TW201703130A - 使用烷基胺於金屬氮化物之選擇性移除的方法及設備 - Google Patents

使用烷基胺於金屬氮化物之選擇性移除的方法及設備 Download PDF

Info

Publication number
TW201703130A
TW201703130A TW105105685A TW105105685A TW201703130A TW 201703130 A TW201703130 A TW 201703130A TW 105105685 A TW105105685 A TW 105105685A TW 105105685 A TW105105685 A TW 105105685A TW 201703130 A TW201703130 A TW 201703130A
Authority
TW
Taiwan
Prior art keywords
nitride layer
reactor
metal
metal nitride
layer
Prior art date
Application number
TW105105685A
Other languages
English (en)
Chinese (zh)
Inventor
夏爾馬維賈伊班
阿奈巴里蘭卡拉歐
葛拉迪亞皮耶納
維瑟爾羅伯特詹
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201703130A publication Critical patent/TW201703130A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
TW105105685A 2015-02-25 2016-02-25 使用烷基胺於金屬氮化物之選擇性移除的方法及設備 TW201703130A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IN551DE2015 2015-02-25

Publications (1)

Publication Number Publication Date
TW201703130A true TW201703130A (zh) 2017-01-16

Family

ID=56789186

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105105685A TW201703130A (zh) 2015-02-25 2016-02-25 使用烷基胺於金屬氮化物之選擇性移除的方法及設備

Country Status (6)

Country Link
US (1) US20180033643A1 (https=)
JP (1) JP2018511935A (https=)
KR (1) KR20170121243A (https=)
CN (1) CN107258010A (https=)
TW (1) TW201703130A (https=)
WO (1) WO2016138218A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI803479B (zh) * 2017-03-01 2023-06-01 美商應用材料股份有限公司 金屬氮化物膜的選擇性蝕刻

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10043684B1 (en) * 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11984325B2 (en) * 2021-07-12 2024-05-14 Applied Materials, Inc. Selective removal of transition metal nitride materials

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283362A (ja) * 1992-04-03 1993-10-29 Sony Corp 多層配線の形成方法
JP3179212B2 (ja) * 1992-10-27 2001-06-25 日本電気株式会社 半導体装置の製造方法
US6849471B2 (en) * 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
JPH11163138A (ja) * 1997-11-28 1999-06-18 Sony Corp 半導体装置の製造方法
US6358788B1 (en) * 1999-08-30 2002-03-19 Micron Technology, Inc. Method of fabricating a wordline in a memory array of a semiconductor device
JP4686006B2 (ja) * 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP2005067164A (ja) * 2003-08-28 2005-03-17 Sony Corp 液体吐出ヘッド、液体吐出装置及び液体吐出ヘッドの製造方法
US20060016783A1 (en) * 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
JP3889023B2 (ja) * 2005-08-05 2007-03-07 シャープ株式会社 可変抵抗素子とその製造方法並びにそれを備えた記憶装置
US20070117396A1 (en) * 2005-11-22 2007-05-24 Dingjun Wu Selective etching of titanium nitride with xenon difluoride
US8810000B2 (en) * 2008-01-22 2014-08-19 Renesas Electronics Corporation Semiconductor device comprising capacitive element
JP5042162B2 (ja) * 2008-08-12 2012-10-03 株式会社日立ハイテクノロジーズ 半導体加工方法
JP5590113B2 (ja) * 2010-03-02 2014-09-17 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法
JP5434970B2 (ja) * 2010-07-12 2014-03-05 セントラル硝子株式会社 ドライエッチング剤
WO2012048079A2 (en) * 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides
SG11201403556WA (en) * 2011-12-28 2014-07-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
JP6579953B2 (ja) * 2012-07-16 2019-09-25 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 純還元性プラズマ中で高アスペクト比のフォトレジストを除去する方法
US8987133B2 (en) * 2013-01-15 2015-03-24 International Business Machines Corporation Titanium oxynitride hard mask for lithographic patterning
JP2014154866A (ja) * 2013-02-14 2014-08-25 Fujifilm Corp ドライエッチング装置及びドライエッチング装置用のクランプ
JP6336866B2 (ja) * 2013-10-23 2018-06-06 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
US9543157B2 (en) * 2014-09-30 2017-01-10 Infineon Technologies Ag Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer
JP6523091B2 (ja) * 2015-07-24 2019-05-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6462602B2 (ja) * 2016-01-12 2019-01-30 信越化学工業株式会社 多層膜形成方法及びパターン形成方法
US10522467B2 (en) * 2016-07-06 2019-12-31 Tokyo Electron Limited Ruthenium wiring and manufacturing method thereof
US9941142B1 (en) * 2017-01-12 2018-04-10 International Business Machines Corporation Tunable TiOxNy hardmask for multilayer patterning
US10014185B1 (en) * 2017-03-01 2018-07-03 Applied Materials, Inc. Selective etch of metal nitride films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI803479B (zh) * 2017-03-01 2023-06-01 美商應用材料股份有限公司 金屬氮化物膜的選擇性蝕刻

Also Published As

Publication number Publication date
JP2018511935A (ja) 2018-04-26
KR20170121243A (ko) 2017-11-01
US20180033643A1 (en) 2018-02-01
WO2016138218A1 (en) 2016-09-01
CN107258010A (zh) 2017-10-17
WO2016138218A8 (en) 2017-03-16

Similar Documents

Publication Publication Date Title
TW201703130A (zh) 使用烷基胺於金屬氮化物之選擇性移除的方法及設備
JP7184810B2 (ja) 基板に堆積された膜の品質改善
JP2018511935A5 (https=)
KR102206927B1 (ko) 금속을 함유하는 화합물들을 에칭하기 위한 다단계 방법 및 장치
TWI830277B (zh) 製造熱穩定之低介電常數鰭式場效電晶體間隔物之方法
KR102360672B1 (ko) 무수 식각 방법들
US9997373B2 (en) Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US10297459B2 (en) Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9543158B2 (en) Technique to deposit sidewall passivation for high aspect ratio cylinder etch
CN101903984B (zh) 利用等离子体清洁处理形成钝化层以降低自然氧化物生长的方法
KR101368768B1 (ko) 성막 방법, 성막 장치 및 기억 매체
TWI440089B (zh) 基板處理方法及基板處理裝置
US8216861B1 (en) Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition
WO2018222771A1 (en) Dry stripping of boron carbide hardmask
CN112334597B (zh) 硅氧烷组合物和使用该组合物沉积含硅膜的方法
WO2018026867A1 (en) Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US20170125241A1 (en) Low temp single precursor arc hard mask for multilayer patterning application
KR20170132671A (ko) 고 종횡비 실린더 에칭에 대한 측벽 패시베이션을 증착하기 위한 기법
TWI869676B (zh) 金屬氧化物滲入光阻劑中之方法及半導體處理系統
US20240234162A9 (en) Substrate-processing method and substrate-processing apparatus
US10818490B2 (en) Controlled growth of thin silicon oxide film at low temperature
TWI306275B (https=)
JP7580386B2 (ja) 熱酸化品質が高い厚い酸化膜を低温で成長させる方法
JP5138291B2 (ja) アモルファスカーボン膜の後処理方法およびそれを用いた半導体装置の製造方法
WO2025182824A1 (ja) 基板処理方法及び基板処理装置