JP5425760B2 - ウエハー上で実施される測定中のプロセスに関するダイナミック・サンプリング・スキームを生成または実施するための方法ならびにシステム - Google Patents

ウエハー上で実施される測定中のプロセスに関するダイナミック・サンプリング・スキームを生成または実施するための方法ならびにシステム Download PDF

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JP5425760B2
JP5425760B2 JP2010506456A JP2010506456A JP5425760B2 JP 5425760 B2 JP5425760 B2 JP 5425760B2 JP 2010506456 A JP2010506456 A JP 2010506456A JP 2010506456 A JP2010506456 A JP 2010506456A JP 5425760 B2 JP5425760 B2 JP 5425760B2
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Prior art keywords
wafer
sampling scheme
measurement
measurements
sampling
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Japanese (ja)
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JP2010537394A5 (enExample
JP2010537394A (ja
Inventor
イジクソン・パベル
ロビンソン・ジョン
アデル・マイク
ウィドマン・アマー
ドンサブ・チョイ
マーシェリ・アナト
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B21/00—Systems involving sampling of the variable controlled
    • G05B21/02—Systems involving sampling of the variable controlled electric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • General Factory Administration (AREA)
  • Testing And Monitoring For Control Systems (AREA)
JP2010506456A 2007-04-23 2008-04-23 ウエハー上で実施される測定中のプロセスに関するダイナミック・サンプリング・スキームを生成または実施するための方法ならびにシステム Active JP5425760B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US91343507P 2007-04-23 2007-04-23
US60/913,435 2007-04-23
US12/107,346 US8175831B2 (en) 2007-04-23 2008-04-22 Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers
US12/107,346 2008-04-22
PCT/US2008/061299 WO2008131422A1 (en) 2007-04-23 2008-04-23 Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers

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JP2013015975A Division JP5537684B2 (ja) 2007-04-23 2013-01-30 ウエハー上で実施される測定中のプロセスに関するダイナミック・サンプリング・スキームを生成または実施するための方法ならびにシステム

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JP2010537394A JP2010537394A (ja) 2010-12-02
JP2010537394A5 JP2010537394A5 (enExample) 2011-05-26
JP5425760B2 true JP5425760B2 (ja) 2014-02-26

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JP2013015975A Active JP5537684B2 (ja) 2007-04-23 2013-01-30 ウエハー上で実施される測定中のプロセスに関するダイナミック・サンプリング・スキームを生成または実施するための方法ならびにシステム
JP2014040657A Active JP5980825B2 (ja) 2007-04-23 2014-03-03 ウエハー上で実施される測定中のプロセスに関するダイナミック・サンプリング・スキームを生成または実施するための方法ならびにシステム

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JP2014040657A Active JP5980825B2 (ja) 2007-04-23 2014-03-03 ウエハー上で実施される測定中のプロセスに関するダイナミック・サンプリング・スキームを生成または実施するための方法ならびにシステム

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US (3) US8175831B2 (enExample)
JP (3) JP5425760B2 (enExample)
KR (5) KR101608479B1 (enExample)
WO (1) WO2008131422A1 (enExample)

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