JP6500009B2 - 調節可能な質量分析アパーチャ - Google Patents
調節可能な質量分析アパーチャ Download PDFInfo
- Publication number
- JP6500009B2 JP6500009B2 JP2016503455A JP2016503455A JP6500009B2 JP 6500009 B2 JP6500009 B2 JP 6500009B2 JP 2016503455 A JP2016503455 A JP 2016503455A JP 2016503455 A JP2016503455 A JP 2016503455A JP 6500009 B2 JP6500009 B2 JP 6500009B2
- Authority
- JP
- Japan
- Prior art keywords
- ions
- implantation system
- ion
- ion implantation
- fin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004949 mass spectrometry Methods 0.000 title claims description 36
- 150000002500 ions Chemical class 0.000 claims description 137
- 230000005291 magnetic effect Effects 0.000 claims description 86
- 238000010884 ion-beam technique Methods 0.000 claims description 83
- 238000005468 ion implantation Methods 0.000 claims description 48
- 230000033001 locomotion Effects 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 8
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- 229910052802 copper Inorganic materials 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001481833 Coryphaena hippurus Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 101150030891 MRAS gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
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- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
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- 230000005055 memory storage Effects 0.000 description 1
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- 239000003345 natural gas Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
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- 230000003094 perturbing effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/06—Electron- or ion-optical arrangements
- H01J49/062—Ion guides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0455—Diaphragms with variable aperture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/152—Magnetic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/26—Mass spectrometers or separator tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361800855P | 2013-03-15 | 2013-03-15 | |
| US61/800,855 | 2013-03-15 | ||
| PCT/US2014/030744 WO2014145898A2 (en) | 2013-03-15 | 2014-03-17 | Adjustable mass resolving aperture |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016520951A JP2016520951A (ja) | 2016-07-14 |
| JP2016520951A5 JP2016520951A5 (enExample) | 2017-06-01 |
| JP6500009B2 true JP6500009B2 (ja) | 2019-04-10 |
Family
ID=51521619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016503455A Expired - Fee Related JP6500009B2 (ja) | 2013-03-15 | 2014-03-17 | 調節可能な質量分析アパーチャ |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US9401260B2 (enExample) |
| EP (1) | EP2973663B1 (enExample) |
| JP (1) | JP6500009B2 (enExample) |
| KR (1) | KR20150130557A (enExample) |
| CN (1) | CN105247660B (enExample) |
| HK (1) | HK1220287A1 (enExample) |
| WO (1) | WO2014145898A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201635326A (zh) * | 2014-12-26 | 2016-10-01 | 艾克塞利斯科技公司 | 在具有射束減速的離子植入器中用於射束角度調整的系統及方法 |
| US9685298B1 (en) * | 2016-02-01 | 2017-06-20 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for contamination control in ion beam apparatus |
| US9953801B1 (en) * | 2016-11-29 | 2018-04-24 | Axcelis Technologies, Inc. | Two-axis variable width mass resolving aperture with fast acting shutter motion |
| JP6831245B2 (ja) * | 2017-01-06 | 2021-02-17 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法およびイオン注入装置 |
| US11049691B2 (en) * | 2017-12-21 | 2021-06-29 | Varian Semiconductor Equipment Associates, Inc. | Ion beam quality control using a movable mass resolving device |
| US11469108B2 (en) | 2018-08-31 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | System, semiconductor device and method |
| JP2020048607A (ja) * | 2018-09-21 | 2020-04-02 | 株式会社日立製作所 | 粒子線治療システムおよびその拡張方法 |
| JP7019544B2 (ja) * | 2018-10-29 | 2022-02-15 | 三菱電機株式会社 | イオン注入装置 |
| DE112020003336B4 (de) * | 2019-07-12 | 2024-06-06 | Leco Corporation | Verfahren und Systeme für mehrpasscodierte Frequenzverschiebung |
| US11189460B1 (en) * | 2020-11-06 | 2021-11-30 | Applied Materials, Inc. | System, apparatus and method for variable length electrode in linear accelerator |
| US11574796B1 (en) * | 2021-07-21 | 2023-02-07 | Applied Materials, Inc. | Dual XY variable aperture in an ion implantation system |
| CN120420819A (zh) | 2021-10-01 | 2025-08-05 | 阳光技术有限责任公司 | 用于离子收集的方法 |
| KR102816188B1 (ko) * | 2022-12-13 | 2025-06-11 | 주식회사 아바코 | 다중 이온 소스를 이용한 이온 주입 시스템 |
Family Cites Families (83)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3031396A (en) | 1957-09-11 | 1962-04-24 | Oscar A Anderson | Stabilized pinch machine |
| NL109951C (enExample) | 1959-05-28 | |||
| BE634510A (enExample) * | 1962-07-05 | |||
| US3191092A (en) | 1962-09-20 | 1965-06-22 | William R Baker | Plasma propulsion device having special magnetic field |
| US3643123A (en) | 1968-10-28 | 1972-02-15 | Trw Inc | Plasma containment device |
| US3713043A (en) | 1969-12-19 | 1973-01-23 | Yissum Res Dev Co | Gas lasers with electrically-conductive plasma tube |
| US3624240A (en) | 1970-03-24 | 1971-11-30 | Atomic Energy Commission | Feedback stabilization of a magnetically confined plasma |
| US3939354A (en) | 1973-02-02 | 1976-02-17 | Jersey Nuclear-Avco Isotopes, Inc. | Method and apparatus for separation of ions from a plasma |
| US3992625A (en) | 1973-12-27 | 1976-11-16 | Jersey Nuclear-Avco Isotopes, Inc. | Method and apparatus for extracting ions from a partially ionized plasma using a magnetic field gradient |
| US4636287A (en) | 1974-04-29 | 1987-01-13 | Jersey Nuclear-Avco Isotopes, Inc. | Frequency swept laser system for isotope excitation |
| IL47139A (en) | 1974-05-13 | 1977-07-31 | Jersey Nuclear Avco Isotopes | Method and apparatus for impact ionization of particles |
| US4257013A (en) | 1974-06-25 | 1981-03-17 | Jersey Nuclear-Avco Isotopes, Inc. | Adiabatic inversion for selective excitation |
| US4172008A (en) | 1977-08-23 | 1979-10-23 | Dubble Whammy, Inc. | Nuclear fusion reactor |
| US4397809A (en) | 1979-03-16 | 1983-08-09 | Energy Profiles, Inc. | Charged particle machine |
| CH649231A5 (de) | 1980-10-28 | 1985-05-15 | Hans Christoph Siegmann Prof D | Verfahren zum elektrischen aufladen von schwebeteilchen in gasen. |
| US4434130A (en) | 1980-11-03 | 1984-02-28 | Energy Profiles, Inc. | Electron space charge channeling for focusing ion beams |
| US4847504A (en) * | 1983-08-15 | 1989-07-11 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
| US4728796A (en) | 1986-04-10 | 1988-03-01 | Medical College Of Wisconsin | Method for ionization of polymers |
| JPH01132038A (ja) * | 1987-11-18 | 1989-05-24 | Toshiba Corp | 質量分析装置 |
| USH693H (en) | 1989-02-24 | 1989-10-03 | The United States Of America As Represented By The Secretary Of The Army | PYX twister with superconducting confinement |
| US4893103A (en) | 1989-02-24 | 1990-01-09 | The United States Of America As Represented By The Secretary Of The Army | Superconducting PYX structures |
| US4859973A (en) | 1989-03-23 | 1989-08-22 | The United States Of America As Represented By The Secretary Of The Army | Superconducting shielded PYX PPM stacks |
| JPH03219544A (ja) * | 1989-06-06 | 1991-09-26 | Mitsubishi Electric Corp | 荷電粒子注入装置 |
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-
2014
- 2014-03-17 US US14/217,064 patent/US9401260B2/en not_active Expired - Fee Related
- 2014-03-17 HK HK16108163.6A patent/HK1220287A1/zh unknown
- 2014-03-17 WO PCT/US2014/030744 patent/WO2014145898A2/en not_active Ceased
- 2014-03-17 CN CN201480027405.2A patent/CN105247660B/zh not_active Expired - Fee Related
- 2014-03-17 EP EP14764536.0A patent/EP2973663B1/en not_active Not-in-force
- 2014-03-17 KR KR1020157029879A patent/KR20150130557A/ko not_active Withdrawn
- 2014-03-17 JP JP2016503455A patent/JP6500009B2/ja not_active Expired - Fee Related
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2016
- 2016-04-22 US US15/136,503 patent/US9496120B2/en not_active Expired - Fee Related
- 2016-04-22 US US15/136,524 patent/US10083815B2/en active Active
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2018
- 2018-09-25 US US16/141,083 patent/US20190172679A1/en not_active Abandoned
Also Published As
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|---|---|
| HK1220287A1 (zh) | 2017-04-28 |
| CN105247660A (zh) | 2016-01-13 |
| EP2973663A2 (en) | 2016-01-20 |
| EP2973663B1 (en) | 2018-04-18 |
| EP2973663A4 (en) | 2016-10-05 |
| KR20150130557A (ko) | 2015-11-23 |
| US10083815B2 (en) | 2018-09-25 |
| US9401260B2 (en) | 2016-07-26 |
| US20160240350A1 (en) | 2016-08-18 |
| US9496120B2 (en) | 2016-11-15 |
| US20190172679A1 (en) | 2019-06-06 |
| WO2014145898A2 (en) | 2014-09-18 |
| US20160240349A1 (en) | 2016-08-18 |
| CN105247660B (zh) | 2018-06-12 |
| US20140261173A1 (en) | 2014-09-18 |
| WO2014145898A3 (en) | 2015-02-26 |
| JP2016520951A (ja) | 2016-07-14 |
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