JP2014178212A - Semiconductor testing device and semiconductor testing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor testing device capable of preventing a surface of an electrode from being damaged without using a probe having a special structure.SOLUTION: The semiconductor testing device tests a semiconductor element by energizing the semiconductor element via a probe, an anisotropic conductive member and an electrode, in a state where a tip of the probe is in contact with the surface of the anisotropic conductive member attached to the surface of the electrode of the semiconductor element.

Description

  The present invention relates to a semiconductor test apparatus and a semiconductor test method.

  2. Description of the Related Art Conventionally, a semiconductor test apparatus including a probe having a pointed tip is known. In such a conventional semiconductor test apparatus, the semiconductor element is energized through the probe and the electrode while the tip of the probe is in contact (point contact) with the surface of the electrode of the semiconductor element to be tested. The semiconductor device is tested by measuring the electrical characteristics of the semiconductor device.

  However, in the conventional semiconductor test apparatus as described above, since the tip of the probe having a pointed shape contacts the surface of the electrode of the semiconductor element to be tested (point contact), the electrode surface is easily damaged by the probe. There is an inconvenience.

  Therefore, in order to eliminate the inconveniences as described above, probe terminals that can suppress the surface of the electrode of the semiconductor element to be tested from being damaged by the probe have been proposed (for example, Patent Documents). 1).

  Patent Document 1 discloses a probe terminal having a tip portion configured to be in surface contact with the surface of an electrode of a semiconductor element to be tested. According to this probe terminal, since the tip of the probe terminal is in surface contact with the surface of the electrode of the semiconductor element to be tested without point contact, the surface of the electrode is suppressed from being damaged by the probe terminal.

  However, in the configuration disclosed in Patent Document 1, a probe having a special structure that makes surface contact with the surface of the electrode is used in order to prevent the surface of the electrode of the semiconductor element to be tested from being damaged. Therefore, there is a problem that the structure of the probe is complicated.

  The present invention has been made to solve the above-described problems, and one object of the present invention is to suppress damage to the electrode surface without using a probe having a special structure. It is an object to provide a semiconductor test apparatus and a semiconductor test method capable of satisfying the requirements.

  In order to achieve the above object, a semiconductor test apparatus according to the present invention is a semiconductor test apparatus for testing a semiconductor element having an electrode, and has a probe having a pointed tip and a surface of the electrode of the semiconductor element. A sticking means for sticking a member having anisotropic conductivity, and the probe, foreign material, with the tip of the probe in contact with the surface of the member having anisotropic conductivity attached to the surface of the electrode of the semiconductor element. The semiconductor element is tested by energizing the semiconductor element through a member having electrode conductivity and an electrode.

  In the present invention, it is possible to suppress the surface of the electrode from being damaged without using a probe having a special structure.

FIG. 1 is a diagram schematically showing the overall configuration of the semiconductor test apparatus according to the present embodiment. FIG. 2 is a top view of a semiconductor element to be tested by the semiconductor test apparatus according to the present embodiment. FIG. 3 is a schematic diagram for explaining a semiconductor test method using the semiconductor test apparatus according to the present embodiment. FIG. 4 is a schematic diagram for explaining a semiconductor test method using the semiconductor test apparatus according to the present embodiment.

  Hereinafter, embodiments will be described with reference to the drawings.

  First, the configuration of the semiconductor test apparatus 100 according to the present embodiment will be described with reference to FIGS. The semiconductor test apparatus 100 is an apparatus that tests whether a semiconductor device operates normally by energizing a semiconductor device such as an LSI (Large Scale Integration).

  As shown in FIG. 1, a test unit 10 for testing a semiconductor element 200 (see FIG. 2) and an elastic member 50 (see FIGS. 3 and 4) to be described later are attached to the semiconductor element 200 to be tested. And a sticking part 20 for doing this. The pasting unit 20 is an example of a “pasting means”.

  As shown in FIG. 1, the test unit 10 includes a probe 1 including a mounting unit 1 on which a semiconductor element 200 (see FIG. 2) to be tested is mounted and a pointed tip 2 a. Card 3. A plurality of probes 2 are provided so as to respectively correspond to a plurality of electrode pads 202 (see FIG. 2) described later of the semiconductor element 200. The semiconductor test apparatus 100 is connected to a control apparatus 300 such as a PC (Personal Computer). Thereby, the semiconductor test apparatus 100 is configured to operate based on the control command from the control apparatus 300.

  As shown in FIG. 2, the semiconductor element 200 includes a silicon substrate 201 and a metal electrode pad 202 formed on the surface of the silicon substrate 201. A plurality of electrode pads 202 are formed on the surface of the silicon substrate 201 at intervals. The electrode pad 202 is an example of an “electrode”.

  Here, in this embodiment, as shown in FIG. 3, when the semiconductor test apparatus 100 performs a test of the semiconductor test apparatus 100, first, the surface of the electrode pad 202 of the semiconductor element 200 is used by using the pasting portion 20. Further, the elastic member 50 having anisotropic conductivity is attached. The elastic member 50 is made of an adhesive such as an anisotropic conductive film or an anisotropic conductive paste including a plurality of conductive particles 50a. The thickness D1 of the elastic member 50 is greater than the thickness D2 of the electrode pad 202. As an example, the conductive particles 50a have a structure in which a nickel layer, a gold plating layer, and an insulating layer overlap in this order from the inside to the outside. In consideration of the relationship with the scale of pressing by the probe 2, the diameter (particle diameter) of the conductive particles 50 a suitable for the test of the semiconductor element 200 is about 5 μm or less.

  In the present embodiment, as shown in FIG. 4, the semiconductor test apparatus 100 attaches the elastic member 50 to the surface of the electrode pad 202 as described above, and then attaches the probe card 3 of the test unit 10 to the semiconductor element 200. The tip 2a of the probe 2 is configured to contact the surface of the elastic member 50 by moving in the approaching direction. As a result, the elastic member 50 is pressed by the distal end portion 2a of the probe 2, and the electrode pad 202 and the probe 2 are interposed via the conductive particles 50a included in the pressed portion of the elastic member 50 (see the black circle in FIG. 4). Are electrically connected to each other. Note that the conductive particles 50 a (see white circles in FIG. 4) included in the portion where the elastic member 50 is not pressed do not contribute to conduction between the electrode pad 202 and the probe 2.

  Further, in the present embodiment, the semiconductor test apparatus 100 is configured such that the semiconductor 2 is interposed between the probe 2, the elastic member 50, and the electrode pad 202 with the tip 2 a of the probe 2 being in contact with the surface of the elastic member 50 as described above. By energizing the element 200, the semiconductor element 200 is configured to test whether or not it operates normally. The semiconductor test apparatus 100 also includes an energizing unit for energizing as described above, a communication unit for communicating with the control apparatus 300, and the like.

  Next, a semiconductor test method using the semiconductor test apparatus 100 according to the present embodiment will be described with reference to FIGS.

  First, as shown in FIG. 1, the semiconductor element 200 having the electrode pad 202 is placed on the placement unit 1 of the test unit 10. In this state, the tip 2 a of the probe 2 of the probe card 3 is not in contact with the electrode pad 202 of the semiconductor element 200.

  Next, as shown in FIG. 3, an anisotropic conductive film or anisotropic conductive film including a plurality of conductive particles 50 a is formed on the upper surface of the electrode pad 202 of the semiconductor element 200 using the pasting portion 20 of the test portion 10. An elastic member 50 made of an adhesive such as a paste is attached. In this state, the tip 2 a of the probe 2 of the probe card 3 of the test unit 10 is not in contact with the surface of the elastic member 50 attached to the surface of the electrode pad 202 of the semiconductor element 200.

  Next, as shown in FIG. 4, the probe card 3 of the test unit 10 is moved in a direction approaching the semiconductor element 200, and the tip 2 a of the probe 2 of the probe card 3 is moved to the surface of the electrode pad 202 of the semiconductor element 200. It is made to contact with the surface of the elastic member 50 affixed to. As a result, the probe 2 is bent between the probe card 3 and the elastic member 50. As a result, the elastic member 50 is pressed by the distal end portion 2a of the probe 2, and the electrode pad 202 and the probe 2 are interposed via the conductive particles 50a included in the pressed portion of the elastic member 50 (see the black circle in FIG. 4). Are electrically connected to each other.

  Then, the semiconductor element 200 is energized through the probe 2, the elastic member 50, and the electrode pad 202 with the tip 2 a of the probe 2 in contact with the surface of the elastic member 50 (see FIG. 4). Thereby, the electrical characteristics of the semiconductor element 200 are measured, and it is determined whether or not the semiconductor element 200 operates normally.

  The test of the semiconductor element 200 is performed as described above.

  Here, an example of a method (sticking method) for sticking the elastic member 50 having anisotropic conductivity to the surface of the electrode pad 202 of the semiconductor element 200 will be described.

  First, a tape having an anisotropic conductive film layer (layer constituting the elastic member 50) affixed on the base film is drawn out and cut by a length necessary for the affixing. And the cut | disconnected tape is moved to a predetermined sticking place (the surface of the electrode pad 202 of the semiconductor element 200). Then, the tape is pressed and pasted to the surface of the electrode pad 202 using a predetermined crimping member (a member capable of crimping the entire tape at once). Then, the base film is peeled from the tape attached to the surface of the electrode pad 202. As a result, the anisotropic conductive film layer constituting the elastic member 50 is attached to the surface of the electrode pad 202.

  In the above process, the diameter (particle size) of the conductive particles 50a included in the anisotropic conductive film layer (elastic member 50), the density of the conductive particles 50a in the anisotropic conductive film layer, and the like are reduced. It is possible to make the anisotropic conductive film layer function as an insulating layer by setting or adjusting the amount of tape applied or the pressing force of the crimping member. That is, this anisotropic conductive film layer functions as a conductive film only when it is pressed by the tip 2 a of the probe 2 during the test of the semiconductor element 200. Further, in the above process, the elastic member 50 can be disposed (applied) on the upper surface of the electrode pad 202 by feeding an anisotropic conductive film or the like using a roller or the like.

  In the present embodiment, as described above, the semiconductor test apparatus 100 includes the attaching unit 20 that attaches the elastic member 50 having anisotropic conductivity to the surface of the electrode pad 202 of the semiconductor element 200. Then, the semiconductor test apparatus 100 has the probe 2, the elastic member 50, and the electrode pad 202 in a state where the distal end portion 2 a of the probe 2 is in contact with the surface of the elastic member 50 attached to the surface of the electrode pad 202 of the semiconductor element 200. The semiconductor element 200 is configured to be tested by energizing the semiconductor element 200 via the. Thereby, even if the tip 2a of the probe 2 has a sharp shape, the sharp tip 2a directly contacts the surface of the electrode pad 202 of the semiconductor element 200 to be tested (point contact). Therefore, the surface of the electrode pad 202 can be prevented from being damaged by the probe 2. As a result, the surface of the electrode pad 202 can be prevented from being damaged without using a probe having a special structure that makes surface contact with the surface of the electrode pad 202. In addition, by configuring the elastic member 50 to have anisotropic conductivity, the elastic member 50 can be used as a buffer layer between the electrode pad 202 and the probe 2 while being connected to other terminals that are important during the test. Insulation can be reliably obtained by the elastic member 50.

  In the present embodiment, as described above, the elastic member 50 having anisotropic conductivity and elasticity is used as a member to be attached to the surface of the electrode pad 202. Thereby, unlike the case where a hard member which does not have elasticity is used as a member stuck on the surface of electrode pad 202, it can control that tip part 2a of probe 2 and a hard member contact, and are mutually damaged. .

  In the present embodiment, as described above, the elastic member 50 attached to the surface of the electrode pad 202 is made of an adhesive made of an anisotropic conductive film or an anisotropic conductive paste. This effectively suppresses the pointed tip 2a of the probe 2 from coming into direct contact (point contact) due to the elastic member 50 being peeled off from the surface of the electrode pad 202. it can.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the above-described embodiment, as an example of using a member having anisotropic conductivity and elasticity as a member to be attached to the surface of the electrode pad of the semiconductor element, the present invention is not limited to this. In the present invention, the member attached to the surface of the electrode pad of the semiconductor element may be a member that does not have elasticity as long as it is a member having anisotropic conductivity.

  Similarly, in the above-described embodiment, an example in which an adhesive having anisotropic conductivity is used as a member to be attached to the surface of the electrode pad of the semiconductor element is shown, but the present invention is not limited to this. In the present invention, the member attached to the surface of the electrode pad of the semiconductor element may not be an adhesive as long as it is a member having anisotropic conductivity.

2 Probe 2a Tip 20 Affixing part (applying means)
DESCRIPTION OF SYMBOLS 50 Elastic member 100 Semiconductor testing apparatus 200 Semiconductor element 202 Electrode pad (electrode)

JP 2012-83288 A

Claims (6)

A semiconductor test apparatus for testing a semiconductor element having an electrode,
A probe having a pointed tip, and
A pasting means for pasting a member having anisotropic conductivity on the surface of the electrode of the semiconductor element;
The probe, the member having anisotropic conductivity, and the electrode in a state where the tip portion of the probe is in contact with the surface of the member having anisotropic conductivity affixed to the surface of the electrode of the semiconductor element A semiconductor test apparatus configured to test the semiconductor element by energizing the semiconductor element via a semiconductor device.   The semiconductor test apparatus according to claim 1, wherein the attaching unit is configured to attach a member having anisotropic conductivity and elasticity to a surface of the electrode of the semiconductor element.   The semiconductor test apparatus according to claim 1, wherein the attaching unit is configured to attach an adhesive having anisotropic conductivity to a surface of the electrode of the semiconductor element.   The semiconductor test apparatus according to claim 3, wherein the attaching unit is configured to attach an anisotropic conductive film as the adhesive to the surface of the electrode of the semiconductor element.   The semiconductor test apparatus according to claim 3, wherein the attaching unit is configured to attach an anisotropic conductive paste as the adhesive to the surface of the electrode of the semiconductor element. A semiconductor test method for testing a semiconductor element having an electrode using a semiconductor test apparatus provided with a probe having a pointed tip.
A step of attaching a member having anisotropic conductivity to the surface of the electrode of the semiconductor element;
Contacting the tip of the probe with the surface of the member having anisotropic conductivity;
And a step of energizing the semiconductor element through the probe, the member having anisotropic conductivity, and the electrode.

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