KR102595927B1 - Light emitting device package, manufacturing method thereof and light source unit - Google Patents

Abstract

A light emitting device package disclosed in an embodiment of the invention includes a body including a plurality of through holes penetrating the upper and lower surfaces and being spaced apart from each other; a light emitting device disposed on the body and including first and second bonding portions respectively disposed on the plurality of through holes; a first resin disposed between the light emitting device and the upper surface of the body; a metal portion disposed on an inner surface of each of the plurality of through holes; The first resin may include an extension protrusion extending from an inner surface of at least one of the plurality of through holes, and the metal portion may be arranged to surround the extension protrusion.

Description

Light emitting device package, light emitting device package manufacturing method and light source device {LIGHT EMITTING DEVICE PACKAGE, MANUFACTURING METHOD THEREOF AND LIGHT SOURCE UNIT}

Embodiments of the invention relate to a light emitting device package, a method of manufacturing a light emitting device package, and a light source device having the same.

Embodiments of the invention relate to a semiconductor device package, a method of manufacturing a semiconductor device package, and a light source device having the same.

Semiconductor devices containing compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in a variety of ways, such as light emitting devices, light receiving devices, and various diodes.

In particular, light-emitting devices such as light emitting diodes and laser diodes using group III-V or group II-VI compound semiconductor materials have been developed into red, green, and green colors through the development of thin film growth technology and device materials. It has the advantage of being able to produce light in various wavelength bands, such as blue and ultraviolet rays. In addition, light-emitting devices such as light-emitting diodes or laser diodes using Group 3-5 or Group 2-6 compound semiconductor materials can also be implemented as highly efficient white light sources by using fluorescent materials or combining colors. Compared to existing light sources such as fluorescent lamps and incandescent lamps, these light-emitting devices have the advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness.

In addition, when light-receiving devices such as photodetectors or solar cells are manufactured using group III-V or group II-VI compound semiconductor materials, light in various wavelength ranges can be absorbed through the development of device materials to generate photocurrent. By doing so, light of various wavelengths, from gamma rays to radio wavelengths, can be used. In addition, such light-receiving devices have the advantages of fast response speed, safety, environmental friendliness, and easy control of device materials, so they can be easily used in power control, ultra-high frequency circuits, or communication modules.

Therefore, semiconductor devices can replace the transmission module of optical communication means, the light emitting diode backlight that replaces the cold cathode fluorescence lamp (CCFL) that constitutes the backlight of LCD (Liquid Crystal Display) display devices, and fluorescent or incandescent light bulbs. Applications are expanding to include white light-emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

For example, a light emitting device can be provided as a p-n junction diode that converts electrical energy into light energy using elements from groups 3 to 5 or elements from groups 2 to 6 on the periodic table, and can be provided as a p-n junction diode of a compound semiconductor. By adjusting the composition ratio, various wavelengths can be realized.

For example, nitride semiconductors are receiving great attention in the development of optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light-emitting devices, green light-emitting devices, ultraviolet (UV) light-emitting devices, and red light-emitting devices using nitride semiconductors are commercialized and widely used.

For example, in the case of ultraviolet light-emitting devices, they are light-emitting diodes that generate light distributed in the wavelength range of 200 nm to 400 nm. In the above wavelength range, in the case of short wavelengths, they are used for sterilization and purification, and in the case of long wavelengths, they are used in exposure machines or curing machines, etc. can be used

Ultraviolet rays can be divided into three types in order of longest wavelength: UV-A (315nm~400nm), UV-B (280nm~315nm), and UV-C (200nm~280nm). The UV-A (315nm~400nm) range is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit identification, photocatalyst sterilization, and special lighting (aquarium/agricultural use, etc.), while UV-B (280nm~315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as semiconductor devices capable of providing high output are required, research is being conducted on semiconductor devices that can increase output by applying high power.

Additionally, in semiconductor device packages, research is being conducted on ways to improve the light extraction efficiency of the semiconductor device and improve the light intensity at the package end. Additionally, in semiconductor device packages, research is being conducted on ways to improve the bonding strength between package electrodes and semiconductor devices.

Additionally, in semiconductor device packages, research is being conducted on ways to reduce manufacturing costs and improve manufacturing yield by improving process efficiency and changing structures.

An embodiment of the invention is a semiconductor device package or light emitting device package in which a through hole of a body is disposed in the lower part of a device such as a semiconductor device or a light emitting device and a metal portion is disposed on at least one or both of the surface of the through hole and the bottom of the body. can be provided.

Embodiments of the invention may provide a semiconductor device package or a light emitting device package in which a through hole of the body and a metal portion are disposed in an area overlapping with the device.

Embodiments of the invention may provide a semiconductor device package or a light emitting device package in which metal parts are disposed in a plurality of through holes penetrated between the upper and lower surfaces of the body.

Embodiments of the invention can provide a semiconductor device package or a light-emitting device package in which a first resin is disposed between the body and the device to support and fix the lower part of the device.

Embodiments of the invention can provide a semiconductor device package or light-emitting device package in which a second resin is disposed around the lower circumference of the device to support and fix the lower circumference of the device to the body.

Embodiments of the invention may provide a semiconductor device package or a light emitting device package in which an extension protrusion made of resin extends between the surface of the penetrating portion of the body and the metal portion.

Embodiments of the invention can provide a semiconductor device package or a light-emitting device package in which an impurity with high depositability on a metal portion is added to an extension protrusion made of a resin material disposed on the inner surface of a through hole of a body.

An embodiment of the invention is a semiconductor device package or light-emitting device package in which one or more concave recesses are disposed on the upper part of the body, and a first resin is disposed in the recesses to support and fix the lower part of the light-emitting device. can be provided.

Embodiments of the invention can provide a semiconductor device package or light-emitting device package that can improve light extraction efficiency and electrical characteristics.

Embodiments of the invention can provide a semiconductor device package or a light emitting device package that can improve process efficiency and present a new package structure to reduce manufacturing costs and improve manufacturing yield.

Embodiments of the invention can provide a semiconductor device package or a light-emitting device package that can prevent a re-melting phenomenon from occurring in the bonding area of the semiconductor device package during the process of re-bonding the semiconductor device package to a substrate, etc. there is.

A light emitting device package according to an embodiment of the invention includes a body including a plurality of through holes that penetrate the upper and lower surfaces and are spaced apart from each other; a light emitting device disposed on the body and including first and second bonding portions respectively disposed on the plurality of through holes; a first resin disposed between the light emitting device and the upper surface of the body; a metal portion disposed on an inner surface of each of the plurality of through holes; The first resin may include an extension protrusion extending from an inner surface of at least one of the plurality of through holes, and the metal portion may be arranged to surround the extension protrusion.

According to an embodiment of the invention, the extension protrusion may include a reflective filler.

According to an embodiment of the invention, the extension protrusion overlaps one or both of the first and second bonding parts, and the first resin is a connection part connected to the extension protrusion between the first or second bonding part and the body. may include.

According to an embodiment of the invention, the first resin may be disposed between the first and second bonding parts of the light emitting device.

According to an embodiment of the invention, it includes a second resin disposed around the lower portion of the light emitting device, and the second resin may be connected to the first resin.

According to an embodiment of the invention, a plurality of extension protrusions may be spaced apart from each other on the inner surface of the through hole.

According to an embodiment of the invention, the extension protrusion may be disposed on an upper portion of the through hole and may be disposed to face the first or second bonding portion of the light emitting device.

According to an embodiment of the invention, the sum of the thicknesses of the metal parts disposed on opposing inner surfaces of each through hole may be smaller than the width of the upper surface of the through hole.

According to an embodiment of the invention, the metal part disposed in each of the plurality of through holes may include a plurality of extension parts extending to the lower surface of the body.

According to an embodiment of the invention, the body includes a reflective filler, the first resin includes the same reflective filler as the body, and the reflective filler may include TiO ₂ or TiO ₂ and BN.

According to an embodiment of the invention, a concave portion exposed to the lower surface of the body and concave may be included between the plurality of extension parts extending from the plurality of through holes to the lower surface of the body.

According to an embodiment of the invention, it may include a cavity in which the light emitting element is disposed on the body, and a molding part having a phosphor inside the cavity or on the body.

A method of manufacturing a light emitting device package according to an embodiment of the invention includes forming a body having a plurality of through holes penetrating the upper and lower surfaces; forming a first resin on the body; disposing a light emitting device on the first resin and aligning first and second bonding portions of the light emitting device with each of the plurality of through holes; curing the first resin on which the light emitting device is disposed; Depositing a metal portion on the lower surface of the body, the inner surface of the plurality of through holes, and the lower surface of the first and second bonding parts exposed to the upper surface of the plurality of through holes; and removing and separating the metal portion from the lower surface of the body disposed between the plurality of through holes, wherein the metal portion is disposed in each of the plurality of through holes to form the first bonding portion and the second bonding portion. The part and the metal part on the through hole can be placed face to face.

According to an embodiment of the invention, the first resin extends to the inner surface of at least one of the plurality of through holes to form an extension protrusion, and the metal part may be formed in the through hole to surround the extension protrusion.

According to an embodiment of the invention, the metal portion removal process is performed through a laser scribing process, and the lower surface area of the body from which the metal portion is removed may be formed as a concave concave portion.

According to an embodiment of the invention, the method may include forming a molding portion having a phosphor on the body.

A light source device according to an embodiment of the invention includes a circuit board having first and second pads on an upper portion; and one or more light-emitting device packages are disposed on the circuit board, and include first and second conductive portions disposed in first and second through-holes of the light-emitting device package, wherein the first conductive portion is connected to the first pad. and a first bonding part of the light emitting device and a first metal part in the first through hole, and the second conductive part is connected to the second pad and a second bonding part of the light emitting device package and a first metal part in the second through hole. It may be connected to the second metal part.

According to an embodiment of the invention, a metal part is provided in a through hole of a body facing the bonding parts of a semiconductor device or a light emitting device, thereby improving adhesion to the bonding parts and electrical conductivity.

According to an embodiment of the invention, the electrical reliability of the conductive portion in the through hole can be improved by bonding the metal portion disposed on the through hole and the bottom of the body to the conductive portion.

According to an embodiment of the invention, the adhesive force and electrical conductivity of the bonding part of the flip chip can be improved by connecting the conductive part and the bonding part of the device through a through hole in the body.

According to an embodiment of the invention, the bonding part and the conductive part of the device can be connected to the through hole of the body, thereby improving the adhesion and electrical conductivity of the flip chip.

According to an embodiment of the invention, the adhesion and support of the device can be improved by disposing the first resin between the lower part of the light emitting device and the body.

According to an embodiment of the invention, the adhesion and support of the device can be improved by disposing a recess on the upper part of the body and the lower part of the device and disposing the first resin on the lower part of the device.

According to an embodiment of the invention, the adhesion and support force around the lower circumference of the device can be improved by disposing the second resin around the lower circumference of the body.

According to an embodiment of the invention, the inner surface of the through hole can be provided to be rough by disposing a resin extension protrusion between the inner surface of the through hole and the metal portion.

According to an embodiment of the invention, an extension or protrusion of a resin having impurities with high adhesion to the metal part is disposed between the inner surface of the through hole and the metal part, thereby providing a rough inner surface of the through hole.

According to an embodiment of the invention, there is an advantage of improving light extraction efficiency, electrical characteristics, and reliability.

According to an embodiment of the invention, there is an advantage in reducing manufacturing costs and improving manufacturing yield by improving process efficiency and suggesting a new package structure.

According to an embodiment of the invention, there is an advantage in preventing a re-melting phenomenon from occurring in the bonding area of the semiconductor device package during the process of re-bonding the semiconductor device package to a substrate.

According to embodiments of the invention, the reliability of a semiconductor device package or a light emitting device package, and a light source device having the same can be improved.

1 is a plan view of a light emitting device package according to an embodiment of the invention.
FIG. 2 is a plan view of the light emitting device package of FIG. 1 with the light emitting device removed.
FIG. 3 is a diagram illustrating in detail the extension protrusion on the inner surface of the through hole in FIG. 2.
Figure 4 is a bottom view of the light emitting device package of Figure 1.
FIG. 5 is an example of a cross-sectional view along the AA side of the light emitting device package of FIG. 1.
FIG. 6 is an example of a cross-sectional view on the BB side of the light emitting device package of FIG. 1.
FIG. 7 is an example of a CC side cross-sectional view of the light emitting device package of FIG. 1.
Figure 8 is a first modified example of the light emitting device package of Figure 5.
Figure 9 is an example of a conductive part disposed in a through hole of the body of the light emitting device package of Figure 5.
Figure 10 is a second modified example of the light emitting device package of Figure 5.
Figure 11 is a detailed configuration diagram of the through hole of Figure 10.
Figure 12 is a third modified example of the light emitting device package of Figure 5 or Figure 10.
Figure 13 is an example of a light source device having a light emitting device package according to an embodiment of the invention.
Figure 14 is an example of a light-emitting device applied to a light-emitting device package according to an embodiment of the invention.

The following embodiments will be described with reference to the attached drawings. In the description of the embodiments, each layer (film), region, pattern or structure is “on/over” or “under” the substrate, each layer (film), region, pad or pattern. In the case where it is described as being formed in a layer, “on/over” and “under” include both being formed “directly” or “indirectly through another layer.” do. In addition, the standards for top/up or bottom of each floor are explained based on the drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package according to an embodiment of the invention will be described in detail with reference to the attached drawings. The semiconductor device of the device package may include a light emitting device that emits ultraviolet, infrared, or visible light. Hereinafter, the description will be based on the case where a light-emitting device is applied as an example of a semiconductor device, and the package or light source device to which the light-emitting device is applied may include a non-light-emitting device, such as a Zener diode or a sensing device that monitors wavelength or heat. You can. Hereinafter, the description will be based on the case where a light-emitting device is applied as an example of a semiconductor device, and the light-emitting device package will be described in detail.

<Light emitting device package>

Figure 1 is a plan view of a light emitting device package according to an embodiment of the invention, Figure 2 is a plan view with the light emitting device removed from the light emitting device package of Figure 1, and Figure 3 is a detailed explanation of the extension protrusion on the inner surface of the through hole in Figure 2. It is a drawing, FIG. 4 is a bottom view of the light emitting device package of FIG. 1, FIG. 5 is an example of a cross-sectional view from the A-A side of the light-emitting device package of FIG. 1, and FIG. 6 is an example of a cross-sectional view from the B-B side of the light-emitting device package of FIG. 1. , FIG. 7 is an example of a C-C cross-sectional view of the light emitting device package of FIG. 1.

Referring to FIGS. 1 to 7 , the light emitting device package 100 may include a body 110 and a light emitting device 120.

The body 110 may include a first body 115 and a second body 110A. The second body 110A may be placed on the first body 115. The second body 110A may be disposed around the upper portion of the first body 115. The second body 110A may provide a cavity 102 on the top of the first body 115. As an example, the first body 115 and the second body 110A may be formed integrally with each other. As another example, the first body 115 and the second body 110A may be formed separately and then attached or combined. For this coupling, the first body 115 and the second body 110A may have a coupling structure such as a locking groove or/and a locking protrusion. The first and second bodies 115 and 110A may be integrally formed of a resin material or a reflective resin material.

The first body 115 may be a body part that supports a light emitting device, and the second body 110A may be a reflection part. The first body 115 may be defined as a lower body, and the second body 110A may be defined as an upper body. Additionally, according to an embodiment, the body 110 may not include the second body 110A providing the cavity 102, but may only include the first body 115 providing a flat upper surface. The second body 110A is disposed around the light emitting device 120 and can reflect light emitted from the light emitting device 120 upward. The second body 110A may be disposed at an angle with respect to the upper surface of the first body 115.

The body 110 may include a cavity 102. The cavity 102 may include a bottom surface and a side surface 132 that is inclined from the bottom surface with respect to the top surface of the body 110. The side 132 may include a step structure. According to an embodiment, the body 110 may be provided as a structure having a cavity 102, or may be provided as a structure with a flat upper surface without the cavity 102.

For example, the body 110 may be made of resin or insulating resin. The body 110 is made of polyphthalamide (PPA), polychlorotri phenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy, epoxy molding compound (EMC), and silicone. It may be formed of at least one selected from the group including molding compound (SMC), ceramic, photo sensitive glass (PSG), and sapphire (Al ₂ O ₃ ). The body 110 may be formed of a resin material. The body 110 may contain impurities of metal oxide or ceramic material within the resin. The metal oxide is TiO ₂ , Al ₂ O ₃ Alternatively, it may include a filler made of a high refractive index material such as SiO ₂ . The body 110 may be formed of thermoplastic resin. The body 110 may include a reflective filler or a filler with a high refractive index.

The length of the light emitting device package 100 in the first direction (X) may be equal to or greater than the length in the second direction (Y). In the following description, the first direction may be the X direction, the second direction may be the Y direction orthogonal to the X direction, and the third direction may be the Z direction orthogonal to the X and Y directions. When the light emitting device 120 has a rectangular shape, the first direction may be the direction of the longer side among the sides of the light emitting device 120. For example, the first direction may be the long side direction of the light emitting device 120, and the second direction may be the short side direction. When the light emitting device 120 has a square shape, side lengths in the first direction and the second direction may be the same. In the first direction, both short sides of the light emitting device 120 may be disposed on opposite sides, and in the second direction, both long sides of the light emitting device 120 may be disposed on opposite sides.

The body 110 may include first and second sides S1 and S2 arranged in a first direction, and third and fourth sides S3 and S4 arranged in a second direction. The gap between the first and second sides S1 and S2 may be the length of the third and fourth sides S3 and S4 in the first direction. The gap between the third and fourth sides S3 and S4 may be the length of the first and second sides S1 and S2 in the first direction.

The body 110 may be formed of an insulating resin material. Since this body 110 has a structure in which the metal frame is removed from the top surface or the bottom of the cavity 102, the range of choice of body materials can be wider than that of a structure with a metal frame. Since the body 110 is not injected integrally with a metal frame, such as a lead frame, a metal portion having a thickness smaller than that of the lead frame may be formed. Since the body 110 is not pre-injected with the lead frame, it is easy to change the position of the through hole of the body 110, the shape of the cavity 102, the size of the body 110, or the design of the package size. You can.

Referring to FIG. 5, the thickness t1 of the body 100 may be 100 micrometers or more, for example, in the range of 100 to 800 micrometers. The thickness t1 of the body 100 may be the sum of the thickness t2 of the first body 115 and the thickness of the second body 110A, and the thickness of the second body 110A may be the light emitting device. It may be more than a thickness of (120). The thickness of the second body 110A may be equal to or thicker than the thickness t2 of the first body 115. The upper surface of the second body 110A may be disposed at a position equal to or higher than the upper surface of the light emitting device 120 for distribution of the beam angle of light. In another example, the second body 110A may be removed from the first body 115, and this light emitting device package may have a light beam angle distribution of 130 degrees or more.

One or more light emitting devices 120 may be disposed on the body 110. Here, the light emitting device 120 may be disposed one or more on the body 110 or the first body 115. The plurality of light emitting devices may be arranged in a first direction and/or a second direction on the body 110 or the first body 115. A plurality of light emitting devices on the body 110 or the first body 115 may be disposed in one cavity, thereby improving the luminous intensity within one cavity. Each of the plurality of light emitting devices on the body 110 or the first body 115 may be disposed in each of the cavities disclosed above, and the plurality of cavities may be disposed in the first direction and/or the second direction. The plurality of light emitting devices may be connected in series or in parallel. Hereinafter, for convenience of explanation, an example in which one light emitting element is disposed on a body or a first body will be described.

The body 110 may be provided with through holes TH1 and TH2. The body 110 may have one or more through holes. The through holes TH1 and TH2 may include first and second through holes TH1 and TH2 spaced apart from each other. The first and second through holes TH1 and TH2 may penetrate from the upper surface to the lower surface of the body 110 disposed below the light emitting device 120. The first and second through holes TH1 and TH2 may penetrate from the upper surface to the lower surface of the first body 115. The first and second through holes TH1 and TH2 may penetrate from the bottom of the cavity 102 to the lower surface of the first body 115. The first and second through holes TH1 and TH2 may penetrate from the top to the bottom of the body 110.

According to an embodiment, the width or area of the upper region of the first through hole TH1 may be smaller than or equal to the width or area of the lower region of the first through hole TH1. The width or area of the upper region of the second through hole TH2 may be smaller than or equal to the width or area of the lower region of the second through hole TH2.

The first and second through holes TH1 and TH2 may have an inclined shape whose width gradually decreases from the lower area to the upper area. The inner surfaces of the first and second through holes TH1 and TH2 may include at least one or two of a vertical surface, an inclined surface, and a curved surface. For example, as shown in FIG. 10, the first and second through holes TH1 and TH2 may include inclined surfaces or inner surfaces.

The gap between the first through hole TH1 and the second through hole TH2 in the lower surface area of the first body 115 may be 100 micrometers to 600 micrometers. The gap between the first through hole (TH1) and the second through hole (TH2) in the lower surface area of the first body 115 is the gap between the first through hole (TH1) and the second through hole (TH2) when the light emitting device package 100 is mounted on a circuit board or submount. , may be spaced within the above range to prevent electrical interference. The depth of the first and through holes TH1 and TH2 may be equal to the thickness t2 of the first body 115. The depth of the first and second through holes TH1 and TH2 may be provided at a thickness that can maintain stable strength of the first body 115. The depth of the first and second through holes TH1 and TH2 of the body 110 may be 400 micrometers or less, for example, in the range of 80 to 400 micrometers or 100 to 300 micrometers. Here, the thickness t2 of the first body 115 may be 400 micrometers or less, for example, in the range of 80 to 400 micrometers or 100 to 300 micrometers. The depth of the first and second through holes TH1 and TH2 of the first body 115 may be equal to or thicker than the thickness of the first body 115. The thickness of the first body 115 may be greater than the thickness of the metal parts 111 and 113, that is, the horizontal thickness at the through holes TH1 and TH2. The gap between the upper and lower surfaces of the body 110 disposed below the light emitting device 120 may be larger than the thickness of the metal parts 111 and 113, that is, the horizontal thickness of the through hole. The depth of the first and second through holes TH1 and TH2 may be greater than the thickness of the metal parts 111 and 113.

The first and second through holes TH1 and TH2 may be disposed in an area that overlaps the area of the light emitting device 120 in the vertical direction. The first and second through holes TH1 and TH2 may have a top view shape of at least one of a circular shape, an elliptical shape, a polygonal shape, and an irregular shape having straight lines and curves. The upper lengths of the first and second through holes TH1 and TH2 may be the same in the first and second directions, or may be longer in one direction. The lower lengths of the first and second through holes TH1 and TH2 may be the same in the first and second directions, or may be longer in one direction.

The first through hole TH1 may be disposed one or more than the first bonding portion 121 of the light emitting device 120 . The second through hole TH2 may be disposed one or more than the second bonding portion 122 of the light emitting device 120 . The first and second through holes TH1 and TH2 may have the same upper and lower shapes. As another example, the first and second through holes TH1 and TH2 may have different upper and lower shapes. The first and second through holes TH1 and TH2 may have symmetrical upper and lower shapes. The first and second through holes TH1 and TH2 may have asymmetrical upper and lower shapes. The first and second through holes TH1 and TH2 may have the center of the upper shape and the center of the lower shape arranged on the same vertical straight line or on different vertical straight lines in at least one of the first and second directions. You can. For example, as shown in FIG. 10 , the upper and lower shapes of the first and second through holes TH1 and TH2 may be different from each other, or the upper and lower centers may be disposed at different positions in the first direction. As shown in FIG. 10 , the upper and lower shapes of the first and second through holes TH1 and TH2 may be different from each other, or the upper and lower centers may be disposed at different positions in the second direction.

According to an embodiment of the invention, as shown in FIGS. 5 to 7, the light emitting device 120 may include a first bonding part 121, a second bonding part 122, and a light emitting structure 123. The light emitting device 120 may include a substrate 124. The length of the light emitting device 120 in the first direction may be the same as the length in the second direction, or the length in the first direction may be longer than the length in the second direction.

The light emitting structure 123 may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first bonding part 121 may be electrically connected to the first conductive semiconductor layer. The second bonding part 122 may be electrically connected to the second conductive semiconductor layer.

The substrate 124 is a light-transmitting layer and may be made of an insulating material or a semiconductor material. The substrate 124 may be selected from a group including, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 124 may have a concavo-convex pattern formed on its surface. The substrate 124 may be removed.

According to an embodiment of the invention, the light emitting structure 123 may be provided as a compound semiconductor. For example, the light emitting structure 123 may be provided as a Group 2-6 or Group 3-5 compound semiconductor. As an example, the light emitting structure 123 includes at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). It can be.

The light emitting structure 123 may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first and second conductivity type semiconductor layers may be implemented with at least one of group 3-5 or group 2-6 compound semiconductors. The first and second conductive semiconductor layers are, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It can be formed as For example, the first and second conductive semiconductor layers may include at least one selected from the group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. . The first conductive semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductive semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The active layer may be implemented as a compound semiconductor. For example, the active layer may be implemented with at least one of group 3-5 compound semiconductors or group 2-6 compound semiconductors. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers arranged alternately, In _x Al _y Ga _{1 -x- y} N (0≤x≤1 , 0≤y≤1, 0≤x+y≤1). For example, the active layer is selected from the group including InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, InP/GaAs. It can contain at least one.

A body 110 may be disposed around the light emitting device 120. A second body 110A may be disposed around the light emitting device 120. The light emitting device 120 may be disposed on the body 110. The light emitting device 120 may be disposed on the first body 115. The light emitting device 120 may be disposed within the cavity 102 provided by the body 110. The inner side 132 disposed around the outer periphery of the cavity 102 may be inclined or vertical. For example, the inclined surface may be arranged to be inclined in one or more stages or two or more stages.

The first bonding part 121 and the second bonding part 122 may be arranged to be spaced apart from each other on the lower surface of the light emitting device 120. The first bonding part 121 may be disposed on the body 110 or the first body 115. The second bonding part 122 may be disposed on the body 110 or the first body 115. The first and second bonding parts 121 and 122 may face the body 111 or the first body 115. The first and second bonding parts 121 and 122 may be spaced apart in a first direction. The first and second bonding portions 121 and 122 may be spaced apart in the same direction as the first and second through holes TH1 and TH2.

The first and second bonding parts 121 and 122 may be electrodes or pads. Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding part 121 and the second bonding part 122. And, the light emitted from the light emitting device 120 can be extracted toward the top of the body 110 or the top of the second body 110A.

The first bonding part 121 may be disposed between the light emitting structure 123 and the body 110. The second bonding part 122 may be disposed between the light emitting structure 123 and the body 110. The first bonding part 121 and the second bonding part 122 may include at least one or both of a metallic material and a non-metallic material. The first and second bonding parts 121 and 122 include Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru. , Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO. It can be formed as a single layer or multilayer using one or more materials or alloys selected from the group including .

Since the first and second bonding portions 121 and 122 are disposed at the bottom of the light emitting device 120, the light emitting device 120 may include a reflective structure for reflecting light traveling downward from the light emitting structure 123. For example, a reflective structure may be included between the light emitting structure 123 and the first and second bonding parts 121 and 122. The reflective structure may be formed as a single layer or multiple layers using at least one or both of metallic and non-metallic materials. There may be one or more reflective structures, and at least one reflective structure may include a distributed Bragg Reflector (DBR) structure in which layers of different materials or different refractive indices are alternately stacked.

The light emitting device 120 may include one or more light emitting cells therein. The light emitting cell may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected to each other in series within one light emitting device. Accordingly, the light-emitting device 120 may have one or a plurality of light-emitting cells, and when n light-emitting cells are disposed in one light-emitting device, it can be driven with a driving voltage of n times. For example, when the driving voltage of one light-emitting cell is 3V and two light-emitting cells are disposed in one light-emitting device, each light-emitting device can be driven with a driving voltage of 6V. Alternatively, when the driving voltage of one light-emitting cell is 3V and three light-emitting cells are arranged in one light-emitting device, each light-emitting device can be driven with a driving voltage of 9V. The number of light-emitting cells disposed in the light-emitting device 120 may be 1 or 2 to 5.

In the light emitting device package according to an embodiment of the invention, a predetermined gap may be disposed in the area between the body 110 and the lower surface of the light emitting device 120. The lower surface of the light emitting device 120 may be the lower surface of an area overlapping with the light emitting structure 123. The height of the gap may be equal to or greater than the thickness of the first and second bonding parts 121 and 122. The first resin 160 may be disposed in the gap. The first resin 160 may be disposed in an area between the first and second bonding parts 121 and 122 and an area between the lower surface of the light emitting device 120 and the upper surface of the body 110. The first resin 160 may be disposed in an area between the first and second bonding parts 121 and 122 and an area between the lower surface of the light emitting device 120 and the upper surface or bottom of the cavity of the first body 115. You can. The first resin 160 can attach the light emitting device 120 to the body 110. The first resin 160 may include a resin material such as silicone or epoxy. The first resin 160 may include metal oxide or reflective filler therein. The first resin 160 is dispensed on the lower part of the light-emitting device 120 before the conductive portions 221 and 223 shown in FIG. 9 or 13 are formed, thereby attaching the light-emitting device 120 to the first body ( 115) It can be attached and fixed to the top. Accordingly, the first resin 160 can prevent the light emitting device 120 from moving or tilting. Additionally, the first resin 160 can fix the light emitting device 120 to the first body 115 even if the conductive portions 221 and 223 are remelted.

The first resin 160 may provide a light diffusion function between the light emitting device 120 and the body 110 when light is emitted from the lower surface of the light emitting device 120. When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the first resin 160 provides a light diffusion function, thereby improving light extraction efficiency of the light emitting device package. Additionally, the first resin 160 may reflect light emitted from the light emitting device 120. For example, when the first resin 160 includes a reflective function, the first resin 160 may include ZnS, BN, CaF ₂ , ZrO ₂ , ZnO, Sb ₂ O ₃ , TiO ₂ , SiO ₂ , It may include at least one or two or more reflective fillers of Al ₂ O ₃ . The first resin 160 may include a reflective filler made of ceramic material. The first resin 160 may include different materials among the fillers, but is not limited thereto.

The first resin 160 may be in contact with the lower surface of the light emitting device 120 and the body 110. The first resin 160 may be in contact with the first and second bonding parts 121 and 122. The first resin 160 adheres the light-emitting device 120 to the body 110, can increase the support force of the light-emitting device 120, and prevent tilt of the light-emitting device 120. You can. The first resin 160 can provide stable fixing force between the light emitting device 120 and the body 110. The first resin 160 is in contact with the lower surface of the light emitting device 120, and when the conductive parts 221 and 223 bonded to the light emitting device 120 on the circuit board 201 as shown in FIG. 13 are remelted. , it is possible to prevent the light emitting device 120 from moving and support the light emitting device 120.

According to the light emitting device package 100 according to the invention, the first and second through holes TH1 and TH2 may be provided through the upper and lower surfaces of the body 110 in the Z direction. The first and second through holes TH1 and TH2 may overlap the light emitting device 120 in the vertical direction (Z). The first through hole TH1 may be disposed below the first bonding part 121 of the light emitting device 120. The first through hole TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 in a vertical direction. The first through hole TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 in the Z direction from the upper surface to the lower surface of the body 110. By exposing the first bonding portion 121 through the first through hole TH1, an electrical path and It can be provided as a heat dissipation path.

The second through hole TH2 may be disposed below the second bonding part 122 of the light emitting device 120. The second through hole TH2 may overlap the light emitting device 120 in a vertical direction. The second through hole TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 in a vertical direction. The second through hole TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 in a direction from the upper surface to the lower surface of the body 110. By exposing the second bonding portion 122 through the second through hole TH2, an electrical path and It can be provided as a heat dissipation path.

The first through hole TH1 and the second through hole TH2 may be arranged to be spaced apart from each other in a first direction. The first through hole TH1 and the second through hole TH2 may be arranged to be spaced apart from each other under the lower surface of the light emitting device 120. The first through hole TH1 and the second through hole TH2 may overlap the light emitting device 120 in the Z-axis direction.

Referring to FIGS. 1 to 4 , the width of the first through hole TH1 in the X direction may be equal to the length of the Y direction, or the length in the Y direction may be greater than the width in the X direction. The width of the second through hole TH2 in the X direction and the length in the Y direction may be equal to each other, or the length in the Y direction may be greater than the width in the X direction. The width and length of the first and second through holes TH1 and TH2 in the first and second directions may vary depending on the sizes of the first and second bonding portions 121 and 122. The width of the upper area of the first through hole TH1 in the X direction may be smaller than or equal to the width of the first bonding portion 121. Additionally, the width of the upper area of the second through hole TH2 in the X direction may be smaller than or equal to the width of the second bonding portion 122. The widths of the first and second through holes TH1 and TH2 in the X direction at the top may be the same or different from each other. The width of the first and second bonding portions 121 and 122 in the X direction may be the same or different from each other. The length of the upper region of the first through hole TH1 in the Y direction may be smaller than or equal to the length of the first bonding portion 121. Additionally, the length of the upper region of the second through hole TH2 in the Y direction may be smaller than or equal to the length of the second bonding portion 122. The first and second through holes TH1 and TH2 may have lengths in the Y direction at the top that are the same or different from each other. The lengths of the first and second bonding parts 121 and 122 in the Y direction may be the same or different from each other. For example, the bottom surface area of the first bonding part 121 may be larger than the top surface area of the first through hole TH1. The bottom surface area of the second bonding portion 122 may be larger than the top surface area of the second through hole TH2. The first and second through holes TH1 and TH2 may have symmetrical upper and lower shapes or may be non-symmetrical. The first and second through holes (TH1, TH2) have a width in the same direction as the direction (X) in which the two bonding portions (121, 122) of the light emitting device (110) overlap and a direction in which the two bonding portions (121, 122) do not overlap. It may be smaller than the length of (Y).

The center of the upper surface and the center of the lower surface of the first through hole TH1 may be placed at the same center or may be arranged to be offset from each other. The center of the upper surface and the center of the lower surface of the second through hole TH2 may be placed at the same center or may be arranged to be offset from each other. In the structure shown in FIG. 1, the centers of the upper and lower surfaces of the first and second through holes TH1 and TH2 may be the same. In the structure shown in FIG. 10, the centers of the upper and lower surfaces of the first and second through holes TH1 and TH2 may be different from each other. Here, when the centers of the upper and lower surfaces of the first and second through holes (TH1, TH2) are arranged to be offset from each other, the straight line distance between the centers of the upper surfaces of the two through holes (TH1, TH2) may be smaller than the straight line distance between the centers of the lower surfaces. there is.

Embodiments of the invention may include a second resin 162 on the body 110 or the first body 115. The second resin 162 may be disposed at the bottom of the cavity 102. The second resin 162 may be disposed around the lower portion of the light emitting device 120. The inner portion of the second resin 162 may overlap in a vertical direction around the lower surface of the light emitting device 120, and the outer portion may be disposed outside the side surface of the light emitting device 120. The second resin 162 may not be formed.

The second resin 162 may be adhered to the lower surface of each corner of the light emitting device 120, or may be adhered to the entire circumference of the lower surface. The second resin 162 may be adhered to the side of the light emitting device 120. The second resin 162 may be disposed at at least one corner or more than one corner of the light emitting device 120, adhere to the lower surface of the light emitting device 120, and support the light emitting device 120. . The second resin 162 may be in contact with a bonding portion adjacent to a corner of the light emitting device 120. This second resin 162 can prevent the light emitting device 120 from rotating or tilting.

The second resin 162 may be in contact with or connected to the first resin 160. The second resin 162 may include a resin material such as silicone or epoxy. The second resin 162 may include metal oxide or reflective filler therein. For example, the second resin 162 includes at least one or two of the following reflective fillers: ZnS, BN, CaF ₂ , ZrO ₂ , ZnO, Sb ₂ O ₃ , TiO ₂ , SiO ₂ , and Al ₂ O ₃ can do. The second resin 162 may include a reflective filler made of ceramic material. The second resin 162 may contain different materials from among the fillers. The second resin 162 can attach and fix the light emitting device 120 on the body 110. Accordingly, the first and second resins 160 and 162 can prevent the light emitting device 120 from moving or tilting. The second resin 162 can fix the light emitting device 120 to the body 110 even if the conductive portions 221 and 223 are remelted. The first and second resins 160 and 162 may include the same filler. The first and second resins 160 and 162 may be made of a resin material different from that of the body 110, or may be made of a material having a reflectance different from that of the body 110. When the first and second resins 160 and 162 have heterogeneous fillers, the first type is a material with a high refractive index and high hydrophilicity and may include a metal oxide such as TiO ₂ , and the second type has thermal stability and heat resistance. It may include a nitride-based material, such as BN, which is highly conductive and has a generally high electrical resistance. The first and second resins 160 and 162 may include the same type of reflective filler as the body 110.

The second resin 162 may be in contact with the side of the cavity 102 or may be spaced apart from the side of the cavity 102. Since the body 110 is made of resin, it is not necessary to form the second resin 162 to the bottom of the cavity adjacent to the cavity side, and if the second resin 162 spreads onto the cavity side, it will cause problems with optical reliability. You can.

One or more recesses may be disposed on the body 110 or the first body 115 where the first and second resins 160 and 162 are disposed. Parts of the first and second resins 160 and 162 may be bonded to these recesses.

A light emitting device package according to an embodiment of the invention may include metal parts 111 and 113. The metal parts 111 and 113 may include first and second metal parts 111 and 113 spaced apart from each other. The first metal part 111 and the second metal part 113 may be physically separated. The first metal part 111 and the second metal part 113 may be arranged not to overlap in the vertical or Z direction. Here, when there are a plurality of cavities, any one of the first and second metal parts may be extended and connected to the through holes in the different cavities.

The first metal portion 111 may be disposed on at least one or both of the surface of the first through hole TH1 and the bottom of the body 110. The second metal portion 113 may be disposed on at least one or both of the surface of the second through hole TH2 and the bottom of the body 110. The first metal portion 111 may be disposed on the entire surface of the first through hole TH1. The second metal portion 113 may be disposed on the entire surface of the second through hole TH2. The first metal portion 111 may be exposed on the upper surface of the first through hole TH1. The second metal portion 113 may be exposed on the upper surface of the second through hole TH2. The upper surface of the first metal portion 111 may be disposed on the same plane as the upper surface of the body 110 disposed below the light emitting device 120 on the upper surface of the first through hole TH1. The upper surface of the second metal portion 113 may be disposed on the same plane as the upper surface of the body 110 disposed below the light emitting device 120 on the upper surface of the second through hole TH2. The first and second metal parts 111 and 113 may be disposed around the first and second through holes TH1 and TH2. The inner holes of the first and second metal parts 111 and 113 may be the center holes or inner holes of the first and second through holes TH1 and TH2 penetrating in the vertical direction.

The thickness of the first metal part 111 may be less than 1/2 of the upper width of the first through hole TH1 or the smaller of the widths in the first and second directions, and in this case, the first metal part 111 The interior of 111 may be provided with a structure in which a hole is disposed at the center of the first through hole TH1. The thickness of the second metal portion 113 may be less than 1/2 of the upper width of the second through hole TH2 or the smaller of the widths in the first and second directions. In this case, the second metal portion 113 The interior of 113 may be provided with a structure in which a hole is disposed at the center of the second through hole TH2. The total thickness of the first metal part 111 and the second metal part 113 may be smaller than the upper width of the first or second through hole TH1 in the first and second directions. In this case, the first and second metal parts 111 and 113 have the same thickness. As another example, the sum of the thicknesses of the metal parts 111 and 113 disposed on the opposing inner surfaces (Sa and Sb in FIG. 10) of each of the through holes TH1 and TH2 is greater than the upper surface width of the through holes TH1 and TH2. It can be small. Accordingly, even if the metal parts 111 and 113 are formed in the through holes TH1 and TH2, the problem of the upper hole being open or the upper width becoming too narrow can be prevented.

The first metal part 111 and the second metal part 113 may be made of metal. The first and second metal parts 111 and 113 are, for example, copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), It can be selected from tin (Sn) and silver (Ag), and can be formed as a single layer or multilayer. The first metal portion 111 and the second metal portion 113 may be multilayered and may include a first layer in contact with the body 110 and a second layer below the first layer. The first layer may include at least one of Ti, Cr, Ta, and Pt, and the second layer may include at least one of Au, Ag, and Cu.

The thickness t3 of the first and second metal parts 111 and 113 may be smaller than the thickness t2 between the upper and lower surfaces of the body 110 disposed below the light emitting device 120. The t3 may be 1/30 or less of t2, for example, 1/30 to 1/100 or less. The ratio of t3:t2 may range from 1:30 to 1:100. This can be provided with a thin thickness by forming the metal parts 111 and 113 on the surface of the body 110 through a deposition process or a plating process. In the light emitting device package according to an embodiment of the invention, the lead frame and the body are not injected as one piece, so when combining the lead frame disposed below the light emitting device and the body, problems caused by the difference in thermal expansion coefficient between the two materials can be solved. In addition, by performing a deposition process or a plating process using metal on the surfaces of the through holes TH1 and TH2 previously provided in the body 110, the thickness t3 of the metal parts 111 and 113 is equal to the thickness t3 of the through holes TH1 and TH2. ) may be less than 1/3 of the upper width in the first direction. That is, when the thickness (t3) of the metal parts (111, 113) is more than 1/3 of the upper width of the through holes (TH1, TH2), it is difficult to secure the upper width of the through holes (TH1, TH2), thereby conducting conduction with the bonding portion. The negative contact area may be reduced.

The thickness t3 of the first and second metal parts 111 and 113 may be 5 micrometers or less, for example, in the range of 2 to 5 micrometers. If the thickness (t3) of the metal parts 111 and 113 is greater than the above range, the improvement in thermal conductivity or electrical conduction characteristics is minimal, and if it is smaller than the above range, heat dissipation efficiency or electrical conduction characteristics may be reduced. The first and second metal parts 111 and 113 may be formed on the surface of the body 110 through a deposition process and/or a plating process.

As another example, the first metal part 111 may be disposed on a portion of the surface of the first through hole TH1. The first metal portion 111 may be disposed on an area of the surface of the first through hole TH1 that is closer to the first side S1 than the second side S2. The second metal portion 113 may be disposed on a portion of the surface of the second through hole TH2. The second metal portion 113 may be disposed on an area of the surface of the second through hole TH2 that is closer to the second side S2 than to the first side S1. These metal parts 111 and 113 are disposed on the outer surface of each through hole TH1 and TH2, and can increase the interference distance between them.

The first metal part 111 may include a first extension part 111B extending to the lower surface of the body 110. The first extension portion 111B may extend from the first metal portion 111 to the lower surface of the body 110. The first extension portion 111B may extend along the lower surface of the body 110 from the first metal portion 111 disposed in the first through hole TH1. The lower surface area of the first extension 111B may be less than 1/2 of the lower surface area of the body 110, for example, 1/2 to 1/5. The first metal portion 111 and the first extension portion 111B may be formed with the same stacked structure.

The second metal portion 113 may include a second extension portion 113B extending to the lower surface of the body 110. The second extension portion 113B may extend from the second metal portion 113 to the lower surface of the body 110. The second extension portion 113B may extend along the lower surface of the body 110 from the second metal portion 113 disposed in the second through hole TH2. The lower surface area of the second extension 113B may be less than 1/2 of the lower surface area of the body 110, for example, 1/2 to 1/5. The second metal portion 113 and the second extension portion 113B may be formed with the same stacked structure.

As another example, the second extension portion 113B is located on the lower surface of the body between the second through hole TH2 and the second side S2 of the body 110 with respect to the second through hole TH2. It may be placed partially or entirely. As another example, a portion of the second extension portion 113B may extend on the second side S2 of the body 110.

As shown in FIG. 4, the first extension portion 111B is located on the lower surface of the body between the first through hole TH1 and the first side S1 of the body 110 with respect to the first through hole TH1. It may be placed in part or all of . As another example, a portion of the first extension portion 111B may extend on the first side S1 of the body 110. The second extension portion 113B is disposed on a portion or the entire lower surface between the second through hole TH2 and the second side S2 of the body 110 with respect to the second through hole TH2. It can be. A portion of the second extension portion 113B may be disposed on the second side S2 of the body 110.

Referring to FIGS. 4 to 6 , the first extension portion 111B may be disposed on the same vertical plane as at least one side or two or more of the side surfaces of the body 110. The second extension portion 113B may be disposed on the same vertical plane as at least one or two or more of the side surfaces of the body 110. The first extension 111B may be exposed to lower portions of the first side S1, third and fourth sides S3 and S4 of the body 110. The second extension portion 113B may be exposed to lower portions of the second side S1, third and fourth sides S3 and S4 of the body 110. The first extension 111B may be disposed on the same vertical plane as at least three sides of the body 110, such as the first side S1 and the third and fourth sides S3 and S4. The second extension portion 113B may be disposed on the same vertical plane as at least three sides of the body 110, such as the second side S1 and the third and fourth sides S3 and S4.

The inner portion of the first extension portion 111B may extend from the first through hole TH1 toward the second through hole TH2 or toward the second side S2. The inner portion of the second extension portion 113B may extend in the direction of the first through hole TH1 or the first side S1 with respect to the second through hole TH2. The lower surface of the body 110, that is, the lower surface of the first body 115, may be exposed between the first and second extension parts 111B and 113B. The lower surface of the body 110 disposed between the first and second metal parts 111 and 113 may have a concave concave portion R5. The concave portion R5 is concave from the bottom to the top of the body 110 and may include a curved or angled surface. The surface of the concave portion R5 may include a rough surface. The concave portion R5 is an area where the first and second extension portions 111B and 113B are removed, and can electrically separate the first and second metal portions 111 and 113. The length of the concave portion R5 in the second direction (Y) may be the same as the length of the first and second extension portions 111B and 113B. The length of the concave portion R5 in the second direction (Y) may be equal to the length of the lower surface of the body 110 in the second direction. This concave portion R5 may be an area where a metal portion is formed through the lower part of the body and then a portion of the metal portion is removed through a laser scribing process to separate the metal portion into two metal portions. The depth of the concave portion R5 may be 1 micrometer or less, for example, in the range of 0.01 to 1 micrometer. The depth of the concave portion R5 may be less than or equal to the thickness of the metal portions 111 and 113. If the depth of the concave portion R5 is greater than the above range, the rigidity between the first and second through holes TH1 and TH2 may be reduced.

2 and 4, the length of the first and second metal parts 111 and 113 in the second direction may be smaller than the length of the first and second extension parts 111B and 113B in the second direction. Accordingly, the heat generated from the first and second metal parts 111 and 113 may be diffused and dissipated through the first and second extension parts 111B and 113B.

The surface areas of the first and second metal parts 111 and 113 disposed in the first and second through holes TH1 and TH2 may be smaller than the surface areas of the first and second through holes TH1 and TH2. The areas of the first and second metal parts 111 and 113 disposed in the first and second through holes TH1 and TH2 are larger than the areas of the first and second extension parts 111B and 113B. It can be small.

The height of the first and second metal parts 111 and 113 disposed in the first and second through holes TH1 and TH2 is greater than the height of the first and second through holes TH1 and TH2, and the It may be greater than the thickness of the body 115. The height of the first and second metal parts 111 and 113 includes the thickness of the first and second extension parts, and the height of the first and second metal parts 111 and 113 includes the first and second through holes ( It may protrude further downward than the lower surface of TH1, TH2). The tops of the first and second metal parts 111 and 113 may be disposed at a level equal to or lower than the top surfaces of the first and second through holes TH1 and TH2. As another example, upper portions of the first and second metal parts 111 and 113 may extend to the upper surface of the first body 115 through the first and second through holes TH1 and TH2.

The first and second metal parts 111 and 113 are disposed in the lower area of the light emitting device 120 and may not protrude outside the side of the light emitting device 120. Since the material of the body 110 has higher reflection characteristics than the material of the metal parts 111 and 113, light loss or reflection characteristics may be reduced when the metal parts are exposed.

Referring to FIGS. 1 to 5 , in an embodiment of the present invention, extension protrusions P1 and P2 may be disposed on the surface or inner surface of at least one or both of the first and second through holes TH1 and TH2. The surface or inner surface of the through holes TH1 and TH2 may be a surface formed by the first body 115 or the body 110. The extension protrusions P1 and P2 may extend from at least one or both of the first and second resins 1601 and 162. The extension protrusions P1 and P2 may protrude from the surface or inner surface of the first through hole TH1 and/or the second through hole TH2 toward the center of the through hole TH1 and TH2. The extension protrusions (P1, P2) may be disposed closer to the top than the bottom of the first through hole (TH1) and/or the second through hole (TH2). The extension protrusions (P1, P2) may be disposed between each of the through holes (TH1, TH2) and the metal parts (111, 113) disposed in each of the through holes (TH1, TH2). The extension protrusions (P1, P2) may be exposed on the upper surfaces of the first through hole (TH1) and/or the second through hole (TH2). For example, the extension protrusions (P1, P2) are a first extension protrusion (P1) disposed on the inner surface of the first through hole (TH1), and a second extension disposed on the inner surface of the second through hole (TH2). It may include protrusions (P2). The extension protrusions (P1, P2) may provide a rough or irregular inner surface or surface of the through holes (TH1, TH2).

3 and 4, the first extension protrusion P1 may extend from at least one or both of the first and second resins 160 and 162. A first connection part (Pa) may be connected between the first extension protrusion (P1) and the first or second resin (160, 162). The first connection part Pa may be disposed in an area that overlaps the first bonding part 121 of the light emitting device 120 in the vertical direction. The first bonding part 121 faces the bottom of the cavity or the upper surface of the first body 115, and may face the first connection part Pa. The first connection part Pa may be in contact with the first bonding part 121.

The second extension protrusion P2 may extend from at least one or both of the first and second resins 160 and 162. A second connection portion (Pb) may be connected between the second extension protrusion (P2) and the first or second resin (160, 162). The second connection part Pb may be disposed in an area that overlaps the second bonding part 122 of the light emitting device 120 in the vertical direction. The second bonding part 122 faces the bottom of the cavity or the upper surface of the first body 115, and may face the second connection part Pb. The second connection part may be in contact with the second bonding part 122.

The connecting portions (Pa, Pb) and extension protrusions (P1, P2) may be formed before the first and second metal portions 111 and 113 are deposited. The connecting portions (Pa, Pb) and extension protrusions (P1, P2) adhere the light-emitting device 120 to the first resin 160, and apply a second resin 162 around the lower portion of the light-emitting device 120. By dispensing, the light emitting device 120 is fixed with the first and second resins 160 and 162. At this time, the first and second bonding parts 121 and 122 of the light emitting device 120 are not in close contact with the entire upper surface of the first body 115, so the first and second bonding parts 121 and 122 and the first body 115 are not in close contact with the entire upper surface of the first body 115. The first and/or second connection parts (Pa, Pb) may extend through the gap between (115). In addition, since the light emitting device 120 is attached by pressing in the direction of the first body, the first and second resins 160 and 162, etc., which were initially compressed in a liquid form, can spread. Extension protrusions P1 and P2, which are ends of the extended connection parts Pa and Pb, may be formed in the through holes TH1 and TH2. The vertical thickness of the connecting portions (Pa, Pb) may be thinner than the vertical thickness of the first and second resins 160 and 162. If the thickness of the connecting portions (Pa, Pb) is thick, bonding between the bonding portions 121 and 122 and the metal portions 111 and 113 may be difficult, and a problem may occur in which the conductive portion, which will be described later, penetrates through the gap.

The first extension protrusion (P1) may be disposed one or more on the inner surface of the first through hole (TH1). The plurality of first extension protrusions (P1) may be spaced apart from each other or may be arranged adjacent to each other. The plurality of first extension protrusions (P1) may be arranged along the inner surface of the first through hole (TH1). The first extension protrusion (P1) may protrude toward the center of the first through hole (TH1). The first extension protrusion (P1) may be disposed between the inner surface of the first through hole (TH1) and the first metal portion. The first extension protrusion (P1) may be disposed between the upper inner surface of the first through hole (TH1) and the first metal portion (111). The thickness or width of the first extension protrusion (P1) may be smaller than the upper width of the first through hole (TH1). The thickness or width of the first extension protrusion (P1) may be equal to or smaller than the thickness of the first metal portion. The thickness or width of the first extension protrusion (P1) may be 0.01 micrometer or more, for example, in the range of 0.01 to 2 micrometer.

The second extension protrusion (P2) may be disposed one or more on the inner surface of the second through hole (TH1). The plurality of second extension protrusions (P2) may be spaced apart from each other or may be arranged adjacent to each other. The plurality of second extension protrusions (P2) may be arranged along the inner surface of the second through hole (TH2). The second extension protrusion P2 may protrude toward the center of the second through hole TH1. The second extension protrusion P2 may be disposed between the inner surface of the second through hole TH2 and the second metal portion 113. The second extension protrusion P2 may be disposed between the upper inner surface of the second through hole TH2 and the second metal portion 113. The thickness or width of the second extension protrusion (P2) may be smaller than the upper width of the second through hole. The thickness or width of the second extension protrusion (P2) may be equal to or smaller than the thickness of the second metal portion 113. The thickness or width of the second extension protrusion (P2) may be 0.01 micrometer or more, for example, in the range of 0.01 to 2 micrometer.

When the thickness or width of the first extension protrusion (P1) and the second extension protrusion (P2) is greater than the above range, the first through hole (TH1) and the second through hole (TH2) are narrowed to form the metal portions (111, 113). Contact efficiency may decrease.

The area where the extension protrusions (P1, P2) are disposed among the first through hole (TH1) and/or the second through hole (TH2) includes protrusions (P3, P4) that protrude convexly from the metal portions (111, 113). can do. Here, the protrusions P3 and P4 may be disposed on the extension protrusions P1 and P2 disposed in at least one or both of the first through hole TH1 and the second through hole TH2. For example, the protrusions (P3, P4) are the first protrusion (P3) of the first metal part (111) on the first extension protrusion (P1), and the second metal part (113) on the second extension protrusion (P2). ) of the second protrusion (P4) may be disposed. The first protrusion P3 may be a portion of the first metal portion 111 disposed in the first through hole TH1 and protrude from the first extension protrusion P1 toward the center of the hole. The second protrusion P4 may be a portion of the second metal portion 113 disposed in the second through hole TH2 and protrude from the second extension protrusion P2 toward the center of the hole.

The first metal portion 111 may surround one or a plurality of first extension protrusions (P1). The first protrusion (P3) may surround one or a plurality of first extension protrusions (P1). The second metal portion 113 may surround one or a plurality of second extension protrusions (P2). The second protrusion (P4) may surround one or a plurality of second extension protrusions (P2). Since these first and second metal parts 111 and 112 surround the extended protrusions P1 and P2 made of resin, it is possible to prevent a decrease in electrical conductivity and thermal conductivity within the through hole.

The extension protrusions (P1, P2) or the connecting portions (Pa, Pb) may include reflective fillers. The reflective filler may include TiO ₂ for metal (eg, Cr) deposition, or may include TiO ₂ and BN for deposition and thermal conductivity. The extension protrusions (P1, P2) may have irregular thickness and may be arranged to face each of the bonding portions (111, 112). Since the tops of the metal parts 111 and 113 are exposed on the upper surfaces of the through holes TH1 and TH2, the bonding parts 111 and 112 can face the metal parts 111 and 113.

The first connection part Pa and the first extension protrusion P1 may overlap the first bonding part 111 in a vertical direction. The second connection part Pb and the second extension protrusion P2 may overlap the second bonding part 113 in the vertical direction. The top surface area of the first connection part Pa may be 50% or less of the bottom surface area of the first bonding part 111. The upper surface area of the second connection part Pb may be 50% or less of the lower surface area of the second bonding part 113. If the upper surface area of the connection parts (Pa, Pb) exceeds 50% of the lower surface area of the bonding parts (111, 113), thermal conductivity and electrical conductivity in each of the bonding parts (111, 113) may be reduced.

An embodiment of the invention may include metal parts 111 and 113 covering the extension protrusions P1 and P2 in at least one or both of the through holes TH1 and TH2 in the body 110. At this time, the metal parts 111 and 113 may include protrusions P3 and P4 protruding from the surface. The protrusions P3 and P4 may protrude toward the center of the hole. These protrusions (P3, P4) may have an increased coupling force with the conductive parts (221, 223) of FIGS. 9 and 13 at the top of the through holes (TH1, TH2).

Here, the first and second extension protrusions (P1, P2) are made of a resin material with a reflective filler or metal oxide added, so there may be difficulties in depositing or plating the metal parts 111 and 113. In an embodiment of the invention, fillers that are easy to deposit on the metal portions 111 and 113, such as TiO ₂ or TiO ₂ and BN, can be included in the first and second resins 160 and 162, which are made of the extended protrusions (P1 and P2). there is. The TiO ₂ has a higher deposition efficiency on the metal part than other fillers, and the BN can improve heat dissipation characteristics by bonding to the metal part. The content of the reflective filler in the first and second resins 160 and 162 may be 3 wt% or more, for example, in the range of 3 to 10 wt%. If it is in the above range, reflection efficiency and deposition efficiency with the metal portion can be improved. there is.

When connecting the light emitting device 120 with the metal parts 111 and 113 on the through holes TH1 and TH2 of the resin body 110 using a flip chip method, resins 160 and 162 are used to fix the light emitting device 120. It is possible to solve the problem of damage to the deposition surfaces of the metal portions 111 and 113 due to the diffused extension protrusions (P1 and P2).

Meanwhile, the first and second metal parts 111 and 113 may be connected to the first and second bonding parts 121 and 122. The first metal part 111 may be in contact with or connected to the first bonding part 121. The second metal part 113 may be in contact with or connected to the second bonding part 122. A metal or intermetallic compound (IMC) layer may be disposed at the interface between the first and second metal parts 111 and 113 and the first and second bonding parts 121 and 122. The metal or intermetallic compound layer may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , where x is under the conditions of 0<x<1, y=1-x, x>y can be satisfied.

9 and 13, the light emitting device package may include conductive portions 221 and 223 within the first and second through holes TH1 and TH2. The light emitting device package may include conductive portions 221 and 223 in the first and second through holes TH1 and TH2, for example, a conductive paste such as solder paste or silver paste. The conductive parts 221 and 223 may connect the metal parts 111 and 113 and the bonding parts 121 and 122. The conductive parts 221 and 223 may include one material selected from the group including Ag, Au, Pt, Sn, Cu, etc., or an alloy thereof. The conductive parts 221 and 223 may include at least one of Cu _x Sn _y- based, Ag _x Sn _y- based, Au _x Sn _y- based _{, and} SAC-based paste, where x is 0<x<1, y=1- The conditions x, x>y can be satisfied. The conductive paste may include solder paste, silver paste, etc., and may be composed of multiple layers made of different materials or a single layer or a single layer made of alloy.

The conductive parts 221 and 223 may be disposed inside the through holes TH1 and TH2 and may not protrude from the lower portions of the through holes TH1 and TH2. For example, the lower portions of the conductive portions 221 and 223 may be filled with an insulating material to prevent the conductive portions 221 and 223 from leaking downward. When these conductive parts 221 and 223 are disposed in the through holes TH1 and TH2, the metal parts 111 and 113 are connected to a support member such as a circuit board or sub-mount and a conductive paste through the lower extension parts 111B and 113B. It can be joined with .

Referring to FIG. 13, conductive portions 221 and 223 disposed on the circuit board 201 may be disposed in the first and second through holes TH1 and TH2. A first conductive portion 221 may be disposed in the first through hole TH1, and a second conductive portion 223 may be disposed in the second through hole TH2. The first conductive part 221 may contact the surface of the first metal part 111 and the surface of the first through hole TH1. The first conductive part 221 may contact the surface of the first metal part 111 at the first through hole TH1. The second conductive part 223 may contact the surface of the second metal part 113 and the surface of the second through hole TH2. The second conductive part 223 may be in contact with the surface of the second metal part 113 within the second through hole TH2.

The first conductive part 221 may be connected to the first bonding part 121 of the light emitting device 120, the first metal part 111, and the first pad 211 of the circuit board 201. there is. The second conductive part 223 may be connected to the second bonding part 122 of the light emitting device 120, the second metal part 113, and the second pad 213 of the circuit board 201. there is. The first conductive part 221 may overlap the first bonding part 121 of the light emitting device 120 in the vertical direction. The second conductive part 223 may overlap the second bonding part 122 of the light emitting device 120 in the vertical direction. Accordingly, the electrical and thermal paths caused by the first and second conductive parts 221 and 223 can be minimized.

The circuit board 201 may be a printed circuit board (PCB). The circuit board 201 may include at least one of a resin PCB, a metal core PCB (MCPCB), a flexible PCB (FPCB), and a rigid PCB. The circuit board 201 has an insulating layer or protective layer 203 disposed on a base layer made of resin or metal, and pads 211 and 213 exposed from the insulating layer or protective layer 203 are disposed. The pads 211 and 213 may electrically connect one or more light emitting device packages. The insulating layer or protective layer 203 may be made of a solder resist material or a resin material.

Each pad 211 and 213 of the circuit board 201 is, for example, at least one pad selected from the group including Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, and Al. It may contain substances or alloys thereof.

The first pad 211 is electrically connected to the first bonding part 121 through the first conductive part 221, and the second pad 213 is electrically connected to the first conductive part 223. It may be electrically connected to the second bonding portion 122.

Here, looking at the bonding process of the conductive parts 221 and 223, the first and second conductive parts 221 and 223 are made of a liquid material and are located on the first and second pads 211 and 213 of the circuit board 201. After doing so, the light emitting elements 120 aligned on the circuit board 201 are combined. At this time, the first conductive portion 221 disposed on the first pad 211 is injected into the first through hole TH1, and the second conductive portion 223 disposed on the second pad 213 is injected into the first through hole TH1. It can be injected into the second through hole (TH2). The upper and lower surfaces of the first body 115 or body 110 disposed between the first and second through holes TH1 and TH2 are made of a resin material, and the first and second conductive parts 221 and 223 ) can prevent the spread of. Accordingly, the first body 115 disposed between the first and second conductive parts 221 and 223 can prevent the liquid conductive paste from spreading and cause electrical interference between the first and second conductive parts 221 and 223. can be blocked.

The first extension part 111B of the first metal part 111 and the second extension part 113B of the second metal part 113 are connected to the circuit board 201 to conduct heat or to the circuit board ( It may be electrically connected to the pads 211 and 213 of 201). For example, as shown in FIG. 7, the first extension portion 111B of the first metal portion 111 and the second extension portion 113B of the second metal portion 113 are connected to the first and second through holes TH1. The portion adjacent to ,TH2) may face or be in contact with the first and second pads 211 and 213 of the circuit board 201. The first extension portion 111B of the first metal portion 111 and the second extension portion 113B of the second metal portion 113 face or contact the protective layer 203 on the circuit board 201. It can be. The protective layer 203 of the circuit board 201 is made of an insulating material to prevent the conductive parts 221 and 223 from spreading along the first and second extension parts 111B and 113B.

In an embodiment of the invention, the flow or diffusion of the conductive parts 221 and 223 can be prevented by the resin body 110, and the metal parts 111 and 113 are respectively disposed in the through holes TH1 and TH2, so that the conductive parts ( 221,223) can improve the bonding properties. Since the diffusion of the conductive parts 221 and 223 can be suppressed and the conductive parts 221 and 223 have a uniform distribution or shape, problems such as electrical openness or reduced heat transfer efficiency due to non-uniform distribution of the conductive parts 221 and 223 can be prevented. can be prevented. Since the resin is exposed on some surfaces of each of the through holes TH1 and TH2 and the metal parts 111 and 113 are disposed on other surfaces, a void is formed in the through holes TH1 and TH2 where the conductive parts 221 and 223 are disposed. It can suppress the formation or reduce the amount of voids. Alternatively, voids may be included between the conductive parts 221 and 223 and the metal parts 111 and 113 or bonding parts 121 and 122 in the through holes TH1 and TH2.

The conductive parts 221 and 223 may include one material selected from the group including Ag, Au, Pt, Sn, Cu, etc., or an alloy thereof. The materials constituting the bonding portions 121 and 122 or the pads 211 and 213 and the materials of the conductive portions 221 and 222 may be combined and combined by an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , where x satisfies the conditions of 0<x<1, y=1-x, x>y. You can.

The bonding portions 121 and 122 of the light emitting device 120 are formed in the process of forming the conductive portions 221 and 223 with the material constituting the conductive portions 221 and 223 or in the heat treatment process after the conductive portions 221 and 223 are provided. An intermetallic compound (IMC) is formed between the parts 221 and 223 and the bonding parts 121 and 122, between the conductive parts 221 and 223 and the pads 211 and 213, or between the conductive parts 221 and 223 and the metal parts 111 and 113. Layers may be formed. As an example, the conductive portions 221 and 223 may be formed using conductive paste. The conductive paste may include solder paste, silver paste, etc., and may be composed of multiple layers made of different materials or a single layer or a single layer made of alloy. For example, the conductive parts 221 and 223 may include SAC (Sn-Ag-Cu) material.

For example, an alloy layer may be formed by bonding between the material forming the conductive parts 221 and 223 and the metal of the bonding parts 121 and 122, the pads 211 and 213, or the metal parts 111 and 113. Accordingly, the conductive parts 221 and 223 and the bonding parts 121 and 122 or the pads 211 and 213 or the metal parts 111 and 113 can be stably coupled physically and electrically. The conductive parts 221 and 223 and the alloy layer can be stably coupled physically and electrically. The alloy layer may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, etc. The intermetallic compound layer may be formed by combining a first material and a second material. The first material may be provided from the conductive portions 221 and 223, and the second material may be provided from the bonding portions 121 and 122 or pads 211 and 213. Alternatively, it may be provided from the metal parts 111 and 113.

According to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, there is no need for the body 110 to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the body 110 from being damaged or discolored due to exposure to high temperatures. Accordingly, the range of choices for materials constituting the upper body can be expanded. According to an embodiment, the body 115 may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material.

The light emitting device package 100 according to an embodiment of the invention may include a molding part 190 as shown in FIGS. 4 to 7. The molding part 190 may be provided on the light emitting device 120. The molding part 190 may be disposed on the body 110. The molding part 190 may be placed in the cavity 102 provided by the second body 110A.

The molding part 190 may be formed as a single layer or multiple layers on the first body 115. The single-layer or multi-layer molding part may optionally include a phosphor. The molding part 190 may be a single layer or a multi-layer structure disposed on the upper surface of the second body 110A or the upper surface of the body 110. Here, the upper surface of the body 110 is the opposite surface to the lower surface of the body 110 and may be the uppermost surface. When the molding part 190 is disposed on the upper surface of the body 110, it may be provided with the same vertical side as the side of the molding part 190. That is, the top surface area of the molding part 190 may be the same as the top surface area of the body 110.

The molding part 190 may include an insulating material. The molding part 190 may include a transparent insulating material. The molding part 190 may include a wavelength conversion means that receives light emitted from the light emitting device 120 and provides wavelength-converted light. For example, the molding part 190 may be made of at least one selected from the group including phosphors, quantum dots, etc. The light emitting device 120 may emit blue, green, red, white, infrared, or ultraviolet light. The phosphor or quantum dot may emit blue, green, or red light. The molding part 190 may not be formed.

The phosphor disposed inside or below the molding part 190 may include a phosphor of a fluoride compound, for example, at least one of an MGF-based phosphor, a KSF-based phosphor, or a KTF-based phosphor. The phosphors may emit different peak wavelengths, and the light emitted from the light emitting device may emit different yellow and red colors or different red peak wavelengths. One type of the phosphor may include a red phosphor. The red phosphor may have a wavelength range from 610 nm to 650 nm, and the wavelength may have a full width at half maximum of less than 10 nm. The red phosphor may include a fluoride-based phosphor. The fluorite-based phosphor _is KSF-based red K ₂ SiF ₆ : _{Mn 4+} , K ₂ TiF ₆ :Mn _{4+ ,} NaYF ₄ :Mn _{4+ ,} NaGdF ₄ :Mn ₄₊ , K ₃ SiF ₇ :Mn ₄₊ It may include at least one of them. The KSF-based phosphor, for example, may have a composition formula of K _a Si _1-c F _b :Mn ⁴⁺ _c , where a is 1 ≤ a ≤ 2.5, b is 5 ≤ b ≤ 6.5, and c is 0.001 ≤ c. ≤ 0.1 can be satisfied. Additionally, in order to improve reliability at high temperature/high humidity, the fluorite-based red phosphor may be coated with a fluoride that does not contain Mn, or may further include an organic coating on the surface of the phosphor or the surface of the fluoride coating that does not contain Mn. In the case of the fluorite-based red phosphor as described above, unlike other phosphors, it can realize a narrow width at half maximum of 10 nm or less, so it can be used in high-resolution devices.

The composition of the phosphor according to the embodiment must basically comply with stoichiometry, and each element can be replaced with another element within each group on the periodic table. For example, Sr can be replaced with alkaline earth (II) group Ba, Ca, Mg, etc., and Y can be replaced with lanthanide group Tb, Lu, Sc, Gd, etc. In addition, Eu, etc., which is an activator, can be replaced with Ce, Tb, Pr, Er, Yb, etc. depending on the desired energy level, and the activator can be used alone or an activator can be additionally applied to modify the properties.

The quantum dot phosphor may include a group II-VI compound or a group III-V compound semiconductor, and may emit red light. The quantum dots are, for example, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In, Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS ₂ , CuInSe ₂ , etc. and combinations thereof.

The first bonding part 121 and the second bonding part 122 of the light emitting device 120 according to an embodiment of the invention provide driving power through the first and second metal parts 111 and 113 and conductive parts 221 and 223. You can receive it. Additionally, the melting points of the conductive portions 221 and 223 may be selected to have a higher melting point than that of other bonding materials. The light emitting device package 100 may be supplied mounted on a sub-mount or circuit board. However, when conventional light emitting device packages are mounted on submounts or circuit boards, high temperature processes such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon may occur in the bonding area between the conductive part provided in the light emitting device package and the light emitting device, thereby weakening the stability of the electrical connection and physical bond. Accordingly, the light emitting device package 100 according to the embodiment does not generate a re-melting phenomenon even when bonded to a circuit board or main board through a reflow process, and thus has electrical connection and physical bonding strength. This has the advantage of not deteriorating. In addition, according to the light emitting device package 100 according to the embodiment, there is no need for the body 110 to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the body 110 from being damaged or discolored due to exposure to high temperatures.

Accordingly, the range of choices for materials constituting the body 110 can be expanded. According to an embodiment, the body 110 may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material. For example, the body 110 includes at least one material selected from the group including PolyPhtalAmide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, Epoxy Molding Compound (EMC) resin, and Silicone Molding Compound (SMC) resin. can do.

Here, the manufacturing process of the above-mentioned light emitting device package is described as follows.

A body made of resin and a plurality of through holes penetrating the upper and lower surfaces of the body are formed (step a). The through hole may be formed after making the body, or may be formed integrally with the body. Once the body is prepared, the process of forming the first resin on the body (step b) is performed. Thereafter, a light-emitting device is placed on the first resin to align the first and second bonding portions of the light-emitting device with the plurality of through holes, respectively (step c), and the light-emitting device is placed on the first resin. It is placed, and the first resin on which the light emitting device is placed is cured (step d). Thereafter, metal parts are deposited on the lower surface of the body, the inner surfaces of the plurality of through holes, and the lower surfaces of the first and second bonding parts exposed to the upper surfaces of the plurality of through holes (step e). At this time, the metal part is deposited on the exposed area on the lower surface of the body, and the exposed area on the lower surface of the first and second bonding parts can be blocked from deposition with a mask or exposed to allow deposition. Thereafter, the metal portion is removed and separated from the lower surface of the body disposed between the plurality of through holes (step f). A molding part containing a phosphor is formed on the light emitting device (step g). The molding part may be formed as a single layer or multiple layers, and the layer containing the phosphor may be disposed in a cavity of the body or on the upper surface of the body. Afterwards, it is cut into package units, for example, packages having one or two light emitting devices. At this time, the side surface of the body and the side surface of the metal part can be arranged on the same plane due to the cut surface. Additionally, the side surface of the body and the side surface of the molding portion disposed on the body may be disposed on the same plane.

Here, the metal portion is disposed in each of the plurality of through holes, so that the first bonding portion and the second bonding portion face each other with the metal portion on the through hole, thereby facilitating electrical connection.

Figure 8 is a first modified example of the light emitting device package of Figure 4.

Referring to FIG. 8, the body 110 or the first body 115 may include a single through hole TH0. The through hole TH0 is disposed below the light emitting device 120 and may overlap the first and second bonding parts 121 and 122 in the vertical direction.

A second resin 162 is disposed around the upper portion of the light emitting device 120 to attach the light emitting device 120 to the first body 115.

The first metal portion 111 may be disposed on the first inner surface of the through hole TH0, and the second metal portion 1113 may be disposed on a second inner surface of the through hole TH0 opposite to the first inner surface. Accordingly, the first bonding part 121 of the light emitting device 120 may be connected to the first metal part 111, and the second bonding part 122 may be connected to the second metal part 113. And, the conductive portion may be connected to each bonding portion (111, 113) through each metal portion (111, 113). The light emitting device 120 can receive power through this path.

An extension protrusion P1 may be disposed on the inner surfaces of the first metal part 111 and/or the second metal part 113 and the through hole TH0. A metal protrusion P3 may be disposed on the extension protrusion P1. For a description of the extension protrusion (P1) and the protrusion (P3), refer to the above description.

Figure 10 is a second modified example of the light emitting device package of Figure 5, and Figure 11 is a detailed configuration diagram of the through hole of Figure 10. For parts that are identical to the configuration disclosed above, reference will be made to the configuration and description above. The second modified example may optionally include the configuration disclosed above.

Referring to FIGS. 10 and 11 , the light emitting device package is an example in which the first and second through holes TH1 and TH2 of the body 110 have different upper and lower areas. For example, the first and second through holes TH1 and TH2 may have asymmetrical upper and lower shapes. The first and second through holes TH1 and TH2 may have different upper and lower centers in at least one or both of the first and second directions. Additionally, the first recess R1 may be placed in the center of the light emitting device 120 or may be placed on both sides as shown in FIG. 1 .

The first and second through holes TH1 and TH2 of the body 110 may include a first inner surface (Sa) and a second inner surface (Sb). In the first and second through holes TH1 and TH2, the first inner surface Sa may include an inclined surface, a surface where a vertical surface and an inclined surface are connected, or a concave curved surface. In the first and second through holes TH1 and TH2, the second inner surface Sb may include an inclined surface, a surface where a vertical surface and an inclined surface are connected, or a concave curved surface. Extension protrusions (P1, P2) may be disposed on at least one of the first inner surface (Sa) and the second inner surface (Sb), and the metal portions (111, 113) on which the extension protrusions (P1, P2) are disposed may have protrusions ( P3, P4) can be placed.

The center of the first through hole (TH1) is moved in the direction of the first side (S1) compared to the center of the upper surface, and the center of the second through hole (TH2) is moved in the direction of the second side (S2) compared to the center of the upper surface. can be moved to The inclination angles of the two opposing inner surfaces Sa and Sb within the first and second through holes TH1 and TH2 may be provided differently. Here, the inner surfaces (Sa, Sb) are described as the first inner surfaces (Sa), and the sides close to both sides (S1, S2) of the body 110 in the first and second through holes (TH1, TH2) are described as the first inner surfaces (Sa). The surface corresponding to or opposite the inner surface (Sa) will be described as the second inner surface (Sb). For example, in the first through hole TH1, the first inclination angle c1 of the first inner surface Sa with respect to the upper surface of the first through hole TH1 is the second inclination angle of the second inner surface Sb ( It may be smaller than c2). The first tilt angle c1 may range from 5 degrees to 50 degrees, and the second tilt angle has a relationship of c1<c2 and may range from 40 degrees to 89 degrees. The first and second inclination angles (c1, c2) of the first and second inner surfaces (Sa, Sb) may be angles of a straight line connecting the top and bottom of each through hole (TH1, TH2).

When the upper part of the second inner surface Sb in the first and second through holes TH1 and TH2 is a vertical surface and the lower part is an inclined surface, the height of the lower part having an inclined surface in the through holes TH1 and TH2 may be greater than the height of the upper part, which has a vertical surface. In the first and second through holes TH1 and TH2, the top of the first inner surface Sa and the top of the second inner surface Sb may be curved or angled. When the top of the first inner surface (Sa) and the top of the second inner surface (Sb) in the first and second through holes TH1 and TH2 are curved, the bonding efficiency with the metal parts 111 and 113 can be improved. and can prevent end damage. In the first and second through holes TH1 and TH2, the first inner surface Sa has a larger area than the second inner surface Sb and is provided as an inclined surface, so that the conductive parts 221 and 223 are provided in liquid form. It is easy to inject, and the contact area with the conductive parts 221 and 223 can be increased. Additionally, since injection efficiency is increased, the generation of voids in the area between the conductive parts 221 and 223 and the bonding parts 121 and 122 can be suppressed. As shown in FIGS. 9 and 12 , conductive portions 221 and 223 may be disposed in these through holes TH1 and TH2.

The upper width b1 of the first through hole TH1 may be smaller than the lower width b2. The lower width b2 may be arranged in a range of 1.1 to 3 times the upper width b1, thereby improving the injection efficiency of the conductive portion through the lower area. The first direction distance (a1) extending vertically between the top and bottom of the first inner surface (Sa) may be greater than the second direction distance (a2) extending vertically between the top and bottom of the second inner surface (Sb). there is. The a1 may be 1.1 times 4 times the range of a2, thereby maximizing the area of the first inner surface (Sa) and increasing the contact area with the conductive part. In addition, the first inner surface (Sa) in the through hole (TH1) is spaced apart from the side of the light emitting device 120 at a predetermined distance (c3), for example, 200 micrometers or more, for example, 200 to 500 micrometers, so that the conductive portion is positioned on the body. Problems with penetration or large amounts of resin penetrating into through holes can be suppressed.

Figure 12 is a third modified example of the light emitting device package of Figure 5 or Figure 10. For parts that are identical to the configuration disclosed above, reference will be made to the configuration and description above. The third modified example may optionally include the configuration disclosed above.

Referring to FIG. 12, the light emitting device package includes a body 110 and a light emitting device 120, through holes TH1 and TH2 of the body 110, and metal parts 111 and 113 at the bottom of the light emitting device 120. can do. The extension protrusions (P1, P2) disposed in each of the through holes (TH1, TH2) will be referred to the above description.

The metal parts 111 and 113 may include a first metal part 111 in the first through hole TH1 and a second metal part 113 in the second through hole TH2. The first metal portion 111 is disposed on the inner surface of the first through hole TH1 and may include a first metal connection portion Pc1 facing the first bonding portion 121 of the light emitting device 120. You can. The first metal connection portion Pc1 connects the metal portion disposed on the first inner surface Sa of the first through hole TH1 with the metal portion disposed on the second inner surface Sb. The first metal connection part Pc1 may be in contact with or deposited on the first bonding part 121. The second metal portion 113 is disposed on the inner surface of the second through hole TH2 and may include a second metal connection portion Pc2 facing the second bonding portion 122 of the light emitting device 120. You can. The second metal connection portion Pc2 connects the metal portion disposed on the first inner surface Sa of the second through hole TH2 with the metal portion disposed on the second inner surface Sb. The second metal connection part Pc2 may be in contact with or deposited on the second bonding part 122.

This first metal connection part (Pc1) is disposed on the inner surface and upper surface of the first through hole (TH1) and can be in contact with and connected to the first bonding part 121 of the light emitting device 120. The second metal connection part Pc2 is disposed on the inner surface and upper surface of the second through hole TH2 and may be in contact with and connected to the second bonding part 122 of the light emitting device 120. When the metal parts 111 and 113 having the first and second metal connection parts Pc1 and Pc2 are provided with the conductive parts of FIGS. 9 and 13, the conductive bonding efficiency can be increased and the thermal and electrical conductivity can be improved. You can.

Figure 14 is a cross-sectional view showing an example of a light-emitting device applied to a light-emitting device package according to an embodiment of the invention.

Referring to FIG. 14, the light emitting device conceptually shows only the relative arrangement relationship between the first electrode 627 and the second electrode 628. The first electrode 627 may include a first bonding portion 621 and a first branch electrode 625. The second electrode 628 may include a second bonding portion 622 and a second branch electrode 626.

The light emitting device may include a light emitting structure 623 disposed on a substrate 624. The substrate 624 may be selected from the group including sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 624 may be provided as a Patterned Sapphire Substrate (PSS) with a concavo-convex pattern formed on its upper surface.

The light emitting structure 623 may include a first conductive semiconductor layer 623a, an active layer 623b, and a second conductive semiconductor layer 623c. The active layer 623b may be disposed between the first conductive semiconductor layer 623a and the second conductive semiconductor layer 623c. For example, the active layer 623b may be disposed on the first conductive semiconductor layer 623a, and the second conductive semiconductor layer 623c may be disposed on the active layer 623b.

According to an embodiment, the first conductive semiconductor layer 623a may be provided as an n-type semiconductor layer, and the second conductive semiconductor layer 623c may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductive semiconductor layer 623a may be provided as a p-type semiconductor layer, and the second conductive semiconductor layer 623c may be provided as an n-type semiconductor layer.

The light emitting device may include a first electrode 627 and a second electrode 628. The first electrode 627 may include a first bonding portion 621 and a first branch electrode 625. The first electrode 627 may be electrically connected to the second conductive semiconductor layer 623c. The first branch electrode 625 may be disposed to branch from the first bonding portion 621. The first branch electrode 625 may include a plurality of branch electrodes branched from the first bonding portion 621. The second electrode 628 may include a second bonding portion 622 and a second branch electrode 626. The second electrode 628 may be electrically connected to the first conductive semiconductor layer 623a. The second branch electrode 626 may be disposed to branch from the second bonding portion 622. The second branch electrode 626 may include a plurality of branch electrodes branched from the second bonding portion 622.

The first branch electrode 625 and the second branch electrode 626 may be arranged to stagger each other in a finger shape. Power supplied through the first bonding part 621 and the second bonding part 622 by the first branch electrode 625 and the second branch electrode 626 is supplied to the entire light emitting structure 623. It can be spread and provided.

The first electrode 627 and the second electrode 628 may be formed in a single-layer or multi-layer structure. For example, the first electrode 627 and the second electrode 628 may be ohmic electrodes. For example, the first electrode 627 and the second electrode 628 include ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni , Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy of two or more of these materials.

Meanwhile, a protective layer may be further provided on the light emitting structure 623. The protective layer may be provided on the upper surface of the light emitting structure 623. Additionally, the protective layer may be provided on the side of the light emitting structure 623. The protective layer may be provided so that the first bonding part 621 and the second bonding part 622 are exposed. Additionally, the protective layer may be selectively provided on the periphery and bottom of the substrate 624.

By way of example, the protective layer may be provided as an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y It may be formed of at least one material selected from the group containing.

In the light emitting device according to the embodiment, light generated in the active layer 623b may be emitted in the direction of six sides of the light emitting device. Light generated in the active layer 623b may be emitted in six directions through the top, bottom, and four sides of the light emitting device.

As another example of a light-emitting device, at least one of the first electrode and the second electrode may be implemented in a pattern shape, and a conductive protrusion may be disposed on the pattern-shaped electrode. The pattern may include a pattern having one or more arm shapes or branch shapes. Alternatively, conductive protrusions may be disposed on each bonding portion of the light emitting device. The light emitting device was described as having a structure with one light emitting cell. This means that when a light-emitting cell includes the light-emitting structure described above, the driving voltage of the light-emitting device may be the voltage applied to one light-emitting cell. As an example of the light emitting device disclosed in the embodiment, a light emitting device having two light emitting cells may be disclosed.

The light emitting device disclosed above was described as having a structure having one light emitting cell. This means that when a light-emitting cell includes the light-emitting structure described above, the driving voltage of the light-emitting device may be the voltage applied to one light-emitting cell. Examples of the light emitting device disclosed in the embodiment may include a light emitting device having two or three or more light emitting cells. Accordingly, a high voltage light emitting device package can be provided.

Meanwhile, the light emitting device package according to the embodiment of the invention described above may be supplied mounted on a submount or circuit board. However, when conventional light emitting device packages are mounted on submounts or circuit boards, high temperature processes such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon may occur in the bonding area between the frame provided in the light-emitting device package and the light-emitting device, thereby weakening the stability of the electrical connection and physical bonding, and thus the position of the light-emitting device. may change, and the optical and electrical characteristics and reliability of the light emitting device package may deteriorate. However, according to the light-emitting device package and the light-emitting device package manufacturing method according to the embodiment of the invention, the bonding parts of the light-emitting device according to the embodiment of the invention can receive driving power through the protruding portion and the conductive portion. Additionally, the melting point of the protrusion and the conductive portion may be selected to have a higher value than the melting point of a general bonding material. Therefore, the light emitting device package according to the embodiment of the invention does not cause re-melting even when bonded to the main board, etc. through a reflow process, so the electrical connection and physical bonding force do not deteriorate. There is an advantage.

In addition, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment of the invention, there is no need for the package body to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to an embodiment of the invention, it is possible to prevent the package body from being damaged or discolored due to exposure to high temperatures. Accordingly, the range of choices for materials constituting the body can be expanded. According to an embodiment of the invention, the body may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material. For example, the body may include at least one material selected from the group including PolyPhtalAmide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, Epoxy Molding Compound (EMC) resin, and Silicone Molding Compound (SMC) resin. .

Meanwhile, one or more light emitting device packages according to an embodiment of the invention may be placed on a circuit board and applied to a light source device. Additionally, the light source device may include a display device, a lighting device, a headlamp, etc. depending on the industrial field.

As an example of a light source device, a display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, and a light emitting module disposed in front of the reflector and guiding the light emitted from the light emitting module forward. A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, and the display panel It may include a color filter disposed in the front. Here, the bottom cover, reflector, light emitting module, light guide plate, and optical sheet may form a backlight unit. Additionally, the display device may not include a color filter and may have a structure in which light emitting elements that emit red, green, and blue light are respectively disposed.

As another example of a light source device, a headlamp includes a light emitting module including a light emitting element package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a certain direction, for example, forward, and a light that is reflected by the reflector. It may include a lens that refracts light forward, and a shade that blocks or reflects a portion of the light reflected by the reflector and heading to the lens to achieve a light distribution pattern desired by the designer.

A lighting device, which is another example of a light source device, may include a cover, a light source module, a heat sink, a power supply unit, an internal case, and a socket. Additionally, the light source device according to an embodiment of the invention may further include one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment of the invention.

The features, structures, effects, etc. described in the embodiments above are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified and implemented in other embodiments by a person with ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

Although the above description focuses on the embodiment, this is only an example and does not limit the embodiment, and those skilled in the art will understand that there are various options not exemplified above without departing from the essential characteristics of the present embodiment. You will see that variations and applications of branches are possible. For example, each component specifically shown in the examples can be modified and implemented. And these variations and differences related to application should be interpreted as being included in the scope of the embodiments set forth in the appended patent claims.

110: body 110A: second body
111,113: metal part 111B, 113B: extension part
115: first body 120: light emitting device
121,122: Bonding part TH1, TH2: Through hole
160: first resin 162: second resin
201: circuit board 211,213: pad
221,223: Conductive part P1, P2: Extension protrusion
Pa, Pb: Connection P3, P4: Protrusion
Pc1,Pc2: Metal connection

Claims (17)

A body including a plurality of through holes that penetrate the upper and lower surfaces and are spaced apart from each other;
a light emitting device disposed on the body and including first and second bonding portions facing each of the plurality of through holes;
a first resin disposed between the light emitting device and the upper surface of the body;
a metal portion disposed on an inner surface of each of the plurality of through holes;
The first resin includes an extension protrusion extending on the inner surface of at least one of the plurality of through holes,
The metal portion surrounds the surface of the extended protrusion,
The extension protrusion is disposed between the body and the metal portion,
A light emitting device package wherein a protrusion is formed on an area of the metal part corresponding to the extension protrusion to surround the extension protrusion, and the protrusion is formed to protrude in the same direction as the protrusion direction of the extension protrusion. The method of claim 1, wherein the first resin is disposed between the first bonding part and the second bonding part of the light emitting device,
The extension protrusion overlaps one or both of the first and second bonding parts in a vertical direction,
The first resin includes a connection portion disposed between a portion of the first or second bonding portion and the body, and the connection portion is connected to the extension protrusion. The method of claim 1 or 2, comprising a second resin disposed around the lower portion of the light emitting element,
The second resin is connected to the first resin,
The metal portion disposed in each of the plurality of through holes includes an extension portion extending from a lower surface of the body toward different side surfaces. The light emitting device package of claim 1 or 2, wherein a plurality of the extension protrusions are disposed on top of each of the plurality of through holes. Forming a body having a plurality of through holes penetrating the upper and lower surfaces;
forming a first resin on the body;
disposing a light emitting device on the first resin and aligning first and second bonding portions of the light emitting device with each of the plurality of through holes;
curing the first resin on which the light emitting device is disposed;
Depositing a metal portion on the lower surface of the body, the inner surface of the plurality of through holes, and the lower surface of the first and second bonding parts exposed to the upper surface of the plurality of through holes; and
A step of removing part of the metal part from the lower surface of the body disposed between the plurality of through holes and separating it into a plurality of metal parts,
The metal parts are disposed in each of the plurality of through holes, so that the first bonding part and the second bonding part face each other,
In the step of forming the first resin, the first resin is formed with an extension protrusion extending to the inner surface of at least one of the plurality of through holes,
In the step of depositing the metal portion, the metal portion surrounds a surface of the extended protrusion extending to an inner surface of at least one of the through holes. The method of claim 5, wherein the metal part removal process is performed by a laser scribing process,
A method of manufacturing a light emitting device package, wherein a lower surface area of the body from which the metal portion is removed between the plurality of through holes is formed as a concave concave portion.
delete delete delete delete delete delete delete delete delete delete delete

Images