TW201627514A - Vacuum deposition apparatus - Google Patents

Abstract

The present invention provides an excellent vacuum deposition apparatus comprising a crystal oscillating type film thickness meter, wherein a crystal oscillator preformed with a certain thickness of organic material, which is vaporized from other vaporization sources among the remaining vaporization sources, is used as a crystal oscillating type film thickness meter in one of the vaporization sources, so as to form in advance a plurality of crystal oscillators having the organic material base film of a certain film thickness, without employing the formation process of a base film while suppressing the rise of equivalent series resistance in the crystal oscillator. In a vacuum vapor deposition apparatus, a plurality of crystal oscillators (4) of the crystal oscillating type film thickness meter is used to control the film thickness and deposition rate of one of the vaporization sources, and a vapor deposition procedure is applied to other vaporization sources among the remaining vaporization sources for controlling the film thickness and deposition rate, while at the same time forming, on the plural crystal oscillators, a crystal oscillator having the organic material base film made from the organic material.

Description

Vacuum evaporation device

The present invention relates to a vacuum vapor deposition apparatus in which a film is formed on a substrate in a vacuum chamber in which decompressed air is held, and a crystal oscillation type film thickness for controlling film thickness or vapor deposition rate (film thickness ratio) is provided. Vacuum evaporation device.

A film thickness gauge is used to control the film thickness and the vapor deposition rate (film thickness ratio) by vacuum vapor deposition to form a film on a vacuum deposition apparatus for a substrate. Although there are various types of the film thickness gauge depending on the measurement method, the crystal oscillator method is widely used.

A crystal oscillation type film thickness meter using a crystal oscillator method is used when a resonance of a vapor crystal on a surface of a crystal oscillator changes due to a change in mass thereof, for example, a change in resonance (oscillation frequency) is measured. Therefore, the film thickness, the film thickness ratio, and the like are measured, and this is fed back to the heating control device of the evaporation source, and the film thickness ratio of the vapor-deposited film for the substrate is controlled to be constant, and the film thickness is managed.

In addition, the film thickness measurement (film) of such a crystal oscillation type film thickness meter In the case of thick monitoring, if a thick film is deposited on the electrode film of the crystal oscillator, the following phenomenon occurs: the resonance becomes unstable, or the equivalent series resistance (crystal impedance) of the crystal oscillator rises and flows through the crystal. The current of the oscillator is reduced, making it impossible to measure the resonance. For this reason, when the vapor deposition is so thick that resonance cannot be measured, it is judged that the life of the crystal oscillator is reached, and the crystal oscillator is exchanged for a new crystal oscillator.

Specifically, for example, in order to continuously exchange the crystal oscillator in a vacuum chamber, a plurality of crystal oscillators are rotated to hold the crystal holder, and switching is performed.

In the past, in order to achieve a film having a thick vapor deposition, cracking, peeling, and the like of the film are not likely to occur, and the crystal is oscillated in the case of the film of the present invention. A soft metal film is formed in advance on the electrode film on the film formation surface of the device, thereby relaxing the internal stress of the film and preventing peeling, cracking, and the like of the film.

Further, according to Patent Document 2 (Japanese Laid-Open Patent Publication No. 2014-70238), at least two or more evaporation sources and a film thickness sensor corresponding thereto are provided in a vacuum chamber, and are evaporated from one evaporation source. A material that is not easily attached to the surface of the crystal oscillator, and a film thickness sensor that is monitored for this purpose, is preliminarily introduced with a material evaporated from the other evaporation source, so that the material having good adhesion is in the crystal before vapor deposition of the material that is not easily adhered The base film is formed on the surface of the oscillator, and the correct evaporation rate can be detected even for materials that are not easily attached.

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Publication No. 2000-101387

[Patent Document 2] Japanese Patent Publication No. 2014-70238

However, the method of forming a metal film in advance on a crystal oscillator known from Patent Document 1 is a method for preventing peeling of a film forming material, eliminating resonance instability, and prolonging the life of the crystal oscillator. Even if the film on the crystal oscillator is not peeled off, the equivalent series resistance of the crystal oscillator will rise, and the current flowing through the crystal oscillator will be lowered, making it impossible to measure the resonance, so the life of the crystal oscillator cannot be prolonged.

Further, according to Patent Document 2, a film thickness sensor which is a material which is hard to adhere to one of the evaporation sources is introduced, and a method of forming a base film by introducing a material evaporated from the other evaporation source is used. The film thickness sensor disposed at an appropriate position in the evaporation source is introduced into the material of the other evaporation source by the pre-coating introduction tube, so that a sufficient vapor deposition rate cannot be secured, and the film is formed in advance. The base film of a thick sensor (crystal oscillator surface) tends to be uneven. Further, since the introduction of the material which is easily adhered to the other evaporation source is not monitored by the film thickness, the base film having the correct film thickness cannot be formed.

In other words, even when the vapor deposition material is prevented from being peeled off or cracked, and an organic material having a small specific gravity is vapor-deposited on the vapor deposition material, the organic material is continuously formed on the electrode so that the film thickness of the vapor deposition film is less likely to follow. The thickness of the crystal oscillator is shear vibration, so even if the vibration is maintained The thicker the film thickness of the vapor-deposited film is, the higher the equivalent series resistance is. Therefore, the problem that the oscillation frequency cannot be measured cannot be sufficiently solved. In particular, when the base film is under the metal film, the equivalent series resistance rise due to the interface with the organic material cannot be suppressed, and the life of the crystal oscillation type film thickness meter is still short and cannot be extended.

Further, in particular, a vapor deposition material for producing an organic EL device is an organic material having a small specific gravity, and has poor adhesion to an electrode film (for example, Au, Ag, etc.) on the surface of the crystal oscillator, and cannot follow the thickness shear of the crystal oscillator. In the vibration, even if the metal base film is provided, the organic material is placed on the electrode film. Therefore, when the film thickness of the vapor deposition film increases, the equivalent series resistance increases, and the life of the crystal oscillator is short.

Further, in the method of introducing an organic material having an unsupervised film thickness into the surface of the crystal oscillator through the introduction tube, it is impossible to form a plurality of crystal oscillators having a base film uniformly formed with a sufficient thickness. Cope with the use of mass production equipment.

The present invention has been made in view of the above problems, and aims to provide a vacuum vapor deposition apparatus which is controlled by a film thickness gauge, a vapor deposition rate, and the like by a crystal oscillation type film thickness meter. On the surface of a plurality of crystal oscillators of the crystal oscillation type film thickness meter, an organic material which is evaporated from the evaporation source of the other (the rest) is vapor-deposited, and an organic material base film having a predetermined film thickness is formed in advance, and the plurality of organic material base films are used. This uniformly forms a crystal oscillator type film thickness meter of a crystal oscillator of a base film having a predetermined film thickness of a sufficient film thickness, and controls the film thickness and evaporation rate of the organic material evaporated from the evaporation source. Equilateral evaporation, thereby suppressing the equivalent of equivalent series resistance When the series resistance is increased to achieve a long life, the organic material base film can be formed into a uniform film thickness as described above, and the film forming process different from the vapor deposition process is not required to form the organic material in advance. Basement membrane.

The gist of the present invention will be described with reference to the accompanying drawings.

In a vacuum vapor deposition apparatus, an organic material of a vapor deposition material that evaporates from at least two or more evaporation sources 2 is deposited on a surface of a substrate 3 in a vacuum chamber 1 to form a thin film, and is configured in the vacuum chamber 1 A crystal oscillation type film thickness meter M for controlling a film thickness or a vapor deposition rate for controlling the surface of the substrate 3 by controlling at least two or more evaporation sources 2, wherein the crystal oscillation film thickness meter M has a plurality of crystal oscillations In the above-mentioned one of the above-mentioned ones of the evaporation sources 2, one of the crystal oscillation type film thickness meters M is exchanged when an organic material having a certain film thickness is formed and evaporated from the other evaporation source 2 in the rest is formed. The next crystal oscillator 4 is vapor-deposited on the plurality of crystal oscillators 4 provided in the crystal oscillation type film thickness meter M, and in the evaporation process of the other evaporation source 2 in the rest. Film thickness monitoring simultaneously forms a plurality of crystal oscillators 4 with an organic material base film 6 of a certain thickness of the organic material base film 6, and vapor deposition of other evaporation sources 2 using the rest. After the end of the program, the film thickness monitor M having the crystal oscillator 4 with the organic material base film 6 is used to perform film thickness monitoring in the vapor deposition process using one of the evaporation sources 2.

In the vacuum vapor deposition apparatus of the first aspect of the invention, the vacuum chamber 1 is configured by a plurality of organic vapor deposition chambers 12, and each of the organic vapor deposition chambers 12 is disposed. The evaporation source 2 and the crystal oscillation type film thickness meter M are disposed in the plurality of crystal oscillators 4 of the crystal oscillation type film thickness meter M of the organic vapor deposition chamber 12, and a predetermined film thickness is formed in advance. When the organic material of the evaporation source 2 of the other organic vapor deposition chambers 12 is evaporated into the next crystal oscillator 4, the organic material base film 6 is formed on the plurality of crystal oscillators 4, respectively. The crystal oscillation type film thickness meter M of the crystal oscillator 4 including the organic material base film 6 is subjected to film thickness monitoring in the vapor deposition process using the evaporation source 2 of one of the organic vapor deposition chambers 12.

In the vacuum vapor deposition apparatus of the first aspect of the invention, the organic material base film 6 formed on each of the crystal oscillators 4 has a film thickness of at least 2 μm or more.

Further, in the vacuum vapor deposition device according to the second aspect of the invention, the organic material base film 6 formed on each of the crystal oscillators 4 has a film thickness of at least 2 μm or more.

The vacuum vapor deposition device according to any one of the first to fourth aspects of the invention, wherein the electrode film 5 formed on the front surface and the back surface of the crystal oscillator 4 is made of Al or Al. Formed by a plurality of metals.

Further, the vacuum vapor deposition device according to any one of the first to fourth aspects of the invention is characterized in that the crystal oscillating film thickness meter is provided The moving mechanism 13 of M forms the organic material base film by vapor deposition on the crystal oscillator 4 while controlling the film thickness or the vapor deposition rate from the organic material evaporated by the other evaporation source 2 among the others. 6. After the evaporation process of the other evaporation source 2 in the rest is completed, the crystal oscillation type film thickness meter M is moved by the moving mechanism 13, and the organic material evaporated from the one evaporation source 2 is formed on the organic material. Attaching the foregoing organic material base film 6 to the crystal oscillator 4, thereby controlling one of the evaporation sources 2 to control the film thickness or vapor deposition rate of the surface of the substrate 3 and performing a film in the evaporation process using one of the evaporation sources 2 Thick monitoring.

Further, the vacuum vapor deposition device according to the fifth aspect of the invention is configured to include a moving mechanism 13 that moves the crystal oscillation type film thickness meter M, and organically evaporated from the other evaporation source 2 among the others. The material is subjected to vapor deposition on each of the crystal oscillators 4 to form the organic material base film 6 while controlling the film thickness or the vapor deposition rate, and after the evaporation process of the other evaporation source 2 is completed, The moving mechanism 13 moves the crystal oscillation type film thickness meter M, and the organic material evaporated from the one of the evaporation sources 2 is formed on the crystal oscillator 4 attached to the organic material base film 6, thereby controlling one of the evaporation sources 2 On the other hand, the film thickness or the vapor deposition rate of the surface of the substrate 3 is controlled, and the film thickness monitoring in the vapor deposition process using one of the evaporation sources 2 is performed.

The vacuum vapor deposition device according to any one of the first to fourth aspects of the present invention, wherein the organic material is used for producing an organic material for an organic EL device.

In addition, regarding the vacuum evaporation apparatus according to item 5 of the patent application scope, Among them, the above organic material is used for producing an organic material for an organic EL device.

Further, the vacuum vapor deposition device of claim 6, wherein the organic material is used for producing an organic material for an organic EL device.

Further, the vacuum vapor deposition device of claim 7, wherein the organic material is used for producing an organic material for an organic EL device.

Since the present invention is configured as described above, it is an epoch-making vacuum vapor deposition apparatus that monitors the film thickness and the vapor deposition rate by a crystal oscillation type film thickness meter, and monitors the crystal oscillation film by the film thickness. The surface of the plurality of crystal oscillators of the thick gauge is vapor-deposited to the organic material which is evaporated from the evaporation source (the rest of the rest) to form a base film of the organic material having a predetermined film thickness, and is formed by using a plurality of such uniforms. a crystal oscillation type film thickness meter of a crystal oscillator of a base film having a predetermined film thickness, and vapor deposition of the organic material which is evaporated from the evaporation source while controlling the film thickness, the vapor deposition rate, and the like The increase in the equivalent series resistance of the equivalent series resistance is suppressed to achieve a long life, and the organic material base film can be formed into a uniform film thickness as described above, and a film formation different from the vapor deposition process is not required. The aforementioned organic material base film is preliminarily formed by a procedure.

In other words, it is an excellent vacuum vapor deposition apparatus including a crystal oscillation type film thickness meter which is the same as the thickness of the substrate by the crystal oscillation type film thickness meter. The film thickness is managed (while monitoring the film thickness), and the organic material evaporated from the evaporation source (other of the rest) is preliminarily vapor-deposited to form a plurality of crystal oscillators of the crystal oscillation type film thickness meter. Since the surface is formed, it is not necessary to provide a base film forming process (a new vapor deposition process for forming a base film) which is different from the vapor deposition process, and it is possible to form a uniform film thickness (a certain film thickness) which is always uniform. The organic material base film of the organic material suppresses an increase in the equivalent series resistance of the crystal oscillator, thereby achieving a long life.

That is, on the electrode film of the crystal oscillator, the film thickness and the vapor deposition rate of the other evaporation processes are controlled in advance so that the organic material is managed to have a certain film thickness and is vapor-deposited together with the substrate. Since the organic material base film is formed to have a certain film thickness, the adhesion between the electrode film and the organic material base film is better than when the vapor deposition material (organic material) is directly vapor-deposited on the electrode film, and the organic material is further The adhesion between the base film and the vapor deposition material (organic material) is also good, and the compatibility with the vapor deposition material is also better than that of the metal film as the base film, so that the film interface is unclear compared to the metal film. Even if the film thickness of the vapor deposition film of the vapor deposition material increases, the increase in the equivalent series resistance of the crystal oscillator is suppressed, so that the life can be prolonged, and long-term monitoring becomes possible, and the organic material base film formation process does not need to be Since the necessary vapor deposition procedures are separately provided, it is a vacuum vapor deposition apparatus which is excellent in productivity.

Further, when the organic material base film is formed on the electrode film of the crystal oscillator in advance, even if the adhesion between the electrode film and the vapor deposition material is poor, the vapor deposition film cannot follow the resonance of the crystal oscillator, as seen from the crystal oscillator. When it is a foreign matter attached state, it causes energy production for vibration. In the case where the vapor deposition material whose loss is caused by the increase in the equivalent series resistance of the crystal oscillator is vapor-deposited, the rise of the equivalent series resistance of the crystal oscillator during vapor deposition is suppressed, so that the life can be prolonged. It is a vacuum vapor deposition apparatus which has a crystal oscillation type film thickness meter which is possible to monitor for a long time.

Further, among the plurality of evaporation sources in the vacuum chamber, a crystal oscillator for a crystal oscillation type film thickness meter for controlling the film thickness or vapor deposition rate of the organic material evaporated from one of the evaporation sources is The different organic materials evaporated from the evaporation source in the vapor deposition process of the other evaporation sources in the rest are not accumulated until the lower limit of the resonance frequency is reached, and when a certain film thickness is formed, the switching is performed to have a plurality of The film thickness monitoring is performed by another crystal oscillator, that is, while monitoring the film thickness, the crystal oscillator of the monitor film thickness is sequentially switched, and the organic material base film of a predetermined film thickness is sequentially formed in each crystal oscillator. The crystal oscillator of the organic material base film which is vapor-deposited to a certain film thickness is formed while monitoring the film thickness, and the crystal oscillation type film thickness meter used for one of the evaporation sources is used. A crystal oscillator of a crystal oscillation type film thickness meter for an evaporation source is an excellent vacuum for suppressing an increase in equivalent series resistance and also does not require an organic material base film formation process. Plating apparatus.

In other words, as described above, the film thickness monitoring is performed at the same time, and the formation of the base film (which can be established separately) in the case of the (next) film thickness monitoring different from this is achieved, so that it is possible to more effectively achieve an organic material having a plurality of film thicknesses. The base film crystal oscillator is a vacuum vapor deposition device which is extremely practical.

In addition, in the invention aspect of claim 2, a plurality of organic vapor deposition chambers are provided, thereby being practically excellent in vacuum evaporation. Set.

Further, in the invention of claims 3 and 4, an organic material base film of at least 2 μm or more is formed, so that a vacuum vapor deposition apparatus capable of further suppressing an increase in the equivalent series resistance of the crystal oscillator can be obtained.

In addition, the invention of the fifth aspect of the patent application is a vacuum evaporation apparatus which is more excellent as follows: the adhesion to the vapor deposition material is further improved, and the evaporation film cannot be prevented from following the resonance of the crystal oscillator to make the crystal oscillator equivalent. The series resistance rises, and the current flowing through the crystal oscillator decreases, and eventually it becomes impossible to measure the resonance.

Further, in the invention aspect of the sixth and seventh aspects of the patent application, there is a moving mechanism for moving the crystal oscillation type film thickness meter so that it can be automatically moved, and is additionally provided in the same vapor deposition chamber such as a vacuum chamber so that it is not Under the evaporation of the organic material, a crystal oscillation type film thickness meter having a crystal oscillator for forming an organic material base film is used for a film thickness control monitor of another evaporation source from the same vapor deposition chamber.

Further, the invention of the eighth to eleventh aspects of the invention is a crystal oscillation type film thickness meter which is more suitable for the production of an organic EL device.

1‧‧‧vacuum tank

2‧‧‧ evaporation source

3‧‧‧Substrate

4‧‧‧ crystal oscillator

5‧‧‧Electrode film

6‧‧‧Base film of organic materials

12‧‧‧Organic evaporation chamber

13‧‧‧Mobile agencies

M‧‧‧crystal oscillator type film thickness meter

Fig. 1 is a schematic configuration diagram of a vacuum vapor deposition apparatus using a crystal oscillation type film thickness meter according to the present embodiment.

Fig. 2 is an explanatory view of a crystal holder which is a part of a crystal oscillation type film thickness meter according to the present embodiment.

Fig. 3 is an explanatory view of a cover member of a part of a crystal oscillation type film thickness meter according to the present embodiment.

[Fig. 4] A schematic configuration diagram showing an example of a leaflet type of an organic EL device manufacturing apparatus.

Fig. 5 is a schematic explanatory diagram of a crystal oscillator of the present embodiment.

Fig. 6 is a graph showing the equivalent series resistance value stabilization time ratio of the film thickness of the organic material deposited in the present embodiment with respect to the film thickness of the organic material base film.

Fig. 7 is a plan view showing a schematic configuration of a moving mechanism of a crystal oscillation type film thickness meter in the vacuum vapor deposition apparatus of the present embodiment.

Fig. 8 is a side view showing a schematic configuration of a moving mechanism of a crystal oscillation type film thickness meter in the vacuum vapor deposition device of the present embodiment.

The embodiments of the present invention which are considered to be suitable will be briefly described based on the drawings showing the effects of the present invention.

In the vacuum vapor deposition device of the present invention, at least two or more evaporation sources 2 are provided in the vacuum chamber 1, and a crystal oscillation film for controlling the film thickness and the vapor deposition rate is disposed in the evaporation source 2 In the configuration of the thickness meter M, the crystal oscillation type film thickness meter M includes a plurality of crystal oscillators 4, and at least one of the crystal oscillators M is provided with a plurality of crystal oscillators 4, which are formed in advance. When the organic material evaporated from the other evaporation sources 2 in the remaining film thickness is exchanged into the next crystal oscillator 4, the film thickness and vapor deposition rate of the other evaporation sources 2 among the rest are obtained. The organic material is vapor-deposited on a plurality of crystal oscillators 4 to form an organic material base film 6, which is used for crystals for controlling the film thickness and vapor deposition rate of one of the evaporation sources 2 described above. The oscillating film thickness meter M or the crystal oscillation type film thickness meter M provided with the crystal oscillator 4 with the organic material base film 6 is directly vapor-deposited on the electrode film of the crystal oscillator 4 compared with the vapor deposition material. In the case of 5, the adhesion between the electrode film 5 and the organic material base film 6 is good, and the adhesion between the organic material base film 6 and the vapor deposition material is also good, and the compatibility with the vapor deposition material is also higher than that of the metal. When the film is a base film, the film interface is also relatively unclear compared to the metal film. Even if the film thickness of the vapor deposition film of the vapor deposition material increases, the increase in the equivalent series resistance of the crystal oscillator 4 is suppressed and can be prolonged. Lifetime and long-term monitoring are possible without the organic material base film formation procedure other than the vapor deposition process.

For example, even when an organic material having a small specific gravity for producing an organic EL device is to be vapor-deposited, the adhesion to the electrode film 5 (for example, Au, Ag, etc.) on the surface of the crystal oscillator 4 is good, for the crystal. The followability of the thickness shear vibration of the oscillator 4 is improved, and the rise of the equivalent series resistance of the crystal oscillator 4 is suppressed, the life can be prolonged, and long-term monitoring becomes possible.

Therefore, the organic material for forming the organic material base film 6 on the electrode film 5 is selected from the same in the vacuum chamber 1 as the organic material which should suppress the rise of the equivalent series resistance of the crystal oscillator 4, for example. Among the vaporized evaporation source 2 evaporating or other organic vapor deposition chamber 12 having a plurality of organic vapor deposition chambers 12 in the vacuum evaporation apparatus, crystals are separately vapor-deposited. When the equivalent series resistance of the bulk oscillator 4 is unlikely to rise, the organic material base film 6 is formed by vapor deposition according to the vapor deposition process. For example, one of the organic materials having a plurality of organic vapor deposition chambers 12 evaporated in the vacuum evaporation apparatus is selected as an organic material composed of an organic substance containing at least one or more carbon atoms: an electrode The organic material which is more easily adhered than the equivalent series resistance of the crystal oscillator 4 is good, the followability of the thickness shear vibration of the crystal oscillator 4 becomes high, and the compatibility with the organic material is also made to make the metal film The case of the base film is also good, so that the film interface is also unclear, and even if the thickness of the vapor deposition film is increased, the rise of the equivalent series resistance can be suppressed, so that the oscillation frequency is stabilized and can be accurately measured, and the life can be prolonged.

Further, when the base film is not made of an organic material but a metal film using a metal material, even if the adhesion to the electrode film 5 is improved, a film interface with the vapor deposition material is generated, so that the equivalent series resistance is increased and the life is short.

Further, in the case where the crystal oscillator 4 of an organic material is preliminarily deposited on the electrode film 5 of the crystal oscillator 4, the moisture in the atmosphere is formed during the actual vapor deposition after the formation of the organic material base film 6. The influence of the like causes the organic material to deteriorate, and there is also a loss of function in the base film.

For example, in the vacuum evaporation apparatus, the crystal oscillator 4 used in the film thickness monitoring of the organic material evaporated from the evaporation source 2 (the rest) is regarded as the base material film 6 with the organic material. The crystal oscillator 4 is directly used for the organic material evaporated from the other (one of) evaporation sources 2, so that the deterioration of the organic material which is the base film can be suppressed to a minimum.

Further, the vacuum vapor deposition apparatus for manufacturing an organic EL device has a plurality of organic vapor deposition chambers 12, and even if an organic material which is co-evaporated in the same organic vapor deposition chamber 12 is not used as the base film, there are a plurality of Among the organic materials evaporated by the evaporation source 2, an optimum organic material is selected as the base film in view of the vapor deposition rate, the film characteristics, and the like.

Further, the film thickness of the organic material underlying film 6 is at least 2 μm or more, so that an increase in the equivalent series resistance of the crystal oscillator 4 can be further suppressed.

Further, the electrode film 5 formed on the front surface and the back surface of the crystal oscillator 4 is made of Al or a plurality of metals mainly composed of Al, so that an electrode film is formed as compared with a metal having low reactivity such as Au or Ag. In the case of 5, the adhesion to the vapor deposition material is preferably changed, and it is possible to prevent the vapor deposition film from failing to follow the resonance of the crystal oscillator 4, so that the equivalent series resistance of the crystal oscillator 4 rises, and the current flowing through the crystal oscillator 4 decreases. After all, it became impossible to measure the resonance.

Further, the crystal oscillation type film thickness meter M is configured to monitor the evaporation source 13 from the evaporation source 2 in the organic vapor deposition chamber 12, and is configured to have a moving mechanism 13 as a whole. The film thickness of the evaporated organic material forms a base film 6 of the organic material and moves, and the film thickness of the organic material evaporated from the other evaporation source 2 is monitored, so that the evaporation of the organic material can be stopped for a long time.

[Examples]

Specific embodiments of the invention are illustrated in accordance with the drawings.

In the present embodiment, the present invention is applied to a vacuum of a crystal oscillation type film thickness meter M for controlling the film thickness when an organic material evaporated from the evaporation source 2 is deposited on the surface of the substrate in the vacuum chamber 1 to form a thin film. The vapor deposition device.

In the present embodiment, at least two or more evaporation sources 2 are provided in the vacuum chamber 1, and a crystal oscillation type film thickness gauge for monitoring the film thickness in each vapor deposition process using the evaporation sources 2 is provided. M is provided in each of the evaporation sources 2, and each of the crystal oscillation type film thickness meters M includes a plurality of crystal oscillators 4.

Among them, the crystal oscillation type film thickness meter M of the evaporation source 2 in which the vapor deposition material (organic material) whose equivalent series resistance is raised is vapor-deposited (one of the crystal oscillation type film thickness meters M of one evaporation source 2) The vapor crystal material (organic material) which previously evaporates another (other of the rest) evaporation source 2 is formed as the crystal oscillator 4 of the base film with the organic material base film 6.

The crystal oscillator 4 of the present embodiment with the organic material base film 6 is produced by the crystal oscillation type film thickness meter M in the vapor deposition process using the other (other of the other) evaporation sources 2 described above. The plurality of crystal oscillators 4 form a uniform organic material base film 6 having a predetermined film thickness simultaneously with the film thickness monitoring of the vapor deposition process. In the present embodiment, the crystal oscillation type film thickness meter M is attached. The crystal oscillator 4 of the organic material base film 6 is removed from the crystal oscillation type film thickness meter M, and the one crystal oscillation type film thickness meter M of the one of the evaporation sources 2 described above is provided.

That is, in the present embodiment, each vapor deposition process (each evaporation source) Each of the two is provided with a crystal oscillation type film thickness meter M. The crystal oscillation type film thickness meter M is not moved, and the organic material base film 6 is formed while monitoring the film thickness in another vapor deposition process, and then switched ( Move the load) this crystal oscillator 4.

On the other hand, the crystal oscillation type film thickness meter M which is formed as the crystal oscillator 4 with the organic material base film 6 simultaneously with the film thickness monitoring may be configured as the crystal oscillation type film thickness meter after the vapor deposition process. Each of M moves, or the other crystal oscillation type film thickness meter M is simultaneously moved to the other side while the one crystal oscillation type film thickness meter M is retracted while the wiring is not reconnected in the embodiment described later. The crystal oscillation type film thickness meter M formed as the crystal oscillator 4 with the organic material base film 6 becomes this.

In any case, the present invention forms an organic material base film 6 having a certain film thickness simultaneously with the film thickness monitoring in the vapor deposition process of the other evaporation source 2 among the others, and thus can be effectively effective without requiring a special base film formation process. Forming a plurality of crystal oscillators 4 with a certain film thickness of the organic material base film 6, so that the crystal oscillator 4 of the organic material base film 6 with a certain film thickness formed by other evaporation processes among the others may be provided. The crystal oscillator 4 included in the crystal oscillation type film thickness meter M in the vapor deposition process of the vapor deposition material in which the vaporization equivalent series resistance is increased is used as one of the (other) vapor deposition programs. The crystal oscillation type film thickness meter M of the crystal oscillator 4 with the organic material base film 6 is a vacuum vapor deposition device which exhibits the excellent effects as described above.

Fig. 1 is a view showing the vacuum vapor deposition device which can be continuously used for a large substrate for a long time under the crystal oscillation type film thickness meter M of the present embodiment. In this embodiment, in the inside of the vacuum chamber 1, two linear evaporation sources 2 are provided, and the vapor deposition material which is emitted from the vaporization materials of the respective evaporation sources 2 is prevented from reaching the surface of the substrate to form a scattering process of the film. At the position, two crystal oscillation type film thickness meters M are provided as monitors for film thickness control.

The crystal oscillation type film thickness meter M of the present embodiment is formed by depositing a vapor deposition material which is emitted from the evaporation source 2 on the surface of the crystal oscillator 4 (electrode film 5) which is vibrated at a constant frequency by the transmitter 7. The resonance frequency is changed according to the amount of deposition, and the vapor deposition rate and the film thickness are calculated from the film thickness display portion 11 from the resonance frequency change amount, and the value is fed back to the heating control unit 8 to make the heater power of the evaporation source 2 Control and make the vapor deposition rate constant.

Further, in order to suppress the amount of the vapor deposition material emitted from the evaporation source 2 from adhering to the surface of the crystal oscillator 4, a crystal oscillator 4 is used for a long period of time, and is disposed so as to rotate at a fixed speed. A stopper (not shown) that shields the member from the non-opening portion.

The crystal oscillation type film thickness meter M as the film thickness control monitor of this embodiment is provided with a crystal holder 14 which can store a plurality of crystal oscillators 4 shown in Fig. 2, and is evaporated in the crystal holder 14. The source 2 side is provided with a cover member 15 having an opening portion 10 provided at one of the positions of the crystal oscillator 4 shown in FIG. 3, and the crystal holder 14 is rotated so as to be switchably disposed at a position provided in the opening portion 10 of the cover member 15. The use of the crystal oscillator 4 makes it possible to continuously monitor the vapor deposition rate over a long period of time.

In addition, FIG. 4 is a view showing a configuration of a vacuum vapor deposition apparatus including a plurality of organic vapor deposition chambers 12 for manufacturing an organic EL device. Load chamber, pre-treatment The chamber, the organic vapor deposition chamber, the mask storage chamber, the transfer device, the transfer chamber, the metal deposition chamber, and the discharge chamber are configured. The organic EL device is formed by laminating a plurality of organic layers, so that the vacuum evaporation device is layered. A plurality of organic vapor deposition chambers 12 are provided, and among the organic materials evaporated by the evaporation source 2 used therein, the optimum organic material is selected as the organic material base film 6 in view of the vapor deposition rate and the film characteristics, and the crystal oscillation type is used. The film thickness meter M is used by switching the crystal oscillator 4 in accordance with a certain film thickness, so that the use as a film thickness monitor can be established simultaneously with the formation of the base film.

This selection is made as the organic material B of the organic material underlying film 6, as in the case where the equivalent series resistance of the crystal oscillator 4 is not easily increased as described above. Specifically, it is selected that the adhesion to the electrode film 5 is better than the organic material A as the vapor deposition material, and the followability to the thickness shear vibration of the crystal oscillator 4 becomes high, and the organic material is also used. The compatibility of A is better than that of the base film, and the interface of the film is also unclear. Even if the thickness of the deposited film is increased, the rise of the equivalent series resistance can be suppressed, so that the oscillation frequency becomes stable and can be accurately determined. Can increase life expectancy. For this reason, the organic material B forming the organic material base film 6 is an organic material composed of an organic substance containing at least one or more carbon atoms different from the vapor deposition material A (organic material A) as described above.

Further, when the base film is not made of an organic material and a metal film using a metal material is used, even if the adhesion to the electrode film 5 is improved, an interface with the vapor deposition material A (organic material A) is generated, so that the equivalent series resistance rises. The life expectancy is short.

That is, the organic material B forming the base film 6 of the organic material is used An organic material having good compatibility with the vapor deposition material A (organic material A) evaporated thereon, and the adhesion to the electrode film 5 is selected from among the organic materials for monitoring the film thickness in the vacuum evaporation apparatus. Organic material A high organic material B.

In addition, in the case where the electrode formed on the front surface and the back surface of the crystal oscillator 4 is an alloy containing Al as a main component, the electrode film 5 is formed as compared with a metal having low reactivity such as Au or Ag. The adhesion to the vapor deposition material is preferably changed, and the increase in the equivalent series resistance of the crystal oscillator 4 can be suppressed.

Fig. 5 is a schematic configuration of the crystal oscillator 4 of the present embodiment, and the electrode film 5 made of Al or an alloy containing Al as a main component is formed on the front and back surfaces of the crystal as described above.

It is assumed that the Al system is easily oxidized, and an oxide film covered with oxygen is formed on the surface of the electrode film 5, so that the adhesion between the organic molecules of the organic material in which the oxygen molecules having high reactivity are vapor-deposited and the electrode film 5 is improved, so that the vapor deposition film can be improved. Follows the resonance of the crystal oscillator 4.

Fig. 6 is a view showing a pattern in which an organic material is vapor-deposited on the electrode film 5 of the crystal oscillator 4 in terms of a pre-deposited preliminary film to form an organic material base film 6, on which the organic material base film 6 is steamed. When the organic material used in the vapor deposition process is plated, the equivalent series resistance does not rise and is stable.

The stabilization time of the equivalent series resistance value when the film thickness of the organic material base film 6 is 0.16 μm is 1, and the equivalent series resistance value when the film thickness of the organic material base film 6 is 0.78 μm, 1.57 μm, and 3.13 μm is shown. Stable Ratio between.

When the film thickness of the organic material base film 6 is 0.16 μm, the film thickness of the organic material base film 6 is increased to a thickness of 0.78 μm, 1.57 μm, and 3.13 μm, and the stable time ratio of the equivalent series resistance becomes long. In 1.3, 2.2, 6.8.

Therefore, the thicker the vapor-deposited organic material base film 6 is, the more the increase in the equivalent series resistance value can be suppressed, but the base film is vapor-deposited to a thicker extent, and the vapor deposition material formed thereon is less vapor-deposited. Therefore, it is preferable that the thickness of the base film is at least 2 μm or more, and the number of crystal oscillators 4 stored in the crystal holder 14 and the vapor deposition time are taken into consideration, and the film thickness of the base film and the number of the crystal oscillators 4 are determined.

Fig. 7 is a plan view showing a schematic configuration in the case of a moving mechanism 13 in which the crystal oscillation type film thickness meter M is moved integrally at the same time. There are two evaporation sources 2 in the organic vapor deposition chamber 12, and the crystal oscillation type film thickness meter M has three more than the number of evaporation sources 2. In the crystal oscillation type film thickness meter M in which the equivalent series resistance is increased during vapor deposition, the crystal oscillator 4 with the organic material base film 6 is disposed in advance, and the other two are equipped with a new crystal oscillator 4. When the organic material is evaporated over a long period of time, the number of crystal oscillators 4 used for film thickness monitoring is insufficient, and there is a need for exchange.

At this time, the three crystal oscillation type film thickness meters M are entirely moved in the short-side direction of the evaporation source 2, so that the crystal oscillation type film thickness meter M whose film thickness is monitored is changed, and the film thickness monitoring can be continued.

Specifically, the crystal oscillator 4 with the organic material base film 6 is attached The crystal oscillation type film thickness meter M for film thickness monitoring is not retracted (this is not used after the retraction movement), and the crystal oscillation type film thickness meter M which is formed at the same time as the film thickness monitoring and the formation of the base film is moved and used instead. In the film thickness meter of the organic material in which the base is formed, the film thickness gauge of the organic material which is formed by the base is used, and the film thickness gauge which is in standby is used.

Therefore, the evaporation of the organic material emitted from the evaporation source 2 is not stopped, and after cooling, the inside of the vacuum chamber 1 is evacuated to atmospheric pressure, and the crystal oscillator 4 of the crystal oscillation type film thickness meter M is exchanged. Continue to monitor film thickness for a long time.

Fig. 8 shows the above-described moving mechanism 13 of the crystal oscillation type film thickness meter M in the vacuum evaporation apparatus. The flexible pipe of the crystal oscillation type film thickness meter M is connected to the atmospheric pressure space (atmosphere BOX) in the vacuum chamber 1, and the atmospheric arm having the joint portion is connected to the atmospheric pressure space outside the vacuum chamber 1 by the atmosphere BOX. The aforementioned atmospheric BOX is made movable. According to the above configuration, the electric wiring, the coaxial cable, the water-cooled piping, and the like can be moved while being introduced into the crystal oscillation type film thickness meter M in the vacuum chamber 1 from the atmospheric pressure space outside the vacuum chamber 1.

Further, the present invention is not limited to the embodiment, and the specific configuration of each constituent element can be appropriately designed.

1‧‧‧vacuum tank

2‧‧‧ evaporation source

7‧‧‧transmitter

8‧‧‧Heating Control Department

11‧‧‧ Film thickness display

12‧‧‧Organic evaporation chamber

14‧‧‧ crystal holder

15‧‧‧Cleaning pieces

M‧‧‧crystal oscillator type film thickness meter

Claims (11)

A vacuum vapor deposition apparatus in which an organic material of a vapor deposition material evaporated from at least two or more evaporation sources is deposited on a surface of a substrate to form a thin film in a vacuum chamber, and is characterized in that it has at least 2 in the vacuum chamber. One or more crystal oscillation type film thickness gauges for controlling the film thickness or the vapor deposition rate of the surface of the substrate, wherein the crystal oscillation film thickness meter includes a plurality of crystal oscillators, and one of the evaporation sources One of the above-described crystal oscillation type film thickness gauges is obtained by exchanging an organic material which is evaporated from another evaporation source which has a predetermined film thickness in advance, and is exchanged into a next crystal oscillator. The plurality of crystal oscillators included in the crystal oscillation type film thickness meter are respectively formed with a certain film thickness of the organic material base film simultaneously with the film thickness monitoring in the evaporation process using the other evaporation sources in the rest. The constitution of a plurality of crystal oscillators with a base film of an organic material ends with an evaporation process using other evaporation sources among the rest By attaching the organic material comprising the base film of a crystal oscillator crystal oscillator type film thickness meter, the film thickness monitor using the aforementioned vapor deposition wherein a program of the evaporation source. The vacuum vapor deposition apparatus according to the first aspect of the invention is characterized in that the vacuum chamber is composed of a plurality of organic vapor deposition chambers, and each of the evaporation sources and the crystal oscillation are disposed in each of the organic vapor deposition chambers. The above-mentioned plurality of crystal oscillators of the above-mentioned crystal oscillation type film thickness meter disposed in one of the organic vapor deposition chambers are formed by a predetermined thickness of the other organic vapor deposition chambers from the rest. When the evaporation source is evaporated, the organic material is exchanged into the next crystal oscillator to oscillate a plurality of crystals. Forming the foregoing organic material base film on the device, and performing the vapor deposition process using the evaporation source of the one of the organic vapor deposition chambers by the crystal oscillation type film thickness meter having the crystal oscillator with the organic material base film Film thickness monitoring. The vacuum vapor deposition device according to claim 1, wherein the organic material base film formed on each of the crystal oscillators has a film thickness of at least 2 μm. The vacuum vapor deposition device according to claim 2, wherein the organic material base film formed on each of the crystal oscillators has a film thickness of at least 2 μm. The vacuum vapor deposition device according to any one of claims 1 to 4, wherein the electrode film formed on the front surface and the back surface of the crystal oscillator is formed of Al or a plurality of metals mainly composed of Al. . The vacuum vapor deposition apparatus according to any one of the first to fourth aspects of the present invention, comprising: a moving mechanism that moves the crystal oscillation type film thickness meter, and organically evaporated from the other evaporation source among the remaining ones; The material is controlled to form a film thickness or a vapor deposition rate, and is vapor-deposited on each of the crystal oscillators to form the base film of the organic material. After the evaporation process of the other evaporation source is completed, the moving mechanism is used. Moving the crystal oscillating film thickness meter, an organic material evaporated from one of the evaporation sources is formed on the organic material base film crystal oscillator, thereby controlling one of the evaporation sources to control the film thickness of the surface of the substrate or The vapor deposition rate is monitored by film thickness in an evaporation process using one of the evaporation sources. Such as the vacuum evaporation device of claim 5, the composition thereof The moving mechanism for moving the crystal oscillation type film thickness meter is vapor-deposited on each of the crystal oscillators while controlling the film thickness or the vapor deposition rate from the other organic materials evaporated by the other evaporation sources. Forming the base material film of the organic material, after the vapor deposition process using the other evaporation sources in the rest, the crystal oscillation type film thickness meter is moved by the moving mechanism, and the organic material evaporated from the one evaporation source Formed on the organic material base film crystal oscillator, thereby controlling one of the evaporation sources to control the film thickness or vapor deposition rate of the substrate surface and performing film thickness monitoring in the evaporation process using one of the evaporation sources. The vacuum vapor deposition device according to any one of claims 1 to 4, wherein the organic material is used for producing an organic material for an organic EL device. The vacuum vapor deposition device of claim 5, wherein the organic material is used for producing an organic material for an organic EL device. The vacuum vapor deposition device of claim 6, wherein the organic material is used for producing an organic material for an organic EL device. The vacuum vapor deposition device of claim 7, wherein the organic material is used for producing an organic material for an organic EL device.