KR20160038746A - Vacuum deposition apparatus - Google Patents
Vacuum deposition apparatus Download PDFInfo
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- KR20160038746A KR20160038746A KR1020150131559A KR20150131559A KR20160038746A KR 20160038746 A KR20160038746 A KR 20160038746A KR 1020150131559 A KR1020150131559 A KR 1020150131559A KR 20150131559 A KR20150131559 A KR 20150131559A KR 20160038746 A KR20160038746 A KR 20160038746A
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- film
- organic material
- film thickness
- organic
- quartz
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- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 176
- 239000011368 organic material Substances 0.000 claims abstract description 153
- 239000010453 quartz Substances 0.000 claims abstract description 141
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 141
- 238000001704 evaporation Methods 0.000 claims abstract description 140
- 230000008020 evaporation Effects 0.000 claims abstract description 137
- 238000000151 deposition Methods 0.000 claims abstract description 82
- 230000008021 deposition Effects 0.000 claims abstract description 71
- 230000010355 oscillation Effects 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims description 340
- 238000007740 vapor deposition Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 37
- 238000012544 monitoring process Methods 0.000 claims description 33
- 238000005137 deposition process Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 230000007246 mechanism Effects 0.000 claims description 13
- 238000007738 vacuum evaporation Methods 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 9
- 238000005019 vapor deposition process Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 150000007530 organic bases Chemical class 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- -1 composed of Al or Al Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L51/56—
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- H01L21/203—
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- H01L51/001—
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- H01L2251/56—
Landscapes
- Physical Vapour Deposition (AREA)
- Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
(PROBLEMS) By using a quartz oscillator in which an evaporated organic material evaporated from other evaporation sources in advance is formed in a predetermined film thickness in a crystal oscillation type film deposition system of one evaporation source, an organic material base There is provided an excellent vacuum deposition apparatus provided with a crystal oscillation type film deposition apparatus capable of forming a plurality of crystal oscillators with a film in advance and suppressing the rise of the equivalent series resistance of the crystal oscillator and lengthening the life span that.
A plurality of crystal oscillators (4) of a crystal oscillation type film thickness controller for controlling the film thickness and the deposition rate of one evaporation source are controlled in advance by controlling the film thickness and the deposition rate in the evaporation process by other evaporation sources in the remainder And a quartz oscillator to which an organic material base film is attached, in which an organic material base film of the organic material is formed on the plurality of quartz crystal vibrators.
Description
The present invention relates to a vacuum evaporation apparatus for forming a thin film on a substrate in a vacuum tank maintaining a reduced pressure atmosphere and a vacuum deposition apparatus provided with a crystal oscillation type film thickness gauge for controlling the film thickness or deposition rate To a vacuum deposition apparatus.
BACKGROUND ART In a vacuum vapor deposition apparatus in which a thin film is formed on a substrate by a vacuum deposition method, a film thickness is used to control a film thickness and a deposition rate (film thickness rate). There are various kinds of these film thicknesses depending on the measurement method, but the quartz crystal method is widely used.
The quartz quartz crystal filter using the quartz oscillator method uses the fact that the resonance vibration changes due to the change in mass when an evaporation material is attached to the surface of the quartz crystal. For example, by measuring the change in resonance frequency (oscillation frequency) The film thickness and the film thickness are measured and fed back to the heating control device of the evaporation source to control the film thickness of the deposited thin film on the substrate uniformly and to control the film thickness.
When the thin film is deposited thick on the electrode film of the quartz vibrator at the time of measuring the film thickness (monitoring of the film thickness) by such a quartz vibrating film subscale, the resonance vibration becomes unstable or the equivalent series resistance (crystal impedance) The current flowing through the quartz crystal oscillator is lowered, and the phenomenon that resonance vibration can not be measured occurs. Therefore, when it is deposited in such a thick state that the resonance vibration can not be measured, it is determined that the life of the quartz crystal is the life of the quartz crystal, and the quartz crystal is replaced with a new quartz crystal.
Specifically, for example, the crystal holder holding a plurality of crystal oscillators is rotated so that the exchange of the crystal oscillator can be continuously performed in the vacuum tank.
In order to lengthen the life of the quartz crystal, in order to prevent cracks or peeling of the film from occurring even if the thin film is deposited thickly, according to Patent Document 1 (Japanese Patent Application Laid-Open No. 2000-101387) The soft metal film is formed on the electrode film on the film surface in advance to relax the internal stress of the film to prevent peeling and cracking of the film.
According to Patent Document 2 (Japanese Patent Laid-Open Publication No. 2014-70238), a vacuum chamber has at least two evaporation sources and a corresponding film thickness sensor, and a material which is difficult to adhere to the surface of the quartz crystal from one evaporation source evaporates And a material evaporating from the other evaporation source is introduced in advance into the film thickness sensor for monitoring the film thickness of the quartz crystal so that a base film is formed on the surface of the quartz crystal with a material having good adhesiveness before deposition of a material difficult to adhere, So that accurate evaporation rate can be detected.
However, the method of forming the metal film in advance on the quartz crystal vibrator described in
A method of previously forming a base film by introducing a material evaporating from the other evaporation source into a film-forming sensor of a hardly attachable material provided on one of the evaporation sources known in
That is, even if it is possible to prevent peeling or cracking of the evaporation film, in the case of depositing an organic material having a small specific gravity as the evaporation material, as the film thickness of the evaporation film becomes larger as the organic material is deposited on the electrode, The problem that the oscillation frequency can not be measured can be sufficiently solved because the equivalent series resistance rises as the film thickness of the evaporation film increases even if the oscillation itself is maintained, since it can not follow the thickness sliding vibration none. In particular, in the metal film of the base film, the increase of the equivalent series resistance due to the film interface with the organic material can not be suppressed, and the lifetime of the crystal oscillation film film can not be shortened or lengthened.
Particularly, the evaporation material for producing the organic EL device is an organic material having a low specific gravity and is inferior in adhesion with the electrode film (for example, Au or Ag) on the surface of the quartz crystal, and can not follow the thickness slip vibration of the quartz crystal Even if the metal base film is formed, this organic material is simply placed on the electrode film. Therefore, when the film thickness of the vapor deposition film increases, the equivalent series resistance value rises.
Further, in the method of introducing the organic material not monitoring the film thickness through the introduction tube to the surface of the quartz crystal, it is not possible to form a plurality of quartz crystal vibrators with the base film formed uniformly in a sufficient amount, It can not cope with the operation of
DISCLOSURE OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to solve the above problems and provide a method of controlling the thickness and deposition rate of a crystal oscillator, (The other of the rest) evaporation source is evaporated to form an organic material base film of a predetermined film thickness in advance, and a plurality of quartz crystal vibrators having a base film of a predetermined film thickness, Deposition of the organic material evaporated from the (one) evaporation source while controlling the film thickness and the deposition rate by using a crystal oscillation type film thickness regulator suppresses an increase in the equivalent series resistance of the quartz crystal, In addition, as described above, the organic material base film can be uniformly formed to have a constant film thickness, and further, And has an object to provide an innovative vacuum deposition apparatus that can be pre-formed and efficiently without the need for a film-forming step.
The gist of the present invention will be described with reference to the accompanying drawings.
A vacuum evaporation apparatus for depositing an organic material evaporated from at least two evaporation sources (2) in a vacuum chamber (1) on a surface of a substrate (3) to form a thin film, characterized in that each evaporation source (M) for controlling the film thickness or the deposition rate of the surface of the substrate (3) is provided in the vacuum chamber (1), and the crystal oscillation type film thickness meter (M) Wherein the one crystal oscillation type film thickness meter M provided in the one
The
The vacuum evaporation apparatus according to
The vacuum evaporation apparatus according to
The electrode film (5) formed on the front and back surfaces of the quartz crystal vibrator (4) is formed of a plurality of metals mainly composed of Al or Al. To a deposition apparatus.
Further, it is preferable to provide a moving mechanism (13) for moving the crystal oscillation type film thickness meter (M) while controlling the film thickness or deposition rate of the organic material evaporated from another evaporation source (2) After the evaporation process by the
Further, it is preferable to provide a moving mechanism (13) for moving the crystal oscillation type film thickness meter (M) while controlling the film thickness or deposition rate of the organic material evaporated from another evaporation source (2) After the evaporation process by the
The vacuum deposition apparatus according to any one of
The vacuum deposition apparatus according to
The vacuum deposition apparatus according to claim 6, wherein the organic material is an organic material for manufacturing an organic EL device.
The vacuum deposition apparatus according to
Since the present invention is constituted as described above, the film thickness and the deposition rate are controlled by a crystal oscillation type film thickness meter, and by monitoring the film thickness, the surface of a plurality of crystal oscillators of the crystal oscillation type film thickness meter A plurality of quartz oscillators having a plurality of quartz crystals having a predetermined film thickness of a predetermined film thickness formed in a sufficient amount and having a predetermined film thickness; Deposition of the organic material evaporated from the (one) evaporation source while controlling the film thickness or the deposition rate is suppressed by using a film deposition system, the rise of the equivalent series resistance of the quartz crystal can be suppressed and the life span can be improved, As described above, the organic material base film can be uniformly formed to have a constant film thickness, and further, It is an epoch-making vacuum vapor deposition apparatus that can be formed in advance efficiently without requiring a deposition step.
In other words, while controlling the film thickness (monitoring the film thickness) in the same manner as the film thickness of the substrate in the crystal oscillation film system, the organic material evaporated from the evaporation source (other than the rest) (A new deposition process for forming a base film) is not provided separately from the deposition process, and the deposition of the organic material having a uniform film thickness (constant film thickness) And thus an increase in the equivalent series resistance of the quartz oscillator can be suppressed and thus the life span of the crystal oscillator can be increased.
That is, the organic material is controlled to have a predetermined thickness on the electrode film of the quartz vibrator by the film thickness and the deposition rate limit in other deposition processes in advance, and is deposited together with the substrate to form an organic material base film The adhesion between the electrode film and the base film of the organic material is good and the adhesion between the base film of the organic material and the deposition material (organic material) is good as compared with the case where the deposition material (organic material) is directly deposited on the electrode film And the affinity with the evaporation material is also better than that in the case of using the metal film as the base film, so that the film interface becomes ambiguous as compared with the metal film, and even if the film thickness of the evaporation film by the evaporation material increases, The lifetime can be prolonged and monitoring for a long period of time can be carried out. In addition, this organic material base film forming process can also be carried out with the necessary increase Because the process and is not need to be equipped separately, productivity is also extremely high vacuum deposition apparatus.
More specifically, when the organic material base film is formed on the electrode film of the quartz vibrator in advance, the adhesion between the electrode film and the evaporation material is deteriorated, the evaporation film can not follow the resonance vibration of the quartz vibrator, The increase of the equivalent series resistance of the quartz oscillator when depositing the evaporation material which has the energy loss for oscillation and in which the equivalent series resistance of the quartz oscillator is raised is suppressed so that the lifetime is increased And is capable of being monitored for a long time, is a vacuum vapor deposition apparatus equipped with a crystal oscillation type film deposition apparatus.
Further, among the plurality of evaporation sources in the vacuum chamber, the quartz crystal oscillator of the crystal oscillation type film thickness controller for controlling the film thickness or vapor deposition rate of the organic material evaporated from one evaporation source, It is possible to perform monitoring of the film thickness by switching to a separate quartz oscillator which is provided plural times when a certain film thickness is formed without depositing the different organic materials vaporized from the lower limit of the resonance frequency, , The crystal oscillator monitoring the film thickness is sequentially switched to sequentially form an organic material base film having a predetermined film thickness on each crystal oscillator so that the organic film base film deposited with a precisely constant film thickness A plurality of quartz oscillators are formed, (Used for a quartz oscillator of a crystal oscillation type membrane sub-system for one evaporation source), it is possible to suppress the rise of the equivalent series resistance and to provide an excellent Thereby forming a vacuum evaporation apparatus.
In other words, since the monitoring of the film thickness and the formation of the base film at the time of (next) monitoring of the film thickness are performed simultaneously (as can be compatible), as described above, A plurality of quartz oscillators to which the organic material base film is attached can be provided, so that the vacuum vapor deposition apparatus is excellent in practicality.
Further, in the invention described in
In the invention described in
In addition, in the invention described in
In addition, in the invention described in
Further, in the invention according to
Fig. 1 is a schematic configuration diagram of a vacuum vapor deposition apparatus using a crystal oscillation type film deposition apparatus according to the present embodiment.
2 is an explanatory diagram of a crystal holder which is a part of a crystal oscillation type film thickness gauge according to the present embodiment.
3 is an explanatory diagram of a cover which is a part of a crystal oscillation type film thickness gauge according to the present embodiment.
4 is a schematic configuration explanatory view showing an example of a cluster system of an organic EL device manufacturing apparatus.
5 is a schematic explanatory diagram of the quartz crystal resonator of this embodiment.
6 is a graph showing the equivalent time series resistance value stabilization time to the film thickness of the organic material base film by the organic material deposition of this embodiment.
Fig. 7 is a schematic structural explanatory plan view showing a moving mechanism of the crystal oscillation type film deposition apparatus in the vacuum evaporation apparatus of this embodiment.
Fig. 8 is a side view schematically showing the moving mechanism of the crystal oscillation type film deposition apparatus in the vacuum evaporation apparatus of this embodiment.
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
The vacuum vapor deposition apparatus of the present invention has at least two
For example, even when an organic material having a small specific gravity for producing an organic EL device is deposited, adhesion with the electrode film 5 (for example, Au or Ag) on the surface of the
Therefore, the organic material for forming the organic film base film 6 on the
In addition, when the base film is a metal film made of a metal material rather than an organic material, the film interface with the evaporation material occurs even if the adhesion with the
When the
For example, in the vacuum vapor deposition apparatus, the
The vacuum vapor deposition apparatus for manufacturing the organic EL device has a plurality of organic
Further, by setting the film thickness of the organic material base film 6 to at least 2 mu m or more, the rise of the equivalent series resistance of the
The
Further, in the structure in which the crystal oscillator type film thickness meter M has a larger number of
Example
A specific embodiment of the present invention will be described with reference to the drawings.
This embodiment is characterized in that a vacuum deposition (vacuum deposition) process is carried out with a quartz crystal growth meter M for controlling the film thickness at the time of forming a thin film by depositing an organic material evaporated from the
This embodiment is characterized in that at least two
Among them, the crystal oscillation type film thickness meter M (one crystal oscillation type film thickness meter M of one evaporation source 2) of the
The production of the
That is, in this embodiment, the crystal oscillation type film deposition system M is provided for each deposition step (for each evaporation source 2), and the crystal oscillation type film deposition system M does not move, And the
On the other hand, a quartz crystal growth meter M having a
Either way, according to the present invention, by forming the organic material base film (6) having a constant film thickness simultaneously with the monitoring of the film thickness in the deposition process by the other evaporation source (2) among the others, It is possible to efficiently form a plurality of
Fig. 1 shows a schematic configuration of a vacuum evaporation apparatus which can be continuously used for a long time on a large substrate using the crystal oscillation type film deposition apparatus M of the present embodiment. In this embodiment, Two
The crystal oscillator type film thickness meter M of the present embodiment is configured such that the evaporation material injected from the
A chopper which is a shielding member having an opening portion and a non-opening portion so as to suppress the amount of deposition of the evaporation material emitted from the
The crystal oscillation type film thickness meter M as a monitor for controlling the film thickness in this embodiment includes a
Fig. 4 also shows a configuration of a vacuum deposition apparatus having a plurality of organic
The organic material (B) selected as the organic material base film (6) does not rise in the equivalent series resistance of the quartz crystal vibrator (4) when it is deposited alone as described above. Concretely, the adhesion to the
In addition, when the base film is a metal film made of a metal material rather than an organic material, an interface with the evaporation material A (organic material A) occurs even if the adhesion with the
That is, the organic material (B) for forming the organic material base film 6 is an organic material having good affinity with the evaporation material (A) (organic material (A)) to be deposited thereon, The organic material (B) having higher adhesion with the electrode film (5) than the organic material (A) is selected from the organic materials whose film thickness is monitored in the vacuum vapor deposition apparatus.
The electrode film formed on the front surface and the back surface of the
5 is a schematic configuration of the
Al is easily oxidized and an oxide film covered with oxygen is formed on the surface of the
6 shows an example in which an organic material is deposited as a preliminary film to be deposited in advance on the
The equivalent time series resistance value when the film thickness of the organic material base film 6 is 0.16 占 퐉 is 1 and the equivalent time when the film thickness of the organic material base film 6 is 0.78 占 퐉, 1.57 占 퐉 and 3.13 占 퐉 And the ratio of the stabilization time of the series resistance value.
As the film thickness of the organic material base film 6 becomes thicker with the film thicknesses of 0.78 mu m, 1.57 mu m, and 3.13 mu m, as compared with when the film thickness of the organic material base film 6 is 0.16 mu m, Time ratio is getting longer as 1.3, 2.2, and 6.8.
Therefore, the increase in the equivalent series resistance can be suppressed as the organic material base film 6 is thickly deposited. However, since the deposition amount of the evaporation material to be formed thereon is reduced by thick deposition of the base film, The film thickness is preferably at least 2 mu m or more and the thickness of the base film and the number of the formed
Fig. 7 is a schematic structural explanatory plan view showing a case in which the moving
At that time, the entire three crystal oscillation type membrane submergers M are moved in the short direction of the
Specifically, the crystal oscillation type film thickness meter M, which had been monitoring the film thickness with the
Therefore, evaporation of the organic material emitted from the
Fig. 8 shows the moving
Further, the present invention is not limited to the present embodiment, but a specific configuration of each constituent requirement can be appropriately designed.
1: vacuum chamber, 2: evaporation source, 3: substrate, 4: quartz oscillator, 5: electrode film, 6: organic base film, 12: organic vapor deposition chamber, 13:
Claims (11)
Wherein the vacuum chamber is constituted by a plurality of organic vapor deposition chambers and the respective evaporation sources and the crystal oscillation film system are disposed in the respective organic vapor deposition chambers and the plurality of crystals The vibrator is formed by forming the organic material base film on each of the plurality of quartz crystal vibrators in such a manner that an organic material evaporated from the evaporation source of another organic vapor deposition chamber in advance is replaced with a next quartz vibrator when a constant film thickness is formed, And monitoring the film thickness in the deposition process by the evaporation source of the one organic vapor deposition chamber with a quartz crystal deposition apparatus having a quartz crystal vibrator with the organic base film attached thereto. .
Wherein the organic material base film formed on each of the quartz crystal vibrators has a film thickness of at least 2 mu m or more.
Wherein the organic material base film formed on each of the quartz crystal vibrators has a film thickness of at least 2 mu m or more.
Wherein the electrode film formed on the front surface and the back surface of the quartz oscillator is formed of a plurality of metals containing Al or Al as a main component.
And a moving mechanism for moving the crystal oscillation type film deposition apparatus, wherein the organic material evaporated from the other evaporation sources in the remainder is deposited on each of the quartz crystal vibrators while controlling the film thickness or deposition rate to form the organic film base film And the organic film evaporated from the one evaporation source is deposited on the quartz oscillator to which the organic material base film is attached, And controlling the film thickness or the deposition rate of the surface of the substrate by controlling the one evaporation source and monitoring the film thickness in the deposition process by the one evaporation source.
Wherein the organic material is an organic material for producing an organic EL device.
Wherein the organic material is an organic material for producing an organic EL device.
Wherein the organic material is an organic material for producing an organic EL device.
Wherein the organic material is an organic material for producing an organic EL device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014200860A JP6448279B2 (en) | 2014-09-30 | 2014-09-30 | Vacuum deposition equipment |
| JPJP-P-2014-200860 | 2014-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20160038746A true KR20160038746A (en) | 2016-04-07 |
| KR101968798B1 KR101968798B1 (en) | 2019-04-12 |
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| KR1020150131559A KR101968798B1 (en) | 2014-09-30 | 2015-09-17 | Vacuum deposition apparatus |
Country Status (4)
| Country | Link |
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| JP (1) | JP6448279B2 (en) |
| KR (1) | KR101968798B1 (en) |
| CN (1) | CN105463377B (en) |
| TW (1) | TWI681066B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101870581B1 (en) * | 2017-09-29 | 2018-06-22 | 캐논 톡키 가부시키가이샤 | Method of determining life of crystal quartz oscilator, apparatus of measuring film thickness, film forming method, film forming apparatus and manufacturing method of electronic device |
| WO2022019606A1 (en) * | 2020-07-22 | 2022-01-27 | 주식회사 엘지화학 | Silicon-based coating composition, and silicon-based release film comprising same |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2018077388A1 (en) * | 2016-10-25 | 2018-05-03 | Applied Materials, Inc. | Measurement assembly for measuring a deposition rate, evaporation source, deposition apparatus, and method therefor |
| US10763143B2 (en) * | 2017-08-18 | 2020-09-01 | Applied Materials, Inc. | Processing tool having a monitoring device |
| JP7301578B2 (en) * | 2019-03-29 | 2023-07-03 | キヤノントッキ株式会社 | Film forming apparatus and film forming method |
| CN109930112A (en) * | 2019-04-15 | 2019-06-25 | 湖畔光电科技（江苏）有限公司 | A kind of vapor deposition cavity body structure |
| TWI701641B (en) * | 2019-10-01 | 2020-08-11 | 龍翩真空科技股份有限公司 | Wireless transmission film thickness monitoring device |
| WO2021079589A1 (en) * | 2019-10-21 | 2021-04-29 | 株式会社アルバック | Film forming device |
| CN111829428B (en) * | 2020-06-17 | 2022-02-15 | 华中科技大学 | Double-quartz-crystal diaphragm thickness control instrument and error correction method |
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| KR20120023273A (en) * | 2010-09-01 | 2012-03-13 | (주)알파플러스 | Thickness monitoring method for vacuum metallizing film using shutter and vacuum metallizing apparatus using the method |
| JP5854731B2 (en) * | 2010-11-04 | 2016-02-09 | キヤノン株式会社 | Film forming apparatus and film forming method using the same |
| TW201337013A (en) * | 2012-03-12 | 2013-09-16 | Hitachi High Tech Corp | Evaporation source device, vacuum vapor deposition device and manufacturing method for organic EL display device |
| CN103469172B (en) * | 2013-08-31 | 2015-08-05 | 上海膜林科技有限公司 | Quartz crystal coated method for controlling thickness and quartz crystal coated device |
| JP6223275B2 (en) * | 2014-05-15 | 2017-11-01 | キヤノントッキ株式会社 | Crystal oscillation film thickness meter |
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2014
- 2014-09-30 JP JP2014200860A patent/JP6448279B2/en active Active
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2015
- 2015-08-17 TW TW104126707A patent/TWI681066B/en active
- 2015-09-17 KR KR1020150131559A patent/KR101968798B1/en active IP Right Grant
- 2015-09-22 CN CN201510607517.1A patent/CN105463377B/en active Active
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| JP2000101387A (en) | 1998-09-22 | 2000-04-07 | Ulvac Japan Ltd | Crystal resonator for film thickness monitor |
| JP2005325400A (en) * | 2004-05-13 | 2005-11-24 | Seiko Epson Corp | Vacuum deposition system and thin film deposition method |
| JP2014065942A (en) * | 2012-09-26 | 2014-04-17 | Hitachi High-Technologies Corp | Vacuum evaporation device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101870581B1 (en) * | 2017-09-29 | 2018-06-22 | 캐논 톡키 가부시키가이샤 | Method of determining life of crystal quartz oscilator, apparatus of measuring film thickness, film forming method, film forming apparatus and manufacturing method of electronic device |
| WO2022019606A1 (en) * | 2020-07-22 | 2022-01-27 | 주식회사 엘지화학 | Silicon-based coating composition, and silicon-based release film comprising same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016069694A (en) | 2016-05-09 |
| CN105463377A (en) | 2016-04-06 |
| CN105463377B (en) | 2019-08-23 |
| KR101968798B1 (en) | 2019-04-12 |
| TW201627514A (en) | 2016-08-01 |
| JP6448279B2 (en) | 2019-01-09 |
| TWI681066B (en) | 2020-01-01 |
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