KR102471691B1 - Light emitting device package and light unit - Google Patents

Abstract

A light emitting device package disclosed in an embodiment of the present invention includes a first frame and a second frame that are spaced apart from each other and include upper and lower surfaces, respectively; a body disposed between the first frame and the second frame; and a light emitting element disposed on the body. The first frame and the second frame each include a first protrusion and a second protrusion protruding toward the light emitting element from upper surfaces of the first and second frames, and the light emitting element includes the first protruding part. It may include a first bonding part facing the first protrusion and a second bonding part facing the second protrusion.

Description

Light emitting device package and light source device {LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT}

The embodiment relates to a light emitting device package, a semiconductor device package, a method for manufacturing a semiconductor device package, and a light source device.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in various ways such as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials are developed in thin film growth technology and device materials to produce red, green, It has the advantage of being able to implement light in various wavelength bands such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material can implement a white light source with high efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when light receiving devices such as photodetectors or solar cells are manufactured using Group 3-5 or Group 2-6 compound semiconductor materials, photocurrent is generated by absorbing light in various wavelength ranges through the development of device materials. By doing so, it is possible to use light in a wide range of wavelengths from gamma rays to radio wavelengths. In addition, such a light-receiving element has advantages of fast response speed, safety, environmental friendliness, and easy control of element materials, so that it can be easily used in power control or ultra-high frequency circuits or communication modules.

Accordingly, the semiconductor device can replace a transmission module of an optical communication means, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, and can replace a fluorescent lamp or an incandescent bulb. Applications are expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

The light emitting device (Light Emitting Device) may be provided as, for example, a p-n junction diode having a characteristic of converting electrical energy into light energy using a group 3-5 element or a group 2-6 element on the periodic table, and a compound semiconductor Various wavelengths can be implemented by adjusting the composition ratio.

For example, nitride semiconductors are of great interest in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, red light emitting devices, and the like using nitride semiconductors are commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, as a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm, in the wavelength range, in the case of a short wavelength, it is used for sterilization and purification, and in the case of a long wavelength, an exposure machine or a curing machine, etc. can be used

Ultraviolet light can be divided into three types in order of wavelength: UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm), and UV-C (200nm ~ 280nm). UV-A (315nm ~ 400nm) area is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit money discrimination, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm ~ 315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as semiconductor devices capable of providing high output are requested, research on semiconductor devices capable of increasing output by applying high power is being conducted.

In addition, in a semiconductor device package, research is being conducted on a method capable of improving light extraction efficiency of the semiconductor device and improving light intensity at the package end. In addition, in a semiconductor device package, research into a method for improving a bonding force between a package electrode and a semiconductor device is being conducted.

In addition, in semiconductor device packages, research is being conducted on ways to reduce manufacturing cost and improve manufacturing yield through process efficiency improvement and structural change.

Embodiments of the present invention provide a light emitting device package, a semiconductor device package, and a method of manufacturing the same, in which protrusions of frames facing each bonding portion of the light emitting device protrude.

Embodiments provide a light emitting device package, a semiconductor device package, and a method of manufacturing the same in which a conductive portion is formed by giving a predetermined gap between each bonding portion of the light emitting device and the protruding portion of the frame facing each other.

An embodiment of the present invention is a light emitting device package and a semiconductor device in which a support portion of a body is disposed between bonding portions of light emitting devices, and a space is provided between each bonding portion of the light emitting device and a protruding portion of a frame to suppress the spread of the conductive portion. A device package and a manufacturing method thereof are provided.

An embodiment of the present invention provides a light emitting device package, a semiconductor device package, and a method of manufacturing the same, in which the bonding portion of the light emitting device is spaced apart from the protruding portion of the frame by arranging the support portion of the body at a height different from that of the protruding portion of the frame.

An embodiment of the present invention provides a light emitting device package, a semiconductor device package, and a method of manufacturing the same, in which light reflection efficiency is improved by disposing a first resin around the protruding portion of the frame.

Embodiments of the present invention may provide a semiconductor device package, a method for manufacturing a semiconductor device package, and a light source device capable of improving light extraction efficiency and electrical characteristics.

An embodiment of the present invention provides a light emitting device package having a recess on an upper portion of a body, a light emitting device package, a semiconductor device package, and a manufacturing method thereof.

An embodiment of the present invention provides a light emitting device package, a semiconductor device package, and a method of manufacturing the same, which can reduce the exposure area of a frame by disposing a reflective wall of a resin material having a multi-step structure around the lower portion of the light emitting device.

Embodiments of the present invention provide a light emitting device package having protrusions for preventing movement of the light emitting device around the light emitting device, a semiconductor device package, and a manufacturing method thereof.

Embodiments may provide a semiconductor device package, a light emitting device package, a method of manufacturing a semiconductor device package, and a light source device in which a region protruding from a body is disposed under a light emitting device so as to surround the periphery of a frame.

The embodiment may provide a semiconductor device package, a light emitting device package, a semiconductor device package manufacturing method, and a light source device capable of reducing manufacturing cost and improving manufacturing yield by improving package process efficiency and presenting a new package structure.

The embodiment manufactures a semiconductor device package, a light emitting device package, and a semiconductor device package capable of preventing re-melting from occurring in a bonding area of a semiconductor device package in the process of re-bonding the semiconductor device package to a substrate or the like. method can be provided.

A light emitting device package according to an embodiment of the present invention includes a first frame and a second frame that are spaced apart from each other and include upper and lower surfaces, respectively; a body disposed between the first frame and the second frame; and a light emitting element disposed on the body. The first frame and the second frame each include a first protrusion and a second protrusion protruding toward the light emitting element from upper surfaces of the first and second frames, and the light emitting element includes the first protruding part. It may include a first bonding part facing the first protrusion and a second bonding part facing the second protrusion.

According to an embodiment of the invention, the body may include a support that protrudes toward the light emitting device.

According to an embodiment of the invention, the support portion of the body has a first height based on the top surface of the first frame, and the first and second protrusions have a second height based on the top surface of the first frame, The first height and the second height may be different from each other.

According to an embodiment of the invention, the upper surface of the first frame and the upper surface of the second frame may be disposed on the same plane.

According to an embodiment of the present invention, the first and second protrusions have first and second flat surfaces having flat upper surfaces, and the widths of the first and second bonding parts and the first and second flat surfaces are mutually exclusive. can be different

According to an embodiment of the present invention, the first height is disposed higher than the second height, and the upper surface of the support part may be disposed higher than the upper surface of the first and second bonding parts based on the upper surface of the first frame.

According to an embodiment of the present invention, a first conductive portion between the first bonding portion and the first protrusion and a second conductive portion between the second bonding portion and the second protrusion, wherein the first and second A thickness of the conductive portion may be equal to a difference between the first and second heights.

According to an embodiment of the invention, the support portion of the body includes first and second recesses spaced apart from each other, and the first recess overlaps the light emitting element in a vertical direction with an inner portion, from one side of the light emitting element. An outer portion extending in an outward direction, and the second recess may include an inner portion overlapping the light emitting device in a vertical direction and an outer portion extending outward from the other side of the light emitting device.

According to an embodiment of the present invention, a first resin disposed between the light emitting element and the body may be included, and the first resin may be disposed in the first and second recesses.

According to an embodiment of the present invention, a second resin may be included around the lower portion of the light emitting device, and the second resin may be disposed around the first and second protrusions.

According to an embodiment of the present invention, a plurality of spacers are respectively disposed on a lower surface of the corner portion of the light emitting device, and the plurality of spacers may separate the light emitting device from the upper surfaces of the first and second protrusions.

According to an embodiment of the invention, an upper body disposed around the body and upper circumferences of the first and second frames and having a cavity therein, the side of the cavity has a flat upper surface, and the first and second frames A first reflective wall extending in the direction of the protrusion may be included.

According to an embodiment of the present invention, a second resin is included on the lower circumference of the light emitting element, the first reflection wall has an angle greater than the inclination angle of the side of the cavity, and the second resin is the first and second resin. It is disposed on the periphery of the second protrusion and may protrude along the first reflection wall.

According to an embodiment of the present invention, a second reflective wall extending from the first reflective wall toward the first and second protrusions is included at a lower side of the cavity, and an upper surface of the second reflective wall is the first reflective wall. may have a height lower than the top surface of the first and second reflective walls, the top surfaces of the first and second reflective walls may be flat, and the area of the flat top surface of the first reflective wall may be greater than the area of the flat top surface of the second reflective wall.

According to an embodiment of the present invention, the height of the second reflective wall is lower than the lower surface of the light emitting device and disposed higher than upper surfaces of the first and second protrusions, and the second reflective wall may be connected to the support part.

A light source device according to an embodiment of the present invention includes a circuit board; and one or a plurality of light emitting device packages on the circuit board.

According to an embodiment of the present invention, the bearing capacity of the light emitting device may be improved and heat dissipation characteristics and heat conduction characteristics may be improved by the conductive portion disposed between the bonding portion and the frame of the light emitting device.

According to an embodiment of the present invention, by arranging a plurality of recesses of the body disposed under the light emitting element, it is possible to improve the adhesive force with the light emitting element.

According to an embodiment of the present invention, reflection efficiency can be improved by extending the side of the cavity having a multi-stage step structure around the lower portion of the light emitting device toward the light emitting device.

According to an embodiment of the present invention, the wavelength conversion efficiency can be improved by adjusting the distribution of phosphors in the molding part by extending the side of the cavity having a multi-stage step structure around the lower portion of the light emitting device toward the light emitting device.

According to an embodiment of the present invention, by giving a recess to the body, it is possible to improve the adhesion of the light emitting device.

According to an embodiment of the invention, there is an advantage of improving light extraction efficiency, electrical characteristics, and reliability.

According to an embodiment of the invention, it is possible to prevent the tilt of the light emitting device.

According to an embodiment of the present invention, it is possible to prevent the light emitting element from being re-melted by external heat by bonding the light emitting element with resin.

According to an embodiment of the present invention, there is an advantage of reducing manufacturing cost and improving manufacturing yield by improving process efficiency and presenting a new package structure.

According to an embodiment of the present invention, by providing a body having high reflectivity, discoloration of the reflector can be prevented, thereby improving reliability of the semiconductor device package.

According to an embodiment of the present invention, there is an advantage in preventing a re-melting phenomenon from occurring in a bonding area of a semiconductor device package in a process of re-bonding the device package to a substrate or the like.

1 is a combined perspective view of a light emitting device package according to a first embodiment of the present invention.
FIG. 2 is an exploded perspective view of a light emitting device and a package body in the light emitting device package of FIG. 1 .
FIG. 3 is a plan view of the light emitting device package of FIG. 1 .
FIG. 4 is a bottom view of the light emitting device package shown in FIG. 3 .
FIG. 5 is a BB-side cross-sectional view of the light emitting device package in FIG. 3 .
FIG. 6 is an enlarged view illustrating a protruding portion of a frame of a light emitting device package and a bonding portion of a light emitting device in FIG. 3 .
FIG. 7 is a side cross-sectional view illustrating a recess in a support part of a body of a light emitting device package in FIG. 3 .
8 is a cross-sectional view of the light emitting device package of FIG. 3 viewed from the CC side.
(a) (b) of FIG. 9 are diagrams for explaining regions of the first resin and the second resin disposed under the light emitting element in FIG. 3 .
FIG. 10 is a view explaining a process of forming a second resin in the light emitting device package of FIG. 9 .
11 is a view showing another example of the light emitting device package of FIG. 3 .
12 is a perspective view of a light emitting device package according to a second embodiment of the present invention.
13 is a plan view of the light emitting device package of FIG. 12 .
14 is a DD-side cross-sectional view of the light emitting device package of FIG. 13 .
FIG. 15 is a view showing an example in which a phosphor is precipitated on the side of a cavity in the light emitting device package of FIG. 14 .
16 is a EE-side cross-sectional view of the light emitting device package of FIG. 13 .
17 is another example of a light emitting device package according to an embodiment of the present invention.
18 is an example of a light source device having the light emitting device package of FIG. 5 .
19 is a plan view illustrating an example of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.
FIG. 20 is a cross-sectional view of the light emitting device shown in FIG. 19 along line FF.

An embodiment of the invention will be described with reference to the accompanying drawings. In the description of an embodiment of the invention, each layer (film), region, pattern or structure is "on/over" or "under" the substrate, each layer (film), region, pad or pattern. )”, “on/over” and “under” mean “directly” or “indirectly” formed through another layer. All inclusive. In addition, the criterion for the top/top or bottom of each layer will be described based on the drawings, but the embodiment is not limited thereto.

A semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the present invention, the device package may include a semiconductor device or a light emitting device that emits light of ultraviolet, infrared, or visible light. Hereinafter, a description will be given based on the case where a light emitting element is applied as an example of a semiconductor device, and a package or light source device to which the light emitting element is applied may include a non-light emitting element such as a zener diode or a sensing element for monitoring wavelength or heat. can Hereinafter, a case in which a light emitting device is applied as an example of a semiconductor device will be described, and a light emitting device package will be described in detail.

<First Embodiment>

A light emitting device package according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 10 . 1 is a combined perspective view of a light emitting device package according to a first embodiment of the present invention, FIG. 2 is an exploded perspective view of a light emitting device and a package body in the light emitting device package of FIG. 1, and FIG. 3 is a plan view of the light emitting device package of FIG. 1 4 is a bottom view of the light emitting device package in FIG. 3, FIG. 5 is a B-B side sectional view of the light emitting device package in FIG. 3, and FIG. FIG. 7 is a side cross-sectional view showing a recess in the support part of the body of the light emitting device package in FIG. 3 , and FIG. 8 is a cross-sectional view of the light emitting device package of FIG. 3 viewed from the C-C side, and FIG. (b) is a view for explaining regions of the first resin and the second resin disposed under the light emitting device in FIG. 3, and FIG. 10 is a view for explaining a process of forming the second resin in the light emitting device package of FIG. 9 .

Referring to FIGS. 1 to 10 , the light emitting device package 100 may include a package body 110 and a light emitting device 120 .

1 to 3 , the length of the light emitting device package 100 in the first direction (X) may be greater than the length in the second direction (Y). The length in the first direction may be greater than the length of the package body 110 in the first direction. The length of the package body 110 in the first direction (X) may be longer than or equal to the length in the second direction (Y). In the following description, a first direction may be an X direction, a second direction may be a Y direction orthogonal to the X direction, and a third direction may be a Z direction orthogonal to the X and Y directions. The first direction may be a direction of a longer side of the sides of the light emitting device 120 . For example, the first direction may be a long side direction of the light emitting device 120, and the second direction may be a short side direction. Both short sides of the light emitting device 120 may be disposed on opposite sides in the first direction, and both long sides of the light emitting device 120 may be disposed on opposite sides in the second direction.

The package body 110 may include first and second side surfaces S1 and S2 disposed in a first direction, and third and fourth side surfaces S3 and S4 disposed in a second direction. A distance between the first and second side surfaces S1 and S2 may be the length of the third and fourth side surfaces S3 and S4 in the first direction. The distance between the third and fourth side surfaces S3 and S4 may be the length of the first and second side surfaces S1 and S2 in the first direction.

The package body 110 may include a plurality of frames. The plurality of frames may include at least two frames or three or more frames. The plurality of frames may include, for example, a first frame 111 and a second frame 113 . For convenience of explanation, it will be described with two frames. The first frame 111 and the second frame 113 may be spaced apart from each other in the first direction (X).

The package body 110 may include a body 115. The body 115 may be disposed between a plurality of frames. The body 115 may be combined with a plurality of frames. The body 115 may be disposed around each of the frames. The body 115 may be disposed between the first frame 111 and the second frame 113 . The body 115 may function as an electrode separation line between the first and second frames 111 and 113. The body 115 may also be referred to as an insulating member.

The body 115 may be disposed on the first frame 111 . The body 115 may be disposed on the second frame 113 . The body 115 may provide an inclined surface disposed on the first frame 111 and the second frame 113 . A cavity 102 may be provided on the first frame 111 and the second frame 113 by the inclined surface of the body 115 . According to an embodiment of the invention, the package body 110 may be provided in a structure with a cavity 102, or may be provided in a structure with a flat upper surface without the cavity 102. The body 115 may include an upper body 110A having a cavity 102 . The body 115 and the upper body 110A may be formed of the same material or may be made of different materials. The upper body 110A may be integrally formed with the body 115 or may be formed separately.

For example, the body 115 may be made of a resin material or an insulating resin material. The body 115 includes polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy, epoxy molding compound (EMC), silicone It may be formed of at least one selected from a group including a molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. The body 115 may be formed of a resin material, and may include a filler made of a high refractive index material such as TiO ₂ and SiO ₂ therein. The body 115 may be formed of a thermoplastic resin, and since the thermoplastic resin is a material that softens when heated and hardens again when cooled, when the frames 111 and 113 and materials in contact therewith expand or contract due to heat The body 115 may act as a shock absorber. At this time, when the body 115 performs the buffering action, it is possible to prevent damage to conductive parts such as solder-based paste, Ag-based paste, and SAC (Sn-Ag-Cu)-based paste. In the package, a coefficient of thermal expansion (CTE) according to thermal expansion and contraction may be greater in the first direction than in the second direction. The body 115 may include a PCT or PPA material, and the PCT or PPA material has a high melting point and is a thermoplastic resin.

The body 115 may include a support portion P0 protruding from the upper surfaces of the first and second frames 111 and 113 . The support portion P0 may be disposed to have a long length in the second direction. The support portion P0 may be disposed to face the lower surface of the light emitting device 120 . The support part P0 may be disposed between the first bonding part 121 and the second bonding part 122 of the light emitting element P0. A length of the support part P0 in the second direction may be longer than a length of the light emitting device 120 in the second direction. A width of the support portion P0 in the first direction may be smaller than a distance between the first bonding portion 121 and the second bonding portion 122 of the light emitting device 120 .

As shown in FIG. 7 , the bottom width Wa of the support part P0 may be wider than the distance between the first and second frames 111 and 113 . The bottom of the support part P0 extends in the direction of the first and second protruding parts P1 and P2 and may be disposed on the upper surfaces of the first and second frames 111 and 113 . The support portion P0 may overlap the upper surfaces of the first and second frames 111 and 113 in a vertical direction. An upper surface of the support portion P0 may be provided as a flat surface, and may be provided with a width equal to or narrower than the bottom width Wa. As another example, the upper surface of the support part P0 may include a convex curved surface, or may include at least one of a convex curved surface and an inclined surface.

As shown in FIGS. 2 and 4 , the upper body 110A may provide an inclined side surface 132 around the cavity 102 . The inclined side surface 132 may be inclined at different angles in the first direction and in the second direction. The inclined side surface 132 may be inclined at a second angle, and an inner side of the first reflective wall 134 from the side surface of the cavity 102 may be inclined at a first angle. The first angle may be greater than the second angle. The inner side of the first reflective wall 134 from the side of the cavity 102 is at an angle of 45 degrees or more, for example, 45 degrees to 70 degrees, so that parts such as burrs do not occur when injection molding the upper body 110A. range can be formed. The thickness of the first reflective wall 134 on the side surface 132 of the cavity 102 is disposed in a range of 100 micrometers or more, for example, 100 to 200 micrometers, and has the second angle and the light emitting element 120 can face the side of When the thickness of the first reflective wall 134 is less than the above range, it may be peeled off, and when it is thicker than the above range, improvement in light efficiency may be insignificant.

At the side surface 132 of the cavity 102, the first reflective wall 134 may extend adjacent to the side surface of the light emitting device 120 to reflect the light emitted to the side surface of the light emitting device 120. have. The first reflective wall 134 on the side of the cavity 102 may be disposed at an interval of 400 micrometers or less, for example, in a range of 200 to 400 micrometers in the first direction. The first reflective wall 134 is disposed adjacent to the side surface of the light emitting device 120 on the side surface of the cavity 102 to reflect incident light. Here, the distance between the side surface of the light emitting element 120 and the lower side surface of the cavity 102 in the second direction may be equal to or smaller than the distance in the first direction.

The first frame 111 and the second frame 113 may be provided as, for example, conductive frames. The conductive frame may be made of a metal such as copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver ( Ag), and may be formed as a single layer or multiple layers. The thickness of the first and second frames 111 and 113 may be formed in consideration of heat dissipation characteristics and electrical conductivity characteristics, and may be formed in a range of 100 micrometers or more, for example, 100 to 300 micrometers.

The first frame 111 and the second frame 113 may be provided as metal frames. The first frame 111 and the second frame 113 may stably provide structural strength of the package body 110 and may be electrically connected to the light emitting device 120 . The first extension parts 17 and 18 of the first frame 111 extend in the direction of the first side surface S1 of the package body 110 and may protrude one or more. The second extension parts 37 and 38 of the second frame 113 extend in the direction of the second side surface S2 of the package body 110 and may protrude one or more. The first and second extensions 17, 18, 37, and 38 may be disposed in one or a plurality, and in the case of a plurality of extensions, they may protrude from the respective frames 111 and 113 in a branched form. The first and second extension parts 17, 18, 37, and 38 may not protrude. The first and second side surfaces S1 and S2 of the package body 110 are spaced apart in a first direction and may be opposite sides. The third and fourth side surfaces S3 and S4 of the package body 110 are spaced apart in a second direction orthogonal to the first direction and may be opposite sides to each other. The first to fourth side surfaces S1, S2, S3, and S4 may be vertically or inclinedly disposed.

As shown in FIGS. 3 and 4 , step structures ST1 and ST2 may be disposed on the first and second frames 111 and 113 to strengthen coupling with the body 115 . For example, the first step structure ST1 is disposed in a stepped structure along the outer side of the first frame 111 to increase a bonding area with the body 115 to suppress moisture permeation. The second step structure ST2 is disposed in a stepped structure along the outer side of the second frame 113 to increase a bonding area with the body 115 and to suppress moisture permeation. Due to the first step structure ST1, the area of the upper surface of the first frame 111 may be larger than the area of the lower surface. Due to the second step structure ST2, the area of the upper surface of the second frame 113 may be larger than the area of the lower surface.

A part of the body 115 may be disposed in a region between the first extension parts 17 and 18 of the first frame 111 . A part of the body 115 may be disposed in an area between the second extension parts 37 and 38 of the second frame 113 . Step structures ST1 and ST2 may be formed in the first extension parts 17 and 18 and the second extension parts 37 and 38 . The stepped structure (ST1, ST2) increases the bonding area with the body 115, and can prevent moisture permeation.

A plurality of holes H1 and H2 may be disposed in the first and second frames 111 and 113, and the body 115 may be coupled through the holes H1 and H2. The first and second frames 111 and 113 may reinforce coupling with the body 115 . The holes H1 and H2 may be disposed in areas overlapping the body 115 among the first and second extension parts 17, 18, 37, and 38, thereby strengthening the bonding force with the body and preventing moisture permeation. can be suppressed A concave structure by an injection gate may be formed on a part of the bottom of the body 115 .

As shown in FIGS. 1 to 3 , the light emitting device package 100 according to an embodiment of the present invention may include a first protrusion P1 and a second protrusion P2. The first frame 111 may include a first protrusion P1. The second frame 113 may include a second protrusion P2. The first protrusion P1 and the second protrusion P2 may be disposed on the bottom of the cavity 102 . The first protrusion P1 and the second protrusion P2 may be spaced apart from each other in the second direction. The first protrusion P1 and the second protrusion P2 may be disposed under the area of the light emitting device 120 and overlap with the light emitting device 120 in a vertical direction.

As shown in FIGS. 6 and 7 , the first protrusion P1 may be provided on the first frame 111 . The first protruding portion P1 may protrude from the upper surface of the first frame 111 toward the light emitting device 120 . The first protruding portion P1 may protrude from the upper and lower surfaces of the first frame 111 in a vertical direction Z. A lower portion of the region corresponding to the first protrusion P1 may include the first concave portion P10. A height (Pb) of the first protrusion (P1) may be equal to a depth (e) of the first concave portion (P10).

The second protrusion P2 may be provided on the second frame 113 . The second protruding portion P2 may protrude from the upper surface of the second frame 113 toward the light emitting device 120 . The second protruding portion P2 may protrude from the upper and lower surfaces of the second frame 113 in a third direction. A lower portion of the region corresponding to the second protrusion P2 may include the second concave portion P20. A height Pb of the second protrusion P2 may be equal to a depth e of the second concave portion P20. The heights Pb of the first and second protrusions P1 and P2 may be 50 micrometers or less, for example, 25 to 50 micrometers based on the flat top surfaces of the first and/or second frames 111 and 113. can If the heights Pb of the first and second protrusions P1 and P2 are smaller than the above range, it is difficult to secure the thickness of the second resin 162, and light reflection efficiency may be insignificantly improved. Since the sizes of (P1 and P2) are also increased, it may be difficult to secure a space between the support parts (P0). Here, the height Pa of the support portion P0 may be referred to as a first height, and the heights Pb of the protrusions P1 and P2 may be referred to as a second height, and the first height may be different from the second height. can Alternatively, the first height may be greater than the second height.

As shown in FIGS. 6 and 8 , the upper surface of the first protrusion P1 may have a length (b1>b) greater in the second direction (Y) than the width (b) in the first direction (X). The first direction may be a horizontal direction, a long side direction of the package body 110, or a direction in which the two frames 111 and 113 are spaced apart. The second direction may be a vertical direction, a direction of a short side of the package body 110, or a direction in which the body 115 between the two frames 111 and 113 extends. The upper surface of the second protrusion P2 may have a length (b1>b) greater in the second direction (Y) than the width (b) in the first direction (X). The first direction may be a horizontal direction, a long side direction of the package body 110, or a direction in which the two frames 111 and 113 are spaced apart. The first direction may be a direction in which a virtual line connecting centers of the first and second protrusions P1 and P2 extends.

The first protruding portion P1 may face below the first bonding portion 121 of the light emitting device 120 . The first protrusion P1 may be overlapped with the first bonding portion 121 of the light emitting device 120 in a third direction. The first protrusion P1 may overlap the first bonding portion 121 of the light emitting device 120 in a third direction from the upper surface to the lower surface of the first frame 111 .

The second protruding portion P2 may face below the second bonding portion 122 of the light emitting device 120 . The second protrusion P2 may be overlapped with the second bonding portion 122 of the light emitting device 120 in a third direction. The second protrusion P2 may overlap the second bonding portion 122 of the light emitting device 120 in a third direction from the upper surface to the lower surface of the second frame 113 .

The first and second concave portions P10 and P20 are concave in a third direction from the lower surfaces of the first and second frames 111 and 113 to the upper surfaces of the first and second frames 111 and 113, and The ,2 concave portions P10 and P20 may overlap each of the protrusions P1 and P2 in the third direction, and may have the same depth as the heights of the first and second protrusions P1 and P2.

The support portion P0 of the body 115 may be disposed between the first and second protrusions P1 and P2. The length of the support part P0 in the second direction may be longer than the lengths of the first and second protrusions P1 and P2 in the second direction. An upper surface of the support portion P0 may provide a flat surface.

Upper surfaces of the first and second frames 111 and 113 may be disposed on the same plane. The first and second protrusions P1 and P2 have first and second flat surfaces having flat upper surfaces, and the width of the first and second bonding parts 121 and 122 and the width of the first and second flat surfaces. may be different from each other. For example, widths of the flat upper surfaces of the first and second bonding portions 12 and 122 may be greater than widths of the first and second flat surfaces of the first and second protrusions P1 and P2 .

According to an embodiment of the invention, the light emitting device 120 may include a first bonding portion 121 , a second bonding portion 122 , and a light emitting structure 123 . The light emitting device 120 may include a substrate 124 on the light emitting structure 123 . The length of the light emitting device 120 in the first direction may be the same as the length in the second direction or may be longer than the length in the first direction.

The light emitting structure 123 may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The first bonding part 121 may be electrically connected to the first conductivity type semiconductor layer. Also, the second bonding part 122 may be electrically connected to the second conductivity type semiconductor layer.

The substrate 124 is a light-transmitting layer and may be formed of an insulating material or a semiconductor material. The substrate 124 may be selected from a group including, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, a concave-convex pattern may be formed on the surface of the substrate 124 .

According to an embodiment of the invention, the light emitting structure 123 may be provided as a compound semiconductor. For example, the light emitting structure 123 may be provided as a Group 2-6 or Group 3-5 compound semiconductor. For example, the light emitting structure 123 includes at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). It can be.

The light emitting structure 123 may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first and second conductivity-type semiconductor layers may be implemented with at least one of group 3-5 or group 2-6 compound semiconductors. The first and second conductivity-type semiconductor layers are, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) can be formed as For example, the first and second conductivity type semiconductor layers may include at least one selected from a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductivity-type semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductivity-type semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The active layer may be implemented as a compound semiconductor. For example, the active layer may be implemented with at least one of Group 3-5 or Group 2-6 compound semiconductors. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers alternately disposed, In _x Al _y Ga _{1 -x- y} N (0≤x≤1 , 0≤y≤1, 0≤x+y≤1) may be arranged as a semiconductor material having a composition formula. For example, the active layer is selected from a group including InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, and InP/GaAs. may contain at least one.

The light emitting device 120 may be disposed on the package body 110 . The light emitting device 120 may be disposed on the first frame 111 and the second frame 113 . The light emitting device 120 may be disposed on the body 115 . The light emitting device 120 may be disposed within the cavity 102 provided by the package body 110 . The cavity 102 may be formed by the upper body 110A of the package body 110 . The upper body 110A may be disposed around the light emitting device 120 . The light emitting device 120 may be disposed within the cavity 102 . A first frame 111 , a second frame 113 , and a body 115 may be disposed on the bottom of the cavity 102 .

As shown in FIGS. 1 and 2 , a sub-cavity 133A may be formed on an inner surface adjacent to a third or fourth side surface among inner surfaces of the cavity 102 . Parts of the first and second frames 111 and 113 may be exposed at the bottom of the sub-cavity 133A. A first frame 111 and a second frame 113 are exposed in the sub-cavity 113A, and a protection element 125 is disposed on one of the exposed frames and is electrically connected to the other frame through a wire 126. can be connected A reflective resin 135 is disposed in the sub-cavity 133A, and the reflective resin 135 seals the protection element 125 and the wire 126 . The reflective resin 135 is formed of a resin material such as silicon or epoxy, and may include a high refractive filler therein.

The light emitting device 120 may be disposed on the first protrusion P1 of the first frame 111 and the second protrusion P2 of the second frame 113 . The protection device 125 may be disposed on the second frame 113 and electrically connected to the first frame 111 .

The first bonding part 121 and the second bonding part 122 may be spaced apart from each other based on the direction in which the body 115 is disposed on the lower surface of the light emitting device 120 . The first bonding part 121 may be disposed on the first frame 111 . The second bonding part 122 may be disposed on the second frame 113 .

In the light emitting device package 100 according to an embodiment of the present invention, power is connected to the first bonding part 121 of the light emitting device 120 through the first frame 111, and the second frame 113 Power may be connected to the second bonding portion 122 of the light emitting element 120 through the power supply. The first and second bonding parts 121 and 122 may be electrodes or pads. Accordingly, the light emitting element 120 can be driven by driving power supplied through the first bonding part 121 and the second bonding part 122 . In addition, light emitted from the light emitting device 120 may be provided in an upper direction of the package body 110 .

The first bonding part 121 may be disposed between the light emitting structure 123 and the first frame 111 . The second bonding part 122 may be disposed between the light emitting structure 123 and the second frame 113 . The first bonding part 121 and the second bonding part 122 may be made of a metal material. The first and second bonding parts 121 and 122 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO may be formed using one or more materials or alloys selected from the group consisting of a single layer or multiple layers.

The light emitting device 120 may include one or a plurality of light emitting cells therein. The light emitting cell may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected in series to each other within one light emitting device. Accordingly, the light emitting device may have one or a plurality of light emitting cells, and when n light emitting cells are disposed in one light emitting device, it may be driven with n times the driving voltage. For example, when the driving voltage of one light emitting cell is 3V and two light emitting cells are disposed in one light emitting device, each light emitting device can be driven with a driving voltage of 6V. Alternatively, when the driving voltage of one light emitting cell is 3V and three light emitting cells are disposed in one light emitting device, each light emitting device may be driven with a driving voltage of 9V. The number of light emitting cells disposed in the light emitting device may be 1 or 2 to 5.

The first bonding portion 121 of the light emitting device 120 may be disposed on the first protrusion P1 of the first frame 113, and the second bonding portion 122 may be disposed on the second protrusion P2. can be placed. In the body 115, the upper surface of the support portion P0 may be disposed higher than the upper surfaces of the first and second protrusions P1 and P2. The thickness (Pa) or height of the support portion (P0) is higher than the thickness (Pb) or height of the first and second protrusions (P1, P2) based on the flat upper surfaces of the first and second frames (111, 113). can be placed. The thickness Pa of the support portion P0 may be formed in a range of 50 micrometers or more, for example, 50 to 80 micrometers from the upper surfaces of the first and second frames 111 and 113 . When the thickness Pa of the support part P0 is smaller than the above range, it is difficult to secure the thickness of the conductive parts 127 and 129 without a height difference with the protruding parts P1 and P2, and when the thickness Pa of the support part P0 is larger than the above range, the light emitting element 120 may be tilted. There are possible problems.

An upper surface of the support part P0 may be disposed higher than lower surfaces of the first and second bonding parts 121 and 122 of the light emitting device 120 . Accordingly, since the support portion P0 supports the center-side lower portion of the light emitting device 120, the first and second bonding portions 121 and 122 of the light emitting device 120 form the first and second protruding portions P1. , P2) may be spaced apart from the upper surface. A height difference (Pc-Pb) between the support portion P0 and the protrusion portions P1 and P2 may be greater than or equal to 20 micrometers, for example, in the range of 20 to 50 micrometers. A height difference (Pc-Pb) between the support portion P0 and the protruding portions P1 and P2 may be equal to the thickness of the conductive portions 127 and 129 .

An embodiment of the present invention provides a predetermined gap between each of the bonding parts 121 and 122 of the light emitting device 120 and each of the protrusions P1 and P2, so that there is a gap between the bonding parts 121 and 122 and the protrusions P1 and P2. The thickness of the conductive parts 127 and 129 to be disposed may be secured to a certain level or more. Accordingly, it is possible to prevent a problem of cracks and degradation of electrical and thermal conductivity due to uneven thickness of the conductive parts 127 and 129 . Here, when the light emitting element 120 is pressed and mounted when there is no support part P0, the conductive parts 127 and 129 spread in the lateral direction and become thin or have an uneven distribution. In addition, when there is no support part P0, the space between the bonding parts 121 and 122 and the protruding parts P1 and P2 may be bonded without the conductive parts 127 and 129, so that electrical conductivity and thermal conductivity may be deteriorated. can

The conductive parts 127 and 129 are disposed between the first conductive part 127 between the first bonding part 121 and the first protruding part P1, and between the second bonding part 122 and the second protruding part P2. A second conductive portion 129 may be included. The first conductive part 127 may be disposed between the first frame 111 and the first bonding part 121 of the light emitting device 120 . The second conductive part 129 may be disposed between the second frame 113 and the second bonding part 122 of the light emitting element 120 . The first conductive part 127 may be bonded between the first protruding part P1 of the first frame 111 and the first bonding part 121 . The second conductive part 129 may be bonded between the second protruding part P2 of the second frame 113 and the second bonding part 113 . The conductive parts 127 and 129 may connect between the first frame 111 and the first bonding part 121 and between the second frame 113 and the second bonding part 122 .

The first and second conductive parts 127 and 129 may be bonded to the first and second bonding parts 127 and 129 in an upper region of the first and second protrusions P1 and P2, and some of the first and second protrusions 127 and 129 ( P1, P2) may be disposed on the lower periphery.

The conductive parts 127 and 129 may include one material selected from a group including Ag, Au, Pt, Sn, Cu, and the like, or an alloy thereof. At least one of the protruding parts P1 and P2 of the frames 111 and 113 and the bonding parts 121 and 122 may be bonded by an intermetallic compound layer by combining a material of the conductive parts 121 and 122 with a material constituting the bonding parts 121 and 122 . The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , wherein x satisfies the conditions of 0<x<1, y=1-x, x>y can

The bonding parts 121 and 122 of the light emitting element 120 are bonded to the material constituting the conductive parts 127 and 129 during the process of forming the conductive parts 127 and 129 or during the heat treatment process after the conductive parts 127 and 129 are provided, the conductive parts 127 and 129 are formed. An intermetallic compound (IMC) layer may be formed between the parts 127 and 129 and the frame 120 . For example, the conductive parts 127 and 129 may be formed using conductive paste. The conductive paste may include solder paste, silver paste, and the like, and may be composed of multiple layers composed of different materials or multiple layers or single layers composed of alloys. For example, the conductive parts 127 and 129 may include a Sn-Ag-Cu (SAC) material.

For example, an alloy layer may be formed by a combination between a material constituting the conductive parts 127 and 129 and a metal of the frames 111 and 113 . Accordingly, the conductive parts 127 and 129 and the frames 111 and 113 can be physically and electrically stably coupled. The conductive parts 127 and 129, the alloy layer, and the frame can be physically and electrically stably coupled. The alloy layer may include at least one intermetallic compound layer selected from a group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by combining a first material and a second material, the first material may be provided from the conductive parts 127 and 129, and the second material may be provided from the bonding parts 121 and 122 or the frames 111 and 113 ) can be provided.

The light emitting device package 100 may be supplied mounted on a submount or a circuit board. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high-temperature process such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in a bonding area between the lead frame provided in the light emitting device package and the light emitting device, so that stability of electrical connection and physical coupling may be weakened.

However, the first bonding part 121 and the second bonding part 122 of the light emitting device according to the embodiment may receive driving power through the protrusions P1 and P2 and the conductive parts 127 and 129 . Also, the melting point of the conductive parts 127 and 129 may be selected to have a higher melting point than that of other bonding materials. Therefore, even when the light emitting device device package 100 according to the embodiment is bonded to the main substrate through a reflow process, since a re-melting phenomenon does not occur, electrical connection and physical bonding strength are not deteriorated. There are advantages to not In addition, according to the light emitting device package 100 according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored due to exposure to high temperatures.

Accordingly, the range of selection for the material constituting the body 115 can be widened. According to the embodiment, the body 115 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic. For example, the body 115 includes at least one material selected from the group consisting of PolyPhtal Amide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, Epoxy Molding Compound (EMC) resin, and Silicone Molding Compound (SMC) resin. can do.

Meanwhile, referring to FIG. 6 , the height Pb of the protrusions P1 and P2 in the frames 111 and 1112 may be smaller than the thickness a of the frames 111 and 112 . The height Pb may be at least 10% of the thickness a, for example in a range of 10% to 50%. If the protruding height Pb of the first and second protruding portions P1 and P2 is smaller than the above range, the protruding height may be lowered, causing a problem that the conductive paste may ride up to the side of the light emitting element 120. If the range is exceeded, the rigidity of the frames 111 and 112 may decrease. The thickness (a) of the frames 111 and 112 may be 120 micrometers or more, for example, in the range of 120 to 300 micrometers or in the range of 200 to 270 micrometers. When the height Pb of the protrusions P1 and P2 is smaller than the above range, the thickness of the second resin 162 disposed around the lower circumference of the light emitting element 120 is reduced to less than 50 micrometers to function as a reflective resin. there is no problem Accordingly, when the height (Pb) of the protrusions (P1, P2) is formed within the above range, the thickness of the second resin 162 can be secured and provided as a white resin, thereby preventing a decrease in light reflection efficiency. have.

Here, the first and second protrusions P1 and P2 may include flat surfaces in their upper regions, and side surfaces P11 and P12 having inclined or curved surfaces may be disposed around them. An area of the entire area protruding from the first protruding portion P1 may be equal to or smaller than an area of the lower surface of the first bonding portion 121 . An area of the entire area protruding from the second protrusion part P2 may be equal to or smaller than the area of the lower surface of the second bonding part 122 . The area of the horizontal upper region of the first and second protrusions P1 and P2 may be greater than the area of the inclined side surfaces P11 and P12, so that the contact area of the bonding portion may be increased.

Upper surfaces of the first and second protrusions P1 and P2 may face the first and second bonding parts 121 and 121 . Side surfaces P11 and P12 , which are outer regions of the first and second protrusions P1 and P2 , may be spaced apart from the first and second bonding parts 121 and 122 . An area of a horizontal plane of an upper region of the first and second protrusions P1 and P2 may be smaller than an area of a lower surface of each bonding portion 121 and 122 .

According to the embodiment, as shown in FIG. 6, the width b of the upper region of the first and second protrusions P1 in the first direction is smaller than the width W2 of the first bonding part 121 or The same can be provided. A width of the upper region of the second protruding portion P2 in the first direction may be smaller than or equal to the width of the second bonding portion 122 . The width W2 of the first bonding portion 121 is 20% or more of the width of the light emitting device 120 in the first direction, and may be, for example, 20% to 40%.

8, the length b1 of the upper region of the first and second protrusions P1 and P2 in the second direction Y is greater than the length W3 of the first and second bonding parts 121 and 122. can be small The length W3 of the first bonding portion 121 is 70% or more of the length of the first light emitting device 120 in the second direction, and may be, for example, 70% to 95%.

The upper surface of the first and second protrusions P1 and P2 has a width b in the first direction X of 50% or more of the width W2 of the bonding parts 121 and 122, for example, in the range of 50% to 90%. When within the above range, reliability of thermal conductivity and electrical conductivity due to bonding between the first and second protruding portions P1 and P2 and the bonding portions 121 and 122 may be improved. The width (b) may be greater than or equal to 200 micrometers, for example, in the range of 200 to 300 micrometers. In addition, the supporting force (eg, DST) of the light emitting device 110 having the bonding parts 121 and 122 may be increased.

The first bonding portion 121 of the light emitting device 120 and the first protrusion P1 may be connected by a first conductive portion 127 . The second bonding portion 122 and the second protrusion P2 may be connected by a second conductive portion 129 . When the first and second bonding parts 121 and 122 are bonded to the first and second protrusions P1 and P2, the first and second conductive parts 127 and 129 are flat on the first and second protrusions P1 and P2. It is placed on the part, and the part flows to the side (P11, P12) located in the lower area. Accordingly, the first and second conductive parts 127 and 129 may be disposed on the side surfaces P11 and P2 of the first and second protruding parts P1 and P2, so that they may be further spaced apart from the lower surface of the light emitting element 120. . Accordingly, when the first and second conductive parts 127 and 129 are bonded in the bonding process of the light emitting element 120, the outside of the first and second conductive parts 127 and 129 can be moved in a downward direction, and thus the conductive parts 127 and 129 along the side of the light emitting element 120. ) can be prevented from moving, and the problem of absorbing light emitted from the side of the light emitting element 120 by the first and second conductive parts 127 and 129 or causing short-circuit defects to the semiconductor layer can be solved. .

The first and second frames 111 and 112 may be firmly attached by the first and second bonding parts 121 and 122 and the conductive parts 127 and 129 of the light emitting device 120 . A distance W5 from the edge of the upper region of the first and second protrusions P1 and P2 to the ends of the first and second bonding parts 121 and 122 may be 40 micrometers to 60 micrometers. When the distance W5 is greater than or equal to 40 micrometers, a process margin for the first and second bonding parts 121 and 122 to contact the upper surfaces of the first and second protrusions P1 and P2 may be secured, and manufacturing process The conductive paste serving as the first conductive parts 127 and 129 may not fall in a downward direction. When the distance W5 is 60 micrometers or less, it is possible to secure the area of the first and second bonding parts 121 and 122 exposed to the first and second protrusions P1 and P2, so that the Contact can improve reliability.

A distance W6 between the first and second bonding parts 121 and 122 and the side surface of the light emitting device 120 may be greater than or equal to 60 micrometers, for example, in the range of 60 to 90 micrometers. If the distance W6 is not secured, it is difficult to secure a distance from the conductive parts 127 and 129, and problems may occur due to the conductive paste. That is, when the distance (W5+W6) between the flat surface of the first and second bonding parts 121 and 122 and the side surface of the light emitting element 120 is at least 100 micrometers apart, the protruding parts P1 and P2 A safe distance can be secured by the conductive parts 127 and 129 around the .

The width b and the length b1 of the upper region of the first protrusion P1 may be smaller than the width and length of the lower region of the first protrusion P1. The width and length of the upper region of the second protrusion P2 may be smaller than the width and length of the lower region of the second protrusion P2. When the width and length of the upper region of the first and second protrusions P1 and P2 are greater than the width and length of the lower region of the first and second protrusions P1 and P2, the strength of the protruding portion is reduced or protruded. The thickness of the inclination part may be thin or it may be difficult to mold.

The first and second protrusions P1 and P2 may be provided in an inclined shape in which a width gradually decreases from a lower area to an upper area by the side surfaces P11 and P12. The top view of the first and second protrusions P1 and P2 may have a polygonal shape, an elliptical shape, or a circular shape. The cross-sectional shape of the side of the first and second protrusions P1 and P2 may be a polygonal shape, a hemispherical shape, or a semi-elliptical shape. The side surfaces P11 and P12 may have a plurality of inclined surfaces having different inclinations or may be disposed as curved surfaces having different curvatures.

The distance between the first protrusion P1 and the second protrusion P2 in the lower surface area of the first frame 111 and the second frame 112 is, for example, 100 or more, for example, 100 to 150 micrometers. can be provided as

The distance between the first protrusion P1 and the second protrusion P2 in the lower surface area of the first frame 111 and the second frame 112 is the light emitting device package 100 according to the embodiment When mounted later on a circuit board, submount, etc., it may be selected to be provided at a certain distance or more in order to prevent an electrical short between pads from occurring.

Meanwhile, as shown in FIGS. 6 and 7 , when the protrusions P1 and P2 are disposed adjacent to the body 113 disposed between the first and second frames 111 and 113, the protrusions P1 and P2 As a result, a phenomenon in which the frames 111 and 112 are rolled or wound in the body-side direction may occur. This winding of the frame may deteriorate the reliability of the package process. Accordingly, the distance c between the edges of the protrusions P1 and P2 and the body 113 may be 120 micrometers or more, for example, in the range of 120 to 300 micrometers or in the range of 200 to 270 micrometers. The ratio (c:a) of the distance c and the thickness a of the frames 111 and 112 may range from 0.8:1 to 1:0.8, for example, the distance c and the thickness a may be the same and a ratio of 1:1 ( c:a). The ratio of the width b of the upper region of the protrusions P1 and P2 to the thickness a of the frames 111 and 112 is 0.8: 1 to 1: 0.8, or the width b and the thickness a may be the same, and the ratio of 1: 1 ( b:a). The ratio (b:c) of the width b of the upper region of the protrusions P1 and P2 and the distance c to the body 113 may be 0.8:1 to 1:0.8 or 1:1. This ratio is based on the thickness (a) of the frames 111 and 112, the width (b) of the upper region of the protrusions (P1, P2) and the distance (c) between the protrusions (P1, P2) and the body are 80% to 120%. Therefore, for example, in the case of the width b of the upper region of the protrusions P1 and P2, the distance c from the body 113, and the thickness a of the frames 111 and 112, b:c:a is 1:1:1 can include When the protrusions P1 and P2 are formed on the frames 111 and 112, the problem of the frames 111 and 112 being rolled or wound by the protrusions P1 and P2 can be prevented, and the bonding parts 121 and 122 The flat areas of the protrusions P1 and P2 may be provided within a range in which thermal conductivity and electrical conductivity are not deteriorated.

The protruding parts P1 and P2 of the frames 111 and 112 according to the embodiment have externally inclined side surfaces P11 and P12 and are overlapped with the light emitting device 120 in the vertical direction and disposed within the area of each bonding part 121 and 122. Therefore, when forming the conductive parts 127 and 129, it is possible to prevent the paste of the conductive parts 127 and 129 from riding up to the side of the light emitting element 120. In addition, by separating the conductive parts 127 and 129 from the side of the light emitting element 120, when the second resin 162 is formed, the second resin 162 can extend to the lower part of the light emitting element 120, thereby emitting light. Light reflection efficiency at the lower part and outside of the element 120 may be improved.

In addition, since a separate half-etching process is not performed on the top of the frames 111 and 112, the process can be simplified, and the protrusion can be provided by the frame mold, thereby reducing the unit cost of the frame and the price of the package. Therefore, the reliability of the light emitting device package can be improved.

The light emitting device package according to the embodiment of the present invention may include one or a plurality of recesses in the bottom of the cavity 102 or the body 115 . The recess may be disposed in the support portion P0 of the body 115 . The recess may include first and second recesses R1 and R2. The first and second recesses R1 and R2 may be spaced apart from each other. The first and second recesses R1 and R2 may be disposed in the second direction. The first and second recesses R1 and R2 may be disposed between the first frame 311 and the second frame 312 . The first and second recesses R1 and R2 may be disposed on the upper portion of the body 115 disposed between the first frame 111 and the second frame 113 or on the support portion P0.

The first and second recesses R1 and R2 may be provided concavely in a direction from the upper surface of the body 115 to the lower surface. One or a plurality of the first and second recesses R1 and R2 may be disposed below the light emitting device 120 . At least some or all of the first and second recesses R1 and R2 may be overlapped with the light emitting device 120 in the Z direction. Since the first and second recesses R1 and R2 are disposed on the body 115, the first resin 160 may be disposed within the first and second recesses R1 and R2. . The first resin 160 disposed in the first and second recesses R1 and R2 may function as a support protrusion.

According to an embodiment of the present invention, the depth of the first and second recesses R1 and R2 may be provided smaller than the thickness of the first frame 111 or the thickness of the second frame 113 . The depths of the recesses R1 and R2 may be determined in consideration of the adhesive strength of the first resin 160 . In addition, the depth of the recesses R1 and R2 may be determined in consideration of the stable strength of the body 115 and/or to prevent cracks in the conductive part from occurring due to heat emitted from the light emitting element 120. have.

Referring to FIG. 7 , depths of the first and second recesses R1 and R2 may be smaller than the thickness Pa of the support portion P0 . The distance Pr from the bottom of the support part P0 to the recesses R1 and R2 may be 15 micrometers or more, for example, in the range of 15 to 40 micrometers. Due to the separation distance Pr, a decrease in rigidity of the support part P0 can be prevented in the region where the recesses R1 and R2 are formed in the support part P0. The support portion P0 may be connected to the first reflective wall 134 of the cavity 102 to prevent external rigidity from being lowered. That is, the length of the upper surface of the support part P0 in the second direction may be greater than the length of the bottom of the cavity 102 in the second direction.

The first and second recesses R1 and R2 may provide an appropriate space in which a kind of underfill process can be performed under the light emitting device 120 . Here, the under fill process may be a process of mounting the light emitting device 120 on the package body 110 and disposing the first resin 160 below the light emitting device 120, In the process of mounting the device 120 on the package body 110, in order to mount the device 120 through the first resin 160, after disposing the first resin 160 in the recesses R1 and R2, the light emitting device It may be a process of attaching (120). The recesses R1 and R2 may be provided with a first depth or greater so that the first resin 160 can be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 115 . The recesses R1 and R2 may be provided with a second depth or less to provide stable strength of the body 115 . The depth of the recesses R1 and R2 may be 300 micrometers or less, for example, in the range of 15 to 300 micrometers. If the depth is less than the above range, the resin bearing capacity may decrease, and if the depth is greater than the above range, the rigidity of the body 115 may decrease. It may be lowered, the improvement of the bearing capacity may be insignificant, and light leakage through the body 115 may be caused.

Referring to FIG. 3 , the first and second recesses R1 and R2 include inner portions overlapping the light emitting device 120 and outer portions protruding outward from one side or the other side of the light emitting device 120 . can do. One side and the other side of the light emitting device 120 may be both sides or long sides in the second direction. The length of the inner part of the first and second recesses R1 and R2 in the second direction is 40 micrometers or more, for example, in the range of 40 to 60 micrometers, and the first and second recesses R1 and R2 are arranged in a range of 40 to 60 micrometers. One resin 160 can provide an area that can function as an adhesive. The length ratio of the inner part and the outer part of the first and second recesses R1 and R2 may be in the range of 4:6 to 6:4. Since the outer portions of the recesses R1 and R2 are disposed in areas that do not overlap with the light emitting device 120 in a vertical direction, light loss at a lower portion of the light emitting device 120 may be reduced. As another example, the body 115 may include a recess having a length ranging from 40% to 120% of the length of the light emitting device 120 in the second direction. In this case, the recess extends in the first direction. By mitigating the thermal deformation of the conductive paste, it is possible to suppress cracks in the same material.

External portions of the first and second recesses R1 and R2 may be spaced apart from the first reflective wall 134 of the cavity 102 . When the first and second recesses R1 and R2 are connected to the first reflective wall 134, a problem in that the first resin 160 moves to the first reflective wall 134 may occur. can

Since the outer portions of the first and second recesses R1 and R2 are disposed outside the light emitting device 120 , a problem of voids occurring when the first and second recesses R1 and R2 are disposed below the light emitting device 120 can be reduced. Therefore, the light emitting element 120 is adhered to the support portion P0 of the body 115 by providing the first resin 160 as an adhesive member on the plurality of recesses R1 and R2 and the support portion P0. , The support force of the light emitting element 120 can be strengthened.

As shown in FIG. 7 , the first and second recesses R1 and R2 may be disposed higher than upper surfaces of the first and second frames 111 and 112 . Lower portions of the first and second recesses R1 and R2 may be disposed higher than upper surfaces of the first and second frames 111 and 112 .

Widths of the recesses R1 and R2 in the first direction may be smaller than that of the support portion P0 . Widths of the recesses R1 and R2 in the first direction may be smaller than the distance between the first and second frames 111 and 113 . The length of each of the recesses R1 and R2 in the second direction is smaller than the length of the light emitting element 120 in the second direction, so that the first resin 160 is supported under the light emitting element 120. It can function as a protrusion. As the recesses R1 and R2 are disposed long in the second direction, adhesion to the light emitting device 120 may be strengthened. Lengths of the recesses R1 and R2 in the second direction may be greater than widths of the recesses R1 and R2 in the first direction.

The top view of the recesses R1 and R2 may have a polygonal shape, for example, a triangular, quadrangular, or pentagonal shape. As another example, the recesses R1 and R2 may have a circular shape or an elliptical shape, and may be provided in a shape capable of guiding the first resin 160 . The recesses R1 and R2 may have polygonal or curved side cross-sectional shapes, such as triangular, quadrangular or hemispherical shapes. The structure of the recesses R1 and R2 may be provided with a structure that does not reduce the bearing capacity while reducing the impact on the body 115 .

An upper width of the recesses R1 and R2 may be wider than a lower width in the first direction. An upper width of the recesses R1 and R2 may be wider than a lower width in the first and second directions. The recesses R1 and R2 may be formed in a shape in which an upper width is wider than a lower width in the first direction. Since the recesses R1 and R2 have a polygonal shape and have an upper width wider than a lower width, the inside may be provided as an inclined surface. Accordingly, the first resin 160 may be guided and supported in the recesses R1 and R2.

The first resin 160 may be adhered to the light emitting element 120 and the body 115 . The first resin 160 may be disposed between the first bonding part 121 and the second bonding part 122 of the light emitting device 120 or may come into contact with the first and second bonding parts 121 and 122 . . The first resin 160 may be adhered to a region between the lower surface of the light emitting device 120 and the support portion P0 of the body 115 . Accordingly, the first resin 160 may reinforce the lower adhesive force and supporting force of the light emitting element 120 . In a process of bonding the bonding parts 121 and 122 of the light emitting element 120 or when bonding on a circuit board, a problem in which the light emitting element 120 is tilted by the conductive parts 127 and 129 can be prevented. The first resin 160 may be formed of a reflective resin material to diffuse light and improve reflection efficiency.

At least some or all of the first and second recesses R1 and R2 may be overlapped with the light emitting device 120 in the Z direction. Since the first and second recesses R1 and R2 are disposed on the body 115, the first resin 160 may be disposed within the first and second recesses R1 and R2. . The first resin 160 disposed in the first and second recesses R1 and R2 may function as a support protrusion. The first resin 160 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The first resin 160 may provide a stable fixing force between the light emitting device 120 and the body 115 . For example, the first resin 160 directly contacts the upper surface of the body 115, is disposed in the first and second recesses R1 and R2, and contacts the lower surface of the light emitting element 120. Thus, the light emitting device 120 can be fixed.

Referring to FIGS. 7 and 9 (a) , the light emitting device package 100 according to the embodiment may include a first resin 160 . The first resin 160 may be disposed between the support portion P0 of the body 115 and the light emitting element 120 . The first resin 160 may be disposed between the upper surface of the body 115 and the lower surface of the light emitting element 120 . The first resin 160 may be disposed between the first bonding part 121 and the second bonding part 122 . The first resin 160 may be disposed between the first protrusion part P1 and the second protrusion part P2. For example, the first resin 160 is in contact with the side surfaces of the first bonding part 121 and the second bonding part 122, and the first protrusion part P1 and the second protrusion part P2 It may correspond to or contact the inside of. The thickness of the first resin 160 may be greater than the height Pb or thickness of the protrusions P1 and P2, so that it may come into contact with the light emitting element 120.

The first resin 160 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The first resin 160 may be an adhesive. The first resin 160 may provide a stable fixing force between the light emitting device 120 and the body 115 . For example, the first resin 160 may be placed in direct contact with the upper surface of the support portion P0 of the body 115 . In addition, the first resin 160 may be placed in direct contact with the lower surface of the light emitting device 120 . For example, the first resin 160 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. can Also, as an example, when the first resin 160 includes a reflective function, the first resin may include white silicone. The material of the first resin 160 may be made of a material that functions to radiate heat from the light emitting element 120 .

The first resin 160 can provide a stable fixing force between the support portion P0 of the body 115 and the light emitting element 120, and when light is emitted to the lower surface of the light emitting element 120, the A light diffusing function may be provided between the light emitting element 120 and the body 115 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the first resin 160 provides a light diffusing function, thereby improving light extraction efficiency of the light emitting device package 100. have. In addition, the first resin 160 may reflect light emitted from the light emitting device 120 . When the first resin 160 has a reflective function, the first resin 160 may include a filler, for example, TiO ₂ , SiO ₂ , or Al ₂ O ₃ .

Referring to FIGS. 4 to 8 and FIG. 9(b) , the light emitting device package 100 according to an embodiment of the present invention may include a second resin 162 . For reference, in FIG. 1 , the second resin 162 and the molding can be clearly displayed in the arrangement relationship of the first frame 111, the second frame 113, and the body 115. Part 140 is not shown. The second resin 162 may be formed by a process of dispensing after disposing the light emitting device 120 .

The second resin 162 may be disposed between the first frame 111 and the lower portion of the light emitting device 120 . The second resin 162 may be disposed between the second frame 113 and the lower portion of the light emitting device 120 . The second resin 162 may be provided on the bottom surface of the cavity 102 provided in the package body 110 . The second resin 162 may be disposed on side surfaces of the first bonding part 121 and the second bonding part 122 . The second resin 162 may contact the lower surface of the light emitting device 120 . The thickness of the second resin 162 may be greater than the height Pb or thickness of the protrusions P1 and P2, so that it may come into contact with the light emitting element 120.

The second resin 162 may be disposed around the lower portion of the light emitting device 120 . The second resin 162 may be connected to or contact the first resin 160 . A part of the upper surface of the second resin 162 may be disposed lower than the lower surface of the light emitting device 120 . A thickness of the second resin 162 may be equal to or less than a distance (eg, d) between the lower surface of the light emitting device 120 and the upper surface of the frames 111 and 113 . The second resin 162 may surround or contact the outside of the bonding parts 121 and 122 . The second resin 162 may surround or contact the outside of the protrusions P1 and P2.

The first resin 160 and the second resin 162 may contact the outside of the conductive parts 127 and 129 disposed on the side surfaces P11 and P12 of the protruding parts P1 and P2. The second resin 162 may surround or contact the outside of the conductive parts 127 and 129 . The second resin 162 may seal the surfaces of the conductive parts 127 and 129 and contact the lower surface of the light emitting element 120 to protect the light emitting element 120 from the conductive parts 127 and 129 . Accordingly, even if the conductive parts 127 and 129 are remelted, the second resin 162 can be prevented from flowing to other regions.

The second resin 162 may include a filler, a metal oxide, or a high refractive index material in a transparent resin. The second resin 162 may include a filler, for example, TiO ₂ , SiO ₂ , or Al ₂ O ₃ therein. In the embodiment of the present invention, when a process of accelerating the sedimentation of the fillers added to the second resin 162 is performed, the fillers added to the second resin 162 may be precipitated in the bottom direction. Here, the process of accelerating the precipitation phenomenon may include a process of accelerating using a centrifugal separator. As shown in FIG. 6 , the second resin 162 can ride up on the first reflective wall 134 of the cavity 102 and be placed higher than the top surface of other regions.

Here, as shown in FIG. 10, when dispensing the first resin 162 with the dispensing equipment 195 through the boundary Sc between the side surface 132 of the cavity 102 and the first reflective wall 134, Since the first reflective wall 134 is separated from the light emitting device 120 by a predetermined distance, for example, 250 micrometers or more, the device 195 may be inserted. That is, by spacing the distance between the side surface of the light emitting element 120 and the boundary portion Sc in the range of 250 micrometers, for example, 250 to 450 micrometers and making the angle of the first reflective wall 134 larger, the equipment ( 195) and injection of the second resin 162 may be easily performed. The height of the boundary portion Sc extends to 1/2 of the thickness of the light emitting element 120 or a point between the upper and lower surfaces of the substrate, so that the angle of inclination of the first reflective wall 134 can be secured. A point up to 1/2 of the light emitting element 120 may be within a range of 200 micrometers or less, for example, 120 to 200 micrometers from the upper surfaces of the frames 111 and 113 .

The second resin 162 may be disposed under the light emitting element 120 to perform a sealing function. In addition, the second resin 162 may improve adhesion between the light emitting device 120 and the first frame 111 . The second resin 162 can improve adhesion between the light emitting element 120 and the second frame 113 and adhere closely to the molding part 190, thereby suppressing moisture permeation.

In addition, when the second resin 162 includes a material having a reflective property such as white silicon, the second resin 162 transmits the light provided from the light emitting device 120 to the package body 110. Light extraction efficiency of the light emitting device package 100 may be improved by reflecting the light in an upward direction. The second resin 162 and the first resin 160 may be formed of the same material. The second resin 162 may be disposed around the bonding parts 121 and 122 of the light emitting element 120 and prevent the diffusion of the conductive part, thereby serving as a dam of the conductive part.

Meanwhile, according to another example of the light emitting device package according to the embodiment of the present invention, the second resin 162 is not separately provided, and the molding part 140 is the first frame 111 and the second frame. It may also be arranged to directly contact 113.

Each of the frames 111 and 113 and each of the bonding parts 121 and 122 may be coupled by an intermetallic compound layer. The first and second protrusions P1 and P2 of the respective frames 111 and 113 and the respective bonding portions 121 and 122 may be coupled by an intermetallic compound layer. The intermetallic compound layer may include a material constituting the conductive parts 127 and 129 . The conductive parts 127 and 129 disposed on the first protruding part P1 of the first frame 111 and the second protruding part P2 of the second frame 113 are the first and second bonding parts 121 and 122. It may be placed in direct contact with the lower surface and electrically connected to the first and second bonding parts 121 and 122 .

The conductive parts 127 and 129 may include one material selected from a group including Ag, Au, Pt, Sn, Cu, Zn, In, Bi, contact, Ti, and the like, or an alloy thereof. The conductive parts 127 and 129 are solder paste and may be formed by mixing powder particles or particle particles and flux. The solder paste may include Sn-Ag-Cu, and the weight % of each metal may vary. The conductive parts 127 and 129 may include SAC (Sn-Ag-Cu) or SAC-based materials.

For example, the conductive parts 127 and 129 may be formed using conductive paste. The conductive paste may include solder paste, silver paste, and the like, and may be composed of multiple layers composed of different materials or multiple layers or single layers composed of alloys.

The bonding parts 121 and 122 of the light emitting element 120 are bonded to the material constituting the conductive parts 127 and 129 in the process of forming the conductive parts 127 and 129 or in the process of heat treatment after the conductive parts 127 and 129 are provided. An intermetallic compound (IMC) layer may be formed between the parts 127 and 129 and the frames 111 and 113 .

Here, an alloy layer may be formed by a combination between a material constituting the conductive parts 127 and 129 and a metal of the frames 111 and 113 . Accordingly, the conductive parts 127 and 129 and the frames 111 and 113 can be physically and electrically stably coupled. The conductive parts 127 and 129, the alloy layer, and the frame can be physically and electrically stably coupled. The alloy layer may include at least one intermetallic compound layer selected from a group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by combining a first material and a second material, the first material may be provided from the conductive parts 127 and 129, and the second material may be provided from the bonding parts 121 and 122 or the frames 111 and 113 ) can be provided.

When the conductive parts 127 and 129 include a Sn material and the metal layer includes an Ag material, AgSn metal is formed by combining the Sn material and the Ag material during the process of providing the conductive parts 127 and 129 or in the heat treatment process after providing the conductive parts 127 and 129 . A liver compound layer may be formed.

Alternatively, when the conductive parts 127 and 129 include a Sn material and the metal layer includes an Au material, AuSn is formed by a combination of the Sn material and the Au material during the process of providing the conductive parts 127 and 129 or the heat treatment process after providing the conductive parts 127 and 129. An intermetallic compound layer of may be formed.

Alternatively, when the conductive parts 127 and 129 include a Sn material and the metal layers of the frames 111 and 113 include a Cu material, the Sn material and the Cu material in the process of providing the conductive parts 127 and 129 or in the heat treatment process after being provided. An intermetallic compound layer of CuSn may be formed by the combination of.

Alternatively, when the conductive parts 127 and 129 include an Ag material and the metal layer or some layers of the frames 111 and 113 include a Sn material, during the process of providing the conductive parts 127 and 129 or a heat treatment process after providing the Ag material An intermetallic compound layer of AgSn may be formed by the combination of and Sn material.

The intermetallic compound layer described above may have a higher melting point than other bonding materials. In addition, the heat treatment process for forming the metallic compound layer may be performed at a lower temperature than the melting point of a general bonding material. Therefore, since the re-melting phenomenon does not occur even when the light emitting device package 100 according to the embodiment is bonded to the main substrate through a reflow process, electrical connection and physical bonding strength are not deteriorated. There are advantages.

According to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, the package body does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body from being damaged or discolored due to exposure to high temperatures. Accordingly, the range of selection for the material constituting the body 115 can be widened. According to the embodiment, the body 115 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic.

When the frames 111 and 113 have a multilayer structure including a base layer and a plating layer on a surface of the base layer, an alloy layer may be formed between the conductive parts 127 and 129 and at least one layer of the frames 111 and 113. The alloy layer may be formed by bonding between a material constituting the conductive parts 127 and 129 and a metal layer of the frames 111 and 113 . The alloy layer may be formed on surfaces of the frames 111 and 113 . The alloy layer may include an intermetallic compound layer having at least one selected from a group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by combining a first material and a second material, the first material may be provided from the conductive parts 127 and 129, and the second material may be the metal layer or the base of the frames 111 and 113. It can be provided from layers.

When the first and second frames 111 and 113 are made of a conductive material, the first and second frames 111 and 113 may be electrically connected to the bonding parts 121 and 122 of the light emitting device 120 . The bonding parts 121 and 122 of the light emitting device 120 may be electrically connected to at least one or all of the conductive parts 127 and 129 and the frames 111 and 113 . Accordingly, the light emitting element 120 can be driven by driving power supplied through the first bonding part 121 and the second bonding part 122 . In addition, light emitted from the light emitting device 120 may be provided in an upper direction of the package body 110 .

The light emitting device package 100 according to an embodiment of the present invention may include a molding part 190 . The molding part 190 may be provided on the light emitting device 120 . The molding part 190 may be disposed on the first frame 111 and the second frame 113 . The molding part 190 may be disposed in the cavity 102 provided by the package body 110 .

The molding part 190 may include an insulating material. In addition, the molding part 190 may include a wavelength conversion means for receiving light emitted from the light emitting device 120 and providing wavelength-converted light. For example, the molding part 190 may be formed of at least one material selected from a group including phosphors and quantum dots. The light emitting device 120 may emit blue, green, red, white, infrared or ultraviolet light. The phosphor or quantum dot may emit blue, green, or red light. The molding part 190 may not be formed.

The light emitting device package 100 may be supplied mounted on a submount or a circuit board. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high-temperature process such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in a bonding area between the lead frame provided in the light emitting device package and the light emitting device, so that stability of electrical connection and physical coupling may be weakened.

The first bonding unit 121 and the second bonding unit 122 of the light emitting device according to an embodiment of the present invention may receive driving power through at least one or both of the frames 111 and 113 and the conductive units 127 and 129. . Also, the melting point of the conductive parts 127 and 129 may be selected to have a higher melting point than that of other bonding materials. Therefore, since the re-melting phenomenon does not occur even when the light emitting device device package 100 according to the embodiment of the present invention is bonded to the main substrate through a reflow process, electrical connection and physical bonding force are improved. It has the advantage of not deteriorating. In addition, according to the light emitting device package 100 according to the embodiment of the present invention, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to an embodiment of the present invention, it is possible to prevent the package body 110 from being damaged or discolored due to exposure to high temperatures.

Accordingly, the range of selection for the material constituting the body 115 can be widened. According to an embodiment of the present invention, the body 115 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic. For example, the body 115 includes at least one material selected from the group consisting of PolyPhtal Amide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, Epoxy Molding Compound (EMC) resin, and Silicone Molding Compound (SMC) resin. can do.

In the light emitting device package according to the embodiment of the present invention, since the first reflective wall 134 of the cavity 102 is disposed adjacent to the circumference of the light emitting device 120, the light emitting device 120 and the cavity 102 A separate reflective resin may not be formed between the side surfaces of the. Due to the area reduction of the frames 111 and 113, thermal deformation caused by the frames can be reduced and generation of cracks in the conductive parts 127 and 129 can be suppressed.

FIG. 11 is another example of FIG. 9 , and reference is made to the above description for the same components as those disclosed above.

Referring to FIG. 11 , a support portion P0 of the body, a plurality of protrusions P1 and P2 , and a plurality of spacers Ps1 may be disposed at the bottom of the cavity 102 .

The light emitting device package may include a spacer Ps1. The spacer Ps1 may space the light emitting device 120 apart from the upper surfaces of the frames 111 and 113 . The plurality of spacers Ps1 may separate the first and second bonding parts 121 and 122 of the light emitting device 120 from the upper surfaces of the first and second frames 111 and 113 . Upper surfaces of the plurality of spacers Ps1 may protrude higher than lower surfaces of the first and second bonding parts 121 and 122 .

The spacer Ps1 may be disposed at the same height as the support part P0 or may be disposed at a lower height. The spacer Ps1 may support an outer portion of the light emitting device 120 .

A portion of the plurality of spacers Ps1 may overlap the light emitting device 120 in a vertical direction. The spacer Ps1 may be disposed below each corner of the light emitting device 120 and may correspond to the corners of the first and second bonding parts 121 and 122 .

The spacer Ps1 may be disposed on the edge of the lower surface of the light emitting device 120 or may overlap with the edge in a vertical direction. The spacer Ps1 may be a material constituting the body 115 or the same material as the body 115 . As another example, the spacer Ps1 may be formed of a material constituting the frames 111 and 113 or the same material as the frames 111 and 113 . The number of spacers Ps1 may be 3 or more or 4 or more. The spacer Ps1 provides a gap between the light emitting device 120 and the upper surfaces of the frames 111 and 113, and is placed between the bonding parts 121 and 122 of the light emitting device 120 and the upper surfaces of the frames 111 and 113 in the manufacturing process. It is possible to prevent a problem that the light emitting device 120 is tilted by the liquid conductive part. The spacer Ps1 is disposed outside the first and second protrusions P1 and P2 to reduce the spread of the conductive parts 127 and 129 disclosed in the above embodiment due to the pressure applied from the light emitting element 120. have. A space between the light emitting element 120 and the frames 1111 and 113 is provided by the spacer Ps1, so that a space in which the conductive part is placed or a uniform thickness of the conductive part can be secured. Accordingly, a decrease in the thickness of the conductive portion disposed under the light emitting element 120 can be suppressed, and cracks in the conductive portion can be prevented, thereby preventing a decrease in electrical reliability. In addition, the diffusion path of the conductive part can be restricted by the support part P0 serving as a dam around it and the second resin, thereby reducing problems caused by the spread of the conductive part being remelted. The spacer Ps1 may separate the light emitting device 120 from the upper surface of the frame to provide a space to facilitate an undo filling process.

<Second Embodiment>

12 to 16 are examples of the light emitting device package according to the second embodiment, FIG. 12 is a perspective view of the light emitting device package, FIG. 13 is a plan view of FIG. 12 , and FIG. 14 is a recess in the light emitting device package of FIG. 12 . , FIG. 15 is a view showing an example of phosphor deposition in the molding part in FIG. 14 , and FIG. 16 is a cross-sectional view of the light emitting device package of FIG. 12 on the E-E side. Here, FIG. 14 is a view showing a cross-section in which the D-D side cross-section of FIG. 12 passes through the protrusions and recesses of the light emitting element. In describing the second embodiment, reference will be made to the above-disclosed embodiments or descriptions of other examples. The configuration disclosed above may be selectively applied to the second embodiment.

12 to 16, the light emitting device package 100A includes a package body 110 having a plurality of frames 111 and 113 and a body 115, an upper body 110A having a cavity 102, and the A light emitting device 120 may be included in the cavity 102 . The protruding parts P1 and P2 of the frames 111 and 113 and the support part P0 of the body 115 refer to the configuration disclosed above. In an embodiment of the present invention, the recesses R1 and R2 and the first resin 160 are disposed in the support part P0 of the body 115, so that the light emitting element 120 can be attached to the support part P0. .

As shown in FIGS. 13 and 14 , a first reflective wall and a second reflective wall may be included below the side surface 132 of the cavity 102 . The first reflective wall may have a flat top surface and may extend from the inclined side surface 132 toward the light emitting device 120 . The second reflective wall may have a flat upper surface from the first reflective wall and may extend toward the light emitting device 120 . By disposing the first and second reflective walls 134 and 136 adjacent to the light emitting element 120 below the side surface 132 of the cavity 102, the process of disposing the second resin can be reduced and light reflection by the body material can be reduced. Efficiency can be improved. That is, since the second reflective wall 136 made of the same reflective resin material as the body extends to an area adjacent to the light emitting element 120 and covers the lower circumference of the light emitting element 120, the lower part of the light emitting element 120 Light loss at the periphery can be reduced.

As shown in FIG. 15, the first reflective wall 134 has a flat upper surface, and when the phosphor 191 added to the molding part 190 is precipitated, the phosphor 191 is accumulated on the flat upper surface. The phosphor 191 may move to the area 103 around the light emitting device 120 . In this case, since the angle of inclination of the side surface 132 of the cavity 102 is greater than that of a structure without the first reflective wall 134, the phosphor 191 can be moved to the peripheral area 103. have.

The phosphor 191 may be distributed on the surface of the first reflective wall 134 . The second reflective wall 136 may have a flat upper surface, and phosphors 191 may be distributed on the surface. The phosphor 191 disposed on the surfaces of the first and second reflective walls 134 and 136 is distributed in a larger amount in the peripheral area 103 of the light emitting device 120, and the peripheral area of the light emitting device 120 ( The wavelength conversion efficiency in 103) can be improved. This is because the active layer of the light emitting device 120 disposed in the flip chip form is located in an area adjacent to the frames 111 and 113, that is, an area more adjacent to the frames 111 and 113 than the substrate 120, so that the light emitting device 120 is disposed in the lateral direction through the active layer. Light greater than a predetermined amount of light is emitted. These side lights may be reflected or wavelength-converted and emitted toward the surface of the molding part 190 or the upper direction of the cavity 102, but when the surfaces of the frames 111 and 113 are discolored, the light flux may decrease. can

An embodiment of the present invention extends the first and second reflective walls 134 and 136 and increases the distribution amount of the phosphor 191 in order to reduce the exposed area of the frames 111 and 113 in the area 103 surrounding the light emitting device 120 can do it

The height Ta of the top surface of the first reflective wall 134 is disposed up to 1/2 the height of the side surface of the light emitting element 120 or a point between the upper and lower surfaces of the substrate 124, so that the light emitting element 120 ) may be opposed to the light emitting structure 123. Accordingly, wavelength conversion efficiency of the phosphors 191 disposed on the first reflective wall 134 may be increased by light emitted from the side of the light emitting device 120 . The upper surface height Ta of the first reflective wall 134 may be disposed in a range of 200 micrometers or less, for example, 120 to 200 micrometers. If the angle of inclination of the side surface 132 is small, the function of guiding the phosphor 191 to the peripheral area 103 may deteriorate.

The boundary between the first reflective wall 134 and the side surface 132 is arranged so that the distance from the side surface of the light emitting element 120 is 650 micrometers or less, for example, in the range of 400 to 650 micrometers, so that the side surface 132 ) can increase the inclination angle of

An area or width of the upper surface of the first reflective wall 134 may be greater than an area or width of the upper surface of the second reflective wall 136 . A top surface height Tb of the second reflecting wall 136 may be smaller than a top surface height Ta of the first reflecting wall 134 . The second reflective wall 136 may be disposed closer to the light emitting device 120 than the first reflective wall 134 and may be disposed at a lower height. Accordingly, the second reflective wall 136 extends in the direction of the first and second protrusions P1 and P2 lower than the lower surface of the light emitting device 120 (excluding the bonding portion), so that the exposed areas of the frames 111 and 113 are exposed. can reduce

The distance Ga between the first reflective wall 134 and the side surface of the light emitting device 120 may be 300 micrometers or less, for example, 150 to 300 micrometers. The distance Gb of the second reflective wall 135 from the side surface of the light emitting device 120 may be 80 micrometers or more, for example, 80 to 120 micrometers. The difference between the gaps Ga and Gb may be arranged in a range of 70 micrometers or more, for example, 70 to 120 micrometers. This is because the second reflective wall 136 has a width of 70 to 120 micrometers and extends from the first reflective wall 134 in the direction of the first and second protrusions P1 and P2, so that the upper surfaces of the frames 111 and 113 By reducing the exposure area of the frame (111, 113) it is possible to prevent a decrease in light flux due to discoloration. The above intervals Ga and Gb are examples based on the first direction, and the second direction may be equal to or smaller than the interval in the first direction.

The height Tb of the second reflective wall 136 may be disposed in a range of 70 micrometers or less, for example, 30 to 70 micrometers. If the height Tb of the second reflective wall 136 is smaller than the above range, the shape of the second reflective wall 136 is not maintained and molding is difficult. The phosphor induction ratio may be lowered without a difference and the light reflection efficiency may be lowered.

A height Tb of the second reflective wall 136 may be disposed lower than a lower surface of the light emitting device 120 . The height Tb of the second reflective wall 136 may be equal to or higher than the height or thickness Pb of the first and second protrusions P1 and P2 disclosed in the exemplary embodiment. This provides the height Tb of the second reflective wall 136 to a predetermined thickness or more, thereby improving light reflection efficiency and preventing deterioration of adhesion with the frames 111 and 113. Inner surfaces of the first and second reflecting walls 134 and 136 may include inclined surfaces or curved surfaces.

In the second embodiment of the invention, the first and second reflecting walls 134 and 136 having a multi-step structure are installed on the lower circumference of the light emitting element 120 and on the side surface of the cavity 102 as the light emitting element 120 or the protruding portion P1, It is placed adjacent to P2). Accordingly, it is possible to reduce the area of the upper surface of the frames 111 and 113 exposed to the bottom of the cavity, to prevent a decrease in light flux due to discoloration of the surface of the frame, and to improve the wavelength conversion efficiency by increasing the distribution of phosphors to the area around the light emitting device. have. The first and second reflective walls 134 and 136 may be connected to both ends of the support part P0, so that rigidity of both ends of the support part P0 may be strengthened.

17 is another example of a light emitting device package according to an embodiment of the present invention. In describing other embodiments, reference will be made to the above-described embodiments or descriptions of other examples. The configuration disclosed above may be selectively applied to the embodiment of FIG. 17 .

17 may be described with reference to FIGS. 1 to 8, and the light emitting device package includes a package body having a plurality of frames 111 and 113 and a body 115, an upper body having a cavity 102, and the cavity ( 102) may include a light emitting device 120. The protruding parts P1 and P2 of the frames 111 and 113 and the support part P0 of the body 115 refer to the configuration disclosed above. In the embodiment of the present invention, the recesses R1a, R1b, and R1c and the first resin 160 are disposed in the support part P0 of the body 115, and the light emitting elements 120a and 120b are attached to the support part P0. can do it

Referring to FIG. 17 , a light emitting device package may include a plurality of light emitting devices 120a and 120b. The plurality of light emitting devices 120a and 120b are spaced apart in the second direction and may be disposed on the support portion P0 and the protruding portions P1a, P2a, P1b, and P2b of the body 115.

A plurality of recesses R1a, R1b, and R1c may be disposed on the body 115. The plurality of recesses R1a, R1b, and R1c include first and third recesses R1a and R1c disposed under the first light emitting device 120a and disposed under the second light emitting device 120b. Second and third recesses R1b and R1c may be included. The third recess R1c may be disposed under the first and second light emitting devices 120a and 120b, respectively. The first to third recesses R1a, R1b, and R1c may be spaced apart from each other in the second direction and disposed on the same straight line. A length of the third recess R1c in the second direction may be longer than a distance between the first and second light emitting devices 120a and 120b. The first and third recesses R1a and R1c may include inner portions partially overlapping with the first light emitting device 120a and outer portions not overlapping. The second and third recesses R1b and R1c may include an inner portion overlapping a part of the second light emitting device 120b and an outer portion not overlapping.

A first resin 160 (see FIG. 5) may be disposed between the body 115 and the plurality of light emitting devices 120a and 120b. The first resin 160 may attach the plurality of light emitting elements 120a and 120b to the body 115 , respectively. The first resin 160 may be disposed in the first to third recesses R1a, R1b, and R1c. The first and second recesses R1a and R1b may be spaced apart from the side surface 132 of the cavity 102 to prevent diffusion of the first resin 160 toward the side surface of the cavity 102 .

The first and second bonding parts 121 and 122 of the first light emitting device 120a face the first protruding part P1a of the first frame 111 and the second protruding part P2a of the second frame 113. The first and second bonding parts 121 and 122 of the second light emitting element 120b are the third protrusion part P1b of the first frame 111 and the fourth protrusion part of the second frame 113. (P2b) may be placed face to face.

The first and third protrusions P1a and P1b protrude on the first frame 111 and are spaced apart from each other in the second direction, and the second and fourth protrusions P2a and P2b are on the second frame 113. It protrudes and may be spaced apart from each other in the second direction.

The first and second bonding portions 121 and 122 of the first light emitting device 120a are conductive to the first protrusion P1a of the first frame 111 and the second protrusion P2a of the second frame 113. The first and second bonding parts 121 and 122 of the second light emitting element 120b are the third protrusion part P1b of the first frame 111 and the fourth protrusion part of the second frame 113. (P2b) and the conductive part may be bonded.

The configuration of the protrusions P1a, P1b, P2a, and P2b, the support portion P0, and the recesses R1a, R1b, and R1c refer to the configuration of the embodiment disclosed above, and a plurality of light emitting devices are used to can improve Although the plurality of light emitting devices has been described as an example connected in parallel, three frames may be disposed and connected in series. First and second reflection walls may be disposed below the cavity of the light emitting device package, or light reflection efficiency may be improved by using a second resin.

The plurality of light emitting devices 120a and 120b may be arranged in parallel with each other or may be arranged in series. Each of the light emitting devices 120a and 120b may include one or a plurality of light emitting cells therein. The light emitting cell may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected in series to each other within one light emitting device. Accordingly, the light emitting device may have one or a plurality of light emitting cells, and when n light emitting cells are disposed in one light emitting device, it may be driven with n times the driving voltage. For example, when the driving voltage of one light emitting cell is 3V and two light emitting cells are disposed in one light emitting device, each light emitting device can be driven with a driving voltage of 6V. Alternatively, when the driving voltage of one light emitting cell is 3V and three light emitting cells are disposed in one light emitting device, each light emitting device may be driven with a driving voltage of 9V. The number of light emitting cells disposed in the light emitting device may be 1 or 2 to 5.

18 is an example of a light source device or light source module in which the light emitting device package disclosed above is disposed on a circuit board. As an example, it may be implemented as a light source device having the light emitting device package of the above embodiment(s). 18 will be described as a light source device having a light emitting device package according to the first embodiment, for example, and will be described later with reference to the description and drawings disclosed above. The above-described embodiment(s) may be selectively applied to the light emitting device package.

Referring to FIGS. 5 and 18 , in the light source module according to the embodiment, one or a plurality of light emitting device packages 100 may be disposed on a circuit board 201 .

The circuit board 201 may include a substrate member having a pad (not shown). A power supply circuit for controlling driving of the light emitting device 120 may be provided on the circuit board 201 . Each of the frames 111 and 113 of the light emitting device package 100 may be connected to respective pads of the circuit board 201 through bonding layers 221 and 223 . Accordingly, the light emitting device 120 of the light emitting device package 100 may receive power from respective pads of the circuit board 201 . Each pad of the circuit board 201 is made of at least one material selected from the group consisting of, for example, Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, Al, or alloys thereof.

Each pad of the circuit board 201 may be disposed to overlap the frames 111 and 113 and the first and second protrusions. Bonding layers 221 and 223 may be provided between the respective pads 211 and 213 and the frames 111 and 113 . The bonding layers 221 and 223 may be connected to the frames 111 and 113 and/or conductive parts of the first and second protrusions.

According to the light emitting device package according to the embodiment, the bonding parts 121 and 122 of the light emitting device 120 may receive driving power through the conductive parts disposed on the frames 111 and 113 . And, the melting point of the conductive part may be selected to have a higher value than the melting point of a general bonding material. The light emitting device device package according to the embodiment has an advantage in that electrical connection and physical bonding force are not deteriorated because a re-melting phenomenon does not occur even when bonded to a main substrate or the like through a reflow process. According to the light emitting device package according to the embodiment, the package body 110 and the body 115 do not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 and the body 115 from being damaged or discolored due to exposure to high temperatures.

The light emitting device package 100 according to the embodiment may be supplied mounted on a submount or a circuit board 201 . However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high-temperature process such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in the bonding area between the frame provided in the light emitting device package and the light emitting device, and thus the stability of electrical connection and physical coupling may be weakened. Accordingly, the position of the light emitting device may be weakened. Since may change, optical and electrical characteristics and reliability of the light emitting device package may be deteriorated. Therefore, in the light emitting device device package 100 according to the embodiment, the light emitting device 120 is attached to the first resin 160 and remelted even when bonded to the main substrate through a reflow process. -melting) phenomenon does not occur, so there is an advantage in that electrical connection and physical bonding strength are not deteriorated.

19 is a plan view illustrating a light emitting device according to an embodiment of the present invention, and FIG. 20 is a cross-sectional view of the light emitting device shown in FIG. 18 taken along line F-F.

Meanwhile, for better understanding, in FIG. 19 , the first sub-electrode is disposed below the first bonding part 1171 and the second bonding part 1172, but is electrically connected to the first bonding part 1171. 1141 and the second sub-electrode 1142 electrically connected to the second bonding portion 1172 are shown so that they can be seen.

As shown in FIG. 20 , the light emitting device 1000 according to the embodiment may include a light emitting structure 1110 disposed on a substrate 1105 . The substrate 1105 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 1105 may be provided as PSS (Patterned Sapphire Substrate) having a concavo-convex pattern formed on an upper surface thereof.

The light emitting structure 1110 may include a first conductivity type semiconductor layer 1111 , an active layer 1112 , and a second conductivity type semiconductor layer 1113 . The active layer 1112 may be disposed between the first conductivity type semiconductor layer 1111 and the second conductivity type semiconductor layer 1113 . For example, the active layer 1112 may be disposed on the first conductivity-type semiconductor layer 1111 , and the second conductivity-type semiconductor layer 1113 may be disposed on the active layer 1112 .

The light emitting device 1000 according to the embodiment may include a light-transmitting electrode layer 1130 . The light-transmitting electrode layer 1130 may increase light output by improving current diffusion. For example, the light-transmitting electrode layer 1130 may include at least one selected from a group including a metal, a metal oxide, and a metal nitride. The light-transmitting electrode layer 1130 may include a light-transmitting material. The light-transmitting electrode layer 1130 may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), or indium IGZO (IGZO). gallium zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni/ It may include at least one selected from the group including IrOx/Au/ITO, Pt, Ni, Au, Rh, and Pd.

The light emitting device 1000 according to the embodiment may include a reflective layer 1160 . The reflective layer 1160 may include a first reflective layer 1161 , a second reflective layer 1162 , and a third reflective layer 1163 . The reflective layer 1160 may be disposed on the light-transmitting electrode layer 1130 . The second reflective layer 1162 may include a first opening h1 exposing the light-transmitting electrode layer 1130 . The second reflective layer 1162 may include a plurality of first openings h1 disposed on the light-transmissive electrode layer 1130 . The first reflective layer 1161 may include a plurality of second openings h2 exposing an upper surface of the first conductivity type semiconductor layer 1111 .

The third reflective layer 1163 may be disposed between the first reflective layer 1161 and the second reflective layer 1162 . For example, the third reflective layer 1163 may be connected to the first reflective layer 1161 . Also, the third reflective layer 1163 may be connected to the second reflective layer 1162 . The third reflective layer 1163 may be disposed in direct physical contact with the first reflective layer 1161 and the second reflective layer 1162 .

The reflective layer 1160 according to the embodiment may contact the second conductivity-type semiconductor layer 1113 through a plurality of contact holes provided in the light-transmissive electrode layer 1130 . The reflective layer 1160 may physically contact the upper surface of the second conductivity type semiconductor layer 1113 through a plurality of contact holes provided in the light-transmitting electrode layer 1130 .

The reflective layer 1160 may be provided as an insulating reflective layer. For example, the reflective layer 1160 may be provided as a Distributed Bragg Reflector (DBR) layer. In addition, the reflective layer 1160 may be provided as an Omni Directional Reflector (ODR) layer. In addition, the reflective layer 1160 may be provided by stacking a DBR layer and an ODR layer.

The light emitting device 1000 according to the embodiment may include a first sub-electrode 1141 and a second sub-electrode 1142 . The first sub-electrode 1141 may be electrically connected to the first conductive semiconductor layer 1111 within the second opening h2. The first sub-electrode 1141 may be disposed on the first conductive semiconductor layer 1111 . For example, according to the light emitting device 1000 according to the embodiment, the first sub-electrode 1141 penetrates the second conductivity-type semiconductor layer 1113 and the active layer 1112 to form the first conductivity-type semiconductor layer ( 1111) may be disposed on the upper surface of the first conductivity type semiconductor layer 1111 in a recess extending to a partial region.

The first sub-electrode 1141 may be electrically connected to the upper surface of the first conductive semiconductor layer 1111 through the second opening h2 provided in the first reflective layer 1161 . The second opening h2 and the recess may vertically overlap. For example, the first sub-electrode 1141 may be formed on the upper surface of the first conductive semiconductor layer 1111 in a plurality of recess regions. can be contacted directly.

The second sub-electrode 1142 may be electrically connected to the second conductive semiconductor layer 1113 . The second sub-electrode 1142 may be disposed on the second conductive semiconductor layer 1113 . According to the embodiment, the translucent electrode layer 1130 may be disposed between the second sub-electrode 1142 and the second conductivity-type semiconductor layer 1113 .

The second sub-electrode 1142 may be electrically connected to the second conductive semiconductor layer 1113 through the first opening h1 provided in the second reflective layer 1162 . For example, the second sub-electrode 1142 may be electrically connected to the second conductivity-type semiconductor layer 1113 through the transmissive electrode layer 1130 in a plurality of P regions.

The second sub-electrode 1142 may directly contact the upper surface of the light-transmissive electrode layer 1130 through the plurality of first openings h1 provided in the second reflective layer 1162 in the plurality of P regions. According to the embodiment, the first sub-electrode 1141 and the second sub-electrode 1142 may have polarities and may be spaced apart from each other.

The first sub-electrode 1141 and the second sub-electrode 1142 may have a single-layer or multi-layer structure. For example, the first sub-electrode 1141 and the second sub-electrode 1142 may be ohmic electrodes. For example, the first sub-electrode 1141 and the second sub-electrode 1142 may be ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO, Ag , Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, or at least one or an alloy of two or more of these materials. In FIG. 20, regions R11, R12, and R13 are indicated to distinguish overlapping regions for each region of each sub-electrode.

The light emitting device 1000 according to the embodiment may include a protective layer 1150. The protective layer 1150 may include a plurality of third openings h3 exposing the second sub-electrode 1142 . The plurality of third openings h3 may be disposed to correspond to the plurality of PB regions provided in the second sub-electrode 1142 . In addition, the protective layer 1150 may include a plurality of fourth openings h4 exposing the first sub-electrode 1141 . The plurality of fourth openings h4 may be disposed to correspond to the plurality of NB regions provided in the first sub-electrode 1141 . The protective layer 1150 may be disposed on the reflective layer 1160 . The protective layer 1150 may be disposed on the first reflective layer 1161 , the second reflective layer 1162 , and the third reflective layer 1163 . For example, the protective layer 1150 may be provided with an insulating material. For example, the protective layer 1150 is Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y It may be formed of at least one material selected from the group including.

The light emitting device 1000 according to the embodiment may include a first bonding part 1171 and a second bonding part 1172 disposed on the protective layer 1150 . The first bonding part 1171 may be disposed on the first reflective layer 1161 . Also, the second bonding part 1172 may be disposed on the second reflective layer 1162 . The second bonding part 1172 may be spaced apart from the first bonding part 1171 . The first bonding portion 1171 may contact the upper surface of the first sub-electrode 1141 through the plurality of fourth openings h4 provided in the protective layer 1150 in the plurality of NB regions. The plurality of NB areas may be arranged to be vertically offset from the second opening h2. When the plurality of NB regions and the second opening h2 are vertically displaced from each other, current injected into the first bonding part 1171 can be evenly spread in the horizontal direction of the first sub-electrode 1141, Accordingly, current may be evenly injected in the plurality of NB regions.

In addition, the second bonding part 1172 may contact the upper surface of the second sub-electrode 1142 through the plurality of third openings h3 provided in the protective layer 1150 in a plurality of PB regions. have. When the plurality of PB regions and the plurality of first openings h1 are not vertically overlapped, the current injected into the second bonding part 1172 spreads evenly in the horizontal direction of the second sub-electrode 1142. Therefore, current can be evenly injected in the plurality of PB regions. Since power can be supplied through a plurality of areas, there is an advantage in that a current dissipation effect occurs and an operating voltage can be reduced according to the contact area increase and the contact area distribution.

Accordingly, the first reflective layer 1161 and the second reflective layer 1162 reflect light emitted from the active layer 1112 of the light emitting structure 1110 to form a first sub-electrode 1141 and a second sub-electrode ( 1142), the luminous intensity Po may be improved by minimizing light absorption. The first reflective layer 1161 and the second reflective layer 1162 may form a DBR structure in which materials having different refractive indices are repeatedly disposed. For example, the first reflective layer 1161 and the second reflective layer 1162 are TiO ₂ , SiO ₂ , Ta ₂ O ₅ , HfO ₂ It may be arranged in a single-layer or laminated structure including at least one of them. Also, according to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided as ODR layers. According to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided in a kind of hybrid form in which a DBR layer and an ODR layer are stacked.

When the light emitting device according to the embodiment is implemented as a light emitting device package by being mounted in a flip chip bonding method, light provided from the light emitting structure 1110 may be emitted through the substrate 1105 . Light emitted from the light emitting structure 1110 may be reflected by the first reflective layer 1161 and the second reflective layer 1162 and emitted toward the substrate 1105 .

In addition, light emitted from the light emitting structure 1110 may also be emitted in a lateral direction of the light emitting structure 1110 . In addition, light emitted from the light emitting structure 1110 is bonded to the first bonding unit 1171 and the second bonding unit among the surfaces on which the first bonding unit 1171 and the second bonding unit 1172 are disposed. The portion 1172 may be emitted to the outside through an area not provided.

Accordingly, the light emitting device 1000 according to the embodiment can emit light in six directions surrounding the light emitting structure 1110, and can significantly improve the luminous intensity.

Meanwhile, according to the light emitting device according to the embodiment, when viewed from the upper direction of the light emitting device 1000, the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is The portion 1171 and the second bonding portion 1172 may be provided equal to or smaller than 60% of the total area of the upper surface of the light emitting device 1000 .

For example, the total area of the upper surface of the light emitting device 1000 may correspond to an area defined by the horizontal length and the vertical length of the lower surface of the first conductivity type semiconductor layer 1111 of the light emitting structure 1110. . Also, the entire area of the upper surface of the light emitting device 1000 may correspond to the area of the upper or lower surface of the substrate 1105 .

In this way, the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is provided equal to or smaller than 60% of the total area of the light emitting device 1000, so that the first bonding The amount of light emitted to the surface where the portion 1171 and the second bonding portion 1172 are disposed can be increased. Accordingly, according to the embodiment, since the amount of light emitted in the direction of the six surfaces of the light emitting device 1000 increases, the light extraction efficiency can be improved and the luminous intensity Po can be increased.

In addition, when viewed from the upper direction of the light emitting element 1000, the sum of the area of the first bonding part 1171 and the area of the second bonding part 1172 is 30 of the total area of the light emitting element 1000. may be given equal to or greater than the %.

In this way, the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is equal to or larger than 30% of the total area of the light emitting device 1000, so that the first bonding Stable mounting can be performed through the unit 1171 and the second bonding unit 1172, and electrical characteristics of the light emitting device 1000 can be secured.

In the light emitting device 1000 according to the embodiment, in consideration of light extraction efficiency and bonding stability, the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is the light emitting element 1000 ) can be selected to be 30% or more and 60% or less of the total area of ).

That is, when the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is greater than or equal to 30% and less than or equal to 100% of the total area of the light emitting device 1000, the light emitting device 1000 Stable mounting can be performed by securing electrical characteristics and securing bonding force to be mounted on the light emitting device package.

In addition, when the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is more than 0% and less than 60% of the total area of the light emitting device 1000, the first bonding part 1171 ) and the second bonding unit 1172 are disposed, the light extraction efficiency of the light emitting device 1000 may be improved and the light intensity Po may be increased.

In the embodiment, the areas of the first bonding part 1171 and the second bonding part 1172 are secured in order to secure the electrical characteristics of the light emitting device 1000 and the bonding force mounted on the light emitting device package, and to increase the light intensity. The sum of was selected to be 30% or more to 60% or less of the total area of the light emitting device 1000.

Also, according to the light emitting device 1000 according to the embodiment, the third reflective layer 1163 may be disposed between the first bonding part 1171 and the second bonding part 1172 . For example, the length of the third reflective layer 1163 along the long axis direction of the light emitting element 1000 may be disposed corresponding to the distance between the first bonding part 1171 and the second bonding part 1172. have. Also, the area of the third reflective layer 1163 may be 10% or more and 25% or less of the entire upper surface of the light emitting device 1000, for example.

When the area of the third reflective layer 1163 is 10% or more of the total upper surface of the light emitting device 1000, discoloration or cracking of the package body disposed under the light emitting device can be prevented, and 25% In the case of the following, it is advantageous to secure light extraction efficiency to emit light from the six sides of the light emitting device.

In addition, in another embodiment, the area of the third reflective layer 1163 is disposed to be greater than 0% to less than 10% of the entire upper surface of the light emitting device 1000 in order to secure a higher light extraction efficiency without being limited thereto. In order to further secure an effect of preventing discoloration or cracking in the package body, the area of the third reflective layer 1163 is greater than 25% to 100% of the entire upper surface of the light emitting device 1000. Can be placed below.

In addition, a second region provided between the side surface disposed in the long axis direction of the light emitting element 1000 and the first bonding part 1171 or the second bonding part 1172 adjacent to the light emitting structure 1110 is generated. Light can be transmitted and emitted.

In addition, the light generated by the light emitting structure is transmitted to a third area provided between the first bonding part 1171 and the second bonding part 1172 adjacent to the side surface disposed in the direction of the short axis of the light emitting element 1000. It can be permeated and released.

According to an embodiment, the size of the first reflective layer 1161 may be several micrometers larger than that of the first bonding part 1171 . For example, the area of the first reflective layer 1161 may be provided with a size sufficient to completely cover the area of the first bonding part 1171 . Considering the process error, the length of one side of the first reflective layer 1161 may be greater than the length of one side of the first bonding part 1171 by, for example, about 4 micrometers to about 10 micrometers.

Also, the size of the second reflective layer 1162 may be several micrometers larger than that of the second bonding portion 1172 . For example, the area of the second reflective layer 1162 may be provided to a size sufficient to completely cover the area of the second bonding portion 1172 . Considering the process error, the length of one side of the second reflective layer 1162 may be greater than the length of one side of the second bonding part 1172 by, for example, about 4 micrometers to about 10 micrometers.

According to the embodiment, the light emitted from the light emitting structure 1110 is transmitted to the first bonding unit 1171 and the second bonding unit 1172 by the first reflective layer 1161 and the second reflective layer 1162. ) and can be reflected without incident. Accordingly, according to the embodiment, the light emitted from the light emitting structure 1110 is incident on the first bonding unit 1171 and the second bonding unit 1172, and loss thereof can be minimized.

In addition, according to the light emitting device 1000 according to the embodiment, since the third reflective layer 1163 is disposed between the first bonding unit 1171 and the second bonding unit 1172, the first bonding unit ( 1171) and the second bonding portion 1172 can adjust the amount of light emitted.

As described above, the light emitting device 1000 according to the embodiment may be mounted in a flip chip bonding method and provided in the form of a light emitting device package. At this time, when the package body in which the light emitting device 1000 is mounted is made of resin or the like, the package body is discolored by strong short-wavelength light emitted from the light emitting device 1000 in the lower region of the light emitting device 1000. or cracks may occur.

However, according to the light emitting device 1000 according to the embodiment, since the amount of light emitted between the regions where the first bonding part 1171 and the second bonding part 1172 are disposed can be adjusted, the light emitting element 1000 ) It is possible to prevent discoloration or cracking of the package body disposed in the lower region.

According to the embodiment, the light is emitted from an area of 20% or more of the upper surface of the light emitting device 1000 on which the first bonding part 1171, the second bonding part 1172, and the third reflective layer 1163 are disposed. Light generated by the structure 1110 may be transmitted and emitted.

Accordingly, according to the embodiment, since the amount of light emitted in the direction of the six surfaces of the light emitting device 1000 increases, the light extraction efficiency can be improved and the luminous intensity Po can be increased. In addition, discoloration or cracking of the package body disposed close to the lower surface of the light emitting device 1000 can be prevented.

In addition, according to the light emitting device 1000 according to the embodiment, a plurality of contact holes C1 , C2 , and C3 may be provided in the light-transmitting electrode layer 1130 . The second conductive semiconductor layer 1113 and the reflective layer 1160 may be bonded through the plurality of contact holes C1 , C2 , and C3 provided in the light-transmissive electrode layer 1130 . Since the reflective layer 1160 can directly contact the second conductivity-type semiconductor layer 1113, adhesive strength can be improved compared to when the reflective layer 1160 contacts the translucent electrode layer 1130.

When the reflective layer 1160 directly contacts only the light-transmissive electrode layer 1130, bonding strength or adhesive strength between the reflective layer 1160 and the light-transmitting electrode layer 1130 may be weakened. For example, when the insulating layer and the metal layer are bonded, bonding strength or adhesive strength between materials may be weakened.

For example, when the bonding or adhesive strength between the reflective layer 1160 and the light-transmissive electrode layer 1130 is weak, separation may occur between the two layers. In this way, when separation occurs between the reflective layer 1160 and the light-transmitting electrode layer 1130, the characteristics of the light emitting device 1000 may be deteriorated, and reliability of the light emitting device 1000 cannot be secured.

However, according to the embodiment, since the reflective layer 1160 may directly contact the second conductivity type semiconductor layer 1113, the reflective layer 1160, the translucent electrode layer 1130, and the second conductivity type semiconductor layer The bonding force and adhesive force between (1113) can be stably provided.

Therefore, according to the embodiment, since the bonding force between the reflective layer 1160 and the second conductivity-type semiconductor layer 1113 can be stably provided, the reflective layer 1160 is prevented from being separated from the translucent electrode layer 1130. You will be able to do it. In addition, since the bonding strength between the reflective layer 1160 and the second conductivity type semiconductor layer 1113 can be stably provided, the reliability of the light emitting device 1000 can be improved.

Meanwhile, as described above, a plurality of contact holes C1 , C2 , and C3 may be provided in the light-transmitting electrode layer 1130 . Light emitted from the active layer 1112 is incident on the reflective layer 1160 through the plurality of contact holes C1 , C2 , and C3 provided in the light-transmissive electrode layer 1130 and can be reflected. Accordingly, loss of light generated in the active layer 1112 incident to the translucent electrode layer 1130 can be reduced and light extraction efficiency can be improved. Accordingly, according to the light emitting device 1000 according to the embodiment, the luminous intensity can be improved.

As another example, the sum of the areas of the first and second bonding parts may be set to 10% or less based on the area of the upper surface of the substrate in order to increase light extraction efficiency by securing a light emitting area emitted from the light emitting device. The first and second bonding parts may be a conductor or a pad disclosed in the embodiment. According to an embodiment, the sum of the areas of the first and second bonding parts may be 0.7% or more based on the area of the upper surface of the substrate. According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding parts may be set to 0.7% or more based on the upper surface area of the substrate in order to provide a stable bonding force to the mounted light emitting device. .

For example, a width of the light emitting device of the first bonding portion along a long axis direction may be provided in several tens of micrometers. A width of the first bonding portion may be provided, for example, in a range of 70 micrometers to 90 micrometers. In addition, the area of the first bonding portion may be provided in thousands of square micrometers.

In addition, a width of the second bonding portion along a long axis direction of the light emitting device may be provided in several tens of micrometers. The second bonding portion may have a width of 70 micrometers to 90 micrometers, for example. Also, the area of the second bonding portion may be provided in thousands of square micrometers. In this way, as the area of the first and second bonding parts is provided small, the amount of light transmitted through the lower surface of the light emitting device can be increased.

The light emitting device disclosed above has been described as a structure having one light emitting cell. When the light emitting cell includes the above light emitting structure, the driving voltage of the light emitting device may be the voltage applied to one light emitting cell. As an example of the light emitting device disclosed in the embodiment, a light emitting device having two or three or more light emitting cells may be included. Accordingly, a high voltage light emitting device package can be provided.

On the other hand, the light emitting device package according to the embodiment of the invention described above may be supplied mounted on a submount or a circuit board. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high-temperature process such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in the bonding area between the frame provided in the light emitting device package and the light emitting device, and thus the stability of electrical connection and physical coupling may be weakened. Accordingly, the position of the light emitting device may be weakened. Since may change, optical and electrical characteristics and reliability of the light emitting device package may be deteriorated. However, according to the light emitting device package and the method for manufacturing the light emitting device package according to the embodiment of the present invention, bonding parts of the light emitting device according to the embodiment of the present invention may receive driving power through the protruding portion and the conductive portion. And, the melting point of the protruding portion and the conductive portion may be selected to have a higher value than that of a general bonding material. Therefore, even when the light emitting device device package according to the embodiment of the present invention is bonded to the main substrate through a reflow process, the re-melting phenomenon does not occur, so that the electrical connection and physical bonding force are not deteriorated. There are advantages.

In addition, according to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment of the present invention, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to an embodiment of the present invention, it is possible to prevent the package body 110 from being damaged or discolored due to exposure to high temperatures. Accordingly, the range of selection for the material constituting the body 115 can be widened. According to an embodiment of the present invention, the body 115 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic. For example, the body 115 includes at least one material selected from the group consisting of PolyPhtal Amide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, Epoxy Molding Compound (EMC) resin, and Silicone Molding Compound (SMC) resin. can do.

Meanwhile, one or a plurality of light emitting device packages according to an embodiment of the present invention may be disposed on a circuit board and applied to a light source device. In addition, the light source device may include a display device, a lighting device, a head lamp, and the like according to industrial fields.

As an example of the light source device, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module including a light emitting element that emits light, and a light emitting module disposed in front of the reflector and guiding light emitted from the light emitting module forward. A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying image signals to the display panel, A color filter disposed on the front side may be included. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. In addition, the display device may have a structure in which light emitting elements emitting red, green, and blue light are respectively disposed without including a color filter.

As another example of a light source device, a headlamp includes a light emitting module including a light emitting device package disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, forward, and a light reflected by the reflector. It may include a lens that refracts light forward, and a shade that blocks or reflects a part of the light reflected by the reflector and directed to the lens to achieve a light distribution pattern desired by a designer.

A lighting device, which is another example of a light source device, may include a cover, a light source module, a radiator, a power supply unit, an inner case, and a socket. In addition, the light source device according to an embodiment of the present invention may further include any one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment of the present invention.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified with respect to other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to these combinations and variations should be interpreted as being included in the scope of the embodiments.

Although the above has been described centering on the embodiment, this is only an example and is not intended to limit the embodiment, and those skilled in the art to which the embodiment belongs may find various things not exemplified above to the extent that they do not deviate from the essential characteristics of the present embodiment. It will be appreciated that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

110: package body
111,113: frame
115: body
120: light emitting element
121: first bonding unit
122: second bonding unit
123: light emitting structure
124 Substrate
125: protection element
160: first resin
162: second resin
127,129: conductive part
R1,R2: Recess

Claims (15)

A first frame and a second frame that are spaced apart from each other and include upper and lower surfaces, respectively;
a body disposed between the first frame and the second frame; and
a light emitting element disposed on the body; including,
The first frame includes a first protrusion protruding toward the light emitting element from an upper surface of the first frame,
The second frame includes a second protrusion protruding toward the light emitting element from an upper surface of the second frame,
The light emitting element includes a first bonding portion facing the first protrusion and a second bonding portion facing the second protrusion,
The body includes a support portion protruding toward the light emitting element,
A first conductive part disposed between the first bonding part and the first protruding part;
A second conductive part disposed between the second bonding part and the second protruding part,
The support portion of the body includes first and second recesses spaced apart from each other. According to claim 1,
The support portion of the body has a first height relative to the upper surface of the first frame,
The first and second protrusions have a second height based on the upper surface of the first frame,
The first height is higher than the second height,
An upper surface of the support part is disposed higher than upper surfaces of the first and second bonding parts based on the upper surface of the first frame. According to claim 1,
The first recess includes an inner portion overlapping the light emitting device in a vertical direction and an outer portion extending outward from one side surface of the light emitting device,
The second recess includes an inner portion overlapping the light emitting device in a vertical direction and an outer portion extending outward from the other side surface of the light emitting device. According to claim 3,
A first resin disposed between the light emitting element and the body,
The first resin is disposed in the first and second recesses,
A second resin around the lower periphery of the light emitting element, and
A molding part is included on the light emitting element and the second resin,
The second resin is disposed around the first and second protrusions. According to claim 1 or 2,
An upper body disposed above the body and the first and second frames and having a cavity therein,
The side surface of the cavity has a flat upper surface and extends in the direction of the first and second protrusions from the first reflecting wall at a lower portion of the side surface of the cavity and extending in the direction of the first and second protrusions. Including a second reflecting wall to be,
The upper surface of the second reflecting wall has a height lower than the height of the upper surface of the first reflecting wall,
A second resin is included around the lower circumference of the light emitting element,
The second reflective wall is connected to the support portion light emitting device package.
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