KR20140104358A - METAL THIN FILM AND Mo ALLOY SPUTTERING TARGET MATERIAL FOR FORMING METAL THIN FILM - Google Patents

Abstract

Provided are a metallic thin film for an electronic part including a molybdenum (Mo) alloy and a Mo alloy sputtering target material for forming the metallic thin film, in which moisture resistance and oxidation resistance can be improved, and a low electric resistance can be maintained even if a heating process is performed when the metallic thin film serving as a base layer and a cap layer is formed on a main wire layer having low resistance and formed of aluminum (Al) or copper (Cu). The Mo alloy sputtering target material is used to form a metallic thin film including at least one selected from an element group A consisting of Cr, Zr and, Ta and having 3 atom% or more in content sum, 10-45 atom% of Ni, the sum of the group A and Ni being contained at 50 atom% or less, a remainder consisting of Mo, and other inevitable impurities.

Description

METAL THIN FILM AND MO ALLOY SPUTTERING TARGET MATERIAL FOR FORMING METAL THIN FILM BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

The present invention relates to a metal thin film for use in electronic parts requiring moisture resistance and oxidation resistance and a Mo alloy sputtering target material for forming the metal thin film.

(Flat panel display, hereinafter referred to as " flat panel display ") such as a liquid crystal display (hereinafter referred to as LCD) for forming a thin film device on a glass substrate, an electrophoretic display used for a plasma display panel FPD), thin film electronic components such as various semiconductor devices, thin film sensors, and magnetic heads require a wiring film with low electrical resistance. For example, FPDs such as LCDs, PDPs, organic EL displays and the like are required to have a low resistance in their wiring films in conjunction with large screen, high precision, and high-speed response. Recently, new products such as a flexible FPD using a touch panel or a resin substrate that adds operability to the FPD have been developed.

In recent years, a Si semiconductor film is used as a wiring film of a thin film transistor (TFT) used as a driving element of an FPD. Al, which is the main wiring film, is directly brought into contact with Si, which is thermally diffused by the heating process during TFT fabrication, thereby deteriorating TFT characteristics. As a result, a laminated wiring film in which a metal thin film such as a pure Mo or Mo alloy having excellent heat resistance between Al and Si is formed as a barrier film is used.

In addition, indium-tin oxide (hereinafter referred to as ITO), which is a transparent conductive film, is generally used for a pixel electrode extending from a TFT or a position detection electrode of a touch panel used for a portable terminal or a tablet PC. Even in this case, Al, which is the main wiring film, may generate oxide at the interface when it comes into contact with ITO, which may deteriorate electrical contact properties. For this reason, it is necessary to form a thin metal film of pure Mo or Mo alloy between Al and ITO in the wiring film to ensure the contact property with ITO.

Further, application of a transparent semiconductor film using an oxide capable of realizing a higher speed driving from the amorphous Si semiconductor up to now has been studied, and a laminated wiring film using Al, pure Mo, Mo alloy or the like is also studied for the lamination film of these oxide semiconductors .

Therefore, the Applicant has proposed a Mo alloy film which is excellent in corrosion resistance, heat resistance and adhesion to a substrate, and has a low resistance of 3 to 50 atomic% of V or Nb added thereto as means for improving the properties of pure Mo (See, for example, Patent Document 1).

Further, in recent years, a wiring film of a thin film transistor (TFT) used as a driving element of an FPD is required to have a low resistance, and a copper having a lower resistance than Al is used as a main wiring film. In addition, enlargement of the screen of a touch panel substrate which gives direct operability while viewing the screen of the FPD is proceeding, and studies for using Cu as a main wiring material for lowering the resistance are underway.

As described above, a Si semiconductor is used for the TFT, and Cu, which is the main wiring film, is directly contacted with Si, and is thermally diffused by the heating process during TFT manufacturing, deteriorating TFT characteristics. As a result, a laminated wiring film in which a thin film of metal such as pure Mo or Mo alloy, which has excellent heat resistance between Cu and Si, is formed as a barrier film is used.

Further, ITO (indium-tin oxide), which is a transparent conductive film, is generally used for a pixel electrode extending from a TFT or a position detection electrode of a touch panel used for a portable terminal or a tablet PC. Cu can obtain a contact property with ITO. However, since adhesion with a substrate is low, it is necessary to form a laminated wiring film in which Cu is coated with a metal thin film such as Mo or Mo alloy in order to secure adhesion.

Further, application of a transparent semiconductor film using an oxide capable of realizing a higher-speed response has been studied from the amorphous Si semiconductor up to now, and lamination of a metal thin film of Cu and a pure Mo or Mo alloy is also performed on the wiring film of these oxide semiconductors Wiring films are being studied.

The applicant of the present application has found that by laminating Cu or Ag having low adhesiveness with glass or the like and Mo alloy containing V and / or Nb as a Mo main body, corrosion resistance and heat resistance can be improved while maintaining a low electrical resistance value of Cu or Ag, (For example, refer to Patent Document 2).

Japanese Patent Application Laid-Open No. 2002-190212 Japanese Patent Application Laid-Open No. 2004-140319

The Mo-V and Mo-Nb alloys proposed in Patent Document 1 described above are superior to pure Mo in corrosion resistance, heat resistance and adhesion to substrates, and thus are widely used for FPD applications formed on glass substrates.

However, in the case of manufacturing an FPD, after forming a laminated wiring film on a substrate, it may be left in the air for a long time when moving to the next step. Further, in order to improve the convenience, in a lightweight and flexible FPD using a resin film, a resin film has moisture permeability as compared with conventional glass substrates, and therefore, the metal thin film is required to have higher moisture resistance.

Further, when the signal line cable is attached to the terminal portion of the FPD or the like, the metal thin film is required to be improved in oxidation resistance because it is sometimes heated in the air. In addition, in a semiconductor film using an oxide, a heat treatment at a high temperature of 350 DEG C or higher may be performed after formation of an oxygen-containing atmosphere or a protective film containing oxygen, in order to improve or stabilize the characteristics. Thus, there is a growing demand for improvement in oxidation resistance so that the laminated wiring film using the metal thin film as the cap film on the main wiring film can maintain stable characteristics even after these heating processes.

According to the study of the present inventors, it has been found that the Mo-V, Mo-Nb alloy or the like and the metal thin film of pure Mo have insufficient moisture resistance and oxidation resistance in the above-described environment and are discolored during the manufacturing process of the FPD It is confirmed that there is a possibility of occurrence.

Further, according to the study of the present inventors, since Cu has a lower adhesion, moisture resistance and oxidation resistance than Al, it is necessary to form a base film for ensuring adhesion with the substrate or a metal thin film serving as a cap film for protecting the surface of Cu . Mo-V, Mo-Nb alloy or the like as described above is not sufficient in moisture resistance and oxidation resistance and is discolored when formed into a cap film of Cu in the manufacturing process of FPD and oxygen permeates and the electrical resistance of Cu There may be a problem that the value greatly increases. The discoloration of the cap film deteriorates the electrical contactability, leading to a reduction in the reliability of the electronic parts.

In addition, the heating temperature during the TFT manufacturing process tends to increase for the large screen of FPD or high-speed driving. When the heating process is performed at a higher temperature, the alloy element contained in the metal thin film as the cap film is changed to Al It is confirmed that there is a case where the electrical resistance value increases due to the thermal diffusion to the wiring film.

SUMMARY OF THE INVENTION An object of the present invention is to improve the moisture resistance and oxidation resistance and to maintain a low electrical resistance value even after a heating process when a metal thin film is formed as a base film or a cap film in a low resistance Al or Cu main wiring film And a Mo alloy sputtering target material for forming the metal thin film.

In view of the above problems, the present inventors have devoted themselves to the optimization of elements newly added to Mo. As a result, it has been found that moisture resistance and oxidation resistance are improved by adding at least one element selected from the element group A of a specific amount of Ni and a specified amount of Cr, Zr, and Ta to Mo. Further, the present inventors have found that when a metal film is used as a base film or a cap film of a low resistance Al or Cu main wiring film, a low electrical resistance value can be maintained even through a high heating process.

That is, the present invention provides a non-aqueous electrolyte secondary battery comprising a total of at least 3 atomic%, at least one element selected from the group consisting of Cr, Zr and Ta, 10 to 45 atomic% of Ni, Atomic% or less, and the balance of Mo and inevitable impurities.

When the element selected from the above-mentioned element group A is Cr and / or Zr, the addition amount thereof is preferably 3 to 20 atomic% in total.

When the element selected from the element group A is Ta, the addition amount thereof is preferably 3 to 15 atomic%.

In addition, the present invention provides a non-aqueous electrolyte secondary battery comprising a total of at least 3 atomic%, at least one element selected from the group consisting of Cr, Zr and Ta, 10 to 45 atomic% of Ni, Atomic% or less, and the remainder being Mo and inevitable impurities. The present invention relates to a Mo alloy sputtering target material for forming a thin metal film.

When the element selected from the above-mentioned element group A is Cr and / or Zr, the addition amount thereof is preferably 3 to 20 atomic% in total.

When the element selected from the element group A is Ta, the addition amount thereof is preferably 3 to 15 atomic%.

The metal thin film of the present invention is superior in moisture resistance and oxidation resistance as compared with the conventional metal thin film. In addition, even in the heating step when the main wiring film is laminated with Al or Cu, increase in electric resistance value can be suppressed and a low electric resistance value can be maintained. This has the advantage that it can contribute to the stable production and reliability improvement of electronic components by using various underlying electronic components, for example, a base film or a cap film formed on a resin substrate, and is a technique useful for manufacturing electronic components . Particularly, a metal thin film is useful for a flexible FPD using a touch panel or a resin substrate. These products are particularly important in moisture resistance and oxidation resistance.

1 is a schematic sectional view showing an application example of a metal thin film for an electronic part of the present invention.

An application example of the metal thin film of the present invention is shown in Fig. The metal thin film of the present invention is formed on the substrate 1, for example, and can be used for the base film 2 and the cap film 4 of the main conductive film 3. [ Although the metal thin films 2 and 4 are formed on both surfaces of the main conductive film 3 in Fig. 1, only one of the under film 2 and the cap film 4 may be covered, and it can be appropriately selected. When only one side of the main conductive film is covered with the metal thin film of the present invention, the other side of the main conductive film 3 may be covered with a metal thin film having a composition different from that of the present invention, depending on the use of the electronic component.

INDUSTRIAL APPLICABILITY The present invention can provide a new metal thin film which can maintain a low electrical resistance value in a heating process for improving moisture resistance and oxidation resistance and for example, in the lamination of Cu or Al to form a main conductive film. It is characterized in that a total of at least 3 atomic%, at least 10 atomic% of Ni, and at least one element selected from the element group A of Cr, Zr, and Ta, In a total amount of 50 atomic% or less. Hereinafter, the metal thin film of the present invention will be described in detail. In the following description, " moisture resistance " means that it is difficult to change the electric resistance value of the wiring film under a high temperature and high humidity environment. The " oxidation resistance " means difficulty in deteriorating the electrical contact property under a high temperature environment, and can be confirmed by discoloration of the wiring film, and can be quantitatively evaluated by, for example, reflectance.

In the metal thin film of the present invention, Ni is added to the Mo alloy for the purpose of improving oxidation resistance. When pure Mo is heated in the atmosphere, the surface of the metal thin film is easily oxidized and the surface of the metal thin film is discolored, and the electrical contact property is deteriorated. The metal thin film of the present invention can improve oxidation resistance by adding a specific amount of Ni to Mo. The effect becomes remarkable when the addition amount of Ni is 10 atomic% or more.

Cu, which is used as the main conductive film, is an element that is easily oxidized when heated in the atmosphere. When the metal thin film of the present invention is used as the cap film of the main conductive film containing Cu, the addition amount of Ni is preferably 20 atomic% or more. Thus, the metal thin film of the present invention can ensure sufficient oxidation resistance and a low electrical resistance value to a high temperature of 300 DEG C or higher.

On the other hand, Al used as the main conductive film is an element excellent in oxidation resistance and moisture resistance as compared with Cu because it forms a thin passive film on its surface to protect the inside when exposed to the atmosphere. However, as described above, in order to improve the contact properties of ITO and the like, a Mo-based alloy cap film is required. Further, since Ni is an element which is easily thermally diffused to Al, the amount of Ni contained in the Mo alloy needs to be minimized so as to improve the oxidation resistance.

In the case where the metal thin film of the present invention is used as the cap film of the main conductive film containing Al, if the addition amount of Ni exceeds 25 at%, in the heating process at about 350 캜 when producing electronic parts such as FPD, Ni contained in the cap film is diffused into Al of the main conductive film and it becomes difficult to maintain a low electric resistance value. Therefore, when the metal thin film of the present invention is used as the cap film of the main conductive film containing Al, the addition amount of Ni is preferably 25 at% or less.

According to the study by the present inventors, it has been confirmed that Mo is low in moisture resistance, and that the electric resistance value increases in a high temperature and high humidity environment. The metal thin film of the present invention preferably contains at least 3 atomic% of a total of at least one element selected from the element group A of Cr, Zr and Ta, Is 50 atomic% or less. This is because if the total amount of addition of Ni, Cr, Zr and Ta exceeds 50 at%, the electric resistance increases when heated to a high temperature of 350 캜 or higher. The reason for this is thought to be that Ni, Cr and the like are elements which are more likely to be thermally diffused into Cu than Mo.

The element group A of Cr, Zr and Ta is a metal having a property of being more resistant to corrosion than Mo and easy to be bonded to oxygen or nitrogen and has an effect of protecting the inside of the metal thin film by forming a passivation film on the surface in a high temperature and high humidity atmosphere . Therefore, in the metal thin film of the present invention, by adding Cr, Zr, and Ta in a specific amount to Mo, moisture resistance can be greatly improved. This effect is clarified to be 3 atomic% or more in total, and becomes more remarkable at 5 atomic% or more.

On the other hand, if the addition amount of the element group A is increased, the passivation film is formed on the metal thin film, and the corrosion resistance is excessively improved. As a result, the etching rate when the metal thin film is processed into an electrode such as an FPD or wiring is lowered, so that residue is formed on the substrate or etching becomes impossible. The addition amount thereof differs depending on the element. When Cr and Zr are added, the total amount is preferably 20 atomic% or less, and in the case of adding Ta, it is preferably 15 atomic% or less.

When the metal thin film of the present invention is used for the cap film of the main conductive film, it is preferable to set the film thickness to 20 to 100 nm in order to stably obtain low electrical resistance, moisture resistance and oxidation resistance. When the thickness of the metal thin film is less than 20 nm, the continuity of the metal thin film is lowered, and the above characteristics may not be sufficiently obtained. On the other hand, if the film thickness of the metal thin film exceeds 100 nm, the electrical resistance value of the metal thin film itself becomes high.

Particularly, in the case where the main conductive film is Cu, it is more preferable to set the thickness of the metal thin film to 30 nm or more in order to suppress the oxidation. When the main conductive film is Al, the film thickness of the metal thin film is preferably thin, more preferably 20 to 70 nm, in order to suppress diffusion of atoms during heating.

In order to form the metal thin film of the present invention, the sputtering method using the sputtering target is optimum. A Mo alloy sputtering target having the same composition as the composition of the metal thin film or a sputtering target that is a Mo-Cr alloy, a Mo-Zr alloy, or a Mo-Ta alloy by co- And the like can be applied. It is most preferable to form the sputtering target by using the Mo alloy sputtering target having the same composition as that of the metal thin film in terms of easiness of setting the sputtering condition and easy obtaining of the metal thin film of the desired composition.

The Mo alloy sputtering target material for forming a metal thin film of the present invention contains 10 to 45 atomic% of Ni, 3 atomic% or more of at least one element selected from the group consisting of elements of Cr, Zr and Ta, Or less, and the remaining amount includes Mo and inevitable impurities.

When Cr and / or Zr is selected as the element group A, the addition amount thereof is preferably 3 to 20 atomic% in total. When Ta is selected as the element group A, the addition amount is preferably 3 to 15 atomic%.

In the Mo alloy sputtering target material for forming a metal thin film of the present invention, in order to ensure oxidation resistance and moisture resistance at the time of forming a metal thin film, a Mo element other than Mo, Ni, Cr, Zr, It is preferable that the content of the inevitable impurities in the film is small. It may contain inevitable impurities such as oxygen, nitrogen or carbon, transition metals Fe, Cu, semimetal Al, Si or the like within a range not impairing the action of the present invention. For example, oxygen and nitrogen of the gas components are respectively not more than 1000 mass ppm, carbon is not more than 200 mass ppm, Fe, Cu is not more than 200 mass ppm, Al and Si are not more than 100 mass ppm, It is preferably 99.9 mass% or more.

As a method of producing the sputtering target material for forming a metal thin film for an electronic part of the present invention, for example, powder sintering method is applicable. As the powder sintering method, for example, a mixed powder obtained by mixing a plurality of alloy powders or pure metal powders so as to have a final composition of the present invention can be used as a raw material powder. As the sintering method of the raw material powder, it is possible to use pressure sintering such as hot isostatic pressing, hot press, discharge plasma sintering, extrusion press sintering and the like.

[Example 1]

First, an Mo powder having an average particle diameter of 6 μm, an Ni powder having an average particle diameter of 100 μm, a Cr powder having an average particle diameter of 150 μm, a Ta powder having an average particle diameter of 120 μm, and an Nb powder having an average particle diameter of 85 μm were prepared, The mixture was mixed so as to have a predetermined composition shown in Table 1, filled in a can of softened steel, and degassed by heating while heating to remove the gas in the can, followed by sealing. Subsequently, the sealed can was placed in a hot isostatic pressing apparatus and sintered under conditions of 800 ° C and 120 MPa for 5 hours, and then machined to produce a sputtering target material having a diameter of 100 mm and a thickness of 5 mm.

The Ni-Zr alloy sputtering target material for producing a metal thin film of a Mo-Ni-Zr alloy as a comparative example to be described later was produced by a vacuum melting-casting method and machined to have a diameter of 100 mm, A sputtering target material having a thickness of 5 mm was produced.

Each of the sputtering target materials obtained above was soldered to a copper backing plate and mounted on a sputtering apparatus. As the sputtering apparatus, SPF-440H manufactured by Canon Inc., Annera K.K. was used.

200 nm of a metal thin film of each composition shown in Table 1 was formed on a glass substrate of 25 mm x 50 mm to obtain a sample. Further, the metal thin film of the Mo-Ni-Zr alloy was formed by the co-sputtering method in which the target material of the Mo-Ni alloy and the Ni-Zr alloy prepared above was simultaneously sputtered. The composition of the obtained metal thin film was analyzed by ICP (inductively coupled plasma emission spectrometer) of ICPV-1017 manufactured by Shimadzu Corporation.

The oxidation resistance was evaluated by measuring the changes in the reflectance after each of the samples obtained above was heated in air at 250 캜, 300 캜 and 350 캜 for 1 hour. For the measurement of the reflectance, the reflection characteristic of the visible light region was measured using a spectroscopic colorimeter CM-2500d manufactured by Konica Minolta Co., Ltd. The evaluation of the etchability was carried out by immersing each of the samples obtained above in a cantilever for Al for 10 minutes manufactured by Kanto Kagaku Kabushiki Kaisha to evaluate the presence of a residue of the metal thin film on the substrate. Water that has been etched without any film residue or residue on the substrate is referred to as?, And water that has not been etched remains as the film. In addition, when the film is etched but there is a film residue or residue, the situation is indicated. The results are shown in Table 1.

As shown in Table 1, when the metal thin film containing pure Mo or Mo alloy is heated in the air or left in a high-temperature and high-humidity atmosphere, the reflectance tends to decrease, and there is a large difference Confirmed.

The reflectance of a metal thin film including Mo-10 atomic% Nb and Mo-17 atomic% Ta alloy significantly decreases to 300 deg. C when heated in the atmosphere and becomes an oxide at 350 deg. did. Further, it was confirmed that when the metal thin film containing Mo-Ni alloy was left in a high-temperature and high-humidity atmosphere, the reflectance greatly decreased when left for 100 hours, and the moisture resistance was low.

On the other hand, the metal thin film containing the Mo alloy of the present invention in which a specific range of Ni and Cr, Zr, and Ta is added is low in the reflectance even when it is left in an atmospheric heating or high temperature and high humidity atmosphere, And it was confirmed that both of them were combined.

[Example 2]

Assuming the film structure shown in Fig. 1, a base film having a composition shown in Table 2 was formed on a glass substrate having a size of 25 mm x 50 mm, and a Cu film as a main conductive film and a cap film on its top surface were formed on the top surface thereof, Was formed using the same sputtering apparatus as in Example 1 to obtain a sample of the laminated wiring film. In addition, the Cu target material was cut out from a sheet of oxygen-free copper of Hitachi Densen Kabushiki Kaisha.

The oxidation resistance was evaluated by measuring the changes in the reflectance after each of the samples obtained above was heated in air at 250 캜, 300 캜 and 350 캜 for 1 hour. For the measurement of the reflectance, the reflection characteristic of the visible light region was measured using a spectroscopic colorimeter CM-2500d manufactured by Konica Minolta Co., Ltd. In addition, the moisture resistance was evaluated by measuring changes in electrical resistance values when each of the samples obtained above was allowed to stand for 100 hours, 200 hours, and 300 hours in a high-temperature and high-humidity atmosphere of 85 ° C × 85%. The electrical resistance was measured using a 4-terminal thin film resistivity meter MCP-T400 manufactured by Kabushiki Kaisha Diamond Instruments. The evaluation of the etching properties was carried out by immersing each of the samples obtained above in Cu etchant Cu for 10 minutes manufactured by Kanto Kagaku KK to evaluate the presence of a residue of the metal thin film on the substrate. Water which was etched without any film residue or residue on the substrate was indicated by o, and remaining water which was not etched was indicated by x. The results are shown in Table 2.

As shown in Table 2, in the case of the Cu film as the main conductive film, when it was heated in air at 250 ° C or more, it was oxidized and the reflectance was greatly lowered and the electrical resistance value could not be measured. In addition, the laminated wiring films of Mo alloy and Cu, which are metal thin films as comparative examples, are heated in the atmosphere, the reflectance decreases and the electric resistance value tends to increase. In particular, the reflectance was significantly lowered at 350 ° C in the atmosphere with pure Mo, Mo-10 atomic% Nb, and Mo-17 atomic% Ta. Further, although the electrical resistance value can be kept low up to 250 캜, it largely increases at 350 캜, and it is considered that oxygen permeates through the cap film and the Cu film of the main conductive film is oxidized. Further, in the laminated wiring film using the metal thin film of the Mo-Ni alloy as the comparative example, the decrease of the reflectance is suppressed when the addition amount of Ni is increased, the electrical resistance value can be maintained to a higher temperature and the oxidation resistance is improved Can be seen.

Further, in a high-temperature and high-humidity atmosphere, the reflectance decreases and the electrical resistance value increases with the increase in the time of leaving the Cu layer alone. When it was left over 200 hours, the electric resistance value could not be measured. The Mo-10 Nb and Mo-17 Ta of the comparative examples suppress the lowering of the reflectance, the increase of the electric resistance value is suppressed, and the moisture resistance is improved. In addition, as in the case of pure Mo, the reflectance is greatly lowered by 100 hours of standing time, the electric resistance value is increased, and the tendency becomes remarkable when the addition amount of Ni is increased, and moisture resistance is low.

On the contrary, when the metal thin film containing Mo in the specific range of Ni and Cr alloy, Mo alloy of Cr, Zr and Ta is used for the under film and the cap film in the atmosphere of the present invention, It was confirmed that the oxidation resistance and the moisture resistance were greatly improved by decreasing the reflectance and increasing the electric resistance value. In addition, the addition of Cr, Zr and Ta has an effect on moisture resistance, but it can be seen that when Cr is 20 atomic% or more and Ta is more than 15 atomic%, etching becomes impossible.

As described above, it was confirmed that the metal thin film of the present invention can remarkably improve the oxidation resistance and moisture resistance by forming the underlying film or the cap film of the main conductive film containing Cu, and it is possible to maintain a low electric resistance value.

[Example 3]

Assuming the film structure shown in Fig. 1, a base film having a composition shown in Table 3 was formed on a glass substrate having a size of 25 mm x 50 mm, and an Al film as a main conductive film and a cap film on its upper surface were formed on the upper surface thereof, Was formed using the same sputtering apparatus as in Example 1 to obtain a sample of the laminated wiring film. The Al target material was purchased from Sumitomo Mogaragaku Co., Ltd.

The evaluation of oxidation resistance and moisture resistance was carried out in the same manner as in Example 2. The evaluation of the etching property was carried out by applying a photoresist only to an area of half of the sample obtained above, drying it, and immersing it in a mixed acid etchant for Al manufactured by Kanto Kagaku Kabushiki Kaisha to etch the uncoated portion. Thereafter, the substrate was cleaned with pure water, dried, and the vicinity of the boundary between the dissolving portion and the unmelted portion coated with the resist was observed with an optical microscope. Water that has been etched without any film residue or residue on the substrate is referred to as?, And water that has not been etched remains as the film. In addition, when the film is etched but there is a film residue or residue, the situation is indicated. The results are shown in Table 3.

As shown in Table 3, as in the results of Examples 1 and 2, Mo is inferior in oxidation resistance and moisture resistance, has low oxidation resistance in Mo-Nb alloy and poor in moisture resistance in Mo-Ni alloy Able to know.

On the contrary, when the metal thin film containing Mo alloy of the present invention in which a specific range of Ni and Cr, Zr and Ta is added is used for the under film and the cap film, the oxidation resistance and the moisture resistance can be remarkably improved have.

As described above, it was confirmed that the metal thin film of the present invention can remarkably improve oxidation resistance and moisture resistance and can maintain a low electrical resistance value by using a base film or a cap film of a main conductive film containing Al.

1: substrate
2: metal thin film (underlying film)
3: leading diaphragm
4: metal thin film (cap film)

Claims (6)

At least 3 atomic% of at least one element selected from the group consisting of Cr, Zr and Ta, 10 to 45 atomic% of Ni, and a total of 50 atomic% or less of the element selected from the element group A and Ni , And the remaining portion contains Mo and inevitable impurities. The method according to claim 1,
Wherein the element selected from the element group A is at least one element selected from the group consisting of Cr and Zr, and the additive amount is 3 to 20 atomic% in total. The method according to claim 1,
Wherein the element selected from the element group A is Ta and the amount of the element is 3 to 15 atomic%. At least 3 atomic% of at least one element selected from the group consisting of Cr, Zr and Ta, 10 to 45 atomic% of Ni, and a total of 50 atomic% or less of the element selected from the element group A and Ni , And the remainder portion contains Mo and inevitable impurities. The Mo alloy sputtering target material for forming a metal thin film according to claim 1, 5. The method of claim 4,
Wherein the element selected from the element group A is at least one element selected from the group consisting of Cr and Zr, and the amount of the element is 3 to 20 atomic% in total. 5. The method of claim 4,
Wherein the element selected from the element group A is Ta and the amount of the element is 3 to 15 atomic%.

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