JP2018056169A - Flip chip bonder and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a flip chip bonder for cleaning a die.SOLUTION: A flip chip bonder comprises: a die supply part for holding a die having bumps; a bonding stage for placing the die on a substrate or on a packaged die; a first head for picking up the die from the die supply part and inverting the die upside down; a second head for picking up the die from the first head; and a cleaning unit for cleaning the die lying between the die supply part and the bonding stage by dry ice.SELECTED DRAWING: Figure 2

Description

  The present disclosure relates to a flip chip bonder, and is applicable to, for example, a flip chip bonder including a cleaning device.

  Generally, in a die bonder in which a semiconductor chip called a die is mounted on the surface of, for example, a wiring board or a lead frame (hereinafter collectively referred to as a board), the die is generally used by using a suction nozzle such as a collet. The operation (work) of transporting the substrate onto the substrate, applying a pressing force, and performing bonding by heating the bonding material is repeatedly performed. Furthermore, among the die bonders, there is a flip chip bonder in which a picked up die (a die having a bump on the surface) is flipped over and mounted on a substrate.

  The die bonder includes a substrate that cleans the surface of the substrate (for example, Japanese Patent Application Laid-Open No. 2012-199458 (Patent Document 1)), and a device that cleans the adsorption surface of the collet (for example, Japanese Patent Application Laid-Open No. )).

JP 2012-199458 A JP, 2006-58575, A

Adhesive residue from back grinding tape affixed to the wafer surface or dicing tape affixed to the back surface of the wafer occurs. For example, in a flip chip bonder, adhesive residue or the like remains on the bump surface (die surface). There is a possibility. Neither Patent Document 1 nor Patent Document 2 cleans the die itself.
An object of the present disclosure is to provide a flip chip bonder for cleaning a die.
Other problems and novel features will become apparent from the description of the specification and the accompanying drawings.

An outline of typical ones of the present disclosure will be briefly described as follows.
That is, the flip chip bonder includes a die supply unit for holding a die having bumps, a bonding stage for placing the die on a substrate or a die already mounted, and picking up the die from the die supply unit A first head that is turned upside down, a second head that picks up the die from the first head, and a cleaning device that cleans the die located between the die supply unit and the bonding stage with dry ice, Is provided.

  According to the flip chip bonder, it is possible to clean the die.

The conceptual diagram which looked at the flip chip bonder concerning Example 1 from the top FIG. 1 is a view for explaining operations of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. Schematic cross-sectional view showing the main part of the die supply unit of FIG. Block diagram of the cleaning apparatus of FIG. Sectional drawing of the 1st nozzle of FIG. 4 and its periphery Sectional drawing of the 2nd nozzle of FIG. 4 and its periphery Operation flow diagram of flip chip bonder in FIG. FIG. 1 is an operation flowchart according to the first modification of the flip chip bonder of FIG. FIG. 1 is an operation flowchart according to the first modification of the flip chip bonder of FIG. FIG. 1 is an operation flowchart according to the second modification of the flip chip bonder of FIG. The conceptual diagram which looked at the flip chip bonder concerning Example 2 from the top FIG. 11 is a diagram for explaining the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. Block diagram of the cleaning apparatus of FIG. Sectional drawing of the 3rd nozzle of FIG. 13 and its periphery Sectional drawing of the 3rd nozzle of FIG. 13 and its periphery Sectional drawing of the 3rd nozzle of FIG. 13 and its periphery Operation flow diagram of flip chip bonder of FIG. Operation flow diagram of flip chip bonder of FIG. Schematic view of flip chip bonder according to embodiment 3 as seen from above 19 is a diagram for explaining the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. FIG. 19 is a block diagram of the cleaning apparatus. Sectional drawing of the 5th nozzle of FIG. 21 and its periphery Sectional drawing of the 5th nozzle of FIG. 21 and its periphery Sectional drawing of the 5th nozzle of FIG. 21 and its periphery Sectional drawing of the 5th nozzle of FIG. 21 and its periphery FIG. 19 is a flowchart of the operation of the flip chip bonder. FIG. 19 is a flowchart of the operation of the flip chip bonder. FIG. 19 is a flowchart of the operation of the flip chip bonder. FIG. 19 is an operation flowchart according to the third modification of the flip chip bonder. FIG. 19 is an operation flowchart according to the third modification of the flip chip bonder. Schematic view of flip chip bonder according to embodiment 4 viewed from above 31 is a diagram for explaining the operations of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. FIG. 31 is a block diagram of the cleaning apparatus. FIG. 33 is a sectional view of the fourth nozzle and its surroundings. FIG. 33 is a sectional view of the fourth nozzle and its surroundings. Operation flow diagram of flip chip bonder of FIG. Operation flow diagram of flip chip bonder of FIG. Operation flow diagram of flip chip bonder of FIG. The operation | movement flowchart which concerns on the modification 4 of the flip chip bonder of FIG. The operation | movement flowchart which concerns on the modification 4 of the flip chip bonder of FIG. The operation | movement flowchart which concerns on the modification 4 of the flip chip bonder of FIG.

  Hereinafter, examples and modifications will be described with reference to the drawings. However, in the following description, the same components may be denoted by the same reference numerals and repeated description may be omitted. In order to clarify the description, the drawings may be schematically represented with respect to the width, thickness, shape, etc. of each part as compared to the actual embodiment, but are merely examples, and the interpretation of the present invention is not limited to them. It is not limited.

The semiconductor manufacturing apparatus according to the embodiment cleans only the front surface of the die, only the back surface, or both the front and back surfaces, after picking up the die from the wafer and before bonding onto a workpiece such as a substrate or the die. In addition to the die, the collet and intermediate stage may be washed. Dry ice (CO ₂ ) is preferably used for cleaning.

FIG. 1 is a schematic top view of the flip chip bonder according to the first embodiment. FIG. 2 is a diagram for explaining the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG.
The flip chip bonder 10 is roughly divided into a die supply unit 1, a pickup unit 2, a bonding unit 4, a transport unit 5, a cleaning device 6, a substrate supply unit 9 K, a substrate carry-out unit 9 H, and monitors the operation of each unit. And a control device 7 for controlling.

  First, the die supply unit 1 supplies a die D to be mounted on the substrate P. The die supply unit 1 includes a wafer holding table 12 that holds the wafer 11 and a push-up unit 13 indicated by a dotted line that pushes up the die D from the wafer 11. The die supply unit 1 is moved in the XY directions by a driving unit (not shown), and moves the die D to be picked up to the position of the push-up unit 13.

  The pickup unit 2 includes a collet 22 that attracts the die D from the die supply unit 1, a pickup head 21 that picks up the die with the collet 22 at the tip, and a Y drive unit 23 that moves the pickup head 21 in the Y direction. The pickup head 21 as the first head has driving units (not shown) that move the collet 22 up and down, rotate, reverse, and move in the X direction.

  With such a configuration, the pickup head 21 picks up the die, rotates the pickup head 21 by 180 degrees, inverts the bump surface (front surface) of the die D, faces the lower surface, and passes the die D to the bonding head 41. To.

  The bonding unit 4 receives the inverted die D from the pickup head 21 and bonds it by place or thermocompression on the flux of the substrate P that has been conveyed, or stacks on the die that has already been bonded onto the substrate P. Bond in shape. Similar to the pickup head 21, the bonding unit 4 includes a bonding head 41 including a collet 42 that sucks and holds the die D at the tip, a Y driving unit 43 that moves the bonding head 41 in the Y direction, and a position recognition mark ( And a substrate recognition camera 44 for recognizing the bonding position.

  With such a configuration, the bonding head 41 as the second head receives the inverted die D from the pickup head 21, corrects the pickup position / orientation based on the imaging data of the undervision camera 45, and The die D is bonded to the substrate P based on the imaging data.

  The cleaning device 6 includes a first nozzle 61 that cleans the back surface of the die D from above and a second nozzle 62 that cleans the surface (surface with bumps) of the die D from below. The first nozzle 61 can clean the collet 22 in addition to the die D held by the collet 22 of the pickup head 21 that picks up the die D from the wafer 11. The second nozzle 62 can clean the collet 42 in addition to the die D held by the collet 42 of the bonding head 41 that picks up the die D from the pickup head 21.

  The transport unit 5 includes a substrate transport pallet 51 on which one or a plurality of workpieces (four in FIG. 1) are placed, and a pallet rail 52 on which the substrate transport pallet 51 moves, and is provided in parallel. It has the 1st, 2nd conveyance part of the same structure. The substrate transfer pallet 51 is moved by driving a nut (not shown) provided on the substrate transfer pallet 51 with a ball screw (not shown) provided along the pallet rail 52.

  With this configuration, the substrate transport pallet 51 places the substrate P on the substrate supply unit 9K, and bonds the die D to the substrate P along the pallet rail 52 (bonding stage BS (first bonding stage BS1, It moves to 2nd bonding stage BS2)), moves to the board | substrate carrying-out part 9H after bonding, and passes the board | substrate P to the board | substrate carrying-out part 9H. The first and second transfer units are driven independently of each other, and while the die D is being bonded to the substrate P placed on one substrate transfer pallet 51, the other substrate transfer pallet 51 carries out the substrate P. Returning to the substrate supply unit 9K, preparations such as mounting a new substrate P are made.

  The control device 7 includes a memory that stores a program (software) that monitors and controls the operation of each unit of the flip chip bonder 10 and a central processing unit (CPU) that executes the program stored in the memory. For example, the control device 7 takes in various information such as the image information from the substrate recognition camera 44 and the undervision camera 45 and the position of the bonding head 41, and each component such as the bonding operation of the bonding head 41 and the cleaning operation of the cleaning device 6. Control each operation.

  FIG. 3 is a schematic sectional view showing the main part of the die supply unit of FIG. The die supply unit 1 includes an expand ring 15 that holds a wafer ring 14, a support ring 17 that horizontally positions a dicing tape 16 that is held by the wafer ring 14 and is held by the wafer ring 14 and to which a plurality of dies D are adhered, And a push-up unit 13 for pushing the die D upward. In order to pick up a predetermined die D, the push-up unit 13 is moved up and down by a drive mechanism (not shown), and the die supply unit 1 is moved in the horizontal direction.

  The die supply unit 1 lowers the expand ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held on the wafer ring 14 is stretched, and the distance between the dies D is increased. In such a state, the die supply unit 1 improves the pickup property of the die D by pushing up the die D from below the die by the push-up unit 13.

  Next, the flip-chip bonder cleaning apparatus according to the first embodiment will be described with reference to FIGS. FIG. 4 is a block diagram of the cleaning apparatus of FIG. FIG. 5 is a cross-sectional view of the first nozzle of FIG. 6 is a cross-sectional view of the second nozzle of FIG.

  As shown in FIG. 4, the cleaning device 6 supplies a first nozzle 61, a second nozzle 62, a carbon dioxide supply source 63 that supplies liquid carbon dioxide, and compressed air (pressurized gas). An air supply source 64 and supply pipes 65 a to 65 d that supply powdery dry ice generated by mixing liquid carbon dioxide and compressed air to the first nozzle 61 and the second nozzle 62 are provided. The cleaning device 6 further includes discharge pipes 66a to 66c that transport foreign matters removed from the die by the first nozzle 61 and the second nozzle 62, a dust collection unit 67 that collects foreign matters, and between supply pipes and discharge pipes. And valves 68a to 68f and an ionizer 69.

  A supply pipe 65 a and a discharge pipe 66 a are connected to the first nozzle 61. As shown in FIG. 5, the first nozzle 61 includes a circular air outlet 61a provided at the center, an air inlet 61b provided so as to surround the outlet in a ring shape, an air outlet 61a and an air A space 61c that is provided between the suction port 61b and covers the die D. As a result, the foreign matter blown off by the air discharged from the air blowing port 61a is immediately sucked by the air suction port 61b as shown by the arrow in FIG. 3, and finally discarded.

  A supply pipe 65b and a discharge pipe 66b are connected to the second nozzle 62. As shown in FIG. 6, the second nozzle 62 includes a circular air outlet 62 a provided in the center portion and an air inlet provided so as to surround the outlet in a ring shape, similarly to the first nozzle 61. 62b, and a cleaning space 62c that is provided between the air outlet 62a and the air inlet 62b and covers the die D.

  The first nozzle 61 is connected to a carbon dioxide supply source 63 that supplies liquid carbon dioxide via a supply pipe 65a, a valve 68a, supply pipes 65c and 65d, a valve 68c, and a supply pipe 65e. The first nozzle 61 is connected to an air supply source 64 that supplies compressed air (compressed air) via a supply pipe 65a, a valve 68a, supply pipes 65c and 65d, a valve 68d, and a supply pipe 65f. Yes. An ionizer (antistatic means) 59 for ionizing the air supplied from the air supply source 64 is provided between the supply pipe 65c and the supply pipe 65d. The first nozzle 61 is connected to the dust collection unit 67 via a discharge pipe 66a, a valve 68e, and a discharge pipe 66c.

  The second nozzle 62 is connected to a carbon dioxide supply source 63 that supplies liquid carbon dioxide via a supply pipe 65b, a valve 68a, supply pipes 65c and 65d, a valve 68c, and a supply pipe 65e. The second nozzle 62 is connected to an air supply source 64 that supplies compressed air (compressed air) via a supply pipe 65b, a valve 68a, supply pipes 65c and 65d, a valve 68d, and a supply pipe 65f. Yes. The second nozzle 62 is connected to the dust collection unit 67 via the discharge pipe 66b, the valve 68f, and the discharge pipe 66c.

  Next, a bonding method (a semiconductor device manufacturing method) performed in the flip chip bonder according to the first embodiment will be described with reference to FIG. FIG. 7 is a flowchart illustrating a bonding method performed by the flip chip bonder according to the embodiment.

  Step S1: The controller 7 moves the wafer holder 12 so that the die D to be picked up is positioned directly above the push-up unit 13, and positions the separation target die on the push-up unit 13 and the collet 22. The push-up unit 13 is moved so that the upper surface of the push-up unit 13 contacts the back surface of the dicing tape 16. At this time, the control device 7 lifts the dicing tape 16 and sucks it onto the upper surface of the unit 13. The control device 7 lowers the collet 22 while evacuating it, makes it land on the die D to be peeled off, and sucks the die D. The control device 7 raises the collet 22 and peels the die D from the dicing tape 16. Thereby, the die D is picked up by the pickup head 21.

  Step S2: The control device 7 moves the pickup head 21.

  Step S <b> 3: The control device 7 rotates the pickup head 21 by 180 degrees, inverts the bump surface (front surface) of the die D so as to face the lower surface, and put the die D into the bonding head 41.

  Step S4: After or in parallel with step S3, the control device 7 moves the cleaning space 61c of the first nozzle 61 onto the die D held by the collet 22 of the pickup head 21 and lowers it.

  Step S5: The control device 7 supplies liquid carbon dioxide from the carbon dioxide supply source 63 to the supply pipe 65e, and supplies air from the air supply source 64 to the supply pipe 65f.

  The control device 7 supplies liquid carbon dioxide from the carbon dioxide supply source 63 to the supply pipe 65d, and supplies air from the air supply source 64 to the supply pipe 65d for mixing. As a result, part of the liquid carbon dioxide is vaporized and loses heat (vaporization heat), the temperature of the liquid carbon dioxide falls below the freezing point, and dry ice (solid carbon dioxide) is generated. Thus, dry ice obtained by releasing liquid carbon dioxide into the atmosphere of the cleaning space 62c is in a very fine powder form.

  When this powdery dry ice is sprayed from the air outlet 61a and collides with the die D, the dry ice is deformed, crushed and sublimated. Foreign matter adhering to the back surface of the die D is removed by expansion energy generated by sublimation of dry ice. The removed foreign matter is sucked from the air suction port 61b and discharged to the dust collecting unit 67 through the discharge pipe 66a and the like. The supply amount of liquid carbon dioxide and air is adjusted so that an amount of dry ice suitable for cleaning the die D is jetted from the air outlet 61a.

  Since the dry ice described above has a low hardness and is fine, this cleaning does not damage the die D. In addition, the cleaning device 6 includes an ionizer 69 that appropriately ionizes the compressed air supplied from the air supply source 64 in the supply pipe, thereby preventing the powdery dry ice from being charged and damaging the die D. Can be prevented.

  Step S6: The control device 7 raises the cleaning space 61c of the first nozzle 61 and moves it from above the die D held by the collet 22 of the pickup head 21.

  Step S7: The control device 7 picks up the die D from the collet 22 of the pickup head 21 by the collet 42 of the bonding head 41, and delivers the die D.

  Step S8: The control device 7 moves the bonding head 41 to the cleaning position (directly above the second nozzle 62), and moves the die D held by the collet 42 of the bonding head 41 to the cleaning space 62c of the second nozzle 62. Let

  Step S9: As in step S5, the control device 7 ejects dry ice from the air outlet 62a to remove the foreign matter adhering to the surface of the die D. The removed foreign matter is sucked from the air suction port 62b and discharged to the dust collecting unit 67 through the discharge pipe 66b and the like.

  Step SA: The control device 7 moves the die D held by the collet 42 of the bonding head 41 onto the substrate P.

  Step SB: The control device 7 places the die D picked up from the collet 22 of the pickup head 21 by the collet 42 of the bonding head 41 on the substrate P.

  Step SC: After or in parallel with step S8, the control device 7 reverses the pickup head 21 so that the suction surface of the collet 22 faces downward.

  Step SD: The control device 7 moves the pickup head 21 to the pickup position.

  Prior to step S 1, the wafer ring 14 holding the dicing tape 16 to which the die D divided from the wafer 11 is attached is stored in a wafer cassette (not shown) and carried into the flip chip bonder 10. The control device 7 supplies the wafer ring 14 from the wafer cassette filled with the wafer ring 14 to the die supply unit 1. Also, the substrate P is prepared and carried into the flip chip bonder 10. The control device 7 places the substrate P on the substrate transport pallet 51 by the substrate supply unit 9K.

  Further, after step SB, the control device 7 takes out the substrate P to which the die D is bonded from the substrate transport pallet 51 by the substrate carry-out unit 9H. The substrate P is unloaded from the flip chip bonder 10.

In the flip chip bonder, glue bumps or the like may occur on the bump surface, resulting in poor connection. In the first embodiment, dry ice (CO ₂ ) cleaning is performed immediately before mounting on bump products whose pitch is further reduced in the future. Thereby, the adhesive residue from the back grinding tape stuck on the front surface of the wafer or the dicing tape stuck on the back surface of the wafer and the adhesion of foreign matters in the tray can be removed before mounting on the substrate. Furthermore, foreign matters can be removed without damaging the bumps. Connection failures due to foreign object biting can be reduced.

  When the die D has TSV (Trough Silicon Via (Si through electrode)), the other die is laminated on the back surface, so that the cleaning in step S5 is effective. If the die D does not have a TSV and is not stacked, step S5 may not be executed. A cleaning device may also be provided on the substrate side to clean the substrate land side at the same time.

<Modification 1>
Next, a first modification of the bonding method (semiconductor device manufacturing method) performed in the flip chip bonder according to the first embodiment will be described with reference to FIGS. FIG. 8 is a flowchart showing a bonding method according to the first modification performed by the flip chip bonder of FIG. Terminals A and B in the flowchart of FIG. 8 are connected to terminals A and B of FIG.

  In the bonding method according to the first modification, in addition to the bonding method according to the embodiment, the collet 22 of the pickup head 21 is also cleaned by the first nozzle 61 of the cleaning device 6. Hereinafter, additional steps will be described.

  Step SE: After step S7, the control device 7 moves the cleaning space 61c of the first nozzle 61 onto the collet 22 of the pickup head 21 and lowers it.

  Step SF: The control device 7 ejects dry ice from the air outlet 61a and removes foreign matter adhering to the surface of the suction surface of the collet 22 as in step S5. The removed foreign matter is sucked from the air suction port 61b and discharged to the dust collecting unit 67 through the discharge pipe 66a and the like.

  Step SG: The control device 7 raises the cleaning space 61c of the first nozzle 61 and moves it from above the collet 22 of the pickup head 21.

<Modification 2>
Next, a second modification of the bonding method (semiconductor device manufacturing method) performed in the flip chip bonder according to the first embodiment will be described with reference to FIG. FIG. 10 is a flowchart showing a bonding method according to the second modification performed by the flip chip bonder of FIG. Terminals A and B in the flowchart of FIG. 10 are connected to terminals A and B of FIG.

  In the bonding method according to the second modification, in addition to the bonding method according to the first modification, the collet 42 of the bonding head 41 is also cleaned by the second nozzle 62 of the cleaning device 6. Hereinafter, additional steps will be described.

  Step SH: The control device 7 moves the bonding head 41 to the cleaning position (directly above the second nozzle 62), and moves the collet 42 of the bonding head 41 to the cleaning space 62c of the second nozzle 62.

  Step SI: As in step S5, the control device 7 ejects dry ice from the air blowing port 62a to remove foreign matter adhering to the surface of the suction surface of the collet 42. The removed foreign matter is sucked from the air suction port 62b and discharged to the dust collecting unit 67 through the discharge pipe 66b and the like.

  Step SJ: The control device 7 moves the collet 42 of the bonding head 41 to the delivery position of the die D.

  In the modified examples 1 and 2, the collet is washed. When a rubber collet is used, a Si rubber material that is cold resistant and flexible even at a low temperature of dry ice washing, particularly FVMQ (trade name: Fluoropower), etc. It is preferable to use it. In addition, it is preferable to use a cold-resistant metal or resin for the collet. In this case, it is preferable to provide a function for preventing the temperature from being lowered by incorporating a heater or irradiating the collet holding the die being cleaned or the collet itself with infrared rays so that condensation does not occur particularly in the collet. . In the following examples and modifications, it is preferable to apply the collet material and the dew condensation prevention function even when the collet is washed.

  FIG. 11 is a top view schematically illustrating the flip chip bonder according to the second embodiment. FIG. 12 is a diagram for explaining the operations of the pick-up flip head, transfer head, and bonding head when viewed from the direction of arrow A in FIG.

  The flip chip bonder 10A is roughly divided into a die supply unit 1, a pickup unit 2A, a transfer unit 8, an intermediate stage unit 3, a bonding unit 4A, a transport unit 5, a cleaning device 6A, and a substrate supply unit 9K. A substrate carry-out unit 9H and a control device 7 for monitoring and controlling the operation of each unit are provided.

  The pick-up unit 2A picks up and reverses the die D, a pick-up flip head 21A, a pick-up head Y drive unit 23A that moves the pick-up flip head 21A in the Y direction, and a collet 22 that lifts, rotates, inverts, and moves in the X direction Each drive unit (not shown). With such a configuration, the pick-up flip head 21A as the first head picks up the die, rotates the pick-up flip head 21A 180 degrees, inverts the bumps of the die D and faces the lower surface, and directs the die D to the second head. To the transfer head 81.

  The transfer unit 8 receives the inverted die D from the pickup flip head 21 </ b> A and places it on the intermediate stage 31. Similarly to the pick-up flip head 21A, the transfer unit 8 includes a transfer head 81 including a collet 82 that sucks and holds the die D at the tip, and a Y drive unit 83 that moves the transfer head 81 in the Y direction.

  The intermediate stage unit 3 includes an intermediate stage 31 on which the die D is temporarily placed. The intermediate stage 31 can be moved in the Y direction by a drive unit (not shown). As a countermeasure against condensation, it is preferable to incorporate heating means such as a heater in the intermediate stage 31. It is preferable to apply the same dew condensation countermeasure to the intermediate stages of the following embodiments and modifications.

The bonding unit 4A picks up the die D from the intermediate stage 31 and bonds the die D on the transported substrate P or laminates the die D on the die already bonded on the substrate P. The bonding unit 4A includes a bonding head 41 having a collet 42 (see also FIG. 12) for attracting and holding the die D at the tip, as with the pickup flip head 21A, and a Y driving unit 43 for moving the bonding head 41 in the Y direction. And a substrate recognition camera 44 that images a position recognition mark (not shown) of the substrate P and recognizes a bonding position.
With such a configuration, the bonding head 41, which is the third head, corrects the pickup position and orientation based on the imaging data of the undervision camera 45, picks up the die D from the intermediate stage 31, and images the substrate recognition camera 44. The die D is bonded to the substrate P based on the data.

  The cleaning device 6A includes a third nozzle 61A that cleans the back surface of the die D from above and a second nozzle 62 that cleans the surface (surface with bumps) of the die D from below. The third nozzle 61 </ b> A can be cleaned from above the upper surface of the intermediate stage 31 in addition to the back surface of the die D placed on the intermediate stage 31. The second nozzle 62 can be cleaned from below the suction surface of the collet 42 in addition to the surface of the die D held by the collet 42 of the bonding head 41.

  Next, a cleaning apparatus according to Example 2 will be described with reference to FIG. FIG. 13 is a block diagram of the cleaning apparatus.

  The cleaning device 6A includes a third nozzle 61A instead of the first nozzle 61 of the cleaning device 6 of the first embodiment. The cleaning device 6A includes a second nozzle 62, a third nozzle 61A, a carbon dioxide supply source 63 that supplies liquid carbon dioxide, an air supply source 64 that supplies compressed air (pressurized gas), and a liquid. Supply pipes 65b to 65d and 65g for supplying powdery dry ice produced by mixing carbon dioxide and compressed air to the second nozzle 62 and the third nozzle 61A. The cleaning device 6A further includes discharge pipes 66b to 66d that convey foreign matters removed from the die D and the like by the second nozzle 62 and the third nozzle 61A, a dust collection unit 67 that collects foreign matters, and between the supply pipes and the discharge pipes. Valves 68b to 68d and 68f to 68h provided between the pipes and an ionizer 69 are provided.

  The third nozzle 61A has the same configuration as that of the first nozzle 61 of the first embodiment, and performs cleaning by the same operation.

  Next, a bonding method (semiconductor device manufacturing method) performed in the flip chip bonder according to the second embodiment will be described with reference to FIGS. FIG. 14 is a cross-sectional view of the third nozzle during die cleaning. FIG. 15 is a cross-sectional view of the third nozzle after completion of die cleaning. FIG. 16 is a cross-sectional view of the third nozzle during intermediate stage cleaning. 17 and 18 are flowcharts showing a bonding method performed by the flip chip bonder according to the second embodiment. 17 are connected to the terminals A and B of FIG. 9 or 10 of the first embodiment. Terminals C and D in FIG. 17 are connected to terminals C and D in FIG.

  Step S11: The control device 7 picks up the die D by the pick-up flip head 21A as in step S1.

  Step S12: The control device 7 moves the pickup flip head 21A as in step S2.

  Step S13: As in step S3, the control device 7 rotates the pickup flip head 21A by 180 degrees, inverts the bump (front surface) of the die D, and turns it to the lower surface so that the die D is transferred to the transfer head 81. .

  Step S14: Similarly to step S7, the control device 7 picks up the die D from the collet 22 of the pickup flip head 21A by the collet 82 of the transfer head 81, and the die D is delivered.

  Step S15: The control device 7 reverses the pickup flip head 21A and turns the suction surface of the collet 22 downward.

  Step S16: Before or in parallel with step S15, the control device 7 moves the transfer head 81 to the intermediate stage 31.

  Step S <b> 17: The control device 7 places the die D held by the transfer head 81 on the intermediate stage 31.

  Step S18: The control device moves the transfer head 81 to the delivery position of the die D.

  Step S19: After or in parallel with step S18, the control device 7 moves the intermediate stage 31 below the third nozzle 61A.

  Step S1A: The control device 7 moves (lowers) the cleaning space 61c of the third nozzle 61A onto the die D placed on the intermediate stage 31.

  Step S1B: As in step S5, the control device 7 sprays powdered dry ice from the air outlet 61a to remove and clean the foreign matter adhering to the back surface of the die D, and the removed foreign matter is air. It is sucked from the suction port 61b and discharged to the dust collecting unit 67 (FIG. 14).

  Step S1C: As shown in FIG. 15, the control device 7 moves (raises) the third nozzle 61A from the intermediate stage 31.

  Step S1D: After or in parallel with step S1C, the control device 7 moves the intermediate stage 31 to the delivery position with the bonding head 41.

  Step S1E: The control device 7 picks up the die D from the intermediate stage 31 by the collet of the bonding head 41, and the die D is delivered.

  Step S1F: The control device 7 moves the intermediate stage 31 below the third nozzle 61A.

  Step S1G: After or in parallel with step S1G, the control device 7 moves (lowers) the cleaning space 61c of the third nozzle 61A onto the intermediate stage 31.

  Step S1H: As in step S1B, the control device 7 sprays dry ice from the air blowing port 61a to remove and clean the foreign matter adhering to the surface of the intermediate stage 31, and the removed foreign matter is removed from the air suction port 61b. And is discharged to the dust collecting unit 67 (FIG. 16).

  Step S1I: The control device 7 moves (raises) the third nozzle 61A from the intermediate stage 31.

  Step S1J: The control device 7 moves the intermediate stage 31 to a delivery position with the transfer head 81.

  The bonding after step S1E, the cleaning of the surface of the die D by the second nozzle 62, and the cleaning of the collet 42 are the same as in the first modification (FIG. 9) and the second modification (FIG. 10). The operation before step S11 is the same as the operation before step S1 of the first embodiment. The operation for taking out and carrying out the substrate P after bonding is the same as that in the first embodiment.

  The flip chip bonder according to the second embodiment is provided with a cleaning device on the intermediate stage, and performs cleaning of both the back surface of the die and the intermediate stage. Accordingly, it is possible to clean the back surface of the die to be laminated and prevent voids due to foreign matters on the laminated die and prevent foreign matters from accumulating on the intermediate stage.

  The nozzle of the cleaning apparatus according to the second embodiment blows out and sucks powdered dry ice. The nozzle dry ice blowing and washing area is an area that is larger than the maximum size of the mounted die. The cleaning device has a function of ascending and retracting to a position where it does not interfere with the bonding head operation. Moreover, it is good also as a structure which provides the washing | cleaning stage which mounts die | dye separately from an intermediate | middle stage, and can move the nozzle of a washing | cleaning apparatus to the position of a washing | cleaning stage and an intermediate | middle stage. According to the second embodiment, both the back surface of the die and the intermediate stage can be cleaned by the cleaning device having one mechanism.

  In addition to the intermediate stage 31, the position of the third nozzle 61A may be movable, and the intermediate stage 31 may be provided with a plurality of units according to the required throughput.

  FIG. 19 is a top view schematically illustrating the flip chip bonder according to the third embodiment. FIG. 20 is a diagram for explaining the operations of the pick-up flip head, transfer head, and bonding head when viewed from the direction of arrow A in FIG.

  The flip chip bonder 10B is roughly divided into a die supply unit 1, a pickup unit 2A, a transfer unit 8, an intermediate stage unit 3B having a cleaning device 6B, a bonding unit 4A, a transport unit 5, and a substrate supply unit 9K. A substrate carry-out unit 9H and a control device 7 for monitoring and controlling the operation of each unit are provided.

  The intermediate stage unit 3B includes an intermediate stage 31B for temporarily placing the die D and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31B. The intermediate stage 31B includes a fifth nozzle 62B of the cleaning device 6B and a shutter (stage) SS on which the die D is placed.

  The cleaning device 6B opens and closes the shutter SS of the intermediate stage 31B to thereby move the surface of the die D held by the collet 82 of the transfer head 81, the lower surface (suction surface) of the collet 82, and the lower surface of the collet 42 of the bonding head 41. (Adsorption surface) is washed from below.

  Next, a cleaning apparatus according to Example 3 will be described with reference to FIG. FIG. 21 is a block diagram of the cleaning apparatus.

  The cleaning device 6B includes a fifth nozzle 62B, a carbon dioxide supply source 63 that supplies liquid carbon dioxide, an air supply source 64 that supplies compressed air (pressurized gas), liquid carbon dioxide and compressed air. And supply pipes 65b, 65c, 65d for supplying powdered dry ice produced by mixing to the fifth nozzle 62B. The cleaning device 6B further includes discharge pipes 66b and 66c for transporting foreign matter removed from the die by the fifth nozzle 62B, a dust collecting unit 67 for collecting foreign matter, and a valve 68b provided between the supply pipe and the discharge pipe. 68c, 68d, 68f, and an ionizer 69.

  The fifth nozzle 62B has the same configuration as that of the second nozzle 62 of the first embodiment, and performs cleaning by the same operation.

  Next, a bonding method (semiconductor device manufacturing method) performed in the flip chip bonder according to the third embodiment will be described with reference to FIGS. FIG. 22 is a cross-sectional view of the fourth nozzle during die cleaning. FIG. 23 is a cross-sectional view of the fifth nozzle after completion of die cleaning. FIG. 24 is a cross-sectional view of the transfer head of the fifth nozzle during collet cleaning. FIG. 25 is a cross-sectional view of the fifth nozzle bonding head during collet cleaning. 26 to 29 are flowcharts illustrating a bonding method performed by the flip chip bonder according to the third embodiment. Terminals E and F in the flowchart of FIG. 26 are connected to terminals E and F of FIG. The terminals G to L in FIG. 27 are connected to the terminals G to L in FIG.

  Step S21: The control device 7 picks up the die D by the pick-up flip head 21A as in step S1.

  Step S22: The control device 7 moves the pickup flip head 21A as in step S12.

  Step S23: Similarly to step S13, the control device 7 rotates the pickup flip head 21A by 180 degrees, inverts the bump (front surface) of the die D, turns it to the lower surface, and takes the posture of passing the die D to the transfer head 81. .

  Step S24: Similarly to step S14, the control device 7 picks up the die D from the collet 22 of the pickup flip head 21A by the collet 82 of the transfer head 81, and transfers the die D.

  Step S25: The control device 7 reverses the pickup flip head 21A and turns the suction surface of the collet 22 downward.

  Step S26: Before or in parallel with step S25, the control device 7 moves the transfer head 81 above the intermediate stage 31B.

  Step S27: The control device 7 closes the shutter SS of the fifth nozzle 62B of the cleaning device 6B.

  Step S28: After or in parallel with step S27, the control device 7 lowers the transfer head 81.

  Step S29: The control device 7 places the die D held by the transfer head 81 on the intermediate stage 31B.

  Step S2A: The control device 7 raises the transfer head 81 to raise the collet 82 from the die D (FIG. 22).

  Step S2I: The controller 7 lowers the bonding head 41 and picks up the die D on the intermediate stage 31B. At this time, the transfer head 81 is moved and retracted.

  Step S2J: The control device 7 raises the bonding head 41.

  Step S2B: After or in parallel with step S2A and after or in parallel with step S2J, the control device 7 opens the shutter SS of the fifth nozzle 62B of the cleaning device 6B.

  Step S2K: The control device 7 lowers the bonding head 41 and puts the die D held by the collet 42 into the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B.

  Step S2C: As in step S6, the control device 7 sprays powdered dry ice from the air blowing port 62a to remove and clean the foreign matter adhering to the back surface of the die D, and the removed foreign matter is air. It is sucked from the suction port 62b and discharged to the dust collecting unit 67 (FIG. 23).

  Step S2L: The control device 7 raises the bonding head 41 and moves (rises) the die D from the fifth nozzle 62B.

  Step S2M: The control device 7 moves the bonding head 41 onto the bonding stage.

  Step S2N: The control device 7 mounts the die D picked up from the intermediate stage 31B by the collet 42 of the bonding head 41 on the substrate P on the die bonding stage.

  Step S2D: The control device 7 lowers the transfer head 81 and puts the collet 82 into the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B.

  Step S2E: Similarly to step S6, the control device 7 sprays powdered dry ice from the air blowing port 62a, removes foreign matter adhering to the lower surface (suction surface) of the collet 82, and cleans and removes it. The foreign matter is sucked from the air suction port 62b and discharged to the dust collecting unit 67 (FIG. 24).

  Step S2F: The control device 7 raises the transfer head 81.

  Step S2G: The control device 7 moves the transfer head 81 to the transfer head delivery position.

  Step S2O: The control device 7 moves the bonding head 41 onto the fifth nozzle 62B of the cleaning device 6B.

  Step S2P: The control device 7 lowers the collet 42 of the bonding head 41 and puts it into the cleaning space 62c of the fifth nozzle 62B.

  Step S2H: As in step S6, the control device 7 sprays powdered dry ice from the air blowing port 62a, removes foreign matter adhering to the lower surface (suction surface) of the collet 42, and cleans and removes it. The foreign matter is sucked from the air suction port 62b and discharged to the dust collecting unit 67 (FIG. 25).

  Step S2Q: The control device 7 raises and moves the bonding head 41.

  The operation before step S21 is the same as the operation before step S1 of the first embodiment. The operation of taking out and carrying out the substrate P after step S2N is the same as that in the first embodiment.

  The flip chip bonder according to the third embodiment is provided with a cleaning device function in the intermediate stage. The intermediate stage is provided with a nozzle that blows and sucks powdered dry ice, and a shutter on which a die can be placed. Close the shutter and place the die on the shutter. Thereafter, the die is received by the bonding head, the shutter of the intermediate stage is opened, and the back surface of the die picked up and held in the collet of the bonding head is cleaned by the dry ice cleaning function. When the bonding head is moving, the transfer head collet suction surface is cleaned with the dry ice cleaning function. Thereafter, the suction surface of the collet of the bonding head after the bonding can be cleaned.

  According to the third embodiment, it is possible to clean the die surface, the collet suction surface of the transfer head, and the collet suction surface of the bond head with one dry ice cleaning function. Thereby, accumulation of foreign matter can be prevented, and further, the risk of foreign matter adhesion on the wafer surface can be reduced.

<Modification 3>
Next, a bonding method (semiconductor device manufacturing method) performed in a flip chip bonder according to a modification of the third embodiment (modification 3) will be described with reference to FIGS. 29 and 30 are flowcharts showing a bonding method according to the third modification implemented by the flip chip bonder of FIG.

  The bonding method according to the third modification is the same as steps S21 to S25 of the bonding method according to the third embodiment, but other steps are different. Terminals E and F in the flowchart of FIG. 29 are connected to terminals E and F of FIG. Terminals M to O in FIG. 29 are connected to terminals M to O in FIG. A step after step S24 of the bonding method according to the modified example 3 will be described below.

  Step S36: The control device 7 moves the transfer head 81 above the intermediate stage 31B.

  Step S37: The control device 7 lowers the transfer head 81 and puts the die D held by the collet 82 into the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B.

  Step S38: As in step S6, the control device 7 sprays powdered dry ice from the air blowing port 62a to remove and clean the foreign matter adhering to the back surface of the die D, and the removed foreign matter is air. It is sucked from the suction port 62b and discharged to the dust collecting unit 67 (FIG. 23).

  Step S39: The control device 7 raises the transfer head 81 and moves (rises) the die D from the fifth nozzle 62B.

  Step S3A: After step S39, the control device 7 closes the shutter SS of the fifth nozzle 62B of the cleaning device 6B.

  Step S3B: After or in parallel with step S3A, the control device 7 lowers the transfer head 81.

  Step S3C: The control device 7 places the die D held by the transfer head 81 on the intermediate stage 31B.

  Step S3D: The control device 7 raises the transfer head 81 to raise the collet 22 from the die D (FIG. 22), and moves and retracts the transfer head 81 from above the intermediate stage 31B.

  Step S3K: After step 3D, the control device 7 lowers the bonding head 41 and picks up the die D on the intermediate stage 31B. At this time, the transfer head 81 is moved and retracted.

  Step S3L: The control device 7 raises the bonding head 41.

  Step S3E: After step 3K, the control device 7 opens the shutter SS of the fifth nozzle 62B of the cleaning device 6B.

  Step S3M: The control device 7 moves the bonding head 41 onto the bonding stage.

  Step S3N: The control device 7 mounts the die D picked up from the intermediate stage 31B by the collet 42 of the bonding head 41 on the substrate P on the die bonding stage.

  Step S3F: The control device 7 lowers the transfer head 81 and puts the collet 82 into the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B.

  Step S3G: As in step S6, the control device 7 sprays powdered dry ice from the air blowing port 62a, removes foreign matter adhering to the lower surface (suction surface) of the collet 82, and cleans and removes it. The foreign matter is sucked from the air suction port 62b and discharged to the dust collecting unit 67 (FIG. 24).

  Step S3H: The control device 7 raises the transfer head 81.

  Step S3J: The control device 7 moves the transfer head 81 to the transfer head delivery position.

  Step S3O: The control device 7 moves the bonding head 41 onto the fifth nozzle 62B of the cleaning device 6B.

  Step S3P: The control device 7 lowers the collet 42 of the bonding head 41 and puts it into the cleaning space 62c of the fifth nozzle 62B.

  Step S3I: As in step S6, the control device 7 sprays powdered dry ice from the air blowing port 62a, removes foreign matter adhering to the lower surface (suction surface) of the collet 42, and cleans and removes it. The foreign matter is sucked from the air suction port 62b and discharged to the dust collecting unit 67 (FIG. 25).

  Step S3Q: The control device 7 raises the bonding head 41 to move and retract.

  The operation before step S21 is the same as the operation before step S1 of the first embodiment. The operation of taking out and carrying out the substrate P after step S3N is the same as that in the first embodiment.

  The flip chip bonder according to the modified example 3 is provided with a cleaning device function in the intermediate stage. The intermediate stage is provided with a nozzle that blows and sucks powdered dry ice, and a shutter on which a die can be placed. After the shutter of the intermediate stage is opened and the surface of the die picked up and held on the collet of the transfer head is cleaned by the dry ice cleaning function, the shutter is closed and the die is placed on the shutter. Thereafter, the die is received by the bonding head, and when moving, the shutter is opened again, and the suction surface of the transfer head collet is cleaned by the dry ice cleaning function. Thereafter, the suction surface of the collet of the bonding head after the bonding can be cleaned.

  FIG. 31 is a top view schematically illustrating a flip chip bonder according to the fourth embodiment. FIG. 32 is a diagram for explaining the operations of the pickup flip head, transfer head, and bonding head when viewed from the direction of arrow A in FIG.

  The flip chip bonder 10C is roughly divided into a die supply unit 1, a pickup unit 2C, an intermediate stage unit 3C, a bonding unit 4A, a transport unit 5, a cleaning device 6C, a substrate supply unit 9K, and a substrate carry-out unit 9H. And a control device 7 for monitoring and controlling the operation of each unit.

  In addition to the configuration of the pickup unit 2A, the pickup unit 2C includes a stage recognition camera 24 for recognizing the back surface of the die D and the upper surface (suction surface) of the collet 22.

  The intermediate stage unit 3C recognizes the intermediate stage 31 on which the die D is temporarily placed, the stage recognition camera 32 that recognizes the intermediate stage 31, the lower surface of the die D, and the lower surface (suction surface) of the collet 22. And an undervision camera 33.

  The cleaning device 6C cleans the back surface of the die D placed on the intermediate stage 31 and the front surface of the intermediate stage 31 from above, and the back surface of the die D held on the collet 22 of the pickup flip head 21A and the bottom surface of the collet 22 It is possible to clean the (adsorption surface) from above. The cleaning device 6C cleans the surface of the die D held by the collet 82 of the transfer head 81 and the lower surface (suction surface) of the collet 82 from below, and the surface of the die D held by the collet 42 of the bonding head 41 and It is possible to clean the lower surface (suction surface) of the collet 42 from below.

  Next, a cleaning apparatus according to Embodiment 4 will be described with reference to FIG. FIG. 33 is a block diagram of the cleaning apparatus.

  The cleaning device 6C includes a first nozzle 61, a second nozzle 62, a third nozzle 61A, a fourth nozzle 62C, a carbon dioxide supply source 63 for supplying liquid carbon dioxide, and compressed air (pressurization). The first nozzle 61, the second nozzle 62, the third nozzle 61A, and the fourth nozzle are powdered dry ice produced by mixing an air supply source 61 for supplying gas) and liquid carbon dioxide and compressed air. Supply piping 65a-65d, 65g, and 65h supplied to 62C are provided. The cleaning device 6C further includes discharge pipes 66a to 66e that convey foreign substances removed from the die by the first nozzle 61, the second nozzle 62, the third nozzle 61A, and the fourth nozzle 62C, and a dust collection unit that collects the foreign substances. 67, valves 68a to 68j provided between the supply pipes and the discharge pipes, and an ionizer 69.

  The fourth nozzle 62C has the same configuration as that of the second nozzle 62, and performs cleaning by the same operation.

  Next, a bonding method (semiconductor device manufacturing method) performed in the flip chip bonder according to the fourth embodiment will be described with reference to FIGS. FIG. 34 is a cross-sectional view of the fourth nozzle during die cleaning. FIG. 35 is a cross-sectional view of the transfer head of the fourth nozzle during collet cleaning. 36 to 38 are flowcharts illustrating a bonding method performed by the flip chip bonder according to the fourth embodiment. Terminals E and F in the flowchart of FIG. 36 are connected to terminals E and F of FIG. Terminals A and B in FIG. 37 are connected to terminals A and B in FIG.

  Step S51: The control device 7 picks up the die D by the pick-up flip head 21A as in step S1.

  Step S52: The control device 7 moves the pickup flip head 21A as in step S2.

  Step S53: As in step S3, the control device 7 rotates the pickup flip head 21A by 180 degrees, inverts the bump (front surface) of the die D, and turns it to the lower surface, and takes the posture of passing the die D to the transfer head 81. .

  Step S54: After or in parallel with step S53, the control device 7 moves the cleaning space 61c of the first nozzle 61 onto the die D held by the collet 22 of the pickup flip head 21A and lowers it.

  Step S55: As with step S5, the control device 7 ejects dry ice from the air blowing port 61a to remove foreign matter adhering to the back surface of the die D. The removed foreign matter is sucked from the air suction port 61b and discharged to the dust collecting unit 67 through the discharge pipe 66a and the like.

  Step S56: The control device 7 raises the cleaning space 61c of the first nozzle 61 and moves it from above the die D held by the collet 22 of the pickup head 21.

  Step S57: The control device 7 picks up the die D from the collet 22 of the pick-up flip head 21A by the collet 82 of the transfer head 81 and transfers the die D in the same manner as in step S7.

  Step S58: After step S57, the control device 7 moves the cleaning space 61c of the first nozzle 61 onto the collet 22 of the pickup flip head 21A and lowers it.

  Step S59: As in step S5, the control device 7 ejects dry ice from the air outlet 61a to remove foreign matter adhering to the surface of the suction surface of the collet 22. The removed foreign matter is sucked from the air suction port 61b and discharged to the dust collecting unit 67 through the discharge pipe 66a and the like.

  Step S5A: The control device 7 raises the cleaning space 61c of the first nozzle 61 and moves it from above the collet 22 of the pickup flip head 21A.

  Step S5B: The control device 7 reverses the pick-up flip head 21A and faces the suction surface of the collet 22 downward.

  Step S <b> 42: After step 57, the control device 7 moves the transfer head 81 to the intermediate stage 31.

  Step S43: The control device 7 places the die D held by the transfer head 81 on the intermediate stage 31.

  Step S44: After step 4C, the control device 7 moves (lowers) the cleaning space 61c of the third nozzle 61A onto the die D placed on the intermediate stage 31.

  Step S45: Similarly to step S3, the control device 7 sprays powdered dry ice from the air outlet 61a to remove and clean the foreign matter adhering to the surface of the die D, and the removed foreign matter is air. It is sucked from the suction port 61b and discharged to the dust collecting unit 67 (FIG. 14).

  Step S46: The control device 7 moves (lifts) the third nozzle 61A from the intermediate stage 31, as shown in FIG.

  Step S47: The control device 7 picks up the die D from the intermediate stage 31 by the collet of the bonding head 41.

  Step S48: The control device 7 determines whether or not the intermediate stage 31 needs to be cleaned by the stage recognition camera 32. If yes, then continue with step S49, otherwise return to step 43.

  Step S49: The control device 7 moves (lowers) the cleaning space 61c of the third nozzle 61A onto the intermediate stage 31.

  Step S4A: As in step S15, the control device 7 sprays dry ice from the air blowing port 61a to remove and clean the foreign matter adhering to the surface of the intermediate stage 31, and the removed foreign matter is removed from the air suction port 61b. And discharged to the dust collecting unit 67 (FIG. 14).

  Step S4B: The control device 7 moves (raises) the third nozzle 61A from the intermediate stage 31.

  Step S4C: The control device 7 moves the transfer head 81 above the undervision camera 33 and images the lower surface (suction surface) of the collet 82.

  Step S4D: The control device 7 determines whether or not cleaning is required from the captured image of the lower surface (suction surface) of the collet 22. If yes, then continue with step S4E, otherwise return to step S41.

  Step S4E: The control device 7 moves the transfer head 81 above the cleaning device and lowers it to place the collet 82 into the cleaning space 62c of the fourth nozzle 62C.

  Step S4F: As in step S6, the control device 7 sprays powdered dry ice from the air outlet 62a to remove and clean the foreign matter adhering to the suction surface of the collet 82, and the removed foreign matter is It is sucked from the air suction port 62b and discharged to the dust collecting unit 67 (FIG. 34).

  Step S4G: The control device 7 moves the bonding head 41 above the undervision camera 45 and images the lower surface (front surface) of the die D held by the collet 42 of the bonding head 41.

  Step S4H: The control device 7 determines whether or not cleaning is necessary from the captured image of the lower surface (front surface) of the die D held by the collet 42 of the bonding head 41. If YES, the process moves to step S4I. If NO, the process moves to step S4K.

  Step S <b> 4 </ b> I: The control device 7 moves the bonding head 41 above the cleaning device and lowers it to place the die D into the cleaning space 62 c of the second nozzle 62.

  Step S4J: As in step S6, the control device 7 sprays powdered dry ice from the air blowing port 62a to remove and clean the foreign matter adhering to the surface of the die D, and the removed foreign matter is air. It is sucked from the suction port 62 b and discharged to the dust collecting unit 67.

  Step S4K: The control device 7 raises the bonding head 41 to move (lift) the die D from the second nozzle 62, and moves the bonding head 41 to the bonding stage.

Step S4L: The control device 7 lowers the bonding head 41 and mounts the die D held by the bonding head 41 on the substrate P. Step S4M: The control device 7 moves the bonding head 41 above the undervision camera 45. The lower surface (suction surface) of the collet 42 is imaged.

  Step S4N: The control device 7 determines whether or not cleaning is necessary from the captured image of the lower surface (suction surface) of the collet 42 of the bonding head 41. If YES, the process moves to step S40, and if NO, the process moves to step S47.

  Step S <b> 4 </ b> O: The control device 7 moves the bonding head 41 to above the cleaning device and lowers it to place the collet 42 into the cleaning space of the second nozzle 62.

  Step S4P: As in step S6, the control device 7 sprays powdered dry ice from the air blowing port 62a, removes the foreign matter adhering to the lower surface (suction surface) of the collet 42, and cleans and removes it. The foreign matter is sucked from the air suction port 62 b and discharged to the dust collecting unit 67.

  The operation before step S51 is the same as the operation before step S1 of the first embodiment. The operation of taking out and carrying out the substrate P after step S4L is the same as that in the first embodiment.

  According to the fourth embodiment, both the front and back surface foreign matter generated during picking up the die from the wafer, the foreign matter accumulated on the intermediate stage, the pick-up head adhering to the collet during die transportation, and the bonding head are cleaned. Thus, the foreign matter on the front surface and back surface of the die to be laminated can be significantly reduced.

<Modification 4>
Next, a bonding method (semiconductor device manufacturing method) performed in a flip chip bonder according to a modification of the fourth embodiment (modification 4) will be described with reference to FIGS. 39 to 41 are flowcharts showing a bonding method according to the fourth modification implemented by the flip chip bonder of FIG.

  The bonding method according to the modification 4 is the same as steps S51 to S54 of the bonding method according to the fourth embodiment, but other steps are different. 39 are connected to terminals E and F in FIG. 36, terminals G and H in FIG. 39 are connected to G and H in FIG. 40, and terminals C and D in FIG. Connected to C and D.

  A step after step S57 of the bonding method according to the modified example 4 will be described below.

  Step S61: The control device 7 moves the transfer head 81 above the fourth nozzle 62C of the cleaning device 6C.

  Step S62: The control device 7 lowers the transfer head 81 and puts the die D held by the collet 82 into the cleaning space 62c of the fourth nozzle 62C of the cleaning device 6C.

  Step S63: As in step S6, the control device 7 sprays powdered dry ice from the air blowing port 62a to remove and clean the foreign matter adhering to the surface of the die D, and the removed foreign matter is air. It is sucked from the suction port 62b and discharged to the dust collecting unit 67 (FIG. 33).

  Step S64: The control device 7 raises the transfer head 81 and moves (rises) the die D from the fourth nozzle 62C.

  Step S65: The control device 7 moves the transfer head 81 above the intermediate stage 31.

  Step S66: The control device 7 lowers the transfer head 81.

  Step S <b> 67: The control device 7 places the die D held by the transfer head 81 on the intermediate stage 31.

  Step S68: The control device 7 raises the transfer head 81 to raise the collet 22 from the die D.

  Step S69: The control device 7 moves the transfer head 81 above the fourth nozzle 62C of the cleaning device 6C.

  Step S6A: The control device 7 lowers the transfer head 81 and puts the collet 82 into the cleaning space 62c of the fourth nozzle 62C of the cleaning device 6C.

  Step S6B: As with step S6, the control device 7 sprays powdered dry ice from the air outlet 62a to remove and clean the foreign matter adhering to the suction surface of the collet, and the removed foreign matter is air. It is sucked from the suction port 62b and discharged to the dust collecting unit 67 (FIG. 33).

  Step S6C: The control device 7 raises the transfer head 81 to move (rise) the die D from the fourth nozzle 62C.

  Step S6D: The control device 7 moves the transfer head 81 to the delivery position of the die D.

  After step S68, step S44 and subsequent steps in FIG. 40 are performed. Steps S44 to S4B of the fourth modification are the same as steps S44 to S4B of the fourth embodiment. Also, after step 47 in FIG. 40, step S4K and subsequent steps in FIG. 41 are performed. Steps S4K to S4P of Modification 4 are the same as Steps S4K to S4P of Embodiment 4.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments, examples and modifications. However, the present invention is not limited to the above examples and modifications, and various modifications can be made. Needless to say.

  For example, in the embodiment and the modification, it has been described that the cleaning apparatus mixes liquid carbon dioxide and compressed air to generate powdered dry ice, but the present invention is not limited to this, and the pelletizer is liquid. Pelletized dry ice is formed from carbon dioxide, and pulverized dry ice (granulated dry ice) is formed from the pelletized dry ice with a pulverizer. You may make it supply a nozzle with carrier gas.

  Further, in the embodiment and the modified example, it has been described that the cleaning is performed by covering the entire die with the nozzle, but the present invention is not limited to this. Also good. Further, a plurality of thin nozzles may cover and clean the entire die. A thin nozzle may scan and clean the entire die.

  In the first, second, and fourth embodiments, it has been described that the cleaning device includes a plurality of nozzles. However, the present invention is not limited to this, and a plurality of cleaning devices including one nozzle may be provided. Good.

  Further, in the fourth embodiment and the fourth modification, it has been described that the cleaning is performed by determining whether the undervision camera needs to be cleaned before the cleaning, but the present invention is not limited to this, and the cleaning device is used before the bonding. The back surface of the die that has been cleaned may be confirmed with an undervision camera. If the number of foreign objects is greater than a predetermined number, cleaning may be performed again and then bonding may be performed. Alternatively, the back surface of the die may be confirmed with an undervision camera, and cleaning may be performed until there is no foreign matter. Further, the collet may be confirmed with an undervision camera, and cleaning may be performed until there is no foreign matter. As a result, die having foreign matter is not stacked and mounted, so that product defects can be reduced.

  In the fourth embodiment and the fourth modification, it is not determined whether or not the camera needs to be cleaned before cleaning the collet of the pickup flip head. However, the cleaning may be performed by determining whether or not the cleaning is necessary. .

  In the fourth embodiment and the fourth modification, the back surface of the die D held by the collet of the pickup flip head is not washed, but may be washed by the first nozzle. In this case, it may be cleaned by determining whether or not cleaning is necessary with a camera.

  In Example 4 and Modification 4, the back surface of the die is cleaned twice with the first nozzle and the third nozzle. However, either one may be cleaned, or after the cleaning with the first nozzle. Alternatively, it may be determined whether or not cleaning is necessary, and cleaning may be performed with a third nozzle if necessary.

  Further, unlike the fourth embodiment and the fourth modification, the first embodiment, the first modification, the second modification, the second embodiment, the third embodiment, and the third modification are imaged by a board recognition camera or an undervision camera. However, it is also possible to perform imaging in the same manner as in the fourth embodiment and the fourth modification, and determine whether or not cleaning is necessary based on imaging information.

  Also, in the examples and modifications, it was explained that measures against static electricity and blowing out dry ice through an ionizer are not limited to this, but the nozzle and intermediate stage are made of a conductive material (metal, carbon resin, etc.). And grounding may be performed. Both an ionizer and a grounding conductive material may be used.

  In the first embodiment and the first and second modifications, the flip chip bonder is described in which the die is picked up from the die supply unit by the pickup head and flipped (reversed), and the die is delivered to the bonding head and bonded to the substrate by the bonding head. , Not limited to this, pick up the die from the die supply unit with a pickup head, place it on the intermediate stage, invert the die placed on the intermediate stage on the intermediate stage, and deliver it to another intermediate stage, It may be picked up by a bonding head and bonded to the substrate.

  In addition, a bonding head for bonding a flipped die may be provided with a plurality of bonding heads to alternately perform chip cleaning, bonding, and collet cleaning when bonding time and cleaning time become long.

  In the embodiments and the modified examples, the flip chip bonder has been described. However, the present invention is not limited to this, and the present invention can be applied to a die sorter that picks up a die from a die supply unit, turns it over, and places it on a tray or the like.

1: Die supply unit 11: Wafer 2: Pickup unit 21: Pickup head 22: Collet 3: Intermediate stage unit 31: Intermediate stage 4: Bonding unit 41: Bonding head 42: Collet 6: Cleaning device 7: Control device 10: Flip Chip bonder D: Die P: Substrate

Claims (33)

Flip chip bonder
A die supply unit for holding a die having bumps;
A bonding stage for placing the die on a substrate or an already mounted die;
A first head having a collet that adsorbs the die;
A second head having a collet for adsorbing the die;
A cleaning device for cleaning the die located between the die supply unit and the bonding stage with dry ice;
With
The first head picks up the die from the die supply unit and flips it upside down,
The second head picks up the die from the first head. The flip chip bonder of claim 1,
The cleaning device has a first nozzle that blows out the dry ice,
The first nozzle cleans the back surface opposite to the surface having the bumps of the die picked up by the first head. The flip chip bonder according to claim 1 or 2,
The cleaning device has a second nozzle that blows out the dry ice,
The second nozzle cleans the surface of the die having the bumps picked up from the first head by the second head. The flip chip bonder of claim 2,
The first nozzle cleans the collet of the first head. The flip chip bonder of claim 3,
The second nozzle cleans the collet of the second head. The flip chip bonder of claim 1,
The second head is a bonding head that mounts the die on the substrate or the already mounted die. The flip chip bonder of claim 1, further comprising:
An intermediate stage on which the die is placed by the second head;
A third head having a collet that adsorbs the die;
With
The third head picks up the die from the intermediate stage and places it on the substrate or the already mounted die,
The cleaning device has a third nozzle for blowing out dry ice,
The third nozzle cleans the back surface opposite to the surface having the bumps of the die placed on the intermediate stage. The flip chip bonder of claim 7,
The cleaning device further includes a second nozzle that blows dry ice,
The second nozzle cleans the surface of the die having the bumps picked up from the intermediate stage by the third head. The flip chip bonder according to claim 7 or 8,
The third nozzle cleans the upper surface of the intermediate stage. The flip chip bonder of claim 8,
The second nozzle cleans the collet of the third head. The flip chip bonder of claim 7,
The intermediate stage is movable between a position where the die is transferred from the second head, a position of the third nozzle, and a position where the die is transferred with the third head. The flip chip bonder of claim 7,
A plurality of the intermediate stages, each of which passes the die from the first head in a path that does not interfere during movement, the position of the third nozzle, the position of the third head and the die passing, Is movable. The flip chip bonder of claim 9, further comprising:
A stage recognition camera that images the back surface of the die placed on the intermediate stage and the intermediate stage;
The third nozzle cleans the back surface of the die and the intermediate stage placed on the intermediate stage based on imaging information of the stage recognition camera. The flip chip bonder of claim 10, further comprising:
A first undervision camera that images the surface of the die held by the third head and the collet of the third head;
The second nozzle cleans the surface of the die and the collet of the third head held by the third head based on imaging information of the first undervision camera. The flip chip bonder of claim 8,
The cleaning device further includes a fourth nozzle that blows dry ice,
The fourth nozzle cleans the surface of the die where the second head picks up the die from the first head. The flip chip bonder of claim 8,
The fourth nozzle cleans the collet of the second head. The flip chip bonder of claim 16, further comprising:
A second undervision camera for imaging the collet of the second head;
The fourth nozzle cleans the collet of the second head based on imaging information of the second undervision camera. The flip chip bonder according to claim 14 or 17,
The cleaning device further includes a first nozzle and a second nozzle that blow dry ice,
The first nozzle cleans the back surface of the die picked up by the first head and the collet of the first head. The flip chip bonder of claim 18, further comprising:
A second stage recognition camera for imaging the collet of the first head and the back surface of the die held by the first head;
The first nozzle cleans the collet of the first head and the back surface of the die held by the first head based on the imaging information of the second stage recognition camera. The flip chip bonder of claim 1, further comprising:
An intermediate stage on which the die is placed by the second head;
A third head that picks up the die from the intermediate stage and places it on the substrate or an already mounted die;
With
The third head has a collet that adsorbs the die;
The cleaning device has a fifth nozzle that blows dry ice,
The intermediate stage includes a stage that can be opened and closed on the fifth nozzle,
When the stage is closed, the die is placed on the stage;
When the stage is open, the fifth nozzle is a surface having the bumps of the die held by the second head, the collet of the second head from which the die is removed, and the third head is The surface of the die picked up from the intermediate stage and the collet of the third head are washed. The manufacturing method of the semiconductor device is as follows:
(A) preparing a wafer ring for holding a die having bumps;
(B) preparing a substrate on which the die is mounted;
(C) picking up the die from the wafer ring and turning it upside down;
(D) after the step (c), washing the die with dry ice;
(E) after the step (c), the step of picking up the die;
(F) after the step (d), placing the die on the substrate or a die that has already been mounted;
Is provided. In the manufacturing method of the semiconductor device of Claim 21,
The step (c) picks up the die with a first head having a collet,
In the step (e), the die is picked up from the first head by a second head having a collet,
In the step (f), the die is placed on the substrate or the already mounted die by the second head. In the manufacturing method of the semiconductor device of Claim 22,
The step (d)
(D1) cleaning the back surface of the die picked up by the first head;
(D2) the second head cleaning the surface having the bumps of the die picked up from the first head;
Is provided. 24. The method of manufacturing a semiconductor device according to claim 23.
The step (d) further includes
(D3) A step of cleaning the collet of the first head is provided. In the manufacturing method of the semiconductor device of Claim 21,
The step (c) picks up the die with a first head having a collet,
In the step (e), the die is picked up from the first head by a second head having a collet and placed on an intermediate stage.
In the step (f), the die is picked up from the intermediate stage and placed by a third head having a collet. The method of manufacturing a semiconductor device according to claim 25,
The step (d)
(D1) cleaning a back surface opposite to the surface having the bumps of the die placed on the intermediate stage;
(D2) cleaning the die placement surface of the intermediate stage;
Is provided. The method of manufacturing a semiconductor device according to claim 25,
The intermediate stage includes a stage that can be opened and closed,
The step (d)
(D1) cleaning the back surface opposite to the surface having the bumps of the die held by the second head with the stage opened;
(D2) placing the die on the stage with the stage closed;
(D3) cleaning the suction surface of the collet of the second head with the stage opened;
(D4) cleaning the suction surface of the collet of the third head with the stage opened;
Is provided. 27. The method of manufacturing a semiconductor device according to claim 26.
The step (d) further includes
(D3) cleaning the surface having the bumps of the die held by the collet of the third head;
(D4) cleaning the collet suction surface of the third head;
Is provided. The method of manufacturing a semiconductor device according to claim 28.
The step (d) further includes
(D5) cleaning the surface of the die held by the collet of the second head;
(D6) cleaning the suction surface of the collet of the second head;
Is provided. 30. The method of manufacturing a semiconductor device according to claim 29.
The step (d) further includes
(D7) cleaning the back surface of the die held by the collet of the first head;
(D8) cleaning the collet suction surface of the first head;
Is provided. 28. The method of manufacturing a semiconductor device according to claim 27.
The step (d) further includes
(D9) imaging the placement surface side of the intermediate stage;
(D10) imaging the lower surface side of the collet of the third head;
With
In the step (d2), the intermediate stage is washed based on the imaging information in the step (d9),
In the step (d3), based on the imaging information in the step (d10), the surface of the die held by the collet of the third head is cleaned.
In the step (d4), the suction surface of the collet of the third head is cleaned based on the imaging information in the step (d10). 30. The method of manufacturing a semiconductor device according to claim 29.
The step (d) further includes
(D11) imaging the surface of the die held by the collet of the second head;
(D12) imaging the suction surface of the collet of the second head;
With
In the step (d5), based on the imaging information in the step (d11), the surface of the die held by the collet of the second head is cleaned.
In the step (d6), the collet of the second head is washed based on the imaging information in the step (d12). The method for manufacturing a semiconductor device according to claim 30, wherein
The step (d) further includes
(D13) imaging the back surface of the die held by the collet of the first head;
(D14) imaging the collet suction surface of the first head;
With
The step (d7) cleans the surface of the die held by the collet of the first head based on the imaging information of the step (d13),
In the step (d8), the collet of the first head is washed based on the imaging information in the step (d14).

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