KR20180104733A - How to check electrical characteristics - Google Patents

Abstract

Provided is an electrical property inspection method capable of inspecting electrical characteristics of a semiconductor device even when the electrode of the semiconductor device does not protrude. (A) for attaching an anisotropic conductive film containing conductive particles to an electrode of a semiconductor device; and (B) inspecting an electrical characteristic of the semiconductor device by pressing a probe on the electrode of the semiconductor device through the anisotropic conductive film. Respectively. In the inspection step (B), the pad electrode 13a of the semiconductor device and the probe 30 are connected through the conductive particles 20a of the anisotropic conductive film 20.

Description

How to check electrical characteristics

The present technology relates to a method of inspecting electrical characteristics of a semiconductor device formed of a wafer, a chip, or the like. This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2016-079852, filed on April 12, 2016, the entirety of which is incorporated herein by reference.

Conventionally, electric characteristics of a semiconductor device at a wafer level and a chip level are evaluated by directly contacting probes with pads or bumps (see, for example, Patent Document 1). According to this method, it is possible to inspect the package before or after the three-dimensional mounting, but since the probe is brought into direct contact with the electrode or the like, the electrode or the like may be damaged, and after the inspection product is mounted, .

On the other hand, in evaluating the electrical characteristics of package devices such as QFP (Quad Flat Package) and BGA (Ball Grid Array), solder bumps and lead pins of a package and a test circuit board are provided with gold-plated metal thin wires regularly embedded in silicone rubber It is known to use an anisotropic conductive elastomeric connector (see, for example, Patent Document 2).

Japanese Patent Application Laid-Open No. 2009-042008 Japanese Patent Application Laid-Open No. 8-055648

However, in the elastomeric connector described in Patent Document 2, when electrodes are not protruded like a pad having an insulating layer opened, it becomes difficult to connect to the semiconductor device, and it is difficult to conduct the electrical property test of the semiconductor device Do.

The present invention solves the above-described problems, and provides a method of inspecting an electrical characteristic of the semiconductor device, even when the electrode of the semiconductor device does not protrude.

The inventors of the present invention have conducted intensive studies and found that by using an anisotropic conductive film containing conductive particles as a connector, it is possible to inspect electrical characteristics of a semiconductor device even when electrodes of the semiconductor device are not protruded.

That is, a method of inspecting electric characteristics relating to the present invention includes an attaching step of attaching an anisotropic conductive film containing conductive particles to an electrode of a semiconductor device, a step of pressing a probe on the electrode of the semiconductor device through the anisotropic conductive film, And an inspection process for inspecting the electrical characteristics of the device.

A semiconductor device manufacturing method according to the present invention includes: an integrated circuit forming step of forming a semiconductor device on a wafer; a first inspection step of inspecting electrical characteristics of the semiconductor device; And a second inspection step of inspecting electrical characteristics of the semiconductor device after the mounting step. In at least one of the first inspection step and the second inspection step, at least one of the electrodes of the semiconductor device An anisotropic conductive film containing conductive particles is attached, and the probe is pressed against the electrode of the semiconductor device through the anisotropic conductive film to examine the electrical characteristics.

According to this technique, since the probe is pressed against the electrode of the semiconductor device through the anisotropic conductive film containing the conductive particles, it is possible to inspect the electrical characteristic even when the electrode of the semiconductor device does not protrude.

1 is a cross-sectional view schematically showing an attaching step of attaching an anisotropic conductive film to an electrode of a semiconductor device formed on a wafer.
2 is a cross-sectional view schematically showing an inspection process of pressing a probe onto an electrode of a semiconductor device through an anisotropic conductive film.
3 is a cross-sectional view schematically showing a modification of an inspection process of pressing a probe on an electrode of a semiconductor device through an anisotropic conductive film.
4 is a cross-sectional view schematically showing an embodiment of a manufacturing method of a semiconductor device.

Hereinafter, embodiments of the present technology will be described in detail in the following procedure.

1. Inspection of electrical characteristics

2. Manufacturing Method of Semiconductor Device

<1. How to check electrical properties>

A method of inspecting an electrical characteristic using the technique includes an attaching step (A) of attaching an anisotropic conductive film containing conductive particles to an electrode of a semiconductor device, a step of pressing a probe on the electrode of the semiconductor device through the anisotropic conductive film, (B) for inspecting the electrical characteristics of the battery. Thereby, since the electrodes and the probes of the semiconductor device are connected through the conductive particles of the anisotropic conductive film, the electrical characteristics of the semiconductor device can be inspected.

The semiconductor device may be any one of a wafer level formed on a wafer, a chip level that has been separated, and a package level after packaging. Hereinafter, a method of inspecting electric characteristics at a wafer level of a semiconductor device formed with penetrating electrodes penetrating in the thickness direction of the wafer will be described with reference to FIGS. (C) for peeling off the anisotropic conductive film from the substrate.

[Attachment Step (A)]

1 is a cross-sectional view schematically showing an attaching step of attaching an anisotropic conductive film to an electrode of a semiconductor device formed on a wafer. As shown in Fig. 1, in the adhering step (A), an anisotropic conductive film 20 containing conductive particles 20a is attached to an electrode of a semiconductor device.

The semiconductor device shown as an example includes a wafer 11 having a penetrating electrode 11a, a first wiring layer 12 formed with an integrated circuit, and a second wiring layer 13 having a pad electrode 13a do. The semiconductor device further includes a support substrate 14 on the first wiring layer 12 side as a support material when the wafer 11 is thinned.

The wafer 11 is, for example, a silicon substrate and has a penetrating electrode 11a penetrating in the thickness direction of the substrate. The penetrating electrode 11a is also called TSV (through silicon via), and one end is electrically connected to the integrated circuit, and the terminal of the integrated circuit is drawn out to the second surface side.

The first wiring layer 12 is formed on the first surface (so-called surface) side of the wafer 11 and has an integrated circuit connected to one end of the penetrating electrode 11a. The integrated circuit is obtained by integrating elements having functions such as a transistor, a resistor (electric resistance), and a capacitor on the wafer 11, for example.

The second wiring layer 13 is formed on the second surface (so-called back surface) side of the wafer 11 and has a pad electrode 13a electrically connected to the other end of the penetrating electrode 11a. The pad electrode 13a is located on the inner side of the surface of the second wiring layer 13 by the opening of the insulating film.

The anisotropic conductive film 20 is formed by dispersing conductive particles 20a in a binder. The binder is not particularly limited, and in the inspection step (B) to be described later, a resin that flows appropriately by pressing the probe can be used. Examples of such a binder include an epoxy resin, an acrylic resin, and a silicone rubber. The anisotropic conductive film 20 shown in Fig. 1 is a single layer containing the conductive particles 20a for the sake of simplicity, but the present invention is not limited thereto. For example, the anisotropic conductive film 20 Layers may be stacked to arrange the conductive particles in the longitudinal direction. Since the anisotropic conductive film 20 is not intended for bonding, a curing agent may not be added. However, in order to obtain an appropriate viscosity of the anisotropic conductive film in the inspection step (B) to be described later, In order to facilitate the peeling of the conductive film, a curing agent may be added.

The thickness of the anisotropic conductive film 20 is preferably 50 to 1000%, more preferably 80 to 500% of the average particle diameter of the conductive particles 20a from the viewpoint of the ability of the probe to capture the conductive particles 20a , And still more preferably 90 to 200%. Since the anisotropic conductive film 20 is not intended for bonding, the conductive particles 20a may be exposed.

As the conductive particles 20a, conductive particles used in an anisotropic conductive film can be used. Among these conductive particles, it is preferable to use a conductive particle formed by forming a conductive layer on the surface of the resin particle. As the resin particles, particles such as epoxy resin, phenol resin, acrylic resin, acrylonitrile-styrene (AS) resin, benzoguanamine resin, divinylbenzene resin, styrene resin and the like can be used. Thereby, since the conductive particles 20a are compressed when the probe is pressed, the damage of the pad electrode 13a can be suppressed.

The average particle diameter of the conductive particles 20a is usually 1 to 30 占 퐉, preferably 2 to 20 占 퐉, more preferably 2.5 to 15 占 퐉, and is preferably smaller than the electrode width. This makes it possible to improve the trapping performance of the conductive particles between the probes and the electrodes.

The average particle density of the conductive particles 20a in the binder is preferably from 100 to 100,000 / mm2, more preferably from 500 to 80,000 / mm2 from the viewpoint of the connectivity. The conductive particles 20a may be independently independent from each other in the plane of the film, or arbitrarily disposed. When the conductive particles 20a are arranged in a predetermined positional relationship, the number density and the distance between conductive particles can be set according to the electrode size and layout. This makes it possible to cope with an electrode having a pitch of about 40 占 퐉, which is expected to be expected thereafter.

[Inspection process (B)]

2 is a cross-sectional view schematically showing an inspection step of pressing a probe on an electrode of a semiconductor device through an anisotropic conductive film. 2, in the inspection step (B), the probe 30 is pressed against the electrode of the semiconductor device through the anisotropic conductive film 20, and the electrical characteristics of the semiconductor device are inspected. Thereby, since the probes 30 do not directly contact the electrodes of the semiconductor device, damage to the electrodes and the like can be suppressed.

The probe 30 is a probe for inspecting electrical characteristics, and it is preferable that the probe 30 is erected perpendicular to the electrode surface as shown in FIG. The probe 30 may be arranged with a plurality of fins. The shape of the tip of the probe 30 is preferably a flat surface, a concave surface, a tooth surface or the like from the viewpoint of capturing the conductive particles 20a. The tip diameter of the probe 30 is not particularly limited as long as the trapping property of the conductive particles 20a is high and is preferably smaller than the width of the electrode when the electrode of the semiconductor device is not protruded. If it is projected, it may be larger than the width of the electrode in a range where the adjacent electrode is not short-circuited.

The inspection of the electrical characteristics is performed by measuring characteristics of, for example, a transistor, a resistor (electric resistance), a capacitor, and the like.

[Peeling step (C)]

In the peeling step (C), the anisotropic conductive film 20 is peeled from the semiconductor device. The peeling method is not particularly limited, but the peeling may be performed after the anisotropic conductive film 20 is cured. Further, the wafer may be cleaned after the anisotropic conductive film 20 is peeled off.

In addition, when the anisotropic conductive film 20 is not completely cured, the anisotropic conductive film 20 can be reused. Further, when the movement of the conductive particles by pressing the probe is small, it is possible to use the conductive particles in the same area in the film surface plural times.

[Modifications]

In the above-described electrical property inspection method, the anisotropic conductive film is attached to one surface of the wafer on which the semiconductor device is formed. However, the anisotropic conductive film may be attached to both surfaces of the wafer. That is, in the above-described adhering step, a first anisotropic conductive film containing conductive particles is attached to the electrode on the first surface of the semiconductor device, and a second anisotropic conductive film containing conductive particles in the electrode on the second surface of the semiconductor device In the inspection step described above, the first probe is pressed to the electrode on the first surface of the semiconductor device via the first anisotropic conductive film and the second probe is pressed on the second surface of the semiconductor device through the second anisotropic conductive film And the second probe may be pressed against the electrode.

3 is a cross-sectional view schematically showing a modification of an inspection process of pressing a probe on an electrode of a semiconductor device through an anisotropic conductive film. The semiconductor device shown as a modified example includes a wafer 15 having, for example, a penetrating electrode 15a, and an integrated circuit is formed on the wafer 15. [ Electrodes connected to both ends of the penetrating electrode 15a protrude from the wafer 15 and anisotropic conductive films 21 and 22 containing conductive particles 21a and 22a are attached to both surfaces of the wafer 15 . As a method for attaching the anisotropic conductive films 21 and 22, a laminate is exemplified.

It is preferable that the probes 31 and 32 are opposed to press the electrode on the first surface and the electrode on the second surface when examining the electrical characteristics. As a result, the wafer 15 is sandwiched by the probes 31 and 32, so that the positioning accuracy of the probes 31 and 32 can be improved.

By using the anisotropic conductive film as the connector in this way, it is possible to inspect electrical characteristics even in a chip or a wafer having a double-sided terminal structure such as a three-dimensional packaging package by TSV technology.

<2. Method of Manufacturing Semiconductor Device>

A manufacturing method of a semiconductor device to which the present technology is applied includes an integrated circuit forming step A1 for forming a semiconductor device on a wafer, a first inspection step B1 for inspecting electrical characteristics of the semiconductor device, a first inspection step B1 And a second inspection step (D1) for inspecting the electrical characteristics of the semiconductor device after the mounting step (C1). In the first inspection step (B1), the first inspection step (B1) Or the second inspection step (D1), an anisotropic conductive film containing conductive particles is attached to the electrode of the semiconductor device, and the probe is pressed against the electrode of the semiconductor device through the anisotropic conductive film to check the electrical characteristics .

A method of three-dimensionally mounting a chip of a semiconductor device formed by penetrating electrodes in a thickness direction of a wafer in a three-dimensional manner is described as follows: an integrated circuit forming step (A1), a first inspection step (B1) (B3), a mounting step (C1), and a second inspection step (D1) for inspecting the electrical characteristics of the penetrating electrode.

FIG. 4A is a cross-sectional view of a wafer on which a semiconductor device is formed on a first surface, FIG. 4B is a cross- (B) shows a cross section of a wafer on which an electrode connected to a penetrating electrode is formed on a second surface, (C) of Fig. 4 shows a cross section of the chip, and Fig. 4 (D) Sectional view of a three-dimensional package.

[Integrated Circuit Forming Step (A1)]

4A, in the integrated circuit forming step A1, the first wiring layer 52 including the semiconductor device is formed on the first surface of the wafer 51. As shown in FIG.

[First inspection step (B1)]

In the first inspection step (B1), a wafer test (circuit test) for inspecting electrical characteristics of the semiconductor device is performed. As the inspection method in the first inspection step, the above-described inspection method of the electrical characteristics can be used. The support substrate 54 is attached to the first surface of the wafer 51 as a support material and the thickness of the wafer 51 is made thinner on the second surface side. If the wafer 51 is abnormal in the wafer test, the wafer 51 is destroyed.

(Penetrating Electrode Forming Step (B2))

As shown in Fig. 4 (B), in the penetrating electrode forming step (B2), the penetrating electrode 51a is formed on the wafer 51. For example, a deep hole is formed in the wafer 51, a thin insulating film is coated on the wafer 51, and the inside is filled with a conductive material to form the penetrating electrode 51a. The through-hole electrode 51a is in electrical contact with the first surface side of the first wiring layer 52 in contact with the predetermined internal wiring of the integrated circuit.

An electrode connection wiring is formed on the second surface side of the penetrating electrode 51a to form a second wiring layer 53. [ In this example, the bump electrode 53a and the pad electrode 53b connected to the penetrating electrode 51a are formed. For example, an insulating film is formed on the electrode connecting wiring on the second surface side, a resist is applied, and exposure and RIE (Reactive Ion Etching) are performed. At the positions of the bump electrode 53a and the pad electrode 53b, The insulating film 5 is opened and the bump electrode 53a is formed by reflow.

[Penetrating Electrode Inspection Process (B3)]

In the penetrating electrode testing process, an anisotropic conductive film containing conductive particles is attached to the penetrating electrode, and the electrical characteristics of the penetrating electrode are inspected through the anisotropic conductive film. The penetrating electrode test is mainly a conduction test (open, short failure) of the penetrating electrode 51a, but the circuit test of the first inspecting step B1 may be performed through the penetrating electrode 51a. Also in the penetrating electrode test, the above-described inspection method of electric characteristics can be used. In this technique, since the anisotropic conductive film is used as a connector, it is possible to inspect electrical characteristics of any of the bump electrode 53a on the projection and the pad electrode 53b that does not protrude.

[Mounting step (C1)]

As shown in Fig. 4 (C), the semiconductor device which is normal in the first inspection step (B1) and the penetrating electrode inspection step (B3) is separated into chips and the supporting substrate 54 is peeled off.

Next, as shown in Fig. 4 (D), the chip of the semiconductor device is three-dimensionally mounted on the substrate. For example, a plurality of semiconductor device chips and thermosetting adhesives 62a, 62b and 62c may be stacked on the interposer substrate 61, and they may be packaged in a three-dimensional manner.

[Second Inspection Step (D1)]

Finally, the electrical characteristics of the three-dimensionally packaged package are inspected. Also in the final test, the above-mentioned inspection method of electric characteristics can be used. That is, an anisotropic conductive film is attached to the electrode of the interposer substrate 61, and the electrical characteristics of the semiconductor device are inspected through the anisotropic conductive film.

As described above, in all the tests of the first inspection step (B1), the penetrating electrode inspection step (B3), and the second inspection step (D1), the anisotropic conductive film can be used as a connector to inspect electrical characteristics. In addition, since these tests can be loaded on the auto-prober, the testing time and cost can be reduced. Further, in the conventional connector, only the inspection of the package level can be performed. However, in the present technology, inspection at the wafer level can be performed and pre-screening before the three-dimensional mounting or before the package can be performed.

Although the above-described semiconductor device manufacturing method has been described as a via last process, it may be a via first process. In the via first process, the penetrating electrode forming step (B2) and the penetrating electrode inspecting step (B3) are performed before the integrated circuit forming step (A1). In the penetrating electrode test described above, it is described that the test is performed in the wafer state. However, if the handling property is not deteriorated, the test can be performed in the chip state. In the present technology, since the anisotropic conductive film is relatively soft, chip breakage can be suppressed even in a chip state.

11: wafer
11a: penetrating electrode
12: first wiring layer
13: second wiring layer
13a: pad electrode
14: Support substrate
20, 21, 22: Anisotropic conductive film
20a: conductive particles
30, 31, 32: probes
51: wafer
51a: penetrating electrode
52: first wiring layer
53: second wiring layer
53a: bump electrode
53b: pad electrode
54: Support substrate
61: interposer substrate
62a, 62b and 62c: thermosetting adhesive

Claims (8)

An adhering step of adhering an anisotropic conductive film containing conductive particles to an electrode of a semiconductor device;
An inspection step of inspecting the electrical characteristics of the semiconductor device by pressing the probe through the anisotropic conductive film;
Wherein the electrical property is measured by the method. 2. The semiconductor device according to claim 1, wherein in the attaching step, a first anisotropic conductive film containing conductive particles is attached to an electrode on a first surface of the semiconductor device, and conductive particles A second anisotropic conductive film containing a first anisotropic conductive film,
In the inspection step, the first probe is pressed to the electrode on the first surface of the semiconductor device through the first anisotropic conductive film, and the second probe is pressed on the electrode on the second surface of the semiconductor device through the second anisotropic conductive film 2 A method of inspecting electrical characteristics by pressing a probe. The method according to claim 1 or 2, further comprising a peeling step of peeling off the anisotropic conductive film from the semiconductor device after the inspection step. 3. The method according to claim 1 or 2, wherein the semiconductor device is formed on a wafer. The method for inspecting electrical characteristics according to claim 1 or 2, wherein the conductive particles are formed by forming a conductive layer on the surface of the resin particles. The inspection method according to claim 1 or 2, wherein an average particle diameter of the conductive particles is smaller than a width of the electrode. An integrated circuit forming step of forming a semiconductor device on a wafer,
A first inspection step of inspecting electrical characteristics of the semiconductor device;
A mounting step of mounting a chip of a semiconductor device which is normal in the first inspection step onto a substrate;
And a second inspection step of inspecting electrical characteristics of the semiconductor device after the mounting step,
Wherein at least one of the first inspecting step and the second inspecting step is carried out by attaching an anisotropic conductive film containing conductive particles to an electrode of the semiconductor device and pressing the probe to the electrode of the semiconductor device through the anisotropic conductive film, Of the semiconductor device. The method of manufacturing a semiconductor device according to claim 7, further comprising: a through electrode forming step of forming a through electrode on the wafer;
Further comprising a penetrating electrode inspection step of inspecting electrical characteristics of the penetrating electrode,
In the mounting step, a chip of a semiconductor device which is normal in the first inspection step and the penetrating electrode inspection step is three-dimensionally mounted on a substrate,
Wherein the anisotropic conductive film containing conductive particles is attached to the penetrating electrode and the probe is pressed against the penetrating electrode through the anisotropic conductive film to inspect electrical characteristics.

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