CN109790642A - 使用气相或液相外延用于GaN增厚的种子晶片 - Google Patents

使用气相或液相外延用于GaN增厚的种子晶片 Download PDF

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CN109790642A
CN109790642A CN201780061091.1A CN201780061091A CN109790642A CN 109790642 A CN109790642 A CN 109790642A CN 201780061091 A CN201780061091 A CN 201780061091A CN 109790642 A CN109790642 A CN 109790642A
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gan
substrate
layer
energy
method described
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弗兰乔斯·J·亨利
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Qmat Inc
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Qmat Inc
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
CN201780061091.1A 2016-08-02 2017-07-31 使用气相或液相外延用于GaN增厚的种子晶片 Pending CN109790642A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662370169P 2016-08-02 2016-08-02
US62/370,169 2016-08-02
US201662378126P 2016-08-22 2016-08-22
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