KR20160037077A - 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 - Google Patents

기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 Download PDF

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Publication number
KR20160037077A
KR20160037077A KR1020150124041A KR20150124041A KR20160037077A KR 20160037077 A KR20160037077 A KR 20160037077A KR 1020150124041 A KR1020150124041 A KR 1020150124041A KR 20150124041 A KR20150124041 A KR 20150124041A KR 20160037077 A KR20160037077 A KR 20160037077A
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KR
South Korea
Prior art keywords
gas
discharge chamber
chamber
pressure
process gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020150124041A
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English (en)
Korean (ko)
Inventor
카즈유키 토요다
아츠시 우메카와
마코토 카와바타
코지 시바타
Original Assignee
가부시키가이샤 히다치 고쿠사이 덴키
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시키가이샤 히다치 고쿠사이 덴키 filed Critical 가부시키가이샤 히다치 고쿠사이 덴키
Publication of KR20160037077A publication Critical patent/KR20160037077A/ko
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L21/02274—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01L21/02—
    • H01L21/02315—
    • H01L21/0234—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
KR1020150124041A 2014-09-26 2015-09-02 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 Abandoned KR20160037077A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014196414A JP6415215B2 (ja) 2014-09-26 2014-09-26 基板処理装置、半導体装置の製造方法及びプログラム
JPJP-P-2014-196414 2014-09-26

Publications (1)

Publication Number Publication Date
KR20160037077A true KR20160037077A (ko) 2016-04-05

Family

ID=55585230

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150124041A Abandoned KR20160037077A (ko) 2014-09-26 2015-09-02 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램

Country Status (3)

Country Link
US (2) US20160093476A1 (enExample)
JP (1) JP6415215B2 (enExample)
KR (1) KR20160037077A (enExample)

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* Cited by examiner, † Cited by third party
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JP6830878B2 (ja) * 2017-09-28 2021-02-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、プログラム
CN110648910A (zh) 2018-06-26 2020-01-03 株式会社国际电气 半导体器件的制造方法、零件的管理方法、基板处理装置及记录介质
JP7254620B2 (ja) 2018-06-26 2023-04-10 株式会社Kokusai Electric 半導体装置の製造方法、部品の管理方法、基板処理装置及び基板処理プログラム
WO2020188654A1 (ja) * 2019-03-15 2020-09-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US11527380B2 (en) * 2020-04-01 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Ion implanter toxic gas delivery system
JP7203070B2 (ja) * 2020-09-23 2023-01-12 株式会社Kokusai Electric 基板処理装置、基板処理方法及び半導体装置の製造方法
JP7284139B2 (ja) 2020-11-27 2023-05-30 株式会社Kokusai Electric 半導体装置の製造方法、プログラム、基板処理装置および基板処理方法

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JP2942138B2 (ja) * 1994-03-22 1999-08-30 三菱電機株式会社 プラズマ処理装置及びプラズマ処理方法
JPH10312899A (ja) * 1997-05-15 1998-11-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
AR041013A1 (es) * 2002-12-04 2005-04-27 Yt Ingenieria Ltda Aparato dosificador de gas y metodo para dosificar cantidades predeterminadas de gas
US7628860B2 (en) * 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
KR100860437B1 (ko) * 2004-10-07 2008-09-25 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 디바이스의 제조 방법
US8453600B2 (en) * 2004-12-28 2013-06-04 Hitachi Kokusai Electric Inc. Substrate processing apparatus
KR101161020B1 (ko) * 2006-03-30 2012-07-02 미쯔이 죠센 가부시키가이샤 원자층 성장 장치
JP4978355B2 (ja) * 2007-07-19 2012-07-18 富士通セミコンダクター株式会社 成膜装置及びそのコーティング方法
JP4977636B2 (ja) * 2008-02-06 2012-07-18 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP5616591B2 (ja) * 2008-06-20 2014-10-29 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP2010027702A (ja) * 2008-07-16 2010-02-04 Hitachi Kokusai Electric Inc 基板処理装置及び薄膜生成方法
JP2010129666A (ja) * 2008-11-26 2010-06-10 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
US8557687B2 (en) * 2009-07-23 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing thin film transistor
JP5520552B2 (ja) * 2009-09-11 2014-06-11 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US8486192B2 (en) * 2010-09-30 2013-07-16 Soitec Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
TWI562204B (en) * 2010-10-26 2016-12-11 Hitachi Int Electric Inc Substrate processing apparatus, semiconductor device manufacturing method and computer-readable recording medium
JP5886531B2 (ja) * 2011-02-24 2016-03-16 東京エレクトロン株式会社 成膜方法および成膜装置
JP5946643B2 (ja) * 2012-01-13 2016-07-06 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法及び基板処理装置
JP5824372B2 (ja) * 2012-01-25 2015-11-25 東京エレクトロン株式会社 処理装置及びプロセス状態の確認方法
JP5547763B2 (ja) * 2012-03-16 2014-07-16 三井造船株式会社 プラズマ生成方法、この方法を用いた薄膜形成方法及びプラズマ生成装置
JP6245643B2 (ja) * 2013-03-28 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6011420B2 (ja) * 2013-03-29 2016-10-19 東京エレクトロン株式会社 縦型熱処理装置の運転方法、縦型熱処理装置及び記憶媒体

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Publication number Publication date
US20240222086A1 (en) 2024-07-04
JP6415215B2 (ja) 2018-10-31
JP2016072260A (ja) 2016-05-09
US20160093476A1 (en) 2016-03-31

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