KR20150020120A - 다중―포트 밸브 어셈블리를 갖는 플라즈마 프로세싱 디바이스 - Google Patents

다중―포트 밸브 어셈블리를 갖는 플라즈마 프로세싱 디바이스 Download PDF

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Publication number
KR20150020120A
KR20150020120A KR20140105086A KR20140105086A KR20150020120A KR 20150020120 A KR20150020120 A KR 20150020120A KR 20140105086 A KR20140105086 A KR 20140105086A KR 20140105086 A KR20140105086 A KR 20140105086A KR 20150020120 A KR20150020120 A KR 20150020120A
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KR
South Korea
Prior art keywords
sealing plate
plasma processing
sealing
processing device
valve assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR20140105086A
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English (en)
Korean (ko)
Inventor
마이클 씨. 켈로그
다니엘 에이. 브라운
레너드 제이. 샤프리스
엘렌 케이. 로네
Original Assignee
램 리써치 코포레이션
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Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20150020120A publication Critical patent/KR20150020120A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Multiple-Way Valves (AREA)
  • Details Of Valves (AREA)
  • Sliding Valves (AREA)
KR20140105086A 2013-08-13 2014-08-13 다중―포트 밸브 어셈블리를 갖는 플라즈마 프로세싱 디바이스 Ceased KR20150020120A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/965,796 2013-08-13
US13/965,796 US20150047785A1 (en) 2013-08-13 2013-08-13 Plasma Processing Devices Having Multi-Port Valve Assemblies

Publications (1)

Publication Number Publication Date
KR20150020120A true KR20150020120A (ko) 2015-02-25

Family

ID=52465964

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20140105086A Ceased KR20150020120A (ko) 2013-08-13 2014-08-13 다중―포트 밸브 어셈블리를 갖는 플라즈마 프로세싱 디바이스

Country Status (4)

Country Link
US (1) US20150047785A1 (enExample)
JP (1) JP6508895B2 (enExample)
KR (1) KR20150020120A (enExample)
TW (1) TWI659444B (enExample)

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* Cited by examiner, † Cited by third party
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US10049862B2 (en) * 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
CN113574649B (zh) * 2019-03-15 2025-04-15 朗姆研究公司 用于蚀刻反应器的涡轮分子泵和阴极组件
US11199267B2 (en) * 2019-08-16 2021-12-14 Applied Materials, Inc. Symmetric flow valve for higher flow conductance
JP2021039880A (ja) 2019-09-03 2021-03-11 株式会社日立ハイテク 荷電粒子線装置
US20230162950A1 (en) * 2021-11-22 2023-05-25 Applied Materials, Inc. Plasma chamber with a multiphase rotating gas cross-flow and peripheral conductance control rings

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198261A (en) * 1981-05-29 1982-12-04 Fuji Xerox Co Ltd Vapor depositing device
US4516606A (en) * 1983-02-16 1985-05-14 Exxon Research And Engineering Co. Variable orifice valve assembly
JPH0751756B2 (ja) * 1985-11-09 1995-06-05 日電アネルバ株式会社 集塵装置付薄膜処理装置
US5000225A (en) * 1989-11-17 1991-03-19 Applied Materials, Inc. Low profile, combination throttle/gate valve for a multi-pump chamber
JPH043927A (ja) * 1990-04-20 1992-01-08 Mitsubishi Electric Corp 半導体処理装置
JPH07106307A (ja) * 1993-10-07 1995-04-21 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
JP2978974B2 (ja) * 1996-02-01 1999-11-15 キヤノン販売株式会社 プラズマ処理装置
JPH10321604A (ja) * 1997-05-22 1998-12-04 Nec Kyushu Ltd プラズマ処理装置
JPH1154496A (ja) * 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
US5997589A (en) * 1998-07-09 1999-12-07 Winbond Electronics Corp. Adjustment pumping plate design for the chamber of semiconductor equipment
JP3579278B2 (ja) * 1999-01-26 2004-10-20 東京エレクトロン株式会社 縦型熱処理装置及びシール装置
JP4330703B2 (ja) * 1999-06-18 2009-09-16 東京エレクトロン株式会社 搬送モジュール及びクラスターシステム
US6261408B1 (en) * 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
IT1314504B1 (it) * 2000-03-02 2002-12-18 Cozzani Mario S R L Valvola per il controllo di flussi di grande sezione, in particolareper compressori o simili.
US6531069B1 (en) * 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections
US20060162656A1 (en) * 2002-07-31 2006-07-27 Tokyo Electron Limited Reduced volume, high conductance process chamber
TWI261313B (en) * 2005-07-29 2006-09-01 Ind Tech Res Inst A method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof
JP4847136B2 (ja) * 2006-01-17 2011-12-28 株式会社アルバック 真空処理装置
WO2008038940A1 (en) * 2006-09-27 2008-04-03 Ats Engineering Co., Ltd. Gate valve
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US20090325386A1 (en) * 2008-06-02 2009-12-31 Mattson Technology, Inc. Process and System For Varying the Exposure to a Chemical Ambient in a Process Chamber
JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
US20100075488A1 (en) * 2008-09-19 2010-03-25 Applied Materials, Inc. Cvd reactor with multiple processing levels and dual-axis motorized lift mechanism
JP2010186891A (ja) * 2009-02-12 2010-08-26 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理装置のメンテナンス方法及びプラズマ処理装置の組み立て方法
WO2012089732A1 (en) * 2010-12-29 2012-07-05 Oc Oerlikon Balzers Ag Vacuum treatment apparatus and a method for manufacturing

Also Published As

Publication number Publication date
JP6508895B2 (ja) 2019-05-08
JP2015043420A (ja) 2015-03-05
TWI659444B (zh) 2019-05-11
US20150047785A1 (en) 2015-02-19
TW201521076A (zh) 2015-06-01

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