KR20170129008A - Semiconductor device package - Google Patents

Abstract

The present invention relates to a semiconductor device package having improved reliability. The semiconductor device package comprises: a semiconductor device; a wavelength conversion member located on an upper surface of the semiconductor device; a reflective member surrounding four side surfaces of the semiconductor device, wherein a height of the upper surface is higher than the upper surface of the semiconductor device and lower than the upper surface of the wavelength conversion member; and a diffusion member located to cover the upper surface of the reflective member and the wavelength conversion member.

Description

[0001] SEMICONDUCTOR DEVICE PACKAGE [0002]

Embodiments relate to a semiconductor device package, and more particularly to a semiconductor device package with improved reliability.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of Group 3-5 or 2-6 group semiconductors can be applied to various devices such as a red, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, Speed, safety, and environmental friendliness.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. It also has advantages of fast response speed, safety, environmental friendliness and easy control of device materials, so it can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diodes (LEDs), automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

In recent years, the brightness problem of light emitting diodes has been greatly improved, and the light emitting diodes have been applied to various devices such as a backlight unit of a liquid crystal display device, an electric sign board, a display device, and a home appliance.

The light emitting diode may have a structure in which the first electrode and the second electrode are disposed on one side of the light emitting structure including the first semiconductor layer, the active layer, and the second semiconductor layer. The semiconductor device package including the wavelength conversion film disposed on one side of the above-described light emitting structure can realize light of a desired wavelength band.

However, when the wavelength conversion film is peeled off from one side of the light emitting structure, the reliability of the semiconductor device package may deteriorate and the light extraction efficiency may also be lowered.

The embodiment is to provide a semiconductor device package with improved reliability.

A semiconductor device package of an embodiment includes a semiconductor device; A wavelength conversion element disposed on an upper surface of the semiconductor element; A reflective member surrounding four sides of the semiconductor element and having a height of an upper surface higher than a height of an upper surface of the semiconductor element and lower than a height of an upper surface of the wavelength conversion element; And a diffusing member disposed to cover the reflective member and the upper surface of the wavelength converting member.

The semiconductor device package according to the embodiment may be arranged so that the reflecting member surrounding four sides of the semiconductor element covers up to a part of the side surface of the wavelength converting member disposed on the upper surface of the semiconductor element. Then, the diffusion member is disposed so as to cover the upper surface of the wavelength conversion member and the reflection member so that the side surface of the wavelength conversion member can be completely surrounded by the reflection member and the diffusion member. Thus, it is possible to effectively prevent the wavelength conversion member from being peeled from the upper surface of the semiconductor element.

1A is a perspective view of a semiconductor device package of an embodiment.
1B is a cross-sectional view taken along line I-I 'of FIG. 1A.
2 is a cross-sectional view of the semiconductor device of FIG.
3 is a cross-sectional view of the semiconductor device package I-I 'of another embodiment.
4A to 4F are cross-sectional views showing a method for manufacturing a semiconductor device package of the embodiment.
5A to 5H are cross-sectional views showing a method of manufacturing a semiconductor device package according to another embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The semiconductor device may include various electronic devices such as a light emitting device and a light receiving device. The light emitting device and the light receiving device may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

The semiconductor device according to this embodiment may be a light emitting device.

The light emitting device emits light by recombination of electrons and holes, and the wavelength of the light is determined by the energy band gap inherent to the material. Thus, the light emitted may vary depending on the composition of the material.

Hereinafter, the semiconductor device package of the embodiment will be described as a light emitting device package.

1A is a perspective view of a semiconductor device package of an embodiment, and Fig. 1B is a cross-sectional view of I-I 'of Fig. 1A.

1A and 1B, a semiconductor device package 100 according to the embodiment includes a semiconductor element 10, a wavelength conversion member 20 that covers an upper surface 10a of the semiconductor element 10, A reflecting member 30 covering a part of the side surface of the side and wavelength converting member 20 and a reflecting member 30 covering the upper surface 30a of the reflecting member 30 and the upper surface 20a of the wavelength converting member 20, (40).

The semiconductor device package 100 may be a light emitting device package having a chip scale package (CSP) structure. For example, the semiconductor device 10 may include first and second electrode pads 15a and 15b ) May be disposed in the light emitting device. The structure of the semiconductor element 10 will be described later.

The wavelength converting member 20 may cover the upper surface 10a of the semiconductor element 10. [ The thickness of the wavelength converting member 20 may be 70 탆 to 100 탆, but is not limited thereto. The wavelength converting member 20 may be formed of a polymer resin in which the wavelength converting particles are dispersed. At this time, the polymer resin may be at least one selected from a light-transmitting epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin. As an example, the polymer resin may be a silicone resin.

The wavelength converting particles can absorb the light emitted from the semiconductor element 10 and convert it into white light. For example, the wavelength converting particles may include at least one of a phosphor and a quantum dot (QD). Hereinafter, the wavelength converting particle is described as a phosphor.

The phosphor may include any one of a YAG-based, TAG-based, silicate-based, sulfide-based or nitride-based fluorescent material, but the embodiment is not limited to the type of the fluorescent material. YAG and TAG-based fluorescent material (Y, Tb, Lu, Sc , La, Gd, Sm) 3 (Al, Ga, In, Si, Fe) 5 (O, S) 12: Ce may be selected from, Silicate The phosphor can be selected from (Sr, Ba, Ca, Mg) ₂ SiO ₄ : (Eu, F, Cl) The sulfide-based fluorescent material can be selected from (Ca, Sr) S: Eu, (Sr, Ca, Ba) (Al, Ga) ₂ S ₄ : Eu, (O, N) ₁₆ (Ca _x , M _y ) (Si, Al) ₁₂ (O, N): Eu (e.g., CaAlSiN ₄ : Eu? -SiAlON: Eu) or Ca-? SiAlON: Eu. In this case, M may be selected from among the phosphor components satisfying 0.05 <(x + y) <0.3, 0.02 <x <0.27 and 0.03 <y <0.3, at least one of Eu, Tb, Yb or Er. The red phosphor may be a nitride-based phosphor including N (e.g., CaAlSiN ₃ : Eu) or a KSF (K ₂ SiF ₆ ) phosphor.

The edge of the wavelength conversion member 20 may protrude from the edge of the semiconductor element 10. This is because the light emitted from the side surface of the semiconductor element 10 is converted into the light of a specific wavelength band through the protruded region of the wavelength conversion member 20 and emitted to the outside of the semiconductor device package 10. For example, when the semiconductor element 10 emits light in the blue wavelength range, light in the blue wavelength range can be converted into white light by the wavelength conversion member 20. [

The light emitted from the semiconductor element 10 is transmitted through the first light L1 passing through the wavelength conversion member 20 and the semiconductor element 10 in the region where the semiconductor element 10 is in close contact with the upper surface 10a of the semiconductor element 10, And the second light L2 passing through the wavelength conversion member 20 in the region protruding from the edge of the second light L2. Therefore, the color of the white light can be improved in the semiconductor device package 100 having the structure in which the edge of the wavelength conversion member 20 protrudes from the edge of the semiconductor element 10 as in the embodiment. Furthermore, when the wavelength conversion member 20 is disposed on the semiconductor element 10, a process margin can be secured.

The reflective member 30 is disposed to surround four sides of the semiconductor element 10 and can reflect light emitted from the side surface of the semiconductor element 10. Therefore, the light reflected by the reflective member 30 can be introduced into the semiconductor element 10 again and be emitted through the upper surface 10a of the semiconductor element 10. [

The height of the upper surface 30a of the reflective member 30 is higher than the height of the upper surface 10a of the semiconductor element 10 so that the reflective member 30 is positioned on the side of the semiconductor element 10, As shown in FIG. It is possible to prevent the wavelength conversion member 20 from being peeled off from the semiconductor element 10 when the reflecting member 30 is disposed so as to surround a part of the side surface of the wavelength conversion member 20 as described above.

In a general semiconductor device package, a wavelength conversion member is disposed on a semiconductor element, and a side surface of the wavelength conversion member is directly exposed. Therefore, the wavelength converting member is peeled off from the upper surface of the semiconductor element, so that the reliability of the semiconductor element package is lowered, and at the same time, the light extraction efficiency is also reduced.

In the semiconductor device package 100 of the above-described embodiment, the height of the upper surface 30a of the reflective member 30 is higher than the height of the upper surface 10a of the semiconductor element 10, Is lower than the height of the surface 20a and is wrapped up to a part of the side surface of the wavelength converting member 20 by the reflecting member 30. [

The difference W4 between the height of the upper surface 30a of the reflective member 30 and the height of the upper surface 10a of the semiconductor element 10 may be equal to or greater than 1/4 of the thickness T of the wavelength conversion member 20 have. This is for preventing the reflection member 30 from sufficiently peeling the wavelength conversion member 20 by sufficiently covering the side surface of the wavelength conversion member 20. The difference W4 between the height of the upper surface 30a of the reflective member 30 and the height of the upper surface 10a of the semiconductor element 10 is 3/4 of the thickness T of the wavelength conversion member 20 , The diffusion member 40 does not sufficiently cover the side surface of the wavelength conversion member 20.

The difference W4 between the height of the upper surface 30a of the reflective member 30 and the height of the upper surface 10a of the semiconductor element 10 is equal to 1/4 of the thickness T of the wavelength conversion member 20 Or more, and may be 3/4 or less, but is not limited thereto.

When the edge of the wavelength conversion member 20 protrudes from the edge of the semiconductor element 10 as described above, the reflective member 30 may have a first width W2 and a second width W3 different from each other . The first width W2 is a width of the reflection member 30 in a region overlapping the side surface of the semiconductor element 10 and the second width W3 is a width of a region overlapping the side surface of the wavelength conversion member 20 Is the width of the reflecting member (30). The second width W3 of the reflecting member 30 is equal to or greater than the first width W2 of the reflecting member 30 by the width W1 of the area of the wavelength converting member 20 protruding from the edge of the semiconductor element 10 ).

For example, when the width W1 of the region of the wavelength conversion member 20 protruding from the edge of the semiconductor element 10 is 50 mu m and the first width W2 of the reflection member 30 is 100 mu m, And the second width W3 of the second electrode 30 may be 50 mu m.

In particular, the second width W3 of the reflective member 30 may be equal to or wider than the width W1 of the area of the wavelength conversion member 20 protruding from the edge of the semiconductor element 10. This is because if the second width W3 of the reflective member 30 is narrower than the width W1 of the region of the wavelength conversion member 20 protruding from the edge of the semiconductor element 10, The side surface of the base 20 can not be sufficiently fixed.

 The first width W2 of the reflecting member 30 is set to be shorter than the first width W2 of the wavelength conversion member 20 projected from the edge of the semiconductor element 10 so that the reflecting member 30 sufficiently fixes the side surface of the wavelength conversion element 20. [ Of the width W1 of the area of the first area (W1), but is not limited thereto.

The reflecting member 30 may be made of a material capable of reflecting light. In one example, the reflective member 30 may include Phenyl Silicone or Methyl Silicone. Further, the reflecting member 30 may include a reflection particle. In one example, the reflecting member 30 may be a glass in which TiO2 is dispersed.

The diffusion member 40 may be disposed to cover the upper surface 20a of the wavelength conversion member 20 to diffuse the light emitted from the semiconductor element 10 and passing through the wavelength conversion member 20. [ Furthermore, the diffusion member 40 may be arranged so as to cover the side of the wavelength conversion member 20.

Specifically, the diffusing member 40 is disposed so as to completely cover the upper surface 20a of the wavelength conversion member 20 and the upper surface 30a of the reflection member 30 so as to cover the upper surface 20a of the wavelength conversion member 20, And the height difference of the upper surface 30a of the reflection member 30 can be compensated. Therefore, the height between the upper surface 20a of the wavelength conversion member 20 and the lower surface 20b of the wavelength conversion member 20, that is, the side surface of the wavelength conversion member 20, The side surface of the wavelength conversion member 20 can be completely surrounded by the reflective member 30 and the diffusion member 40. The reflective member 30 and the diffusion member 40 are in contact with each other.

Accordingly, the wavelength conversion member 20 can also be completely surrounded by the reflective member 30, the diffusion member 40, and the semiconductor element 10. Therefore, the semiconductor device package 1000 of the embodiment can effectively prevent the wavelength conversion member 20 from peeling off.

The diffusion member 40 may include the same material as the polymer resin included in the wavelength conversion member 20 for adhesion between the wavelength conversion member 20 and the diffusion member 40. For example, the diffusion member 40 may comprise a transparent silicone resin. At this time, the diffusion member 40 is disposed so as to completely cover the upper surface of the reflection member 30, and the edge of the diffusion member 40 and the edge of the reflection member 30 can coincide with each other. In this case, it is possible to effectively prevent the diffusion member 40 from being lifted from the upper surface of the reflecting member 30. [

FIG. 2 is a cross-sectional view of the semiconductor device of FIG. 1B, showing that the semiconductor device is a light emitting device.

2, the semiconductor device 10 of the embodiment includes a light emitting structure 12 disposed at a lower portion of a substrate 11, first and second electrode pads 15a and 15b (not shown) disposed at one side of the light emitting structure 12, Emitting device. In the embodiment, the first and second electrode pads 15a and 15b are disposed under the light emitting structure 12.

The substrate 11 includes a conductive substrate or an insulating substrate. The substrate 11 may be a material suitable for semiconductor material growth or a carrier wafer. The substrate 11 may be formed of a material selected from the group consisting of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. The substrate 11 can be removed as needed.

The light emitting structure 12 includes a first semiconductor layer 12a, an active layer 12b, and a second semiconductor layer 12c. In general, the light emitting structure 12 may be cut along with the substrate 11 and separated into a plurality of light emitting structures 12.

The first semiconductor layer 12a may be formed of a compound semiconductor such as Group III-V or II-VI, and the first semiconductor layer 12a may be doped with a first dopant. The first semiconductor layer 12a may be a semiconductor material having a composition formula of In _{x 1} Al _{y 1} Ga _1-x1-y1 N (0? _X1? 1, 0? Y1 = 1, 0? X1 + y1? GaN, AlGaN, InGaN, InAlGaN, and the like. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first semiconductor layer 12a doped with the first dopant may be an n-type semiconductor layer.

The active layer 12b is a layer where electrons (or holes) injected through the first semiconductor layer 12a and holes (or electrons) injected through the second semiconductor layer 12c meet. The active layer 12b transitions to a low energy level as electrons and holes are recombined, and light having a wavelength corresponding thereto can be generated.

The active layer 12b may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, Is not limited thereto.

The second semiconductor layer 12c is formed on the active layer 12b and may be formed of a compound semiconductor such as group III-V or II-VI group. The second semiconductor layer 12c may be doped with a second dopant . A second semiconductor layer (12c) is a semiconductor material having a compositional formula of _{In x5 Al y2 Ga 1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5 + y2≤1) or AlInN, AlGaAs , GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second semiconductor layer 12c doped with the second dopant may be a p-type semiconductor layer.

An electron blocking layer (not shown) may be disposed between the active layer 12b and the second semiconductor layer 12c. The electron blocking layer can block the flow of electrons supplied from the first semiconductor layer 12a to the second semiconductor layer 12c and increase the probability of recombination of electrons and holes in the active layer 12b. The energy band gap of the electron blocking layer may be larger than the energy band gap of the active layer 12b and / or the second semiconductor layer 12c. The electron blocking layer may be formed of a semiconductor material having a composition formula of In _{x 1} Al _{y 1} Ga ₁ -x ₁ -y ₁ N (0? X _{1? 1} , 0? Y _{1? 1} , 0? X 1 + _{y 1? 1} ), for example, AlGaN, InGaN, InAlGaN, and the like, but is not limited thereto.

The light emitting structure 12 includes a through hole H formed in the second semiconductor layer 12c in the direction of the first semiconductor layer 12a. The through hole H exposes the first semiconductor layer 12a on the bottom surface and can expose the first and second semiconductor layers 12a and 12c and the active layer 12b on the side surface. The first electrode 13a may be disposed so as to be electrically connected to the first semiconductor layer 12a exposed by the through hole H. [ The second electrode 13b, which is electrically connected to the second semiconductor layer 12c, may be disposed.

The first and second electrodes 13a and 13b may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGTO), zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, ITO, and the like, and is not limited to these materials. The first and second electrodes 13a and 13b may be formed of a material selected from the group consisting of In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, Cr, Mo, Nb, Al, Ni, Cu, and WTi.

The insulating layer 14 may be disposed to surround the first and second semiconductor layers 12a and 12c and the active layer 12b exposed at the side of the through hole H. [ As shown, the insulating layer 14 may further surround the side surface of the light emitting structure 12, and the forming position of the insulating layer 14 is not limited thereto.

The first and second electrodes 13a and 13b may be electrically connected to the first and second electrode pads 15a and 15b, respectively.

Hereinafter, the semiconductor device package of another embodiment will be described in detail.

3 is a cross-sectional view of the semiconductor device package I-I 'of another embodiment.

3, the semiconductor device package of another embodiment may be arranged so that the diffusion member 40 surrounds the wavelength conversion member 20, the upper surface of the reflection member 30, and the side surface of the reflection member 30. In this case, since the diffusion member 40 completely covers the side surfaces of the wavelength conversion member 20 and the reflection member 30, the fixing force of the wavelength conversion member 20 can be improved.

The semiconductor device package 100 of the embodiment of the present invention as described above is characterized in that the reflection member 30 surrounding four sides of the semiconductor element 10 is disposed on the side surface of the wavelength conversion member 20 disposed on the upper surface of the semiconductor element 10 It can be arranged to cover up to a part. The diffusing member 40 is disposed so as to cover the upper surface of the wavelength converting member 20 and the reflecting member 30 so that the side surface of the wavelength converting member 20 is covered by the reflecting member 30 and the diffusing member 40 It can be completely wrapped. Thus, it is possible to prevent the wavelength conversion member 20 from being peeled off from the upper surface of the semiconductor element 10.

Hereinafter, a method of manufacturing the semiconductor device package of the embodiment will be described in detail.

4A to 4F are cross-sectional views showing a method for manufacturing a semiconductor device package of the embodiment.

As shown in FIG. 4A, a plurality of semiconductor elements 10 can be disposed on the first fixed substrate 51a. The first fixing substrate 51a may be a tape having an adhesive force, but is not limited thereto.

Then, the wavelength conversion member 20 is disposed on the upper surface of each semiconductor element 10. For example, when the wavelength conversion member 20 is in the form of a film, the wavelength conversion member 20 can be attached to the upper surface of the semiconductor element 10. Particularly, in order to improve the light extraction efficiency and the color characteristic of the semiconductor device package and the process margin when the wavelength conversion member 20 is mounted on the semiconductor element 10, the edge of the wavelength conversion member 20 is separated from the semiconductor element 10 As shown in Fig.

4B, the reflective member 30 is formed in a spaced-apart area of the semiconductor element 10. [ The reflective member 30 may be formed by applying a liquid reflective material so as to cover the semiconductor element 10 and curing the reflective material.

4C, the diffusion member 40 is formed so as to completely surround the adjacent semiconductor elements 10 and the wavelength converting member 20 and the reflecting member 30. [ The diffusion member 40 may be sprayed or applied in a liquid form. For example, a diffusion material may be applied on the wavelength conversion member 20 and the reflective member 30, and the diffusion member 40 may be formed by using a mold.

4D, a plurality of semiconductor elements 10 attached on the first fixed substrate 51a are transferred to the second fixed substrate 51b. At this time, the diffusion member 20 is brought into close contact with the second fixed substrate 51b, so that the back surface of the plurality of semiconductor elements 10 can be exposed. At this time, the back surface of the plurality of semiconductor elements 10 is one surface on which the first and second electrode pads (15a in Fig. 1B and 15b in Fig. 1B) are exposed.

The transfer of the semiconductor element 10 to the second fixed substrate 51b as described above is carried out in such a manner that the diffusing member 40 is disposed between the plurality of semiconductor elements 10, the wavelength converting member 20, and the reflecting member 30 The semiconductor element 10 and the reflective member 30 can not be distinguished from each other on the upper surface of the diffusion member 40. [

Therefore, as shown in FIG. 4E, the semiconductor element 10 and the reflection member 30 are checked on the upper surface, and the adjacent semiconductor elements 10 are cut along the scribing line between the adjacent semiconductor elements 10 can do. Cutting between the adjacent semiconductor elements 10 can be performed by cutting the reflecting member 30 and the diffusion member 40 of the adjacent semiconductor element 10.

Then, as shown in FIG. 4F, the plurality of semiconductor elements 10 are transferred to the third fixed substrate 52. At this time, the semiconductor element 10 is brought into close contact with the third fixed substrate 52, and the diffusion member 40 can be exposed from the upper surface of the semiconductor device package 100. The third fixed substrate 52 has elasticity and can be expended upward, downward, left, and right so that adjacent semiconductor device packages 100 can be spaced apart from each other.

5A to 5H are cross-sectional views showing a method of manufacturing a semiconductor device package according to another embodiment.

As shown in FIG. 5A, a plurality of semiconductor elements 10 can be disposed on the first fixed substrate 51a. The first fixing substrate 51a may be a tape having an adhesive force, but is not limited thereto.

Then, the wavelength conversion member 20 is disposed on the upper surface of each semiconductor element 10. For example, when the wavelength conversion member 20 is in the form of a film, the wavelength conversion member 20 can be attached to the upper surface of the semiconductor element 10. Particularly, in order to improve the light extraction efficiency and the color characteristic of the semiconductor device package and the process margin when the wavelength conversion member 20 is mounted on the semiconductor element 10, the edge of the wavelength conversion member 20 is separated from the semiconductor element 10 As shown in Fig.

As shown in FIG. 5B, the reflective member 30 is formed in a spaced-apart region of the semiconductor element 10. The reflection member 30 may be formed by applying a liquid reflection material to a spaced-apart region of the semiconductor element 10 and curing the same.

Next, as shown in FIG. 5C, it is possible to cut between adjacent semiconductor elements 10 along a scribing line. At this time, the reflection member 30 between the adjacent semiconductor elements 10 is cut. Then, as shown in FIG. 5D, the plurality of semiconductor elements 10 separated on the first fixed substrate 51a are rearranged to be spaced apart from each other.

5E, a diffusion member 40 is formed so as to completely surround the adjacent semiconductor elements 10 and the wavelength converting member 20 and the reflecting member 30. [ The diffusion member 40 may be sprayed or applied in a liquid form. For example, a diffusion material may be applied on the wavelength conversion member 20 and the reflection member 30, and the diffusion member 40 may be formed using a mold.

Then, as shown in FIG. 5F, the plurality of semiconductor elements 10 attached on the first fixed substrate 51a are transferred to the second fixed substrate 51b. At this time, the diffusion member 20 is brought into close contact with the second fixed substrate 51b, so that the back surface of the plurality of semiconductor elements 10 can be exposed. At this time, the back surface of the plurality of semiconductor elements 10 is one surface on which the first and second electrode pads (15a in Fig. 1B and 15b in Fig. 1B) are exposed.

5G, the semiconductor element 10 and the reflection member 30 can be checked on the upper surface to cut between the adjacent semiconductor elements 10 along the scribing line.

Next, as shown in FIG. 5H, the plurality of semiconductor elements 10 are transferred to the third fixed substrate 52. At this time, the semiconductor element 10 is brought into close contact with the third fixed substrate 52, and the diffusion member 40 can be exposed from the upper surface of the semiconductor device package 100. The third fixed substrate 52 has elasticity and can be expended upward, downward, left, and right so that adjacent semiconductor device packages 100 can be spaced apart from each other.

A general method of manufacturing a semiconductor device package includes a step of disposing a wavelength conversion film on a semiconductor element and transferring the semiconductor element to another fixed substrate in a state in which the wavelength conversion film is exposed. Thus, the wavelength conversion film can be peeled from the upper surface of the semiconductor element.

On the other hand, the manufacturing method of the semiconductor device package of the embodiment of the present invention is such that the upper surface and the side surface of the wavelength conversion film 20 are completely surrounded by the reflection member 30 and the diffusion member 40, And transferred to another fixed substrate. Therefore, it is possible to effectively prevent the wavelength conversion film 20 from being peeled off from the semiconductor element 10 during the transferring step.

The semiconductor device package 100 may be used as a light source of a lighting system, for example, as a light source of a video display device or a lighting device.

When used as a backlight unit of a video display device, it can be used as an edge-type backlight unit or as a direct-type backlight unit. When used as a light source of a lighting device, it can be used as a regulator or bulb type. It is possible.

The light emitting element includes a laser diode in addition to the light emitting diode described above.

The laser diode may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure, like the light emitting element. Then, electro-luminescence (electroluminescence) phenomenon in which light is emitted when an electric current is applied after bonding the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor is used, And phase. That is, the laser diode can emit light having one specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and a constructive interference phenomenon. It can be used for optical communication, medical equipment and semiconductor processing equipment.

As the light receiving element, a photodetector, which is a kind of transducer that detects light and converts the intensity of the light into an electric signal, is exemplified. As such a photodetector, a photodiode (e.g., a PD with a peak wavelength in a visible blind spectral region or a true blind spectral region), a photodiode (e.g., a photodiode such as a photodiode (silicon, selenium), a photoconductive element (cadmium sulfide, cadmium selenide) , Photomultiplier tube, phototube (vacuum, gas-filled), IR (Infra-Red) detector, and the like.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor, which is generally excellent in photo-conversion efficiency. Alternatively, the photodetector has a variety of structures, and the most general structure includes a pinned photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal-semiconductor metal (MSM) photodetector have.

The photodiode, like the light emitting device, may include the first conductivity type semiconductor layer having the structure described above, the active layer, and the second conductivity type semiconductor layer, and may have a pn junction or a pin structure. The photodiode operates by applying reverse bias or zero bias. When light is incident on the photodiode, electrons and holes are generated and a current flows. At this time, the magnitude of the current may be approximately proportional to the intensity of the light incident on the photodiode.

A photovoltaic cell or a solar cell is a type of photodiode that can convert light into current. The solar cell, like the light emitting device, may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure.

In addition, it can be used as a rectifier of an electronic circuit through a rectifying characteristic of a general diode using a p-n junction, and can be applied to an oscillation circuit or the like by being applied to a microwave circuit.

In addition, the above-described semiconductor element is not necessarily implemented as a semiconductor, and may further include a metal material as the case may be. For example, a semiconductor device such as a light receiving element may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, Or may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10: Semiconductor element 10a: Semiconductor element upper surface
11: substrate 12a: first semiconductor layer
12b: active layer 12c: second semiconductor layer
12: light emitting structure 13a: first electrode
13b: second electrode 14: insulating layer
15a: first electrode pad 15b: second electrode pad
20: wavelength conversion member 20a: wavelength conversion member upper surface
20b: wavelength converting member lower surface 30: reflecting member
30a: reflection member upper surface 40: diffusion member
51a: first fixed substrate 51b: second fixed substrate
52: third fixed substrate

Claims (9)

A semiconductor device;
A wavelength conversion element disposed on an upper surface of the semiconductor element;
A reflective member surrounding four sides of the semiconductor element and having a height of an upper surface higher than a height of an upper surface of the semiconductor element and lower than a height of an upper surface of the wavelength conversion element; And
And a diffusion member disposed to cover the reflective member and the upper surface of the wavelength conversion member. The method according to claim 1,
Wherein an interface between the upper surface of the reflective member and the lower surface of the diffusion member is in contact with the side surface of the reflective member. The method according to claim 1,
Wherein a difference between a height of the upper surface of the reflective member and a height of the upper surface of the semiconductor element is not less than 1/4 and not more than 3/4 of the thickness of the wavelength conversion member. The method according to claim 1,
And an edge of the wavelength conversion member protrudes from an edge of the semiconductor element. 5. The method of claim 4,
Wherein the reflective member includes a first width and a second width that are different from each other,
Wherein the first width is a width of the reflective member in a region overlapping a side surface of the semiconductor element and the second width is a width of a reflective member in a region overlapping a side surface of the wavelength conversion member. 6. The method of claim 5,
And the second width is equal to or wider than the width of the region of the wavelength converting member protruding from the edge of the semiconductor element. The method according to claim 1,
Wherein the diffusion member and the wavelength conversion member comprise the same material. 8. The method of claim 7,
Wherein the diffusion member and the wavelength conversion member comprise a transparent silicone resin. The method according to claim 1,
And the diffusion member is arranged to surround up to four sides of the reflection member.

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