JP6036270B2 - Vapor deposition apparatus and vapor deposition method - Google Patents

Description

  The present invention relates to a vapor deposition apparatus and a vapor deposition method. In detail, it is related with the vapor deposition apparatus and vapor deposition method which form the light emitting layer of an organic electroluminescent element into a film.

  An organic electroluminescence element (organic EL element) is a light-emitting element that utilizes light emitted when a carrier is injected into an organic thin film to form an excited state due to recombination and transition to a ground state. Organic EL elements are self-luminous surface light sources that have characteristics that can be driven at low voltages, are suitable for miniaturization and weight reduction, and have excellent visibility. As an alternative to the light source, the application to lighting equipment and display devices is being promoted, and the performance of organic EL elements for practical use, that is, improvement of light emission characteristics such as luminance and chromaticity, light emission efficiency, and light emission life is required. ing. Among them, in the multilayer white light emitting organic EL element that has been developed in recent years, the control of chromaticity is particularly a problem.

  The element performance including the chromaticity of such an organic EL element greatly depends on the film thickness of the organic layer constituting the organic EL element and the concentration of layer components such as a dopant added to the light emitting layer. This is because deviation of the organic layer thickness and layer component concentration from the target value affects the carrier recombination position and carrier transportability. Therefore, in order to improve the element performance of the organic EL element, it is necessary to form an organic layer having a predetermined film thickness and a layer component concentration having a predetermined concentration with high accuracy.

  However, in the vapor deposition method generally used as a film forming means for the organic layer of the organic EL element, the vapor deposition rate fluctuates with time due to a change in the evaporation amount of the vapor deposition material, a change in the behavior of the base material, or the like. In addition, the vapor deposition material molecules reach the substrate depending on the geometric conditions such as the size of the evaporation source and the substrate, their shape, and the positional relationship. The film thickness distribution may fluctuate. Therefore, in order to improve the element performance of the organic EL element, it is important how to suppress the fluctuation of the deposition amount caused by the temporal change and the geometric condition fluctuation during the vapor deposition. Thus, many techniques have been proposed in the past for monitoring fluctuations in the amount of deposition on a substrate by providing a film thickness measuring means together with an evaporation source.

For example, there is a technique in an apparatus that employs a point-like evaporation source in which an evaporation material discharge port is formed in a point shape as an evaporation source.
Patent Document 1 discloses a vapor deposition apparatus in which a substrate is fixed to a fixed portion provided in a vapor deposition chamber in a reduced pressure atmosphere, and a film forming material generated from a vapor deposition source is deposited on the substrate to form a thin film. An evaporation source moving mechanism for moving the evaporation source in different directions such as the X, Y, Z, and θ directions or in the combined direction of these directions is provided, and the evaporation source is moved with respect to the substrate during the evaporation by the evaporation source moving mechanism. The film thickness sensor or monitor is arranged in the vapor deposition source, and it moves with the vapor deposition source by the vapor deposition source moving mechanism so that the film thickness rate can always be measured or monitored to grasp the vapor deposition status. A technique related to the configured vapor deposition apparatus is disclosed.

In recent years, there has been an increasing need to form an organic thin film on a large-area substrate suitable for mass production and upsizing of organic EL elements, and a vapor deposition material discharge port is formed in a linear shape as an evaporation source. A technique in an apparatus that employs a linear evaporation source is known.
The point evaporation source requires a complicated scanning in the two-dimensional direction of the substrate surface when forming a film on a large area substrate, whereas the linear evaporation source does not require a complicated scanning. This form is more suitable for uniform film formation on a large-area substrate.

Patent Document 2 discloses a vapor deposition source of an organic material extending in a line shape, a transport unit that moves a relative position between the vapor deposition source and the substrate of the organic electroluminescent element in a direction orthogonal to the line longitudinal direction of the vapor deposition source, Organic electroluminescence device comprising: a film thickness monitor that detects a deposition rate of an organic material deposited on a substrate from a source; and a control unit that varies a moving speed of a relative position by a conveying unit based on a detection result of the film thickness monitor In the manufacturing apparatus, a plurality of vapor deposition sources are arranged side by side, and the conveying means sets the relative positions of the substrate and the vapor deposition sources so that the substrate sequentially passes through the positions facing the vapor deposition sources. Disclosed is a technique relating to a manufacturing apparatus configured to vary the moving speed of the relative position by the conveying means based on the detection result by the film thickness monitor corresponding to each deposition source. It has been. In this technique, since a plurality of vapor deposition sources are arranged in parallel, a plurality of film thickness monitors are arranged along the moving direction of the glass substrate so as to individually correspond to each vapor deposition source. (See paragraph 0020). In addition, when the deposition rates obtained by the respective film thickness monitors provided corresponding to the respective deposition sources are different from each other, a speed command uniquely determined from the calculation result is output to the motor drive device in an analog manner. However, it is disclosed that the moving speed of the glass substrate may be varied (see paragraphs 0028 and 0029).
Further, Patent Document 3 has a vacuum chamber for forming a thin film of an organic material on a predetermined film formation target, and an elongated evaporation port through which a vapor of a predetermined vapor deposition material passes. The evaporation source is disposed so as to move relative to the film formation target in the width direction of the evaporation port, and the evaporation source is configured as a standby position where film formation is not performed on the film formation target. A moving mechanism that moves relative to a film forming position where film formation is performed on the film object; and a film thickness sensor that detects a film forming speed of the evaporation source at the standby position. After the thickness sensor detects that the deposition rate of the evaporation source at the standby position is stable, the moving mechanism moves the evaporation source to the deposition position, and the deposition source temperature is maintained at the deposition position. A technique relating to a thin film forming apparatus configured to form a film on an object is disclosed.

JP 2004-035964 A JP 2004-095276 A JP 2004-091919 A

However, like the technique disclosed in Patent Document 1, it is possible to arrange the film thickness measuring means in the evaporation source and move it together by the moving mechanism so as to always measure or monitor the film thickness rate so as to grasp the deposition state. With this structure, if it is attempted to always grasp the deposition state, there is a problem that the life of the film thickness measuring means equipped with a commonly used crystal resonator is shortened.
In particular, the linear evaporation source has a problem that the evaporation rate of the material is higher than that of the point evaporation source, so that the frequency of replacement and repair of the film thickness measuring means is increased and the maintenance efficiency is deteriorated. In a linear evaporation source, it may be necessary to install a large number of film thickness measuring means along the linear outlet, so the problem of the maintenance efficiency of the film thickness measuring means is the same as in the case of a point evaporation source. It will appear more prominently.
In addition, since a blind spot occurs in the diffusion region of the vapor deposition particles due to the installation of a large number of film thickness measuring means, there is a high possibility that the vapor deposition amount may be uneven due to a change in geometric conditions including the case of multi-source vapor deposition.

The technique disclosed in Patent Document 2 is based on a detection result of a film thickness monitor that detects a deposition rate of an organic material in an organic electroluminescent element manufacturing apparatus including an organic material deposition source extending in a line shape. The moving speed of the relative position by the transfer means for moving the relative position between the source and the substrate of the organic electroluminescent element can be varied.
In such a technique, it is necessary to transport the substrate at a predetermined interval so as to cope with a change in the moving speed of the transport means. Therefore, there is a possibility that the efficiency of forming the organic layer continuously decreases.
In addition, when attempting to deposit a precise film thickness on a substrate that passes through a position facing the deposition source, it is necessary to detect the deposition rate constantly or frequently. The maintenance efficiency is in a trade-off relationship.

In the technique disclosed in Patent Document 3, after the deposition rate of the vapor deposition material is detected in a state where the evaporation source is arranged at a predetermined standby position, the evaporation source is moved toward the deposition position to form a film. Is configured to be performed.
In such a technique, when the evaporation rate fluctuates over time after the evaporation source starts moving, the influence cannot be avoided, and the film thickness cannot be controlled appropriately.

  As described above, in the film formation by vapor deposition performed by moving the evaporation source relative to the base material, it is necessary to consider the geometric condition variation caused by the installation of the film thickness measuring means and the maintenance efficiency of the film thickness measuring means. Therefore, the installation of film thickness measurement means is limited, it is difficult to control the appropriate film thickness by monitoring the fluctuation of the deposition amount, and it is difficult to form a film with a predetermined thickness with high accuracy. There is a problem.

  Therefore, the main object of the present invention is to provide a film with a predetermined thickness with high accuracy without being affected by restrictions on the installation of the film thickness measuring means in vapor deposition performed by moving the evaporation source relative to the substrate. It is to provide means for forming a film.

  The above object of the present invention is achieved by the following configurations.

(1) A vapor deposition apparatus for forming a film by moving an evaporation source that emits vaporized vapor deposition material relative to a substrate, the evaporation source having a vapor deposition material discharge port, the evaporation source, and the substrate A vapor deposition chamber for forming a reduced pressure state, an evaporation source moving means for supporting the evaporation source so that the discharge port faces the substrate, and reciprocating, and a start position of the reciprocation A first deposition rate measuring means for measuring a deposition rate of the deposition material of the evaporation source; a second deposition rate measuring means for measuring a deposition rate of the deposition material of the evaporation source at an intermediate position of the reciprocation; An evaporation source moving unit, a first deposition rate measuring unit, and a deposition amount control unit connected to the second deposition rate measuring unit, wherein the deposition amount control unit is configured to measure the first deposition rate. The starting position deposition rate measured by the means, the second steam Intermediate positions deposition rate speed measurement means is measured, and based on the forward moving speed of the reciprocating by the evaporation source moving means calculates the effective value of the forward-deposition amount, the amount of backward deposited by the evaporation source, the forward deposition amount The vapor deposition apparatus is characterized in that the return vapor deposition amount is adjusted so as to be a vapor deposition amount that coincides with the target vapor deposition amount by adding together with the effective value of .

(2) A vapor deposition apparatus for forming a film by moving an evaporation source for releasing vaporized vapor deposition material relative to a base material, wherein the vapor deposition amount control unit is measured by the first vapor deposition rate measuring means. An effective value of the amount of forward vapor deposition is calculated based on a starting position vapor deposition rate, an intermediate position vapor deposition rate measured by the second vapor deposition rate measuring means, and a forward movement speed of reciprocation by the evaporation source moving means, and the evaporation source wherein the backward deposition amount, and adjusting the backward movement speed of the reciprocating by the evaporation source moving means so that the deposition amount equal to the target deposition amount is summed with the effective value of the forward deposition amount of The vapor deposition apparatus as described in (1).

(3) A vapor deposition apparatus that forms a film by moving an evaporation source that discharges vaporized vapor deposition material relative to a substrate, wherein the evaporation source controls a discharge amount of the vapor deposition material released from the evaporation source. The evaporation amount control unit includes a start position evaporation rate measured by the first evaporation rate measuring unit, an intermediate position evaporation rate measured by the second evaporation rate measuring unit, and the calculating the effective value of the forward-deposition amount on the basis of the forward moving speed of the reciprocating by evaporation source moving means, backward deposition amount by the evaporation source, and combined with the effective value of the forward-deposition amount equal to the target deposition amount The vapor deposition apparatus according to (1) or (2), wherein the amount of vapor deposition material released is adjusted by the evaporation amount adjusting means so as to be a vapor deposition amount.

(4) Further, a sub-evaporation source held in the evaporation source moving unit in an arrangement parallel to the evaporation source, a sub-evaporation amount adjusting unit for adjusting the amount of vapor deposition material released from the sub-evaporation source, A first sub-deposition rate measuring means for measuring a deposition rate of the deposition material at the reciprocating start position from the sub-evaporation source; and a deposition material deposition at an intermediate position of the reciprocation from the sub-evaporation source A second sub-evaporation rate measuring unit for measuring a speed, and the sub-evaporation amount adjusting unit, the first sub-deposition rate measuring unit, and the second sub-deposition rate measuring unit are configured to control the deposition amount. The vapor deposition amount control unit includes a start position vapor deposition rate measured by the first vapor deposition rate measuring unit, an intermediate position vapor deposition rate measured by the second vapor deposition rate measuring unit, and the evaporation source moving unit. Based on the reciprocating movement speed The evaporation source to calculate the effective value of the forward deposition amount due, backward deposition amount by the evaporation source, the evaporation source by summing the effective value of the forward-deposition amount so that the deposition amount equal to the target deposition amount Te While adjusting the return path moving speed of the reciprocating movement by the moving means, the start position vapor deposition speed measured by the second sub vapor deposition speed measuring means, the intermediate position vapor deposition speed measured by the second sub vapor deposition speed measuring means, and the calculating the effective value of the forward deposition amount by the sub evaporation source based on the forward moving speed of the reciprocating by evaporation source moving means, the amount of backward deposition by the auxiliary evaporation source, and combined with the effective value of the forward-deposition amount 4. The vapor deposition apparatus according to any one of (1) to (3), wherein the amount of vapor deposition material released is adjusted by the sub-evaporation amount adjusting means so that the vapor deposition amount coincides with a target vapor deposition amount.

(5) The evaporation material emitted from the evaporation source is a host material in the organic electroluminescence element, the evaporation material emitted from the sub-evaporation source is a dopant material in the organic electroluminescence element, and light emission in the organic electroluminescence element. The vapor deposition apparatus according to (4), wherein a layer is formed.

(6) The vapor deposition apparatus according to any one of (1) to (5), wherein the evaporation source moving unit reciprocates twice or more with respect to the base material to which the vapor deposition material is attached.

(7) A vapor deposition method for forming a film by moving an evaporation source that discharges vaporized vapor deposition material relative to a substrate, the evaporation source having a vapor deposition material discharge port, the evaporation source, and the substrate A vapor deposition chamber for forming a reduced pressure state, supporting the evaporation source so that the discharge port faces the substrate, and reciprocating the evaporation source moving means, and the evaporation source from the evaporation source, First deposition rate measuring means for measuring the deposition rate of the deposition material at the start position of the reciprocation, and second deposition rate measurement for measuring the deposition rate of the deposition material at the intermediate position of the reciprocation from the evaporation source. And a vapor deposition amount controller connected to the evaporation source moving unit, the first vapor deposition rate measuring unit, and the second vapor deposition rate measuring unit. The deposition material is released, and the first A step of measuring the vapor deposition rate of the vapor deposition material at the start position of the reciprocation by the vapor deposition rate measuring means; a step of depositing the vapor deposition material on the substrate while moving the evaporation source to the intermediate position of the reciprocation , A step of measuring a deposition rate of the deposition material at an intermediate position of the reciprocating motion by the second deposition rate measuring unit, a start position deposition rate measured by the first deposition rate measuring unit, and the second deposition rate. intermediate positions deposition rate measuring means has measured, and calculates the effective value of the forward-deposition amount on the basis of the forward moving speed of the reciprocating by the evaporation source moving means, backward deposition amount by the evaporation source, the forward deposition amount step of adjusting the backward deposition amount so that the deposition amount by totaling the effective value coincides with the target deposition amount, while the evaporation source is moved to the start position of the reciprocable backward deposition amount the adjusted, the Deposition method characterized by comprising the steps of forming a film deposited so the deposition material to wood.

(8) A vapor deposition method for forming a film by moving an evaporation source that discharges vaporized vapor deposition material relative to a base material, wherein the reciprocating motion is performed by the evaporation source moving means in the step of adjusting the return vapor deposition amount. The vapor deposition method according to (7), wherein the amount of vapor deposition on the return path is adjusted by the return path moving speed.

(9) A vapor deposition method for forming a film by moving an evaporation source that emits vaporized vapor deposition material relative to a substrate, wherein the evaporation source controls a discharge amount of the vapor deposition material released from the evaporation source. The evaporation according to (7) or (8), further including an evaporation amount adjusting means for adjusting, wherein in the step of adjusting the return vapor deposition amount, the evaporation amount is adjusted by the evaporation amount adjusting means. Method.

  According to the present invention, a film having a predetermined thickness can be formed with high accuracy in vapor deposition performed by moving an evaporation source relative to a substrate. Moreover, when co-evaporating on a base material using a plurality of vapor deposition materials, a film in which the concentration of each vapor deposition material component is a predetermined concentration can be formed with high accuracy.

It is a block diagram of the vapor deposition apparatus which concerns on 1st Embodiment. It is a figure which shows operation | movement of the vapor deposition apparatus which concerns on 1st Embodiment. It is a block diagram of the vapor deposition apparatus which concerns on 2nd Embodiment. It is a figure which shows operation | movement of the vapor deposition apparatus which concerns on 2nd Embodiment. It is a block diagram of the vapor deposition apparatus which concerns on 3rd Embodiment. It is a figure which shows operation | movement of the vapor deposition apparatus which concerns on 3rd Embodiment.

  Hereinafter, a vapor deposition apparatus and a vapor deposition method according to an embodiment of the present invention will be described more specifically with reference to the drawings as appropriate. In each figure, common portions are denoted by the same reference numerals, and redundant description is omitted.

[First Embodiment]
FIG. 1 is a configuration diagram of a vapor deposition apparatus 1 according to the first embodiment. The vapor deposition apparatus 1 is a vapor deposition apparatus that forms a film by moving an evaporation source that emits vaporized vapor deposition material relative to a base material, while the evaporation source is reciprocated relative to the base material. It is an apparatus that performs vapor deposition in both the return paths.
The amount of vapor deposition material that is actually deposited on the substrate may fluctuate while the evaporation source reciprocates, so that a film with a predetermined thickness to be deposited on the substrate is not formed. There is.
Therefore, in the vapor deposition apparatus 1, the vapor deposition rate of the vapor deposition material is measured at an intermediate position where the reciprocating motion is performed, and the effective vapor deposition amount in the forward path is calculated based on the vapor deposition rate. A film having a predetermined thickness is formed with high accuracy by depositing the difference between the effective deposition amount and the target deposition amount in the reciprocating return path.
In this vapor deposition apparatus 1, the difference between the effective vapor deposition amount in the forward path and the target vapor deposition amount is adjusted by changing the moving speed of the evaporation source in the backward path to a speed based on the effective vapor deposition amount in the forward path. Achieved.
Such a vapor deposition apparatus 1 can be operated so as to deposit a host material or a dopant material for forming a light emitting layer of an organic EL element by an evaporation source whose return vapor deposition amount is adjusted by a moving speed of a reciprocating backward movement. it can. Then, a light emitting layer of an organic EL element required to form a film having a predetermined thickness can be formed with high accuracy.

With reference to FIG. 1, the structure of the vapor deposition apparatus 1 is demonstrated.
The evaporation apparatus 1 mainly includes an evaporation source 10, an evaporation chamber 20, an evaporation source moving means (30, 31, 32), a first evaporation rate measuring means 41, and a second evaporation rate measuring means 42. And a vapor deposition amount control unit 50.

The vapor deposition apparatus 1 includes at least an evaporation source 10 and a base material 5 to which a vapor deposition material is attached, and includes a vapor deposition chamber 20 that forms a sealed space in which the atmospheric pressure is controlled so that vapor deposition is performed in a reduced pressure state.
The main parts of the evaporation source moving means (30, 31, 32), the first evaporation rate measuring means 41, and the second evaporation rate measuring means 42 that are operated in the evaporation chamber 20 are all evaporated. It has a structure accommodated in the chamber 20. These evaporation source moving means (30), first vapor deposition rate measuring means 41, and second vapor deposition rate measuring means 42 have a vapor deposition amount control unit 50 via a signal line as shown by a broken line in FIG. Is connected.

A vacuum pump 21 is connected to the vapor deposition chamber 20 via a valve 22, and the vacuum pump 21 sucks air in the vapor deposition chamber 20 to form a reduced pressure state or a high vacuum state. Yes. An opening (not shown) is provided on the outer surface of the vapor deposition chamber 20, and an openable / closable door is provided at the opening, so that the substrate 5 can be carried into and out of the vapor deposition chamber 20.
The vapor deposition chamber 20 is provided with an openable / closable shielding means (not shown). The upper part on the substrate 5 side and the lower part on the evaporation source 10 side are isolated, so that the vapor deposition is performed before and after the vapor deposition is started. The material is configured to be restricted from adhering to the base material 5.

The base material fixing means 6 is a member that supports the base material 5 to which the vapor deposition material is adhered and is fixed in the vapor deposition chamber 20. In FIG. It is fixed above. During the vapor deposition, the substrate 5 is held on the substrate fixing means 6 so that the vapor deposition surface on which the vapor deposition material adheres is directed downward and exposed to the evaporation source 10 side. At this time, the base material fixing means 6 may be configured to hold the mask on which the vapor deposition pattern is formed together with the base material 5. The base material fixing means 6 may be provided with temperature adjusting means such as a heater for adjusting the temperature of the base material 5.
The substrate 5 on which vapor deposition is performed in the present embodiment may be either a single-wafer substrate or a long substrate formed in a flat plate shape, a film shape, or a sheet shape, and is a flexible long material that can be wound in a roll shape. When vapor deposition is performed on the base material, a cylindrical transport roll may be used as the base material fixing means 6. For example, an original roll of a long base material is disposed on the near side of FIG. 1, and the long base material roll is rotated by a conveying means (not shown) and supplied onto the reciprocating orbit of the evaporation source 10. Next, after the supplied long base material is stopped and fixed on the reciprocating orbit, the evaporation source 10 is operated to perform vapor deposition, and then the roll is rotated by a predetermined amount by the conveying means. The region where the substrate is vapor-deposited is unloaded from the reciprocating track and wound into a roll, and the region where the vapor deposition is not yet performed is newly supplied onto the reciprocating track. By repeating such a series of steps, vapor deposition can be performed in a so-called roll-to-roll form.

The evaporation source 10 is a mechanism that vaporizes the deposition material by heating, and is spaced from the substrate 5 at a predetermined interval so as to face the surface of the substrate 5 held by the substrate fixing means 6 to which the deposition material adheres. Disposed at a distance below.
The evaporation source 10 includes a vapor deposition material discharge port 11, and is configured to include a heating unit 12 and a vapor deposition material container 13.
The evaporation source 10 in the present embodiment is a so-called line source, and has a linear discharge port 11 having a predetermined length in the depth direction in FIG. This discharge port 11 is opened upward of the vapor deposition chamber 10 so as to face the base material 5, and the length of the discharge port 11 is the width of the base material 5 (the length in the depth direction in FIG. 1). It is almost the same length. Therefore, when the evaporation source 10 reciprocates in the direction of the arrow in FIG. 1, the evaporation material is evaporated on the entire evaporation surface of the substrate 5.

The heating means 12 provided in the evaporation source 10 heats the vapor deposition material stored in the vapor deposition material container 13 to vaporize the vapor deposition material. The heating means 12 is formed so that the vapor deposition material stored in the vapor deposition material container 13 is uniformly heated by being distributed around the vapor deposition material container 13, and in FIG. The heating means 12 is formed of a coiled electrically conductive member and is connected to a power source (not shown). The heating means 12 is controlled to a predetermined temperature so that the evaporation amount of the vapor deposition material to be vaporized becomes an appropriate amount.
As the heating method, an appropriate method such as high-frequency dielectric heating, resistance heating, induction heating, electron beam irradiation or the like is used depending on the physical properties of the vapor deposition material. A method using high frequency induction heating is preferable. In the method using high frequency dielectric heating used for heating the dielectric, an electrode material is disposed so as to sandwich a vapor deposition material, and a power source for applying a high frequency AC voltage is connected between the electrode materials. In addition, in the resistance heating method used when the melting point of the vapor deposition material is relatively low, a metal vapor deposition material container formed of tantalum, tungsten, molybdenum, or an alloy thereof, or a resistor disposed around the vapor deposition material A power source for supplying a load current to is connected. In the method using high frequency induction heating used for heating the conductor, a vapor deposition material is placed in the coil, and a high frequency power source is connected to the coil. When the vapor deposition material is a dielectric, heating may be performed indirectly by adding a high melting point conductor to the vapor deposition material.

The evaporation material container 13 provided in the evaporation source 10 is a heat-resistant container such as a crucible for storing the evaporation material to be attached to the base material 5. The vapor deposition material container 13 is connected to a discharge flow path from the container through the vapor deposition material discharge port 11 to the vapor deposition chamber 20 so that the vapor deposition material vaporized in the container diffuses outside the evaporation source 10. .
The material of the vapor deposition material container 13 is made of tantalum, tungsten, molybdenum, alloys thereof, ceramics such as aluminum oxide, aluminum nitride, silicon carbide, zirconia, graphite, or the like. It is appropriately selected depending on the physical properties or chemical properties.

The emission port 11 provided in the evaporation source 10 has an opening formed in a linear shape so that the emission range of the emitted vapor deposition material is expanded in one direction. The shape of the opening is not limited to a single elongated opening, and a plurality of rectangular or circular openings may be continuously arranged on a straight line. In the case where the discharge ports 11 are formed by continuously arranging the openings, the interval between the openings is reduced so that the film thickness distribution in the arrangement direction becomes uniform.
As shown in FIG. 1, the discharge port 11 is formed on the outer surface of the housing integrated with the vapor deposition material container 13, so that the discharge port 11 is connected to the vapor deposition material container 13 through the housing wall forming the discharge flow path. However, the vapor deposition material container 13 may be connected to the vapor deposition material container 13 via a pipe forming a discharge flow path by being formed in a separate head from the vapor deposition material container 13.

Further, the evaporation source 10 may be provided with an evaporation amount adjusting means 60 for adjusting the amount of vaporized vapor deposition material released. The evaporation amount adjusting means 60 is configured by an opening / closing mechanism that adjusts the opening and closing of the flow path for discharging the vapor deposition material. In FIG. 1, the evaporation amount adjusting means 60 is configured by a valve provided in the discharge flow path of the evaporation source 10. It may be a shutter or the like provided in the discharge port 11 of the source 10.
The opening / closing mechanism of the evaporation amount adjusting means 60 is provided with an opening degree detecting means (not shown) composed of a magnetic or optical encoder that detects the opening degree, and the opening degree that provides a predetermined vapor deposition material discharge amount is provided. Feedback controlled. In the vapor deposition apparatus 1, while the evaporation source 10 is reciprocating, the opening degree of the opening / closing mechanism is controlled to be constant.

  When such an evaporation source 10 is driven, the vapor deposition material stored in the vapor deposition material container 13 is heated to a predetermined temperature by the heating unit 12 to be vaporized, passes through the discharge flow path, and passes from the discharge port 11 to the vapor deposition chamber 20. Is released into the space inside and diffused to reach the surface of the substrate 5.

The evaporation source moving means is means for moving the evaporation source 10 relative to the substrate 5 in the vapor deposition chamber 20. The movement of the evaporation source 10 in the present embodiment is a reciprocating motion performed in a direction perpendicular to the longitudinal direction of the discharge port 11 (the depth direction in FIG. 1), as indicated by the arrow in FIG.
In FIG. 1, the evaporation source moving means includes a drive unit 30 that drives the reciprocation of the evaporation source 10, a guide unit 32 that guides the movement of the evaporation source 10 linearly, and a guide unit 32 that holds the evaporation source 10. It is comprised by the needle | mover 31 which reciprocates above. Specifically, a linear motor mechanism, a mechanism using a ball screw and a servo motor, or the like is used as the evaporation source moving means.

The mover 31 of the evaporation source moving means supports the evaporation source 10 in a direction in which the linear discharge port 11 faces one side of the base material 5, and is a direction perpendicular to the longitudinal direction of the discharge port 11 and the base material 5. It is supported so as to be able to reciprocate in parallel with the vapor deposition surface.
The drive unit 30 of the evaporation source moving means is connected to the vapor deposition amount control unit 50 through a signal line as shown by a broken line in FIG. 1, and is set based on a control input from the vapor deposition amount control unit 50. It is controlled to reciprocate at a high speed.
The reciprocating motion of the evaporation source 10 is performed in a section including from immediately below one end of the substrate 5 to immediately below the other end. In this section, the projection of the discharge port 11 onto the substrate 5 is performed on the deposition surface of the substrate 5. It is operated so as to scan, and vapor deposition is performed. The evaporation source moving means (30, 31, 32) is controlled so that the evaporation source 10 moves at a constant speed in a section from directly below one end of the substrate to immediately below the other end.
As shown in FIG. 2, the evaporation source 10 starts to move from the reciprocating start position P <b> 1, passes just below one end of the vapor deposition surface of the substrate 5, and moves at a constant speed while scanning the vapor deposition surface. . After that, it passes directly under the other end of the vapor deposition surface and moves to an intermediate position P2, which is a reciprocating folding position.
The start position P1 is a movement start position in the reciprocating movement and a movement ending position in the reciprocating movement. The intermediate position P2 is a movement starting position in the reciprocating movement and a movement end position in the reciprocating movement. . The start position P1 and the intermediate position P2 are usually outside the both outer ends of the deposited substrate.
This evaporation source moving means is provided with an evaporation source position detection means (not shown) composed of a magnetic or optical encoder that detects the position of the evaporation source 10 on the reciprocating orbit. The means is feedback-controlled so that the mover 31 is operated at a predetermined moving speed.

The vapor deposition rate measuring unit is a unit that measures the rate at which the vapor deposition material released from the evaporation source 10 is deposited on the substrate 5.
In the present embodiment, the vapor deposition rate measuring unit includes a first vapor deposition rate measuring unit 41 that measures the vapor deposition rate of the vapor deposition material at the reciprocating start position P1 of the evaporation source 10, and a vapor deposition material at the reciprocating intermediate position P2. It is comprised from the 2nd vapor deposition rate measurement means 42 which measures a vapor deposition rate.
The vapor deposition rate measuring means 41 and 42 are measuring instruments that indirectly measure the vapor deposition rate (so-called vapor deposition rate) of the vapor deposition material by measuring the amount of vapor deposition material expected to adhere to the substrate 5 per unit time. is there. Specifically, a non-contact type film thickness meter provided with a crystal resonator or the like is used.
These vapor deposition rate measuring means are located in the vicinity of the base material at the start position P1 and the intermediate position P2 of the reciprocation of the evaporation source 10 so that the distance to the evaporation source 10 is the same distance as the base material. It is arranged at the position.
In the present embodiment, since a linear evaporation source is used, it is preferable that the deposition rate along the longitudinal direction (depth direction in FIG. 1) of the discharge port 11 of the evaporation source 10 is monitored. Therefore, the first vapor deposition rate measuring unit 41 and the second vapor deposition rate measuring unit 42 may each include a plurality of bodies along the longitudinal direction of the discharge port 11 of the evaporation source 10.
Further, the vapor deposition rate measuring means 41 and 42 are arranged at positions that do not prevent the deposition material from adhering to the base material 5, and the incident direction of the vapor deposition material with respect to the measuring element of each measuring means is the start of reciprocation of the evaporation source 10. It is partitioned by an adhesion-preventing plate as necessary so as to be limited to each of the position P1 and the intermediate position P2. Alternatively, a shutter for controlling the opening / closing of the measuring element is provided so that the time when the vapor deposition material enters the vapor deposition rate measuring means can be managed.
The first vapor deposition rate measuring unit 41 and the second vapor deposition rate measuring unit 42 are connected to the vapor deposition amount control unit 50 through a signal line as indicated by a broken line in FIG.

The vapor deposition amount controller 50 is a control device that adjusts the reciprocating movement speed of the reciprocating movement by the evaporation source moving means based on the vapor deposition speed measured by the vapor deposition speed measuring means and the reciprocating movement speed of the reciprocating movement by the evaporation source moving means. is there. Further, the continuation and termination of the vapor deposition accompanying the reciprocation of the evaporation source are controlled based on the set threshold value input from the operation unit connected to the vapor deposition amount control unit 50.
The vapor deposition amount control unit 50 includes a target speed generation system that generates a target value of the movement speed of the evaporation source moving means including an arithmetic circuit, an input / output circuit, a filter, an I / F, an A / D, a D / A conversion circuit, and the like. An evaporation source moving means control system for performing feedback control of the evaporation source moving means.
The target speed generation system receives input of initial values and measurement signals output from the vapor deposition speed measuring means, calculates the vapor deposition speed, movement speed, and vapor deposition amount, and sets the generated target value of the movement speed to the evaporation source moving means control system. It is configured to output to.
The evaporation source moving means control system accepts input of a target value input from the operation unit connected to the vapor deposition amount control unit 50 or a target value generated by the target speed generation system, and detects an evaporation source position provided in the evaporation source moving means. The position measurement signal output from the means is fed back to perform control calculation such as PID calculation, and the control signal is output to the evaporation source moving means.

  Next, operation | movement and the vapor deposition method of the vapor deposition apparatus 1 which concern on 1st Embodiment are demonstrated.

In the vapor deposition apparatus 1, the base material 5 to be vapor-deposited is carried into the vapor deposition chamber 20 through an opening on the outer surface of the vapor deposition chamber 20 in advance. And the base material 5 is hold | maintained toward the evaporation source 10 which has a vapor deposition surface below the vapor deposition chamber 20 by the base material fixing means 6 above the vapor deposition chamber 20, and is temperature-controlled as needed. At this time, the vapor deposition chamber 20 is brought into a high vacuum state by operating the vacuum pump 21.
The vapor deposition material container 13 of the evaporation source 10 stores a vapor deposition material deposited on the base material 5, and physical property information of this vapor deposition material, for example, density information, is stored in the vapor deposition rate measuring means.
In the vapor deposition rate measuring unit or the vapor deposition amount control unit 50, the correction coefficient calculated from the film forming profile acquired in the calibration operation of the vapor deposition apparatus is stored as setting information for calibrating the measurement value of the vapor deposition rate measuring unit. Has been.

The calibration operation is an operation that is performed in advance of the normal operation for performing vapor deposition on the base material 5, and vapor deposition is performed on the sample base material under the same conditions as the normal operation, and the film thickness formed on the sample base material is The film formation profile is acquired by actual measurement.
The evaporation source moving speed (V) is expressed by the following equation 1 using the vapor deposition amount (D) corresponding to the film thickness formed on the substrate 5 and the vapor deposition speed (R) measured by the vapor deposition speed measuring means. It is expressed as follows.
D = α * R / V (Formula 1)
(In the formula, α represents a correction coefficient.)
Therefore, in the calibration operation, vapor deposition is performed on the sample base material at a predetermined evaporation source moving speed (V) and vapor deposition speed (R), and the film thickness formed on the sample base material is set to, for example, a stylus type By actually measuring using a film thickness meter or an optical film thickness meter, the value of the deposition amount (D) is acquired. Then, a correction coefficient α is calculated based on Equation 1 from the obtained deposition amount (D), evaporation source moving speed (V), and deposition rate (R). In the following description, the measured value of the vapor deposition rate measuring means is a value that is not calibrated by the correction coefficient.

In starting the normal operation, first, the deposition amount to be deposited on the substrate 5 by the deposition apparatus 1 (target deposition amount (D _d )) and the deposition on the substrate 5 in the reciprocation of the evaporation source are to be formed. A target outbound vapor deposition amount (D ₁₀ ) is set. In addition, the value of these vapor deposition amounts represents the value equivalent to the film thickness formed into the base material 5. FIG.
In the present embodiment, since vapor deposition is performed in both the forward path and the return path in one reciprocation, the forward deposition amount (D ₁ ) deposited on the substrate 5 in the reciprocation of the evaporation source and the reciprocation of the evaporation source. A value obtained by adding up the return deposition amount (D ₂ ) deposited on the base material 5 in the dynamic return path is the target deposition amount (D _d ). Therefore, as the target forward deposition amount (D ₁₀ ), a value equal to the target deposition amount (D _d ) to be deposited in one reciprocating motion, or film deposition equally divided between the forward path and the return path is performed. target deposition amount and a value of about 50% (D _d), so that fine adjustment is easily to changes in deposition rate, a value of about 60% to 90% of the target deposition amount (D _d) is set.
When the target outbound vapor deposition amount (D ₁₀ ) is set, the outbound path moving speed (V ₁ ) that is the initial value of the evaporation source moving speed (V) and the outbound path that is the initial value of the deposition speed (R) in normal operation. The target value of the deposition rate (R ₁₀ ) is set so as to satisfy the relationship represented by the following formula 2.
D ₁₀ = α * R ₁₀ / V ₁ (Formula 2)
As target values for the forward travel speed (V ₁ ) and the forward deposition rate (R ₁₀ ) to be set, appropriate values are selected in consideration of film formation efficiency, apparatus performance, and the like.

Thus, when the target values of the target vapor deposition amount (D _d ), the target forward vapor deposition amount (D ₁₀ ), the forward movement speed (V ₁ ), and the forward vapor deposition rate (R ₁₀ ) are set in the normal operation, the vapor deposition apparatus. 1 normal operation is started. First, the heating means 12 included in the evaporation source 10 is operated, and the vapor deposition material stored in the vapor deposition material container 13 is heated. The heated vapor deposition material is gradually vaporized, and the vaporized vapor deposition material is discharged from the discharge port 11 into the vapor deposition chamber 20.

Next, the vapor deposition material discharged from the evaporation source 10 is measured by the first vapor deposition rate measuring means 41 for the vapor deposition rate of the vapor deposition material at the reciprocating start position P1.
FIG. 2 is a diagram illustrating the operation of the vapor deposition apparatus according to the first embodiment.
As shown in FIG. 2A, at the start of operation, the evaporation source 10 is stopped at the start position P <b> 1 below the first vapor deposition rate measuring means 41, and vaporized released into the vapor deposition chamber 20. The vapor deposition material is incident on the probe of the first vapor deposition rate measuring means 41 to measure the vapor deposition rate, and the vapor deposition rate measurement signal output from the first vapor deposition rate measuring unit 41 is input to the vapor deposition amount control unit 50. Is done.
The vapor deposition rate (start position vapor deposition rate (R ₁ )) of the vapor deposition material at the start position P1 of the reciprocating motion of the evaporation source 10 measured here is a value of a film thickness expected to be deposited on the substrate 5 per unit time. Is shown. This start position vapor deposition rate (R ₁ ) is adjusted by the output of the heating means 12 at the start position P 1 so as to coincide with a preset forward vapor deposition rate (R ₁₀ ).
Thereafter, when the forward vapor deposition rate (R ₁₀ ) reaches the target value, the shielding means that isolates the base material 5 from the evaporation source 10 is opened, and the vaporized vapor deposition material starts to be released to the base material 5.

Next, when the evaporation source moving means is driven, the forward movement of the reciprocating motion of the evaporation source 10 is started, and while the evaporation source 10 is moved to the intermediate position P2 of the reciprocating motion, the vapor deposition material is applied to the substrate 5. Is deposited.
When the drive unit 30 of the evaporation source moving means is operated, as shown in FIG. 2A, the evaporation source 10 supported by the movable element 31 has a set forward movement speed (V ₁ ). The movement is started along the guide portion 32 in the direction of the reciprocating intermediate position P2.
Then, the evaporation source 10 supported by the movable element 31 has a constant speed at which the forward movement speed (V ₁ ) substantially reaches the target value by the time it passes from the start position P1 to a position immediately below one end of the base material 5. 5, the deposition surface of the base material 5 is scanned in the section from directly under one end to directly under the other end to perform deposition on the base material 5.
Thereafter, the evaporation source 10 passes just below the base material 5 and reaches an intermediate position P2 which is a reciprocating folding position.

Next, the vapor deposition material discharged from the evaporation source 10 is measured by the second vapor deposition rate measuring means 42 for the vapor deposition rate of the vapor deposition material at the reciprocating intermediate position P2.
As shown in FIG. 2 (b), when the evaporation source 10 reaches the intermediate position P2 below the second evaporation rate measuring means 42, the evaporation material released from the evaporation source 10 becomes the second evaporation rate. The vapor deposition rate is measured by entering the probe of the measuring unit 42, and the vapor deposition rate measurement signal output from the second vapor deposition rate measuring unit 42 is input to the vapor deposition amount control unit 50.
The vapor deposition rate (intermediate position vapor deposition rate (R ₂ )) of the vapor deposition material at the intermediate position P2 of the reciprocating movement of the evaporation source 10 measured here is normally the start position vapor deposition rate (R ₁ ) due to the fluctuation of the vapor deposition amount. Have different values. In general, the value of the intermediate position deposition rate (R ₂ ) tends to be lower than the value of the start position deposition rate (R ₁ ).

Next, based on the starting position deposition rate measured by the first deposition rate measuring means 41, the intermediate position deposition rate measured by the second deposition rate measuring means 42, and the forward movement speed of the reciprocating movement by the evaporation source moving means. The return path moving speed of the reciprocating motion by the evaporation source moving means is adjusted so that the return deposition amount by the evaporation source 10 is added to the outbound deposition amount to coincide with the target deposition amount.
The evaporation source 10 has a constant deposition rate (outward deposition rate (R ₁₀ ) equal to the start position deposition rate (R ₁ ) at the forward travel speed (V ₁ ) controlled to a predetermined target value in the reciprocating path. )), And is operated to achieve a preset target forward deposition amount (D ₁₀ ).
However, the vapor deposition rate of the vapor deposition material (intermediate position vapor deposition rate (R ₂ )) measured at the reciprocating intermediate position P2 is different from the start position vapor deposition rate (R ₁ ) due to fluctuations in the vapor deposition amount. Yes.

Therefore, the vapor deposition amount control unit 50 that has received the input of the vapor deposition rate measurement signal uses the value of the intermediate position vapor deposition rate (R ₂ ) measured by the second vapor deposition rate measuring means 42 to form the substrate 5. The effective value of the amount of outward deposition (D ₁ ) formed is calculated.
When the forward movement speed (V ₁ ) of the evaporation source 10 is used, the effective value of the forward vapor deposition amount (D ₁ ) can be obtained by the following Equation 3.
D ₁ = α * E (R ₂ ) / V ₁ (Equation 3)
(In the formula, E (R ₂ ) represents the average of the measured deposition rates (R ₂ , R ₁ ).)

Therefore, the vapor deposition amount control unit 50 assumes that the intermediate position vapor deposition rate (R ₂ ) measured by the second vapor deposition rate measuring unit 42 is constant in the return path of the reciprocation of the evaporation source 10. A target value of the return movement speed (V ₂ ) for achieving the target return deposition amount (D ₂₀ ) corresponding to the difference between the effective values of the deposition amount (D _d ) and the forward deposition amount (D ₁ ) is generated.
When the target return deposition amount (D ₂₀ ) is used, the return travel speed (V ₂ ) is expressed by the following equation 4.
V ₂ = α * R ₂ / D ₂₀ = D ₁ / (D _d −D ₁ ) * V ₁ (Formula 4)
When the deposition amount control unit 50 generates the target value of the backward movement speed (V ₂ ) based on the relationship between the forward movement speed (V ₁ ) and the backward movement speed (V ₂ ), the deposition amount control unit 50 Output a control signal.

Next, when the evaporation source moving means is operated in the opposite direction, the return path of the reciprocating movement of the evaporation source 10 is started, and the evaporation source is moved to the reciprocating start position P1 at the adjusted return path moving speed. In the meantime, the deposition material is adhered to the substrate 5 and film formation is performed again.
When the drive unit 30 of the evaporation source moving means that has received the control signal is activated, the evaporation source 10 supported by the movable element 31 is guided at the backward movement speed (V ₂ ) set as the target value by the vapor deposition amount control unit 50. The movement is started along the portion 32 in the direction of the reciprocating start position P1.
The evaporation source 10 reaches a constant speed at which the return path moving speed (V ₂ ) substantially reaches the target value by passing from the intermediate position P2 to just below one end of the base material 5, and from the position immediately below one end of the base material 5 to the other end. The vapor deposition surface of the base material 5 is scanned in the section up to immediately below, and vapor deposition is performed again on the base material 5.
Then, as shown in FIG. 2C, the evaporation source 10 passes directly under the base material 5 and returns to the reciprocating start position P1.
As described above, when the evaporation source 10 is reciprocated with respect to the base material 5 to perform the vapor deposition in both the forward path and the backward path, the vapor deposition on the base material 5 is completed. When the shielding means provided in the vapor deposition chamber 20 is closed, the adhesion of the vapor deposition material to the substrate 5 is regulated, and the vapor deposited substrate 5 is carried out.

Alternatively, when the evaporation source 10 returns to the start position P1, one reciprocation is completed, and the operation can be performed so that the reciprocation is performed again as necessary.
In such an operation, at the reciprocation start position P1, the vapor deposition rate of the vapor deposition material at the reciprocation start position P1 is again measured by the first vapor deposition rate measuring means 41.
It is assumed that the evaporation source 10 performs vapor deposition at a constant vapor deposition rate equal to the intermediate position vapor deposition rate (R ₂ ) at the backward movement speed (V ₂ ) controlled to a predetermined target value in the reciprocating return path. Thus, the system is operated so as to achieve a preset target return deposition amount (D ₂₀ ).
However, as in the forward path, the deposition rate of the deposition material (start position deposition rate (R _1n )) measured again at the start position P1 of the reciprocating motion is different from the intermediate position deposition rate (R ₂ ) as the deposition amount varies. Have different values. In general, the value of the start position deposition rate (R _1n ) tends to be lower than the value of the intermediate position deposition rate (R ₂ ).

Therefore, the vapor deposition amount control unit 50 that has received the input of the vapor deposition rate measurement signal again receives the value of the start position vapor deposition rate (R _1n ) that is the measured value of the vapor deposition rate from the first vapor deposition rate measuring means 41. Is used to calculate the effective value of the return vapor deposition amount (D ₂ ) deposited on the substrate 5.
When the return path moving speed (V ₂ ) of the evaporation source 10 is used, the effective value of the return path deposition amount (D ₂ ) is expressed by the following formula 5.
D ₂ = α * E (R _1n ) / V ₂ (Formula 5)
(In the formula, E (R _1n ) represents the average of the measured deposition rates (R _1n , R ₂ ).)

Then, the vapor deposition amount control unit 50 adds the effective value of the calculated return vapor deposition amount (D ₂ ) and the effective value of the forward vapor deposition amount (D ₁ ), and the target vapor deposition to be deposited on the substrate 5. The vapor deposition amount difference (D _dn ) from the amount (D _d ) is calculated.

The vapor deposition amount control unit 50 determines whether or not the vapor deposition amount difference (D _dn ) is less than a predetermined threshold value. This threshold value is set, for example, via an operation unit connected to the deposition amount control unit 50.

When the deposition amount difference (D _dn ) is less than the predetermined threshold value, the deposition on the base material 5 is terminated assuming that a film having a predetermined thickness to be formed is formed. When the shielding means provided in the vapor deposition chamber 20 is closed, the adhesion of the vapor deposition material to the substrate 5 is regulated, and the vapor deposited substrate 5 is carried out.

When the vapor deposition amount difference (D _dn ) is equal to or greater than a predetermined threshold, vapor deposition is continued by the reciprocating movement of the evaporation source 10 with respect to the substrate 5 again.

The forward travel speed (V _1n ) of the reciprocating motion performed again is the first reciprocating so that the deposition amount on the substrate 5 by the reciprocating motion of the evaporation source becomes a value corresponding to the deposition amount difference (D _dn ). It is set in the same way as the movement. The sum of the reciprocating forward deposition amount (D _1n ) and the return deposition amount (D _2n ) is the deposition amount difference (D _dn ).
Therefore, the target outbound vapor deposition amount (D _10n ) to be deposited on the substrate 5 in the outbound _path is a value equal to the deposition amount difference (D _dn ) to be deposited in the reciprocating motion, or equally divided between the outbound path and the return path. About 50% of the deposition amount difference (D _dn ) so that the deposited film is formed, and about 60 to 90% of the deposition amount difference (D _dn ) so as to reduce errors due to fluctuations in the deposition rate. The amount that becomes the value of is set again.

Therefore, the vapor deposition amount control unit 50 assumes that the start position vapor deposition rate (R _1n ) measured by the first vapor deposition rate measuring means 41 is constant in the reciprocation of the evaporation source 10 that is performed again. Then, the target value of the forward travel speed (V _1n ) for achieving the target forward deposition amount (D _10n ) is generated again.
When the target outbound vapor deposition amount (D _10n ) is used, the outbound travel speed (V _1n ) is expressed by the following formula 6.
V _1n = α * R _1n / D _10n (Expression 6)

The vapor deposition amount control unit 50 sets the target value of the forward movement speed (V _1n ) based on the relationship between the target forward vapor deposition amount (D _10n ) and the start position vapor deposition rate (R _1n ) for the reciprocating motion performed again. Is generated, a control signal is output to the evaporation source moving means.

Thereafter, the evaporation source moving means is driven in the same manner as the first reciprocating motion, so that the forward movement of the reciprocating motion of the evaporation source 10 is started and the evaporation source 10 is moved to the intermediate position P2 of the reciprocating motion. Film formation is performed by attaching a vapor deposition material to the substrate 5.
At the intermediate position P2 of the reciprocating motion, the vapor deposition material released from the evaporation source 10 again has the intermediate position vapor deposition rate (R _2n ) at the intermediate position P2 of the reciprocating motion by the second vapor deposition rate measuring means 42. It is measured.

The return path moving speed (V _2n ) of the evaporation source 10 in the return path of the reciprocating motion performed again is calculated in the same manner as the first reciprocating motion, and the effective value of the intermediate position deposition rate (R _2n ) and the outbound deposition amount (D _1n ). When the vapor deposition amount difference (D _dn ) is used, it is expressed by the following formula 7.
V _2n = D _1n / (D _dn −D _1n ) * V _1n (Expression 7)
The vapor deposition amount control unit 50 is based on the relationship between the forward movement speed (V _1n ) and the backward movement speed (V _2n ), and the effective value of the forward vapor deposition quantity (D _1n ) calculated according to Equation 3. When the target value of the return path moving speed (V _2n ) is generated, a control signal is output to the evaporation source moving means.

Thereafter, when the evaporation source moving means that has received the input of the control signal is operated in the opposite direction, the backward movement of the evaporation source 10 is started, and the evaporation source 10 is moved back and forth at the adjusted backward movement speed. During the movement to the starting position P1, film formation on the substrate 5 is performed again.
Then, the evaporation source 10 returns to the reciprocating start position P1, and the evaporation amount control unit 50 determines whether a film having a predetermined thickness to be formed has been formed, as in the first reciprocating motion. To be judged.
Thereafter, a film having a predetermined thickness is formed by repeating the same process.

According to such a vapor deposition apparatus and vapor deposition method, the amount of vapor deposition material deposited on the substrate varies when the evaporation source that releases the vaporized vapor deposition material is moved relative to the substrate to form a film. Even in this case, since the deposition amount can be corrected in the return path of the reciprocation of the evaporation source, a film having a predetermined thickness can be formed with high accuracy. Furthermore, a film having a predetermined thickness can be formed with higher accuracy by performing the reciprocating motion a plurality of times. Moreover, since the deposition rate measuring means installed at both ends of the reciprocating motion is sufficient as the film thickness measuring means required for that purpose, the maintenance efficiency related to the installation and repair of the film thickness measuring means is improved.
In addition, it is possible to form a film with a predetermined thickness by dividing the reciprocating path of the evaporation source into the forward path and the backward path, thereby reducing the influence of the deposition amount over time and the geometric condition fluctuation. Can do.
In addition, since the deposition amount is adjusted by the moving speed of the evaporation source, the structure of the existing deposition apparatus can be used effectively.

[Second Embodiment]
Next, other embodiments of the vapor deposition apparatus and the vapor deposition method according to an embodiment of the present invention will be described.

FIG. 3 is a configuration diagram of the vapor deposition apparatus 2 according to the second embodiment. The vapor deposition apparatus 2 is different from the vapor deposition apparatus 1 according to the first embodiment in that the difference between the effective vapor deposition amount in the forward path and the target vapor deposition volume is that the amount of the vapor deposition material released from the evaporation source in the backward path is the forward path. This is a point achieved by adjusting the return vapor deposition amount by changing the discharge amount based on the effective vapor deposition amount.
Such a deposition apparatus 2 can be operated to deposit a host material or a dopant material for forming a light emitting layer of an organic EL element by an evaporation source whose return deposition amount is adjusted by a moving speed of a reciprocating return path. In addition, the light emitting layer of the organic EL element required to form a film having a predetermined thickness can be formed with high accuracy.

With reference to FIG. 3, the structure of the vapor deposition apparatus 2 is demonstrated.
Similar to the vapor deposition apparatus 1, the vapor deposition apparatus 2 mainly includes the evaporation source 10, the vapor deposition chamber 20, the evaporation source moving means (30, 31, 32), the first vapor deposition rate measuring means 41, and the second. The vapor deposition rate measuring means 42 and the vapor deposition amount control unit 50 are included.
In the vapor deposition apparatus 2, as shown by a broken line in FIG. 3, the vapor deposition amount control unit 50 emits from the first vapor deposition rate measuring unit 41, the second vapor deposition rate measuring unit 42, the evaporation source moving unit, and the evaporation source 10. The evaporation amount adjusting means 60 for adjusting the amount of the vapor deposition material to be discharged is connected via a signal line.

The evaporation amount adjusting means 60 includes an opening / closing mechanism that adjusts the opening and closing of the flow path for discharging the vapor deposition material. In FIG. 3, the valve is provided in the discharge flow path of the evaporation source 10, but a shutter or the like provided in the discharge port 11 of the evaporation source 10 may be used.
The evaporation amount adjusting means 60 is connected to the vapor deposition amount control unit 50 through a signal line, thereby adjusting the opening / closing mechanism to a predetermined opening based on a control input from the vapor deposition amount control unit 50, thereby vapor deposition. The amount of material released from the evaporation source 10 into the deposition chamber is controlled.

In the vapor deposition apparatus 2, the vapor deposition amount control unit 50 releases the vapor deposition material by the evaporation amount adjusting unit 60 based on the vapor deposition rate measured by the vapor deposition rate measuring unit and the reciprocating movement speed of the evaporation source moving unit. Is adjusted. Further, the continuation and termination of the vapor deposition accompanying the reciprocation of the evaporation source are controlled based on the set threshold value input from the operation unit connected to the vapor deposition amount control unit 50.
The vapor deposition amount control unit 50 generates a target value for the opening degree of the opening / closing mechanism of the evaporation amount adjusting means 60 including an arithmetic circuit, an input / output circuit, a filter, an I / F, an A / D, and a D / A conversion circuit. An evaporation source moving unit control system for performing feedback control of the opening generation system and the evaporation source moving unit, and an evaporation amount adjusting unit control system for performing feedback control of the opening degree of the opening / closing mechanism of the evaporation source adjusting unit 60 are provided.
The target opening generation system accepts input of initial values and measurement signals output by the deposition rate measuring means, calculates the deposition rate, moving speed, and deposition amount, and controls the generated opening target value for the evaporation amount adjusting means. It is configured to output to the system.
The evaporation source moving unit control system receives an input of a target value input from an operation unit connected to the deposition amount control unit 50, and feeds back a position measurement signal output from an evaporation source position detecting unit included in the evaporation source moving unit. The control operation such as the PID operation is performed, and the control signal is output to the evaporation source moving means.
The evaporation amount adjusting unit control system accepts input of a target value input from an operation unit connected to the evaporation amount control unit 50 or a target value generated by the target opening generation system, and an opening / closing mechanism of the evaporation amount adjusting unit 60 The position measurement signal output from the opening degree detection means provided is fed back to perform control calculation such as PID calculation, and the control signal is output to the evaporation amount adjusting means 60.

  Next, operation | movement and the vapor deposition method of the vapor deposition apparatus 2 which concern on 2nd Embodiment are demonstrated.

Similarly to the vapor deposition apparatus 1, the base material 5 to be vapor-deposited is carried into the vapor deposition chamber 20 through the opening on the outer surface of the vapor deposition chamber 20 in advance. And the base material 5 is fixed by the base material fixing means 6 above the vapor deposition chamber 20, the vapor deposition surface is hold | maintained toward the evaporation source 10 below the vapor deposition chamber 20, and temperature is adjusted as needed. At this time, the vapor deposition chamber 20 is brought into a high vacuum state by operating the vacuum pump 21.
The vapor deposition material container 13 of the evaporation source 10 stores a vapor deposition material deposited on the base material 5, and physical property information of this vapor deposition material, for example, density information, is stored in the vapor deposition rate measuring means.

In this vapor deposition apparatus 2, as in the vapor deposition apparatus 1, the correction coefficient α is calculated from the film formation profile acquired in the calibration operation performed prior to the normal operation, and the target vapor deposition amount (D _d ) and the target forward vapor deposition amount. After the target values of (D ₁₀ ), the forward travel speed (V ₁ ), and the forward deposition rate (R ₁₀ ) are set, normal operation is started. First, the heating means 12 included in the evaporation source 10 is operated, and the vapor deposition material stored in the vapor deposition material container 13 is heated. The heated vapor deposition material is gradually vaporized, and the vaporized vapor deposition material is discharged from the discharge port 11 into the vapor deposition chamber 20.

Next, the vapor deposition material discharged from the evaporation source 10 is measured by the first vapor deposition rate measuring means 41 for the vapor deposition rate of the vapor deposition material at the reciprocating start position P1.
FIG. 4 is a diagram illustrating the operation of the vapor deposition apparatus according to the second embodiment.
As shown in FIG. 4A, at the start of operation, the evaporation source 10 is stopped at the start position P <b> 1 below the first vapor deposition rate measuring means 41, and vaporized released into the vapor deposition chamber 20. The vapor deposition material is incident on the probe of the first vapor deposition rate measuring means 41 to measure the vapor deposition rate, and the vapor deposition rate measurement signal output from the first vapor deposition rate measuring unit 41 is input to the vapor deposition amount control unit 50. Is done.
The vapor deposition rate (start position vapor deposition rate (R ₁ )) of the vapor deposition material at the start position P1 of the reciprocation of the evaporation source 10 measured here indicates the value of the expected film thickness to be formed on the substrate 5. Yes. The output of the heating unit 12 and the opening degree of the opening / closing mechanism of the evaporation amount adjusting unit 60 at the start position P1 are set so that the start position vapor deposition rate (R ₁ ) matches the preset forward pass vapor deposition rate (R ₁₀ ). And adjusted by.
In this vapor deposition apparatus 2, the amount of vapor deposition material released from the evaporation source 10 controlled so as to match the forward vapor deposition rate (R ₁₀ ) is substantially constant in the forward path until the evaporation source 10 reaches the intermediate position P2. Is controlled by the evaporation amount adjusting means 60. Further, the opening degree of the opening / closing mechanism of the evaporation amount adjusting means 60 at this time is maintained at a medium level so that it can be adjusted in a subsequent process.
Thereafter, when the forward vapor deposition rate (R ₁₀ ) reaches the target value, the shielding means that isolates the base material 5 from the evaporation source 10 is opened, and the vaporized vapor deposition material starts to be released to the base material 5.

Next, as in the vapor deposition apparatus 1, when the evaporation source moving means is driven, the forward movement of the evaporation source 10 is started, and the evaporation source 10 is moved to the intermediate position P2 of the reciprocation. In addition, film formation on the substrate 5 is performed.
When the drive unit 30 of the evaporation source moving means is operated, as shown in FIG. 4A, the evaporation source 10 supported by the mover 31 is set to the set forward movement speed (V ₁ ). The movement is started along the guide portion 32 in the direction of the reciprocating intermediate position P2.
Then, the evaporation source 10 supported by the movable element 31 has a constant speed at which the forward movement speed (V ₁ ) substantially reaches the target value by the time it passes from the start position P1 to a position immediately below one end of the base material 5. 5, the deposition surface of the base material 5 is scanned in the section from directly under one end to directly under the other end to perform deposition on the base material 5.
Thereafter, the evaporation source 10 passes through the other end of the base material 5 and reaches an intermediate position P2 which is a return position of the reciprocating motion.

Next, as in the vapor deposition apparatus 1, the vapor deposition material discharged from the evaporation source 10 is measured by the second vapor deposition rate measuring means 42 for the vapor deposition rate of the vapor deposition material at the reciprocating intermediate position P <b> 2.
As shown in FIG. 4B, when the evaporation source 10 reaches the intermediate position P2 below the second vapor deposition rate measuring means 42, the vapor deposition material released from the evaporation source 10 becomes the second vapor deposition rate. The vapor deposition rate is measured by entering the probe of the measuring unit 42, and the vapor deposition rate measurement signal output from the second vapor deposition rate measuring unit 42 is input to the vapor deposition amount control unit 50.
The vapor deposition rate of the vapor deposition material (intermediate position vapor deposition rate (R ₂ )) at the intermediate position P2 of the reciprocating movement of the evaporation source 10 measured here is usually started when the vapor deposition amount varies as in the vapor deposition apparatus 1. It becomes a value different from the position deposition rate (R ₁ ). In general, the value of the intermediate position deposition rate (R ₂ ) tends to be lower than the value of the start position deposition rate (R ₁ ).

Next, based on the starting position deposition rate measured by the first deposition rate measuring means 41, the intermediate position deposition rate measured by the second deposition rate measuring means 42, and the forward movement speed of the reciprocating movement by the evaporation source moving means. The opening degree of the opening / closing mechanism of the evaporation amount adjusting means 60 is adjusted so that the return deposition amount by the evaporation source 10 is added to the outbound deposition amount to be the deposition amount that matches the target deposition amount.
As in the vapor deposition apparatus 1, the evaporation source 10 has a constant vapor deposition equal to the start position vapor deposition rate (R ₁ ) at the forward movement speed (V ₁ ) controlled to a predetermined target value in the reciprocating movement. It is assumed that vapor deposition is performed at a rate (outward vapor deposition rate (R ₁₀ )) and is operated to achieve a preset target forward vapor deposition amount (D ₁₀ ).
However, the vapor deposition rate of the vapor deposition material (intermediate position vapor deposition rate (R ₂ )) measured at the reciprocating intermediate position P2 is different from the start position vapor deposition rate (R ₁ ) due to fluctuations in the vapor deposition amount. Yes.

Therefore, the vapor deposition amount control unit 50 that has received the input of the measurement signal of the vapor deposition rate calculates the effective value of the forward vapor deposition amount (D ₁ ) based on Equation 3 as in the vapor deposition apparatus 1.
In this vapor deposition apparatus 2, the amount of vapor deposition material released from the evaporation source 10 in the return path is calculated by adding the return vapor deposition amount (D ₂ ) from the evaporation source 10 to the effective value of the forward vapor deposition quantity (D ₁ ). The deposition amount is controlled to be equal to the amount (D _d ). Further, the moving speed of the evaporation source is controlled to a constant speed in the reciprocating forward path and the backward path, and the same target value as the forward path moving speed (V ₁ ) is set for the backward path moving speed (V ₂ ).

Therefore, the vapor deposition amount control unit 50 assumes that the intermediate position vapor deposition rate (R ₂ ) measured by the second vapor deposition rate measuring unit 42 is constant in the return path of the reciprocation of the evaporation source 10. A return vapor deposition rate (R ₂₀ ) for achieving a target return vapor deposition amount (D ₂₀ ) corresponding to the difference between the effective values of the vapor deposition amount (D _d ) and the forward vapor deposition amount (D ₁ ) is calculated.
When the target return deposition amount (D ₂₀ ) is used, the return deposition rate (R ₂₀ ) to be deposited in the return pass is expressed by the following Equation 8.
R ₂₀ = D ₂₀ / D ₁ * R ₂ = (D _d −D ₁ ) / D ₁ * R ₂ (Formula 8)
The vapor deposition amount control unit 50 calculates the forward vapor deposition amount (D ₁₎ calculated using the relationship between the intermediate position vapor deposition rate (R ₂ ) and the backward vapor deposition rate (R ₂₀ ), and the forward movement speed according to Equation 3. ) After calculating the backward deposition rate (R ₂₀₎ on the basis of the effective value of, generating a target value of control of the evaporation amount adjusting means 60 for achieving backward deposition rate (R _20), control the evaporation amount adjusting means 60 Output a signal.
Then, the opening / closing mechanism of the evaporation amount adjusting means 60 at the intermediate position P2 is set so that the intermediate position vapor deposition speed (R ₂ ) measured by the second vapor deposition speed measuring means 42 matches the return vapor deposition speed (R ₂₀ ). The opening is adjusted.

Next, when the evaporation source moving means is operated in the opposite direction, the return path of the reciprocating movement of the evaporation source 10 is started, and the evaporation source 10 is moved to the reciprocating start position P1 at the adjusted return path moving speed. During the process, the vapor deposition material is adhered to the base material 5 to form a film again.
The return path moving speed (V ₂ ) of the evaporation source moving means is controlled to the same speed as the forward path moving speed (V ₁ ), and the amount of vapor deposition material released from the evaporation source 10 in the return path is different from the amount released in the outbound path. As shown in FIG. 4C, the evaporation source 10 scans the vapor deposition surface of the substrate 5 in a section from immediately below one end of the substrate 5 to directly below the other end, as shown in FIG. 5 is again deposited and returned to the reciprocating start position P1.
As described above, when the evaporation source 10 is reciprocated with respect to the base material 5 to perform the vapor deposition in both the forward path and the backward path, the vapor deposition on the base material 5 is completed. When the shielding means provided in the vapor deposition chamber 20 is closed, the adhesion of the vapor deposition material to the substrate 5 is regulated, and the vapor deposited substrate 5 is carried out.

Alternatively, when the evaporation source 10 returns to the start position P1, one reciprocation is completed, and the operation can be performed so that the reciprocation is performed again as necessary.
In such an operation, at the reciprocation start position P1, the vapor deposition rate of the vapor deposition material at the reciprocation start position P1 is again measured by the first vapor deposition rate measuring means 41.
In the vapor deposition apparatus 2, the evaporation source 10 is assumed to perform vapor deposition at a constant vapor deposition rate (return vapor deposition rate (R ₂₀ )) equal to the adjusted intermediate position vapor deposition rate (R ₂ ) in the reciprocating return path. Thus, the system is operated so as to achieve a preset target return deposition amount (D ₂₀ ).
However, as in the forward path, the deposition rate of the deposition material (start position deposition rate (R _1n )) measured again at the start position P1 of the reciprocating motion is different from the intermediate position deposition rate (R ₂ ) as the deposition amount varies. Have different values. In general, the value of the start position deposition rate (R _1n ) tends to be lower than the value of the intermediate position deposition rate (R ₂ ).

Therefore, the deposition amount control unit 50 that has received the input of the measurement signal of the deposition rates, as well as in the vapor deposition apparatus 1, based on Equation 5, and calculates the effective value of the return deposition amount (D _2).

Then, the vapor deposition amount control unit 50 adds the effective value of the calculated return vapor deposition amount (D ₂ ) and the effective value of the forward vapor deposition amount (D ₁ ), and the target vapor deposition to be deposited on the substrate 5. The vapor deposition amount difference (D _dn ) from the amount (D _d ) is calculated.

The vapor deposition amount control unit 50 determines whether or not the vapor deposition amount difference (D _dn ) is less than a predetermined threshold value. This threshold value is set, for example, via an operation unit connected to the deposition amount control unit 50.

When the deposition amount difference (D _dn ) is less than the predetermined threshold value, the deposition on the base material 5 is terminated assuming that a film having a predetermined thickness to be formed is formed. When the shielding means provided in the vapor deposition chamber 20 is closed, the adhesion of the vapor deposition material to the substrate 5 is regulated, and the vapor deposited substrate 5 is carried out.

When the vapor deposition amount difference (D _dn ) is equal to or greater than a predetermined threshold, vapor deposition is continued by the reciprocating movement of the evaporation source 10 with respect to the substrate 5 again.

The amount of the vapor deposition material released from the evaporation source 10 in the reciprocating reciprocating movement is such that the amount of vapor deposition on the substrate 5 due to the reciprocating reciprocation of the evaporation source becomes a value corresponding to the vapor deposition amount difference (D _dn ). Set to The sum of the reciprocating forward deposition amount (D _1n ) and the return deposition amount (D _2n ) is the deposition amount difference (D _dn ).
Therefore, the target outbound vapor deposition amount (D _10n ) to be deposited on the substrate 5 in the outbound _path is a value equal to the deposition amount difference (D _dn ) to be deposited in the reciprocating motion, or equally divided between the outbound path and the return path. About 50% of the deposition amount difference (D _dn ) so that the deposited film is formed, and about 60 to 90% of the deposition amount difference (D _dn ) so as to reduce errors due to fluctuations in the deposition rate. The amount that becomes the value of is set again.

Therefore, the vapor deposition amount control unit 50 assumes that the vapor deposition rate is constant in the reciprocating path of the evaporation source 10 to be performed again, and the target outbound path to be deposited on the substrate 5 in the reciprocating path. A target value of the forward deposition rate (R _10n ) for achieving the deposition amount (D _10n ) is generated again.
When the target outbound vapor deposition amount (D _10n ) is used, the outbound vapor deposition rate (R _10n ) is expressed by the following formula 9.
V _1n = α * R _10n / D _10n (Equation 9)

The vapor deposition amount control unit 50 calculates the forward vapor deposition rate (R _10n ) based on the relationship between the target forward vapor deposition amount (D _10n ) and the forward movement speed (V _1n ) for the reciprocating motion performed again. A target value for control of the evaporation amount adjusting means 60 that achieves the forward deposition rate (R _10n ) is generated, and a control signal is output to the evaporation amount adjusting means 60.
Then, the opening / closing mechanism of the evaporation amount adjusting unit 60 at the start position P1 is set so that the start position deposition rate (R _1n ) measured by the first deposition rate measuring unit 41 coincides with the forward deposition rate (R _10n ). The opening is adjusted.

Thereafter, the evaporation source moving means is driven in the same manner as the first reciprocating motion, so that the forward movement of the reciprocating motion of the evaporation source 10 is started and the evaporation source 10 is moved to the intermediate position P2 of the reciprocating motion. Film formation is performed by attaching a vapor deposition material to the substrate 5.
At the intermediate position P2 of the reciprocating motion, the vapor deposition material released from the evaporation source 10 again has the intermediate position vapor deposition rate (R _2n ) at the intermediate position P2 of the reciprocating motion by the second vapor deposition rate measuring means 42. It is measured.

The return vapor deposition rate (R _20n ) to be deposited in the reciprocating reciprocating movement performed again is calculated in the same manner as the first reciprocating movement, and is expressed by the following equation (10).
R _20n = (D _dn −D _1n ) / D _1n * R _2n (Expression 10)
The deposition amount control unit 50 calculates the forward deposition amount (D _1n) calculated using the relationship between the intermediate deposition rate (R _2n ) and the backward deposition rate (R _20n ), and the forward travel speed according to Equation 3. ) based on the effective value of, when calculating the return deposition rate (R _20n), generating a target value of control of the evaporation amount adjusting means 60 for achieving backward deposition rate (R _20n), the evaporation amount adjusting means 60 Output a control signal.
Then, the opening / closing mechanism of the evaporation amount adjusting means 60 at the intermediate position P2 is set so that the intermediate position vapor deposition speed (R _2n ) measured by the second vapor deposition speed measuring means 42 coincides with the return vapor deposition speed (R _20n ). The opening is adjusted.

Thereafter, when the evaporation source moving means is operated in the opposite direction, the return path of the reciprocating movement of the evaporation source 10 is started, and the evaporation source 10 is moved to the reciprocating start position P1 at the adjusted return path moving speed. In the meantime, the deposition material is adhered to the substrate 5 and film formation is performed again.
Then, the evaporation source 10 returns to the reciprocation start position P1, and the vapor deposition amount control unit 50 determines whether a film having a predetermined thickness to be formed has been formed, as in the first reciprocation. Is done.
Thereafter, a film having a predetermined thickness is formed by repeating the same process.

According to such a vapor deposition apparatus and vapor deposition method, the amount of vapor deposition material deposited on the substrate varies when the evaporation source that releases the vaporized vapor deposition material is moved relative to the substrate to form a film. Even in this case, since the deposition amount can be corrected in the return path of the reciprocation of the evaporation source, a film having a predetermined thickness can be formed with high accuracy. Furthermore, a film having a predetermined thickness can be formed with higher accuracy by performing the reciprocating motion a plurality of times. Moreover, since the deposition rate measuring means installed at both ends of the reciprocating motion is sufficient as the film thickness measuring means required for that purpose, the maintenance efficiency related to the installation and repair of the film thickness measuring means is improved.
In addition, it is possible to form a film with a predetermined thickness by dividing the reciprocating path of the evaporation source into the forward path and the backward path, thereby reducing the influence of the deposition amount over time and the geometric condition fluctuation. Can do.
Moreover, since the amount of vapor deposition is adjusted by the amount of vapor deposition material released from the evaporation source, stable adjustment can be performed.

[Third Embodiment]
Next, other embodiments of the vapor deposition apparatus and the vapor deposition method according to an embodiment of the present invention will be described.

FIG. 5 is a configuration diagram of the vapor deposition apparatus 3 according to the third embodiment. The vapor deposition apparatus 3 is different from the vapor deposition apparatus 1 according to the first embodiment in that two evaporation sources supported by the evaporation source moving unit are provided.
The vapor deposition apparatus 3 is an apparatus capable of forming a film in which the concentration of each vapor deposition component is a predetermined concentration by co-depositing different vapor deposition materials on the base material 5 from two evaporation sources. ing.
In this vapor deposition apparatus 3, the difference between the effective vapor deposition amount in the forward path of each evaporation source and the target vapor deposition amount is that the moving speed of the evaporation source in the return path is changed to a speed based on the effective vapor deposition amount in the forward path for one evaporation source. By doing so, the return vapor deposition amount is adjusted. In addition, since the two evaporation sources supported by the evaporation source moving means move together at a set moving speed, for the other evaporation source, the amount of vapor deposition material released from the evaporation source in the return path is The return vapor deposition amount is adjusted by changing the discharge amount based on the effective vapor deposition amount in the forward path.
Such a deposition apparatus 3 deposits a host material for forming the light emitting layer of the organic EL element by an evaporation source in which the moving speed of the return path in the reciprocating movement is changed to adjust the amount of the return path deposition, It is possible to operate so as to co-deposit the dopant material forming the light emitting layer of the organic EL element by the sub-evaporation source in which the amount of the vapor deposition material is changed and the return vapor deposition amount is adjusted. Even in the case where there is a difference in the component concentration ratio in the film formed like the host material and the dopant material, a film in which the concentration of each vapor deposition component becomes a predetermined concentration can be formed with high accuracy. It is suitable for forming a light emitting layer in an element such as an EL element in which chromaticity is easily affected by the component concentration ratio of the organic layer.

With reference to FIG. 5, the structure of the vapor deposition apparatus 3 is demonstrated.
The evaporation apparatus 3 mainly includes an evaporation source 10A and a sub evaporation source 10B, an evaporation chamber 20, an evaporation source moving means (30, 31, 32), a first evaporation rate measuring means 41A, and a first auxiliary evaporation. It is comprised so that the speed measurement means 41B, the 2nd vapor deposition speed measurement means 42A and the 2nd sub vapor deposition speed measurement means 42B, and the vapor deposition amount control part 50 may be included.
In the vapor deposition apparatus 3, as shown by a broken line in FIG. 5, the vapor deposition amount control unit 50 includes a first vapor deposition rate measuring unit 41A, a first sub vapor deposition rate measuring unit 41B, a second vapor deposition rate measuring unit 42A, Second evaporation rate measuring means 42B, evaporation source moving means, and evaporation amount adjusting means 60 for adjusting the amount of evaporation material emitted from the auxiliary evaporation source 10B are connected via a signal line.
In the following description, the evaporation source 10A and the sub-evaporation source 10B are simply the evaporation source, and the first vapor deposition rate measuring unit 41A and the first sub-vapor deposition rate measuring unit 41B are simply the first vapor deposition rate measuring unit. The second vapor deposition rate measuring unit 42A and the second sub vapor deposition rate measuring unit 42B may be simply referred to as a second vapor deposition rate measuring unit.

In this vapor deposition apparatus 3, the two evaporation sources 10A and the sub-evaporation source 10B are supported by the movable element 31 of the evaporation source moving means such that the linear vapor deposition material discharge ports 11 are arranged in parallel. .
The evaporation source 10 </ b> A and the sub-evaporation source 10 </ b> B have a vapor deposition material discharge port 11 and are configured to include a heating unit 12 and a vapor deposition material container 13, as in the vapor deposition apparatus 1. Although it has a linear discharge port 11 having a predetermined length in the direction, the evaporation source 10A and the sub-evaporation source 10B do not have to have the same heating means 12 and vapor deposition material container 13, It can be set as a different structure according to the kind and physical property of the vapor deposition material vapor-deposited with each evaporation source. In the case where a film having a predetermined component ratio is formed by co-evaporation of different vapor deposition materials, it is preferable to deposit a vapor deposition material having a high concentration by the evaporation source 10A.

As the vapor deposition rate measuring means, the same one as used in the vapor deposition apparatus 1 is used, but one having a shutter so as to manage the incidence of the vapor deposition material on the probe is preferable.
As shown in FIG. 5, in the vapor deposition apparatus 3, the first vapor deposition rate measuring unit 41A and the second vapor deposition rate measuring unit 42A measure the vapor deposition rate of the vapor deposition material released from the vapor source 10A, and The sub vapor deposition rate measuring means 41B and the second sub vapor deposition rate measuring unit 42B measure the vapor deposition rate of the vapor deposition material released from the sub evaporation source 10B and the reciprocating start position P1 and intermediate position of the evaporation source. In each of P2, it is arranged in the vicinity of the base material so that the distance to the evaporation source is the same distance as the base material.
Then, the vapor deposition material released from the evaporation source 10A through the reciprocation of the evaporation source enters the first sub evaporation rate measuring unit 41B and the second sub evaporation rate measuring unit 42B, or from the sub evaporation source 10B. As shown in FIG. 5, it is separated by a partition plate 24 as necessary so that the released vapor deposition material does not enter the first vapor deposition rate measuring means 41A and the second vapor deposition rate measuring means 42A. The opening / closing of the shutter is controlled so that the probe is exposed in the vapor deposition chamber 20 only when the evaporation source is located at the start position P1 and the intermediate position P2 where the vapor deposition rate is measured.
Further, since a linear evaporation source is used in the present embodiment, it is preferable that the deposition rate along the longitudinal direction (depth direction in FIG. 5) of the discharge port 11 of the evaporation source 10 is monitored. Therefore, a plurality of these vapor deposition rate measuring means may be provided along the longitudinal direction of the discharge ports 11 of the evaporation sources 10A and 10B.

  In the vapor deposition apparatus 3, the vapor deposition amount control unit 50 is based on the vapor deposition rate measured by the vapor deposition rate measuring means and the forward movement speed of the reciprocating movement by the evaporation source moving means. The amount of vapor deposition material released by the evaporation amount adjusting means 60 is adjusted. Further, the continuation and termination of the vapor deposition accompanying the reciprocation of the evaporation source are controlled based on the set threshold value input from the operation unit connected to the vapor deposition amount control unit 50. The vapor deposition amount control unit 50 includes an evaporation source moving means control system similar to that in the vapor deposition apparatus 1 and a target opening generation system and an evaporation amount adjustment means control system similar to those in the vapor deposition apparatus 2.

  Next, operation | movement and the vapor deposition method of the vapor deposition apparatus 3 which concern on 3rd Embodiment are demonstrated.

Similar to the vapor deposition apparatus 1, the base material 5 to be vapor-deposited is carried into the vapor deposition chamber 20 in advance through the opening on the outer surface of the vapor deposition chamber 20. And the base material 5 is fixed by the base material fixing means 6 above the vapor deposition chamber 20, the vapor deposition surface is hold | maintained toward the evaporation source 10 below the vapor deposition chamber 20, and temperature is adjusted as needed. At this time, the vapor deposition chamber 20 is in a high vacuum state by operating the vacuum pump 21.
The vapor deposition material container 13 of the evaporation sources 10 </ b> A and 10 </ b> B stores a vapor deposition material deposited on the base material 5. For example, a host material is stored in the vapor deposition material container 13 of the evaporation source 10A, and a dopant material is stored in the vapor deposition material container 13 of the sub-evaporation source 10B. Physical property information of these vapor deposition materials, such as density information, is stored in each vapor deposition rate measuring means.

For the evaporation source 10A provided in the vapor deposition apparatus 3, as in the vapor deposition apparatus 1, the correction coefficient α is calculated from the film formation profile acquired in the calibration operation, and the target vapor deposition amount (D _dA ) and the target forward vapor deposition amount are calculated. Target values for (D _10A ), forward travel speed (V ₁ ), and forward deposition speed (R _10A ) are set. For the sub-evaporation source 10B, the correction coefficient β is calculated from the film formation profile acquired in the calibration operation separately performed according to the process in the vapor deposition apparatus 1, and the forward movement speed (V ₁₎ determined for the evaporation source 10A. ), Target values for the target forward deposition amount (D _10B ) and the forward deposition rate (R _10B ) are determined.
When the target value is set, the normal operation of the vapor deposition apparatus 3 is started. First, the heating means 12 included in the evaporation sources 10 </ b> A and 10 </ b> B is operated, and the vapor deposition material stored in the vapor deposition material container 13 is heated. The heated vapor deposition material is gradually vaporized, and the vaporized vapor deposition material is discharged from the discharge port 11 into the vapor deposition chamber 20.

Next, the vapor deposition material discharged from the evaporation source 10A is measured by the first vapor deposition rate measuring means 41A, and the vapor deposition rate of the vapor deposition material at the reciprocating start position P1 is measured and released from the sub evaporation source 10B. As for the vapor deposition material, the vapor deposition rate of the vapor deposition material at the reciprocating start position P1 is measured by the first sub vapor deposition rate measuring means 41B.
FIG. 6 is a diagram illustrating the operation of the vapor deposition apparatus according to the third embodiment.
As shown in FIG. 6A, at the start of operation, the evaporation sources 10A and 10B are stopped at the start position P1 below the first vapor deposition rate measuring means 41A and 41B, and discharged into the vapor deposition chamber 20. The vaporized vapor deposition material is incident on the probe of the first vapor deposition rate measuring means 41A and 41B, the vapor deposition rate is measured, and the vapor deposition rate measurement signal output by the first vapor deposition rate measuring unit 41A and 41B. Is input to the deposition amount control unit 50.
The deposition rate of the deposition material at the start position P1 of the reciprocation of the evaporation source 10A (start position deposition rate (R _1A )) measured here and the deposition rate of the deposition material at the start position P1 of the reciprocation of the sub-evaporation source 10B ( The starting position vapor deposition rate (R _1B )) indicates the value of the expected film thickness to be formed on the substrate 5. The output of the heating unit 12 and the evaporation amount adjusting unit 60 at the start position P1 so that the start position deposition rate (R _1A , R _1B ) matches the preset outbound pass rate (R _10A , R _10B ). And the opening degree of the opening / closing mechanism. At this time, the opening degree of the opening / closing mechanism of the evaporation amount adjusting means 60 of the sub-evaporation source 10B is maintained at a medium level so that it can be adjusted in a subsequent process.
Thereafter, when the forward vapor deposition rate (R _10A , R _10B ) reaches the target value, the shielding means for isolating the base material 5 from the evaporation sources 10A, 10B is opened, and the vaporized vapor deposition material is released to the base material 5 Is started.

Next, when the evaporation source moving means is driven, the reciprocating movement of the evaporation sources 10A and 10B is started, and the base material is moved while the evaporation sources 10A and 10B are moved to the intermediate position P2 of the reciprocating movement. A vapor deposition material is attached to 5 to form a film by co-deposition.
When the drive unit 30 of the evaporation source moving means is operated, as shown in FIG. 6A, the evaporation sources 10A and 10B supported by the movable element 31 are set to the set forward movement speed (V ₁ ). Then, the movement is started along the guide portion 32 in the direction of the reciprocating intermediate position P2.
Then, the evaporation sources 10A and 10B supported by the mover 31 have a constant speed at which the forward movement speed (V ₁ ) substantially reaches the target value before passing through the position immediately below one end of the base material 5 from the start position P1, Vapor deposition is performed on the base material 5 by scanning the vapor deposition surface of the base material 5 in a section from just below one end of the base material 5 to just below the other end.
Thereafter, the evaporation sources 10A and 10B pass through the other end of the base material 5 and reach the intermediate position P2, which is a reciprocating folding position.

Next, the vapor deposition material discharged from the evaporation sources 10A and 10B is measured by the second vapor deposition rate measuring means 42A and 42B for the vapor deposition rate of the vapor deposition material at the reciprocating intermediate position P2.
As shown in FIG. 6B, when the evaporation sources 10A and 10B reach the intermediate position P2 below the second evaporation rate measuring means 42A and 42B, the evaporation materials released from the evaporation sources 10A and 10B are The vapor deposition rate is measured by being incident on the measuring elements of the second vapor deposition rate measuring means 42A and 42B, and the vapor deposition rate measurement signal output from the second vapor deposition rate measuring means 42A and 42B is the vapor deposition amount control unit 50. Is input.
The deposition rate of the deposition material (intermediate position deposition rate (R _2A )) at the intermediate position P2 of the reciprocating movement of the evaporation source 10A and the deposition rate of the deposition material at the intermediate position P2 of the reciprocating movement of the sub-evaporation source 10B (measured here) The intermediate position deposition rate (R _2B )) is normally a value different from the start position deposition rate (R _1A , R _1B ) as the deposition amount varies. In general, the value of the intermediate position deposition rate (R _2A , R _2B ) tends to be lower than the value of the start position deposition rate (R _1A , R _1B ).

  Next, based on the starting position deposition rate measured by the first deposition rate measuring means 41A, the intermediate position deposition rate measured by the second deposition rate measuring means 42A, and the forward movement speed of the reciprocating movement by the evaporation source moving means. The return movement speed of the reciprocating movement by the evaporation source moving means is adjusted so that the return evaporation amount by the evaporation source 10A is equal to the target evaporation amount by adding the outbound evaporation amount, and the first sub evaporation rate is adjusted. Based on the starting position vapor deposition rate measured by the measuring unit 41B, the intermediate position vapor deposition rate measured by the second sub vapor deposition rate measuring unit 42B, and the forward movement speed of the reciprocating movement by the evaporation source moving unit, the return path by the sub evaporation source 10B. The opening degree of the opening / closing mechanism of the evaporation amount adjusting means 60 of the sub-evaporation source 10B is adjusted so that the evaporation amount becomes the evaporation amount that matches the target evaporation amount by adding up with the outward evaporation amount.

The evaporation source 10A has a constant deposition rate (outward deposition rate (R _10A ) equal to the start position deposition rate (R _1A ) at the outbound travel speed (V ₁ ) controlled to a predetermined target value in the reciprocating outbound _path. )) And is operated to achieve a preset target forward deposition amount (D _10A ).
However, the vapor deposition rate of the vapor deposition material (intermediate position vapor deposition rate (R _2A )) measured at the reciprocating intermediate position P2 is different from the start position vapor deposition rate (R _1A ) due to fluctuations in the vapor deposition amount. Yes.

Therefore, the vapor deposition amount control unit 50 that has received the input of the measurement signal of the vapor deposition rate uses the value of the intermediate position vapor deposition rate (R _2A ) measured by the second vapor deposition rate measuring means 42A, based on the evaporation source 10A. The effective value of the outward deposition amount (D _1A ) formed on the material 5 is calculated.
When the forward movement speed (V ₁ ) of the evaporation source 10 is used, the effective value of the forward deposition amount (D _1A ) is expressed by the following formula 11.
D _1A = α * E (R _2A ) / V ₁ (Formula 11)
(In the formula, E (R _2A ) represents the average of the measured deposition rates (R _2A , R _1A ).)

Therefore, the vapor deposition amount control unit 50 evaporates under the assumption that the intermediate position vapor deposition rate (R _2A ) measured by the second vapor deposition rate measuring means 42 is constant in the return path of the reciprocation of the evaporation source 10. The target value of the return movement speed (V ₂ ) for the source 10A to achieve the target return deposition amount (D _20A ) corresponding to the difference between the effective values of the target deposition amount (D _dA ) and the forward deposition amount (D _1A ). Generate.
When the target return deposition amount (D _20A ) is used, the return travel speed (V ₂ ) is expressed by the following formula 12.
_{V 2 = α * R 2A /} D 20A = D 1A / (D dA -D 1A) * V 1 ··· ( Formula 12)
Deposition amount control unit 50, and the relationship of such forward moving speed _{(V 1)} and the backward traveling speed _{(V 2),} on the basis of the effective value of the forward-deposition amount _{(D 1A),} the backward moving speed _{(V 2} ) Is output to the evaporation source moving means.

On the other hand, the sub-evaporation source 10B has a constant vapor deposition rate (outward vapor deposition rate) equal to the start position vapor deposition rate (R _1B ) at the forward movement speed (V ₁ ) controlled to a predetermined target value in the reciprocating path. (R _10B )) is assumed to be performed and is operated to achieve a preset target outbound vapor deposition amount (D _10B ).
However, the vapor deposition rate of the vapor deposition material (intermediate position vapor deposition rate (R _2B )) measured at the reciprocating intermediate position P2 is different from the start position vapor deposition rate (R _1B ) due to fluctuations in the vapor deposition amount. Yes.
Therefore, the vapor deposition amount control unit 50 that has received the input of the vapor deposition rate measurement signal calculates the effective value of the forward vapor deposition amount (D _1B ) based on the following equation (13).
D _1B = β * E (R _2B ) / V ₁ (Formula 13)
(In the formula, β represents a correction coefficient, and E (R _2B ) represents an average of measured deposition rates (R _2B , R _1B ).)

In this vapor deposition apparatus 3, the amount of vapor deposition material released from the sub-evaporation source 10B in the return path is calculated by adding the return vapor deposition amount (D _2B ) from the sub-evaporation source 10B to the effective value of the forward vapor deposition amount (D _1B ). The target value for the control of the evaporation amount adjusting means 60 is set so that the evaporation amount coincides with the target evaporation amount (D _dB ).

Therefore, the vapor deposition amount control unit 50 assumes that the intermediate position vapor deposition rate (R _2B ) measured by the second sub vapor deposition rate measuring unit 42B is constant in the return path of the reciprocation of the sub evaporation source 10B. The return vapor deposition rate (R _20B ) for achieving the target return vapor deposition amount (D _20B ) corresponding to the difference between the effective values of the target vapor deposition amount (D _dB ) and the forward vapor deposition amount (D _1B ) is calculated.
The return vapor deposition rate (R _20B ) to be deposited on the return path by the sub-evaporation source 10B is expressed by the following equation (14).
_{R 20B = D 20B / D 1B} * R 2B = (D dB -D 1B) / D 1B * R 2B ··· ( Formula 14)
The vapor deposition amount control unit 50 calculates the forward vapor deposition amount (D _1B) calculated using the relationship between the intermediate position vapor deposition rate (R _2B ) and the backward vapor deposition rate (R _20B ), and the forward movement speed according to Equation 13. ) After calculating the backward deposition rate (R _20B) on the basis of the effective value of, generating a target value of control of the evaporation amount adjusting means 60 for achieving backward deposition rate (R _20B), the amount of evaporation of the secondary evaporation source 10B A control signal is output to the adjusting means 60.
Then, the opening / closing mechanism of the evaporation amount adjusting means 60 at the intermediate position P2 so that the intermediate position evaporation speed (R _2B ) measured by the second sub-deposition speed measuring means 42B coincides with the return vapor deposition speed (R _20B ). Is adjusted.

Next, when the evaporation source moving means is operated in the opposite direction, the reciprocating movement of the evaporation sources 10A and 10B is started and the reciprocating movement of the evaporation sources 10A and 10B is started at the adjusted return moving speed. During the movement to the position P1, the vapor deposition material is attached to the base material 5, and film formation is performed again.
The return path moving speed (V ₂ ) of the evaporation source moving means is controlled to a speed different from the outbound path moving speed (V ₁ ), and the amount of vapor deposition material released from the sub-evaporation source 10B in the return path is the same as the amount released in the outbound path. As shown in FIG. 6C, the evaporation sources 10 </ b> A and 10 </ b> B scan the vapor deposition surface of the base material 5 in a section from just below one end of the base material 5 to just below the other end. Then, vapor deposition is performed again on the base material 5 to return to the reciprocating start position P1.
Thus, when evaporation sources 10A and 10B reciprocate with respect to the base material 5 and vapor deposition is performed in both the forward path and the return path, the vapor deposition on the base material 5 is completed. When the shielding means provided in the vapor deposition chamber 20 is closed, the adhesion of the vapor deposition material to the substrate 5 is regulated, and the vapor deposited substrate 5 is carried out.

Alternatively, when the evaporation sources 10A and 10B return to the start position P1 and one reciprocation is completed, the operation can be performed so that the reciprocation is performed again as necessary.
In such an operation, at the reciprocation start position P1, the vapor deposition rate of the vapor deposition material at the reciprocation start position P1 is again measured by the first vapor deposition rate measuring means 41A and 41B.
In the reciprocating return path in the vapor deposition apparatus 3, the evaporation source 10A performs vapor deposition at a constant vapor deposition rate equal to the intermediate position vapor deposition rate (R _2A ), and the sub-evaporation source 10B includes the adjusted intermediate position vapor deposition rate (R _2B). ) And a constant deposition rate (return vapor deposition rate (R _20B )) is assumed to be performed and is operated to achieve a preset target return deposition amount (D _20A , D _20B ). .
However, as in the forward _path, the deposition rate of the deposition material (start position deposition rate (R _1An )) from the evaporation source 10A and the deposition rate of the deposition material from the sub-evaporation source 10B, which are measured again at the reciprocation start position P1. (Start position deposition rate (R _1Bn )) varies from the intermediate position deposition rate (R _2A , R _2B ) as the deposition amount varies.

Therefore, the vapor deposition amount control unit 50 that has received the input of the measurement signal for the vapor deposition rate calculates the effective value of the return vapor deposition amount (D _2A ) for the evaporation source 10A in the same manner as in the vapor deposition apparatus 1, and calculates the calculated return pass. Deposition amount difference (D _dAn ) between the sum of the effective value of the deposition amount (D _2A ) and the effective value of the outward deposition amount (D _1A ) and the target deposition amount (D _dA ) to be deposited on the substrate 5 ) Is calculated.
Similarly, for the sub-evaporation source 10B, the effective value of the return vapor deposition amount (D _2B ) is calculated, and the calculated effective value of the return vapor deposition amount (D _2B ) and the effective value of the forward vapor deposition amount (D _1B ) And a difference in vapor deposition amount (D _dBn ) between the value obtained by summing the values and the target vapor deposition amount (D _dB ) to be vapor deposited on the substrate 5.

The vapor deposition amount control unit 50 determines whether or not the vapor deposition amount difference (D _dAn , D _dBn ) is less than a predetermined threshold value. These threshold values are set, for example, via an operation unit connected to the deposition amount control unit 50.

When both of the vapor deposition amount differences (D _dAn , D _dBn ) are less than the predetermined threshold value, the vapor deposition on the base material 5 is completed as a film having a predetermined thickness to be formed is formed. Is done. When the shielding means provided in the vapor deposition chamber 20 is closed, the adhesion of the vapor deposition material to the substrate 5 is regulated, and the vapor deposited substrate 5 is carried out.

Deposition amount difference of the evaporation sources 10A _{(D dAn),} or if any of the deposition amount difference of the sub-evaporation source 10B _{(D DBN)} is above a predetermined threshold value, the evaporation sources 10A, 10B again substrate The vapor deposition is continued by reciprocating with respect to 5.

The forward movement speed (V _1n ) of the reciprocating motion performed again is the first time so that the amount of deposition on the substrate 5 due to the reciprocating motion of the evaporation source 10A becomes a value corresponding to the deposition amount difference (D _dAn ). It is set in the same way as the reciprocating motion.
The sum of the reciprocating forward deposition amount (D _1An ) and the return deposition amount (D _2An ) is the deposition amount difference (D _dAn ).
Therefore, the target outbound vapor deposition amount (D _10An ) to be deposited on the substrate 5 in the outbound _path is a value equal to the deposition amount difference (D _dAn ) to be deposited in the reciprocating motion, or equally divided between the outbound _path and the return _path. About 50% of the deposition amount difference (D _dAn ) so that the deposited film is formed, and about 60 to 90% of the deposition amount difference (D _dAn ) so as to reduce errors due to variations in the deposition rate. The amount that becomes the value of is set again.

Therefore, the vapor deposition amount control unit 50 _assumes that the starting position vapor deposition rate (R _1An ) measured by the first vapor deposition rate measuring means 41A is constant in the reciprocation of the evaporation source 10A that is performed again. Then, the target value of the forward movement speed (V _1n ) for achieving the target forward deposition amount (D _10An ) is generated again.
When the target outbound vapor deposition amount (D _10An ) is used, the outbound travel speed (V _1n ) is expressed by the following Expression 15.
V _1n = α * R _1An / D _10An (Expression 15)

The vapor deposition amount control unit 50 sets the target value of the forward movement speed (V _1n ) based on the relationship between the target forward vapor deposition amount (D _10An ) and the start position vapor deposition rate (R _1An ) for the reciprocating motion performed again. Is generated, a control signal is output to the evaporation source moving means.

On the other hand, the amount of vapor deposition material released from the sub-evaporation source 10B is equivalent to the vapor deposition amount difference (D _dBn ) in terms of the film thickness to be formed on the surface of the substrate 5 by the reciprocation of the evaporation source. Set to be a value.
The sum of the reciprocating forward deposition amount (D _1Bn ) and the return deposition amount (D _2Bn ) is the deposition amount difference (D _dBn ).
Therefore, the target outbound vapor deposition amount (D _10Bn ) to be deposited on the substrate 5 in the outbound _path is equal to the deposition amount difference (D _dBn ) to be deposited in the reciprocating motion, or is equally divided between the outbound _path and the return _path. About 50% of the deposition amount difference (D _dBn ) so that the deposited film is formed, and about 60 to 90% of the deposition amount difference (D _dBn ) so as to reduce errors due to variations in the deposition rate. The amount that becomes the value of is set again.

Therefore, the deposition amount control unit 50 assumes the deposition rate is constant in the reciprocation of the reciprocating motion of the sub-evaporation source 10B, and the outbound deposition rate for achieving the target outbound deposition amount (D _10Bn ). The target value of (R _10Bn ) is generated again.
When the target outbound vapor deposition amount (D _10Bn ) is used, the target outbound vapor deposition rate (R _10Bn ) is expressed by the following equation 16 under the adjusted outbound travel speed (V _1n ).
V _1n = β * R _10Bn / D _10Bn (Expression 16)

The vapor deposition amount control unit 50 generates the forward vapor deposition rate (R _10Bn ) based on the relationship between the target forward vapor deposition amount (D _10Bn ) and the forward travel speed (V _1n ) for the reciprocating motion performed again. A target value for the control of the evaporation amount adjusting means 60 that achieves the forward deposition rate (R _10Bn ) is generated, and a control signal is output to the evaporation amount adjusting means 60 of the sub evaporation source 10B.
And the opening / closing mechanism of the evaporation amount adjusting means 60 at the start position P1 so that the start position vapor deposition speed (R _1Bn ) measured by the first sub vapor deposition speed measuring means 41B matches the forward vapor deposition speed (R _10Bn ). Is adjusted.

Thereafter, the evaporation source moving means is driven in the same manner as the first reciprocation, whereby the forward movement of the reciprocation of the evaporation sources 10A and 10B is started, and the evaporation sources 10A and 10B are moved to the intermediate position P2 of the reciprocation. During the deposition, the deposition material is adhered to the substrate 5 to form a film.
Then, at the intermediate position P2 of the reciprocating motion, the vapor deposition material released from the evaporation sources 10A and 10B is again returned to the intermediate position vapor deposition speed ( R _2An , R _2Bn ) is measured.

The return path moving speed (V _2n ) of the evaporation source 10A in the return path of the reciprocating motion performed again is calculated in the same manner as in the first reciprocating motion, and is expressed by the following Expression 17.
V _2n = D _1An / (D _dAn −D _1An ) * V _1n (Expression 17)
The deposition amount control unit 50 is based on the relationship between the forward travel speed (V _1n ) and the backward travel speed (V _2n ), and the effective value of the forward _travel deposition amount (D _1An ) calculated according to Equation 11. When the target value of the return path moving speed (V _2n ) is generated, a control signal is output to the evaporation source moving means.

On the other hand, the return vapor deposition rate (R _20Bn ) to be deposited by the sub-evaporation source 10B in the reciprocating reciprocation is calculated in the same manner as the first reciprocation, and is expressed by the following equation (18).
R _20Bn = (D _dBn −D _1Bn ) / D _1Bn * R _2Bn (Formula 18)
The vapor deposition amount control unit 50 calculates the forward vapor deposition amount (D _1Bn) calculated using the relationship between the intermediate position vapor deposition rate (R _2Bn ) and the backward vapor deposition rate (R _20Bn ) and the forward movement speed according to Equation 13. ) _Is calculated based on the effective value of), a target value for the control of the evaporation amount adjusting means 60 that achieves the return vapor deposition rate (R _20Bn ) is generated, and the evaporation of the sub-evaporation source 10B is generated. A control signal is output to the amount adjusting means 60.
Then, the opening / closing mechanism of the evaporation amount adjusting means 60 at the intermediate position P2 so that the intermediate position vapor deposition speed (R _2Bn ) measured by the second sub vapor deposition speed measuring means 42B coincides with the return vapor deposition speed (R _20Bn ). Is adjusted.

Thereafter, when the evaporation source moving means is operated in the opposite direction, the reciprocating movement of the evaporation sources 10A and 10B is started, and the reciprocating start position of the evaporation sources 10A and 10B at the adjusted return moving speed. During the movement to P1, the deposition material is attached to the substrate 5 and film formation is performed again.
Then, the evaporation sources 10A and 10B return again to the reciprocating start position P1, and the deposition control unit 50 forms a film having a predetermined thickness to be formed, as in the first reciprocating motion. Is judged.
Thereafter, a film having a predetermined thickness is formed by repeating the same process.

  According to such a vapor deposition apparatus and vapor deposition method, the amount of vapor deposition material deposited on the substrate varies when the evaporation source that releases the vaporized vapor deposition material is moved relative to the substrate to form a film. Even in this case, the deposition amount can be corrected in the return path of the reciprocation of the evaporation source, so that a film having a predetermined thickness can be co-deposited with high accuracy. In addition, a film in which the concentration of each vapor deposition material component to be co-deposited has a predetermined concentration can be formed with high accuracy. Furthermore, by performing reciprocation several times, it is possible to form a film in which the concentration of each vapor deposition material component becomes a predetermined concentration with higher accuracy, and the light emission of the white light emitting organic electroluminescence element exhibiting appropriate chromaticity A layer or the like can be formed.

1, 2, 3 Vapor deposition apparatus 5 Substrate 6 Substrate fixing means 10, 10A, 10B Evaporation source 11 Release port 12 Heating means 13 Vapor deposition material container 20 Deposition chamber 21 Vacuum pump 22 Valve 24 Partition plate 30 Evaporation source moving means (drive) Part)
31 Evaporation source moving means (movable element)
32 Evaporation source moving means (guide section)
41, 41A, 41B First deposition rate measuring means 42, 42A, 42B Second deposition rate measuring means 50 Deposition amount control unit 60 Evaporation amount adjusting means P1 Start position P2 Intermediate position

Claims (9)

An evaporation apparatus that forms a film by moving an evaporation source that discharges vaporized evaporation material relative to a base material,
An evaporation source having an outlet for vapor deposition material;
A deposition chamber for accommodating the evaporation source and the base material to form a reduced pressure state;
An evaporation source moving means for supporting the evaporation source so that the discharge port faces the substrate and reciprocating the evaporation source;
First vapor deposition rate measuring means for measuring the vapor deposition rate of the vapor deposition material of the evaporation source at the start position of the reciprocation;
A second deposition rate measuring means for measuring a deposition rate of the deposition material of the evaporation source at an intermediate position of the reciprocation;
A deposition amount control unit connected to the evaporation source moving unit, the first deposition rate measuring unit, and the second deposition rate measuring unit;
Including
The deposition amount control unit
It said first deposition rate measuring means starting position deposition rate measured, the second intermediate position deposition rate deposition rate measuring means has measured, and forward deposition based on the forward moving speed of the reciprocating by the evaporation source moving means calculating the effective value of the amount, the backward deposition amount by the evaporation source, and characterized in that by summing the effective value of the forward-deposition amount adjusting backward deposition amount so that the deposition amount matches the target deposition amount Vapor deposition equipment. An evaporation apparatus that forms a film by moving an evaporation source that discharges vaporized evaporation material relative to a base material,
The deposition amount control unit
It said first deposition rate measuring means starting position deposition rate measured, the second intermediate position deposition rate deposition rate measuring means has measured, and forward deposition based on the forward moving speed of the reciprocating by the evaporation source moving means calculating the effective value of the amount, the backward deposition amount by the evaporation source, backward reciprocating by the evaporation source moving means so that the deposition amount equal to the target deposition amount is summed with the effective value of the forward-deposition amount The vapor deposition apparatus according to claim 1, wherein the moving speed is adjusted. An evaporation apparatus that forms a film by moving an evaporation source that discharges vaporized evaporation material relative to a base material,
The evaporation source includes evaporation amount adjusting means for adjusting the amount of vapor deposition material released from the evaporation source,
The deposition amount control unit
It said first deposition rate measuring means starting position deposition rate measured, the second intermediate position deposition rate deposition rate measuring means has measured, and forward deposition based on the forward moving speed of the reciprocating by the evaporation source moving means calculating the effective value of the amount, the backward deposition amount by the evaporation source, release of the vapor deposition material by the evaporation amount adjusting means so that the deposition amount equal to the target deposition amount is summed with the effective value of the forward-deposition amount vapor deposition apparatus according to claim 1 or claim 2, wherein adjusting the amount. further,
A sub-evaporation source held in an array parallel to the evaporation source on the evaporation source moving means;
Sub-evaporation amount adjusting means for adjusting the amount of vapor deposition material released from the sub-evaporation source;
A first sub-deposition rate measuring means for measuring a deposition rate of the deposition material at the start position of the reciprocation from the sub-evaporation source;
A second sub-deposition rate measuring means for measuring a deposition rate of the deposition material at an intermediate position of the reciprocating motion from the sub-evaporation source;
Including
The sub-evaporation amount adjusting unit, the first sub-deposition rate measurement unit, and the second sub-evaporation rate measurement unit are connected to the deposition amount control unit,
The deposition amount control unit
It said first deposition rate measuring means starting position deposition rate measured, the second deposition rate intermediate position deposition rate measuring means has measured, and the evaporator on the basis of the forward moving speed of the reciprocating by the evaporation source moving means source and calculating an effective value of the forward deposition amount due, backward deposition amount by the evaporation source, by the evaporation source moving means so that the deposition amount equal to the target deposition amount is summed with the effective value of the forward-deposition amount While adjusting the reciprocating speed of the return path,
Based on the start position deposition rate measured by the second sub-deposition rate measuring means, the intermediate position deposition rate measured by the second sub-deposition rate measurement means, and the forward movement speed of the reciprocating movement by the evaporation source moving means. wherein calculating the effective value of the forward-deposition amount by the sub evaporation source, the backward deposition amount by the sub-evaporation source, said summing the effective value of the forward-deposition amount so that the deposition amount equal to the target deposition amount Vice The vapor deposition apparatus according to any one of claims 1 to 3, wherein the amount of vapor deposition material released is adjusted by an evaporation amount adjusting means. The vapor deposition material emitted from the evaporation source is a host material in the organic electroluminescence element,
The vapor deposition material emitted from the sub-evaporation source is a dopant material in the organic electroluminescence element,
The vapor deposition apparatus according to claim 4, wherein a light emitting layer in the organic electroluminescence element is formed.   The vapor deposition apparatus according to any one of claims 1 to 5, wherein the evaporation source moving unit reciprocates twice or more with respect to the base material to which the vapor deposition material is attached. An evaporation method for forming a film by moving an evaporation source that releases vaporized evaporation material relative to a substrate,
An evaporation source having an outlet for vapor deposition material;
A deposition chamber for accommodating the evaporation source and the base material to form a reduced pressure state;
An evaporation source moving means for supporting the evaporation source so that the discharge port faces the substrate and reciprocating the evaporation source;
A first deposition rate measuring means for measuring a deposition rate of the deposition material at the start position of the reciprocation from the evaporation source;
A second deposition rate measuring means for measuring a deposition rate of the deposition material at an intermediate position of the reciprocating motion from the evaporation source;
A deposition amount control unit connected to the evaporation source moving unit, the first deposition rate measuring unit, and the second deposition rate measuring unit;
In a vapor deposition apparatus including:
A step of releasing the vapor deposition material from the discharge port of the evaporation source and measuring the vapor deposition rate of the vapor deposition material at the start position of the reciprocation by the first vapor deposition rate measuring means;
A process of depositing a deposition material on the substrate while moving the evaporation source to an intermediate position of the reciprocating motion,
A step of measuring a deposition rate of a deposition material at an intermediate position of the reciprocating motion by the second deposition rate measuring means;
It said first deposition rate measuring means starting position deposition rate measured, the second intermediate position deposition rate deposition rate measuring means has measured, and forward deposition based on the forward moving speed of the reciprocating by the evaporation source moving means step calculates the effective value of the amount, the backward deposition amount by the evaporation source, and combined with the effective value of the forward-deposition amount adjusting backward deposition amount so that the deposition amount matches the target deposition amount,
A process of depositing a deposition material on the base material while moving the evaporation source to the reciprocating start position with the adjusted return path deposition amount,
The vapor deposition method characterized by including. An evaporation method for forming a film by moving an evaporation source that releases vaporized evaporation material relative to a substrate,
8. The vapor deposition method according to claim 7, wherein, in the step of adjusting the return vapor deposition amount, the return vapor deposition amount is adjusted based on a reciprocal return movement speed of the evaporation source moving means. An evaporation method for forming a film by moving an evaporation source that releases vaporized evaporation material relative to a substrate,
The evaporation source includes evaporation amount adjusting means for adjusting the amount of vapor deposition material released from the evaporation source,
The vapor deposition method according to claim 7 or 8, wherein, in the step of adjusting the return vapor deposition amount, the amount of vapor deposition material released is adjusted by the evaporation amount adjusting means.

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