KR20180034218A - Flip chip bonder and method for manufacturing semiconductor device - Google Patents

Abstract

According to the present invention, provided is a flip chip bonder, which can wash a die. The flip chip bonder comprises: a die supply unit for maintaining and supporting a die having a bump; a bonding stage for loading the die on a substrate or a pre-mounted die; a first head for picking the die up from the die supply unit to enable the die to be upside down; a second head for picking the die up from the first head; and a washing machine to wash the die located between the die supply unit and the bonding stage using dry ice.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a flip chip bonder,

The present disclosure relates to a flip chip bonder and is applicable, for example, to a flip chip bonder having a cleaning device.

Generally, in a die bonder that mounts a semiconductor chip, for example, on the surface of a wiring board, a lead frame, or the like (hereinafter collectively referred to as a substrate), a suction nozzle such as a collet is generally used (Operation) that bonding is performed by conveying the die onto the substrate, applying a pressing force and heating the bonding material, is repeatedly performed. In the die bonder, there is a flip chip bonder which flips the picked-up die (a die having a bump on its surface) and mounts it on the substrate.

The die bonder may be formed by cleaning the surface of a substrate (for example, Japanese Unexamined Patent Publication No. 1999-199458 (Patent Document 1)) or cleaning a suction surface of a collet (for example, Japanese Patent Laid- -58575 (Patent Document 2)).

Japanese Patent Laid-Open Publication No. 1999-199458 Japanese Patent Application Laid-Open No. 2016-58575

The adhesive residue from the back grinding tape adhered to the surface of the wafer or the dicing tape adhered to the back surface of the wafer is generated. For example, in the flip chip bonder, adhesive residue remains on the bump surface (die surface) . Both the patent documents 1 and 2 do not clean the die itself.

The object of the present disclosure is to provide a flip chip bonder for cleaning a die.

Other objects and novel features will be apparent from the description of the present specification and the accompanying drawings.

An outline of representative examples of the present disclosure will be briefly described below.

That is, the flip chip bonder includes a die supply portion for holding a die having bumps, a bonding stage for mounting the die on a substrate or an already-mounted die, and a bonding device for picking up the die from the die supply portion and vertically inverting A first head for picking up the die from the first head; and a cleaning device for cleaning the die located between the die supply part and the bonding stage with dry ice.

According to the flip chip bonder, it is possible to clean the die.

1 is a conceptual view of a flip chip bonder according to the first embodiment viewed from above;
Fig. 2 is a view for explaining the operation of the pick-up head and the bonding head when viewed from the direction of arrow A in Fig.
3 is a schematic sectional view showing a main part of the die supply portion of Fig.
Figure 4 is a block diagram of the cleaning apparatus of Figure 1;
5 is a cross-sectional view of the first nozzle and its periphery in Fig. 4;
FIG. 6 is a cross-sectional view of the second nozzle and its periphery of FIG. 4;
7 is a flow chart of the operation of the flip chip bonder of Fig.
Fig. 8 is an operational flow diagram of a flip chip bonder of Modification Example 1 of Fig. 1; Fig.
Fig. 9 is an operational flow diagram of a flip chip bonder of Modification Example 1 of Fig. 1; Fig.
10 is an operational flowchart related to a second variation of the flip chip bonder of FIG.
11 is a conceptual view of the flip chip bonder according to the second embodiment viewed from above.
12 is a view for explaining the operation of the pick-up head and the bonding head when viewed from the direction of arrow A in Fig.
13 is a block diagram of the cleaning device of Fig.
14 is a cross-sectional view of the third nozzle and its periphery in Fig. 13;
15 is a cross-sectional view of the third nozzle and its periphery in Fig. 13;
16 is a cross-sectional view of the third nozzle and its periphery in Fig. 13;
17 is an operational flow diagram of the flip chip bonder of Fig.
Fig. 18 is an operational flowchart of the flip chip bonder of Fig. 11; Fig.
19 is a conceptual view of the flip chip bonder according to the third embodiment viewed from above.
Fig. 20 is a view for explaining the operation of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 19; Fig.
Figure 21 is a block diagram of the cleaning apparatus of Figure 19;
22 is a cross-sectional view of the fifth nozzle and its periphery in Fig.
23 is a cross-sectional view of the fifth nozzle and its periphery in Fig.
24 is a cross-sectional view of the fifth nozzle and the periphery thereof in Fig.
25 is a cross-sectional view of the fifth nozzle and its periphery in Fig.
Fig. 26 is an operational flowchart of the flip chip bonder of Fig. 19; Fig.
Fig. 27 is an operational flowchart of the flip chip bonder of Fig. 19; Fig.
28 is a flowchart of the operation of the flip chip bonder of Fig. 19;
Fig. 29 is an operational flow chart of a flip chip bonder of Modification 3 of Fig. 19; Fig.
Fig. 30 is an operational flow diagram of a flip chip bonder of Modification 3 of Fig. 19;
31 is a conceptual view of the flip chip bonder according to the fourth embodiment viewed from above;
Fig. 32 is a view for explaining the operation of the pick-up head and the bonding head when viewed from the direction of arrow A in Fig.
Fig. 33 is a block diagram of the cleaning device of Fig. 31; Fig.
34 is a cross-sectional view of the fourth nozzle and the periphery thereof in Fig. 33;
35 is a cross-sectional view of the fourth nozzle and its periphery in Fig. 33;
Fig. 36 is an operational flowchart of the flip chip bonder of Fig. 31; Fig.
FIG. 37 is an operational flow diagram of the flip chip bonder of FIG. 31;
Fig. 38 is an operational flowchart of the flip chip bonder of Fig. 31; Fig.
Fig. 39 is an operational flow diagram of a flip chip bonder of Modification 4 of Fig. 31; Fig.
Fig. 40 is an operational flow diagram of a flip chip bonder of Modification 4 of Fig. 31; Fig.
Fig. 41 is an operational flow diagram of a flip chip bonder of Modification 4 of Fig. 31; Fig.

Hereinafter, embodiments and modifications will be described with reference to the drawings. In the following description, the same constituent elements are denoted by the same reference numerals, and repeated explanation may be omitted. Further, in order to make the explanation more clear, the drawings are schematically shown in terms of the width, thickness, shape, and the like of the respective parts in comparison with the actual shapes, but they are merely examples and do not limit the interpretation of the present invention.

The semiconductor manufacturing apparatus according to the embodiment cleans the surface of the die only, the back surface only, or both the front surface and the back surface, before picking up the dies from the wafer and bonding them onto the work such as the substrate or the die. The collet or the intermediate stage may be cleaned in addition to the die. Dry ice (CO ₂ ) is preferably used for cleaning.

[Example 1]

1 is a schematic top view of a flip chip bonder according to a first embodiment. Fig. 2 is a view for explaining the operation of the pick-up head and the bonding head when viewed from the direction of arrow A in Fig.

The flip chip bonder 10 is roughly divided into a die supply portion 1, a pickup portion 2, a bonding portion 4, a carry portion 5, a cleaning device 6, a substrate supply portion 9K, A substrate carry-out section 9H, and a control device 7 for monitoring and controlling the operation of each section.

First, the die supply unit 1 supplies a die D to be mounted on the substrate P. [ The die supply section 1 has a wafer holding table 12 for holding a wafer 11 and a lifting unit 13 indicated by a dotted line for pushing the die D from the wafer 11. The die feeder 1 is moved in the X and Y directions by driving means (not shown) to move the pick-up die D to the position of the push-up unit 13. [

The pickup unit 2 includes a collet 22 for picking up the die D from the die supply unit 1, a pick-up head 21 having a collet 22 at its tip and picking up the die, And a Y-driving unit 23 for moving the Y-driving unit 23 in the Y-direction. The pick-up head 21 as the first head has respective driving parts (not shown) for lifting, rotating, reversing, and moving the collet 22 in the X direction.

With this arrangement, the pickup head 21 picks up the die, rotates the pick-up head 21 by 180 degrees, reverses the bump face (surface) of the die D, To the bonding head 41 as shown in Fig.

The bonding section 4 receives the inverted die D from the pick-up head 21 and places it on the flux of the substrate P which has been transported or bonded by thermocompression bonding, And bonded on a die. The bonding section 4 includes a bonding head 41 having a collet 42 for holding and holding the die D at the tip thereof in the same manner as the pickup head 21 and a bonding head 41 for moving the bonding head 41 in the Y direction And a substrate recognition camera 44 for picking up a position recognition mark (not shown) of the substrate P and recognizing the bonding position.

The bonding head 41 as the second head receives the inverted die D from the pickup head 21 and corrects the pickup position and posture based on the imaging data of the under vision camera 45 And bonds the die D to the substrate P based on the imaging data of the substrate recognition camera 44. [

The cleaning device 6 has a first nozzle 61 for cleaning the back surface of the die D from above and a second nozzle 62 for cleaning the surface of the die D . The first nozzle 61 is capable of cleaning the collet 22 in addition to the die D held in the collet 22 of the pick-up head 21 picking up the die D from the wafer 11. [ The second nozzle 62 is capable of cleaning the collet 42 in addition to the die D held in the collet 42 of the bonding head 41 picking up the die D from the pick-

The carrying section 5 is provided with a substrate carrying pallet 51 on which one or a plurality of work pieces (four in FIG. 1) are mounted and a pallet rail 52 on which the substrate carrying pallet 51 moves, And has first and second transport sections of the same structure. The substrate transport pallet 51 is moved by driving a not shown nut provided on the substrate transport pallet 51 with a not shown ball screw provided along the pallet rail 52.

With such a configuration, the substrate transporting pallet 51 is configured so that the substrate P is loaded on the substrate supply section 9K, and the substrate P is transported to a position for bonding the die D to the substrate P along the pallet rail 52 (BS1) and the second bonding stage (BS2)) and moves to the substrate carrying-out section 9H after bonding to transfer the substrate P to the substrate carrying-out section 9H . The first and second carry sections are driven independently from each other and while the die D is being bonded to the substrate P loaded on one of the substrate transport pallets 51 while the other substrate transport pallet 51 is mounted on the substrate P, and returns to the substrate supply unit 9K to prepare for mounting a new substrate P or the like.

The control device 7 includes a memory for storing a program (software) for monitoring and controlling each part of the flip chip bonder 10, and a central processing unit (CPU) for executing a program stored in the memory. For example, the control device 7 introduces various information such as image information from the substrate recognition camera 44 and the under vision camera 45, the position of the bonding head 41, Operation and cleaning operation of the cleaning device 6, and the like.

Fig. 3 is a schematic sectional view showing the main part of the die supply portion of Fig. 1; Fig. The die feeder 1 includes an extender ring 15 for holding the wafer ring 14 and a dicing tape 16 held by the wafer ring 14 and to which a plurality of dies D are adhered horizontally A supporting ring 17 for positioning, and a push-up unit 13 for pushing the die D upward. In order to pick up a predetermined die D, the push-up unit 13 is moved up and down by a drive mechanism (not shown), and the die supply unit 1 is moved in the horizontal direction.

The die supply part 1 moves down the expander ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held on the wafer ring 14 is stretched out, so that the interval between the dies D is widened. In such a state, by pushing up the die D from below the die by the push-up unit 13, the die feeding section 1 improves the pick-up performance of the die D.

Next, the flip chip bonder cleaning apparatus according to the first embodiment will be described with reference to Figs. 4 to 6. Fig. 4 is a block diagram of the cleaning apparatus of Fig. 5 is a cross-sectional view of the first nozzle of Fig. 6 is a cross-sectional view of the second nozzle of Fig.

4, the cleaning device 6 includes a first nozzle 61, a second nozzle 62, a carbon dioxide supply source 63 for supplying liquid carbon dioxide, a compressed air (pressurized gas) And supply pipes 65a to 65d for supplying the powdery dry ice produced by mixing the liquid carbon dioxide and the compressed air to the first nozzle 61 and the second nozzle 62, Respectively. The cleaning device 6 further includes discharge pipes 66a to 66c for transporting foreign matter removed from the die in the first nozzle 61 and the second nozzle 62, a dust collecting unit 67 for collecting foreign matter, Valves 68a to 68f provided between the supply pipes and between the discharge pipes, and an ionizer 69. [

The first nozzle 61 is connected to a supply pipe 65a and a discharge pipe 66a. 5, the first nozzle 61 has a circular air jet opening 61a provided at a central portion thereof, an air inlet port 61b provided so as to surround the jet port in a ring shape, an air jet opening 61a, And a space 61c provided between the air inlet 61b and the air inlet 61b for covering the die D. [ Thus, the foreign matter blown by the air ejected from the air ejection port 61a is immediately sucked by the air suction port 61b as shown by an arrow in Fig. 3, and finally discarded.

The second nozzle 62 is connected to a supply pipe 65b and a discharge pipe 66b. 6, the second nozzle 62 includes, in the same manner as the first nozzle 61, a circular air jet opening 62a provided at a central portion thereof and an air inlet port 62a provided so as to surround the jet port in a ring shape And a cleaning space 62c which is provided between the air jet port 62a and the air suction port 62b and covers the die D. [

The first nozzle 61 is connected to a carbon dioxide supply source 63 for supplying carbon dioxide of liquid through a supply pipe 65a, a valve 68a, supply pipes 65c and 65d, a valve 68c and a supply pipe 65e. Respectively. The first nozzle 61 supplies the compressed air (compressed air) through the supply pipe 65a, the valve 68a, the supply pipes 65c and 65d, the valve 68d and the supply pipe 65f And is connected to an air supply source 64 for supplying air. An ionizer (antistatic means) 59 for ionizing the air supplied from the air supply source 64 is provided between the supply pipe 65c and the supply pipe 65d. The first nozzle 61 is connected to the dust collecting unit 67 through a discharge pipe 66a, a valve 68e and a discharge pipe 66c.

The second nozzle 62 is connected to a carbon dioxide supply source 63 for supplying liquid carbon dioxide through a supply pipe 65b, a valve 68a, supply pipes 65c and 65d, a valve 68c and a supply pipe 65e. Respectively. The second nozzle 62 supplies the compressed air (compressed air) through the supply pipe 65b, the valve 68a, the supply pipes 65c and 65d, the valve 68d and the supply pipe 65f And is connected to an air supply source 64 for supplying air. The second nozzle 62 is connected to the dust collecting unit 67 through a discharge pipe 66b, a valve 68f and a discharge pipe 66c.

Next, a bonding method (a method of manufacturing a semiconductor device) performed in the flip chip bonder according to the first embodiment will be described with reference to FIG. Fig. 7 is a flowchart showing a bonding method performed in the flip chip bonder according to the embodiment. Fig.

Step S1: The control device 7 moves the wafer holding table 12 so that the pick-up die D is located directly above the push-up unit 13, thereby moving the lifting unit 13 and the collet 22). The lifting unit 13 is moved so that the upper surface of the lifting unit 13 comes into contact with the back surface of the dicing tape 16. At this time, the controller 7 sucks the dicing tape 16 on the upper surface of the lifting unit 13. The control device 7 descends the collet 22 while evacuating it, and lands on the die D to be peeled to adsorb the die D. The control device 7 lifts the collet 22 and separates the die D from the dicing tape 16. [ Thereby, the die D is picked up by the pick-up head 21.

Step S2: The control device 7 moves the pickup head 21.

Step S3: The control device 7 rotates the pick-up head 21 by 180 degrees so that the bump face (surface) of the die D is reversed to face the bottom face and the die D is passed to the bonding head 41 Put on posture.

Step S4: After or at step S3, the controller 7 controls the cleaning space 61c of the first nozzle 61 on the die D holding the collet 22 of the pick-up head 21 Move and lower.

Step S5: The control device 7 supplies the liquid carbon dioxide from the carbon dioxide supply source 63 to the supply pipe 65e and supplies the air from the air supply source 64 to the supply pipe 65f.

The control device 7 supplies the liquid carbon dioxide from the carbon dioxide supply source 63 to the supply line 65d and the air from the air supply source 64 to the supply line 65d to mix them. As a result, a part of the carbon dioxide of the liquid is vaporized and takes heat (vaporizing heat), and the carbon dioxide temperature of the liquid is lower than the solidifying point, and dry ice (solid carbon dioxide) is generated. Thus, the dry ice obtained by discharging the liquid carbon dioxide into the atmosphere in the cleaning space 62c becomes an extremely fine powdery phase.

When the powdery dry ice is sprayed from the air jet port 61a and impinges on the die D, the dry ice is deformed, crushed, and sublimated. Foreign matter attached to the back surface of the die D is removed by the energy of expansion caused by the sublimation of the dry ice. The removed foreign matter is sucked from the air suction port 61b and discharged to the dust collecting unit 67 through the discharge pipe 66a and the like. The supply amount of the carbon dioxide and air of the liquid is adjusted such that the amount of dry ice suitable for the cleaning of the die D is jetted from the air jet port 61a.

Since the aforementioned dry ice has a low hardness and is fine, the die D is not scratched by this cleaning. Since the cleaning device 6 is provided with the ionizer 69 for suitably ionizing the compressed air supplied from the air supply source 64 in the supply pipe, the dry ice in powder form is prevented from being charged, It is possible to prevent breakage of the battery.

Step S6: The control device 7 raises the cleaning space 61c of the first nozzle 61 to move it from the die D held by the collet 22 of the pick-up head 21.

Step S7: The control device 7 picks up the die D from the collet 22 of the pick-up head 21 by the collet 42 of the bonding head 41 and delivers the die D.

Step S8: The control device 7 moves the bonding head 41 to the cleaning position (just above the second nozzle 62) and places the bonding head 41 in the cleaning space 62c of the second nozzle 62, The die D held by the collet 42 of the die D is moved.

Step S9: As in step S5, the control device 7 ejects the dry ice from the air blowing port 62a to remove the foreign matter adhering to the surface of the die D. The removed foreign matter is sucked from the air suction port 62b and discharged to the dust collecting unit 67 through the discharge piping 66b and the like.

Step SA: The control device 7 moves the die D held by the collet 42 of the bonding head 41 onto the substrate P.

Step SB: The control device 7 loads the die D picked up from the collet 22 of the pick-up head 21 into the collet 42 of the bonding head 41 on the substrate P.

Step SC: After or after step S8, the control device 7 inverts the pickup head 21 so that the suction surface of the collet 22 faces downward.

Step SD: The control device 7 moves the pickup head 21 to the pickup position.

Before the step S1, the wafer ring 14 holding the dicing tape 16 with the die D divided therefrom is stored in a wafer cassette (not shown) from the wafer 11, (10). The control device 7 supplies the wafer ring 14 from the wafer cassette filled with the wafer ring 14 to the die supply part 1. [ Further, the substrate P is prepared and brought into the flip chip bonder 10. The control device 7 loads the substrate P onto the substrate transport pallet 51 with the substrate supply section 9K.

After step SB, the control device 7 takes out the substrate P on which the die D is bonded from the substrate carrying pallet 51 at the substrate carrying-out section 9H. The substrate P is carried out from the flip chip bonder 10. [

In the flip chip bonder, adhesive residue may remain on the bump surface, which may result in connection failure. In Embodiment 1, dry ice (CO ₂ ) cleaning is performed immediately before mounting on a bump product which is to be narrowed further in the future. This makes it possible to remove the adhesive residue from the back grinding tape adhered to the surface of the wafer or the dicing tape adhered to the back surface of the wafer and the foreign matter adhesion in the tray before mounting the substrate on the substrate. In addition, foreign matters can be removed without damaging the bumps. It is possible to reduce the connection failure due to entrapment of the foreign object.

In the case where the die D has a TSV (Trough Silicon Via (Si penetration electrode)), another die is stacked on the back surface, so cleaning in Step S5 is effective. In the case where the die D does not have a TSV or is not stacked, Step S5 may not be executed. A cleaning device may be provided on the substrate side and the substrate land side may be also cleaned.

≪ Modification Example 1 &

Next, Modification 1 of the bonding method (semiconductor device manufacturing method) performed in the flip chip bonder according to the first embodiment will be described with reference to Figs. 8 and 9. Fig. 8 is a flow chart showing a bonding method according to a first modified example of the flip chip bonder of Fig. The terminals A and B in the flow chart of Fig. 8 are connected to the terminals A and B of Fig.

The bonding method according to Modification Example 1 also cleans the collet 22 of the pickup head 21 by the first nozzle 61 of the cleaning device 6 in addition to the bonding method according to the embodiment. Hereinafter, the added steps will be described.

Step SE: After step S7, the control device 7 moves the cleaning space 61c of the first nozzle 61 onto the collet 22 of the pick-up head 21 and lower it.

Step SF: The control device 7 ejects the dry ice from the air blowing port 61a in the same manner as in step S5, and removes the foreign matter adhering to the surface of the attracting surface of the collet 22. The removed foreign matter is sucked from the air suction port 61b and discharged to the dust collecting unit 67 through the discharge pipe 66a and the like.

Step SG: The control device 7 raises the cleaning space 61c of the first nozzle 61 and moves it from the collet 22 of the pickup head 21.

≪ Modification Example 2 &

Next, a second modification of the bonding method (semiconductor device manufacturing method) performed in the flip chip bonder according to the first embodiment will be described with reference to FIG. 10 is a flowchart showing a bonding method according to a second modification of the flip chip bonder of FIG. The terminals A and B in the flowchart of Fig. 10 are connected to the terminals A and B in Fig.

The bonding method according to Modification Example 2 also cleans the collet 42 of the bonding head 41 with the second nozzle 62 of the cleaning device 6 in addition to the bonding method according to Modification Example 1. [ Hereinafter, the added steps will be described.

Step SH: The control device 7 moves the bonding head 41 to the cleaning position (immediately above the second nozzle 62) and places the bonding head 41 in the cleaning space 62c of the second nozzle 62 The collet 42 is moved.

Step SI: As in step S5, the controller 7 ejects the dry ice from the air jet port 62a to remove foreign matter adhering to the surface of the attracting surface of the collet 42. [ The removed foreign matter is sucked from the air suction port 62b and discharged to the dust collecting unit 67 through the discharge piping 66b and the like.

Step SJ: The control device 7 moves the collet 42 of the bonding head 41 to the delivery position of the die D.

In Modifications 1 and 2, when a collet is used for a rubber, it is preferable to use a Si rubber material having flexibility and cold resistance even at a low temperature of dry ice cleaning, particularly FVMQ (trade name: Fluoropower) . It is also preferable to use a metal or a resin having cold resistance to the collet. In this case, it is preferable to provide a function of preventing the temperature from dropping by irradiating infrared rays to the collet or the collet itself having a built-in heater or holding the die during cleaning so that condensation or the like does not occur in the collet. In the following examples and modifications, it is preferable to apply the material of the collet and the dew condensation preventing function to the case of cleaning the collet.

[Example 2]

11 is a top view showing the outline of the flip chip bonder according to the second embodiment. 12 is a view for explaining the operation of the pickup flip head, the transfer head and the bonding head when viewed from the direction of arrow A in Fig.

The flip chip bonder 10A is roughly divided into a die supply portion 1, a pickup portion 2A, a transfer portion 8, an intermediate stage portion 3, a bonding portion 4A, A cleaning device 6A, a substrate supply part 9K, a substrate carrying part 9H, and a control device 7 for monitoring and controlling the operation of each part.

The pick-up section 2A includes a pick-up flip head 21A for picking up and inverting the die D, a Y-drive section 23A for pick-up head for moving the pickup flip head 21A in the Y- Rotation, inversion, and X-direction movement of the driving unit. With this configuration, the pick-up flip head 21A as the first head picks up the die, rotates the pick-up flip head 21A by 180 degrees, reverses the bumps of the die D, (D) to the transfer head 81 which is the second head.

The transfer section 8 receives the inverted die D from the pick-up flip head 21A and loads it on the intermediate stage 31. [ The transfer section 8 includes a transfer head 81 having a collet 82 for sucking and holding the die D at its tip as in the case of the pickup flip head 21A and a transfer head 81 for moving the transfer head 81 in the Y direction And a Y driver 83.

The intermediate stage portion 3 has an intermediate stage 31 for temporarily loading the dies D therein. The intermediate stage 31 is movable in the Y direction by a driving unit (not shown). As a countermeasure for condensation, it is preferable to incorporate a heating means such as a heater in the intermediate stage 31. [ It is preferable to apply the same dew condensation measures to the intermediate stages of the following embodiments and modifications.

The bonding section 4A is a device for picking up the dies D from the intermediate stage 31 and bonding them onto the substrate P to be transported or stacking them on a die already bonded on the substrate P Bonding. The bonding section 4A includes a bonding head 41 having a collet 42 (see Fig. 12) for holding and holding the die D at the tip thereof, like the pickup flip head 21A, and a bonding head 41 And a substrate recognition camera 44 for picking up a position recognition mark (not shown) of the substrate P and recognizing the bonding position.

With this arrangement, the bonding head 41, which is the third head, corrects the pickup position and posture based on the imaging data of the under vision camera 45, picks up the die D from the intermediate stage 31, The die D is bonded to the substrate P based on the imaging data of the substrate recognition camera 44. [

The cleaning device 6A has a third nozzle 61A for cleaning the back surface of the die D from above and a second nozzle 62 for cleaning the surface of the die D . The third nozzle 61A can be cleaned from above the upper surface of the intermediate stage 31 in addition to the back surface of the die D mounted on the intermediate stage 31. [ The second nozzle 62 can be cleaned from the lower side of the adsorption face of the collet 42 in addition to the surface of the die D held in the collet 42 of the bonding head 41.

Next, the cleaning device according to the second embodiment will be described with reference to Fig. 13 is a block diagram of the cleaning apparatus.

The cleaning device 6A has a third nozzle 61A instead of the first nozzle 61 of the cleaning device 6 of the first embodiment. The cleaning apparatus 6A includes a second nozzle 62, a third nozzle 61A, a carbon dioxide supply source 63 for supplying liquid carbon dioxide, an air supply source 64 for supplying compressed air (pressurized gas) And supply pipes 65b to 65d and 65g for supplying the powdery dry ice produced by mixing the liquid carbon dioxide and compressed air to the second nozzle 62 and the third nozzle 61A. The cleaning device 6A further includes discharge pipes 66b to 66d for transporting foreign matter removed from the die D and the like from the second nozzle 62 and the third nozzle 61A, (68b to 68d, 68f to 68h) installed between the supply pipe and the discharge pipe, and an ionizer (69).

The third nozzle 61A has the same structure as the first nozzle 61 of the first embodiment and performs cleaning in the same operation.

Next, the bonding method (semiconductor device manufacturing method) performed in the flip chip bonder according to the second embodiment will be described with reference to Figs. 14 to 18. Fig. 14 is a cross-sectional view of the third nozzle during die cleaning. 15 is a cross-sectional view of the third nozzle after die cleaning is finished. 16 is a cross-sectional view of the third nozzle at the time of cleaning the intermediate stage. 17 and 18 are flowcharts showing a bonding method performed in the flip chip bonder according to the second embodiment. The terminals A and B in the flowchart of Fig. 17 are connected to the terminals A and B of Fig. 9 or 10 of the first embodiment. The terminals C and D in Fig. 17 are connected to the terminals C and D in Fig.

Step S11: The control device 7 picks up the die D by the pick-up flip head 21A as in step S1.

Step S12: The control device 7 moves the pickup flip head 21A in the same manner as in step S2.

Step S13: The control device 7 rotates the pickup flip head 21A by 180 degrees and inverts the bumps (surface) of the die D to face the lower surface of the die D, (81).

Step S14: The control device 7 picks up the die D by the collet 82 of the transfer head 81 from the collet 22 of the pick-up flip head 21A as in step S7, Is carried out.

Step S15: The control device 7 inverts the pick-up flip head 21A so that the suction surface of the collet 22 faces downward.

Step S16: Before or concurrently with the step S15, the control device 7 moves the transfer head 81 to the intermediate stage 31.

Step S17: The control device 7 loads the die D held on the transfer head 81 onto the intermediate stage 31. Then,

Step S18: The control device moves the transfer head 81 to the delivery position of the die D

Step S19: After or after step S18, the control device 7 moves the intermediate stage 31 to a position below the third nozzle 61A.

Step S1A: The control device 7 moves (descends) the cleaning space 61c of the third nozzle 61A onto the die D mounted on the intermediate stage 31. Then,

Step S1B: As in step S5, the control device 7 ejects powdered dry ice from the air blowing port 61a, removes foreign matter attached to the back surface of the die D and cleans the foreign matter, (61b) and discharged to the dust collecting unit 67 (Fig. 14).

Step S1C: The control device 7 moves (lifts) the third nozzle 61A from the intermediate stage 31 as shown in Fig.

Step S1D: After or after step S1C, the control device 7 moves the intermediate stage 31 to the delivery position with the bonding head 41. [

Step S1E: The control device 7 picks up the die D from the intermediate stage 31 by the collet of the bonding head 41, and the die D is delivered.

Step S1F: The control device 7 moves the intermediate stage 31 to the lower side of the third nozzle 61A.

Step S1G: After or after step S1G, the controller 7 moves (descends) the cleaning space 61c of the third nozzle 61A onto the intermediate stage 31.

Step S1H: The control device 7 ejects the dry ice from the air blowing port 61a to remove the foreign matter adhering to the surface of the intermediate stage 31 to clean the foreign matter, And is discharged to the dust collecting unit 67 (Fig. 16).

Step S1I: The control device 7 moves (lifts) the third nozzle 61A from the intermediate stage 31. Then,

Step S1J: The control device 7 moves the intermediate stage 31 to the transfer position with the transfer head 81.

9 and 9) and cleaning of the surface of the die D by the second nozzle 62 and cleaning of the collet 42 are the same as those of Modification 1 (FIG. 9) and Modification 2 (FIG. 10) Do. The operation before step S11 is the same as the operation before step S1 of the first embodiment. The take-out and take-out operation of the substrate P after bonding is the same as that of the first embodiment.

In the flip chip bonder according to the second embodiment, a cleaning device is provided on the intermediate stage, and both sides of the die and the intermediate stage are cleaned. Thereby, the back surface of the die on which the laminated bonding is performed can be cleaned to prevent voids and the like caused by foreign matter on the lamination die, and accumulation of foreign matter on the intermediate stage can be prevented.

The nozzle of the cleaning apparatus according to Example 2 ejects and sucks powdered dry ice. The spray cleaning area of the dry ice of the nozzle is an area larger than the maximum size of the die to be mounted. The cleaning device has a function of raising and lowering to a position where it does not interfere with the operation of the bonding head. Further, a cleaning stage for mounting a die separately from the intermediate stage may be provided, and the nozzle of the cleaning apparatus may be movable to the positions of the cleaning stage and the intermediate stage. According to the second embodiment, both of the back surface of the die and the intermediate stage can be cleaned with a single apparatus cleaning apparatus.

In addition to the intermediate stage 31, the third nozzle 61A may be movable, and the intermediate stage 31 may be provided with a plurality of units in accordance with the required throughput.

[Example 3]

19 is a top view showing the outline of the flip chip bonder according to the third embodiment. Fig. 20 is a view for explaining the operation of the pickup flip head, the transfer head, and the bonding head when viewed from the direction of arrow A in Fig. 19. Fig.

The flip chip bonder 10B is roughly divided into a die supply portion 1, a pickup portion 2A, a transfer portion 8, an intermediate stage portion 3B having a cleaning device 6B, a bonding portion 4A A substrate feeding portion 9K, a substrate carrying portion 9H, and a control device 7 for monitoring and controlling the operation of each part.

The intermediate stage portion 3B has an intermediate stage 31B for temporarily loading the dies D and a stage recognition camera 32 for recognizing the dies D on the intermediate stage 31B. The intermediate stage 31B includes a fifth nozzle 62B of the cleaning device 6B and a shutter SS (stage) on which the die D is mounted.

The cleaning device 6B is configured to open and close the shutter SS of the intermediate stage 31B so that the surface of the die D held by the collet 82 of the transfer head 81 and the lower surface of the collet 82 (Suction surface) of the collet 42 of the bonding head 41 from below.

Next, the cleaning device according to the third embodiment will be described with reference to Fig. 21 is a block diagram of the cleaning apparatus.

The cleaning device 6B includes a fifth nozzle 62B, a carbon dioxide supply source 63 for supplying liquid carbon dioxide, an air supply source 64 for supplying compressed air (pressurized gas) And supply pipes 65b, 65c, and 65d for supplying dry ice produced by mixing the air to the fifth nozzle 62B. The cleaning device 6B further includes discharge pipes 66b and 66c for transporting foreign matter removed from the die at the fifth nozzle 62B, a dust collecting unit 67 for collecting foreign matter, Valves 68b, 68c, 68d and 68f provided between them and an ionizer 69, respectively.

The fifth nozzle 62B has the same structure as the second nozzle 62 of the first embodiment and performs cleaning in the same operation.

Next, the bonding method (semiconductor device manufacturing method) performed in the flip chip bonder according to the third embodiment will be explained with reference to FIGS. 22 to 29. FIG. 22 is a cross-sectional view of the fourth nozzle during die cleaning. 23 is a cross-sectional view of the fifth nozzle after die cleaning is completed. 24 is a cross-sectional view of the transfer head of the fifth nozzle at the time of collet cleaning. 25 is a cross-sectional view of the bonding head of the fifth nozzle when the collet is cleaned. Figs. 26 to 29 are flowcharts showing a bonding method performed in the flip chip bonder according to the third embodiment. Fig. The terminals E and F in the flow chart of Fig. 26 are connected to the terminals E and F of Fig. The terminals G to L in Fig. 27 are connected to the terminals G to L in Fig.

Step S21: The control device 7 picks up the die D by the pick-up flip head 21A as in step S1.

Step S22: The control device 7 moves the pickup flip head 21A in the same manner as in step S12.

Step S23: The control device 7 rotates the pickup flip head 21A by 180 degrees to turn the bumps (surface) of the die D so as to face the lower surface of the die D, (81).

Step S24: The control device 7 picks up the die D by the collet 82 of the transfer head 81 from the collet 22 of the pick-up flip head 21A as in step S14, Is carried out.

Step S25: The control device 7 inverts the pick-up flip head 21A so that the suction surface of the collet 22 faces downward.

Step S26: Before or concurrently with the step S25, the control device 7 moves the transfer head 81 to the upper side of the intermediate stage 31B.

Step S27: The control device 7 closes the shutter SS of the fifth nozzle 62B of the cleaning device 6B.

Step S28: After or after step S27, the control device 7 causes the transfer head 81 to descend.

Step S29: The control device 7 loads the die D held by the transfer head 81 on the intermediate stage 31B.

Step S2A: The control device 7 raises the transfer head 81 to raise the collet 82 from the die D (Fig. 22).

Step S2I: The control device 7 lowers the bonding head 41 to pick up the die D on the intermediate stage 31B. At this time, the transfer head 81 is moved backward.

Step S2J: The control device 7 raises the bonding head 41.

Step S2B: The control device 7 opens the shutter SS of the fifth nozzle 62B of the cleaning device 6B after or simultaneously with and after step S2J.

Step S2K: The control device 7 descends the bonding head 41 to move the die D held by the collet 42 to the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B, .

Step S2C: As in step S6, the control device 7 ejects powdered dry ice from the air jet port 62a, removes foreign matter adhering to the back surface of the die D and cleans the foreign matter, (62b) and discharged into the dust collecting unit 67 (Fig. 23).

Step S2L: The control device 7 raises the bonding head 41 to move (raise) the die D from the fifth nozzle 62B.

Step S2M: The control device 7 moves the bonding head 41 onto the bonding stage.

Step S2N: The control device 7 mounts the die D picked up from the intermediate stage 31B to the collet 42 of the bonding head 41 on the substrate P on the die bonding stage.

Step S2D: The control device 7 lowers the transfer head 81 and inserts the collet 82 into the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B.

Step S2E: The control device 7 ejects the powdered dry ice from the air jetting port 62a and removes the foreign substance adhering to the lower surface (attracting surface) of the collet 82 to clean it, The foreign object is sucked from the air suction port 62b and discharged to the dust collecting unit 67 (Fig. 24).

Step S2F: The control device 7 raises the transfer head 81.

Step S2G: The control device 7 moves the transfer head 81 to the transfer head transfer position.

Step S2O: The control device 7 moves the bonding head 41 onto the fifth nozzle 62B of the cleaning device 6B.

Step S2P: The control device 7 descends the collet 42 of the bonding head 41 and inserts it into the cleaning space 62c of the fifth nozzle 62B.

Step S2H: The control device 7 injects the powdered dry ice from the air jet port 62a to remove the foreign matter adhering to the lower surface (attracting surface) of the collet 42 and clean it, The foreign object is sucked from the air suction port 62b and discharged to the dust collecting unit 67 (Fig. 25).

Step S2Q: The control device 7 raises the bonding head 41 to move back.

The operation before step S21 is the same as the operation before step S1 in the first embodiment. The take-out and take-out operation of the substrate P after step S2N is the same as that of the first embodiment.

The flip chip bonder according to the third embodiment has a cleaning device function on the intermediate stage. The intermediate stage is provided with a nozzle for ejecting and sucking dry ice in powder form, and a shutter capable of loading a die thereon. Close the shutter and install the die on the shutter. Thereafter, the die is received by the bonding head, the shutter of the intermediate stage is opened, and the back side of the die picked up and held by the collet of the bonding head is cleaned by the dry ice cleaning function. When the bonding head is moving, the suction surface of the collet of the transfer head is cleaned by the dry ice cleaning function. Thereafter, the adsorption face of the collet of the bonding head which has finished bonding can also be cleaned.

According to the third embodiment, the surface of the die, the suction surface of the collet of the transfer head, and the suction surface of the collet of the bond head can be cleaned by one dry ice cleaning function. As a result, foreign matter can be prevented from accumulating, and the risk of foreign matter adhering to the surface of the wafer can be reduced.

≪ Modification 3 &

Next, a bonding method (a method of manufacturing a semiconductor device) performed in a flip chip bonder according to a modified example (modified example 3) of the third embodiment will be described with reference to Figs. 22 to 25, 29 and 30. Fig. Figs. 29 and 30 are flowcharts showing a bonding method according to Modification 3 performed in the flip chip bonder of Fig.

The bonding method according to Modification 3 is the same as the steps S21 to S25 of the bonding method according to Embodiment 3, but the other steps are different. The terminals E and F in the flow chart of Fig. 29 are connected to the terminals E and F of Fig. The terminals M to O in Fig. 29 are connected to the terminals M to O in Fig. Steps after step S24 of the bonding method according to Modification 3 will be described below.

Step S36: The control device 7 moves the transfer head 81 to above the intermediate stage 31B.

Step S37: The control device 7 descends the transfer head 81 to move the die D held by the collet 82 to the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B, .

Step S38: As in step S6, the control device 7 ejects powdered dry ice from the air injection port 62a, removes foreign matter adhering to the back surface of the die D and cleans the foreign matter, (62b) and discharged into the dust collecting unit 67 (Fig. 23).

Step S39: The control device 7 raises the transfer head 81 to move (raise) the die D from the fifth nozzle 62B.

Step S3A: After step S39, the control device 7 closes the shutter SS of the fifth nozzle 62B of the cleaning device 6B.

Step S3B: After or after step S3A, the control device 7 causes the transfer head 81 to descend.

Step S3C: The control device 7 loads the die D held by the transfer head 81 on the intermediate stage 31B.

Step S3D: The control device 7 raises the transfer head 81 to raise the collet 22 from the die D (Fig. 22) and moves the transfer head 81 from above the intermediate stage 31B .

Step S3K: After step S3D, the control device 7 moves down the bonding head 41 to pick up the die D on the intermediate stage 31B. At this time, the transfer head 81 is moved backward.

Step S3L: The control device 7 raises the bonding head 41.

Step S3E: After step S3K, the control device 7 opens the shutter SS of the fifth nozzle 62B of the cleaning device 6B.

Step S3M: The control device 7 moves the bonding head 41 onto the bonding stage.

Step S3N: The control device 7 mounts the die D picked up from the intermediate stage 31B to the collet 42 of the bonding head 41 on the substrate P on the die bonding stage.

Step S3F: The control device 7 lowers the transfer head 81 and inserts the collet 82 into the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B.

Step S3G: The control device 7 ejects the powdered dry ice from the air jet port 62a to remove the foreign matter adhering to the lower surface (attracting surface) of the collet 82 and clean it, The foreign object is sucked from the air suction port 62b and discharged to the dust collecting unit 67 (Fig. 24).

Step S3H: The control device 7 raises the transfer head 81.

Step S3J: The control device 7 moves the transfer head 81 to the transfer head transfer position.

Step S3O: The control device 7 moves the bonding head 41 onto the fifth nozzle 62B of the cleaning device 6B.

Step S3P: The control device 7 moves the collet 42 of the bonding head 41 downward into the cleaning space 62c of the fifth nozzle 62B.

Step S3I: As in step S6, the control device 7 ejects powdered dry ice from the air jet port 62a, removes foreign matters attached to the lower surface (attracting surface) of the collet 42, The foreign object is sucked from the air suction port 62b and discharged to the dust collecting unit 67 (Fig. 25).

Step S3Q: The control device 7 raises the bonding head 41 to move backward.

The operation before step S21 is the same as the operation before step S1 in the first embodiment. The take-out and take-out operation of the substrate P after step S3N is the same as that of the first embodiment.

The flip chip bonder according to Modification Example 3 has a function of a cleaning device on the intermediate stage. The intermediate stage is provided with a nozzle for ejecting and sucking dry ice in powder form, and a shutter capable of loading a die thereon. The shutter of the intermediate stage is opened, the surface of the die held by the collet of the transfer head is picked up and cleaned by the dry ice cleaning function, and then the shutter is closed to set the die on the shutter. Thereafter, the die is received by the bonding head, and when it is moving, the shutter is opened again to clean the suction surface of the collet of the transfer head by the dry ice cleaning function. Thereafter, the adsorption face of the collet of the bonding head which has finished bonding can also be cleaned.

[Example 4]

31 is a top view showing the outline of the flip chip bonder according to the fourth embodiment. Fig. 32 is a view for explaining the operation of the pickup flip head, the transfer head and the bonding head when viewed from the direction of arrow A in Fig.

The flip chip bonder 10C is roughly divided into a die supply portion 1, a pickup portion 2C, an intermediate stage portion 3C, a bonding portion 4A, a carry portion 5, a cleaning device 6C, A substrate feeding portion 9K, a substrate carrying portion 9H, and a control device 7 for monitoring and controlling the operation of each portion.

The pickup unit 2C has a stage recognition camera 24 for recognizing the back surface of the die D and the top surface (attraction surface) of the collet 22 in addition to the configuration of the pickup unit 2A.

The intermediate stage portion 3C includes an intermediate stage 31 for temporarily mounting the die D, a stage recognition camera 32 for recognizing the intermediate stage 31, a back side of the die D and a collet 22 And an under-vision camera 33 for recognizing the lower surface (attracting surface)

The cleaning device 6C cleans the back surface of the die D and the surface of the intermediate stage 31 mounted on the intermediate stage 31 from above and holds the collet 22 held on the collet 22 of the pickup flap head 21A It is possible to clean the back surface of the die D and the lower surface (suction surface) of the collet 22 from above. The cleaning device 6C cleans the surface of the die D held by the collet 82 of the transfer head 81 and the lower surface (suction surface) of the collet 82 from below, It is possible to clean the surface of the die D held by the collet 42 of the collet 42 and the lower surface (suction surface) of the collet 42 from below.

Next, the cleaning apparatus according to the fourth embodiment will be described with reference to Fig. 33 is a block diagram of the cleaning apparatus.

The cleaning device 6C includes a first nozzle 61, a second nozzle 62, a third nozzle 61A, a fourth nozzle 62C, a carbon dioxide supply source 63 for supplying liquid carbon dioxide, And an air supply source 61 for supplying compressed air (pressurized gas), and powdery dry ice produced by mixing carbon dioxide and compressed air of the liquid into a first nozzle 61, a second nozzle 62, 65d, 65g, 65h for supplying the third nozzle 61A and the fourth nozzle 62C. The cleaning apparatus 6C further includes discharge pipes 66a to 66c for transporting the foreign object removed from the die in the first nozzle 61, the second nozzle 62, the third nozzle 61A and the fourth nozzle 62C, A dust collecting unit 67 for collecting foreign matter, valves 68a to 68j provided between the supply pipe and the discharge pipe, and an ionizer 69. [

The fourth nozzle 62C has the same structure as the second nozzle 62 and performs cleaning in the same operation.

Next, the bonding method (semiconductor device manufacturing method) performed in the flip chip bonder according to the fourth embodiment will be described with reference to Figs. 35 to 38. Fig. 34 is a cross-sectional view of the fourth nozzle during die cleaning; 35 is a cross-sectional view of the transfer head of the fourth nozzle when cleaning the collet. 36 to 38 are flowcharts showing the bonding method implemented in the flip chip bonder according to the fourth embodiment. The terminals E and F in the flow chart of Fig. 36 are connected to the terminals E and F of Fig. The terminals A and B in Fig. 37 are connected to the terminals A and B in Fig.

Step S51: The control device 7 picks up the die D by the pick-up flip head 21A as in step S1.

Step S52: The control device 7 moves the pickup flip head 21A in the same manner as in step S2.

Step S53: The control device 7 rotates the pickup flip head 21A by 180 degrees and inverts the bumps (surface) of the die D so as to face the lower surface of the die D, (81).

Step S54: After or after step S53, the controller 7 controls the cleaning space 61c of the first nozzle 61 on the die D holding the collet 22 of the pick-up flip head 21A And is lowered.

Step S55: The control device 7 ejects the dry ice from the air blowing port 61a in the same manner as in step S5, and removes the foreign matter adhering to the back surface of the die D. The removed foreign matter is sucked from the air suction port 61b and discharged to the dust collecting unit 67 through the discharge pipe 66a and the like.

Step S56: The control device 7 raises the cleaning space 61c of the first nozzle 61 to move it from the die D held by the collet 22 of the pickup head 21.

Step S57: The control device 7 picks up the die D by the collet 82 of the transfer head 81 from the collet 22 of the pick-up flip head 21A, Is carried out.

Step S58: After step S57, the control device 7 moves the cleaning space 61c of the first nozzle 61 onto the collet 22 of the pick-up flip head 21A and lower it.

Step S59: As in step S5, the control device 7 ejects the dry ice from the air jet port 61a to remove the foreign matter adhering to the surface of the attracting surface of the collet 22. The removed foreign matter is sucked from the air suction port 61b and discharged to the dust collecting unit 67 through the discharge pipe 66a and the like.

Step S5A: The controller 7 raises the cleaning space 61c of the first nozzle 61 and moves it from the collet 22 of the pick-up flip head 21A.

Step S5B: The control device 7 inverts the pickup flip head 21A so that the suction surface of the collet 22 faces downward.

Step S42: After step S57, the control device 7 moves the transfer head 81 to the intermediate stage 31. Then,

Step S43: The control device 7 loads the die D held on the transfer head 81 onto the intermediate stage 31. Then,

Step S44: After step S4C, the control device 7 moves (descends) the cleaning space 61c of the third nozzle 61A onto the die D mounted on the intermediate stage 31. Then,

Step S45: As in step S3, the control device 7 ejects powdered dry ice from the air jet port 61a to remove foreign objects adhering to the surface of the die D to clean the foreign object, (61b) and discharged to the dust collecting unit 67 (Fig. 14).

Step S46: The control device 7 moves (lifts) the third nozzle 61A from the intermediate stage 31, as shown in Fig.

Step S47: The control device 7 picks up the die D from the intermediate stage 31 by the collet of the bonding head 41. Then,

Step S48: The control device 7 judges whether or not cleaning of the intermediate stage 31 is necessary by the stage recognition camera 32. [ If YES, the process proceeds to step S49. If NO, the process returns to step S43.

Step S49: The control device 7 moves (descends) the cleaning space 61c of the third nozzle 61A onto the intermediate stage 31. Then,

Step S4A: As in step S15, the control device 7 injects the dry ice from the air blowing port 61a to remove the foreign matter adhering to the surface of the intermediate stage 31 to clean the foreign matter, And is discharged to the dust collecting unit 67 (Fig. 14).

Step S4B: The control device 7 moves (lifts) the third nozzle 61A from the intermediate stage 31. [

Step S4C: The control device 7 moves the transfer head 81 above the under vision camera 33 to pick up the image of the lower surface (attracting surface) of the collet 82. [

Step S4D: The control device 7 judges whether or not cleaning is necessary from the picked-up image of the lower surface (suction surface) of the collet 22. If YES, the process proceeds to step S4E. If NO, the process returns to step S41.

Step S4E: The control device 7 moves the transfer head 81 to the upper side of the cleaning device and lowers the collet 82 into the cleaning space 62c of the fourth nozzle 62C.

Step S4F: As in step S6, the control device 7 injects powdered dry ice from the air injection port 62a, removes foreign matter adhering to the adsorption face of the collet 82 and cleans the foreign object, And sucked from the suction port 62b and discharged to the dust collecting unit 67 (Fig. 34).

Step S4G: The control device 7 moves the bonding head 41 above the undervision camera 45 so that the lower surface of the die D held on the collet 42 of the bonding head 41 ).

Step S4H: The control device 7 judges whether cleaning is necessary from the picked-up image of the lower surface (surface) of the die D held in the collet 42 of the bonding head 41. [ If YES, the process proceeds to step S4I. If NO, the process proceeds to step S4K.

Step S4I: The control device 7 moves the bonding head 41 to the upper side of the cleaning device and lowers the die to put the die D in the cleaning space 62c of the second nozzle 62.

Step S4J: The control device 7 ejects the powdered dry ice from the air jetting port 62a and removes the foreign matter adhered to the surface of the die D to clean the removed dry foreign matter as in step S6, (62b) and discharged to the dust collecting unit (67).

Step S4K: The control device 7 raises the bonding head 41 to move (raise) the die D from the second nozzle 62, and moves the bonding head 41 to the bonding stage.

Step S4L: The control device 7 lowers the bonding head 41 and mounts the die D held on the bonding head 41 on the substrate P

Step S4M: The control device 7 moves the bonding head 41 to the upper side of the under vision camera 45, and picks up the lower surface (attracting surface) of the collet 42.

Step S4N: The control device 7 judges whether cleaning is necessary from the image picked up on the lower surface (attracting surface) of the collet 42 of the bonding head 41. If YES, the process proceeds to step S4O. If NO, the process proceeds to step S47.

Step S4O: The control device 7 moves the bonding head 41 to the upper side of the cleaning device and lowers the collet 42 into the cleaning space of the second nozzle 62.

Step S4P: As in step S6, the control device 7 ejects powdered dry ice from the air jet port 62a, removes foreign matter attached to the lower surface (attracting surface) of the collet 42, The foreign object is sucked from the air suction port 62b and discharged to the dust collecting unit 67. [

The operation before step S51 is the same as that before step S1 of the first embodiment. The take-out and take-out operation of the substrate P after step S4L is the same as that of the first embodiment.

According to the fourth embodiment, by cleaning both the die surface and the back surface foreign matter generated during pickup of the die from the wafer, the foreign matter on the intermediate stage accumulated thereby, the pick-up head attached to the collet during die transportation, and the bonding head, The foreign matter on the front and back surfaces of the die can be greatly reduced.

<Modification 4>

Next, a bonding method (semiconductor device manufacturing method) performed in the flip chip bonder according to the modified example (modified example 4) of the fourth embodiment will be described with reference to Figs. 34, 35, and 39 to 41. Fig. Figs. 39 to 41 are flow charts showing the bonding method according to Modification 4 carried out in the flip chip bonder of Fig.

In the bonding method according to Modification 4, the steps S51 to S54 of the bonding method according to Example 4 are the same, but the other steps are different. The terminals E and F in the flow chart of Fig. 39 are connected to the terminals E and F of Fig. 36, the terminals G and H of Fig. 39 are connected to G and H of Fig. 40, C, and D, respectively.

The steps after Step S57 of the bonding method according to Modification Example 4 will be described below.

Step S61: The control device 7 moves the transfer head 81 to above the fourth nozzle 62C of the cleaning device 6C.

Step S62: The control device 7 descends the transfer head 81 to move the die D held by the collet 82 to the cleaning space 62c of the fourth nozzle 62C of the cleaning device 6C, .

Step S63: As in step S6, the controller 7 ejects the powdered dry ice from the air jet port 62a, removes the foreign matter adhered to the surface of the die D and cleans the foreign matter, (62b) and discharged to the dust collecting unit 67 (Fig. 33).

Step S64: The control device 7 raises the transfer head 81 to move (raise) the die D from the fourth nozzle 62C.

Step S65: The control device 7 moves the transfer head 81 to above the intermediate stage 31. Then,

Step S66: The control device 7 causes the transfer head 81 to descend.

Step S67: The control device 7 loads the die D held on the transfer head 81 onto the intermediate stage 31. Then,

Step S68: The control device 7 raises the transfer head 81 and raises the collet 22 from the die D.

Step S69: The control device 7 moves the transfer head 81 to above the fourth nozzle 62C of the cleaning device 6C.

Step S6A: The control device 7 lowers the transfer head 81 and inserts the collet 82 into the cleaning space 62c of the fourth nozzle 62C of the cleaning device 6C.

Step S6B: As in step S6, the control device 7 injects the powdered dry ice from the air jet port 62a, removes the foreign matter adhering to the adsorption face of the collet to clean it, and removes foreign matter from the air inlet port 62b And is discharged to the dust collecting unit 67 (Fig. 33).

Step S6C: The control device 7 raises the transfer head 81 to move (raise) the die D from the fourth nozzle 62C.

Step S6D: The control device 7 moves the transfer head 81 to the delivery position of the die D

After step S68, step S44 and subsequent steps of FIG. 40 are performed. Steps S44 to S4B of Modification Example 4 are the same as Steps S44 to S4B of Embodiment 4. After step S47 in Fig. 40, step S4K and subsequent steps in Fig. 41 are performed. Steps S4K to S4P of Modification Example 4 are the same as Steps S4K to S4P of Embodiment 4.

While the invention made by the present inventors has been specifically described on the basis of the embodiments, the examples, and the modifications, the invention is not limited to the above-described embodiments and modifications, needless to say, various modifications are possible.

For example, in the embodiment and the modified examples, the cleaning device has been described in which the liquid carbon dioxide and the compressed air are mixed to generate dry ice in the form of powder. However, the present invention is not limited to this, and the pelletizer may be used, Dry ice on the pellet may be formed from dry ice on the pellet by a pulverizer, and dry ice of the pulverized dry ice may be supplied to the nozzle with a carrier gas of a predetermined pressure.

In the embodiment and the modification example, cleaning with a nozzle covering the entire die has been described. However, the invention is not limited to this, and it is also possible that nozzles of horizontal width (widthwise) of the die width are scanned for cleaning by a die length. Further, a plurality of thin nozzles may be covered to cover the entire die. Further, the thin nozzle may be scanned by scanning the entire die.

In Embodiments 1, 2, and 4, the cleaning apparatus has a plurality of nozzles. However, the present invention is not limited to this, and a plurality of cleaning apparatuses each having one nozzle may be provided.

In the fourth embodiment and the fourth embodiment, it is described that the cleaning is performed by the underside camera before cleaning. However, the present invention is not limited to this, and the back surface of the die, It may be checked with a camera, and in the case of a predetermined number of foreign objects or more, cleaning may be performed before bonding. Further, it is also possible to check the back side of the die with an under vision camera and perform cleaning until the foreign object disappears. It is also possible to check the collet with an under vision camera and perform cleaning until the foreign object disappears. Thereby, since the die with the foreign object is not laminated and mounted, the product defects can be reduced.

In Embodiments 4 and 4, although it is not determined whether or not cleaning with a camera is necessary before the cleaning of the collet of the pick-up flip head, it may be determined whether or not cleaning is necessary and cleaned.

In Embodiments 4 and 4, the back surface of the die D held on the collet of the pick-up flip head is not cleaned, but may be cleaned with the first nozzle. In this case, it may be determined whether or not the camera needs cleaning.

In the fourth embodiment and the fourth embodiment, the back surface of the die is cleaned twice with the first nozzle and the third nozzle. However, either of the cleaning may be performed, and after the cleaning with the first nozzle, And may be cleaned with the third nozzle when necessary.

Unlike the fourth embodiment and the fourth modification, the first embodiment, the first modification, the second modification, the second embodiment, the third embodiment, and the third modification do not perform imaging with the substrate recognition camera or the under vision camera , The fourth embodiment, and the fourth modification, and determine whether cleaning is necessary based on the imaging information.

In the embodiments and the modifications, dry ice is ejected through the countermeasure for static electricity and ionizer. However, the present invention is not limited to this. The nozzle and the intermediate stage may be made of a conductive material (metal, carbon resin or the like) It may be grounded. Both of the ionizer and the conductive material to be grounded may be performed.

In Embodiment 1 and Modifications 1 and 2, a flip chip bonder is described in which a die is picked up from a die supply portion by a pick-up head and flipped (inverted) to transfer the die to the bonding head and bonded to the substrate with a bonding head. The die is picked up from the die feeder by the pick-up head, is mounted on the intermediate stage, the die mounted on the intermediate stage is inverted at the intermediate stage and transferred to a separate intermediate stage, .

When the bonding time and the cleaning time are long, the bonding head for bonding the flip die may be provided with a plurality of bonding heads to alternately perform chip cleaning, bonding, and collet cleaning.

Although the flip chip bonders have been described in the embodiments and the modified examples, the present invention is not limited thereto. The present invention is also applicable to a die sorter that picks up a die from a die supply part, reverses the die,

1:
11: wafer
2: Pickup section
21: Pickup head
22: Collet
3: intermediate stage part
31: Intermediate stage
4:
41: bonding head
42: Collet
6: Cleaning device
7: Control device
10: flip chip bonder
D: Die
P: substrate

Claims (33)

As a flip chip bonder,
A die supply portion for holding a die having bumps,
A bonding stage for loading the die onto a substrate or an already mounted die,
A first head having a collet for adsorbing the die,
A second head having a collet for adsorbing the die,
A cleaning device for cleaning the die positioned between the die supply part and the bonding stage with dry ice,
And,
The first head picks up the die from the die supply unit and inverts the wafer up and down,
And the second head picks up the die from the first head. The method according to claim 1,
Wherein the cleaning device has a first nozzle for ejecting the dry ice,
Wherein the first nozzle cleans the back side of the die picked up by the first head opposite the side having the bumps. 3. The method according to claim 1 or 2,
Wherein the cleaning device has a second nozzle for ejecting the dry ice,
The second nozzle cleaning the surface of the die having the bumps picked up by the second head from the first head. 3. The method of claim 2,
Wherein the first nozzle cleans the collet of the first head. The method of claim 3,
And the second nozzle cleans the collet of the second head. The method according to claim 1,
Wherein the second head is a bonding head for loading the die onto the substrate or an already-mounted die. The method according to claim 1,
An intermediate stage on which the die is loaded by the second head,
And a third head having a collet that adsorbs the die
Further comprising:
The third head picks up the die from the intermediate stage and loads it onto the substrate or an already mounted die,
The cleaning device has a third nozzle for ejecting dry ice,
And the third nozzle cleans the back side of the die opposite to the side having the bumps on the intermediate stage. 8. The method of claim 7,
The cleaning apparatus further includes a second nozzle for spraying dry ice,
The second nozzle cleaning the surface of the die having the bumps picked up from the intermediate stage by the third head. 9. The method according to claim 7 or 8,
And the third nozzle cleans the upper surface of the intermediate stage. 9. The method of claim 8,
And the second nozzle cleans the collet of the third head. 8. The method of claim 7,
Wherein the intermediate stage is movable between a position for transferring the die from the second head, a position of the third nozzle, and a position for transferring the third head and the die. 8. The method of claim 7,
A plurality of intermediate stages are provided, and a position for transferring the die from the first head, a position of the third nozzle, and a position for transferring the third head and the die are moved Flip chip bonders available. 10. The method of claim 9,
Further comprising a stage recognition camera for imaging the back surface of the die and the intermediate stage, which are stacked on the intermediate stage,
And the third nozzle cleans the die back and the intermediate stage loaded on the intermediate stage based on the image pickup information of the stage recognition camera. 11. The method of claim 10,
Further comprising a first under vision camera for capturing a surface of said die held on said third head and a collet of said third head,
The second nozzle cleans the collet of the third head and the surface of the die held on the third head based on the imaging information of the first under vision camera. 9. The method of claim 8,
The cleaning apparatus further includes a fourth nozzle for spraying dry ice,
The fourth nozzle cleaning the surface of the die from which the second head picked up the die from the first head. 9. The method of claim 8,
And the fourth nozzle cleans the collet of the second head. 17. The method of claim 16,
Further comprising a second under vision camera for capturing a collet of the second head,
The fourth nozzle cleans the collet of the second head based on imaging information of the second under vision camera. 18. The method according to claim 14 or 17,
The cleaning apparatus further includes a first nozzle and a second nozzle for spraying the dry ice,
Wherein the first nozzle cleans the collet of the first head and the back of the die picked up by the first head. 19. The method of claim 18,
Further comprising a second stage recognition camera for picking up a collet of the first head and a back surface of a die held by the first head,
Wherein the first nozzle cleans the collet of the first head and the back surface of the die held by the first head based on the imaging information of the second stage recognition camera. The method according to claim 1,
An intermediate stage on which the die is loaded by the second head,
A third head for picking up the die from the intermediate stage and loading it onto the substrate or an already-
Further comprising:
The third head having a collet for adsorbing the die,
The cleaning device has a fifth nozzle for ejecting dry ice,
Wherein the intermediate stage comprises a stage capable of opening and closing on the fifth nozzle,
The die is loaded on the stage when the stage is closed,
The fifth nozzle having a surface with the bumps of the die held in the second head when the stage is open, a collet of the second head with the die removed, A flip chip bonder for cleaning the surface of the die picked up from the stage and the collet of the third head. A method of manufacturing a semiconductor device,
(a) preparing a wafer ring for holding a die having bumps,
(b) preparing a substrate on which the die is mounted,
(c) picking up the die from the wafer ring and flipping it upside down,
(d) after the step (c), washing the die with dry ice,
(e) after the step (c), picking up the die,
(f) after the step (d), the step of loading the die onto the substrate or the already-mounted die
And a step of forming the semiconductor device. 22. The method of claim 21,
(C) picking up the die with a first head having a collet,
(E) picking up the die from the first head with a second head having a collet,
Wherein the step (f) includes loading the die with the second head onto the substrate or the already-mounted die. 23. The method of claim 22,
The step (d)
(d1) cleaning the back surface of the die picked up by the first head,
(d2) a step of cleaning the surface of the die having the bumps picked up by the second head from the first head
And a step of forming the semiconductor device. 24. The method of claim 23,
The step (d)
(d3) cleaning the collet of the first head. 22. The method of claim 21,
(C) picking up the die with a first head having a collet,
(E) picking up the die from the first head with a second head having a collet and loading it onto the intermediate stage,
Wherein the step (f) picks up and loads the die from the intermediate stage with a third head having a collet. 26. The method of claim 25,
The step (d)
(d1) cleaning a back side of the die loaded on the intermediate stage opposite to the side having the bumps,
(d2) a step of cleaning the die mounting surface of the intermediate stage
And a step of forming the semiconductor device. 26. The method of claim 25,
Wherein the intermediate stage has a stage capable of opening and closing,
The step (d)
(d1) cleaning the back side of the die held on the second head opposite to the side having the bumps in a state in which the stage is opened;
(d2) loading the die on the stage in a state in which the stage is closed,
(d3) cleaning the adsorption face of the collet of the second head while the stage is opened,
(d4) a step of cleaning the adsorption face of the collet of the third head in a state in which the stage is opened
And a step of forming the semiconductor device. 27. The method of claim 26,
The step (d)
(d3) cleaning the surface of the die having the bumps held by the collet of the third head, and
(d4) a step of cleaning the adsorption face of the collet of the third head
And a step of forming the semiconductor device. 29. The method of claim 28,
The step (d)
(d5) cleaning the surface of the die held by the collet of the second head, and
(d6) cleaning the adsorption face of the collet of the second head
Wherein the semiconductor device is a semiconductor device. 30. The method of claim 29,
The step (d)
(d7) cleaning the back surface of the die held by the collet of the first head,
(d8) cleaning the adsorption face of the collet of the first head
Wherein the semiconductor device is a semiconductor device. 28. The method of claim 27,
The step (d)
(d9) imaging the mounting surface side of the intermediate stage,
(d10) a step of picking up a lower face side of the collet of the third head
Further comprising:
The step (d2) may include a step of cleaning the intermediate stage based on imaging information of the step (d9)
The step (d3) may include cleaning the surface of the die held by the collet of the third head based on the imaging information of the step (d10)
Wherein the step (d4) cleans the adsorption face of the collet of the third head based on the imaging information of the step (d10). 30. The method of claim 29,
The step (d)
(d11) imaging the surface of the die held by the collet of the second head,
(d12) a step of picking up an image of the adsorption face of the collet of the second head
Further comprising:
The step (d5) may include cleaning the surface of the die held by the collet of the second head based on the sensing information of the step (d11)
The step (d6) further comprises cleaning the collet of the second head based on the sensing information of the step (d12). 31. The method of claim 30,
The step (d)
(d13) imaging a back surface of the die held by the collet of the first head,
(d14) a step of picking up an image of the adsorption face of the collet of the first head
Further comprising:
The step (d7) may include cleaning the surface of the die held by the collet of the first head based on the sensing information of the step (d13)
(D8) cleaning the collet of the first head based on the imaging information of the step (d14).

Images