KR20150130557A - 조정 가능한 질량 분해 애퍼쳐 - Google Patents

조정 가능한 질량 분해 애퍼쳐 Download PDF

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Publication number
KR20150130557A
KR20150130557A KR1020157029879A KR20157029879A KR20150130557A KR 20150130557 A KR20150130557 A KR 20150130557A KR 1020157029879 A KR1020157029879 A KR 1020157029879A KR 20157029879 A KR20157029879 A KR 20157029879A KR 20150130557 A KR20150130557 A KR 20150130557A
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KR
South Korea
Prior art keywords
ion
ion beam
mra
ions
mass
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Application number
KR1020157029879A
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English (en)
Korean (ko)
Inventor
글렌 이. 레인
Original Assignee
글렌 레인 패밀리 리미티드 리에빌러티 리미티드 파트너쉽
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Publication of KR20150130557A publication Critical patent/KR20150130557A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/06—Electron- or ion-optical arrangements
    • H01J49/062—Ion guides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0455—Diaphragms with variable aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020157029879A 2013-03-15 2014-03-17 조정 가능한 질량 분해 애퍼쳐 Withdrawn KR20150130557A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361800855P 2013-03-15 2013-03-15
US61/800,855 2013-03-15
PCT/US2014/030744 WO2014145898A2 (en) 2013-03-15 2014-03-17 Adjustable mass resolving aperture

Publications (1)

Publication Number Publication Date
KR20150130557A true KR20150130557A (ko) 2015-11-23

Family

ID=51521619

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157029879A Withdrawn KR20150130557A (ko) 2013-03-15 2014-03-17 조정 가능한 질량 분해 애퍼쳐

Country Status (7)

Country Link
US (4) US9401260B2 (enExample)
EP (1) EP2973663B1 (enExample)
JP (1) JP6500009B2 (enExample)
KR (1) KR20150130557A (enExample)
CN (1) CN105247660B (enExample)
HK (1) HK1220287A1 (enExample)
WO (1) WO2014145898A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019125597A1 (en) * 2017-12-21 2019-06-27 Varian Semiconductor Equipment Associates, Inc. Ion beam quality control using a movable mass resolving device
WO2021011415A1 (en) * 2019-07-12 2021-01-21 Leco Corporation Methods and systems for multi-pass encoded frequency pushing
US11574796B1 (en) 2021-07-21 2023-02-07 Applied Materials, Inc. Dual XY variable aperture in an ion implantation system
KR20240092530A (ko) * 2022-12-13 2024-06-24 주식회사 아바코 다중 이온 소스를 이용한 이온 주입 시스템

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TW201635326A (zh) * 2014-12-26 2016-10-01 艾克塞利斯科技公司 在具有射束減速的離子植入器中用於射束角度調整的系統及方法
US9685298B1 (en) * 2016-02-01 2017-06-20 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for contamination control in ion beam apparatus
US9953801B1 (en) * 2016-11-29 2018-04-24 Axcelis Technologies, Inc. Two-axis variable width mass resolving aperture with fast acting shutter motion
JP6831245B2 (ja) * 2017-01-06 2021-02-17 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
US11469108B2 (en) 2018-08-31 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. System, semiconductor device and method
JP2020048607A (ja) * 2018-09-21 2020-04-02 株式会社日立製作所 粒子線治療システムおよびその拡張方法
JP7019544B2 (ja) * 2018-10-29 2022-02-15 三菱電機株式会社 イオン注入装置
US11189460B1 (en) * 2020-11-06 2021-11-30 Applied Materials, Inc. System, apparatus and method for variable length electrode in linear accelerator
CN120420819A (zh) 2021-10-01 2025-08-05 阳光技术有限责任公司 用于离子收集的方法

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019125597A1 (en) * 2017-12-21 2019-06-27 Varian Semiconductor Equipment Associates, Inc. Ion beam quality control using a movable mass resolving device
US11049691B2 (en) 2017-12-21 2021-06-29 Varian Semiconductor Equipment Associates, Inc. Ion beam quality control using a movable mass resolving device
WO2021011415A1 (en) * 2019-07-12 2021-01-21 Leco Corporation Methods and systems for multi-pass encoded frequency pushing
GB2599580A (en) * 2019-07-12 2022-04-06 Leco Corp Methods and systems for multi-pass encoded frequency pushing
US12100584B2 (en) 2019-07-12 2024-09-24 Leco Corporation Methods and systems for multi-pass encoded frequency pushing
GB2599580B (en) * 2019-07-12 2025-04-09 Leco Corp Methods and systems for multi-pass encoded frequency pushing
US11574796B1 (en) 2021-07-21 2023-02-07 Applied Materials, Inc. Dual XY variable aperture in an ion implantation system
KR20240092530A (ko) * 2022-12-13 2024-06-24 주식회사 아바코 다중 이온 소스를 이용한 이온 주입 시스템

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Publication number Publication date
HK1220287A1 (zh) 2017-04-28
CN105247660A (zh) 2016-01-13
EP2973663A2 (en) 2016-01-20
EP2973663B1 (en) 2018-04-18
EP2973663A4 (en) 2016-10-05
US10083815B2 (en) 2018-09-25
US9401260B2 (en) 2016-07-26
US20160240350A1 (en) 2016-08-18
US9496120B2 (en) 2016-11-15
JP6500009B2 (ja) 2019-04-10
US20190172679A1 (en) 2019-06-06
WO2014145898A2 (en) 2014-09-18
US20160240349A1 (en) 2016-08-18
CN105247660B (zh) 2018-06-12
US20140261173A1 (en) 2014-09-18
WO2014145898A3 (en) 2015-02-26
JP2016520951A (ja) 2016-07-14

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