TWI713274B - A inspection method for electric characteristics and a method for manufacturing semiconductor device - Google Patents

Abstract

The present invention provides an electrical characteristic inspection method that can inspect the electrical characteristics of the semiconductor device even when the electrode of the semiconductor device does not protrude. The method for inspecting electrical characteristics has: an attaching step (A), which is to attach an anisotropic conductive adhesive film containing conductive particles to an electrode of a semiconductor device; and an inspection step (B), which is an anisotropy The conductive adhesive film presses the probe against the electrode of the semiconductor device to check the electrical characteristics of the semiconductor device. In the inspection step (B), the pad electrode (13a) of the semiconductor device and the probe (30) are connected through the conductive particles (20a) of the anisotropic conductive adhesive film (20).

Description

Method for inspecting electrical characteristics and method for manufacturing semiconductor device

This technology relates to a method for inspecting the electrical characteristics of semiconductor devices formed on wafers, chips, etc. This application is based on Japanese Patent Application No. 2016-079852 filed in Japan on April 12, 2016 and claims its priority, and this application is applied to this application by reference.

Conventionally, the electrical characteristics evaluation of semiconductor devices at the wafer level and the wafer level is performed by directly contacting the probes with the pads or bumps (for example, refer to Patent Document 1). According to this method, although the inspection before packaging or before the three-dimensional installation can be performed, the electrodes may be damaged due to direct contact with the probes, etc.; after the inspection, the qualified products may be damaged due to the inspection after installation. And the situation of substandard products.

In this regard, it is known in QFP (Quad Flat Package), BGA (Ball grid array, ball grid array) and other packaging equipment to evaluate the electrical characteristics of the package solder bumps or lead pins and check Between circuit boards, an anisotropic conductive elastomer connector with gold-plated metal wires regularly embedded in silicone rubber is used (for example, refer to Patent Document 2).

Patent Document 1: Japanese Patent Laid-Open No. 2009-042008

Patent Document 2: Japanese Patent Laid-Open No. 08-055648

However, in the elastomer connector described in Patent Document 2, for example, when the electrode does not protrude like a pad like an opening in an insulating layer, it is difficult to connect to a semiconductor device, and it is difficult to inspect the electrical characteristics of the semiconductor device. .

In order to solve the above-mentioned problems, the present technology provides an electrical characteristic inspection method that can inspect the electrical characteristics of the semiconductor device even when the electrode of the semiconductor device does not protrude.

After careful research, the inventors of this technology found that by using anisotropic conductive adhesive film containing conductive particles as a connector, even if the electrode of the semiconductor device does not protrude, the semiconductor device can be used. Inspection of electrical characteristics.

That is, the method for inspecting electrical characteristics of the present technology includes: an attaching step, which is to attach an anisotropic conductive adhesive film containing conductive particles to an electrode of a semiconductor device; and an inspection step, which is an anisotropic conductive film containing conductive particles. The glue film presses the probe against the electrode of the semiconductor device to check the electrical characteristics of the semiconductor device.

Furthermore, the manufacturing method of the semiconductor device of the present technology includes: an integrated circuit forming step, which is to form a semiconductor device on a wafer; a first inspection step, which is to check the electrical characteristics of the above-mentioned semiconductor device; 1 The chip of the normal semiconductor device in the inspection step is mounted on the substrate; and the second inspection step is to inspect the semiconductor after the above mounting step Electrical characteristics of the body device; in at least one of the first inspection step or the second inspection step, an anisotropic conductive adhesive film containing conductive particles is attached to the electrode of the semiconductor device, and the anisotropic conductive adhesive is interposed Film, the probe is pressed against the electrode of the above-mentioned semiconductor device to check the electrical characteristics.

According to the present technology, since the probe is pressed against the electrode of the semiconductor device through the anisotropic conductive adhesive film containing conductive particles, electrical characteristics inspection can be performed even when the electrode of the semiconductor device does not protrude.

11: Wafer

11a: Through electrode

12: The first wiring layer

13: 2nd wiring layer

13a: Pad electrode

14: Support substrate

20, 21, 22: Anisotropic conductive adhesive film

20a: conductive particles

30, 31, 32: Probe

51: Wafer

51a: Through electrode

52: The first wiring layer

53: 2nd wiring layer

53a: bump electrode

53b: Pad electrode

54: Support substrate

61: Interposer substrate

62a, 62b, 62c: thermosetting adhesive

FIG. 1 is a cross-sectional view schematically showing a step of attaching an anisotropic conductive adhesive film to an electrode of a semiconductor device formed on a wafer.

2 is a cross-sectional view schematically showing an inspection step of pressing a probe against an electrode of a semiconductor device through an anisotropic conductive adhesive film.

3 is a cross-sectional view schematically showing a modified example of the inspection procedure of pressing the probe against the electrode of the semiconductor device via the anisotropic conductive adhesive film.

FIG. 4 is a cross-sectional view schematically showing an aspect of a method of manufacturing a semiconductor device.

Hereinafter, embodiments of the present technology will be described in detail in the following order.

1. Inspection method of electrical characteristics

2. Manufacturing method of semiconductor device

<1. Inspection method of electrical characteristics>

The electrical characteristics inspection method using this technology includes: attaching step (A), which is based on the semiconductor The electrode of the body device is attached to the anisotropic conductive adhesive film containing conductive particles; and the inspection step (B) is to press the probe against the electrode of the semiconductor device through the anisotropic conductive adhesive film to inspect the semiconductor device Electrical characteristics. Thereby, since the electrode and the probe of the semiconductor device are connected through the conductive particles of the anisotropic conductive adhesive film, the electrical characteristics of the semiconductor device can be inspected.

The semiconductor device can be any of a wafer level formed on a wafer, a singulated wafer level, and a package level after packaging. Hereinafter, the method for inspecting the electrical characteristics of the semiconductor device at the wafer level in which the through electrode penetrates through the thickness direction of the wafer will be described in the attaching step (A), the inspection step (B), and the inspection step (B). The semiconductor device peels off the anisotropic conductive adhesive film (C).

[Attaching step (A)]

FIG. 1 is a cross-sectional view schematically showing a step of attaching an anisotropic conductive adhesive film to an electrode of a semiconductor device formed on a wafer. As shown in FIG. 1, in the attaching step (A), an anisotropic conductive adhesive film 20 containing conductive particles 20a is attached to the electrode of the semiconductor device.

The semiconductor device shown as an example includes, for example, a wafer 11 having a through electrode 11a, a first wiring layer 12 where an integrated circuit is formed, and a second wiring layer 13 having a pad electrode 13a. Furthermore, on the side of the first wiring layer 12 of the semiconductor device, a support substrate 14 is provided as a support material when the wafer 11 is thinned.

The wafer 11 is, for example, a silicon substrate, and has a through electrode 11a penetrating through the thickness direction of the substrate. The through electrode 11a is also called TSV (Through Silicon Via), one end is electrically connected to the integrated circuit, and the terminal of the integrated circuit is led out to the second surface side.

The first wiring layer 12 is formed on the first surface (so-called surface) side of the wafer 11, and has an integrated circuit connected to one end of the through electrode 11a. Integrated circuit is accumulated on wafer 11 For example, it is made of elements with functions such as transistors, impedances (resistors), and capacitors.

The second wiring layer 13 is formed on the second surface (so-called back surface) side of the wafer 11, and has a pad electrode 13a electrically connected to the other end of the through electrode 11a. The pad electrode 13a is closer to the inner side than the surface of the second wiring layer 13 due to the opening of the insulating film.

The anisotropic conductive adhesive film 20 is formed by dispersing conductive particles 20a in an adhesive. The adhesive is not particularly limited, and in the inspection step (B) described later, a resin that flows appropriately by the pressing of the probe can be used. Examples of such adhesives include epoxy resins, acrylic resins, and silicone rubber systems. Furthermore, for convenience of description, the anisotropic conductive adhesive film 20 shown in FIG. 1 is a single layer containing conductive particles 20a, but it is not limited to this. For example, a layer containing conductive particles 20a may be laminated. The conductive particles are arranged in the vertical direction. Moreover, since the anisotropic conductive adhesive film 20 is not used for bonding, no curing agent is required, but in order to obtain an appropriate viscosity of the anisotropic conductive adhesive film in the inspection step (B) described later, or in the peeling step described later (C) It is convenient to peel off anisotropic conductive adhesive film, and curing agent can also be formulated.

Moreover, the thickness of the anisotropic conductive adhesive film 20, from the viewpoint of the probe’s ability to capture the conductive particles 20a, is preferably 50~1000% of the average particle diameter of the conductive particles 20a, and 80~500% is particularly preferred. , 90~200% is very good. Since the anisotropic conductive adhesive film 20 is not used for bonding, the conductive particles 20a may be exposed.

As the conductive particles 20a, the conductive particles used in the anisotropic conductive adhesive film can be used. Among such conductive particles, it is preferable to use a resin particle with a conductive layer formed on the surface. As the resin particles, for example, particles of epoxy resin, phenol resin, acrylic resin, acrylonitrile styrene (AS) resin, benzo melamine resin, divinylbenzene resin, styrene resin, etc. can be used. Thereby, the conductive particles 20a are compressed when the probe is pressed, so that the pad electrode 13a can be suppressed damage.

The average particle diameter of the conductive particles 20a is usually 1-30 μm, particularly preferably 2-20 μm, and even more preferably 2.5-15 μm, and it is better to be smaller than the width of the electrode. Thereby, it is possible to improve the capturing properties of the conductive particles between the probe and the electrode.

Regarding the average particle density in the binder of the conductive particles 20a, from the viewpoint of connectivity, it is preferably 100 to 100,000 particles/mm ² , and particularly preferably 500 to 80,000 particles/mm ² . In the plan view of the film, the conductive particles 20a may be independent of each other, and may be arbitrarily arranged. When the conductive particles 20a are arranged in a predetermined positional relationship, the number density or the distance between the conductive particles can be set according to the size or arrangement of the electrodes. In this way, it can also correspond to electrodes with a pitch of about 40 μm that are expected in the future.

[Check Step (B)]

2 is a cross-sectional view schematically showing an inspection step of pressing a probe against an electrode of a semiconductor device through an anisotropic conductive adhesive film. As shown in FIG. 2, in the inspection step (B), the probe 30 is pressed against the electrode of the semiconductor device via the anisotropic conductive adhesive film 20 to inspect the electrical characteristics of the semiconductor device. Thereby, since the probe 30 does not directly contact the electrode of the semiconductor device, damage to the electrode and the like can be suppressed.

The probe 30 is a probe used to check electrical characteristics. As shown in FIG. 2, it is better to stand vertically with respect to the electrode surface. The probe 30 can also be arranged with a plurality of pins. Regarding the tip shape of the probe 30, from the viewpoint of capturing the conductive particles 20a, a flat surface, a concave surface, a serrated surface, or the like is preferable. The diameter of the tip of the probe 30 is not particularly limited as long as the conductive particles 20a have high trapping properties. Although the electrode of the semiconductor device does not protrude, it is better to be smaller than the width of the electrode, but for semiconductor devices When the electrode is protruding, the adjacent electrode will not be short-circuited The inside can also be larger than the width of the electrode.

The inspection of electrical characteristics is carried out by measuring characteristics such as transistors, impedance (resistance), capacitors, etc.

[Peeling step (C)]

In the peeling step (C), the anisotropic conductive adhesive film 20 is peeled from the semiconductor device. The peeling method is not particularly limited, and it may be peeled after curing the anisotropic conductive adhesive film 20. Moreover, the wafer may be cleaned after peeling off the anisotropic conductive adhesive film 20.

Furthermore, when the anisotropic conductive adhesive film 20 is not completely cured, the anisotropic conductive adhesive film 20 can be reused. In addition, when the movement of the conductive particles caused by the pressing of the probe is small, it can be used multiple times in the same area on the film surface.

[Modifications]

In the above-mentioned inspection method of electrical characteristics, an anisotropic conductive adhesive film is attached to one side of a wafer on which a semiconductor device is formed, but an anisotropic conductive adhesive film can also be attached to both sides of the wafer. That is, in the above attaching step, the first anisotropic conductive adhesive film containing conductive particles may be attached to the electrode on the first side of the semiconductor device, and the electrode on the second side of the semiconductor device may contain conductive For the second anisotropic conductive adhesive film of sexual particles, in the above inspection step, the first probe may be pressed against the electrode on the first side of the semiconductor device through the first anisotropic conductive adhesive film, and The second anisotropic conductive adhesive film presses the second probe against the electrode on the second surface of the semiconductor device.

3 is a cross-sectional view schematically showing a modified example of the inspection procedure of pressing the probe against the electrode of the semiconductor device via the anisotropic conductive adhesive film. The semiconductor device shown as a modified example includes, for example, a wafer 15 including a through electrode 15 a, and an integrated circuit is formed on the wafer 15. The electrodes connected to both ends of the through electrode 15a protrude from the wafer 15 and are respectively located on both sides of the wafer 15 Anisotropic conductive adhesive films 21, 22 containing conductive particles 21a, 22a are attached. As a method of attaching the anisotropic conductive adhesive films 21 and 22, lamination can be cited.

When inspecting electrical characteristics, it is better to make the probes 31 and 32 face each other and press the electrodes on the first surface and the electrodes on the second surface. In this way, the wafer 15 is clamped by the probes 31 and 32, so that the positioning accuracy of the probes 31 and 32 can be improved.

By using anisotropic conductive adhesive film as a connector in this way, even a chip or wafer with a double-sided terminal structure such as a three-dimensional mounting package using TSV technology can be inspected for electrical characteristics.

<2. Manufacturing method of semiconductor device>

The manufacturing method of a semiconductor device to which this technology is applied includes: an integrated circuit forming step (A1), which is used to form a semiconductor device on a wafer; a first inspection step (B1), which is to check electrical characteristics of the semiconductor device; and a mounting step (C1) ), which is to mount the chip of the normal semiconductor device in the first inspection step (B1) on the substrate; and the second inspection step (D1), which is to inspect the electrical characteristics of the semiconductor device after the mounting step (C1); first In at least one of the inspection step (B1) or the second inspection step (D1), an anisotropic conductive adhesive film containing conductive particles is attached to the electrode of the semiconductor device, and the probe is placed through the anisotropic conductive adhesive film Press on the electrode of the semiconductor device to check the electrical characteristics.

Hereinafter, regarding the three-dimensional mounting method of a semiconductor device chip with through electrodes formed through the thickness direction of the wafer on a substrate, the integrated circuit formation step (A1), the first inspection step (B1), and the wafer The through electrode forming step (B2) for forming the through electrode, the through electrode inspection step (B3) for inspecting the electrical characteristics of the through electrode, the mounting step (C1), and the second inspection step (D1) will be described.

Fig. 4 schematically shows a method of manufacturing a semiconductor device to which this technology is applied A cross-sectional view of one form, FIG. 4(A) shows a cross-section of a wafer with semiconductor devices formed on the first surface, and FIG. 4(B) shows a cross-section of a wafer with electrodes connected to through electrodes formed on the second surface, Fig. 4(C) shows a cross-section of a singulated wafer, and Fig. 4(D) shows a cross-sectional view of a three-dimensional mounting body in which the wafers are laminated.

[Integrated Circuit Formation Step (A1)]

As shown in FIG. 4(A), in the integrated circuit forming step (A1), a first wiring layer 52 including a semiconductor device is formed on the first surface of the wafer 51.

[The first inspection step (B1)]

In the first inspection step (B1), a wafer test (circuit test) for inspecting the electrical characteristics of the semiconductor device is performed. As the inspection method in the first inspection step, the above-mentioned electrical characteristics inspection method can be used. When it is normal in the wafer test, a support substrate 54 as a support material is attached to the first surface of the wafer 51, and the thickness of the wafer 51 is reduced from the second surface side. When the wafer test is abnormal, the wafer 51 is discarded.

[Through electrode formation step (B2)]

As shown in FIG. 4(B), in the through electrode forming step (B2), the through electrode 51a is formed on the wafer 51. For example, a deep hole is formed in the wafer 51, and a thin insulating film is coated inside the wafer 51, and the through electrode 51a is formed by filling the inside with a conductive material. The first surface side of the through electrode 51a is in contact with a predetermined internal wiring of the integrated circuit of the first wiring layer 52 to form an electrical connection.

Furthermore, an electrode connection wiring is formed on the second surface side of the through electrode 51a, and a second wiring layer 53 is formed. In this example, the bump electrode 53a and the pad electrode 53b connected to the through electrode 51a are formed. For example, an insulating film is formed on the electrode connection wiring on the second surface side, a photoresist is applied, and exposure and RIE (Reactive Ion Etching) processing are performed on the bump electrode 53a. The insulating film 5 is opened in the area of the pad electrode 53b and the bump electrode 53a is formed by reflow.

[Through electrode inspection procedure (B3)]

In the through electrode inspection step, an anisotropic conductive adhesive film containing conductive particles is attached to the through electrode, and the electrical characteristics of the through electrode are inspected through the anisotropic conductive adhesive film. The through electrode test is mainly a continuity test (open circuit, defective short circuit) of the through electrode 51a, but the circuit test of the first inspection step (B1) can also be performed through the through electrode 51a. In the penetration electrode test, the above-mentioned electrical characteristics inspection method can also be used. In this technology, since an anisotropic conductive adhesive film is used as a connector, both the bump electrode 53a in the shape of a protrusion and the pad electrode 53b that is not protruding can be inspected for electrical characteristics.

[Installation steps (C1)]

As shown in FIG. 4(C), the semiconductor device that was normal in the first inspection step (B1) and the through electrode inspection step (B3) is singulated into wafers, and the support substrate 54 is peeled off.

Then, as shown in FIG. 4(D), the three-dimensional chip of the semiconductor device is mounted on the substrate. For example, a plurality of semiconductor device wafers and thermosetting adhesives 62a, 62b, 62c can be stacked on the interposer substrate 61 and crimped at one time, thereby performing three-dimensional mounting.

[Second inspection step (D1)]

Finally, check the electrical characteristics of the packaged product after the three-dimensional installation. In the final test, the above-mentioned electrical characteristics inspection method can also be used. That is, an anisotropic conductive adhesive film is attached to the electrode of the interposer substrate 61, and the electrical characteristics of the semiconductor device are inspected through the anisotropic conductive adhesive film.

As explained above, in all tests in the first inspection step (B1), through electrode inspection step (B3), and second inspection step (D1), the anisotropic conductive adhesive film can be used as a connector to check electrical characteristics . Moreover, these tests can be loaded into an autoprobe, so the test time and cost can be reduced. Moreover, in the conventional connector, only package-level inspection can be performed. In this technology, wafer-level inspection can be performed, and pre-screening before three-dimensional installation or packaging can be performed.

Furthermore, in the above-mentioned manufacturing method of the semiconductor device, the description is made by the via-last process, but it can also be set as the via-first process. In the first drilling procedure, the through electrode formation step (B2) and the through electrode inspection step (B3) are performed before the integrated circuit formation step (A1). In addition, in the above-mentioned through electrode test, the case where it is performed in the wafer state is described, but it can also be performed in the wafer state as long as it does not affect the operability. In this technology, the anisotropic conductive adhesive film is relatively soft, so it can prevent chip damage even in the state of the chip.

11: Wafer

11a: Through electrode

12: The first wiring layer

13: 2nd wiring layer

13a: Pad electrode

14: Support substrate

20: Anisotropic conductive adhesive film

20a: conductive particles

30: Probe

Claims (9)

A method for inspecting electrical characteristics, comprising: an attaching step of attaching an anisotropic conductive adhesive film containing conductive particles to an electrode of a semiconductor device; and an inspection step of attaching the anisotropic conductive adhesive film through the anisotropic conductive adhesive film The probe is pressed against the electrode of the semiconductor device to compress the conductive particles to inspect electrical characteristics; after the inspection step, there is a peeling step of peeling the anisotropic conductive adhesive film from the semiconductor device. For example, the method for inspecting electrical characteristics of the first item of the scope of patent application, wherein, in the attaching step, a first anisotropic conductive adhesive film containing conductive particles is attached to the electrode on the first surface of the semiconductor device, and A second anisotropic conductive adhesive film containing conductive particles is attached to the electrode on the second surface of the semiconductor device. In the inspection step, the first probe is pressed against the first anisotropic conductive adhesive film via the first anisotropic conductive adhesive film. The electrode on the first surface of the semiconductor device compresses conductive particles, and the second probe is pressed against the electrode on the second surface of the semiconductor device via the second anisotropic conductive adhesive film to compress the conductive particles. For example, the inspection method of electrical characteristics in the first item of the scope of patent application, wherein the thickness of the anisotropic conductive adhesive film is 50~1000% of the average particle size of the conductive particles contained in it. A method of manufacturing a semiconductor device, comprising: an integrated circuit forming step, which is used to form a semiconductor device on a wafer; a first inspection step, which is to check the electrical characteristics of the semiconductor device; and a mounting step, which is to perform the first inspection Chip mounting of normal semiconductor devices in the process On the substrate; and the second inspection step, which is to inspect the electrical characteristics of the semiconductor device after the mounting step; in at least one of the first inspection step or the second inspection step, the electrode attached to the semiconductor device contains conductive The anisotropic conductive adhesive film of anisotropic particles, the probe is pressed against the electrode of the semiconductor device via the anisotropic conductive adhesive film to compress the conductive particles to check the electrical characteristics of the semiconductor device, and then the semiconductor device is peeled off Anisotropic conductive adhesive film. For example, the method for manufacturing a semiconductor device according to the fourth item of the scope of patent application, which further includes: a through electrode forming step, which forms through electrodes on a wafer; and a through electrode inspection step, which inspects the electrical characteristics of the through electrodes; In the step, the three-dimensional chip of the normal semiconductor device in the first inspection step and the through electrode inspection step is mounted on a substrate. In the through electrode inspection step, anisotropic conductive particles containing conductive particles are attached to the through electrode For the adhesive film, after pressing the probe against the through electrode via the anisotropic conductive adhesive film to compress the conductive particles to inspect the electrical characteristics of the through electrode, the anisotropic conductive adhesive film is peeled from the through electrode. For example, the method for manufacturing a semiconductor device according to item 4 or 5 of the scope of patent application, wherein the above-mentioned probe is pressed to be vertically erected with respect to the electrode surface. For example, the method for manufacturing a semiconductor device according to item 4 or 5 of the scope of the patent application, wherein the tip shape of the probe is any one of a flat surface, a concave surface, or a serrated surface. For example, the method for manufacturing a semiconductor device according to item 4 or 5 of the scope of patent application, wherein the anisotropic conductive adhesive film contains a curing agent. For example, the method of manufacturing a semiconductor device in the 4th or 5th item of the patent application, wherein the above-mentioned difference The thickness of the rectangular conductive adhesive film is 50~1000% of the average particle size of the conductive particles contained in it.

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