CN107258010A - 使用烷基胺的选择性移除金属氮化物的方法及设备 - Google Patents

使用烷基胺的选择性移除金属氮化物的方法及设备 Download PDF

Info

Publication number
CN107258010A
CN107258010A CN201680010536.9A CN201680010536A CN107258010A CN 107258010 A CN107258010 A CN 107258010A CN 201680010536 A CN201680010536 A CN 201680010536A CN 107258010 A CN107258010 A CN 107258010A
Authority
CN
China
Prior art keywords
reactor
nitride layer
metal nitride
metal
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680010536.9A
Other languages
English (en)
Chinese (zh)
Inventor
维杰·班·夏尔马
兰加·拉奥·阿内帕利
普莉娜·古拉迪雅
罗伯特·简·维瑟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN107258010A publication Critical patent/CN107258010A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
CN201680010536.9A 2015-02-25 2016-02-25 使用烷基胺的选择性移除金属氮化物的方法及设备 Pending CN107258010A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN551DE2015 2015-02-25
IN551/DEL/2015 2015-02-25
PCT/US2016/019484 WO2016138218A1 (en) 2015-02-25 2016-02-25 Methods and apparatus for using alkyl amines for the selective removal of metal nitride

Publications (1)

Publication Number Publication Date
CN107258010A true CN107258010A (zh) 2017-10-17

Family

ID=56789186

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680010536.9A Pending CN107258010A (zh) 2015-02-25 2016-02-25 使用烷基胺的选择性移除金属氮化物的方法及设备

Country Status (6)

Country Link
US (1) US20180033643A1 (https=)
JP (1) JP2018511935A (https=)
KR (1) KR20170121243A (https=)
CN (1) CN107258010A (https=)
TW (1) TW201703130A (https=)
WO (1) WO2016138218A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10043684B1 (en) * 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10014185B1 (en) * 2017-03-01 2018-07-03 Applied Materials, Inc. Selective etch of metal nitride films
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11984325B2 (en) * 2021-07-12 2024-05-14 Applied Materials, Inc. Selective removal of transition metal nitride materials

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5312773A (en) * 1992-04-03 1994-05-17 Sony Corporation Method of forming multilayer interconnection structure
US20100085142A1 (en) * 2005-08-05 2010-04-08 Yasunari Hosoi Variable resistor element, manufacturing method thereof, and memory device provided with it
CN103154321A (zh) * 2010-10-06 2013-06-12 高级技术材料公司 选择性蚀刻金属氮化物的组合物及方法
US20140199832A1 (en) * 2013-01-15 2014-07-17 International Business Machines Corporation Titanium oxynitride hard mask for lithographic patterning
CN104145324A (zh) * 2011-12-28 2014-11-12 高级技术材料公司 用于选择性蚀刻氮化钛的组合物和方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3179212B2 (ja) * 1992-10-27 2001-06-25 日本電気株式会社 半導体装置の製造方法
US6849471B2 (en) * 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
JPH11163138A (ja) * 1997-11-28 1999-06-18 Sony Corp 半導体装置の製造方法
US6358788B1 (en) * 1999-08-30 2002-03-19 Micron Technology, Inc. Method of fabricating a wordline in a memory array of a semiconductor device
JP4686006B2 (ja) * 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP2005067164A (ja) * 2003-08-28 2005-03-17 Sony Corp 液体吐出ヘッド、液体吐出装置及び液体吐出ヘッドの製造方法
US20060016783A1 (en) * 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US20070117396A1 (en) * 2005-11-22 2007-05-24 Dingjun Wu Selective etching of titanium nitride with xenon difluoride
US8810000B2 (en) * 2008-01-22 2014-08-19 Renesas Electronics Corporation Semiconductor device comprising capacitive element
JP5042162B2 (ja) * 2008-08-12 2012-10-03 株式会社日立ハイテクノロジーズ 半導体加工方法
JP5590113B2 (ja) * 2010-03-02 2014-09-17 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法
JP5434970B2 (ja) * 2010-07-12 2014-03-05 セントラル硝子株式会社 ドライエッチング剤
JP6579953B2 (ja) * 2012-07-16 2019-09-25 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 純還元性プラズマ中で高アスペクト比のフォトレジストを除去する方法
JP2014154866A (ja) * 2013-02-14 2014-08-25 Fujifilm Corp ドライエッチング装置及びドライエッチング装置用のクランプ
JP6336866B2 (ja) * 2013-10-23 2018-06-06 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
US9543157B2 (en) * 2014-09-30 2017-01-10 Infineon Technologies Ag Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer
JP6523091B2 (ja) * 2015-07-24 2019-05-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6462602B2 (ja) * 2016-01-12 2019-01-30 信越化学工業株式会社 多層膜形成方法及びパターン形成方法
US10522467B2 (en) * 2016-07-06 2019-12-31 Tokyo Electron Limited Ruthenium wiring and manufacturing method thereof
US9941142B1 (en) * 2017-01-12 2018-04-10 International Business Machines Corporation Tunable TiOxNy hardmask for multilayer patterning
US10014185B1 (en) * 2017-03-01 2018-07-03 Applied Materials, Inc. Selective etch of metal nitride films

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5312773A (en) * 1992-04-03 1994-05-17 Sony Corporation Method of forming multilayer interconnection structure
US20100085142A1 (en) * 2005-08-05 2010-04-08 Yasunari Hosoi Variable resistor element, manufacturing method thereof, and memory device provided with it
CN103154321A (zh) * 2010-10-06 2013-06-12 高级技术材料公司 选择性蚀刻金属氮化物的组合物及方法
CN104145324A (zh) * 2011-12-28 2014-11-12 高级技术材料公司 用于选择性蚀刻氮化钛的组合物和方法
US20140199832A1 (en) * 2013-01-15 2014-07-17 International Business Machines Corporation Titanium oxynitride hard mask for lithographic patterning

Also Published As

Publication number Publication date
JP2018511935A (ja) 2018-04-26
KR20170121243A (ko) 2017-11-01
US20180033643A1 (en) 2018-02-01
WO2016138218A1 (en) 2016-09-01
TW201703130A (zh) 2017-01-16
WO2016138218A8 (en) 2017-03-16

Similar Documents

Publication Publication Date Title
CN107258010A (zh) 使用烷基胺的选择性移除金属氮化物的方法及设备
KR102206927B1 (ko) 금속을 함유하는 화합물들을 에칭하기 위한 다단계 방법 및 장치
JP7184810B6 (ja) 基板に堆積された膜の品質改善
TWI618187B (zh) 藉由使用遠端電漿ｐｅｃｖｄ之ｆｃｖｄ硬體形成之可流動碳膜
JP2018511935A5 (https=)
TWI645469B (zh) 使用氣體分配板熱之溫度躍升
US10297459B2 (en) Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9997372B2 (en) Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US10373840B2 (en) Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US20160343580A1 (en) Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US8951913B2 (en) Method for removing native oxide and associated residue from a substrate
JP4978355B2 (ja) 成膜装置及びそのコーティング方法
CN114975176A (zh) 用于自组装单层工艺的化学输送腔室
CN105405760A (zh) 用于自对准触点方案的牺牲金属前电介质
CN112334597B (zh) 硅氧烷组合物和使用该组合物沉积含硅膜的方法
KR20200010411A (ko) 에칭 방법
CN105745740A (zh) 用于稳定蚀刻后界面以使下一处理步骤之前的队列时间问题最小化的方法
WO2018026867A1 (en) Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US11814726B2 (en) Dry etching method or dry cleaning method
US20250188600A1 (en) Sidewall passivation using aldehyde or isocyanate chemistry for high aspect ratio etch
US20170125241A1 (en) Low temp single precursor arc hard mask for multilayer patterning application
KR20170132671A (ko) 고 종횡비 실린더 에칭에 대한 측벽 패시베이션을 증착하기 위한 기법
US20240234162A9 (en) Substrate-processing method and substrate-processing apparatus
US10818490B2 (en) Controlled growth of thin silicon oxide film at low temperature
WO2025182824A1 (ja) 基板処理方法及び基板処理装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20171017

WD01 Invention patent application deemed withdrawn after publication