KR20180049176A - 정전척 및 웨이퍼 처리 장치 - Google Patents

정전척 및 웨이퍼 처리 장치 Download PDF

Info

Publication number
KR20180049176A
KR20180049176A KR1020187011953A KR20187011953A KR20180049176A KR 20180049176 A KR20180049176 A KR 20180049176A KR 1020187011953 A KR1020187011953 A KR 1020187011953A KR 20187011953 A KR20187011953 A KR 20187011953A KR 20180049176 A KR20180049176 A KR 20180049176A
Authority
KR
South Korea
Prior art keywords
dielectric substrate
ceramic dielectric
outer periphery
electrode layer
imaginary line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020187011953A
Other languages
English (en)
Korean (ko)
Inventor
카즈키 아나다
유이치 요시이
타쿠마 와다
Original Assignee
토토 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=57143470&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR20180049176(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 토토 가부시키가이샤 filed Critical 토토 가부시키가이샤
Publication of KR20180049176A publication Critical patent/KR20180049176A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020187011953A 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치 Withdrawn KR20180049176A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015086807A JP6124156B2 (ja) 2015-04-21 2015-04-21 静電チャックおよびウェーハ処理装置
JPJP-P-2015-086807 2015-04-21
PCT/JP2015/062905 WO2016170694A1 (ja) 2015-04-21 2015-04-28 静電チャックおよびウェーハ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177019576A Division KR101855228B1 (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Publications (1)

Publication Number Publication Date
KR20180049176A true KR20180049176A (ko) 2018-05-10

Family

ID=57143470

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177019576A Active KR101855228B1 (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치
KR1020187011953A Withdrawn KR20180049176A (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020177019576A Active KR101855228B1 (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Country Status (6)

Country Link
US (1) US10714373B2 (enExample)
JP (1) JP6124156B2 (enExample)
KR (2) KR101855228B1 (enExample)
CN (1) CN107431038B (enExample)
TW (1) TWI553774B (enExample)
WO (1) WO2016170694A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11133211B2 (en) * 2018-08-22 2021-09-28 Lam Research Corporation Ceramic baseplate with channels having non-square corners
US20210159107A1 (en) * 2019-11-21 2021-05-27 Applied Materials, Inc. Edge uniformity tunability on bipolar electrostatic chuck
KR20220016387A (ko) * 2020-07-31 2022-02-09 삼성디스플레이 주식회사 정전척, 에칭 장치 및 표시 장치의 제조 방법
WO2022146667A1 (en) 2020-12-29 2022-07-07 Mattson Technology, Inc. Electrostatic chuck assembly for plasma processing apparatus
US11567417B2 (en) * 2021-01-20 2023-01-31 Applied Materials, Inc. Anti-slippery stamp landing ring
JP7623084B2 (ja) * 2021-03-08 2025-01-28 東京エレクトロン株式会社 基板支持器
JP7745434B2 (ja) * 2021-11-05 2025-09-29 日本特殊陶業株式会社 基板保持部材及び基板保持部材の製造方法
JP2025176267A (ja) * 2024-05-21 2025-12-04 Toto株式会社 静電チャック

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1194954B1 (en) * 1999-07-08 2011-05-18 Lam Research Corporation Electrostatic chuck and its manufacturing method
JP2004282047A (ja) * 2003-02-25 2004-10-07 Kyocera Corp 静電チャック
JP4031419B2 (ja) * 2003-09-19 2008-01-09 日本碍子株式会社 静電チャック及びその製造方法
US7646580B2 (en) 2005-02-24 2010-01-12 Kyocera Corporation Electrostatic chuck and wafer holding member and wafer treatment method
JP4796523B2 (ja) * 2006-03-24 2011-10-19 日本碍子株式会社 セラミックス焼成体の製造方法
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
JP2008042140A (ja) * 2006-08-10 2008-02-21 Tokyo Electron Ltd 静電チャック装置
JP5087561B2 (ja) * 2007-02-15 2012-12-05 株式会社クリエイティブ テクノロジー 静電チャック
JP5025576B2 (ja) 2008-06-13 2012-09-12 新光電気工業株式会社 静電チャック及び基板温調固定装置
KR101691044B1 (ko) * 2009-02-04 2016-12-29 맷슨 테크놀로지, 인크. 기판의 표면에 걸친 온도 프로파일을 방사상으로 튜닝하는 정전 척 시스템 및 방법
JP5496630B2 (ja) * 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
JP5218865B2 (ja) * 2010-03-26 2013-06-26 Ｔｏｔｏ株式会社 静電チャック
JP5339162B2 (ja) 2011-03-30 2013-11-13 Ｔｏｔｏ株式会社 静電チャック
JP5816454B2 (ja) * 2011-05-09 2015-11-18 新光電気工業株式会社 基板温調固定装置
JP5441019B1 (ja) * 2012-08-29 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP5441021B1 (ja) * 2012-09-12 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP6001402B2 (ja) * 2012-09-28 2016-10-05 日本特殊陶業株式会社 静電チャック
JP5633766B2 (ja) * 2013-03-29 2014-12-03 Toto株式会社 静電チャック
JP2015088743A (ja) * 2013-09-27 2015-05-07 Toto株式会社 静電チャック

Also Published As

Publication number Publication date
WO2016170694A1 (ja) 2016-10-27
KR101855228B1 (ko) 2018-05-09
US20180040499A1 (en) 2018-02-08
KR20170095979A (ko) 2017-08-23
CN107431038B (zh) 2021-08-10
US10714373B2 (en) 2020-07-14
JP2016207806A (ja) 2016-12-08
TW201639070A (zh) 2016-11-01
JP6124156B2 (ja) 2017-05-10
CN107431038A (zh) 2017-12-01
TWI553774B (zh) 2016-10-11

Similar Documents

Publication Publication Date Title
KR101855228B1 (ko) 정전척 및 웨이퍼 처리 장치
KR102760927B1 (ko) 정전척 어셈블리
KR101826695B1 (ko) 정전 척 및 웨이퍼 처리장치
TWI666679B (zh) 電漿處理裝置及電漿處理方法
TWI614791B (zh) 電漿處理裝置
US10373854B2 (en) Electrostatic chuck
TWI488236B (zh) Focusing ring and plasma processing device
TWI496240B (zh) 具有聚合物突出物的靜電吸盤
KR102383357B1 (ko) 배치대 및 기판 처리 장치
US8636872B2 (en) Upper electrode and plasma processing apparatus
TWI585816B (zh) A plasma processing apparatus, and a plasma processing apparatus
KR101613950B1 (ko) 플라즈마 처리장치
JP2015088743A (ja) 静電チャック
JP5411098B2 (ja) 分割可能な電極及びこの電極を用いたプラズマ処理装置ならびに電極交換方法
JP4669137B2 (ja) 分割可能な電極及びこの電極を用いたプラズマ処理装置
JP4355159B2 (ja) 静電吸着ホルダー及び基板処理装置
TWI817391B (zh) 降低局部靜電吸附力
KR102275077B1 (ko) 기판 처리 장치 및 방법
JP2006157032A (ja) 静電チャック、静電吸着方法、加熱冷却処理装置、静電吸着処理装置
TW202437388A (zh) 電漿處理裝置及電漿處理裝置的樣品台的製造方法

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20180426

Application number text: 1020177019576

Filing date: 20170714

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination