KR20190036538A - 기체상 또는 액상 에피택시를 이용한 gan 후막화를 위한 시드 웨이퍼 - Google Patents
기체상 또는 액상 에피택시를 이용한 gan 후막화를 위한 시드 웨이퍼 Download PDFInfo
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- KR20190036538A KR20190036538A KR1020197004750A KR20197004750A KR20190036538A KR 20190036538 A KR20190036538 A KR 20190036538A KR 1020197004750 A KR1020197004750 A KR 1020197004750A KR 20197004750 A KR20197004750 A KR 20197004750A KR 20190036538 A KR20190036538 A KR 20190036538A
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Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662370169P | 2016-08-02 | 2016-08-02 | |
| US62/370,169 | 2016-08-02 | ||
| US201662378126P | 2016-08-22 | 2016-08-22 | |
| US62/378,126 | 2016-08-22 | ||
| US15/662,201 US10186630B2 (en) | 2016-08-02 | 2017-07-27 | Seed wafer for GaN thickening using gas- or liquid-phase epitaxy |
| US15/662,201 | 2017-07-27 | ||
| PCT/IB2017/054668 WO2018025166A1 (en) | 2016-08-02 | 2017-07-31 | Seed wafer for gan thickening using gas- or liquid-phase epitaxy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20190036538A true KR20190036538A (ko) | 2019-04-04 |
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| US12476108B2 (en) | 2019-05-30 | 2025-11-18 | Mitsubishi Chemical Corporation | GaN substrate wafer and production method for same |
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| US20180019169A1 (en) * | 2016-07-12 | 2018-01-18 | QMAT, Inc. | Backing substrate stabilizing donor substrate for implant or reclamation |
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| US10020212B1 (en) * | 2017-10-09 | 2018-07-10 | Oculus Vr, Llc | Micro-LED pick and place using metallic gallium |
| US10510532B1 (en) * | 2018-05-29 | 2019-12-17 | Industry-University Cooperation Foundation Hanyang University | Method for manufacturing gallium nitride substrate using the multi ion implantation |
| CN108878266B (zh) * | 2018-07-03 | 2020-09-08 | 北京大学 | 一种在多晶或非晶衬底上生长单晶氮化镓薄膜的方法 |
| CN111785609B (zh) * | 2019-04-04 | 2023-06-23 | 世界先进积体电路股份有限公司 | 半导体结构及其制造方法 |
| EP3754731A1 (en) * | 2019-06-21 | 2020-12-23 | Aledia | Method for local removal of semiconductor wires |
| US11011391B2 (en) * | 2019-07-03 | 2021-05-18 | Vanguard International Semiconductor Corporation | Semiconductor structure and method for fabricating the same |
| CN110600435A (zh) * | 2019-09-05 | 2019-12-20 | 方天琦 | 多层复合基板结构及其制备方法 |
| EP4121576A4 (en) * | 2020-03-20 | 2024-07-10 | The Regents of The University of Michigan | GROWTH ANNEAL CYCLING OF SEMICONDUCTORS |
| TWI728846B (zh) | 2020-06-19 | 2021-05-21 | 錼創顯示科技股份有限公司 | 發光半導體結構及發光半導體基板 |
| CN111668353B (zh) * | 2020-06-19 | 2021-12-17 | 錼创显示科技股份有限公司 | 发光半导体结构及半导体基板 |
| CN116802790A (zh) * | 2021-04-23 | 2023-09-22 | 华为技术有限公司 | 一种hemt器件及其制作方法、电子设备 |
| TWI785763B (zh) * | 2021-08-27 | 2022-12-01 | 合晶科技股份有限公司 | 複合基板及其製造方法 |
| CN114864380B (zh) * | 2022-04-22 | 2025-02-21 | 江苏第三代半导体研究院有限公司 | 降低裂纹的外延方法及其外延片 |
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- 2017-07-31 WO PCT/IB2017/054668 patent/WO2018025166A1/en not_active Ceased
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12476108B2 (en) | 2019-05-30 | 2025-11-18 | Mitsubishi Chemical Corporation | GaN substrate wafer and production method for same |
Also Published As
| Publication number | Publication date |
|---|---|
| US10186630B2 (en) | 2019-01-22 |
| CN109790642A (zh) | 2019-05-21 |
| JP2019528225A (ja) | 2019-10-10 |
| US20180040764A1 (en) | 2018-02-08 |
| US20190288158A1 (en) | 2019-09-19 |
| WO2018025166A1 (en) | 2018-02-08 |
| EP3494248A1 (en) | 2019-06-12 |
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