KR20170121243A - 금속 질화물의 선택적 제거를 위해 알킬 아민들을 사용하기 위한 방법들 및 장치 - Google Patents

금속 질화물의 선택적 제거를 위해 알킬 아민들을 사용하기 위한 방법들 및 장치 Download PDF

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KR20170121243A
KR20170121243A KR1020177026904A KR20177026904A KR20170121243A KR 20170121243 A KR20170121243 A KR 20170121243A KR 1020177026904 A KR1020177026904 A KR 1020177026904A KR 20177026904 A KR20177026904 A KR 20177026904A KR 20170121243 A KR20170121243 A KR 20170121243A
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South Korea
Prior art keywords
nitride layer
metal nitride
substrate
etching
reactor
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Korean (ko)
Inventor
비자이 반 샤르마
랑가 라오 아르네팔리
프레나 고라디아
로버트 잔 비저
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20170121243A publication Critical patent/KR20170121243A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H01L21/32135—
    • H01L21/02244—
    • H01L21/31144—
    • H01L21/32139—
    • H01L21/67109—
    • H01L21/6719—
    • H01L21/6838—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
KR1020177026904A 2015-02-25 2016-02-25 금속 질화물의 선택적 제거를 위해 알킬 아민들을 사용하기 위한 방법들 및 장치 Withdrawn KR20170121243A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN551DE2015 2015-02-25
IN551/DEL/2015 2015-02-25
PCT/US2016/019484 WO2016138218A1 (en) 2015-02-25 2016-02-25 Methods and apparatus for using alkyl amines for the selective removal of metal nitride

Publications (1)

Publication Number Publication Date
KR20170121243A true KR20170121243A (ko) 2017-11-01

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KR1020177026904A Withdrawn KR20170121243A (ko) 2015-02-25 2016-02-25 금속 질화물의 선택적 제거를 위해 알킬 아민들을 사용하기 위한 방법들 및 장치

Country Status (6)

Country Link
US (1) US20180033643A1 (https=)
JP (1) JP2018511935A (https=)
KR (1) KR20170121243A (https=)
CN (1) CN107258010A (https=)
TW (1) TW201703130A (https=)
WO (1) WO2016138218A1 (https=)

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US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
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Publication number Publication date
JP2018511935A (ja) 2018-04-26
US20180033643A1 (en) 2018-02-01
WO2016138218A1 (en) 2016-09-01
CN107258010A (zh) 2017-10-17
TW201703130A (zh) 2017-01-16
WO2016138218A8 (en) 2017-03-16

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