WO2021079589A1

WO2021079589A1 - Film forming device

Info

Publication number: WO2021079589A1
Application number: PCT/JP2020/030210
Authority: WO
Inventors: 元気関根; 裕利中尾
Original assignee: 株式会社アルバック
Priority date: 2019-10-21
Filing date: 2020-08-06
Publication date: 2021-04-29
Also published as: CN113302332B; JP7080354B2; KR20210089760A; TWI813898B; KR102615500B1; CN113302332A; TW202129036A; JPWO2021079589A1

Abstract

[Problem] To stably control a vapor deposition rate. [Solution] A film forming device includes a vacuum container, a film forming source, an accommodation container, a film thickness sensor, and a film thickness controller. The film forming source is accommodated in the vacuum vessel. The accommodation container is accommodated in the vacuum container and can be maintained at a pressure higher than the pressure in the vacuum container. The film thickness sensor includes a vibrator having a resonance frequency, and a film forming material released from the film forming source is deposited on the vibrator in the film thickness sensor. The film thickness controller is accommodated in the accommodation container, and calculates the amount of the film forming material released from the film forming source on the basis of a change in the oscillation frequency due to the deposition of the film forming material.

Description

Film deposition equipment

The present invention relates to a film forming apparatus.

One of the methods for controlling the vapor deposition rate of the film formed on the substrate in vacuum is to use a film thickness monitor. For example, in a vacuum vessel, a crystal oscillator type film thickness monitor is installed near the substrate, and feedback control is performed from the value detected by the film thickness monitor to obtain a desired vapor deposition rate (for example, Patent Document 1). reference).

Japanese Unexamined Patent Publication No. 2012-111974

However, if a steep external factor that disturbs the feedback control occurs in the film forming apparatus, the feedback control may not be able to follow the external factor, and a stable vapor deposition rate may not be obtained. In the film forming apparatus, it is desirable to construct a configuration that is not affected by such external factors.

In view of the above circumstances, an object of the present invention is to provide a film forming apparatus capable of controlling the vapor deposition rate more stably.

In order to achieve the above object, the film forming apparatus according to one embodiment of the present invention includes a vacuum container, a film forming source, a storage container, a film thickness sensor, and a film thickness controller.
The film forming source is housed in the vacuum vessel.
The storage container is housed in the vacuum container and can be maintained at a pressure higher than the pressure in the vacuum container.
The film thickness sensor includes a vibrator having a resonance frequency, and a film forming material discharged from the film forming source is deposited on the film film sensor on the vibrator.
The film thickness controller is housed in the storage container, and calculates the amount of the film-forming material released from the film-forming source based on the change in the oscillation frequency due to the deposition of the film-forming material.

With such a film forming apparatus, since the film thickness controller is housed in the accommodating container in the vacuum container, the vapor deposition rate in the film forming apparatus is controlled more stably.

The film forming apparatus may further include a main controller that controls the release amount of the film forming material discharged from the film forming source based on the release amount calculated by the film thickness controller.

With such a film forming apparatus, the deposition rate in the film forming apparatus is controlled more stably by the main controller.

In the above-mentioned film forming apparatus, communication is performed between a link pipe having a plurality of pipes connected to each other and adjacent pipes flexibly connected to each other, the film thickness controller, and the main controller. Wiring may be further provided.
The main controller may be provided outside the vacuum container, the link pipe may be connected to the storage container inside the vacuum container, and the communication wiring may be arranged inside the link pipe.

With such a film forming apparatus, even if a communication wiring for communicating between the film thickness controller and the main controller is arranged inside the link pipe, the vapor deposition rate in the film forming apparatus can be controlled more stably. Will be done.

In the film forming apparatus, the film thickness controller and the main controller may communicate with each other by digital communication through the communication wiring.

With such a film forming apparatus, the deposition rate in the film forming apparatus can be controlled more stably by using digital communication.

In the above-mentioned film forming apparatus, the above-mentioned main controller may be accommodated in the above-mentioned storage container.

With such a film forming apparatus, the main controller is accommodated in the storage container, and the vapor deposition rate in the film forming apparatus is controlled more stably.

In the above-mentioned film forming apparatus, the pressure of the above-mentioned storage container may be atmospheric pressure.

With such a film forming apparatus, the pressure of the accommodating container is atmospheric pressure, which simplifies the apparatus configuration.

In the film forming apparatus, the film forming source may move inside the vacuum vessel in conjunction with the accommodating container.

With such a film forming apparatus, it is possible to avoid increasing the size of the film forming apparatus.

In the above-mentioned film forming apparatus, the above-mentioned film thickness controller and the above-mentioned main controller may be integrally configured as a controller module inside the above-mentioned storage container.

With such a film forming apparatus, the vapor deposition rate in the film forming apparatus is controlled more stably, and the size of the storage container is realized.

As described above, according to the present invention, there is provided a film forming apparatus capable of controlling the vapor deposition rate more stably.

It is a schematic top view of the film forming apparatus of this embodiment. It is a schematic front view of the film forming apparatus of this embodiment. It is a schematic top view of the film forming apparatus of this embodiment. It is a schematic front view of the film forming apparatus which concerns on a comparative example. It is a figure which shows an example of the feedback control of a film-forming source. It is a schematic front view of the film forming apparatus which concerns on the modification 1 of this embodiment. It is a schematic front view of the film forming apparatus which concerns on the modification 2 of this embodiment. It is a schematic front view of the film forming apparatus which concerns on the modification 3 of this embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. XYZ axis coordinates may be introduced in each drawing. Further, the same member or a member having the same function may be designated by the same reference numeral, and the description may be omitted as appropriate after the description of the member.

FIG. 1 is a schematic top view of the film forming apparatus of this embodiment. FIG. 2 is a schematic front view of the film forming apparatus of this embodiment. FIG. 1 shows a state in which the cross section along the line B1-B2 of FIG. 2 is viewed in the direction of the arrow, and FIG. 2 shows a state in which the cross section along the line A1-A2 in FIG. Has been done. Further, FIG. 2 shows a film forming apparatus 1 in a region where the film forming source 20 is located.

The film forming apparatus 1 shown in FIGS. 1 and 2 is linked to a vacuum vessel 10, a film forming source 20, a heating mechanism 30, a film thickness sensor 40, a temperature sensor 50, a main controller 60, and a storage container 70. It includes a pipe 80, a substrate support mechanism 92, a transport mechanism 95, a transport mechanism 96, and an exhaust mechanism 98.

The vacuum container 10 is a container that can maintain a decompressed state. The gas inside the vacuum container 10 is exhausted by the exhaust mechanism 98. When the vacuum vessel 10 is visually observed in the direction from the substrate support mechanism 92 toward the film forming source 20 (hereinafter, the Z-axis direction), the planar shape is, for example, a rectangular shape.

The vacuum container 10 includes a film forming source 20, a film thickness sensor 40, a film thickness controller 41, a temperature sensor 50, a temperature controller 51, a main controller 60, a storage container 70, a link pipe 80, a substrate support mechanism 92, and a transfer mechanism 95. Accommodates 96 mag. The vacuum vessel 10 may be provided with a gas supply mechanism capable of supplying gas. Further, the vacuum vessel 10 may be equipped with a pressure gauge for measuring the pressure inside the vacuum vessel 10.

The film forming source 20 is filled with a film forming material. The film forming source 20 is a vapor deposition source in which the film forming material 20 m evaporates toward the substrate 90. The film forming source 20 extends in the uniaxial direction (Y-axis direction in the figure) as the longitudinal direction. When the film forming source 20 is viewed from above in the Z-axis direction, its outer shape is, for example, a rectangle. The film forming material 20 m is, for example, an organic material, a metal, or the like.

The film forming source 20 is provided with a plurality of ejection nozzles 21. Each of the plurality of ejection nozzles 21 is arranged in a row in the longitudinal direction (X-axis direction) of the film forming source 20 at a predetermined interval. The film-forming material 20 m is ejected from each of the plurality of ejection nozzles 21. For example, when the film forming source 20 is heated by the heating mechanism 30, the steam of the film forming material 20 m evaporates from the ejection nozzle 21 toward the substrate 90.

The heating mechanism 30 heats the film forming source 20. The heating mechanism 30 faces the side portion of the film forming source 20. When the heating mechanism 30 is viewed from the Z-axis direction, the heating mechanism 30 surrounds the film forming source 20. The heating mechanism 30 is, for example, an induction heating type or resistance heating type heating mechanism. The heating mechanism 30 is controlled by the main controller 60. For example, wiring (conductor) 602 is routed from the main controller 60 to the heating mechanism 30. The wiring 602 is arranged inside the link pipe 80 and inside the storage container 70.

The storage container 70 is made of metal, and can maintain a pressure higher than the pressure inside the vacuum container 10 inside the vacuum container 10. For example, the pressure inside the storage container 70 is atmospheric pressure. By opening the inside of the storage container 70 to the atmosphere, an exhaust system for evacuating the storage container 70 in the vacuum container 10 becomes unnecessary.

The storage container 70 is arranged in line with the film forming source 20 in the Z-axis direction, and is provided below, for example, the film forming source 20. By arranging the storage container 70 and the film forming source 20 in the Z-axis direction, it is possible to suppress an increase in the size of the apparatus in the X-axis direction or the Y-axis direction, resulting in a compact configuration. A spacer 75 is provided between the storage container 70 and the film forming source 20.

The storage container 70 extends in the uniaxial direction (Y-axis direction in the figure) as the longitudinal direction. When the storage container 70 is viewed from above in the Z-axis direction, its outer shape is, for example, a rectangle. In the example of FIG. 2, the storage container 70 houses, for example, the film thickness controller 41 and the temperature controller 51.

A pair of transport mechanisms 95 are provided under the storage container 70. The pair of transport mechanisms 95 extend in the X-axis direction. Each of the pair of transport mechanisms 95 includes, for example, a moving mechanism such as a roller mechanism and a traction mechanism. As a result, the storage container 70 slides in the direction in which the transport mechanism 95 extends (X-axis direction). As a result, the film forming source 20 also slides in the vacuum container 10 in the X-axis direction so as to be interlocked with the storage container 70. That is, in the film forming apparatus 1, the film forming material 20 m is deposited on the substrate 90 while the substrate 10 and the film forming source 20 move relative to each other in the X-axis direction. A shutter mechanism may be provided between the substrate 90 and the film forming source 20 to shield the film from incident on the substrate 90 of the film forming material 20 m.

For example, FIG. 3 is a schematic top view of the film forming apparatus of the present embodiment, and FIG. 3 shows a state after the film forming source 20 and the storage container 70 are moved to the side opposite to the position of FIG. It is shown.

Further, a pair of transport mechanisms 96 are provided under the pair of transport mechanisms 95. The pair of transport mechanisms 96 extend in the Y-axis direction intersecting the X-axis direction. Each of the pair of transport mechanisms 96 includes, for example, a moving mechanism such as a roller mechanism and a traction mechanism. As a result, the storage container 70 can be slid and moved in the direction in which the transport mechanism 96 extends (Y-axis direction) in addition to the X-axis direction.

For example, the vacuum container 10 is provided with a region 90a into which a substrate other than the substrate 90 is carried. After the film forming process on the substrate 90 is completed, the film can be formed on another substrate in the region 90a. In this case as well, the film-forming material 20 m is deposited on the other substrate while the film-forming source 20 and the film-forming source 20 move relative to each other in the X-axis direction.

The link pipe 80 is made of metal and has a plurality of pipes 801 to 805 connected to each other. The pipes 801 to 805 are connected to each other in this order. Among the pipes 801 to 805, the arm-shaped pipe 802 can rotate about the central axis of the pipe 801 and each of the arm-shaped

pipes

802 and 804 can rotate about the central axis of the pipe 803. The arm-shaped pipe 804 is rotatable about the central axis of the pipe 805. Further, among the pipes 801 to 805, the adjacent arm-shaped

pipes

802 and 804 are flexibly connected to each other via the pipe 803. The pipe 805 is connected to the lower part of the storage container 70.

For example, when the film forming source 20 is viewed from the Z-axis direction during film formation (FIGS. 1 and 3), when the film forming source 20 and the substrate 90 move relative to each other in the X-axis direction, the arm responds to this movement. The angle formed by the shaped pipe 802 and the arm-shaped 804 changes. Further, the pipe 802 rotates about the central axis of the pipe 801, each of the

pipes

802 and 804 rotates about the central axis of the pipe 803, and the pipe 804 rotates about the central axis of the pipe 805. ..

The film forming apparatus 1 does not have a drive system for driving the link pipe 80, and the link pipe 80 is passively driven according to the slide movement of the film forming source 20 and the storage container 70. Alternatively, the film forming apparatus 1 may be provided with a drive system for forcibly driving the link pipe 80, and the film forming source 20 and the storage container 70 may be moved in the X-axis direction or the Y-axis direction by driving the link pipe 80. Good. In this case, the

transport mechanisms

95 and 96 function as rails for sliding the storage container 70.

The inside of the pipe 801 is opened to the atmosphere, for example, through the opening 10h of the vacuum container 10. As a result, each of the pipes 802 to 805 connected to the pipe 801 is also open to the atmosphere. Further, since the link pipe 80 is connected to the storage container 70 inside the vacuum container 10, the storage container 70 connected to the link pipe 80 is also open to the atmosphere.

The film thickness sensor 40 includes _{a crystal oscillator having a resonance frequency (f 0} : fundamental frequency). The film thickness sensor 40 is installed in the storage container 70 via the arm 401. The film thickness sensor 40 is provided, for example, at a position above the film thickness source 20 so as to avoid the space between the substrate 90 and the film thickness source 20. A film forming material 20 m discharged from the film forming source 20 is deposited on the crystal oscillator. As a result, the resonance frequency of the crystal unit with the film changes from _{f 0.} The number of crystal oscillators is not limited to one, and a plurality of crystal oscillators may be arranged. In this case, the film thickness sensor 40 may be provided with a chopper (shutter) that selects a specific crystal oscillator from a plurality of crystal oscillators.

The film thickness controller 41 is a so-called film thickness monitor. The film thickness controller 41 calculates the amount of the film-forming material 20 m emitted from the film-forming source 20 based on the change in _{the oscillation frequency (f 0) of the crystal oscillator due to the deposition of the film.} Here, the amount released corresponds to, for example, the film formation rate of the film deposited on the substrate 90, the thickness of the film deposited on the substrate 90, and the like.

The film formation rate and film thickness of the film deposited on the substrate 90 calculated by the film thickness controller 41 are transmitted to the main controller 60. Data communication between the film thickness sensor 40 and the film thickness controller 41 is performed, for example, through the wiring 411 arranged inside the storage container 70. Further, data communication between the film thickness controller 41 and the main controller 60 is performed, for example, through wiring (communication wiring) 601 arranged inside the link pipe 80 and inside the storage container 70.

The arm 401 may have a cooling mechanism for circulating cooling water through the film thickness sensor 40. This makes the crystal unit less susceptible to heat radiation from the heating mechanism 30. The wiring 411 may be routed inside the arm 401 or may be routed outside the arm 401. When the wiring 411 is routed to the outside of the arm 401, a shield foil (for example, an aluminum foil) surrounding the wiring 411 and the arm 401 may be provided outside the arm 401.

The temperature sensor 50 is a so-called thermocouple. The electromotive force generated in the thermocouple by the Seebeck effect is converted into temperature by the temperature controller 51, and the temperature of the film forming source 20 is measured. The temperature of the film forming source 20 calculated by the temperature controller 51 is transmitted to the main controller 60. Data communication between the temperature controller 51 and the main controller 60 is performed, for example, through wiring (communication wiring) 603 arranged inside the link pipe 80 and inside the storage container 70.

The main controller 60 is provided outside the vacuum container 10. The main controller 60 controls the release amount of the film-forming material 20 m discharged from the film-forming source 20 based on the release amount of the film-forming material 20 m calculated by the film thickness controller 41.

Inside the link pipe 80, in addition to the wirings 601 to 603, for example, although not shown, a wiring for supplying electric power to the motors for driving the

transport mechanisms

95 and 96, and a film thickness sensor 40. It is also possible to route wiring that supplies electric power or receives a signal from the film thickness sensor 40, wiring that supplies electric power to the motor that drives the chopper, wiring that supplies electric power to the motor that drives the shutter mechanism, and the like. .. Further, a water cooling pipe, an air pressure pipe, or the like may be arranged inside the link pipe 80.

FIG. 4 is a schematic front view of the film forming apparatus according to the comparative example.

In the comparative example, the film thickness controller 41 is provided outside the vacuum container 10 instead of inside the storage container 70. Further, the wiring 411 connecting the film thickness controller 41 and the film thickness sensor 40 is routed inside the link pipe 80. The length of the wiring routed to the link pipe 80 may range from several meters to 10 meters.

A high frequency voltage for resonating with the resonance frequency of the crystal unit with a film is superimposed on the wiring 411. Moreover, this high frequency voltage is an analog quantity. Therefore, the longer the length of the wiring 411, the more easily the wiring 411 is affected by an external factor (noise). This is because a plurality of wirings other than the wiring 411 are routed inside the link pipe 80.

Further, during the operation of the film forming apparatus, the link pipe 80 bends or vibrates in the X-axis direction. As a result, the impedance of the wiring 411 may not be constant for the high frequency voltage.

For example, FIG. 5 is a diagram showing an example of feedback control of the film forming source.

In the figure, SV rate is a target value (set value) of the vapor deposition rate, MV rate is a control value of the film formation rate, and PV rate is a measured value of the film formation rate. P1 indicates, for example, a confluence point where noise is superimposed on the wiring 411 when noise as an external factor is generated.

When the target value (SVrate) of the film formation rate is set, the target value (SVrate) is sent to the heating mechanism 30 as a control signal (MVrate), and the heating mechanism 30 is heated based on the control signal. Then, the film forming source 20 is heated by the amount of heat received from the heating mechanism 30. Further, the film-forming material 20 m discharged from the film-forming source 20 is deposited on the crystal oscillator, and the film thickness controller 41, which has obtained a signal from the film thickness sensor 40, calculates the film-thickness rate (PVrate).

At this time, if there is a difference between the target value (SVrate) and the film formation rate (PVlate), the control signal (MVrate) is corrected so as to be asymptotic to the target value (SVrate) by PID (Proportional Integral Differential) control. Will be done. These feedback controls are performed by the main controller 60.

However, as in the comparative example, if noise from other wiring is superimposed on the wiring 411 or the impedance of the wiring 411 fluctuates during the operation of the film forming apparatus, the film forming speed calculated by the film thickness controller 41 ( PVrate) may fluctuate. As a result, the PID-controlled control signal (MVrate) also fluctuates, and in the end, a situation occurs in which the amount of the film-forming material 20 m discharged from the film-forming source 20 is not accurately controlled.

On the other hand, in the film thickness controller 1 of the present embodiment, since the film thickness controller 41 is arranged inside the storage container 70, the wiring 411 is not routed inside the link pipe 80. As a result, noise is less likely to be superimposed on the wiring 411 during the operation of the film forming apparatus, or the impedance of the wiring 411 is less likely to fluctuate. As a result, the film thickness controller 41 calculates the film formation rate (PVrate) is stable, and the PID-controlled control signal (MVrate) is stable. As a result, the amount of the film-forming material 20m discharged from the film-forming source 20 is accurately controlled by the main controller 60.

Further, in the film forming apparatus 1, since the temperature controller 51 is housed in the storage container 70, the thermocouple is not routed inside the link pipe 80. As a result, noise is less likely to be superimposed on the thermocouple during operation of the film forming apparatus. As a result, the electromotive force generated in the thermocouple is stabilized, and the temperature of the film forming source 20 can be measured accurately. This works effectively for feedback control in which the temperature is set as the target value (SVrate).

Further, the communication between the film thickness controller 41 and the main controller 60 through the wiring 601 may be performed by digital communication. Further, communication may be performed by digital communication through the wiring 603 between the temperature controller 51 and the main controller 60. As a result, even if the wiring 601 or the wiring 603 is routed to the link pipe 80, the communication between the film thickness controller 41 and the main controller 60 or the communication between the temperature controller 51 and the main controller 60 is performed. It is not easily affected by noise, and the amount of the film-forming material 20m emitted from the film-forming source 20 is controlled more accurately.

Further, even if the storage container 70 is arranged inside the vacuum container 10, the storage container 70 is placed below the film forming source 20, and the storage container 70 is configured to be interlocked with the film forming source 20. Therefore, the enlargement of the film forming apparatus is avoided, and the structure becomes compact.

(Modification example 1)

FIG. 6 is a schematic front view of the film forming apparatus according to the first modification of the present embodiment.

In the film forming apparatus 2, the main controller 60 is housed in the storage container 70.

Wiring

601 and 603 are also housed in the storage container 70.

With such a configuration, the

wirings

601 and 603 do not need to be routed to the link pipe 80, and the lengths of the

wirings

601 and 603 are shorter, so that the communication between the film thickness controller 41 and the main controller 60 is performed. Alternatively, the communication between the temperature controller 51 and the main controller 60 is less susceptible to noise. As a result, the amount of the film-forming material 20m discharged from the film-forming source 20 is controlled more accurately.

(Modification example 2)

FIG. 7 is a schematic front view of the film forming apparatus according to the second modification of the present embodiment.

In the film forming apparatus 3, the film thickness controller 41 is the film thickness controller unit 41u, the main controller 60 is the main controller unit 60u, the temperature controller 51 is the temperature controller unit 51u, and the controller module 71 in which each circuit unit is integrated is It is arranged inside the storage container 70.

The controller module 71 is a circuit board in which the circuit units of the film thickness controller unit 41u, the main controller unit 60u, and the temperature controller unit 51u are integrated on the motherboard.

According to such a configuration, the

wirings

601 and 603 are formed as a line pattern in the motherboard. Further, since the outer circumference of the controller module 71 is surrounded by the storage container 70, the controller module 71 is less susceptible to noise from the outside of the storage container 70 due to the shielding effect of the storage container 70. Further, since the controller module 71 is a circuit board, the storage container 70 for accommodating the controller module 71 can be miniaturized.

(Modification example 3)

FIG. 8 is a schematic front view of the film forming apparatus according to the third modification of the present embodiment.

In the film forming apparatus 4, the film thickness controller 41 is arranged so as to be adjacent to the film thickness sensor 40. For example, the film thickness controller 41 is housed in a storage container 73 provided below the film thickness sensor 40. The storage container 73 communicates with the storage container 70 through, for example, a passage (not shown) provided inside the arm 401, and has the same pressure as the storage container 70 (for example, atmospheric pressure). That is, the

storage containers

70 and 73 constitute a storage container having a higher pressure than the vacuum container 10.

According to such a configuration, when the wiring 411 is further shortened or when the film thickness sensor 40 is directly attached to the film thickness controller 41, the wiring 411 can be omitted. As a result, the wiring 411 is less susceptible to noise from the outside of the wiring 411, and the amount of the film-forming material 20m discharged from the film-forming source 20 is controlled more accurately. In the film forming apparatus 4, the wiring 601 may be digital wiring.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications can be made. For example, the

film forming apparatus

1, 2 and 3 can be applied not only to the vapor deposition apparatus but also to the sputtering apparatus and the CVD apparatus. Each embodiment is not limited to an independent form and can be combined as technically possible as possible.

1, 2, 3, 4 ... Film formation device 10 ... Vacuum container 10h ... Opening 10 ... Substrate 20 ... Film formation source 20m ... Film formation material 21 ... Ejection nozzle 30 ... Heating mechanism 40 ... Film sensor 41 ... Film controller 41u ... Film film controller unit 50 ... Temperature sensor 51 ... Temperature controller 51u ... Temperature controller unit 60 ... Main controller 60u ...

Main controller unit

70, 73 ... Storage container 71 ... Controller module 75 ... Spacer 80 ... Link piping 90 ... Board 90a ... Area 92 ...

Board support mechanism

95, 96 ... Conveyance mechanism 98 ... Exhaust mechanism 401 ... Arm 411 ...

Wiring

601, 602, 603 ...

Wiring

801, 802, 803, 804, 805 ... Piping

Claims

With a vacuum container
The film-forming source housed in the vacuum vessel and
A storage container that is housed in the vacuum container and can be maintained at a pressure higher than the pressure inside the vacuum container.
A film thickness sensor that includes an oscillator having a resonance frequency and deposits a film-forming material emitted from the film-forming source on the oscillator.
A film thickness controller that is housed in the container and includes a film thickness controller that calculates the amount of the film film released from the film source based on a change in the oscillation frequency due to the deposition of the film film material.
The film forming apparatus according to claim 1.
A film forming apparatus further comprising a main controller that controls the emission amount of the film forming material discharged from the film formation source based on the emission amount calculated by the film thickness controller.
The film forming apparatus according to claim 2.
A link pipe that has multiple pipes connected to each other and the adjacent pipes are flexibly connected to each other.
Further, a communication wiring for communicating between the film thickness controller and the main controller is provided.
The main controller is provided outside the vacuum vessel.
The link pipe is connected to the storage container inside the vacuum container, and is connected to the storage container.
A film forming apparatus in which the communication wiring is arranged inside the link pipe.
The film forming apparatus according to claim 3.
A film forming apparatus in which the film thickness controller and the main controller communicate with each other by digital communication through the communication wiring.
The film forming apparatus according to claim 2.
A film forming apparatus in which the main controller is housed in the storage container.
The film forming apparatus according to any one of claims 1 to 5.
A film forming apparatus in which the pressure of the storage container is atmospheric pressure.
The film forming apparatus according to any one of claims 1 to 6.
The film forming source is a film forming apparatus that moves in conjunction with the containing container inside the vacuum container.
The film forming apparatus according to any one of claims 5 to 7.
The film thickness controller and the main controller are integrally formed as a controller module inside the storage container.