KR20160114709A - 폴리（아미노산）을 포함하는 화학 기계적 연마（ｃｍｐ） 조성물 - Google Patents

폴리（아미노산）을 포함하는 화학 기계적 연마（ｃｍｐ） 조성물 Download PDF

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Publication number
KR20160114709A
KR20160114709A KR1020167023956A KR20167023956A KR20160114709A KR 20160114709 A KR20160114709 A KR 20160114709A KR 1020167023956 A KR1020167023956 A KR 1020167023956A KR 20167023956 A KR20167023956 A KR 20167023956A KR 20160114709 A KR20160114709 A KR 20160114709A
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KR
South Korea
Prior art keywords
poly
cmp
weight
particles
cmp composition
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KR1020167023956A
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English (en)
Korean (ko)
Inventor
미하엘 라우터
롤란트 랑게
바슈티안 마르텐 놀러
막스 지베르트
Original Assignee
바스프 에스이
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Application filed by 바스프 에스이 filed Critical 바스프 에스이
Publication of KR20160114709A publication Critical patent/KR20160114709A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H01L21/31053—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020167023956A 2014-01-31 2015-01-21 폴리（아미노산）을 포함하는 화학 기계적 연마（ｃｍｐ） 조성물 Withdrawn KR20160114709A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14153454.5 2014-01-31
EP14153454 2014-01-31
PCT/IB2015/050454 WO2015114489A1 (en) 2014-01-31 2015-01-21 A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)

Publications (1)

Publication Number Publication Date
KR20160114709A true KR20160114709A (ko) 2016-10-05

Family

ID=50030116

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167023956A Withdrawn KR20160114709A (ko) 2014-01-31 2015-01-21 폴리（아미노산）을 포함하는 화학 기계적 연마（ｃｍｐ） 조성물

Country Status (9)

Country Link
US (1) US20170166778A1 (https=)
EP (1) EP3099756A4 (https=)
JP (1) JP2017508833A (https=)
KR (1) KR20160114709A (https=)
CN (1) CN105934487B (https=)
IL (1) IL246916A0 (https=)
SG (1) SG11201606157VA (https=)
TW (1) TW201538700A (https=)
WO (1) WO2015114489A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230116363A (ko) * 2022-01-28 2023-08-04 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법

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JP6627283B2 (ja) * 2015-06-30 2020-01-08 日立化成株式会社 研磨液及び研磨方法
EP3433327B1 (en) * 2016-03-22 2020-05-20 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates
JP6957265B2 (ja) * 2016-09-29 2021-11-02 花王株式会社 研磨液組成物
TWI723284B (zh) * 2017-09-15 2021-04-01 美商Ｃｍｃ材料股份有限公司 鎢化學機械拋光(cmp)之組合物
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
JP7045171B2 (ja) * 2017-11-28 2022-03-31 花王株式会社 研磨液組成物
CN109971357B (zh) * 2017-12-27 2021-12-07 安集微电子（上海）有限公司 一种化学机械抛光液
CN108913038A (zh) * 2018-06-27 2018-11-30 东莞市金林自动化机械科技有限公司 一种用于金的抛光液及其制备方法
KR20220090534A (ko) * 2019-10-22 2022-06-29 씨엠씨 머티리얼즈, 인코포레이티드 유전체 cmp를 위한 조성물 및 방법
TWI764338B (zh) * 2019-10-22 2022-05-11 美商Ｃｍｃ材料股份有限公司 用於氧化矽和碳摻雜之氧化矽化學機械拋光的組合物及方法
EP4087904B1 (en) * 2020-01-07 2026-01-28 CMC Materials LLC Derivatized polyamino acids

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US6319096B1 (en) * 1999-11-15 2001-11-20 Cabot Corporation Composition and method for planarizing surfaces
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
US7279119B2 (en) * 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
US20030211747A1 (en) * 2001-09-13 2003-11-13 Nyacol Nano Technologies, Inc Shallow trench isolation polishing using mixed abrasive slurries
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KR100637772B1 (ko) * 2004-06-25 2006-10-23 제일모직주식회사 반도체 ｓｔｉ 공정용 고선택비 ｃｍｐ 슬러리 조성물
KR100548132B1 (ko) * 2004-07-02 2006-02-02 삼성전자주식회사 멀티밴드-호핑 통신시스템에서 수신기의 ｄｃ 오프셋보정장치 및 방법
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JPWO2009119485A1 (ja) * 2008-03-28 2011-07-21 日立化成工業株式会社 金属用研磨液及びこの研磨液を用いた研磨方法
CN102766407B (zh) * 2008-04-23 2016-04-27 日立化成株式会社 研磨剂及使用该研磨剂的基板研磨方法
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CN102268224B (zh) * 2010-06-01 2013-12-04 中国科学院上海微系统与信息技术研究所 可控氧化硅去除速率的化学机械抛光液
MY170196A (en) * 2010-09-08 2019-07-09 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices
JP2012146975A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
CN103764775B (zh) * 2011-09-07 2016-05-18 巴斯夫欧洲公司 包含苷的化学机械抛光(cmp)组合物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230116363A (ko) * 2022-01-28 2023-08-04 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
US12540256B2 (en) 2022-01-28 2026-02-03 Samsung Sdi Co., Ltd. CMP slurry composition for polishing copper and copper film polishing method using the same

Also Published As

Publication number Publication date
JP2017508833A (ja) 2017-03-30
CN105934487B (zh) 2018-10-26
EP3099756A4 (en) 2017-08-02
WO2015114489A1 (en) 2015-08-06
IL246916A0 (en) 2016-09-29
CN105934487A (zh) 2016-09-07
SG11201606157VA (en) 2016-08-30
US20170166778A1 (en) 2017-06-15
EP3099756A1 (en) 2016-12-07
TW201538700A (zh) 2015-10-16

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