JP2016520951A5 - - Google Patents

Download PDF

Info

Publication number
JP2016520951A5
JP2016520951A5 JP2016503455A JP2016503455A JP2016520951A5 JP 2016520951 A5 JP2016520951 A5 JP 2016520951A5 JP 2016503455 A JP2016503455 A JP 2016503455A JP 2016503455 A JP2016503455 A JP 2016503455A JP 2016520951 A5 JP2016520951 A5 JP 2016520951A5
Authority
JP
Japan
Prior art keywords
implantation system
ion implantation
ions
ion
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016503455A
Other languages
English (en)
Japanese (ja)
Other versions
JP6500009B2 (ja
JP2016520951A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2014/030744 external-priority patent/WO2014145898A2/en
Publication of JP2016520951A publication Critical patent/JP2016520951A/ja
Publication of JP2016520951A5 publication Critical patent/JP2016520951A5/ja
Application granted granted Critical
Publication of JP6500009B2 publication Critical patent/JP6500009B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016503455A 2013-03-15 2014-03-17 調節可能な質量分析アパーチャ Expired - Fee Related JP6500009B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361800855P 2013-03-15 2013-03-15
US61/800,855 2013-03-15
PCT/US2014/030744 WO2014145898A2 (en) 2013-03-15 2014-03-17 Adjustable mass resolving aperture

Publications (3)

Publication Number Publication Date
JP2016520951A JP2016520951A (ja) 2016-07-14
JP2016520951A5 true JP2016520951A5 (enExample) 2017-06-01
JP6500009B2 JP6500009B2 (ja) 2019-04-10

Family

ID=51521619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016503455A Expired - Fee Related JP6500009B2 (ja) 2013-03-15 2014-03-17 調節可能な質量分析アパーチャ

Country Status (7)

Country Link
US (4) US9401260B2 (enExample)
EP (1) EP2973663B1 (enExample)
JP (1) JP6500009B2 (enExample)
KR (1) KR20150130557A (enExample)
CN (1) CN105247660B (enExample)
HK (1) HK1220287A1 (enExample)
WO (1) WO2014145898A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201635326A (zh) * 2014-12-26 2016-10-01 艾克塞利斯科技公司 在具有射束減速的離子植入器中用於射束角度調整的系統及方法
US9685298B1 (en) * 2016-02-01 2017-06-20 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for contamination control in ion beam apparatus
US9953801B1 (en) * 2016-11-29 2018-04-24 Axcelis Technologies, Inc. Two-axis variable width mass resolving aperture with fast acting shutter motion
JP6831245B2 (ja) * 2017-01-06 2021-02-17 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
US11049691B2 (en) * 2017-12-21 2021-06-29 Varian Semiconductor Equipment Associates, Inc. Ion beam quality control using a movable mass resolving device
US11469108B2 (en) * 2018-08-31 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. System, semiconductor device and method
JP2020048607A (ja) * 2018-09-21 2020-04-02 株式会社日立製作所 粒子線治療システムおよびその拡張方法
JP7019544B2 (ja) * 2018-10-29 2022-02-15 三菱電機株式会社 イオン注入装置
US12100584B2 (en) 2019-07-12 2024-09-24 Leco Corporation Methods and systems for multi-pass encoded frequency pushing
US11189460B1 (en) * 2020-11-06 2021-11-30 Applied Materials, Inc. System, apparatus and method for variable length electrode in linear accelerator
US11574796B1 (en) * 2021-07-21 2023-02-07 Applied Materials, Inc. Dual XY variable aperture in an ion implantation system
US12112859B2 (en) 2021-10-01 2024-10-08 Shine Technologies, Llc Ion production system with fibrous lattice for ion collection
KR102816188B1 (ko) * 2022-12-13 2025-06-11 주식회사 아바코 다중 이온 소스를 이용한 이온 주입 시스템

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3031396A (en) 1957-09-11 1962-04-24 Oscar A Anderson Stabilized pinch machine
LU38623A1 (enExample) 1959-05-28
NL294850A (enExample) * 1962-07-05
US3191092A (en) 1962-09-20 1965-06-22 William R Baker Plasma propulsion device having special magnetic field
US3643123A (en) 1968-10-28 1972-02-15 Trw Inc Plasma containment device
US3713043A (en) 1969-12-19 1973-01-23 Yissum Res Dev Co Gas lasers with electrically-conductive plasma tube
US3624240A (en) 1970-03-24 1971-11-30 Atomic Energy Commission Feedback stabilization of a magnetically confined plasma
US3939354A (en) 1973-02-02 1976-02-17 Jersey Nuclear-Avco Isotopes, Inc. Method and apparatus for separation of ions from a plasma
US3992625A (en) 1973-12-27 1976-11-16 Jersey Nuclear-Avco Isotopes, Inc. Method and apparatus for extracting ions from a partially ionized plasma using a magnetic field gradient
US4636287A (en) 1974-04-29 1987-01-13 Jersey Nuclear-Avco Isotopes, Inc. Frequency swept laser system for isotope excitation
IL47139A (en) 1974-05-13 1977-07-31 Jersey Nuclear Avco Isotopes Method and apparatus for impact ionization of particles
US4257013A (en) 1974-06-25 1981-03-17 Jersey Nuclear-Avco Isotopes, Inc. Adiabatic inversion for selective excitation
US4172008A (en) 1977-08-23 1979-10-23 Dubble Whammy, Inc. Nuclear fusion reactor
US4397809A (en) 1979-03-16 1983-08-09 Energy Profiles, Inc. Charged particle machine
CH649231A5 (de) 1980-10-28 1985-05-15 Hans Christoph Siegmann Prof D Verfahren zum elektrischen aufladen von schwebeteilchen in gasen.
US4434130A (en) 1980-11-03 1984-02-28 Energy Profiles, Inc. Electron space charge channeling for focusing ion beams
US4847504A (en) * 1983-08-15 1989-07-11 Applied Materials, Inc. Apparatus and methods for ion implantation
US4728796A (en) 1986-04-10 1988-03-01 Medical College Of Wisconsin Method for ionization of polymers
JPH01132038A (ja) * 1987-11-18 1989-05-24 Toshiba Corp 質量分析装置
US4893103A (en) 1989-02-24 1990-01-09 The United States Of America As Represented By The Secretary Of The Army Superconducting PYX structures
USH693H (en) 1989-02-24 1989-10-03 The United States Of America As Represented By The Secretary Of The Army PYX twister with superconducting confinement
US4859973A (en) 1989-03-23 1989-08-22 The United States Of America As Represented By The Secretary Of The Army Superconducting shielded PYX PPM stacks
JPH03219544A (ja) * 1989-06-06 1991-09-26 Mitsubishi Electric Corp 荷電粒子注入装置
US5130552A (en) * 1990-12-17 1992-07-14 Applied Materials, Inc. Improved ion implantation using a variable mass resolving system
EP0525927B1 (en) 1991-07-23 1995-09-27 Nissin Electric Company, Limited Ion source having a mass separation device
JPH05267888A (ja) 1992-03-17 1993-10-15 Ngk Insulators Ltd 円筒状超電導磁気シールド体
US5306920A (en) 1992-11-23 1994-04-26 Motorola, Inc. Ion implanter with beam resolving apparatus and method for implanting ions
US5359621A (en) 1993-05-11 1994-10-25 General Atomics High efficiency gas laser with axial magnetic field and tunable microwave resonant cavity
US5554857A (en) 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
GB2344214B (en) 1995-11-08 2000-08-09 Applied Materials Inc An ion implanter with improved beam definition
WO1997020620A1 (en) 1995-12-07 1997-06-12 The Regents Of The University Of California Improvements in method and apparatus for isotope enhancement in a plasma apparatus
US5917393A (en) 1997-05-08 1999-06-29 Northrop Grumman Corporation Superconducting coil apparatus and method of making
US6451207B1 (en) 1997-06-04 2002-09-17 Dexter Magnetic Technologies, Inc. Magnetic cell separation device
US7166816B1 (en) 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
GB2339069B (en) 1998-07-01 2003-03-26 Applied Materials Inc Ion implantation beam monitor
DE69942124D1 (de) 1998-09-25 2010-04-22 Oregon State Tandemflugzeitmassenspektrometer
US6322706B1 (en) 1999-07-14 2001-11-27 Archimedes Technology Group, Inc. Radial plasma mass filter
US6180085B1 (en) 2000-01-18 2001-01-30 Mallinckrodt Inc. Dyes
KR100353406B1 (ko) 2000-01-25 2002-09-18 주식회사 하이닉스반도체 위상 반전 마스크 및 그 제조 방법
US6525326B1 (en) * 2000-09-01 2003-02-25 Axcelis Technologies, Inc. System and method for removing particles entrained in an ion beam
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法
US6791097B2 (en) * 2001-01-18 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Adjustable conductance limiting aperture for ion implanters
US6398920B1 (en) 2001-02-21 2002-06-04 Archimedes Technology Group, Inc. Partially ionized plasma mass filter
US6784424B1 (en) 2001-05-26 2004-08-31 Ross C Willoughby Apparatus and method for focusing and selecting ions and charged particles at or near atmospheric pressure
US6585891B1 (en) 2002-02-28 2003-07-01 Archimedes Technology Group, Inc. Plasma mass separator using ponderomotive forces
JP3713683B2 (ja) 2002-03-05 2005-11-09 住友イートンノバ株式会社 イオンビームの質量分離フィルタとその質量分離方法及びこれを使用するイオン源
US7095019B1 (en) 2003-05-30 2006-08-22 Chem-Space Associates, Inc. Remote reagent chemical ionization source
US7253406B1 (en) 2002-06-01 2007-08-07 Chem-Space Associates, Incorporated Remote reagent chemical ionization source
US6726844B2 (en) 2002-06-12 2004-04-27 Archimedes Technology Group, Inc. Isotope separator
US6686595B2 (en) 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US6864773B2 (en) 2003-04-04 2005-03-08 Applied Materials, Inc. Variable field magnet apparatus
US8639489B2 (en) 2003-11-10 2014-01-28 Brooks Automation, Inc. Methods and systems for controlling a semiconductor fabrication process
US7112789B2 (en) * 2004-05-18 2006-09-26 White Nicholas R High aspect ratio, high mass resolution analyzer magnet and system for ribbon ion beams
US20060108931A1 (en) 2004-11-24 2006-05-25 Samsung Electronics Co., Ltd. Electromagnetic accelerator having nozzle part
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Sen ビーム照射装置
US7312444B1 (en) 2005-05-24 2007-12-25 Chem - Space Associates, Inc. Atmosperic pressure quadrupole analyzer
US8603252B2 (en) 2006-04-26 2013-12-10 Advanced Technology Materials, Inc. Cleaning of semiconductor processing systems
GB2438893B (en) 2006-06-09 2010-10-27 Applied Materials Inc Ion beams in an ion implanter
JP5296341B2 (ja) * 2006-07-14 2013-09-25 ティーイーエル・エピオン・インコーポレーテッド ガスクラスターイオンビーム加工装置における粒子汚染を低減するための装置および方法
US7227160B1 (en) * 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
US7619228B2 (en) * 2006-09-29 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for improved ion beam transport
US7479644B2 (en) 2006-10-30 2009-01-20 Applied Materials, Inc. Ion beam diagnostics
US7838849B2 (en) 2007-10-24 2010-11-23 Applied Materials, Inc. Ion implanters
US7700925B2 (en) 2007-12-28 2010-04-20 Varian Semiconductor Equipment Associates, Inc. Techniques for providing a multimode ion source
US7928413B2 (en) 2008-01-03 2011-04-19 Applied Materials, Inc. Ion implanters
US7994488B2 (en) 2008-04-24 2011-08-09 Axcelis Technologies, Inc. Low contamination, low energy beamline architecture for high current ion implantation
US8501624B2 (en) 2008-12-04 2013-08-06 Varian Semiconductor Equipment Associates, Inc. Excited gas injection for ion implant control
US8466431B2 (en) 2009-02-12 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Techniques for improving extracted ion beam quality using high-transparency electrodes
GB2470599B (en) 2009-05-29 2014-04-02 Thermo Fisher Scient Bremen Charged particle analysers and methods of separating charged particles
US8278634B2 (en) 2009-06-08 2012-10-02 Axcelis Technologies, Inc. System and method for ion implantation with improved productivity and uniformity
EP2494666A4 (en) 2009-10-31 2016-01-27 Glenn Lane Family Ltd Liability Ltd Partnership WIRELESS POWER TRANSMISSION THROUGH CONCENTRIC LASER PRODUCTS PLASMA CHANNELS IN THE ATMOSPHERE
US8604443B2 (en) 2009-11-13 2013-12-10 Varian Semiconductor Equipment Associates, Inc. System and method for manipulating an ion beam
EP2553686A4 (en) 2010-03-29 2015-01-21 Glenn Lane Family Ltd Liability Ltd Partnership SPATIAL SEGREGATION OF PLASMA COMPONENTS
US8436318B2 (en) 2010-04-05 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Apparatus for controlling the temperature of an RF ion source window
US8604418B2 (en) 2010-04-06 2013-12-10 Axcelis Technologies, Inc. In-vacuum beam defining aperture cleaning for particle reduction
US8471476B2 (en) 2010-10-08 2013-06-25 Varian Semiconductor Equipment Associates, Inc. Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement
US8324592B2 (en) 2010-11-02 2012-12-04 Twin Creeks Technologies, Inc. Ion source and a method of generating an ion beam using an ion source
US8669517B2 (en) 2011-05-24 2014-03-11 Axcelis Technologies, Inc. Mass analysis variable exit aperture
US8637838B2 (en) 2011-12-13 2014-01-28 Axcelis Technologies, Inc. System and method for ion implantation with improved productivity and uniformity
CN202730223U (zh) * 2012-08-03 2013-02-13 晋谱(福建)光电科技有限公司 离子溅射镀膜装置
JP5959413B2 (ja) * 2012-11-13 2016-08-02 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US9496117B2 (en) * 2014-01-20 2016-11-15 Varian Semiconductor Equipment Associates, Inc. Two-dimensional mass resolving slit mechanism for semiconductor processing systems
US9953801B1 (en) * 2016-11-29 2018-04-24 Axcelis Technologies, Inc. Two-axis variable width mass resolving aperture with fast acting shutter motion

Similar Documents

Publication Publication Date Title
JP2016520951A5 (enExample)
CN104011831B (zh) 使用飞行时间中无场区的一阶和二阶聚焦
GB2547120A (en) A multi-reflecting time-of-flight analyzer
RU2013149761A (ru) Устройство ортогонального ввода ионов во времяпролетный масс-спектрометр
GB2560474A8 (en) Imaging mass spectrometer
EP2819144A3 (en) Axial magnetic field ion source and related ionization methods
WO2015043769A8 (en) Charged particle beam system and method of operating the same
WO2014145898A3 (en) Adjustable mass resolving aperture
WO2009001909A3 (en) A multi-reflecting ion optical device
JP2011507205A5 (enExample)
WO2013057505A3 (en) Mass analyser, mass spectrometer and associated methods
GB2574558A (en) Multi-reflecting time-of-flight mass spectrometer
JP2010512620A5 (enExample)
EP2391190A3 (en) Accelerator and cyclotron
JP2015092815A5 (enExample)
JP2013029569A5 (enExample)
WO2015124372A3 (en) Lithographic system
EP3804475A4 (en) ION BEAM TARGET ARRANGEMENTS FOR NEUTRON GENERATION
CN105225918B (zh) 用于飞行时间质谱中离子束整形的静电透镜
JP2015014678A5 (enExample)
TW200733819A (en) Technique for shaping a ribbon-shaped ion beam
EP3106716A3 (en) Manipulation apparatus
JP2017016903A5 (enExample)
GB2574709B (en) Desorption beam control with virtual axis tracking in time-of-flight mass spectrometers
WO2015200649A3 (en) Electron energy loss spectrometer