KR20180118603A - 연마용 조성물 - Google Patents

연마용 조성물 Download PDF

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Publication number
KR20180118603A
KR20180118603A KR1020187017929A KR20187017929A KR20180118603A KR 20180118603 A KR20180118603 A KR 20180118603A KR 1020187017929 A KR1020187017929 A KR 1020187017929A KR 20187017929 A KR20187017929 A KR 20187017929A KR 20180118603 A KR20180118603 A KR 20180118603A
Authority
KR
South Korea
Prior art keywords
polishing
polishing composition
water
weight
composition according
Prior art date
Application number
KR1020187017929A
Other languages
English (en)
Korean (ko)
Inventor
고이치 후쿠이
다케히로 유아사
유지 가와우라
Original Assignee
에이티 실리카 가부시키가이샤
신에쯔 한도타이 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이티 실리카 가부시키가이샤, 신에쯔 한도타이 가부시키가이샤 filed Critical 에이티 실리카 가부시키가이샤
Publication of KR20180118603A publication Critical patent/KR20180118603A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020187017929A 2016-03-04 2017-02-08 연마용 조성물 KR20180118603A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2016-042674 2016-03-04
JP2016042674A JP6645873B2 (ja) 2016-03-04 2016-03-04 研磨用組成物
PCT/JP2017/004582 WO2017150114A1 (ja) 2016-03-04 2017-02-08 研磨用組成物

Publications (1)

Publication Number Publication Date
KR20180118603A true KR20180118603A (ko) 2018-10-31

Family

ID=59744050

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187017929A KR20180118603A (ko) 2016-03-04 2017-02-08 연마용 조성물

Country Status (3)

Country Link
JP (1) JP6645873B2 (ja)
KR (1) KR20180118603A (ja)
WO (1) WO2017150114A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6255471B1 (ja) * 2016-12-28 2017-12-27 日揮触媒化成株式会社 シリカ粒子分散液及びその製造方法
JP7477964B2 (ja) * 2019-12-13 2024-05-02 インテグリス・インコーポレーテッド 化学機械研磨組成物及びそれを用いた化学機械研磨方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0655957B2 (ja) * 1986-02-28 1994-07-27 徳山曹達株式会社 洗浄用組成物
JPS63196697A (ja) * 1987-02-09 1988-08-15 花王株式会社 液体クレンザ−組成物
JPH0425599A (ja) * 1990-05-21 1992-01-29 Kao Corp スコアリングパッド用洗浄剤組成物
JP4318840B2 (ja) * 2000-06-21 2009-08-26 花王株式会社 硬質表面用防汚剤
JP2002180090A (ja) * 2000-12-08 2002-06-26 Kao Corp 洗浄つや出し剤組成物
JP2002190458A (ja) * 2000-12-21 2002-07-05 Jsr Corp 化学機械研磨用水系分散体
JP2003147391A (ja) * 2001-11-16 2003-05-21 Toyo Seikan Kaisha Ltd 研磨洗浄用エアゾール製品
JP2009263560A (ja) * 2008-04-28 2009-11-12 Dai Ichi Kogyo Seiyaku Co Ltd 液体洗浄剤組成物
JP2010129941A (ja) * 2008-12-01 2010-06-10 Fujifilm Corp 金属用研磨液、および化学的機械的研磨方法
JP5441578B2 (ja) * 2009-09-11 2014-03-12 花王株式会社 研磨液組成物
CA2816718A1 (en) * 2010-11-16 2012-05-24 Dow Global Technologies Llc Hard surface cleaners comprising low voc, low odor alkanolamines
US20130302984A1 (en) * 2011-01-26 2013-11-14 Fujimi Incorporated Polishing composition, polishing method using same, and substrate production method
US9487674B2 (en) * 2011-09-07 2016-11-08 Basf Se Chemical mechanical polishing (CMP) composition comprising a glycoside
JP6105916B2 (ja) * 2012-12-17 2017-03-29 株式会社フジミインコーポレーテッド セルロース誘導体組成物、当該セルロース誘導体組成物を用いた研磨用組成物、当該研磨用組成物の製造方法、および当該研磨用組成物を用いた基板の製造方法

Also Published As

Publication number Publication date
JP6645873B2 (ja) 2020-02-14
JP2017155198A (ja) 2017-09-07
WO2017150114A1 (ja) 2017-09-08

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E601 Decision to refuse application