JP2006193782A - Film deposition system, apparatus for producing display device and method for producing display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a display device capable of stably producing a display element formed of a thin film with a desired film thickness. <P>SOLUTION: The film deposition system comprises: a vapor deposition source 410 provided with a material source for depositing a thin film composing a display element; a measuring mechanism 420 confronted with the vapor deposition source 410 in a waiting position 501 and measuring a vapor deposition rate; a scanning mechanism 430 for scanning the main face of the substrate SUB to be treated in a state of being confronted with the vapor deposition source 410 in a treatment position 502 different from the waiting position; and a velocity setting mechanism 440 for setting the scanning velocity of the scanning mechanism 430 based on the vapor deposition rate measured by the measuring mechanism 420 in such a manner that the change in the film deposition thickness on the main face of the substrate to be treated in accordance with the passage of time from the start of the scattering of the material source from the vapor deposition source 410 is compensated. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a deposition film manufacturing apparatus and a manufacturing method thereof, and more particularly to a manufacturing apparatus and a manufacturing method for manufacturing a self-luminous display element constituting a display device.

  In recent years, organic electroluminescence (EL) display devices have attracted attention as flat display devices. Since this organic EL display device is a self-luminous element, it has a wide viewing angle, can be thinned without requiring a backlight, has low power consumption, and has a high response speed. ing.

  Because of these characteristics, organic EL display devices are attracting attention as potential candidates for next-generation flat display devices that can replace liquid crystal display devices. In such an organic EL display device, an organic EL element holding an organic active layer containing an organic compound having a light emitting function between a first electrode (anode) and a second electrode (cathode) as an array substrate in a matrix form. It is configured by arranging. In such a configuration, for example, the first electrode (anode) and the organic active layer are arranged for each pixel.

In such an organic EL device manufacturing process, in addition to the first electrode and the second electrode made of a metal material, in the step of forming an organic active layer made of a low molecular weight organic compound, the material scattered from the vapor deposition source An evaporation method for evaporating the source is applicable. In the process of forming a thin film by such vapor deposition, it is known that the scattering range of the material source is regulated by a control plate (see, for example, Patent Document 1).
JP 2004-225058 A

  In the apparatus for performing the vapor deposition method as described above, in order to control the film thickness to be formed, it is obtained from a film thickness monitor arranged at a position facing the vapor deposition source in a state where the material is scattered from the vapor deposition source. The deposition rate is detected based on the measured film thickness, thereby predicting the film thickness deposited on the substrate and controlling the scattering range of the material.

  On the other hand, a part of the material source scattered from the vapor deposition source adheres to the surface of the control plate. The amount of the material source adhering to the control plate increases with the lapse of processing time, that is, the time from the start of scattering of the material source from the vapor deposition source, and the scattering range of the material source is gradually narrowed. Since the deposition rate measured with the deposition source and the film thickness monitor facing each other does not include information corresponding to the reduction of the scattering range, it is formed on the main surface of the substrate to be processed under the conditions set based on this deposition rate. When the film is formed, a desired film thickness may not be obtained.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a film forming apparatus capable of stably manufacturing a thin film having a desired film thickness, and to provide such a thin film having a predetermined film thickness. An object of the present invention is to provide a display device manufacturing apparatus and a display device manufacturing method capable of manufacturing a display element having the display device.

The film forming apparatus according to the first aspect of the present invention comprises:
A deposition source;
A control plate for controlling a scattering range of the material source from the vapor deposition source and a film forming member, and a conveying means for conveying the film forming member at a predetermined speed in a direction intersecting the direction in which the material source is scattered from the vapor deposition source;
A measuring mechanism arranged at a position facing the vapor deposition source and measuring a vapor deposition rate;
A timer unit for measuring the elapsed time since the start of scattering of the material source from the vapor deposition source,
Based on the measurement result of the deposition rate and the elapsed time, a speed setting mechanism that controls the transport speed of the film-forming member;
It is provided with.

The display device manufacturing apparatus according to the second aspect of the present invention comprises:
A manufacturing apparatus for manufacturing a display device including display elements arranged in a matrix on the main surface side of a substrate,
An evaporation source including a material source for forming a thin film constituting the display element;
A measuring mechanism that faces the vapor deposition source at a standby position and measures the vapor deposition rate;
A scanning mechanism that scans the substrate main surface in a state opposite to the vapor deposition source at a processing position different from the standby position;
Based on the vapor deposition rate measured by the measurement mechanism, the scanning mechanism compensates for a change in film thickness on the main surface of the substrate with the passage of time from the start of scattering of the material source from the vapor deposition source. A speed setting mechanism for setting the scanning speed of
It is provided with.

A method of manufacturing a display device according to the third aspect of the present invention is as follows.
A manufacturing method for manufacturing a display device including display elements arranged in a matrix on the main surface side of a substrate,
In a standby position, facing a vapor deposition source provided with a material source for forming a thin film constituting the display element, and measuring a vapor deposition rate;
Scanning the substrate main surface in a state opposite to the vapor deposition source at a processing position different from the standby position, and forming a thin film having a predetermined film thickness on the substrate main surface,
Before starting scanning in the thin film forming process, based on the deposition rate measured in the measuring process, film formation on the main surface of the substrate with the passage of time from the start of scattering of the material source from the deposition source The scanning speed is set so as to compensate for a change in thickness.

  According to the present invention, a thin film having a desired film thickness can be stably obtained when forming a thin film, and a display device manufacturing apparatus capable of manufacturing a display element having a thin film having a predetermined film thickness. In addition, a method for manufacturing a display device can be provided.

  A film forming apparatus, a display apparatus manufacturing apparatus, and a manufacturing method thereof according to an embodiment of the present invention will be described below with reference to the drawings. In this embodiment, a self-luminous display device such as an organic EL (electroluminescence) display device will be described as an example of the display device.

  As shown in FIGS. 1 and 2, the organic EL display device 1 includes an array substrate 100 having a display area 102 for displaying an image. The display area 102 of the array substrate 100 is composed of a plurality of pixels PX (R, G, B) arranged in a matrix.

  Further, the array substrate 100 has a plurality of scanning lines Ym (m = 1, 2,...) Arranged along the row direction of the pixels PX (that is, the Y direction in FIG. 1) and a direction substantially orthogonal to the scanning lines Ym. In other words, a plurality of signal lines Xn (n = 1, 2,...) Arranged along (the X direction in FIG. 1) and a power supply line for supplying power to the first electrode 60 side of the organic EL element 40. P.

  Furthermore, the array substrate 100 has a scanning line driving circuit 107 that supplies a scanning signal to each of the scanning lines Ym and a signal that supplies a video signal to each of the signal lines Xn in the peripheral area 104 along the outer periphery of the display area 102. A line driving circuit 108. All the scanning lines Ym are connected to the scanning line driving circuit 107. All signal lines Xn are connected to the signal line driving circuit 108.

  Each pixel PX (R, G, B) is supplied via a pixel switch 10 and a pixel switch 10 having a function of electrically separating an on-pixel and an off-pixel and holding a video signal to the on-pixel. The driving transistor 20 supplies a desired driving current to the display element based on the video signal, and the storage capacitor element 30 holds the gate-source potential of the driving transistor 20 for a predetermined period. The pixel switch 10 and the drive transistor 20 are constituted by, for example, thin film transistors, and here, polysilicon is used for their semiconductor layers.

  Each pixel PX (R, G, B) includes an organic EL element 40 (R, G, B) as a display element. That is, the red pixel PXR includes an organic EL element 40R that mainly emits light corresponding to the red wavelength. The green pixel PXG includes an organic EL element 40G that mainly emits light corresponding to the green wavelength. The blue pixel PXB includes an organic EL element 40B that mainly emits light corresponding to the blue wavelength.

  The configurations of the various organic EL elements 40 (R, G, B) are basically the same. That is, as shown in FIG. 2, the array substrate 100 includes a plurality of organic EL elements 40 arranged on the main surface side of the wiring substrate 120. Note that the wiring substrate 120 is formed on an insulating support substrate such as a glass substrate or a plastic sheet, the pixel switch 10, the driving transistor 20, the storage capacitor element 30, the scanning line driving circuit 107, the signal line driving circuit 108, and various wirings (scanning). Line, signal line, power supply line, etc.).

  The organic EL element 40 includes a first electrode 60 that is arranged in a matrix and is formed in an independent island shape for each pixel PX, and a second electrode that is opposed to the first electrode 60 and is formed in common for all the pixels PX. 66, and a photoactive layer (here, organic active layer) 64 held between the first electrode 60 and the second electrode 66.

  The first electrode 60 constituting the organic EL element 40 is disposed on the insulating film on the surface of the wiring substrate 120 and functions as an anode.

  The organic active layer 62 includes a light emitting layer. The organic active layer 62 may include layers other than the light emitting layer, and may be configured by, for example, a two-layer structure of a hole transport layer formed in common for each color and a light emitting layer formed in each color pixel. In addition, a hole injection layer, a blocking layer, an electron transport layer, an electron injection layer, a buffer layer, and the like may be included, or a layer in which these are functionally combined may be included. In the organic active layer 62, the light emitting layer may be an organic material, and layers other than the light emitting layer may be an inorganic material or an organic material. The light-emitting layer is formed of an organic compound having a light-emitting function that emits red, green, or blue light.

  The second electrode 66 is disposed on the organic active layer 64 in common with each organic EL element 40. The second electrode 66 is formed of a metal material having an electron injection function and functions as a cathode.

  In addition, the array substrate 100 includes a partition wall 70 that separates the pixels PX (R, G, B) for each adjacent color in the display area 102. The partition wall 70 is preferably formed so as to separate each pixel. Here, the partition wall 70 is arranged in a lattice shape along the periphery of each first electrode 60, and the opening shape of the partition wall exposing the first electrode 60 is used. Is formed in a rectangular shape. The partition wall 70 is made of a resin material.

  The array substrate 100 having such a configuration is hermetically sealed with a sealing body 200 on the main surface side including the organic EL elements 40.

  Next, a method for manufacturing the display device having the above-described configuration will be described.

  First, as shown in FIG. 3A, in the display area 102 on the wiring substrate 120, an independent island-shaped first electrode 60 is formed for each pixel. That is, the first electrode 60 is formed by patterning a metal film functioning as an anode on one main surface side of the wiring board 120. The first electrode 60 may be generally formed by a photolithography process, or through a mask body having a pattern corresponding to a pixel (that is, an opening pattern corresponding to the shape of the first electrode of each pixel). You may form by the mask vapor deposition method which vapor-deposits a metal material source.

  Subsequently, as shown in FIG. 3B, a partition wall 70 for separating each pixel is formed. That is, a photosensitive resin material such as an acrylic type positive tone resist is formed on the entire main surface of the wiring substrate 120 including the first electrode 60, and then patterned by a photolithography process, and then at 220 ° C. for 60 minutes. Is fired. Thereby, a grid-like partition wall 70 surrounding each pixel is formed.

  Subsequently, as shown in FIG. 3C, an organic active layer 64 is formed on the first electrode 60 in each pixel. That is, a mask having a pattern AP corresponding to a pixel (that is, an opening pattern corresponding to the organic active layer of each pixel) AP is selected as the organic active layer 64 including a hole buffer layer and the like in addition to the light emitting layer. It can be formed by a mask vapor deposition method in which an organic material source is vapor-deposited through the main body M.

  Subsequently, as shown in FIG. 3D, a second electrode 66 common to a plurality of pixels is formed on the organic active layer 64. That is, the second electrode 66 can be formed by a vapor deposition method in which a metal material source that functions as a cathode is vapor-deposited on one main surface side of the wiring substrate 120 on which the organic active layer 64 is disposed.

  By such a process, the organic EL element 40 is formed.

  Next, the manufacturing apparatus for forming each thin film which comprises the organic EL element 40 as mentioned above is demonstrated.

  As illustrated in FIG. 4, the manufacturing apparatus 400 includes a vapor deposition source 410, a measurement mechanism 420, a scanning mechanism 430, and a speed setting mechanism 440. In addition, the manufacturing apparatus 400 is configured to be capable of disposing a processing target substrate SUB, that is, a substrate (film forming member) on which a thin film is formed on the main surface thereof.

  The vapor deposition source 410 includes a material source for forming a thin film constituting the organic EL element 40. The material source is, for example, an inorganic or organic material for forming the first electrode 60, the organic active layer 64, the second electrode 66, and the like. The vapor deposition source 410 includes a heating mechanism that heats the material source provided in the crucible, and is configured to be able to scatter the material source.

  The measuring mechanism 420 is disposed opposite to the vapor deposition source 410 at the standby position 501 inside the apparatus, and measures the vapor deposition rate. That is, the measurement mechanism 420 includes a film thickness meter. Then, the measuring mechanism 420 forms a film per unit time based on a signal corresponding to the film thickness output from the film thickness meter after a predetermined time has passed while facing the vapor deposition source 410 in a state where the material source is scattered. The film thickness of the thin film, that is, the deposition rate is measured.

  The scanning mechanism 430 scans the main surface of the substrate SUB to be processed facing the vapor deposition source 410 at a processing position 502 different from the standby position 501 inside the apparatus. That is, the scanning mechanism 430 includes a mechanism that moves at least one of the processing target substrate SUB and the vapor deposition source 410 so that the vapor deposition source 410 scans the entire main surface of the processing target substrate SUB. In the example illustrated in FIG. 4, the scanning mechanism 430 is configured to scan the deposition source 410 over the entire main surface of the processing target substrate SUB with respect to the processing target substrate SUB fixedly disposed at the processing position 502. Yes. At this time, in FIG. 4, the scanning mechanism 430 transports the processing target substrate SUB at a predetermined speed in a direction intersecting with the direction in which the material source scatters from the vapor deposition source 410.

  The speed setting mechanism 440 is based on the vapor deposition rate measured by the measurement mechanism 420, and the film thickness on the main surface of the processing substrate SUB with the passage of time from the start of the scattering of the material source from the vapor deposition source 410. The scanning speed of the scanning mechanism 430 is set so as to compensate for this change.

  That is, as shown in FIG. 4, the manufacturing apparatus 400 includes a control plate 450 disposed between the vapor deposition source 410 and the processing target substrate SUB. This control plate 450 regulates the scattering range 451 of the material source that scatters from the vapor deposition source 410. In the example shown in FIG. 4, the control plate 450 is moved together with the vapor deposition source 410 by the scanning mechanism 430. As shown in FIG. 5, a part of the material source scattered from the vapor deposition source 410 (for example, a material source trying to scatter outside the scatter range 451) S easily adheres to the control plate 450. When no material source S adheres to the control plate 450, a predetermined scattering range 451A is defined. On the other hand, when the amount of the material source S adhering to the control plate 450 increases with the lapse of processing time, that is, the time from the start of scattering of the material source from the vapor deposition source 410, it becomes narrower than the initial scattering range 451A. The specified scattering range 451B is defined.

  That is, as shown by the dotted line in FIG. 6, as the processing time (h) elapses, the adhesion amount (mm) of a part of the material source S to the control plate 450 gradually increases. For this reason, the scattering range of the material source is reduced, and the deposition rate is substantially reduced. Thereby, when a thin film is formed at a constant scanning speed, as shown by the solid line in FIG. 6, the film thickness of the thin film formed on the main surface of the processing target substrate SUB as the processing time (h) elapses. (Angstrom) gradually decreases. In the example shown in FIG. 6, the amount of the material source attached to the control plate 450 and the film thickness of the thin film are given by a linear function of the processing time.

  On the other hand, as shown in FIG. 7, between the deposition rate (angstrom / s) and the scanning speed (mm / s) for forming a thin film having a predetermined film thickness on the main surface of the substrate SUB to be processed. There is a correlation. In the example shown in FIG. 7, the scanning speed is given as a linear function of the vapor deposition rate in the initial state where no material source S is attached to the control plate 450. For this reason, in the initial state, the speed setting mechanism 440 sets a scanning speed by the scanning mechanism 430 based on the vapor deposition rate measured by the measuring unit 420, thereby forming a thin film having a predetermined film thickness on the main surface of the processing target substrate SUB. Can be formed.

  However, even if the vapor deposition rate measured by the measurement mechanism 420 does not change as the processing time elapses (that is, the scanning speed does not change), as shown in FIG. Since the film thickness on the main surface of the substrate SUB gradually decreases, a thin film having a desired film thickness cannot be obtained.

  Therefore, the speed setting mechanism 440 sets the scanning speed set so as to form a thin film having a predetermined film thickness on the processing target substrate SUB based on the vapor deposition rate measured by the measuring mechanism 420 at the processing time and the elapsed processing time. Correction is made based on the reduction rate of the film thickness per unit time. Accordingly, it is possible to stably form a thin film having a desired film thickness by vapor deposition regardless of the size of the scattering range 451 of the material source.

  Note that the elapsed time that has elapsed since the start of the material loss scattering from the vapor deposition source 410, that is, the processing time can be measured by the timer unit 441, but the speed setting mechanism 440 may have a function of measuring the processing time. good.

  In addition, when the scanning speed of the scanning mechanism 430 is constant, the reduction rate of the film thickness on the main surface of the processing target substrate SUB per unit time that has elapsed since the scattering of the material source from the vapor deposition source 410 is started ( For example, the scanning mechanism 430 for forming a thin film having a predetermined film thickness on the main surface of the processing target substrate SUB with respect to the deposition rate measured by the measuring mechanism 420) and the inclination of the function indicated by the solid line in FIG. The table in which the scanning speed is set (for example, the relationship shown in FIG. 7) can be stored in the storage unit 442. However, the speed setting mechanism 440 has a function of storing these reduction ratios and the table. Also good.

  Next, the manufacturing method of the thin film in the manufacturing apparatus 400 is demonstrated more concretely.

  As shown in FIG. 8, first, the deposition rate is measured (ST1). That is, in the vapor deposition source 410, the material source in the crucible is heated and scattering of the material source is started. Then, at the standby position 501 inside the manufacturing apparatus 400, the vapor deposition source 410 and the measurement mechanism 420, which are scattering the material source, are arranged facing each other. The measuring mechanism 420 measures the film thickness formed by the film thickness meter at the timing when the predetermined time is measured by the timer unit 441, and calculates the deposition rate.

  Subsequently, the speed setting mechanism 440 sets the provisional scanning speed V1 (ST2). That is, the speed setting mechanism 440 refers to the table stored in the storage unit 442, and sets the corresponding scanning speed as the temporary scanning speed V1 based on the vapor deposition rate measured by the measuring mechanism 420. Here, for example, the vapor deposition rate is 4.5 angstrom / s, and the temporary scanning speed V1 is set to 17 mm / s based on the table shown in FIG.

Subsequently, the speed setting mechanism 440 sets the actual scanning speed V2 (ST3). That is, the speed setting mechanism 440 sets the actual scanning speed V2 based on the set provisional scanning speed V1, the decrease rate G stored in the storage unit 442, and the processing time H measured by the timer unit 441. Here, it is assumed that the actual scanning speed V2 is a linear function of the processing time H,
V2 = G * H + V1
It shall be specified in At this time, for example, the provisional scanning speed V1 is 17 mm / s and the decrease rate G is −0.31, so
V2 = −0.31 * H + 17
(See FIG. 9). That is, a desired film thickness can be obtained by setting the scanning speed to be slower by 0.31% per processing time. As a result, the speed setting mechanism 440 calculates the actual scanning speed V2 corresponding to the processing time H.

  Subsequently, a thin film having a predetermined film thickness is formed on the main surface of the processing target substrate SUB (ST4). That is, the scanning mechanism 430 moves the vapor deposition source 410 and the control plate 450 at the actual scanning speed V2 set by the speed setting mechanism 440, and scans the main surface of the processing target substrate SUB arranged at the processing position 502. As a result, a thin film having a predetermined film thickness is formed on the main surface of the processing target substrate SUB.

  As described above, according to this embodiment, it is possible to manufacture a thin film having a desired film thickness stably regardless of the processing time. Therefore, according to the display element made of such a thin film, it is possible to stably achieve good display performance.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the components without departing from the gist of the invention in the stage of implementation. Further, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, you may combine suitably the component covering different embodiment.

FIG. 1 is a diagram schematically showing a configuration of an organic EL display device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view schematically showing the structure of one pixel of the organic EL display device shown in FIG. FIG. 3A is a diagram for explaining a manufacturing process for forming the organic EL display device, and shows a process of forming the first electrode. FIG. 3B is a diagram for explaining a manufacturing process for forming the organic EL display device, and shows a process of forming a partition. FIG. 3C is a diagram for explaining a manufacturing process for forming the organic EL display device, and shows a process for forming the organic active layer. FIG. 3D is a diagram for explaining a manufacturing process for forming the organic EL display device, and is a diagram illustrating a process of forming the second electrode. FIG. 4 is a diagram schematically illustrating a configuration example of a manufacturing apparatus for manufacturing a thin film. FIG. 5 is a diagram for explaining the change of the scattering range accompanying the adhesion of the material source to the control plate. FIG. 6 is a diagram illustrating an example of the relationship between the amount of material source attached to the control plate with respect to the processing time and the relationship between the processing time and the film thickness of the thin film. FIG. 7 is a diagram showing an example of the relationship between the scanning rate and the vapor deposition rate for forming a thin film having a predetermined film thickness. FIG. 8 is a flowchart for explaining a method of manufacturing a thin film by the manufacturing apparatus shown in FIG. FIG. 9 is a diagram illustrating an example of a function for calculating the actual scanning speed from the temporary scanning speed with the passage of processing time.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Organic EL display apparatus, 10 ... Pixel switch, 20 ... Drive transistor, 30 ... Storage capacitor element, 40 ... Organic EL element, 60 ... 1st electrode, 64 ... Organic active layer, 66 ... 2nd electrode, 70 ... Partition DESCRIPTION OF SYMBOLS 100 ... Array board | substrate 120 ... Wiring board, PX ... Pixel, 400 ... Manufacturing apparatus, 410 ... Deposition source, 420 ... Measuring mechanism, 430 ... Scanning mechanism, 440 ... Speed setting mechanism, 441 ... Timer part, 442 ... Memory | storage part , 450 ... Control board, SUB ... Process target substrate

Claims (10)

A deposition source;
A control plate for controlling a scattering range of the material source from the vapor deposition source and a film forming member, and a conveying means for conveying the film forming member at a predetermined speed in a direction intersecting the direction in which the material source is scattered from the vapor deposition source;
A measuring mechanism arranged at a position facing the vapor deposition source and measuring a vapor deposition rate;
A timer unit for measuring the elapsed time since the start of scattering of the material source from the vapor deposition source,
Based on the measurement result of the deposition rate and the elapsed time, a speed setting mechanism that controls the transport speed of the film-forming member;
A film forming apparatus comprising: A manufacturing apparatus for manufacturing a display device including display elements arranged in a matrix on the main surface side of a substrate,
An evaporation source including a material source for forming a thin film constituting the display element;
A measuring mechanism that faces the vapor deposition source at a standby position and measures the vapor deposition rate;
A scanning mechanism that scans the substrate main surface in a state opposite to the vapor deposition source at a processing position different from the standby position;
Based on the vapor deposition rate measured by the measurement mechanism, the scanning mechanism compensates for a change in film thickness on the main surface of the substrate with the passage of time from the start of scattering of the material source from the vapor deposition source. A speed setting mechanism for setting the scanning speed of
An apparatus for manufacturing a display device, comprising: A manufacturing apparatus for manufacturing a display device including display elements arranged in a matrix on the main surface side of a substrate,
An evaporation source including a material source for forming a thin film constituting the display element;
A measuring mechanism that faces the vapor deposition source at a standby position and measures the vapor deposition rate;
A scanning mechanism that scans the substrate main surface in a state opposite to the vapor deposition source at a processing position different from the standby position;
After the scanning speed of the scanning mechanism is set so as to form a thin film having a predetermined film thickness on the main surface of the substrate based on the vapor deposition rate measured by the measuring mechanism, the material source starts to scatter from the vapor deposition source. A speed setting mechanism for correcting the set scanning speed based on the elapsed time and the decreasing rate of the film thickness per unit time that has elapsed;
An apparatus for manufacturing a display device, comprising: A manufacturing apparatus for manufacturing a display device including display elements arranged in a matrix on the main surface side of a substrate,
An evaporation source including a material source for forming a thin film constituting the display element;
A measuring mechanism that faces the vapor deposition source at a standby position and measures the vapor deposition rate;
A scanning mechanism that scans the substrate main surface in a state opposite to the vapor deposition source at a processing position different from the standby position;
When the scanning speed of the scanning mechanism is constant, the rate of decrease in film thickness on the substrate main surface per unit time that has elapsed since the start of scattering of the material source from the vapor deposition source, and the measurement mechanism A storage unit storing a table in which the scanning speed of the scanning mechanism for forming a thin film having a predetermined film thickness on the main surface of the substrate with respect to the measured deposition rate is set;
A timer unit for measuring the elapsed time since the start of scattering of the material source from the vapor deposition source,
A speed setting mechanism for setting a scanning speed of the scanning mechanism based on an evaporation rate measured by the measuring mechanism, a decreasing rate and a table stored in the storage unit, and an elapsed time measured by the timer unit;
An apparatus for manufacturing a display device, comprising:   The display according to any one of claims 2 to 4, wherein the scanning mechanism includes a mechanism for moving at least one of the substrate and the vapor deposition source so that the vapor deposition source scans the entire main surface of the substrate. Equipment manufacturing equipment.   The display device manufacturing apparatus according to claim 2, further comprising a control plate that regulates a scattering range of a material source scattered from the vapor deposition source.   The vapor deposition source includes a material source for forming a thin film of any one of a first electrode, a photoactive layer, and a second electrode common to a plurality of display elements, which are arranged in an independent island shape on each display element. The display apparatus manufacturing apparatus according to claim 2, wherein the display apparatus manufacturing apparatus is a display apparatus. A manufacturing method for manufacturing a display device including display elements arranged in a matrix on the main surface side of a substrate,
In a standby position, facing a vapor deposition source provided with a material source for forming a thin film constituting the display element, and measuring a vapor deposition rate;
Scanning the substrate main surface in a state opposite to the vapor deposition source at a processing position different from the standby position, and forming a thin film having a predetermined film thickness on the substrate main surface,
Before starting scanning in the thin film forming process, based on the deposition rate measured in the measuring process, film formation on the main surface of the substrate with the passage of time from the start of scattering of the material source from the deposition source A method for manufacturing a display device, characterized in that a scanning speed is set so as to compensate for a change in thickness. A manufacturing method for manufacturing a display device including display elements arranged in a matrix on the main surface side of a substrate,
In a standby position, facing a vapor deposition source provided with a material source for forming a thin film constituting the display element, and measuring a vapor deposition rate;
Scanning the substrate main surface in a state opposite to the vapor deposition source at a processing position different from the standby position, and forming a thin film having a predetermined film thickness on the substrate main surface,
Before starting the scanning in the thin film forming step, after setting the scanning speed so as to form a thin film having a predetermined film thickness on the main surface of the substrate based on the vapor deposition rate measured in the measuring step, the material from the vapor deposition source A method for manufacturing a display device, comprising: correcting a set scanning speed based on a time elapsed since the start of scattering of a source and a decreasing rate of a film thickness per unit time that has elapsed. A manufacturing method for manufacturing a display device including display elements arranged in a matrix on the main surface side of a substrate,
In a standby position, facing a vapor deposition source provided with a material source for forming a thin film constituting the display element, and measuring a vapor deposition rate;
Scanning the substrate main surface in a state opposite to the vapor deposition source at a processing position different from the standby position, and forming a thin film having a predetermined film thickness on the substrate main surface,
Before starting the scanning in the thin film forming process, the deposition rate measured in the measuring process and the substrate main unit per unit time that has elapsed since the material source started to scatter from the deposition source when the scanning speed is constant. A reduction rate of the film thickness on the surface, a table in which a scanning speed for forming a thin film with a predetermined film thickness on the main surface of the substrate is set with respect to the measured deposition rate, and A method for manufacturing a display device, comprising: setting a scanning speed in the scanning step based on an elapsed time since the start of scattering.

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