CN113302332B - Film forming apparatus - Google Patents
Film forming apparatus Download PDFInfo
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- CN113302332B CN113302332B CN202080007249.9A CN202080007249A CN113302332B CN 113302332 B CN113302332 B CN 113302332B CN 202080007249 A CN202080007249 A CN 202080007249A CN 113302332 B CN113302332 B CN 113302332B
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- film forming
- film
- forming apparatus
- container
- film thickness
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- 239000000463 material Substances 0.000 claims abstract description 30
- 230000008859 change Effects 0.000 claims abstract description 4
- 238000004891 communication Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 abstract description 12
- 230000010355 oscillation Effects 0.000 abstract description 3
- 238000009825 accumulation Methods 0.000 abstract description 2
- 230000007246 mechanism Effects 0.000 description 41
- 239000000758 substrate Substances 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Abstract
The present invention relates to stable vapor deposition rate control. The film forming apparatus of the present invention includes a vacuum chamber, a film forming source, a housing chamber, a film thickness sensor, and a film thickness controller. The film forming source is accommodated in the vacuum container. The storage container is stored in the vacuum container, and can maintain a pressure higher than the pressure in the vacuum container. The film thickness sensor includes an oscillator having a resonance frequency, and a film forming material released from the film forming source is deposited on the oscillator. The film thickness controller is accommodated in the accommodating container, and calculates a release amount of the film forming material released from the film forming source based on a change in the oscillation frequency caused by accumulation of the film forming material.
Description
Technical Field
The present invention relates to a film forming apparatus.
Background
One method of controlling the deposition rate of a film formed on a substrate in vacuum is to use a film thickness monitor. For example, a crystal oscillator type film thickness monitor is provided near a substrate in a vacuum vessel, and feedback control is performed based on a value detected by the film thickness monitor to obtain a desired vapor deposition rate (for example, refer to patent document 1).
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2012-111974.
Disclosure of Invention
Problems to be solved by the invention
However, when a sudden external factor disturbing the feedback control occurs in the film forming apparatus, the feedback control may not follow the external factor, and a stable vapor deposition rate may not be obtained. In the film forming apparatus, it is preferable to construct a structure that is not affected by such external factors.
In view of the above, an object of the present invention is to provide a film forming apparatus capable of controlling a vapor deposition rate more stably.
Solution for solving the problem
In order to achieve the above object, a film forming apparatus according to an embodiment of the present invention includes a vacuum chamber, a film forming source, a storage chamber, a film thickness sensor, and a film thickness controller.
The film forming source is accommodated in the vacuum container.
The storage container is stored in the vacuum container, and can maintain a pressure higher than the pressure in the vacuum container.
The film thickness sensor includes an oscillator having a resonance frequency, and a film forming material released from the film forming source is deposited on the oscillator.
The film thickness controller is accommodated in the accommodating container, and calculates a release amount of the film forming material released from the film forming source based on a change in the oscillation frequency caused by accumulation of the film forming material.
According to such a film forming apparatus, the film thickness controller is accommodated in the accommodating container in the vacuum container, so that the vapor deposition rate in the film forming apparatus can be controlled more stably.
The film forming apparatus may further include: and a main controller that controls a release amount of the film forming material released from the film forming source based on the release amount calculated by the film thickness controller.
According to such a film forming apparatus, the main controller can control the vapor deposition rate of the film forming apparatus more stably.
The film forming apparatus may further include: a connecting pipe having a plurality of pipes connected to each other, adjacent pipes being connected to each other so as to be bendable; and a communication wiring that communicates the film thickness controller with the main controller.
The main controller may be disposed outside the vacuum container, the connection pipe may be connected to the housing container in the vacuum container, and the communication wiring may be disposed in the connection pipe.
According to such a film forming apparatus, even if a communication wiring for communicating the film thickness controller with the main controller is disposed in the connection pipe, the vapor deposition speed of the film forming apparatus can be controlled more stably.
In the film forming apparatus, the film thickness controller and the main controller may communicate with each other by digital communication through the communication wiring.
According to such a film forming apparatus, the deposition rate of the film forming apparatus is controlled more stably by using digital communication.
In the film forming apparatus, the main controller may be accommodated in the accommodating container.
According to such a film forming apparatus, the main controller is accommodated in the accommodating container, and the vapor deposition speed of the film forming apparatus is controlled more stably.
In the film forming apparatus, the pressure of the storage container may be atmospheric pressure.
According to such a film forming apparatus, since the pressure of the storage container is atmospheric pressure, the apparatus structure becomes simple.
In the film forming apparatus, the film forming source may be movable in conjunction with the storage container in the vacuum container.
According to such a film forming apparatus, an increase in size of the film forming apparatus is avoided.
In the film forming apparatus, the film thickness controller and the main controller may be integrally formed as a controller module inside the storage container.
According to such a film forming apparatus, the vapor deposition speed of the film forming apparatus is controlled more stably, and the size of the storage container is reduced.
Effects of the invention
As described above, according to the present invention, a film forming apparatus capable of controlling a vapor deposition rate more stably can be provided.
Drawings
Fig. 1 is a schematic plan view of the film forming apparatus according to the present embodiment.
Fig. 2 is a schematic front view of the film forming apparatus according to the present embodiment.
Fig. 3 is a schematic plan view of the film forming apparatus according to the present embodiment.
Fig. 4 is a schematic front view of a film forming apparatus according to a comparative example.
Fig. 5 is a diagram showing an example of feedback control of a film formation source.
Fig. 6 is a schematic front view of a film forming apparatus according to modification 1 of the present embodiment.
Fig. 7 is a schematic front view of a film forming apparatus according to modification 2 of the present embodiment.
Fig. 8 is a schematic front view of a film forming apparatus according to modification 3 of the present embodiment.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each drawing, XYZ axis coordinates are sometimes introduced. In addition, the same members or members having the same functions may be denoted by the same reference numerals, and description thereof may be omitted appropriately after the description.
Fig. 1 is a schematic plan view of the film forming apparatus according to the present embodiment. Fig. 2 is a schematic front view of the film forming apparatus according to the present embodiment. Fig. 1 shows a state of a cross section along a line B1-B2 of fig. 2 viewed in the direction of an arrow, and fig. 2 shows a state of a cross section along a line A1-A2 of fig. 1 viewed in the direction of an arrow. Fig. 2 shows the film forming apparatus 1 in the region where the film forming source 20 is located.
The film forming apparatus 1 shown in fig. 1 and 2 includes a vacuum chamber 10, a film forming source 20, a heating mechanism 30, a film thickness sensor 40, a temperature sensor 50, a main controller 60, a storage container 70, a connecting pipe 80, a substrate supporting mechanism 92, a carrying mechanism 95, a carrying mechanism 96, and an exhausting mechanism 98.
The vacuum vessel 10 is a vessel capable of maintaining a depressurized state. The vacuum vessel 10 discharges the gas inside through the gas discharge mechanism 98. The planar shape of the vacuum chamber 10 when viewed in the direction of the film formation source 20 (hereinafter referred to as the Z-axis direction) from the substrate support mechanism 92 is, for example, rectangular.
The vacuum chamber 10 accommodates a film forming source 20, a film thickness sensor 40, a film thickness controller 41, a temperature sensor 50, a temperature controller 51, a main controller 60, a container 70, a connection pipe 80, a substrate supporting mechanism 92, and conveying mechanisms 95 and 96. A gas supply mechanism capable of supplying a gas may be mounted to the vacuum vessel 10. Further, a pressure gauge for measuring the internal pressure of the vacuum vessel 10 may be mounted.
The film forming source 20 is filled with a film forming material. The film forming source 20 is a vapor deposition source that evaporates the film forming material 20m onto the substrate 90. The film formation source 20 extends in a uniaxial direction (Y-axis direction in the figure) as a longitudinal direction. When the film forming source 20 is viewed from the Z-axis direction, the film forming source has a rectangular shape, for example. The film-forming material 20m is, for example, an organic material, a metal, or the like.
The film forming source 20 is provided with a plurality of nozzles 21. The plurality of nozzles 21 are arranged in a row in the longitudinal direction (X-axis direction) of the film forming source 20 at predetermined intervals. The film-forming materials 20m are ejected from the plurality of nozzles 21, respectively. For example, when the film forming source 20 is heated by the heating mechanism 30, vapor of the film forming material 20m evaporates from the nozzle 21 toward the substrate 90.
The heating mechanism 30 heats the film forming source 20. The heating mechanism 30 faces the side of the film forming source 20. When the heating mechanism 30 is viewed from the Z-axis direction, the heating mechanism 30 surrounds the film formation source 20. The heating means 30 is, for example, an induction heating system or a resistance heating system. The heating mechanism 30 is controlled by a main controller 60. For example, wiring (wires) 602 is led from the main controller 60 to the heating mechanism 30. The wiring 602 is disposed inside the connection pipe 80 and inside the housing container 70.
The storage container 70 is made of metal, and can maintain a pressure higher than the pressure in the vacuum container 10 inside the vacuum container 10. For example, the pressure inside the storage container 70 is atmospheric pressure. By opening the interior of the storage container 70 to the atmosphere, an exhaust system for vacuum-exhausting the storage container 70 in the vacuum container 10 is not required.
The storage container 70 is disposed in parallel with the film formation source 20 in the Z-axis direction, for example, below the film formation source 20. By arranging the storage container 70 and the film forming source 20 in the Z-axis direction, the device is prevented from being enlarged in the X-axis direction or the Y-axis direction, and a compact structure is formed. A spacer 75 is provided between the storage container 70 and the film forming source 20.
The storage container 70 extends in the uniaxial direction (Y-axis direction in the figure) as the longitudinal direction. When the housing container 70 is viewed in plan in the Z-axis direction, the outer shape thereof is rectangular, for example. In the example of fig. 2, the storage container 70 stores, for example, the film thickness controller 41 and the temperature controller 51.
A pair of conveying mechanisms 95 are provided below the storage container 70. The pair of carrying mechanisms 95 extends in the X-axis direction. The pair of conveying mechanisms 95 each have a moving mechanism such as a roller mechanism or a traction mechanism. Thereby, the storage container 70 is slidingly moved in the direction in which the transport mechanism 95 extends (X-axis direction). As a result, the film forming source 20 also slides in the X-axis direction so as to be linked to the storage container 70 inside the vacuum container 10. That is, in the film forming apparatus 1, the film forming material 20m is deposited on the substrate 90 while relatively moving the substrate 10 and the film forming source 20 in the X-axis direction. A shielding mechanism for shielding the film formation material 20m from entering the substrate 90 may be provided between the substrate 90 and the film formation source 20.
For example, fig. 3 is a schematic plan view of the film forming apparatus according to the present embodiment, and fig. 3 shows a state after the film forming source 20 and the storage container 70 are moved to the opposite side to the position of fig. 1.
A pair of conveying mechanisms 96 is provided below the pair of conveying mechanisms 95. The pair of carrying mechanisms 96 extends in the Y-axis direction intersecting the X-axis direction. The pair of conveying mechanisms 96 each have a moving mechanism such as a roller mechanism or a traction mechanism. As a result, the storage container 70 can slide in the direction in which the transport mechanism 96 extends (Y-axis direction) in addition to the X-axis direction.
For example, a region 90a for carrying a substrate other than the substrate 90 is provided in the vacuum chamber 10. After the film formation process on the substrate 90 is completed, another substrate can be formed in the region 90a. In this case, the film formation material 20m is deposited on the other substrate while relatively moving the other substrate and the film formation source 20 in the X-axis direction.
The connecting pipe 80 is made of metal, and has a plurality of pipes 801 to 805 connected to each other. The pipes 801 to 805 are connected to each other in this order. Among the pipes 801 to 805, the arm-shaped pipe 802 can rotate around the central axis of the pipe 801, the arm-shaped pipes 802 and 804 can rotate around the central axis of the pipe 803, and the arm-shaped pipe 804 can rotate around the central axis of the pipe 805. Among the pipes 801 to 805, adjacent arm-shaped pipes 802 and 804 are connected to each other so as to be bendable via a pipe 803. The pipe 805 is connected to the lower portion of the storage container 70.
For example, in the case where the film formation source 20 is viewed from the Z axis direction during film formation (fig. 1 and 3), when the film formation source 20 and the substrate 90 are moved relative to each other in the X axis direction, the angle formed by the arm-shaped pipe 802 and the arm-shaped pipe 804 changes according to the movement. Further, the pipe 802 rotates around the central axis of the pipe 801, the pipes 802 and 804 rotate around the central axis of the pipe 803, and the pipe 804 rotates around the central axis of the pipe 805.
The film forming apparatus 1 does not have a drive system for driving the connection pipe 80, and the connection pipe 80 is driven passively according to the sliding movement of the film forming source 20 and the storage container 70. Alternatively, a drive system for forcibly driving the connection pipe 80 may be additionally provided to the film forming apparatus 1, and the film forming source 20 and the storage container 70 may be moved in the X-axis direction or the Y-axis direction by driving the connection pipe 80. In this case, the conveyance mechanisms 95 and 96 function as rails for sliding the storage container 70.
The inside of the pipe 801 is opened to the atmosphere, for example, through the opening 10h of the vacuum vessel 10. Thus, the pipes 802 to 805 connected to the pipe 801 are also opened to the atmosphere. Further, since the inside of the vacuum vessel 10 is connected to the storage vessel 70, the storage vessel 70 connected to the connection pipe 80 is also opened to the atmosphere.
The film thickness sensor 40 includes a sensor having a resonance frequency (f 0 : fundamental frequency). The film thickness sensor 40 is provided via an arm 401In the storage container 70. The film thickness sensor 40 is provided so as to avoid between the substrate 90 and the film formation source 20, and is provided, for example, at a position above the film formation source 20. The film-forming material 20m released from the film-forming source 20 is deposited at the crystal oscillator. Thereby, the resonance frequency of the crystal oscillator with the film is from f 0 The change is started. The crystal oscillator is not limited to one but may be provided in plural. In this case, a chopper device (shutter) for selecting a specific crystal oscillator from among the plurality of crystal oscillators may be mounted to the film thickness sensor 40.
The film thickness controller 41 is a so-called film thickness monitor. The film thickness controller 41 generates a film thickness based on the oscillation frequency (f 0 ) The amount of the film-forming material 20m released from the film-forming source 20 was calculated. Here, the release amount corresponds to, for example, a film formation rate of a film deposited on the substrate 90, a thickness of a film deposited on the substrate 90, and the like.
The film forming speed and the film thickness of the film deposited on the substrate 90 calculated by the film thickness controller 41 are transmitted to the main controller 60. The data communication between the film thickness sensor 40 and the film thickness controller 41 is performed by, for example, a wiring 411 disposed inside the storage container 70. Further, data communication between the film thickness controller 41 and the main controller 60 is performed by, for example, wiring (communication wiring) 601 disposed inside the connection pipe 80 and inside the storage container 70.
The arm 401 may have a cooling mechanism for circulating cooling water through the film thickness sensor 40. Thus, the crystal oscillator is less susceptible to heat radiation from the heating mechanism 30. The wiring 411 may be led to the inside of the arm 401 or to the outside of the arm 401. In the case where the wiring 411 is led to the outside of the arm 401, a protective foil (e.g., aluminum foil) surrounding the wiring 411 and the arm 401 may be provided outside the arm 401.
The temperature sensor 50 is a so-called thermocouple. The electromotive force generated by the seebeck effect at the thermocouple is converted into temperature by the temperature controller 51, and the temperature of the film forming source 20 is measured. The temperature of the film forming source 20 calculated by the temperature controller 51 is sent to the main controller 60. The data communication between the temperature controller 51 and the main controller 60 is performed by, for example, wiring (communication wiring) 603 disposed inside the connection pipe 80 and inside the storage container 70.
The main controller 60 is disposed outside the vacuum vessel 10. The main controller 60 controls the amount of the film forming material 20m released from the film forming source 20 based on the amount of the film forming material 20m released calculated by the film thickness controller 41.
In addition, in addition to the wirings 601 to 603, for example, a wiring for supplying power to the motor for driving the conveying mechanisms 95 and 96, a wiring for supplying power to the film thickness sensor 40 or receiving a signal from the film thickness sensor 40, a wiring for supplying power to the motor for driving the interrupter, a wiring for supplying power to the motor for driving the shielding mechanism, and the like may be led out from the inside of the connecting pipe 80, which are not shown. Further, a water cooling pipe, a compressed air pipe, or the like may be disposed inside the connection pipe 80.
Fig. 4 is a schematic front view of a film forming apparatus according to a comparative example.
In the comparative example, the film thickness controller 41 is provided outside the vacuum vessel 10, not inside the housing vessel 70. Further, the wiring 411 connecting the film thickness controller 41 and the film thickness sensor 40 is led into the inside of the connection pipe 80. The wiring led to the connection pipe 80 in this way may have a length of several m to 10m.
A high-frequency voltage for resonating the resonance frequency of the crystal oscillator with a film is superimposed on the wiring 411. In addition, the high frequency voltage is an analog quantity. Therefore, the longer the length of the wiring 411, the more susceptible the wiring 411 is to external factors (noise). This is because a plurality of wirings other than the wiring 411 are led to the inside of the connection pipe 80.
In addition, during the operation of the film forming apparatus, the connection pipe 80 is bent and vibrated in the X-axis direction. Thus, the impedance of the wiring 411 may not be fixed for the high-frequency voltage.
For example, fig. 5 is a diagram showing an example of feedback control of a film formation source.
In the figure, the SV speed is a target value (set value) of the deposition speed, the MV speed is a control value of the film formation speed, and the PV speed is a measured value of the film formation speed. P1 shows that in the case where noise is generated as an external factor, for example, noise is superimposed on a junction point of the wiring 411.
When the target value (SVrate, SV speed) of the film formation speed is set, the target value (SVrate, SV speed) is transmitted as a control signal (MVrate, MV speed) to the heating means 30, and the heating means 30 heats based on the control signal. Then, the film forming source 20 is heated by receiving heat from the heating mechanism 30. Further, the film forming material 20m released from the film forming source 20 is deposited on a crystal oscillator, and a film forming speed (PVrate, PV speed) is calculated by a film thickness controller 41 which obtains a signal from the film thickness sensor 40.
At this time, when the target value (SVrate, SV speed) and the film formation speed (PVrate, PV speed) are different, the control signal (MVrate, MV speed) is corrected by PID (Proportional Integral Differential, proportional-integral-derivative) control so as to gradually approach the target value (SVrate, SV speed). These feedback controls are performed by the main controller 60.
However, as in the comparative example, when noise from another wiring is superimposed on the wiring 411 or the impedance of the wiring 411 fluctuates during the operation of the film forming apparatus, the film forming speed (PVrate, PV speed) calculated by the film thickness controller 41 may fluctuate. As a result, the control signal (MVrate, MV speed) of the PID control also fluctuates, and eventually, a situation occurs in which the amount of the deposition material 20m released from the deposition source 20 cannot be controlled with high accuracy.
In contrast, in the film forming apparatus 1 of the present embodiment, since the film thickness controller 41 is disposed inside the storage container 70, the wiring 411 is not led into the connection pipe 80. As a result, noise is less likely to be superimposed on the wiring 411 or the impedance of the wiring 411 is less likely to vary during operation of the film forming apparatus. Thus, the film formation rate (PVrate ) calculated by the film thickness controller 41 is stable, and the control signal (MVrate ) of the PID control is stable. As a result, the amount of the film forming material 20m released from the film forming source 20 is controlled with high accuracy by the main controller 60.
In the film forming apparatus 1, the temperature controller 51 is housed in the housing container 70, so that the thermocouple is not led into the connecting pipe 80. As a result, noise is less likely to be superimposed on the thermocouple during operation of the film forming apparatus. This stabilizes the electromotive force generated by the thermocouple, and can accurately measure the temperature of the film formation source 20. This is advantageous for feedback control with the temperature as a target value (SVrate, SV speed).
The film thickness controller 41 and the main controller 60 may communicate with each other through a wiring 601, or may communicate with each other digitally. The communication between the temperature controller 51 and the main controller 60 via the wiring 603 may be performed by digital communication. Thus, even if the wiring 601 or the wiring 603 is led to the connection pipe 80, the communication between the film thickness controller 41 and the main controller 60 or the communication between the temperature controller 51 and the main controller 60 is less susceptible to noise, and the amount of the deposition material 20m released from the deposition source 20 is controlled with higher accuracy.
Even if the storage container 70 is disposed inside the vacuum chamber 10, the storage container 70 is disposed below the film forming source 20, and the storage container 70 is configured to be linked to the film forming source 20. Therefore, the film forming apparatus is prevented from being enlarged, and a compact structure is formed.
Modification 1
Fig. 6 is a schematic front view of a film forming apparatus according to modification 1 of the present embodiment.
In the film forming apparatus 2, the main controller 60 is accommodated in the accommodating container 70. The wirings 601 and 603 are also accommodated in the accommodating container 70.
According to such a configuration, the wirings 601 and 603 do not need to be led to the connection pipe 80, and further, since the lengths of the wirings 601 and 603 are shorter, the communication between the film thickness controller 41 and the main controller 60 or the communication between the temperature controller 51 and the main controller 60 is less susceptible to noise. As a result, the amount of the film-forming material 20m released from the film-forming source 20 is controlled with higher accuracy.
Modification 2
Fig. 7 is a schematic front view of a film forming apparatus according to modification 2 of the present embodiment.
In the film forming apparatus 3, the film thickness controller 41 is a film thickness controller unit 41u, the main controller 60 is a main controller unit 60u, the temperature controller 51 is a temperature controller unit 51u, and a controller module 71 in which the respective circuit units are integrated is disposed inside the housing container 70.
The controller module 71 is a circuit board in which the respective circuit units of the film thickness controller unit 41u, the main controller unit 60u, and the temperature controller unit 51u are integrated on a main board.
According to such a structure, the wirings 601 and 603 form a line pattern in the main board. Further, the outer periphery of the controller module 71 is surrounded by the housing container 70, and thus, the controller module 71 is less susceptible to noise from outside the housing container 70 due to the protective effect of the container 70. Further, since the controller module 71 is a circuit board, the housing container 70 housing the controller module can be miniaturized.
Modification 3
Fig. 8 is a schematic front view of a film forming apparatus according to modification 3 of the present embodiment.
In the film forming apparatus 4, the film thickness controller 41 is disposed adjacent to the film thickness sensor 40. For example, the film thickness controller 41 is accommodated in an accommodating container 73 provided below the film thickness sensor 40. The storage container 73 communicates with the storage container 70 through a passage (not shown) provided in the arm 401, for example, and forms the same pressure (for example, atmospheric pressure) as the storage container 70. That is, the storage containers 70 and 73 constitute a storage container having a higher pressure than the vacuum container 10.
According to such a configuration, the wiring 411 is shorter, or the wiring 411 can be omitted in the case where the film thickness sensor 40 is directly provided in the film thickness controller 41. Accordingly, the wiring 411 is less susceptible to noise from other than the wiring 411, and the amount of the deposition material 20m released from the deposition source 20 can be controlled with higher accuracy, and the wiring 601 can be a digital wiring in the deposition apparatus 4.
The embodiments of the present invention have been described above, and the present invention is not limited to the embodiments described above, and various modifications can be made. For example, the film forming apparatuses 1, 2, and 3 are not limited to vapor deposition apparatuses, and sputtering apparatuses and CVD apparatuses may be used. The embodiments are not limited to the independent modes, and can be combined as technically as possible.
Description of the reference numerals
1. 2, 3, 4: film forming apparatus
10: vacuum container
10h: an opening
10: substrate board
20: film forming source
20m: film-forming material
21: nozzle
30: heating mechanism
40: film thickness sensor
41: film thickness controller
41u: film thickness controller unit
50: temperature sensor
51: temperature controller
51u: temperature controller unit
60: main controller
60u: main controller unit
70. 73: storage container
71: controller module
75: spacing piece
80: connecting pipeline
90: substrate board
90a: region(s)
92: substrate supporting mechanism
95. 96: conveying mechanism
98: exhaust mechanism
401: arm
411: wiring
601. 602, 603: wiring
801. 802, 803, 804, 805: a pipeline.
Claims (7)
1. A film forming apparatus includes:
a vacuum container;
a film forming source accommodated in the vacuum container;
a storage container which is stored in the vacuum container and can maintain a pressure higher than a pressure in the vacuum container;
a film thickness sensor which is accommodated in the vacuum container, is provided in the accommodating container via an arm, and includes an oscillator having a resonance frequency, and accumulates a film forming material released from the film forming source on the oscillator;
a film thickness controller stored in the storage container, and configured to calculate a release amount of the film forming material released from the film forming source based on a change in the resonance frequency caused by deposition of the film forming material; and
wiring which is disposed inside the housing container and is led inside or outside the arm in the vacuum container, and which communicates between the film thickness sensor and the film thickness controller,
the film forming source moves in conjunction with the storage container in the vacuum container.
2. The film forming apparatus according to claim 1, further comprising:
and a main controller that controls a release amount of the film forming material released from the film forming source based on the release amount calculated by the film thickness controller.
3. The film forming apparatus according to claim 2, further comprising:
a connecting pipe having a plurality of pipes connected to each other, adjacent pipes being connected to each other so as to be bendable; and
a communication wiring that communicates the film thickness controller with the main controller,
the main controller is arranged outside the vacuum container,
the connecting pipe is connected with the accommodating container in the vacuum container,
the communication wiring is disposed inside the connection pipe.
4. A film forming apparatus according to claim 3, wherein,
the film thickness controller and the main controller communicate by digital communication through the communication wiring.
5. The film forming apparatus according to claim 2, wherein
The main controller is accommodated in the accommodating container.
6. The film forming apparatus according to any one of claims 1 to 5, wherein,
the pressure of the accommodating container is atmospheric pressure.
7. The film forming apparatus according to claim 2, wherein,
the film thickness controller and the main controller are integrally formed as a controller module in the housing container.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-192061 | 2019-10-21 | ||
| JP2019192061 | 2019-10-21 | ||
| PCT/JP2020/030210 WO2021079589A1 (en) | 2019-10-21 | 2020-08-06 | Film forming device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113302332A CN113302332A (en) | 2021-08-24 |
| CN113302332B true CN113302332B (en) | 2023-09-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080007249.9A Active CN113302332B (en) | 2019-10-21 | 2020-08-06 | Film forming apparatus |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7080354B2 (en) |
| KR (1) | KR102615500B1 (en) |
| CN (1) | CN113302332B (en) |
| TW (1) | TWI813898B (en) |
| WO (1) | WO2021079589A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101097593B1 (en) * | 2011-03-11 | 2011-12-22 | 주식회사 선익시스템 | Thin film thickness control deposition system for improving thin film uniformity |
| JP2014070238A (en) * | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | Vacuum evaporation device, and evaporation method for the same |
| CN105463377A (en) * | 2014-09-30 | 2016-04-06 | 佳能特机株式会社 | Vacuum evaporation device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9816796D0 (en) * | 1998-08-03 | 1998-09-30 | Henrob Ltd | Improvements in or relating to fastening machines |
| JP2012111974A (en) | 2010-11-19 | 2012-06-14 | Olympus Corp | Film forming method and film forming device |
| JP2013206820A (en) | 2012-03-29 | 2013-10-07 | Samsung Display Co Ltd | Organic el device manufacturing apparatus and organic el device manufacturing method |
| US20170022598A1 (en) * | 2013-12-06 | 2017-01-26 | Uwe Schüssler | Depositing arrangement, deposition apparatus and methods of operation thereof |
-
2020
- 2020-08-06 KR KR1020217018296A patent/KR102615500B1/en active IP Right Grant
- 2020-08-06 JP JP2020568564A patent/JP7080354B2/en active Active
- 2020-08-06 CN CN202080007249.9A patent/CN113302332B/en active Active
- 2020-08-06 WO PCT/JP2020/030210 patent/WO2021079589A1/en active Application Filing
- 2020-08-19 TW TW109128154A patent/TWI813898B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101097593B1 (en) * | 2011-03-11 | 2011-12-22 | 주식회사 선익시스템 | Thin film thickness control deposition system for improving thin film uniformity |
| JP2014070238A (en) * | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | Vacuum evaporation device, and evaporation method for the same |
| CN105463377A (en) * | 2014-09-30 | 2016-04-06 | 佳能特机株式会社 | Vacuum evaporation device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI813898B (en) | 2023-09-01 |
| JPWO2021079589A1 (en) | 2021-11-18 |
| KR20210089760A (en) | 2021-07-16 |
| KR102615500B1 (en) | 2023-12-19 |
| JP7080354B2 (en) | 2022-06-03 |
| TW202129036A (en) | 2021-08-01 |
| CN113302332A (en) | 2021-08-24 |
| WO2021079589A1 (en) | 2021-04-29 |
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