KR20160041053A - 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들 - Google Patents

웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들 Download PDF

Info

Publication number
KR20160041053A
KR20160041053A KR1020167008061A KR20167008061A KR20160041053A KR 20160041053 A KR20160041053 A KR 20160041053A KR 1020167008061 A KR1020167008061 A KR 1020167008061A KR 20167008061 A KR20167008061 A KR 20167008061A KR 20160041053 A KR20160041053 A KR 20160041053A
Authority
KR
South Korea
Prior art keywords
wafer
measurements
wafers
patterning
sampling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020167008061A
Other languages
English (en)
Korean (ko)
Inventor
파벨 이직슨
존 로빈슨
마이크 아델
아미르 위드만
동섭 최
아나트 마르첼리
Original Assignee
케이엘에이-텐코어 코오포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이-텐코어 코오포레이션 filed Critical 케이엘에이-텐코어 코오포레이션
Publication of KR20160041053A publication Critical patent/KR20160041053A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00Testing or monitoring of control systems or parts thereof
    • G05B23/02Electric testing or monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B21/00Systems involving sampling of the variable controlled
    • G05B21/02Systems involving sampling of the variable controlled electric
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67288Monitoring of warpage, curvature, damage, defects or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • General Factory Administration (AREA)
  • Testing And Monitoring For Control Systems (AREA)
KR1020167008061A 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들 Ceased KR20160041053A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US91343507P 2007-04-23 2007-04-23
US60/913,435 2007-04-23
US12/107,346 2008-04-22
US12/107,346 US8175831B2 (en) 2007-04-23 2008-04-22 Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers
PCT/US2008/061299 WO2008131422A1 (en) 2007-04-23 2008-04-23 Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147035320A Division KR101608479B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들

Publications (1)

Publication Number Publication Date
KR20160041053A true KR20160041053A (ko) 2016-04-15

Family

ID=39577932

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1020147010643A Active KR101531974B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020147010642A Active KR101531992B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020097024367A Active KR101448970B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020147035320A Active KR101608479B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020167008061A Ceased KR20160041053A (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들

Family Applications Before (4)

Application Number Title Priority Date Filing Date
KR1020147010643A Active KR101531974B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020147010642A Active KR101531992B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020097024367A Active KR101448970B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020147035320A Active KR101608479B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들

Country Status (4)

Country Link
US (3) US8175831B2 (enExample)
JP (3) JP5425760B2 (enExample)
KR (5) KR101531974B1 (enExample)
WO (1) WO2008131422A1 (enExample)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5634864B2 (ja) 2007-05-30 2014-12-03 ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation リソグラフィック・プロセスに於ける、プロセス制御方法およびプロセス制御装置
US8188447B2 (en) * 2009-01-26 2012-05-29 Taiwan Semiconductor Manufacturing Co., Ltd. Field-by-field laser annealing and feed forward process control
JP5420942B2 (ja) * 2009-03-19 2014-02-19 大日本スクリーン製造株式会社 パターン描画装置およびパターン描画方法
US8392009B2 (en) * 2009-03-31 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced process control with novel sampling policy
US9075106B2 (en) * 2009-07-30 2015-07-07 International Business Machines Corporation Detecting chip alterations with light emission
US9014827B2 (en) * 2010-01-14 2015-04-21 International Business Machines Corporation Dynamically generating a manufacturing production work flow with selectable sampling strategies
EP2535923B1 (en) * 2010-02-08 2020-06-17 Nikon Corporation Detection method and detection device
US9620426B2 (en) 2010-02-18 2017-04-11 Kla-Tencor Corporation Method and system for providing process tool correctables using an optimized sampling scheme with smart interpolation
US9625823B1 (en) * 2010-06-17 2017-04-18 Kla-Tencor Corporation Calculation method for local film stress measurements using local film thickness values
US9052709B2 (en) * 2010-07-30 2015-06-09 Kla-Tencor Corporation Method and system for providing process tool correctables
CA2713422A1 (en) * 2010-09-09 2010-11-16 Ibm Canada Limited - Ibm Canada Limitee Characterizing laminate shape
US9606453B2 (en) * 2010-09-30 2017-03-28 Kla-Tencor Corporation Method and system for providing tool induced shift using a sub-sampling scheme
KR101720152B1 (ko) * 2010-10-25 2017-03-27 삼성전자 주식회사 계측 방법 및 이를 이용한 계측 시스템
US8656323B2 (en) * 2011-02-22 2014-02-18 Kla-Tencor Corporation Based device risk assessment
KR101943593B1 (ko) 2011-04-06 2019-01-30 케이엘에이-텐코 코포레이션 공정 제어를 개선하기 위한 품질 메트릭 제공 방법 및 시스템
US8572518B2 (en) 2011-06-23 2013-10-29 Nikon Precision Inc. Predicting pattern critical dimensions in a lithographic exposure process
US10295329B2 (en) * 2011-08-01 2019-05-21 Nova Measuring Instruments Ltd. Monitoring system and method for verifying measurements in patterned structures
US9354526B2 (en) * 2011-10-11 2016-05-31 Kla-Tencor Corporation Overlay and semiconductor process control using a wafer geometry metric
US9652729B2 (en) * 2011-10-27 2017-05-16 International Business Machines Corporation Metrology management
NL2009853A (en) 2011-12-23 2013-06-26 Asml Netherlands Bv Methods and apparatus for measuring a property of a substrate.
US20130262192A1 (en) * 2012-03-29 2013-10-03 ATC Logistics & Electronics System and method for receiving quality issue log
US8871605B2 (en) 2012-04-18 2014-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for fabricating and orienting semiconductor wafers
US8843875B2 (en) * 2012-05-08 2014-09-23 Kla-Tencor Corporation Measurement model optimization based on parameter variations across a wafer
US9588441B2 (en) 2012-05-18 2017-03-07 Kla-Tencor Corporation Method and device for using substrate geometry to determine optimum substrate analysis sampling
US9430593B2 (en) 2012-10-11 2016-08-30 Kla-Tencor Corporation System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
US8889434B2 (en) * 2012-12-17 2014-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Scanner overlay correction system and method
US9442392B2 (en) 2012-12-17 2016-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Scanner overlay correction system and method
JP6004956B2 (ja) * 2013-01-29 2016-10-12 株式会社日立ハイテクノロジーズ パターン評価装置、及び、パターン評価装置を備えた外観検査装置
US9442391B2 (en) * 2013-03-12 2016-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Overlay sampling methodology
US9098891B2 (en) 2013-04-08 2015-08-04 Kla-Tencor Corp. Adaptive sampling for semiconductor inspection recipe creation, defect review, and metrology
US9029810B2 (en) * 2013-05-29 2015-05-12 Kla-Tencor Corporation Using wafer geometry to improve scanner correction effectiveness for overlay control
US10429320B2 (en) * 2013-06-04 2019-10-01 Kla-Tencor Corporation Method for auto-learning tool matching
WO2014210384A1 (en) * 2013-06-28 2014-12-31 Kla-Tencor Corporation Selection and use of representative target subsets
US9053284B2 (en) 2013-09-04 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for overlay control
NL2013417A (en) 2013-10-02 2015-04-07 Asml Netherlands Bv Methods & apparatus for obtaining diagnostic information relating to an industrial process.
US10401279B2 (en) * 2013-10-29 2019-09-03 Kla-Tencor Corporation Process-induced distortion prediction and feedforward and feedback correction of overlay errors
US9245768B2 (en) * 2013-12-17 2016-01-26 Applied Materials, Inc. Method of improving substrate uniformity during rapid thermal processing
KR101860042B1 (ko) * 2013-12-30 2018-05-21 에이에스엠엘 네델란즈 비.브이. 메트롤로지 타겟의 디자인을 위한 장치 및 방법
JP2015134393A (ja) * 2014-01-17 2015-07-27 株式会社荏原製作所 キャリブレーション装置、及び基板処理装置
US10466596B2 (en) * 2014-02-21 2019-11-05 Kla-Tencor Corporation System and method for field-by-field overlay process control using measured and estimated field parameters
TWI560747B (en) * 2014-04-02 2016-12-01 Macromix Internat Co Ltd Method of manufacturing semiconductor and exposure system
JP6191534B2 (ja) * 2014-05-01 2017-09-06 信越半導体株式会社 ウエハのそりの評価方法及びウエハの選別方法
US10712289B2 (en) * 2014-07-29 2020-07-14 Kla-Tencor Corp. Inspection for multiple process steps in a single inspection process
US10133263B1 (en) 2014-08-18 2018-11-20 Kla-Tencor Corporation Process condition based dynamic defect inspection
US10509329B2 (en) 2014-09-03 2019-12-17 Kla-Tencor Corporation Breakdown analysis of geometry induced overlay and utilization of breakdown analysis for improved overlay control
WO2016037003A1 (en) 2014-09-03 2016-03-10 Kla-Tencor Corporation Optimizing the utilization of metrology tools
US9286675B1 (en) 2014-10-23 2016-03-15 Applied Materials Israel Ltd. Iterative defect filtering process
US10078272B2 (en) 2014-12-02 2018-09-18 Asml Netherlands B.V. Lithographic method and apparatus
WO2016087388A1 (en) 2014-12-02 2016-06-09 Asml Netherlands B.V. Lithographic method and apparatus
US10402763B2 (en) * 2014-12-11 2019-09-03 Lenovo Enterprise Solutions (Singapore) Pte. Ltd Total manufacturing planning management control system
US10024654B2 (en) * 2015-04-06 2018-07-17 Kla-Tencor Corporation Method and system for determining in-plane distortions in a substrate
WO2016162231A1 (en) 2015-04-10 2016-10-13 Asml Netherlands B.V. Method and apparatus for inspection and metrology
US10754260B2 (en) 2015-06-18 2020-08-25 Kla-Tencor Corporation Method and system for process control with flexible sampling
US10295979B2 (en) * 2015-09-15 2019-05-21 Applied Materials, Inc. Scheduling in manufacturing environments
KR102351636B1 (ko) * 2015-09-21 2022-01-13 케이엘에이 코포레이션 유연적 샘플링을 이용한 공정 제어 방법 및 시스템
WO2017050523A1 (en) 2015-09-24 2017-03-30 Asml Netherlands B.V. Method of reducing effects of reticle heating and/or cooling in a lithographic process
JP6489999B2 (ja) 2015-11-19 2019-03-27 東芝メモリ株式会社 位置合わせ方法およびパターン形成システム
WO2017114662A1 (en) 2015-12-31 2017-07-06 Asml Netherlands B.V. Selection of measurement locations for patterning processes
US10061211B2 (en) * 2016-02-17 2018-08-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for layoutless overlay control
JP6630839B2 (ja) * 2016-02-18 2020-01-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置、デバイス製造方法ならびに関連データ処理装置およびコンピュータプログラム製品
CN109863457A (zh) * 2016-08-24 2019-06-07 株式会社尼康 测量系统及基板处理系统、以及元件制造方法
KR20250133450A (ko) * 2016-09-30 2025-09-05 가부시키가이샤 니콘 계측 시스템 및 기판 처리 시스템, 그리고 디바이스 제조 방법
US10190991B2 (en) 2016-11-03 2019-01-29 Applied Materials Israel Ltd. Method for adaptive sampling in examining an object and system thereof
US10281827B2 (en) * 2016-12-15 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd Noise reduction for overlay control
CN114690591B (zh) * 2016-12-23 2025-08-12 Asml荷兰有限公司 计算机程序产品和形貌确定方法
EP3376287A1 (en) 2017-03-14 2018-09-19 ASML Netherlands B.V. Methods of determining corrections for a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus
CN110622068B (zh) * 2017-04-14 2022-01-11 Asml荷兰有限公司 测量方法
EP3428725A1 (en) * 2017-07-13 2019-01-16 ASML Netherlands B.V. Inspection tool, lithographic apparatus, lithographic system, inspection method and device manufacturing method
EP3444674A1 (en) 2017-08-14 2019-02-20 ASML Netherlands B.V. Method and apparatus to determine a patterning process parameter
US10699969B2 (en) * 2017-08-30 2020-06-30 Kla-Tencor Corporation Quick adjustment of metrology measurement parameters according to process variation
US10310959B2 (en) 2017-11-07 2019-06-04 Bank Of America Corporation Pre-deployment validation system using intelligent databases
KR102582989B1 (ko) 2018-01-24 2023-09-25 에이에스엠엘 네델란즈 비.브이. 컴퓨테이션 계측법 기반 샘플링 스킴
US10553501B2 (en) * 2018-03-28 2020-02-04 Canon Kabushiki Kaisha Apparatus for use in forming an adaptive layer and a method of using the same
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology
US11164768B2 (en) * 2018-04-27 2021-11-02 Kla Corporation Process-induced displacement characterization during semiconductor production
KR102631111B1 (ko) * 2018-07-30 2024-01-29 케이엘에이 코포레이션 디바이스 오버레이 에러 감소 방법
KR20250073492A (ko) * 2018-11-07 2025-05-27 에이에스엠엘 네델란즈 비.브이. 공정에 대한 보정 결정
US11011435B2 (en) * 2018-11-20 2021-05-18 Asm Technology Singapore Pte Ltd Apparatus and method inspecting bonded semiconductor dice
KR20240152949A (ko) * 2018-12-19 2024-10-22 에이에스엠엘 네델란즈 비.브이. 샘플 스킴 생성 및 최적화 방법
CN111477562B (zh) * 2019-01-24 2023-11-21 台湾积体电路制造股份有限公司 用于半导体制造的晶片质量监控方法
JP7153147B2 (ja) * 2019-02-22 2022-10-13 ケーエルエー コーポレイション 半導体デバイスの位置ずれ測定方法及び装置
WO2020185242A1 (en) * 2019-03-08 2020-09-17 Kla-Tencor Corporation Dynamic amelioration of misregistration measurement
US11551980B2 (en) 2019-03-08 2023-01-10 Kla-Tencor Corporation Dynamic amelioration of misregistration measurement
JP7394205B2 (ja) * 2019-07-05 2023-12-07 ケーエルエー コーポレイション 動的標本化プラン、最適化ウェハ計測経路及び最適化ウェハ輸送を伴い量子情報処理を用いるファブ管理
JP7329386B2 (ja) * 2019-08-09 2023-08-18 コニアク ゲーエムベーハー リソグラフィ処理される半導体デバイスのためのプロセス制御方法
US12197133B2 (en) * 2019-10-08 2025-01-14 International Business Machines Corporation Tool control using multistage LSTM for predicting on-wafer measurements
US11429091B2 (en) 2020-10-29 2022-08-30 Kla Corporation Method of manufacturing a semiconductor device and process control system for a semiconductor manufacturing assembly
TWI755248B (zh) * 2021-01-07 2022-02-11 鴻海精密工業股份有限公司 晶圓盒內晶圓擺放狀態的檢測方法及檢測系統
US20230030116A1 (en) * 2021-07-28 2023-02-02 Kla Corporation System and method for optimizing through silicon via overlay
US20240038558A1 (en) * 2022-07-26 2024-02-01 Kla Corporation Metrology sampling plans for only out of specification detection
US20250132180A1 (en) * 2023-10-24 2025-04-24 Tokyo Electron Limited Wafer bow metrology system

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4750141A (en) * 1985-11-26 1988-06-07 Ade Corporation Method and apparatus for separating fixture-induced error from measured object characteristics and for compensating the measured object characteristic with the error, and a bow/warp station implementing same
US5134303A (en) * 1990-08-14 1992-07-28 Flexus, Inc. Laser apparatus and method for measuring stress in a thin film using multiple wavelengths
US5248889A (en) * 1990-08-14 1993-09-28 Tencor Instruments, Inc. Laser apparatus and method for measuring stress in a thin film using multiple wavelengths
JPH06318560A (ja) 1993-05-07 1994-11-15 Nec Corp サーマウェーブ測定方法
US5586059A (en) 1995-06-07 1996-12-17 Advanced Micro Devices, Inc. Automated data management system for analysis and control of photolithography stepper performance
JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
DE19602445A1 (de) * 1996-01-24 1997-07-31 Nanopro Luftlager Produktions Vorrichtung und Verfahren zum Vermessen von zwei einander gegenüberliegenden Oberflächen eines Körpers
US5805290A (en) 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
JPH09326349A (ja) 1996-06-06 1997-12-16 Hitachi Ltd パターン露光の補正方法
US6023338A (en) 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
US5912738A (en) * 1996-11-25 1999-06-15 Sandia Corporation Measurement of the curvature of a surface using parallel light beams
US6031611A (en) * 1997-06-03 2000-02-29 California Institute Of Technology Coherent gradient sensing method and system for measuring surface curvature
US5919714A (en) 1998-05-06 1999-07-06 Taiwan Semiconductor Manufacturing Company, Ltd. Segmented box-in-box for improving back end overlay measurement
JP2000091197A (ja) 1998-09-10 2000-03-31 Toshiba Corp X線マスク製造装置およびx線マスク製造方法
US7444616B2 (en) 1999-05-20 2008-10-28 Micronic Laser Systems Ab Method for error reduction in lithography
CN1196031C (zh) 1999-05-20 2005-04-06 麦克隆尼克激光系统有限公司 在平版印刷中用于减少误差的方法
US6477432B1 (en) * 2000-01-11 2002-11-05 Taiwan Semiconductor Manufacturing Company Statistical in-process quality control sampling based on product stability through a systematic operation system and method
JP2001332609A (ja) 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
US6469788B2 (en) * 2000-03-27 2002-10-22 California Institute Of Technology Coherent gradient sensing ellipsometer
US6442496B1 (en) * 2000-08-08 2002-08-27 Advanced Micro Devices, Inc. Method and apparatus for dynamic sampling of a production line
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
JP3572053B2 (ja) 2001-05-31 2004-09-29 株式会社東芝 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法およびサーバー
TW589723B (en) 2001-09-10 2004-06-01 Ebara Corp Detecting apparatus and device manufacturing method
JP4938219B2 (ja) 2001-12-19 2012-05-23 ケーエルエー−テンカー コーポレイション 光学分光システムを使用するパラメトリック・プロフィーリング
US7069104B2 (en) 2002-04-30 2006-06-27 Canon Kabushiki Kaisha Management system, management apparatus, management method, and device manufacturing method
JP4532845B2 (ja) * 2002-04-30 2010-08-25 キヤノン株式会社 管理システム及び方法並びにデバイス製造方法
US6912435B2 (en) 2002-08-28 2005-06-28 Inficon Lt Inc. Methods and systems for controlling reticle-induced errors
US8017411B2 (en) 2002-12-18 2011-09-13 GlobalFoundries, Inc. Dynamic adaptive sampling rate for model prediction
JP4005910B2 (ja) 2002-12-27 2007-11-14 株式会社東芝 パターン描画方法及び描画装置
CN1764898A (zh) * 2003-01-27 2006-04-26 加州理工大学 对集成在衬底上的嵌入式线路和导孔中的应力的分析和监控
US6847919B2 (en) * 2003-02-21 2005-01-25 Texas Instruments Incorporated Characterizing an exposure tool for patterning a wafer
US6847458B2 (en) * 2003-03-20 2005-01-25 Phase Shift Technology, Inc. Method and apparatus for measuring the shape and thickness variation of polished opaque plates
US6766214B1 (en) * 2003-04-03 2004-07-20 Advanced Micro Devices, Inc. Adjusting a sampling rate based on state estimation results
US6859746B1 (en) * 2003-05-01 2005-02-22 Advanced Micro Devices, Inc. Methods of using adaptive sampling techniques based upon categorization of process variations, and system for performing same
US7250237B2 (en) 2003-12-23 2007-07-31 Asml Netherlands B.V. Optimized correction of wafer thermal deformations in a lithographic process
JP2005233928A (ja) 2004-01-23 2005-09-02 Horiba Ltd 基板検査装置
US7126668B2 (en) 2004-04-28 2006-10-24 Litel Instruments Apparatus and process for determination of dynamic scan field curvature
US7259828B2 (en) * 2004-05-14 2007-08-21 Asml Netherlands B.V. Alignment system and method and device manufactured thereby
US7363173B2 (en) 2004-06-01 2008-04-22 California Institute Of Technology Techniques for analyzing non-uniform curvatures and stresses in thin-film structures on substrates with non-local effects
GB0510497D0 (en) 2004-08-04 2005-06-29 Horiba Ltd Substrate examining device
JP4449697B2 (ja) * 2004-10-26 2010-04-14 株式会社ニコン 重ね合わせ検査システム
US7239368B2 (en) 2004-11-29 2007-07-03 Asml Netherlands B.V. Using unflatness information of the substrate table or mask table for decreasing overlay
JP2006278767A (ja) 2005-03-29 2006-10-12 Toshiba Corp オーバーレイ制御システム及びオーバーレイ制御方法
JP2006286747A (ja) * 2005-03-31 2006-10-19 Sony Corp 位置合わせ方法、その装置、プロセス制御装置およびプログラム
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
US7184853B2 (en) 2005-05-18 2007-02-27 Infineon Technologies Richmond, Lp Lithography method and system with correction of overlay offset errors caused by wafer processing
US7853920B2 (en) * 2005-06-03 2010-12-14 Asml Netherlands B.V. Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing
CN101238384B (zh) 2005-07-08 2012-01-18 罗格·贝克尔 射频识别(rfid)标签及技术
EP1744217B1 (en) 2005-07-12 2012-03-14 ASML Netherlands B.V. Method of selecting a grid model for correcting grid deformations in a lithographic apparatus and lithographic assembly using the same
US7566900B2 (en) * 2005-08-31 2009-07-28 Applied Materials, Inc. Integrated metrology tools for monitoring and controlling large area substrate processing chambers
US7433051B2 (en) 2006-03-09 2008-10-07 Ultratech, Inc. Determination of lithography misalignment based on curvature and stress mapping data of substrates
US7398172B2 (en) * 2006-05-31 2008-07-08 International Business Machines Corporation Method and system of providing a dynamic sampling plan for integrated metrology
JP5634864B2 (ja) 2007-05-30 2014-12-03 ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation リソグラフィック・プロセスに於ける、プロセス制御方法およびプロセス制御装置

Also Published As

Publication number Publication date
US20080286885A1 (en) 2008-11-20
US20170255188A1 (en) 2017-09-07
US10649447B2 (en) 2020-05-12
KR20140057679A (ko) 2014-05-13
KR101608479B1 (ko) 2016-04-05
JP5537684B2 (ja) 2014-07-02
JP5980825B2 (ja) 2016-08-31
KR101531992B1 (ko) 2015-06-29
KR20150006074A (ko) 2015-01-15
US8175831B2 (en) 2012-05-08
JP5425760B2 (ja) 2014-02-26
KR20140066249A (ko) 2014-05-30
JP2010537394A (ja) 2010-12-02
JP2013153167A (ja) 2013-08-08
US9651943B2 (en) 2017-05-16
WO2008131422A1 (en) 2008-10-30
KR20100017274A (ko) 2010-02-16
JP2014140058A (ja) 2014-07-31
KR101448970B1 (ko) 2014-10-14
US20120208301A1 (en) 2012-08-16
KR101531974B1 (ko) 2015-06-29

Similar Documents

Publication Publication Date Title
KR101608479B1 (ko) 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
JP6462022B2 (ja) 向上したプロセス制御のための品質測定値を提供するための方法
JP7685541B2 (ja) 製品ユニットの製造プロセスのシーケンスの最適化
WO2016164372A1 (en) Feed forward of metrology data in a metrology system
KR20180096776A (ko) 패터닝 공정의 제어 방법, 디바이스 제조 방법, 리소그래피 장치용 제어 시스템 및 리소그래피 장치
KR20130034631A (ko) 기판에 패턴을 적용하는 방법, 디바이스 제조 방법, 및 이러한 방법들에 이용하기 위한 리소그래피 장치
KR102284564B1 (ko) 기판의 속성을 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법
US11300887B2 (en) Method to change an etch parameter
TWI888560B (zh) 計量方法,計量系統及偏移校準工具
US20070105244A1 (en) Analytical apparatus, processing apparatus, measuring and/or inspecting apparatus, exposure apparatus, substrate processing system, analytical method, and program
JP5035685B2 (ja) 解析装置、処理装置、測定装置、露光装置、基板処理システム、解析方法及びプログラム
JP4947483B2 (ja) デバイス製造処理方法、デバイス製造処理システム、プログラム及び記憶媒体
TWI788678B (zh) 度量衡中不可校正之誤差
TW202318098A (zh) 監測微影程序之方法及其相關設備
TW202447356A (zh) 用於判定用於在基板之曝光場上曝光圖案之微影製程的子場控制之場內校正之方法及相關聯電腦程式及非暫態電腦程式載體

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20160325

Application number text: 1020147035320

Filing date: 20141216

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20160425

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20160511

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20161121

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20160511

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

PC1202 Submission of document of withdrawal before decision of registration

Comment text: [Withdrawal of Procedure relating to Patent, etc.] Withdrawal (Abandonment)

Patent event code: PC12021R01D

Patent event date: 20161125

WITB Written withdrawal of application