WO2021079589A1 - Film forming device - Google Patents
Film forming device Download PDFInfo
- Publication number
- WO2021079589A1 WO2021079589A1 PCT/JP2020/030210 JP2020030210W WO2021079589A1 WO 2021079589 A1 WO2021079589 A1 WO 2021079589A1 JP 2020030210 W JP2020030210 W JP 2020030210W WO 2021079589 A1 WO2021079589 A1 WO 2021079589A1
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- WO
- WIPO (PCT)
- Prior art keywords
- film
- film forming
- forming apparatus
- controller
- storage container
- Prior art date
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- 239000000463 material Substances 0.000 claims abstract description 29
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 230000010355 oscillation Effects 0.000 claims abstract description 4
- 238000004891 communication Methods 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 abstract description 13
- 230000004308 accommodation Effects 0.000 abstract 3
- 230000007246 mechanism Effects 0.000 description 34
- 239000000758 substrate Substances 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 17
- 230000007723 transport mechanism Effects 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Definitions
- the present invention relates to a film forming apparatus.
- One of the methods for controlling the vapor deposition rate of the film formed on the substrate in vacuum is to use a film thickness monitor.
- a film thickness monitor For example, in a vacuum vessel, a crystal oscillator type film thickness monitor is installed near the substrate, and feedback control is performed from the value detected by the film thickness monitor to obtain a desired vapor deposition rate (for example, Patent Document 1). reference).
- the feedback control may not be able to follow the external factor, and a stable vapor deposition rate may not be obtained.
- an object of the present invention is to provide a film forming apparatus capable of controlling the vapor deposition rate more stably.
- the film forming apparatus includes a vacuum container, a film forming source, a storage container, a film thickness sensor, and a film thickness controller.
- the film forming source is housed in the vacuum vessel.
- the storage container is housed in the vacuum container and can be maintained at a pressure higher than the pressure in the vacuum container.
- the film thickness sensor includes a vibrator having a resonance frequency, and a film forming material discharged from the film forming source is deposited on the film film sensor on the vibrator.
- the film thickness controller is housed in the storage container, and calculates the amount of the film-forming material released from the film-forming source based on the change in the oscillation frequency due to the deposition of the film-forming material.
- the film thickness controller is housed in the accommodating container in the vacuum container, the vapor deposition rate in the film forming apparatus is controlled more stably.
- the film forming apparatus may further include a main controller that controls the release amount of the film forming material discharged from the film forming source based on the release amount calculated by the film thickness controller.
- the deposition rate in the film forming apparatus is controlled more stably by the main controller.
- communication is performed between a link pipe having a plurality of pipes connected to each other and adjacent pipes flexibly connected to each other, the film thickness controller, and the main controller.
- Wiring may be further provided.
- the main controller may be provided outside the vacuum container, the link pipe may be connected to the storage container inside the vacuum container, and the communication wiring may be arranged inside the link pipe.
- the film thickness controller and the main controller may communicate with each other by digital communication through the communication wiring.
- the deposition rate in the film forming apparatus can be controlled more stably by using digital communication.
- the above-mentioned main controller may be accommodated in the above-mentioned storage container.
- the main controller is accommodated in the storage container, and the vapor deposition rate in the film forming apparatus is controlled more stably.
- the pressure of the above-mentioned storage container may be atmospheric pressure.
- the pressure of the accommodating container is atmospheric pressure, which simplifies the apparatus configuration.
- the film forming source may move inside the vacuum vessel in conjunction with the accommodating container.
- the above-mentioned film thickness controller and the above-mentioned main controller may be integrally configured as a controller module inside the above-mentioned storage container.
- the vapor deposition rate in the film forming apparatus is controlled more stably, and the size of the storage container is realized.
- a film forming apparatus capable of controlling the vapor deposition rate more stably.
- FIG. 1 is a schematic top view of the film forming apparatus of this embodiment.
- FIG. 2 is a schematic front view of the film forming apparatus of this embodiment.
- FIG. 1 shows a state in which the cross section along the line B1-B2 of FIG. 2 is viewed in the direction of the arrow, and
- FIG. 2 shows a state in which the cross section along the line A1-A2 in FIG. Has been done.
- FIG. 2 shows a film forming apparatus 1 in a region where the film forming source 20 is located.
- the film forming apparatus 1 shown in FIGS. 1 and 2 is linked to a vacuum vessel 10, a film forming source 20, a heating mechanism 30, a film thickness sensor 40, a temperature sensor 50, a main controller 60, and a storage container 70. It includes a pipe 80, a substrate support mechanism 92, a transport mechanism 95, a transport mechanism 96, and an exhaust mechanism 98.
- the vacuum container 10 is a container that can maintain a decompressed state.
- the gas inside the vacuum container 10 is exhausted by the exhaust mechanism 98.
- the planar shape is, for example, a rectangular shape.
- the vacuum container 10 includes a film forming source 20, a film thickness sensor 40, a film thickness controller 41, a temperature sensor 50, a temperature controller 51, a main controller 60, a storage container 70, a link pipe 80, a substrate support mechanism 92, and a transfer mechanism 95. Accommodates 96 mag.
- the vacuum vessel 10 may be provided with a gas supply mechanism capable of supplying gas. Further, the vacuum vessel 10 may be equipped with a pressure gauge for measuring the pressure inside the vacuum vessel 10.
- the film forming source 20 is filled with a film forming material.
- the film forming source 20 is a vapor deposition source in which the film forming material 20 m evaporates toward the substrate 90.
- the film forming source 20 extends in the uniaxial direction (Y-axis direction in the figure) as the longitudinal direction. When the film forming source 20 is viewed from above in the Z-axis direction, its outer shape is, for example, a rectangle.
- the film forming material 20 m is, for example, an organic material, a metal, or the like.
- the film forming source 20 is provided with a plurality of ejection nozzles 21.
- Each of the plurality of ejection nozzles 21 is arranged in a row in the longitudinal direction (X-axis direction) of the film forming source 20 at a predetermined interval.
- the film-forming material 20 m is ejected from each of the plurality of ejection nozzles 21. For example, when the film forming source 20 is heated by the heating mechanism 30, the steam of the film forming material 20 m evaporates from the ejection nozzle 21 toward the substrate 90.
- the heating mechanism 30 heats the film forming source 20.
- the heating mechanism 30 faces the side portion of the film forming source 20. When the heating mechanism 30 is viewed from the Z-axis direction, the heating mechanism 30 surrounds the film forming source 20.
- the heating mechanism 30 is, for example, an induction heating type or resistance heating type heating mechanism.
- the heating mechanism 30 is controlled by the main controller 60.
- wiring (conductor) 602 is routed from the main controller 60 to the heating mechanism 30.
- the wiring 602 is arranged inside the link pipe 80 and inside the storage container 70.
- the storage container 70 is made of metal, and can maintain a pressure higher than the pressure inside the vacuum container 10 inside the vacuum container 10.
- the pressure inside the storage container 70 is atmospheric pressure.
- the storage container 70 is arranged in line with the film forming source 20 in the Z-axis direction, and is provided below, for example, the film forming source 20. By arranging the storage container 70 and the film forming source 20 in the Z-axis direction, it is possible to suppress an increase in the size of the apparatus in the X-axis direction or the Y-axis direction, resulting in a compact configuration.
- a spacer 75 is provided between the storage container 70 and the film forming source 20.
- the storage container 70 extends in the uniaxial direction (Y-axis direction in the figure) as the longitudinal direction. When the storage container 70 is viewed from above in the Z-axis direction, its outer shape is, for example, a rectangle. In the example of FIG. 2, the storage container 70 houses, for example, the film thickness controller 41 and the temperature controller 51.
- a pair of transport mechanisms 95 are provided under the storage container 70.
- the pair of transport mechanisms 95 extend in the X-axis direction.
- Each of the pair of transport mechanisms 95 includes, for example, a moving mechanism such as a roller mechanism and a traction mechanism.
- the storage container 70 slides in the direction in which the transport mechanism 95 extends (X-axis direction).
- the film forming source 20 also slides in the vacuum container 10 in the X-axis direction so as to be interlocked with the storage container 70. That is, in the film forming apparatus 1, the film forming material 20 m is deposited on the substrate 90 while the substrate 10 and the film forming source 20 move relative to each other in the X-axis direction.
- a shutter mechanism may be provided between the substrate 90 and the film forming source 20 to shield the film from incident on the substrate 90 of the film forming material 20 m.
- FIG. 3 is a schematic top view of the film forming apparatus of the present embodiment, and FIG. 3 shows a state after the film forming source 20 and the storage container 70 are moved to the side opposite to the position of FIG. It is shown.
- a pair of transport mechanisms 96 are provided under the pair of transport mechanisms 95.
- the pair of transport mechanisms 96 extend in the Y-axis direction intersecting the X-axis direction.
- Each of the pair of transport mechanisms 96 includes, for example, a moving mechanism such as a roller mechanism and a traction mechanism. As a result, the storage container 70 can be slid and moved in the direction in which the transport mechanism 96 extends (Y-axis direction) in addition to the X-axis direction.
- the vacuum container 10 is provided with a region 90a into which a substrate other than the substrate 90 is carried. After the film forming process on the substrate 90 is completed, the film can be formed on another substrate in the region 90a. In this case as well, the film-forming material 20 m is deposited on the other substrate while the film-forming source 20 and the film-forming source 20 move relative to each other in the X-axis direction.
- the link pipe 80 is made of metal and has a plurality of pipes 801 to 805 connected to each other.
- the pipes 801 to 805 are connected to each other in this order.
- the arm-shaped pipe 802 can rotate about the central axis of the pipe 801 and each of the arm-shaped pipes 802 and 804 can rotate about the central axis of the pipe 803.
- the arm-shaped pipe 804 is rotatable about the central axis of the pipe 805.
- the adjacent arm-shaped pipes 802 and 804 are flexibly connected to each other via the pipe 803.
- the pipe 805 is connected to the lower part of the storage container 70.
- the arm responds to this movement.
- the angle formed by the shaped pipe 802 and the arm-shaped 804 changes. Further, the pipe 802 rotates about the central axis of the pipe 801, each of the pipes 802 and 804 rotates about the central axis of the pipe 803, and the pipe 804 rotates about the central axis of the pipe 805. ..
- the film forming apparatus 1 does not have a drive system for driving the link pipe 80, and the link pipe 80 is passively driven according to the slide movement of the film forming source 20 and the storage container 70.
- the film forming apparatus 1 may be provided with a drive system for forcibly driving the link pipe 80, and the film forming source 20 and the storage container 70 may be moved in the X-axis direction or the Y-axis direction by driving the link pipe 80.
- the transport mechanisms 95 and 96 function as rails for sliding the storage container 70.
- the inside of the pipe 801 is opened to the atmosphere, for example, through the opening 10h of the vacuum container 10.
- each of the pipes 802 to 805 connected to the pipe 801 is also open to the atmosphere.
- the link pipe 80 is connected to the storage container 70 inside the vacuum container 10, the storage container 70 connected to the link pipe 80 is also open to the atmosphere.
- the film thickness sensor 40 includes a crystal oscillator having a resonance frequency (f 0 : fundamental frequency).
- the film thickness sensor 40 is installed in the storage container 70 via the arm 401.
- the film thickness sensor 40 is provided, for example, at a position above the film thickness source 20 so as to avoid the space between the substrate 90 and the film thickness source 20.
- a film forming material 20 m discharged from the film forming source 20 is deposited on the crystal oscillator.
- the resonance frequency of the crystal unit with the film changes from f 0.
- the number of crystal oscillators is not limited to one, and a plurality of crystal oscillators may be arranged.
- the film thickness sensor 40 may be provided with a chopper (shutter) that selects a specific crystal oscillator from a plurality of crystal oscillators.
- the film thickness controller 41 is a so-called film thickness monitor.
- the film thickness controller 41 calculates the amount of the film-forming material 20 m emitted from the film-forming source 20 based on the change in the oscillation frequency (f 0) of the crystal oscillator due to the deposition of the film.
- the amount released corresponds to, for example, the film formation rate of the film deposited on the substrate 90, the thickness of the film deposited on the substrate 90, and the like.
- the film formation rate and film thickness of the film deposited on the substrate 90 calculated by the film thickness controller 41 are transmitted to the main controller 60.
- Data communication between the film thickness sensor 40 and the film thickness controller 41 is performed, for example, through the wiring 411 arranged inside the storage container 70.
- data communication between the film thickness controller 41 and the main controller 60 is performed, for example, through wiring (communication wiring) 601 arranged inside the link pipe 80 and inside the storage container 70.
- the arm 401 may have a cooling mechanism for circulating cooling water through the film thickness sensor 40. This makes the crystal unit less susceptible to heat radiation from the heating mechanism 30.
- the wiring 411 may be routed inside the arm 401 or may be routed outside the arm 401. When the wiring 411 is routed to the outside of the arm 401, a shield foil (for example, an aluminum foil) surrounding the wiring 411 and the arm 401 may be provided outside the arm 401.
- the temperature sensor 50 is a so-called thermocouple.
- the electromotive force generated in the thermocouple by the Seebeck effect is converted into temperature by the temperature controller 51, and the temperature of the film forming source 20 is measured.
- the temperature of the film forming source 20 calculated by the temperature controller 51 is transmitted to the main controller 60.
- Data communication between the temperature controller 51 and the main controller 60 is performed, for example, through wiring (communication wiring) 603 arranged inside the link pipe 80 and inside the storage container 70.
- the main controller 60 is provided outside the vacuum container 10.
- the main controller 60 controls the release amount of the film-forming material 20 m discharged from the film-forming source 20 based on the release amount of the film-forming material 20 m calculated by the film thickness controller 41.
- a wiring for supplying electric power to the motors for driving the transport mechanisms 95 and 96, and a film thickness sensor 40 is also possible to route wiring that supplies electric power or receives a signal from the film thickness sensor 40, wiring that supplies electric power to the motor that drives the chopper, wiring that supplies electric power to the motor that drives the shutter mechanism, and the like. .. Further, a water cooling pipe, an air pressure pipe, or the like may be arranged inside the link pipe 80.
- FIG. 4 is a schematic front view of the film forming apparatus according to the comparative example.
- the film thickness controller 41 is provided outside the vacuum container 10 instead of inside the storage container 70. Further, the wiring 411 connecting the film thickness controller 41 and the film thickness sensor 40 is routed inside the link pipe 80. The length of the wiring routed to the link pipe 80 may range from several meters to 10 meters.
- a high frequency voltage for resonating with the resonance frequency of the crystal unit with a film is superimposed on the wiring 411. Moreover, this high frequency voltage is an analog quantity. Therefore, the longer the length of the wiring 411, the more easily the wiring 411 is affected by an external factor (noise). This is because a plurality of wirings other than the wiring 411 are routed inside the link pipe 80.
- the link pipe 80 bends or vibrates in the X-axis direction.
- the impedance of the wiring 411 may not be constant for the high frequency voltage.
- FIG. 5 is a diagram showing an example of feedback control of the film forming source.
- SV rate is a target value (set value) of the vapor deposition rate
- MV rate is a control value of the film formation rate
- PV rate is a measured value of the film formation rate.
- P1 indicates, for example, a confluence point where noise is superimposed on the wiring 411 when noise as an external factor is generated.
- the target value (SVrate) of the film formation rate is set, the target value (SVrate) is sent to the heating mechanism 30 as a control signal (MVrate), and the heating mechanism 30 is heated based on the control signal. Then, the film forming source 20 is heated by the amount of heat received from the heating mechanism 30. Further, the film-forming material 20 m discharged from the film-forming source 20 is deposited on the crystal oscillator, and the film thickness controller 41, which has obtained a signal from the film thickness sensor 40, calculates the film-thickness rate (PVrate).
- PVrate film-thickness rate
- the control signal (MVrate) is corrected so as to be asymptotic to the target value (SVrate) by PID (Proportional Integral Differential) control. Will be done.
- PID Proportional Integral Differential
- the film forming speed calculated by the film thickness controller 41 may fluctuate.
- the PID-controlled control signal (MVrate) also fluctuates, and in the end, a situation occurs in which the amount of the film-forming material 20 m discharged from the film-forming source 20 is not accurately controlled.
- the film thickness controller 41 since the film thickness controller 41 is arranged inside the storage container 70, the wiring 411 is not routed inside the link pipe 80. As a result, noise is less likely to be superimposed on the wiring 411 during the operation of the film forming apparatus, or the impedance of the wiring 411 is less likely to fluctuate. As a result, the film thickness controller 41 calculates the film formation rate (PVrate) is stable, and the PID-controlled control signal (MVrate) is stable. As a result, the amount of the film-forming material 20m discharged from the film-forming source 20 is accurately controlled by the main controller 60.
- PVrate film formation rate
- MVrate PID-controlled control signal
- thermocouple is not routed inside the link pipe 80. As a result, noise is less likely to be superimposed on the thermocouple during operation of the film forming apparatus. As a result, the electromotive force generated in the thermocouple is stabilized, and the temperature of the film forming source 20 can be measured accurately. This works effectively for feedback control in which the temperature is set as the target value (SVrate).
- the communication between the film thickness controller 41 and the main controller 60 through the wiring 601 may be performed by digital communication. Further, communication may be performed by digital communication through the wiring 603 between the temperature controller 51 and the main controller 60. As a result, even if the wiring 601 or the wiring 603 is routed to the link pipe 80, the communication between the film thickness controller 41 and the main controller 60 or the communication between the temperature controller 51 and the main controller 60 is performed. It is not easily affected by noise, and the amount of the film-forming material 20m emitted from the film-forming source 20 is controlled more accurately.
- the storage container 70 is arranged inside the vacuum container 10, the storage container 70 is placed below the film forming source 20, and the storage container 70 is configured to be interlocked with the film forming source 20. Therefore, the enlargement of the film forming apparatus is avoided, and the structure becomes compact.
- FIG. 6 is a schematic front view of the film forming apparatus according to the first modification of the present embodiment.
- the main controller 60 is housed in the storage container 70.
- Wiring 601 and 603 are also housed in the storage container 70.
- the wirings 601 and 603 do not need to be routed to the link pipe 80, and the lengths of the wirings 601 and 603 are shorter, so that the communication between the film thickness controller 41 and the main controller 60 is performed.
- the communication between the temperature controller 51 and the main controller 60 is less susceptible to noise. As a result, the amount of the film-forming material 20m discharged from the film-forming source 20 is controlled more accurately.
- FIG. 7 is a schematic front view of the film forming apparatus according to the second modification of the present embodiment.
- the film thickness controller 41 is the film thickness controller unit 41u
- the main controller 60 is the main controller unit 60u
- the temperature controller 51 is the temperature controller unit 51u
- the controller module 71 in which each circuit unit is integrated is It is arranged inside the storage container 70.
- the controller module 71 is a circuit board in which the circuit units of the film thickness controller unit 41u, the main controller unit 60u, and the temperature controller unit 51u are integrated on the motherboard.
- the wirings 601 and 603 are formed as a line pattern in the motherboard. Further, since the outer circumference of the controller module 71 is surrounded by the storage container 70, the controller module 71 is less susceptible to noise from the outside of the storage container 70 due to the shielding effect of the storage container 70. Further, since the controller module 71 is a circuit board, the storage container 70 for accommodating the controller module 71 can be miniaturized.
- FIG. 8 is a schematic front view of the film forming apparatus according to the third modification of the present embodiment.
- the film thickness controller 41 is arranged so as to be adjacent to the film thickness sensor 40.
- the film thickness controller 41 is housed in a storage container 73 provided below the film thickness sensor 40.
- the storage container 73 communicates with the storage container 70 through, for example, a passage (not shown) provided inside the arm 401, and has the same pressure as the storage container 70 (for example, atmospheric pressure). That is, the storage containers 70 and 73 constitute a storage container having a higher pressure than the vacuum container 10.
- the wiring 411 when the wiring 411 is further shortened or when the film thickness sensor 40 is directly attached to the film thickness controller 41, the wiring 411 can be omitted. As a result, the wiring 411 is less susceptible to noise from the outside of the wiring 411, and the amount of the film-forming material 20m discharged from the film-forming source 20 is controlled more accurately.
- the wiring 601 may be digital wiring.
- the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications can be made.
- the film forming apparatus 1, 2 and 3 can be applied not only to the vapor deposition apparatus but also to the sputtering apparatus and the CVD apparatus.
- Each embodiment is not limited to an independent form and can be combined as technically possible as possible.
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- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Polarising Elements (AREA)
- Glass Compositions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
上記成膜源は、上記真空容器に収容される。
上記収容容器は、上記真空容器に収容され、上記真空容器内の圧力よりも高い圧力に維持することができる。
上記膜厚センサは、共振周波数を有する振動子を含み、上記膜厚センサには、上記振動子に上記成膜源から放出する成膜材料が堆積する。
上記膜厚コントローラは、上記収容容器に収容され、上記成膜材料の堆積による上記発振周波数の変化に基づいて、上記成膜源からの上記成膜材料の放出量を算出する。 In order to achieve the above object, the film forming apparatus according to one embodiment of the present invention includes a vacuum container, a film forming source, a storage container, a film thickness sensor, and a film thickness controller.
The film forming source is housed in the vacuum vessel.
The storage container is housed in the vacuum container and can be maintained at a pressure higher than the pressure in the vacuum container.
The film thickness sensor includes a vibrator having a resonance frequency, and a film forming material discharged from the film forming source is deposited on the film film sensor on the vibrator.
The film thickness controller is housed in the storage container, and calculates the amount of the film-forming material released from the film-forming source based on the change in the oscillation frequency due to the deposition of the film-forming material.
上記主コントローラは、上記真空容器外に設けられ、上記リンク配管は、上記真空容器の内部で上記収容容器に連結され、上記リンク配管の内部に、上記通信配線が配設されてもよい。 In the above-mentioned film forming apparatus, communication is performed between a link pipe having a plurality of pipes connected to each other and adjacent pipes flexibly connected to each other, the film thickness controller, and the main controller. Wiring may be further provided.
The main controller may be provided outside the vacuum container, the link pipe may be connected to the storage container inside the vacuum container, and the communication wiring may be arranged inside the link pipe.
10…真空容器
10h…開口
10…基板
20…成膜源
20m…成膜材料
21…噴出ノズル
30…加熱機構
40…膜厚センサ
41…膜厚コントローラ
41u…膜厚コントローラユニット
50…温度センサ
51…温度コントローラ
51u…温度コントローラユニット
60…主コントローラ
60u…主コントローラユニット
70、73…収容容器
71…コントローラモジュール
75…スペーサ
80…リンク配管
90…基板
90a…領域
92…基板支持機構
95、96…搬送機構
98…排気機構
401…アーム
411…配線
601、602、603…配線
801、802、803、804、805…配管 1, 2, 3, 4 ...
Claims (8)
- 真空容器と、
前記真空容器に収容された成膜源と、
前記真空容器に収容され、前記真空容器内の圧力よりも高い圧力に維持することが可能な収容容器と、
共振周波数を有する振動子を含み、前記振動子に前記成膜源から放出する成膜材料が堆積する膜厚センサと、
前記収容容器に収容され、前記成膜材料の堆積による前記発振周波数の変化に基づいて、前記成膜源からの前記成膜材料の放出量を算出する膜厚コントローラと
を具備する成膜装置。 With a vacuum container
The film-forming source housed in the vacuum vessel and
A storage container that is housed in the vacuum container and can be maintained at a pressure higher than the pressure inside the vacuum container.
A film thickness sensor that includes an oscillator having a resonance frequency and deposits a film-forming material emitted from the film-forming source on the oscillator.
A film thickness controller that is housed in the container and includes a film thickness controller that calculates the amount of the film film released from the film source based on a change in the oscillation frequency due to the deposition of the film film material. - 請求項1に記載された成膜装置であって、
前記膜厚コントローラが算出する前記放出量に基づいて、前記成膜源から放出する前記成膜材料の放出量を制御する主コントローラをさらに具備する
成膜装置。 The film forming apparatus according to claim 1.
A film forming apparatus further comprising a main controller that controls the emission amount of the film forming material discharged from the film formation source based on the emission amount calculated by the film thickness controller. - 請求項2に記載された成膜装置であって、
互いに連結された複数の配管を有し、隣り合う配管同士が屈曲可能に連結されたリンク配管と、
前記膜厚コントローラと、前記主コントローラとの間を通信させる通信配線と
をさらに具備し、
前記主コントローラは、前記真空容器外に設けられ、
前記リンク配管は、前記真空容器の内部で前記収容容器に連結され、
前記リンク配管の内部に、前記通信配線が配設された
成膜装置。 The film forming apparatus according to claim 2.
A link pipe that has multiple pipes connected to each other and the adjacent pipes are flexibly connected to each other.
Further, a communication wiring for communicating between the film thickness controller and the main controller is provided.
The main controller is provided outside the vacuum vessel.
The link pipe is connected to the storage container inside the vacuum container, and is connected to the storage container.
A film forming apparatus in which the communication wiring is arranged inside the link pipe. - 請求項3に記載された成膜装置であって、
前記膜厚コントローラと前記主コントローラとが前記通信配線を通じてデジタル通信により通信をする
成膜装置。 The film forming apparatus according to claim 3.
A film forming apparatus in which the film thickness controller and the main controller communicate with each other by digital communication through the communication wiring. - 請求項2に記載された成膜装置であって、
前記主コントローラが前記収容容器に収容された
成膜装置。 The film forming apparatus according to claim 2.
A film forming apparatus in which the main controller is housed in the storage container. - 請求項1~5のいずれか1つに記載された成膜装置であって、
前記収容容器の圧力が大気圧である
成膜装置。 The film forming apparatus according to any one of claims 1 to 5.
A film forming apparatus in which the pressure of the storage container is atmospheric pressure. - 請求項1~6のいずれか1つに記載された成膜装置であって、
前記成膜源は、前記真空容器の内部で前記収容容器に連動して移動する
成膜装置。 The film forming apparatus according to any one of claims 1 to 6.
The film forming source is a film forming apparatus that moves in conjunction with the containing container inside the vacuum container. - 請求項5~7のいずれか1つに記載された成膜装置であって、
前記膜厚コントローラと前記主コントローラとは、前記収容容器の内部にコントローラモジュールとして一体となって構成されている
成膜装置。 The film forming apparatus according to any one of claims 5 to 7.
The film thickness controller and the main controller are integrally formed as a controller module inside the storage container.
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JP2014070238A (en) * | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | Vacuum evaporation device, and evaporation method for the same |
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JP2014070238A (en) * | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | Vacuum evaporation device, and evaporation method for the same |
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