A and 13B may be provided with a thickness smaller than the thickness T0 of the first frame 111 . The first support part 13 may be disposed to overlap the first inner surface S11 of the cavity 102 and the first spacer 55A in a horizontal direction or in a Z-axis direction.

The second frame 113 may include a second support part 33 bent from the bottom of the cavity 102 toward the rear surface. The second support part 33 may overlap the second spacer 57A in a horizontal direction or a Z-axis direction. The second support part 33 may be disposed between the bottom of the cavity 102 and the rear surface of the body 115 without being exposed to the bottom of the cavity 102 . The second support part 33 may be disposed closer to the cavity bottom than the rear surface of the body 115 . Both ends 33A and 33B of the second support part 33 are bent parts and may be connected to the second frame 113 disposed on the bottom of the cavity and the internal frame 35 disposed inside the body. The bent ends 33A and 33B may be provided with a thickness smaller than the thickness T0 of the second frame 115 . The second support part 35 may be disposed to overlap the second inner surface S12 of the cavity 102 and the second spacer 57A in a horizontal direction or in a Z-axis direction.

The first and second support parts 13 and 33 may overlap the inner surface of the cavity 102 in a horizontal direction or in a Z-axis direction. The first and second support parts 13 and 33 may have a length d3 in the first direction greater than a width d2 of the spacers 55A and 57A, so that the spacers 55A and 57A are formed in the cavity 102. ) It can stably extend and protrude from the inner surfaces (S11 and S12).

Since the first and second support parts 13 and 33 extend backward, the area of the first and second frames 111 and 113 disposed on the bottom of the cavity may be reduced. The depth d4 of the first and second support parts 13 and 33 is less than the thickness T0 of the frames 111 and 113 from the upper surfaces of the first and second frames 111 and 113 disposed on the bottom of the cavity. can be bent When the depth d4 of the first and second support parts 13 and 33 is greater than the thickness of the frame 111 and 113, the rigidity of the bent portion may decrease.

As shown in FIG. 8 , in the first and second frames 111 and 113 disposed on the bottom of the cavity 102, the areas where the bonding parts 121 and 122 are disposed are the accommodation areas 11A and 11B in the third direction (Y axis). , 31A, 31B) may be provided. The first and second frames 111 and 113 having the accommodating areas 11A, 11B, 31A, and 31B may provide wider widths in the third direction (C1, C1>C2), and the conductive parts 181 and 182 may A diffusion path to the accommodating regions 11A, 11B, 31A, and 31B may be provided. Accordingly, it is possible to prevent a problem in which the conductive parts 181 and 182 climb to the side of the cavity.

The area between the first frame 111 and the first spacer 55A and the area between the second frame 113 and the second spacer 57A have a width C2 smaller than the width C1. In this case, it is possible to prevent each of the bonding parts 111 and 113 from being tilted by the extension parts 115A and 115B disposed outside the region.

The minimum distance d1 between the first and second spacers 55A and 57A may be smaller than the length x1 of the long side direction or the X direction of the light emitting element 120, and the maximum distance of the light emitting element 120 It may be greater than the length of the long side direction or the X direction. Accordingly, the lower surface of the light emitting element 120 may be placed on a portion of the first and second spacers 55A and 57A.

The width d2 of the first and second spacers 55A and 57A may be greater than or equal to 150 micrometers, for example, in the range of 150 to 250 micrometers. When the widths d2 of the first and second spacers 55A and 57A are smaller than the above range, the light emitting device 120 may have a reduced supporting force or may be tilted.

Widths of the first and second frames 111 and 113 in the Y-axis direction at the bottom of the cavity may be smaller than the width a1 of the bottom of the cavity 102 . Since the area of the first and second frames 111 and 113 disposed on the bottom of the cavity is reduced, the thermal expansion force transmitted to the body 115 between the first and second frames 111 and 113 can be reduced. Accordingly, a problem caused by a difference in coefficient of thermal expansion between the body 115 and the frames 111 and 113 can be reduced.

9, a first resin 160 is disposed between the body 115 and the light emitting element 120, and a second resin 162 is disposed on the circumferences of the first and second spacers 55A and 57A. can be placed. The second resin 162 may be disposed on the extension portions 115A and 115B around the first and second spacers 55A and 57A and adhered to the lower surface of the light emitting device 120 . The second resin 162 may be adhered to a side surface of the light emitting device 120 .

In this case, a part of the second resin 162 is disposed higher than the upper surfaces of the first and second spacers 55A and 57A, and thus the light emitting element 120 and the first and second spacers 55A and 57A ) can be bonded between them.

The height t3 of the first and second spacers 55A and 57A may be less than 60 micrometers, for example, in the range of 40 to 60 micrometers. When the heights t3 of the first and second spacers 55A and 57A are within the above range, they are disposed between the first and second bonding parts 121 and 122 and the first and second frames 111 and 113. The conductive parts 181 and 183 may be provided with a uniform thickness. Therefore, electrical reliability with the bonding parts 121 and 122 can be improved by preventing an open defect caused by the conductive parts 181 and 183 disposed on the first and second frames 111 and 113 . When the heights t3 of the first and second spacers 55A and 57A exceed the above range, the amount of conductive parts 181 and 183 may increase and electrical reliability may be insignificantly improved. Conductive parts 181 and 183 of uniform thickness cannot be provided, and an electrical open defect problem may occur.

Since the first and second resins 160 and 162 surround the conductive parts 181 and 183 and the bonding parts 121 and 122, the diffusion of the conductive parts 181 and 183 to the inner surface of the cavity 102 can be prevented. . The second resin 162 may be thicker than the first resin 160 and may cover the first and second spacers 55A and 57A. In this case, if the first and second spacers 55A and 57A protrude and are covered with the second resin 162 than the exposed structure, the reflectance may be further improved.

10 is a modified example of the light emitting device package according to the second embodiment. 10 is a configuration including a frame structure of the second embodiment and an extension structure of the first embodiment.

Referring to FIG. 10 , light emitting elements 120 are disposed on first and second frames 111 and 113, and extension parts 135 and 137 are disposed in the cavity 102 in which the light emitting elements 120 are disposed. The extensions 135 and 137 include first and second spacers 55 and 57 and may be respectively disposed at corners of opposite sides of the light emitting device 120 .

A first region 50 on the first frame 111 of the extensions 135 and 137 and a second region 52 on the second frame 113 are open. A second resin ( 162 in FIG. 2 ) may be disposed in the first region 50 by disposing the first concave portion Rc1 in the direction of the first inner surface S11 of the cavity 102 . The second resin 162 may be disposed in the second region 52 by disposing the second concave portion Rc2 in the direction of the second inner surface S12 of the cavity 102 . As described above, the second resin 162 may be adhered to the lower surface of the light emitting device 120 .

The first frame 111 is disposed on the bottom of the cavity and faces the first bonding portion 121 of the light emitting device 120, and the first support portion 13 is bent from the first frame 111 toward the rear side. and can be placed. The first support part 13 may overlap the first concave part Rc1 in a horizontal direction or a Z-axis direction. The second frame 113 is disposed on the bottom of the cavity and faces the second bonding portion 122 of the light emitting device 120, and the second support portion 33 is bent from the second frame 113 toward the rear side. and can be placed. The second support part 33 may overlap the second concave part Rc2 in a horizontal direction or a Z-axis direction. Since the first and second support parts 13 and 33 are bent from the bottom of the cavity toward the rear surface, a decrease in rigidity of the extension parts 135 and 137 can be prevented.

In an embodiment of the present invention, the light emitting device 120 may have first and second bonding parts 121 and 122 and be flip-chip bonded on the first and second frames 111 and 113 . The light emitting device package according to the embodiment may be provided as a side-view type package that emits light to the front of the package body 110 and is bonded to the circuit board at the bottom.

In this case, the width of the first and second frames 111 and 113 in the Y-axis direction may be greater than the width of the bottom of the cavity, so that they may be combined with the inside of the reflective body.

FIG. 10 is an example of a light source device or light source module having the light emitting device package of FIG. 3 . As an example, FIG. 10 may be implemented as a light source device having a light emitting device package according to an embodiment, and will be described later with reference to the description and drawings disclosed above. The above-described embodiment(s) may be selectively applied to the light emitting device package.

Referring to FIGS. 3 and 10 , in the light source module according to the embodiment, one or a plurality of light emitting device packages 100 may be disposed on a circuit board 201 .

The circuit board 201 may be a printed circuit board (PCB). The circuit board 201 may include at least one of a resin material PCB, a metal core PCB (MCPCB), a flexible PCB (FPCB), a non-flexible PCB, and a rigid PCB.

The circuit board 201 may include a substrate member having pads 211 and 213 . A power supply circuit for controlling driving of the light emitting device 120 may be provided on the circuit board 201 . Each of the frames 111 and 113 of the light emitting device package 100 may be connected to each of the pads 211 and 213 of the circuit board 201 through bonding layers 221 and 223 . Accordingly, the light emitting device 120 of the light emitting device package 100 may receive power from the respective pads 211 and 213 of the circuit board 201 . Each of the pads 211 and 213 of the circuit board 201 is, for example, at least one selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, and Al. of or alloys thereof.

Each of the pads 211 and 213 of the circuit board 201 may be disposed to overlap the through holes TH1 and TH2 of the frames 111 and 113 . Bonding layers 221 and 223 may be provided between the respective pads 211 and 213 and the frames 111 and 113 . The bonding layers 221 and 223 may be connected to the conductive parts 321 and 323 of the frames 111 and 113 and/or the through holes TH1 and TH2 (see FIG. 3 ).

According to the light emitting device package according to the embodiment, the bonding parts 121 and 122 of the light emitting element 120 may receive driving power through the conductive parts 181 and 183 disposed on the frames 111 and 113 . In addition, the melting points of the conductive parts 181 and 183 may be selected to have a higher melting point than that of general bonding materials. The light emitting device device package according to the embodiment has an advantage in that electrical connection and physical bonding force are not deteriorated because a re-melting phenomenon does not occur even when bonded to a main substrate or the like through a reflow process. According to the light emitting device package according to the embodiment, the package body 110 and the body 115 do not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 and the body 115 from being damaged or discolored due to exposure to high temperatures.

The light emitting device package 100 according to the embodiment may be supplied mounted on a submount or a circuit board 201 . However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high-temperature process such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in the bonding area between the frame provided in the light emitting device package and the light emitting device, and thus the stability of electrical connection and physical coupling may be weakened. Accordingly, the position of the light emitting device may be weakened. Since may change, optical and electrical characteristics and reliability of the light emitting device package may be deteriorated. Therefore, in the light emitting device device package 100 according to the embodiment, the light emitting device 120 is attached to the first resin 160 and remelted even when bonded to the main substrate through a reflow process. -melting) phenomenon does not occur, so there is an advantage in that electrical connection and physical bonding strength are not deteriorated.

11 is a cross-sectional view showing an example of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.

Referring to FIG. 11 , the light emitting element conceptually illustrates only the relative arrangement relationship between the first electrode 627 and the second electrode 628 . The first electrode 627 may include a first bonding portion 621 and a first branch electrode 625 . The second electrode 628 may include a second bonding portion 622 and a second branch electrode 626 .

The light emitting device may include a light emitting structure 623 disposed on a substrate 624 . The substrate 624 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 624 may be provided as a patterned sapphire substrate (PSS) having a concavo-convex pattern formed on an upper surface thereof.

The light emitting structure 623 may include a first conductivity type semiconductor layer 623a, an active layer 623b, and a second conductivity type semiconductor layer 623c. The active layer 623b may be disposed between the first conductivity type semiconductor layer 623a and the second conductivity type semiconductor layer 623c. For example, the active layer 623b may be disposed on the first conductivity-type semiconductor layer 623a, and the second conductivity-type semiconductor layer 623c may be disposed on the active layer 623b.

According to an embodiment, the first conductivity-type semiconductor layer 623a may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 623c may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity type semiconductor layer 623a may be provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 623c may be provided as an n-type semiconductor layer.

The light emitting device may include a first electrode 627 and a second electrode 628 . The first electrode 627 may include a first bonding portion 621 and a first branch electrode 625 . The first electrode 627 may be electrically connected to the second conductivity type semiconductor layer 623c. The first branch electrode 625 may be disposed to be branched from the first bonding part 621 . The first branch electrode 625 may include a plurality of branch electrodes branched from the first bonding part 621 . The second electrode 628 may include a second bonding portion 622 and a second branch electrode 626 . The second electrode 628 may be electrically connected to the first conductivity type semiconductor layer 623a. The second branch electrode 626 may be disposed to be branched from the second bonding part 622 . The second branch electrode 626 may include a plurality of branch electrodes branched from the second bonding part 622 .

The first branch electrodes 625 and the second branch electrodes 626 may be alternately arranged in a finger shape. Power supplied through the first bonding part 621 and the second bonding part 622 by the first branch electrode 625 and the second branch electrode 626 is transmitted to the light emitting structure 623 as a whole. It can be spread and provided.

The first electrode 627 and the second electrode 628 may be formed in a single-layer or multi-layer structure. For example, the first electrode 627 and the second electrode 628 may be ohmic electrodes. For example, the first electrode 627 and the second electrode 628 may be ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni , Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, or at least one or an alloy of two or more of these materials.

Meanwhile, a protective layer may be further provided on the light emitting structure 623 . The protective layer may be provided on an upper surface of the light emitting structure 623 . Also, the protective layer may be provided on a side surface of the light emitting structure 623 . The protective layer may be provided to expose the first bonding portion 621 and the second bonding portion 622 . In addition, the protective layer may be selectively provided on the circumference and the lower surface of the substrate 624 .

For example, the protective layer may be provided with an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y It may be formed of at least one material selected from the group including.

In the light emitting device according to the embodiment, light generated in the active layer 623b may be emitted in directions of six surfaces of the light emitting device. Light generated in the active layer 623b may be emitted in six directions through the upper and lower surfaces of the light emitting device and four side surfaces.

The light emitting device has been described as a structure having one light emitting cell. When the light emitting cell includes the above light emitting structure, the driving voltage of the light emitting device may be the voltage applied to one light emitting cell. As an example of the light emitting device disclosed in the embodiment, a light emitting device having two or three or more light emitting cells may be included. Accordingly, a high voltage light emitting device package can be provided.

On the other hand, the light emitting device package 100 according to the embodiment of the invention described above may be supplied mounted on a submount or a circuit board. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high-temperature process such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in the bonding area between the frame provided in the light emitting device package and the light emitting device, and thus the stability of electrical connection and physical coupling may be weakened. Accordingly, the position of the light emitting device may be weakened. Since may change, optical and electrical characteristics and reliability of the light emitting device package may be deteriorated. However, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment of the present invention, the bonding parts of the light emitting device according to the embodiment of the present invention can receive driving power through the conductive part and can be fixed with an adhesive resin. . And, the melting point of the conductive part may be selected to have a higher value than the melting point of a general bonding material. Therefore, even when the light emitting device device package according to the embodiment of the present invention is bonded to the main substrate through a reflow process, the re-melting phenomenon does not occur, so that the electrical connection and physical bonding force are not deteriorated. There are advantages.

In addition, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment of the present invention, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to an embodiment of the present invention, it is possible to prevent the package body 110 from being damaged or discolored due to exposure to high temperatures. Accordingly, the range of selection for the material constituting the body 115 can be widened. According to an embodiment of the present invention, the body 115 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic. For example, the body 115 includes at least one material selected from the group consisting of PolyPhtal Amide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, Epoxy Molding Compound (EMC) resin, and Silicone Molding Compound (SMC) resin. can do.

Meanwhile, one or a plurality of light emitting device packages according to an embodiment of the present invention may be disposed on a circuit board and applied to a light source device. In addition, the light source device may include a display device, a lighting device, a head lamp, and the like according to industrial fields.

As an example of the light source device, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module including a light emitting element that emits light, and a light emitting module disposed in front of the reflector and guiding light emitted from the light emitting module forward. A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying image signals to the display panel, A color filter disposed on the front side may be included. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. In addition, the display device may have a structure in which light emitting elements emitting red, green, and blue light are respectively disposed without including a color filter.

As another example of a light source device, a headlamp includes a light emitting module including a light emitting device package disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, forward, and a light reflected by the reflector. It may include a lens that refracts light forward, and a shade that blocks or reflects a part of the light reflected by the reflector and directed to the lens to achieve a light distribution pattern desired by a designer.

A lighting device, which is another example of a light source device, may include a cover, a light source module, a radiator, a power supply unit, an inner case, and a socket. In addition, the light source device according to an embodiment of the present invention may further include any one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment of the present invention.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified with respect to other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to these combinations and variations should be interpreted as being included in the scope of the embodiments.

Although the above has been described centering on the embodiment, this is only an example and is not intended to limit the embodiment, and those skilled in the art to which the embodiment belongs may find various things not exemplified above to the extent that they do not deviate from the essential characteristics of the present embodiment. It will be appreciated that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

Claims (14)

a body with a cavity;
a first frame and a second frame disposed at the bottom of the cavity and spaced apart from each other by the body;
a light emitting element including a first bonding part facing the upper surface of the first frame and a second bonding part facing the upper surface of the second frame;
a first extension part extending from the first inner surface of the cavity to the upper surface of the first frame disposed at the bottom of the cavity;
a second extension part extending from the second inner surface of the cavity to an upper surface of the second frame disposed at the bottom of the cavity; and
A first resin disposed between the light emitting element and the bottom of the cavity,
The first extension part includes a first spacer disposed around the first bonding part of the light emitting element and overlapping the first bonding part in a horizontal direction,
The second extension part includes a second spacer disposed around the second bonding part of the light emitting element and overlapping the second bonding part in the horizontal direction,
The first spacer is disposed between the first frame and the light emitting element,
The second spacer is disposed between the second frame and the light emitting element,
A second resin is disposed on the first extension and the second extension,
The second resin covers the first spacer and the second spacer,
The thickness of the second resin is thicker than the thickness of the first resin light emitting device package. The method of claim 1, wherein the heights of the first and second spacers are equal to the thicknesses of the first and second extensions,
The first and second extension parts include the same resin material as the body,
The first extension part is disposed around the first bonding part, the second extension part is disposed around the second bonding part,
a first conductive portion between the first bonding portion and the first frame; and
A light emitting device package including a second conductive part between the second bonding part and the second frame. The method of claim 2, wherein the first extension portion includes a first concave portion that becomes narrower in width toward an outer direction of the first bonding portion,
The second extension portion includes a second concave portion gradually narrowing in width toward the outside of the second bonding portion,
A width of the first and second concave portions is smaller than a width of the first and second bonding portions;
A portion of the first and second concave portions is disposed outside the side surface of the light emitting device. The method of claim 1, wherein heights of upper surfaces of the first and second spacers protrude higher than upper surfaces of the first and second extension portions,
The first and second extension parts and the first and second spacers include the same resin material as the body,
The second resin is a light emitting device package that is adhered to the lower surface and the side surface of the light emitting device. The method of claim 1 or 4, wherein the minimum distance between the first and second spacers in the first direction, which is the longitudinal direction of the body, is shorter than the length of the light emitting element, and the maximum distance is greater than the length of the light emitting element,
The first frame includes a first support bent from an upper surface of the first frame to a lower surface of the body,
The second frame includes a second support bent from the upper surface of the second frame to the lower surface of the body,
The first support overlaps the first spacer in the horizontal direction,
The second support portion overlaps the second spacer in the horizontal direction. delete delete delete delete delete delete delete delete delete

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