JP2002030419A - System and method for film deposition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To attain excellent system and method for film deposition and to stabilize and improve the deposition rate of an ultrafine particle film. SOLUTION: The system has an ultrafine particle formation chamber 1 as a vaporization chamber having an evaporation-source crucible 4 as a material- vaporizing part and an opening of a transfer pipe 3, and a film deposition chamber 2 having a nozzle 12 as a discharge part for discharging, toward a substrate 13, ultrafine particles 10 which come from the vaporized material generated in the evaporation-source crucible 4 and transferred by the transfer pipe 3. Only a part of the evaporation-source material 5 to be vaporized is heated to a vaporization temperature in the evaporation-source crucible 4, and the evaporation-source material 5 is supplied 9 from the outside of the ultrafine particle formation chamber 1, from the side opposite to the vaporization surface from which the evaporation-source material 5 is vaporized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for forming a film on a substrate such as a substrate.

[0002]

2. Description of the Related Art As a general method of forming a film, a thick film method in which a printing paste is baked or a thin film method such as vacuum deposition or sputtering is known. However, these materials are limited to a metal oxide or the like that can be formed on the substrate.

A crystal having two or more atoms and a particle size of 0.1 μm
The following ultrafine particles, once suspended in gas, become aerosol-like and have a very low free fall speed due to gravity.
It is easily transported on the gas flow. These phenomena are hardly affected even if the materials of the ultrafine particles have different densities like metals and compounds. It has been reported as a gas deposition method that a film of ultrafine particles can be formed by utilizing this property (materials of the 90th New Ceramics Society Study Group). Specifically, a substance vapor is generated in the ultrafine particle generation chamber, sent to the film formation chamber together with He gas through the transport pipe, and the ultrafine particles aggregated in the air are sent from the nozzle of the transport pipe to the surface of the substrate in the film formation chamber at an ultra-high speed. To form an ultrafine particle film by bringing the ultrafine particles into close contact with the surface of the substrate. Therefore, in the gas deposition method, there is no particular limitation on the film quality that can be formed on the substrate, and an ultrafine particle film can be formed using a metal, an inorganic substance, an organic compound, or the like.

FIG. 3 is a view showing a conventional film forming apparatus using a gas deposition method. This film forming apparatus includes a vacuum pump 1 in which a film forming chamber 102 is connected via a valve 115.
Since the chamber 14 is evacuated, a pressure difference between the ultrafine particle generation chamber 101 and the film formation chamber 102 is confirmed by the pressure gauges 116 provided in the respective chambers. The evaporation source crucible 103 is connected to a power supply 112 via an electrode 111, and the crucible 103 contains a substance 104 which is a bulk ultrafine particle material to be evaporated. In the ultrafine particle generation chamber 101, the aerosol-like metal ultrafine particle flow 106 generated by the resistance heating method in an inert gas atmosphere introduced through the valve 113 passes through the transport pipe 105 by the above-described differential pressure to form a film. It is conveyed into the forming chamber 102 and is ejected from the nozzle 108 as ultra-fine particles 109 at a high speed. The conventional film forming apparatus based on the gas deposition method forms an ultrafine particle film and a compact compact on the substrate 107 by this. Further, the transport of the ultrafine particles is stopped by closing the valve 110.

[0005]

SUMMARY OF THE INVENTION It is an object of the present invention to realize a good film forming apparatus and a good film forming method. The purpose is to stabilize and improve the deposition rate of a film.

[0006]

Means for Solving the Problems In order to solve the above problems, one of the present inventions is constituted as follows. A vaporizing chamber provided with a material vaporizing section and an opening of a transport pipe, and a discharge for emitting ultrafine particles based on the vaporized material generated in the material vaporizing section and transported by the transport pipe to a substrate disposed opposite thereto; A film forming chamber provided with a unit, wherein the material vaporizing unit has a heating unit for heating only a part of the evaporation source material to be vaporized to a vaporizing temperature. A film forming apparatus characterized in that: The term “vaporization” as used herein refers to a state change in which a material in a liquid or solid state obtains energy and molecules or atoms are scattered from the interface. Here, the ultrafine particles are those in which two or more atoms of the material constituting the ultrafine particles are bonded, and the particle diameter of the bonded body is 0.1 μm or less.

[0007] It is preferable to have means for controlling the amount of the evaporation source material heated to the vaporization temperature to 90% or more and 110% or less with respect to a desired amount. Any method may be used as long as the amount of the heated evaporation source material is controlled to be substantially constant at all times.For example, the amount of the heated evaporation source material in a molten state may be measured and the desired amount may be measured. It is preferable to perform control by repeating supply to the vaporizing section when the amount becomes 90% of the amount, and ending supply when the amount reaches 110% of the desired amount. The method of measuring the amount of the evaporation source material may be a commonly used method, and may use a means for measuring the weight or a means for measuring the displacement of the vaporized surface.

Further, the evaporation source material may be supplied at predetermined time intervals without measuring the amount, or a constant amount may be supplied at all times. It is preferable that the material to be vaporized is supplied from outside the production chamber.

It is preferable that the supply section supplies the evaporation source material to be vaporized from a direction which does not hinder the vaporization of the evaporation source material. Still further, the supply unit may supply the evaporation source material to be vaporized from a side opposite to a vaporization surface where the evaporation source material is vaporized.

One aspect of the present invention is configured as follows. The ultrafine particles generated by vaporizing the evaporation source material to be vaporized in the vaporization chamber are transported by a transport tube, and the ultrafine particles are released from a discharge portion provided in the transport tube and deposited on a substrate to form a film. In the method of forming a film, the evaporation source material is vaporized by heating only a part of the evaporation source material to a vaporization temperature.

Further, it is preferable that the amount of the evaporation source material heated to the vaporization temperature is always controlled to 90% or more and 110% or less of a desired amount. Further, the evaporation source material to be vaporized may be supplied from outside the vaporization chamber. The supply unit may supply the evaporation source material to be vaporized from a direction that does not hinder the vaporization of the evaporation source material.

Further, it is preferable that the supply section supplies the evaporation source material to be vaporized from a side opposite to a vaporization surface where the evaporation source material is vaporized.

One aspect of the present invention is configured as follows. A film forming apparatus for applying a vaporized material to a substrate, comprising: a vaporization chamber having a material vaporization unit that vaporizes an evaporation source material to be vaporized and a supply unit that supplies the evaporation source material to the material vaporization unit. The supply unit supplies the evaporation source material from outside the vaporization chamber, and supplies the evaporation source material from a direction that does not hinder the vaporization of the evaporation source material in the material vaporization unit. A film forming apparatus characterized in that: Specifically, the material is supplied from a surface other than the surface exposed to the vaporizing chamber of the material vaporizing section.

With the above configuration, the present invention can be applied to a conventionally known vapor deposition apparatus such as sputtering. It is preferable that the material vaporizing section has a heating means for heating the evaporation source material to be vaporized.

The material vaporizing section mentioned here includes a means for holding an evaporation source material to be vaporized and a means for applying energy for vaporizing the evaporation source material. In addition, the apparatus may further include a transport unit that transports the vaporized material generated in the vaporization chamber.

A substrate as a substrate to be formed into a film may be provided in the vaporization chamber. In the present invention, in particular, the vaporized material generated in the vaporization chamber is transferred by a transfer section such as a transfer pipe to the film formation target. It can be particularly suitably adopted in the configuration to be provided. It is preferable that the transport section transports the vaporized material together with a gas.

Further, the apparatus may further include means for supplying gas to the vaporization chamber, and the transport section may transport the vaporized material together with the gas supplied to the vaporization chamber.

One aspect of the present invention is configured as follows. A film forming apparatus for applying a vaporized material to a substrate, comprising: a vaporization chamber having a material vaporization unit that vaporizes an evaporation source material to be vaporized and a supply unit that supplies the evaporation source material to the material vaporization unit. The supply unit supplies the evaporation source material from outside the vaporization chamber, and supplies the evaporation source material from the side opposite to the vaporization surface of the evaporation source material in the material vaporization unit. A film forming apparatus characterized in that: It is preferable that the material vaporizing section has a heating means for heating the material to be vaporized.
In addition, the apparatus may further include a transport unit that transports the vaporized material generated in the vaporization chamber.

A substrate to be formed into a film may be provided in the vaporization chamber. In the present invention, in particular, the vaporized material generated in the vaporization chamber is transferred by a transfer section such as a transfer pipe and applied to the film formation target. It can be particularly suitably adopted in the configuration. It is preferable that the transport section transports the vaporized material together with a gas.

Further, the apparatus may further include means for supplying a gas to the vaporization chamber, and the transport section may transport the vaporized material together with the gas supplied to the vaporization chamber.

One of the present inventions is configured as follows. A film forming method for applying a material vaporized in a vaporization chamber to a substrate, wherein a step of vaporizing an evaporation source material to be vaporized in a material vaporization section, and a step of supplying the evaporation source material to the material vaporization section In the step of supplying the evaporation source material, the evaporation source material is supplied to the material vaporization section from outside the vaporization chamber and in a direction that does not hinder vaporization of the evaporation source material. A film forming method characterized by the following. The vaporizing step and the supplying step include:
The steps may be performed simultaneously or alternately. The vaporization in the material vaporization section may be performed by heating the material to be vaporized.

Furthermore, it is preferable that the vaporization of the material to be vaporized is performed by heating only a part of the material to be vaporized to the vaporization temperature. It is preferable that the amount of the evaporation source material heated to the vaporization temperature is always controlled to 90% or more and 110% or less of a desired amount.

[0023] Such a control method comprises the steps of:
It is preferable to perform the supplying step in combination. For example, vaporization of the evaporation source material is always performed, and when the amount of the evaporation source material to be heated becomes 90% of the desired amount, the supply is started, and the evaporation is reduced to 110% of the desired amount. The supply is terminated when it becomes. Further, a control method in which the step of always vaporizing and the step of supplying may be performed simultaneously.

It is preferable that the apparatus further comprises a transport section for transporting the vaporized material generated in the vaporization chamber. Also,
The transport unit may transport the vaporized material together with a gas.

It is preferable that the apparatus further comprises means for supplying a gas to the vaporization chamber, and the transport section transports the vaporized material together with the gas supplied to the vaporization chamber.

One aspect of the present invention is configured as follows. A film forming method for applying a material vaporized in a vaporization chamber to a substrate, wherein a step of vaporizing an evaporation source material to be vaporized in a material vaporization section, and a step of supplying the evaporation source material to the material vaporization section In the step of supplying the evaporation source material, the evaporation source material is supplied from the outside of the vaporization chamber and from the side of the material vaporization section opposite to the vaporization surface of the evaporation source material. Is a film forming method characterized by being supplied to a substrate. The vaporization in the material vaporization section may be performed by heating the material to be vaporized.

Further, it is preferable that the evaporation source material is vaporized by heating only a part of the evaporation source material to a vaporization temperature. In addition, the amount of the evaporation source material heated to the vaporization temperature is always 90% or more of the desired amount.
It is preferable to control it to a value equal to or less than a certain value.

Further, it is preferable that the apparatus further comprises a transport section for transporting the vaporized material generated in the vaporization chamber. Further, the vaporized material may be transported together with a gas. Further, a gas may be supplied to the vaporization chamber, and the transport section may transport the vaporized material together with the gas supplied to the vaporization chamber.

The present invention also provides an evaporation source crucible, an ultrafine particle generation chamber provided with an opening of a transfer pipe above the evaporation source crucible, a nozzle connected to the other opening of the transfer pipe, and a nozzle installed opposite to the nozzle. And a film forming chamber provided with a stage for fixing the substrate to be formed, wherein ultra-fine particles evaporating from an evaporation source material to be vaporized in the evaporation source crucible are mixed with a gas introduced into the ultra-fine particle generation chamber. An ultra-fine particle film forming apparatus or method for forming a film by conveying the inside of a conveying pipe and depositing the ultra-fine particles ejected from the nozzle on the substrate, wherein the evaporation source crucible is formed when the ultra-fine particles form a film. It may be characterized in that the evaporation source material is supplied.

Preferably, the amount of the evaporation source material supplied to the evaporation source crucible is controlled, and the weight of the ultrafine particles evaporated from the evaporation source is measured and fed back to the evaporation source crucible. It is desirable to control the amount of material, it is preferable to supply the evaporation source material from below the evaporation source crucible, and the diameter of the connection part between the supply pipe for supplying the evaporation source material and the evaporation source crucible is Preferably, the inner diameter of a supply pipe for supplying the evaporation source material to the evaporation source crucible is the same as or smaller than the inner diameter of the evaporation source crucible, and is supplied to the evaporation source crucible. It is preferable that the evaporation source material is a rod-shaped solid until immediately before, and that the evaporation source material is in a molten state in the evaporation source crucible. .

[0031]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) Hereinafter, a first embodiment of the present invention will be described in detail. FIG. 1 is a configuration diagram illustrating a film forming apparatus using a gas deposition method according to a first embodiment of the present invention. In this film forming apparatus, an opening of a transport pipe 3 is arranged in an ultrafine particle generation chamber 1 which is a vaporization chamber so as to face an evaporation source crucible 4. The evaporation source crucible 4 as a material vaporizing section is installed on a weighing scale (not shown). An electrode 8 is attached to the evaporation source crucible 4.
Electrode 8 is connected to power supply 7. A supply pipe 6 for supplying a solid evaporation source material 5 to be vaporized 9 to the evaporation source crucible 4 is provided below the evaporation source crucible 4. The supply of the evaporation source material 5 through the supply pipe 6 is performed in the
The vaporization of the evaporation source material 5 is performed from the lower side of the evaporation source crucible 4 in FIG.

The inner and outer diameters of the supply pipe 6 are smaller than the inner and outer diameters of the evaporation source crucible 4. A nozzle 12 serving as a discharge unit is provided at the opening of the transport pipe 3 in the ultrafine particle film forming chamber 2.
Is attached. Nozzle 12 moves arbitrarily in direction 1
Substrate 1 placed on stage 14 movable along 5
It is installed at a position facing 3. Electric power is applied to the evaporation source crucible 4 from the power source 7 via the electrode 8, and only a part of the evaporation source material 5 is heated to the vaporization temperature by resistance heating. The heating causes the evaporation source material 5 contained in the evaporation source crucible 4 for generating ultra-fine particles to melt and evaporate into ultra-fine particles 10. As described above, the evaporation source crucible 4 which is a material vaporizing section is
It serves as a means for holding the evaporation source material 5 to be vaporized, and as a means for heating the evaporation source material 5 and providing energy for vaporization.

At the same time that the inert gas is supplied from the valve 16 into the ultrafine particle generation chamber 1, the vacuum pump 17 is operated via the valve 18, and the film is formed from the internal pressure of the ultrafine particle generation chamber 1 while checking with the vacuum gauge 19. The ultrafine particles 10 are transported from the ultrafine particle generation chamber 1 to the film forming chamber 2 through the transport pipe 3 by the air flow 11 generated by lowering the internal pressure of the chamber 2, and are jetted at a high speed from the nozzle 12 to the substrate 13 as a base. An ultrafine particle film is formed on the upper surface.

In the case of this embodiment, the amount of the evaporation source material 5 heated to the vaporization temperature is always controlled to 90% or more and 110% or less of the desired amount. By keeping the amount of 5 almost constant at all times, the amount of vaporization can be kept constant over a long period of time without much adjustment of the amount of heating.

Further, the supply of the evaporation source material 5 is performed in a direction that does not hinder the vaporization of the evaporation source material 5 or the supply of the evaporation source material 5 is performed on a vaporized surface where the evaporation source material 5 is vaporized. By performing from the opposite side, a stable vaporization rate and, consequently, a stable film deposition rate can be obtained because the flow path of the vaporized material is not affected, and the film deposition rate is improved (the evaporation amount is increased). ) Has a long and stable effect. In addition, since the supply of the evaporation source material 5 can be supplied from outside the ultrafine particle generation chamber 1, which is a vaporization chamber, stable film formation can be performed for a long time.

(Second Embodiment) FIG. 2 shows a second embodiment of the present invention.
FIG. 2 is a configuration diagram showing a film forming apparatus using a gas deposition method according to the embodiment. In this film forming apparatus, an opening of a transfer pipe 3 is provided in an ultrafine particle generation chamber 1 which is a vaporization chamber.
0. The evaporation source crucible 20 as a material vaporizing section is installed on a weighing scale (not shown). The electrode 8 is attached to the evaporation source crucible 20. Electrode 8 is connected to power supply 7. Evaporation source crucible 2
Below 0, a supply pipe 21 for supplying 9 the solid evaporation source material 5 to be vaporized to the evaporation source crucible 20 is provided. The supply of the evaporation source material 5 by the supply pipe 21 is from the outside of the ultrafine particle generation chamber 1 to the side opposite to the vaporization surface where the evaporation source material 5 is vaporized from a direction that does not hinder the vaporization of the evaporation source material 5. In FIG. 2, the evaporation is performed from below the crucible 20.

The inside diameter and the outside diameter of the supply pipe 21 are the same as the inside diameter and the outside diameter of the evaporation source crucible 20, but the connecting portion between the supply pipe 21 and the evaporation source crucible 20 is narrowed. A nozzle 12 serving as a discharge unit is attached to an opening of the transport pipe 3 in the ultrafine particle film forming chamber 2. The nozzle 12 has a stage 14 movable along a moving direction 15.
It is installed at a position facing the substrate 13 as a base installed in the device. The evaporation source crucible 20 is supplied with electric power from the power source 7 via the electrode 8, and heats only a part of the evaporation source material 5 to the vaporization temperature by resistance heating. By the heating, the evaporation source material 5 to be vaporized for the generation of the ultrafine particles contained in the evaporation source crucible 20 is melted and evaporated into the ultrafine particles 10. As described above, the evaporation source crucible 20 serving as the material vaporizing section is used.
Plays a role as a means for holding the evaporation source material 5 to be vaporized and as a means for heating the evaporation source material 5 and giving energy for vaporization.

At the same time as supplying the inert gas into the ultrafine particle generation chamber 1 through the valve 16, the vacuum pump 17 is operated through the valve 18 and the internal pressure of the ultrafine particle generation chamber 1 is checked while checking with the vacuum gauge 19. The ultrafine particles 10 are transported from the ultrafine particle generation chamber 1 to the film formation chamber 2 through the transport pipe 1 by the air flow 11 generated by lowering the internal pressure of the film formation chamber 2, and are jetted at high speed from the nozzle 12 to discharge the substrate 13. An ultrafine particle film is formed on the upper surface.

Also in this embodiment, the amount of the evaporation source material 5 heated to the vaporization temperature is always 9 to the desired amount.
By controlling the amount of the evaporating source material 5 to be heated in this way to be almost constant at all times, it is possible to keep the amount of vaporization constant for a long time without requiring much adjustment of the amount of heating. can do.

Further, the supply of the evaporation source material 5 is performed in a direction that does not hinder the vaporization of the evaporation source material 5 or the supply of the evaporation source material 5 is performed on a vaporization surface where the evaporation source material 5 is vaporized. By performing from the opposite side, a stable vaporization rate and, consequently, a stable film deposition rate can be obtained because the flow path of the vaporized material is not affected, and the film deposition rate is improved (the evaporation amount is increased). ) Has a long and stable effect. In addition, since the supply of the evaporation source material 5 can be supplied from outside the ultrafine particle generation chamber 1, which is a vaporization chamber, stable film formation can be performed for a long time.

In particular, in the film forming apparatus and method according to each of the above embodiments of the present invention, the evaporation source material 5 to be vaporized for the generation of ultrafine particles is vaporized (gas-liquid interface).
If supplied from a place other than the above, a stable vaporization (evaporation) rate for a long time, that is, a stable film deposition rate can be obtained. In addition, by supplying the material to be vaporized particularly from the side opposite to the vaporized surface, the material supplied first can be vaporized sequentially, and the effect of stabilizing the characteristics of the vaporized ultrafine particles is also expected. it can.

[0042]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to embodiments. Example 1 Example 1 is an example in which the film forming apparatus according to the first embodiment of the present invention shown in FIG. 1 is used.
The transfer pipe 3 was made of stainless steel having an inner diameter of 1.6 mm. As the evaporation source crucible 4, an alumina-coated tungsten basket having an inner diameter of 13 mm and an outer diameter of 15 mm was used. The supply pipe 6 of the evaporation source material 5 to be vaporized for generation of ultrafine particles was made of stainless steel having an inner diameter of 6 mm. The nozzle 12 had a diameter of 0.1 mm and a length of 35 mm.
The distance between the opening of the ultrafine particle transport tube 3 and the evaporation source crucible 4 is 70
mm. Helium gas was introduced into the ultrafine particle generation chamber 1 and the film formation chamber 2. The air pressure in the ultrafine particle generation chamber 1 was increased, and the pressure in the film formation chamber 2 was reduced by the vacuum pump 17, so that the internal pressure difference between the ultrafine particle generation chamber 1 and the film formation chamber 2 was 2.1 atm.

30 g of copper was previously placed in the evaporation source crucible 4 and was heated to about 1400 ° C. by resistance heating and melted and evaporated. At this time, the weight of the evaporation source crucible 4 is measured, and the evaporation source material 5 to be vaporized for the generation of rod-shaped ultrafine particles having a diameter of about 5 mm from the supply pipe 6 is set at 0.0% so that the weight does not change.
The film was formed at a speed of 01 mm / min for 20 minutes.

On the upper surface of the stage 14 in the film forming chamber 2,
When a glass substrate was placed and the film was formed, the film formation speed was almost stable during the film formation time of 20 minutes, 0.81 μm / sec.
was.

Example 2 Example 2 is an example in which the film forming apparatus according to the second embodiment of the present invention shown in FIG. 2 is used. The transfer pipe 3 was made of stainless steel having an inner diameter of 1.6 mm. As the evaporation source crucible 20, an alumina-coated tungsten basket having an inner diameter of 7 mm and an outer diameter of 9 mm was used. The supply pipe 21 of the evaporation source material 5 to be vaporized for generation of ultrafine particles was made of stainless steel having an inner diameter of 7 mm. The nozzle 12 has a diameter of 0.1 mm and a length of 35 m
m. Opening of ultrafine particle transport tube 3 and evaporation source crucible 20
Was 70 mm. Helium gas was introduced into the ultrafine particle generation chamber 1 and the film formation chamber 2. The pressure in the ultrafine particle generation chamber 1 is increased, and the pressure in the film formation chamber 2 is reduced by the vacuum pump 17 to reduce the internal pressure difference between the ultrafine particle generation chamber 1 and the film formation chamber 2.1.
Atmospheric pressure.

9 g of copper was previously placed in the evaporation source crucible 20 and heated to about 1400 ° C. by resistance heating to be melted and evaporated. At this time, the weight of the evaporation source crucible 20 is measured, and the evaporation source material 5 to be vaporized for generating rod-like ultrafine particles having a diameter of about 5 mm from the supply pipe 21 is set at 0.
The film was formed at a speed of 003 mm / min for 20 minutes.

On the upper surface of the stage 14 in the film forming chamber 2,
When a glass substrate was set and the film was formed, the film formation speed was almost stable during the film formation time of 20 minutes, 0.94 μm / sec.
was.

According to each of the above embodiments of the present invention, since the evaporation source material 5 is externally supplied and partially heated, work with a large film formation amount can be easily performed. To
It was confirmed that the energy supplied at one time can be low, the heating device requires only a small amount of power, and the amount of evaporation can be controlled at a substantially constant heating temperature, so that it can be easily controlled.

[0049]

As described above, by adopting the structure of the present invention, it becomes possible to realize a good film forming apparatus and a good film forming method.

[Brief description of the drawings]

FIG. 1 is a configuration diagram illustrating a film forming apparatus using a gas deposition method according to a first embodiment and a first embodiment of the present invention.

FIG. 2 is a configuration diagram illustrating a film forming apparatus using a gas deposition method according to a second embodiment and an example 2 of the present invention.

FIG. 3 is a view showing a film forming apparatus using a conventional gas deposition method.

[Explanation of symbols]

1: Ultrafine particle generation chamber, 2: Ultrafine particle film formation chamber, 3: Conveyance pipe, 4: Evaporation source crucible, 5: Evaporation source material to be vaporized, 6: Supply pipe, 7: Power supply, 8: Electrode, 9 : Supply, 1
0: evaporated ultrafine particles, 11: air flow, 12: nozzle, 13:
Substrate, 14: Stage, 15: Moving direction, 16: Valve, 17: Vacuum pump, 18: Valve, 19: Vacuum gauge,
20: evaporation source crucible, 21: supply pipe, 101: ultrafine particle generation chamber, 102: film formation chamber, 103: evaporation source crucible, 1
04: substance, 105: ultrafine particle transport tube, 106: ultrafine particle flow, 107: substrate, 108: nozzle, 109: ultrafine particle, 110: valve, 111: electrode, 112: power supply,
113: valve, 114: vacuum pump, 115: valve, 116: pressure gauge.

Claims (26)

[Claims] 1. A vaporizing chamber provided with a material vaporizing section and an opening of a transfer pipe, and a base in which ultrafine particles based on a vaporized material generated in the material vaporizing section and transported by the transfer pipe are arranged to face each other. A film forming chamber provided with a discharge section for discharging the material, wherein the material vaporizing section heats only a part of the evaporation source material to be vaporized to a vaporizing temperature. A film forming apparatus, comprising: a heating unit that performs heating. 2. The apparatus according to claim 1, further comprising means for controlling the amount of the evaporation source material heated to the vaporization temperature to 90% or more and 110% or less of a desired amount. Film forming equipment. 3. The film forming apparatus according to claim 1, wherein the evaporation source material is supplied from outside the vaporization chamber. 4. The film forming apparatus according to claim 1, wherein the supply of the evaporation source material is performed in a direction that does not hinder vaporization of the evaporation source material. 5. The film forming apparatus according to claim 1, wherein the supply of the evaporation source material is performed from a side opposite to a vaporized surface on which the evaporation source material is vaporized. 6. Ultra-fine particles generated by vaporizing an evaporation source material to be vaporized in a vaporization chamber are transported by a transport tube, and the ultra-fine particles are released from a discharge section provided in the transport tube to be deposited on a substrate. In the film forming method for forming a film by depositing, the vaporization of the evaporation source material is performed by heating only a part of the evaporation source material to a vaporization temperature. 7. The film forming method according to claim 6, wherein the amount of the evaporation source material heated to the vaporization temperature is always controlled to 90% or more and 110% or less of a desired amount. . 8. The film forming method according to claim 6, wherein the evaporation source material is supplied from outside the vaporization chamber. 9. The film forming method according to claim 6, wherein the supply of the evaporation source material is performed in a direction that does not hinder vaporization of the evaporation source material. 10. The film forming method according to claim 6, wherein the supply of the evaporation source material is performed from a side opposite to a vaporized surface on which the evaporation source material is vaporized. 11. A film forming apparatus for applying a vaporized material to a substrate, comprising: a material vaporizer for vaporizing an evaporation source material to be vaporized; and a supply unit for supplying the material to the material vaporizer. Wherein the supply section supplies the evaporation source material from the outside of the vaporization chamber, and supplies the evaporation source material to the evaporation section in the material vaporization section. A film forming apparatus, wherein the film formation is performed from a direction that does not hinder the film formation. 12. A film forming apparatus for applying a vaporized material to a substrate, comprising: a material vaporizer for vaporizing an evaporation source material to be vaporized; and a supply unit for supplying the vaporization source material to the material vaporizer. Wherein the supply section supplies the evaporation source material from outside the vaporization chamber, and supplies the evaporation source material to the vaporization surface of the evaporation source material in the material vaporization section. A film forming apparatus characterized in that the film formation is performed from the side opposite to the above. 13. The material vaporizing section has a heating means for heating the evaporation source material.
Or the film forming apparatus according to 12. 14. The film forming apparatus according to claim 13, wherein the heating unit heats only a part of the evaporation source material to a vaporization temperature. 15. The film forming method according to claim 14, wherein the amount of the evaporation source material heated to the vaporization temperature is always controlled to 90% or more and 110% or less of a desired amount. apparatus. 16. The film forming apparatus according to claim 11, further comprising a transport unit that transports the vaporized material generated in the vaporization chamber. 17. The film forming apparatus according to claim 16, wherein the transport section transports the vaporized material together with a gas. 18. The apparatus according to claim 18, further comprising means for supplying a gas to the vaporization chamber, wherein the transport unit transports the vaporized material together with the gas supplied to the vaporization chamber. Item 18. A film forming apparatus according to item 17. 19. A film forming method for applying a material vaporized in a vaporization chamber to a substrate, comprising: a step of vaporizing an evaporation source material to be vaporized in a material vaporization section; In the step of supplying the evaporation source material, the evaporation source material comprises:
A film forming method, wherein the material is supplied to the material vaporizing section from outside the vaporizing chamber and from a direction that does not hinder vaporization of the evaporation source material. 20. A film forming method for applying a material vaporized in a vaporization chamber to a substrate, comprising: vaporizing an evaporation source material to be vaporized in a material vaporization section; Supplying the evaporation source material, wherein the evaporation source material is provided from the outside of the vaporization chamber and on the opposite side of the vaporization surface of the evaporation source material in the material vaporization section. A film forming method, wherein the film is supplied to the material vaporizing section from a substrate. 21. The film forming method according to claim 19, wherein the vaporization in the material vaporization section is performed by heating the evaporation source material. 22. The film forming method according to claim 21, wherein the evaporation source material is vaporized by heating only a part of the evaporation source material to a vaporization temperature. 23. The film forming method according to claim 22, wherein the amount of the evaporation source material heated to the vaporization temperature is always controlled to 90% to 110% of a desired amount. . 24. The film forming method according to claim 19, further comprising a transport unit that transports the vaporized material generated in the vaporization chamber. 25. The film forming method according to claim 24, wherein the vaporized material is transported together with a gas. 26. The apparatus according to claim 25, wherein a gas is supplied to the vaporization chamber, and the transport section transports the vaporized material together with the gas supplied to the vaporization chamber.
3. The film forming method according to item 1.