KR20180078359A - 발광 반도체 칩 - Google Patents

발광 반도체 칩 Download PDF

Info

Publication number
KR20180078359A
KR20180078359A KR1020187018915A KR20187018915A KR20180078359A KR 20180078359 A KR20180078359 A KR 20180078359A KR 1020187018915 A KR1020187018915 A KR 1020187018915A KR 20187018915 A KR20187018915 A KR 20187018915A KR 20180078359 A KR20180078359 A KR 20180078359A
Authority
KR
South Korea
Prior art keywords
quantum
semiconductor chip
layer
semiconductor
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020187018915A
Other languages
English (en)
Korean (ko)
Inventor
마티아스 페터
토비아스 마이어
알렉산더 발터
테츠야 타키
외르겐 오프
라이너 부텐다이히
요아힘 헤르트콘
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20180078359A publication Critical patent/KR20180078359A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H01L33/04—
    • H01L33/06—
    • H01L33/14—
    • H01L33/22—
    • H01L33/24—
    • H01L33/382—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H01L2224/16225—
    • H01L2924/0002—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Led Devices (AREA)
KR1020187018915A 2009-12-30 2010-12-27 발광 반도체 칩 Ceased KR20180078359A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009060747.1A DE102009060747B4 (de) 2009-12-30 2009-12-30 Halbleiterchip
DE102009060747.1 2009-12-30
PCT/EP2010/070761 WO2011080249A1 (de) 2009-12-30 2010-12-27 Lichtemittierender halbleiterchip

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177017884A Division KR20170080718A (ko) 2009-12-30 2010-12-27 발광 반도체 칩

Publications (1)

Publication Number Publication Date
KR20180078359A true KR20180078359A (ko) 2018-07-09

Family

ID=43827573

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020187018915A Ceased KR20180078359A (ko) 2009-12-30 2010-12-27 발광 반도체 칩
KR1020127020140A Active KR101755586B1 (ko) 2009-12-30 2010-12-27 발광 반도체 칩
KR1020177017884A Ceased KR20170080718A (ko) 2009-12-30 2010-12-27 발광 반도체 칩

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020127020140A Active KR101755586B1 (ko) 2009-12-30 2010-12-27 발광 반도체 칩
KR1020177017884A Ceased KR20170080718A (ko) 2009-12-30 2010-12-27 발광 반도체 칩

Country Status (8)

Country Link
US (4) US9012885B2 (https=)
EP (1) EP2519980B1 (https=)
JP (1) JP5735984B2 (https=)
KR (3) KR20180078359A (https=)
CN (2) CN106229395B (https=)
DE (1) DE102009060747B4 (https=)
TW (1) TWI449212B (https=)
WO (1) WO2011080249A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
US8357924B2 (en) 2010-01-05 2013-01-22 Seoul Opto Device Co., Ltd. Light emitting diode and method of fabricating the same
DE102011100037A1 (de) 2011-04-29 2012-10-31 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip mit integriertem ESD-Schutz
JP5123414B2 (ja) 2011-05-16 2013-01-23 株式会社東芝 半導体発光素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
DE102013104272A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
CN104701431B (zh) * 2014-11-27 2017-03-29 厦门市三安光电科技有限公司 一种发光二极管的外延结构及其制作方法
KR102391513B1 (ko) 2015-10-05 2022-04-27 삼성전자주식회사 물질막 적층체, 발광 소자, 발광 패키지, 및 발광 소자의 제조 방법
JP6921179B2 (ja) * 2016-07-28 2021-08-18 ルミレッズ リミテッド ライアビリティ カンパニー 超格子を用いたｉｉｉ−ｐ発光デバイス
US20180033912A1 (en) * 2016-07-28 2018-02-01 Lumileds Llc Iii-p light emitting device with a superlattice
DE102016120419B4 (de) * 2016-10-26 2025-12-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterkörper
DE102016123262B4 (de) * 2016-12-01 2025-07-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterkörper und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE102017104370A1 (de) 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Halbleiterkörper

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263748A (ja) * 1994-03-22 1995-10-13 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子及びその製造方法
US6677619B1 (en) 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3374737B2 (ja) * 1997-01-09 2003-02-10 日亜化学工業株式会社 窒化物半導体素子
JP3429446B2 (ja) * 1998-03-19 2003-07-22 シャープ株式会社 半導体発光素子
EP0908988A3 (en) 1997-10-06 2001-10-17 Sharp Kabushiki Kaisha Light-emitting device and fabricating method thereof
JP3622562B2 (ja) * 1998-03-12 2005-02-23 日亜化学工業株式会社 窒化物半導体発光ダイオード
KR100589621B1 (ko) 1998-03-12 2006-06-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
JP4629178B2 (ja) 1998-10-06 2011-02-09 日亜化学工業株式会社 窒化物半導体素子
US6649942B2 (en) * 2001-05-23 2003-11-18 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
US6717969B2 (en) * 2001-07-16 2004-04-06 Fuji Photo Film Co., Ltd. Semiconductor laser device which includes current confinement structure and trenches formed through current stopping layer down to active layer
KR100909733B1 (ko) 2002-01-28 2009-07-29 니치아 카가쿠 고교 가부시키가이샤 지지기판을 갖는 질화물 반도체소자 및 그 제조방법
SG115549A1 (en) * 2002-07-08 2005-10-28 Sumitomo Chemical Co Epitaxial substrate for compound semiconductor light emitting device, method for producing the same and light emitting device
JP2005093682A (ja) * 2003-09-17 2005-04-07 Toyoda Gosei Co Ltd ＧａＮ系半導体発光素子及びその製造方法
KR100456063B1 (ko) 2004-02-13 2004-11-10 에피밸리 주식회사 Ⅲ-질화물 반도체 발광소자
JP2005277374A (ja) * 2004-02-26 2005-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
CN1324719C (zh) * 2004-04-01 2007-07-04 光磊科技股份有限公司 一种发光二极管
TWI250666B (en) * 2004-05-03 2006-03-01 Osram Opto Semiconductors Gmbh Method to produce a radiation-emitting semiconductor-chip and said produced semiconductor-chip
US7943949B2 (en) * 2004-09-09 2011-05-17 Bridgelux, Inc. III-nitride based on semiconductor device with low-resistance ohmic contacts
US7042018B2 (en) * 2004-09-22 2006-05-09 Formosa Epitaxy Incorporation Structure of GaN light-emitting diode
US7042019B1 (en) * 2004-10-12 2006-05-09 Formosa Epitaxy Incorporation Gallium-nitride based multi-quantum well light-emitting diode n-type contact layer structure
KR100631971B1 (ko) * 2005-02-28 2006-10-11 삼성전기주식회사 질화물 반도체 발광 소자
US7446345B2 (en) 2005-04-29 2008-11-04 Cree, Inc. Light emitting devices with active layers that extend into opened pits
US7847279B2 (en) * 2005-07-06 2010-12-07 Lg Innotek Co., Ltd. Nitride semiconductor LED and fabrication method thereof
JP2007042751A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 半導体発光素子
KR100674862B1 (ko) * 2005-08-25 2007-01-29 삼성전기주식회사 질화물 반도체 발광 소자
US20070051962A1 (en) * 2005-09-08 2007-03-08 Mu-Jen Lai Gallium nitride semiconductor light emitting device
JP2007201195A (ja) * 2006-01-26 2007-08-09 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
TWI325641B (en) * 2006-09-04 2010-06-01 Huga Optotech Inc Light emitting device and methods for forming the same
DE102007019776A1 (de) 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
KR101164026B1 (ko) 2007-07-12 2012-07-18 삼성전자주식회사 질화물계 반도체 발광소자 및 그 제조방법
DE102007046027A1 (de) 2007-09-26 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur
WO2009045005A2 (en) * 2007-10-02 2009-04-09 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device
KR20090034163A (ko) 2007-10-02 2009-04-07 주식회사 에피밸리 3족 질화물 반도체 발광소자
DE102007057674A1 (de) 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh LED mit Stromaufweitungsschicht
KR100903103B1 (ko) 2007-12-05 2009-06-16 우리엘에스티 주식회사 화합물 반도체를 이용한 발광소자
JP2009200084A (ja) 2008-02-19 2009-09-03 Seiko Instruments Inc 発光デバイス
US8643034B2 (en) 2008-02-29 2014-02-04 Osram Opto Semiconductors Gmbh Monolithic, optoelectronic semiconductor body and method for the production thereof
DE102008016525A1 (de) 2008-03-31 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US8536615B1 (en) * 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
US8357924B2 (en) * 2010-01-05 2013-01-22 Seoul Opto Device Co., Ltd. Light emitting diode and method of fabricating the same
CN101789473B (zh) 2010-02-23 2013-03-20 厦门大学 一种GaN基垂直结构发光二极管及其制备方法

Also Published As

Publication number Publication date
DE102009060747B4 (de) 2025-01-09
US9799797B2 (en) 2017-10-24
CN106229395B (zh) 2020-08-14
EP2519980A1 (de) 2012-11-07
KR20170080718A (ko) 2017-07-10
JP5735984B2 (ja) 2015-06-17
KR20120102146A (ko) 2012-09-17
CN106229395A (zh) 2016-12-14
US9530931B2 (en) 2016-12-27
TWI449212B (zh) 2014-08-11
US20150194570A1 (en) 2015-07-09
KR101755586B1 (ko) 2017-07-07
CN102687290A (zh) 2012-09-19
EP2519980B1 (de) 2019-04-03
US10388828B2 (en) 2019-08-20
WO2011080249A1 (de) 2011-07-07
JP2013516751A (ja) 2013-05-13
TW201135968A (en) 2011-10-16
US20170025570A1 (en) 2017-01-26
CN102687290B (zh) 2016-08-17
US20170324001A1 (en) 2017-11-09
US20120298964A1 (en) 2012-11-29
US9012885B2 (en) 2015-04-21
DE102009060747A1 (de) 2011-07-07

Similar Documents

Publication Publication Date Title
KR101755586B1 (ko) 발광 반도체 칩
US7939833B2 (en) Nitride semiconductor light emitting device
KR101536791B1 (ko) 전류 확산층을 포함한 ｌｅｄ
CN114243448B (zh) 半导体激光二极管
CN101582474A (zh) 半导体发光器件
US9293657B2 (en) Semiconductor light emitting device
KR20110072424A (ko) 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR20110027296A (ko) 발광소자 및 그 제조방법
US7791081B2 (en) Radiation-emitting semiconductor chip
KR101221067B1 (ko) 리지 도파형 반도체 레이저 다이오드
RU2277736C1 (ru) Полупроводниковый элемент, излучающий свет в синей области видимого спектра
JP7064269B2 (ja) 半導体発光素子
US20140353578A1 (en) Light-emitting device
CN104584242A (zh) 光电子半导体本体和光电子半导体芯片
CN103828072A (zh) 发射辐射的半导体芯片
KR101172136B1 (ko) 발광소자, 발광소자의 제조방법 및 발광소자 패키지
JP2026018158A (ja) 半導体発光素子
KR20110101116A (ko) 발광소자

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000