KR102385938B1 - Semiconductor device package - Google Patents

Abstract

An embodiment includes a first semiconductor device; and a second semiconductor device disposed on the first semiconductor device, wherein the first semiconductor device includes: a first substrate; a plurality of first semiconductor structures disposed on the first substrate; and a first connection electrode electrically connecting the plurality of first semiconductor structures, wherein the second semiconductor device includes: a second substrate spaced apart from the first substrate; a plurality of second semiconductor structures disposed on one surface of the second substrate facing the first substrate; and a second connection electrode electrically connecting the plurality of second semiconductor structures, wherein the second connection electrode is disposed on the first connection electrode and electrically connected thereto.

Description

Semiconductor device package {SEMICONDUCTOR DEVICE PACKAGE}

The embodiment relates to a semiconductor device package.

Semiconductor devices including GaN and AlGaN compounds have many advantages, such as wide and easily adjustable band gap energy, and thus are widely used as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials of semiconductors have developed red, green, and Various colors such as blue and ultraviolet light can be implemented, and efficient white light can be realized by using fluorescent materials or combining colors. , safety, and environmental friendliness.

In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using a semiconductor group 3-5 or group 2-6 compound semiconductor material, it absorbs light in various wavelength ranges and generates a photocurrent. By doing so, light of various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy adjustment of device materials, so it can be easily used for power control or ultra-high frequency circuits or communication modules.

However, in the conventional semiconductor device package, since the semiconductor device is disposed only on one surface of the substrate, it is difficult to emit light from both sides. In particular, when replacing the filament of a light bulb with a semiconductor device, a semiconductor device package capable of emitting light from both sides is required.

The embodiment provides a semiconductor device package capable of emitting light from both sides.

The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned here will be clearly understood by those skilled in the art from the following description.

A semiconductor device package according to an embodiment includes a first semiconductor device; and a second semiconductor device disposed on the first semiconductor device, wherein the first semiconductor device includes: a first substrate; a plurality of first semiconductor structures disposed on the first substrate; and a first connection electrode electrically connecting the plurality of first semiconductor structures, wherein the second semiconductor device includes: a second substrate spaced apart from the first substrate; a plurality of second semiconductor structures disposed on one surface of the second substrate facing the first substrate; and a second connection electrode electrically connecting the plurality of second semiconductor structures, the second connection electrode being disposed on the first connection electrode and electrically connected thereto.

The first semiconductor device may include a first pad and a second pad disposed on a first substrate, and the first connection electrode may be electrically connected to the first pad and the second pad.

The first semiconductor device includes a first insulating layer covering the plurality of first semiconductor structures, and a first reflective layer covering the first insulating layer, and the first connection electrode includes a first insulating layer and a first reflective layer. It may pass through and be electrically connected to the plurality of first semiconductor devices.

The first semiconductor structure includes a first conductivity type semiconductor layer disposed on the first substrate, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and the first connection electrode may electrically connect the first conductivity-type semiconductor layer of any one first semiconductor element and the second conductivity-type semiconductor layer of the adjacent first semiconductor element.

The second semiconductor device includes a second insulating layer covering the plurality of second semiconductor structures, and a second reflective layer covering the second insulating layer, and the second connection electrode includes a second insulating layer and a second reflective layer. It may pass through and be electrically connected to the plurality of second semiconductor devices.

The first semiconductor device includes a first protective layer covering the first connection electrode, and a first bonding electrode disposed on the first protection layer, wherein the first bonding electrode is electrically connected to the first connection electrode can be connected

The first bonding electrode may contact the first pad and the second pad.

The second semiconductor device includes a second protective layer covering the second connection electrode, and a second bonding electrode disposed under the second protection layer, wherein the second bonding electrode is electrically connected to the second connection electrode. can be connected to

The second bonding electrode may pass through the second protective layer to be electrically connected to the second connection electrode.

The second bonding electrode may be bonded to the first bonding electrode.

According to an embodiment, it is possible to emit light from both sides of the semiconductor device package.

Various and advantageous advantages and effects of the present invention are not limited to the above, and will be more easily understood in the course of describing specific embodiments of the present invention.

1 is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention;
Figure 2a is an enlarged view of part A of Figure 1,
Figure 2b is an enlarged view of part B of Figure 1,
3A to 3H are views for explaining a process of manufacturing the first semiconductor device of the present invention;
4A to 4F are views for explaining a process of manufacturing the second semiconductor device of the present invention;
5A to 5C are diagrams for explaining a process of bonding a first semiconductor device and a second semiconductor device according to the present invention;
6 is a conceptual diagram of a lamp according to an embodiment of the present invention.

The present embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to each of the embodiments described below.

Even if a matter described in a specific embodiment is not described in another embodiment, it may be understood as a description related to another embodiment unless a description contradicts or contradicts the matter in another embodiment.

For example, if a characteristic of configuration A is described in a specific embodiment and a feature of configuration B is described in another embodiment, the opposite or contradictory description is provided even if an embodiment in which configuration A and configuration B are combined is not explicitly described. Unless otherwise stated, it should be understood as belonging to the scope of the present invention.

In the description of the embodiment, in the case where one element is described as being formed in "on or under" of another element, on (above) or below (on) or under) includes both elements in which two elements are in direct contact with each other or one or more other elements are disposed between the two elements indirectly. In addition, when expressed as "up (up) or down (on or under)", it may include the meaning of not only an upward direction but also a downward direction based on one element.

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those of ordinary skill in the art to which the present invention pertains can easily implement them.

1 is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention, FIG. 2A is an enlarged view of part A of FIG. 1 , and FIG. 2B is an enlarged view of part B of FIG. 1 .

1, 2A, and 2B , a semiconductor device package according to an embodiment of the present invention includes a first semiconductor device 100 and a second semiconductor device disposed on the first semiconductor device 100 ( 200) may be included.

The first semiconductor device 100 includes a first substrate 110 , a plurality of first semiconductor structures 120 disposed on the first substrate 110 , and a plurality of first semiconductor structures 120 electrically connected to each other. A first connection electrode 130 may be included.

The first substrate 110 may include a light-transmitting, conductive, or insulating substrate. The first substrate 110 may be a material suitable for semiconductor material growth or a carrier wafer. The first substrate 110 may be formed of a material selected from among sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ O ₃ . It does not limit the invention.

The first semiconductor structure 120 may include a first conductivity type semiconductor layer 122 , an active layer 123 , and a second conductivity type semiconductor layer 124 . In addition, the first semiconductor structure 120 may further include a buffer layer (not shown) disposed between the first substrate 110 and the first conductivity-type semiconductor layer 122 .

The first semiconductor structure 120 may be grown on the first substrate 110 , but is not limited thereto. Exemplarily, the first semiconductor structure 120 may be grown on a separate growth substrate and then adhered to the first substrate 110 .

The first conductivity-type semiconductor layer 122 may be implemented with a group III-V or group II-VI compound semiconductor, and may be doped with a first dopant. The first conductivity type semiconductor layer 122 is a semiconductor material having a composition formula of In _x1 Al _y1 Ga ₁ -x1 _-y1 N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), e.g. For example, it may be selected from GaN, AlGaN, InGaN, InAlGaN, and the like. In addition, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductivity-type semiconductor layer 122 doped with the first dopant may be an n-type semiconductor layer.

The active layer 123 is disposed between the first conductivity type semiconductor layer 122 and the second conductivity type semiconductor layer 124 . The active layer 123 is a layer in which electrons (or holes) injected through the first conductivity type semiconductor layer 122 and holes (or electrons) injected through the second conductivity type semiconductor layer 124 meet. The active layer 123 may transition to a low energy level as electrons and holes recombine, and may generate light having a wavelength of visible light or ultraviolet light.

The active layer 123 may have any one of a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, and the active layer 123 may have a structure. ) structure is not limited thereto.

The second conductivity-type semiconductor layer 124 may be implemented with a group III-V group or group II-VI compound semiconductor, and the second conductivity-type semiconductor layer 124 may be doped with a second dopant. The second conductivity type semiconductor layer 124 is a semiconductor material having a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1) or AlInN , AlGaAs, GaP, GaAs, GaAsP, may be formed of a material selected from AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductivity-type semiconductor layer 124 doped with the second dopant may be a p-type semiconductor layer.

The first electrode 125 may be electrically connected to the first conductivity-type semiconductor layer 122 , and the second electrode 126 may be electrically connected to the second conductivity-type semiconductor layer 124 . The first electrode 125 and the second electrode 126 may be ohmic electrodes, but are not limited thereto.

The first electrode 125 and the second electrode 126 include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium zinc oxide (IGZO). ), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, It may include at least one of Ru, Mg, Zn, Pt, Au, and Hf, but is not limited to these materials.

The first insulating layer 140 may be formed on the first substrate 110 to cover the plurality of first semiconductor structures 120 . The plurality of first semiconductor structures 120 may be disposed inside the first insulating layer 140 . The first insulating layer 140 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. However, the present invention is not limited thereto.

The first reflective layer 170 may be disposed on the first insulating layer 140 . The first reflective layer 170 may reflect light emitted from the plurality of first semiconductor structures 120 . Accordingly, the light L1 emitted from the plurality of first semiconductor structures 120 may pass through the first substrate 110 and be emitted to the outside.

Various materials capable of reflecting the light emitted from the plurality of first semiconductor structures 120 may be selected for the first reflective layer 170 . The first insulating layer 140 may be formed as a single layer or multiple layers. Exemplarily, the first reflective layer 170 may be a distributed Bragg reflector (DBR) having a multilayer structure including Si oxide or a Ti compound. However, the present invention is not limited thereto, and the first reflective layer 170 may include various reflective structures.

The first connection electrode 130 may pass through the first insulating layer 140 and the first reflective layer 170 to electrically connect the plurality of first semiconductor structures 120 . The first connection electrode 130 electrically connects the first conductivity type semiconductor layer 122 of one of the first semiconductor structures 120A and the second conductivity type semiconductor layer 124 of the adjacent first semiconductor structure 120B. can be connected to That is, the first connection electrode 130 may connect the plurality of first semiconductor structures 120 in series. However, the present invention is not limited thereto, and the first connection electrode 130 may connect the plurality of first semiconductor structures 120 in series and/or in parallel.

The first connection electrode 130 may be electrically connected to the first pad 181 and the second pad 182 disposed on the edge of the substrate.

The first protective layer 150 may be disposed on the first connection electrode 130 . The first protective layer 150 may be formed by selecting at least one selected from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. However, the present invention is not limited thereto. The first protective layer 150 may expose the end 131 of the first connection electrode 130 disposed on the edge of the first substrate 110 .

The first bonding electrode 160 may be disposed on the first protective layer 150 . The first bonding electrode 160 may extend to the edge of the first substrate 110 to be electrically connected to the end portion 131 of the first connection electrode 130 . The first pad 181 and the second pad 182 may be defined as regions in which the end 131 of the first connection electrode 130 and the first bonding electrode 160 overlap.

The second semiconductor device 200 includes a second substrate 210 , a plurality of second semiconductor structures 220 disposed on the second substrate 210 , and a plurality of second semiconductor structures 220 electrically connected to each other. A second connection electrode 230 may be included.

The second substrate 210 may include a light-transmitting, conductive, or insulating substrate. The substrate may be a carrier wafer or a material suitable for semiconductor material growth. The substrate may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ O ₃ , limiting the present invention to this not.

The second semiconductor structure 220 may include a first conductivity type semiconductor layer 222 , an active layer 223 , and a second conductivity type semiconductor layer 224 . In addition, the second semiconductor structure 220 may further include a buffer layer disposed between the second substrate 210 and the first conductivity-type semiconductor layer 222 .

The second semiconductor structure 220 may be grown on one surface 211 of the second substrate 210 facing the first substrate 110 , but is not limited thereto. Exemplarily, the second semiconductor structure 220 may be grown on a separate growth substrate and then adhered to one surface of the second substrate 210 . According to an embodiment, the first semiconductor structure 120 and the second semiconductor structure 220 may be disposed between the first substrate 110 and the second substrate 210 .

The configuration of the first conductivity type semiconductor layer 222 , the active layer 223 , the second conductivity type semiconductor layer 224 , the first electrode 225 , and the second electrode 226 of the second semiconductor structure 220 is the second 1 It is the same as that of the semiconductor structure 120 .

The second insulating layer 240 may be formed on one surface of the second substrate 210 to cover the plurality of second semiconductor structures 220 . The plurality of second semiconductor structures 220 may be disposed inside the second insulating layer 240 . The second insulating layer 240 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. However, the present invention is not limited thereto.

The second reflective layer 270 may be disposed under the second insulating layer 240 . The second reflective layer 270 may reflect light emitted from the plurality of second semiconductor structures 220 . The light L2 emitted from the plurality of second semiconductor structures 220 may pass through the second substrate 210 and be emitted to the outside. Accordingly, the package according to the embodiment may be capable of emitting light from both sides.

Various materials capable of reflecting the light emitted from the plurality of second semiconductor structures 220 may be selected for the second reflective layer 270 . The second reflective layer 270 may be formed as a single layer or multiple layers. Exemplarily, the second reflective layer 270 may be a distributed Bragg reflector (DBR) having a multilayer structure including Si oxide or a Ti compound. However, the present invention is not limited thereto, and the second reflective layer 270 may include various reflective structures.

The second connection electrode 230 may pass through the second insulating layer 240 and the second reflective layer 270 to electrically connect the plurality of second semiconductor structures 220 . The second connection electrode 230 electrically connects the first conductivity type semiconductor layer 222 of any one second semiconductor structure 220 and the second conductivity type semiconductor layer 224 of the adjacent second semiconductor structure 220 . can be connected to That is, the second connection electrode 230 may connect the plurality of second semiconductor structures 220 in series. However, the present invention is not limited thereto, and the second connection electrode 230 may connect the plurality of first semiconductor structures 120 in series/parallel.

The second protective layer 250 may be disposed under the second connection electrode 230 . The second protective layer 250 may be formed by selecting at least one selected from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. However, the present invention is not limited thereto.

The second bonding electrode 260 may be disposed under the second passivation layer 250 . The second bonding electrode 260 may pass through the second protective layer 250 to be electrically connected to the second connection electrode 230 .

The second bonding electrode 260 may be bonded on the first bonding electrode 160 . Accordingly, the power applied from the first and second pads 181 and 182 may be applied to the first semiconductor structure 120 and the second semiconductor structure 220 . Power applied from the first and second pads 181 and 182 may apply power to the plurality of first semiconductor structures 120 through the first connection electrode 130 . In addition, the power applied from the first and second pads 181 and 182 passes through the first junction electrode 160 , the second junction electrode 260 , and the second connection electrode 230 to the plurality of second semiconductors. It may be applied to the structure 220 .

According to an embodiment, the light L1 emitted from the first semiconductor device 100 is emitted to the rear surface of the first substrate 110 , and the light L2 emitted from the second semiconductor device 200 is the second substrate It may be emitted to the upper surface of 210 . Thus, double-sided light emission can be made possible.

In this case, white light or monochromatic light may be realized by further disposing a phosphor layer on the first semiconductor device 100 and the second semiconductor device 200 . For example, the phosphor layer may be disposed on the rear surface of the first substrate 110 and the upper surface of the second substrate 210 , respectively. Various materials capable of realizing a desired color may be selected for the phosphor layer.

3A to 3H are diagrams for explaining a process of manufacturing the first semiconductor device of the present invention.

Referring to FIG. 3A , a first conductivity type semiconductor layer 122 , an active layer 123 , a second conductivity type semiconductor layer 124 , and a second electrode 126 layer are sequentially formed on the first substrate 110 . can do. The semiconductor structure layer may be grown by a vapor deposition method such as Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), or Hydride Vapor Phase Epitaxy (HVPE), but the present invention is not limited thereto. Although not shown, a buffer layer may be further disposed between the first conductivity-type semiconductor layer 122 and the first substrate 110 .

3B and 3C , a plurality of semiconductor structures may be formed through mesa etching. Thereafter, a portion of the first conductivity-type semiconductor layer 122 may be exposed again through mesa etching, and the first electrode 125 may be formed thereon. The first electrode 125 and the second electrode 126 may be an ohmic electrode and/or a pad electrode.

Referring to FIG. 3D , the first insulating layer 140 covering the plurality of first semiconductor structures 120 may be formed. The plurality of first semiconductor structures 120 may be disposed inside the first insulating layer 140 . The first insulating layer 140 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. However, the present invention is not limited thereto.

Referring to FIG. 3E , the first reflective layer 170 may be formed on the first insulating layer 140 . Various materials capable of reflecting the light emitted from the plurality of first semiconductor structures 120 may be selected for the first reflective layer 170 . The first reflective layer 170 may be formed as a single layer or multiple layers. Exemplarily, the first reflective layer 170 may be a distributed Bragg reflector (DBR) having a multilayer structure including Si oxide or a Ti compound.

Thereafter, a through hole 141 may be formed in the first insulating layer 140 and the first reflective layer 170 . The first electrode 125 and the second electrode 126 may be exposed through the through hole 141 .

Referring to FIG. 3F , a plurality of first connection electrodes 130 may be formed on the first reflective layer 170 . The first connection electrode 130 may be disposed in the through hole 141 to electrically connect the plurality of first semiconductor devices 100 . The first connection electrode 130 may include an end portion 131 extending to the edge of the substrate.

The first connection electrode 130 may be made of at least one material selected from the group consisting of materials such as Cr, Al, Ti, Ni, Au, and alloys thereof, and may be formed of a single layer or a plurality of layers. .

Referring to FIG. 3G , the first protective layer 150 may be disposed on the plurality of first connection electrodes 130 . The first protective layer 150 may be formed by selecting at least one selected from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. However, the present invention is not limited thereto. The first protective layer 150 may expose the end 131 of the first connection electrode 130 disposed on the edge of the first substrate 110 .

Referring to FIG. 3H , the first bonding electrode 160 may be disposed on the first protective layer 150 . The first bonding electrode 160 may extend to the edge of the first substrate 110 to be electrically connected to the end portion 131 of the first connection electrode 130 . The first pad 181 and the second pad 182 may be defined as regions in which the end 131 of the first connection electrode 130 and the first bonding electrode 160 overlap.

4A to 4F are diagrams for explaining a process of manufacturing the second semiconductor device of the present invention.

Referring to FIG. 4A , a plurality of second semiconductor structures 220 may be formed on the second substrate 210 . In the plurality of second semiconductor structures 220 , a first conductivity type semiconductor layer 222 , an active layer 223 , a second conductivity type semiconductor layer 224 , and a second electrode 226 layer may be sequentially disposed. The semiconductor structure layer may be grown by a vapor deposition method such as Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), or Hydride Vapor Phase Epitaxy (HVPE), but the present invention is not limited thereto. Although not shown, a buffer layer may be further disposed between the second conductivity-type semiconductor layer 224 and the second substrate 210 .

Referring to FIG. 4B , a portion of the first conductivity type semiconductor layer 222 may be exposed through mesa etching, and the first electrode 225 may be formed thereon. The first electrode 225 and the second electrode 226 may be an ohmic electrode and/or a pad electrode.

Thereafter, a second insulating layer 240 covering the plurality of second semiconductor structures 220 may be formed. The plurality of second semiconductor structures 220 may be disposed inside the second insulating layer 240 . The second insulating layer 240 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. However, the present invention is not limited thereto.

Referring to FIG. 4C , a second reflective layer 270 may be formed on the second insulating layer 240 . Various materials capable of reflecting the light emitted from the plurality of second semiconductor structures 220 may be selected for the second reflective layer 270 . The second reflective layer 270 may be formed as a single layer or multiple layers. Exemplarily, the second reflective layer 270 may be a distributed Bragg reflector (DBR) having a multilayer structure including Si oxide or a Ti compound.

Thereafter, a through hole 241 may be formed in the second insulating layer 240 and the second reflective layer 270 . The first electrode 225 and the second electrode 226 may be exposed through the through hole 241 .

Referring to FIG. 4D , a plurality of second connection electrodes 230 may be formed on the second reflective layer 270 . The second connection electrode 230 may pass through the second insulating layer 240 and the second reflective layer 270 to electrically connect the plurality of second semiconductor structures 220 .

The second connection electrode 230 may be made of at least one material selected from the group consisting of materials such as Cr, Al, Ti, Ni, Au, and alloys thereof, and may be formed of a single layer or a plurality of layers. .

Referring to FIG. 4E , the second protective layer 250 may be disposed on the plurality of second connection electrodes 230 . The second protective layer 250 may be formed by selecting at least one selected from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. However, the present invention is not limited thereto.

Referring to FIG. 4F , the second bonding electrode 260 may be disposed on the second passivation layer 250 . The second bonding electrode 260 may pass through the second protective layer 250 to be electrically connected to the second connection electrode 230 .

5A to 5C are diagrams for explaining a process of bonding a first semiconductor device and a second semiconductor device according to the present invention.

Referring to FIG. 5A , a plurality of first semiconductor devices 100 may be formed on a first substrate 110 , and a plurality of second semiconductor devices 200 may be disposed to face the first semiconductor device 100 . there is.

Referring to FIG. 5B , the second junction electrode 260 of the second semiconductor device 200 may be disposed on the first junction electrode 160 of the first semiconductor device 100 and bonded thereto. In this case, the bonding method of the first bonding electrode 160 and the second bonding electrode 260 is not limited. For example, the first bonding electrode 160 and the second bonding electrode 260 may be bonded by eutectic bonding, soldering, or a conductive adhesive. Thereafter, as shown in FIG. 5C , a plurality of semiconductor device packages may be separated ( S1 ).

6 is a conceptual diagram of a lamp according to an embodiment of the present invention.

The lamp according to the embodiment may include a light source 10 , a socket unit 1 , and a cap unit 2 . The light source 10 may include a semiconductor device package. The structure of the semiconductor device package may include all of the above-described structures.

According to an embodiment, the substrate 10 of the package may be manufactured in various shapes, and a semiconductor structure may be disposed on both sides of the substrate 10 to produce an effect similar to that of a filament light source.

A power line (not shown) is disposed inside the socket unit 1 to supply power to the semiconductor device package. The structure of the socket part 1 may include all the configurations of the socket part of a general incandescent light bulb.

The cap part 2 allows light emitted from the semiconductor device package located therein to be irradiated in all directions, so that a light distribution pattern identical to or very similar to that of the incandescent light bulb can be formed.

The semiconductor device may be used as a light source of a lighting system, or may be used as a light source of an image display device or a light source of a lighting device. That is, the semiconductor element may be applied to various electronic devices that are disposed in a case and provide light. For example, when a semiconductor device and RGB phosphor are mixed and used, white light having excellent color rendering properties (CRI) may be realized.

The above-described semiconductor device may be configured as a light emitting device package and may be used as a light source of a lighting system, for example, may be used as a light source of an image display device or a light source of a lighting device.

When used as a backlight unit of an image display device, it can be used as an edge-type backlight unit or as a direct-type backlight unit. may be

The light emitting device includes a laser diode in addition to the light emitting diode described above.

The laser diode may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above-described structure in the same manner as the light emitting device. In addition, an electro-luminescence phenomenon in which light is emitted when a current is passed after bonding a p-type first conductivity type semiconductor and an n-type second conductivity type semiconductor is used, but the directionality of the emitted light and there is a difference in phase. That is, the laser diode uses a phenomenon called stimulated emission and constructive interference, so that light having one specific wavelength (monochromatic beam) can be emitted with the same phase and in the same direction. Therefore, it can be used for optical communication, medical equipment, and semiconductor processing equipment.

As the light receiving element, a photodetector, which is a kind of transducer that detects light and converts its intensity into an electrical signal, may be exemplified. As such a photodetector, a photocell (silicon, selenium), a photoconductive element (cadmium sulfide, cadmium selenide), a photodiode (for example, a PD having a peak wavelength in a visible or true blind spectral region), a phototransistor , a photomultiplier tube, a phototube (vacuum, gas-filled), an IR (Infra-Red) detector, etc., but embodiments are not limited thereto.

In addition, a semiconductor device such as a photodetector may be generally manufactured using a direct bandgap semiconductor having excellent light conversion efficiency. Alternatively, the photodetectors have various structures, and the most common structures include a pin-type photodetector using a p-n junction, a Schottky-type photodetector using a Schottky junction, and a Metal Semiconductor Metal (MSM) photodetector. there is.

A photodiode may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above-described structure, in the same way as the light emitting device, and has a pn junction or pin structure. The photodiode operates by applying a reverse bias or zero bias, and when light is incident on the photodiode, electrons and holes are generated and a current flows. In this case, the magnitude of the current may be substantially proportional to the intensity of light incident on the photodiode.

A photovoltaic cell or solar cell is a type of photodiode, and may convert light into electric current. The solar cell may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above-described structure in the same manner as the light emitting device.

In addition, it may be used as a rectifier of an electronic circuit through the rectification characteristics of a general diode using a p-n junction, and may be applied to an oscillation circuit by being applied to a very high frequency circuit.

In addition, the above-described semiconductor device is not necessarily implemented only as a semiconductor, and may further include a metal material in some cases. For example, a semiconductor device such as a light-receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be formed using a p-type or n-type dopant. It may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

In the above, the embodiment has been mainly described, but this is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are not exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

Claims (10)

a first semiconductor device; and
a second semiconductor device disposed on the first semiconductor device;
The first semiconductor element,
a first substrate;
a plurality of first semiconductor structures disposed on the first substrate;
a first connection electrode electrically connecting the plurality of first semiconductor structures;
The second semiconductor element,
a second substrate spaced apart from the first substrate;
a plurality of second semiconductor structures disposed on one surface of the second substrate facing the first substrate;
a second connection electrode electrically connecting the plurality of second semiconductor structures;
The second connection electrode is disposed on the first connection electrode and is electrically connected,
The first semiconductor device includes a first insulating layer covering the plurality of first semiconductor structures, and a first reflective layer covering the first insulating layer,
The first connection electrode penetrates the first insulating layer and the first reflective layer to be electrically connected to the plurality of first semiconductor devices.
The method of claim 1,
The first semiconductor device includes a first pad and a second pad disposed on a first substrate,
The first connection electrode is electrically connected to the first pad and the second pad.
The method of claim 1,
The first semiconductor structure is
A first conductivity-type semiconductor layer disposed on the first substrate, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer,
The first connection electrode is a semiconductor device package for electrically connecting a first conductivity-type semiconductor layer of any one first semiconductor device and a second conductivity-type semiconductor layer of an adjacent first semiconductor device.
delete The method of claim 1,
The second semiconductor device includes a second insulating layer covering the plurality of second semiconductor structures, and a second reflective layer covering the second insulating layer,
The second connection electrode passes through the second insulating layer and the second reflective layer to be electrically connected to the plurality of second semiconductor devices.
3. The method of claim 2,
The first semiconductor device includes a first protective layer covering the first connection electrode, and
a first bonding electrode disposed on the first protective layer;
the first bonding electrode is electrically connected to the first connection electrode, and is in contact with the first pad and the second pad;
The second semiconductor device includes a second protective layer covering the second connection electrode, and a second bonding electrode disposed under the second protective layer,
The second junction electrode is electrically connected to the second connection electrode through the second passivation layer, and is bonded to the first junction electrode.
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