KR20140099266A - 실리콘 단결정의 평가방법 및 실리콘 단결정의 제조방법 - Google Patents

실리콘 단결정의 평가방법 및 실리콘 단결정의 제조방법 Download PDF

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KR20140099266A
KR20140099266A KR20147015202A KR20147015202A KR20140099266A KR 20140099266 A KR20140099266 A KR 20140099266A KR 20147015202 A KR20147015202 A KR 20147015202A KR 20147015202 A KR20147015202 A KR 20147015202A KR 20140099266 A KR20140099266 A KR 20140099266A
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KR
South Korea
Prior art keywords
single crystal
silicon single
oxygen concentration
resistivity
oxygen
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English (en)
Korean (ko)
Inventor
료지 호시
히로유키 카마다
스구루 마츠모토
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신에쯔 한도타이 가부시키가이샤
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Publication of KR20140099266A publication Critical patent/KR20140099266A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR20147015202A 2011-12-06 2012-11-12 실리콘 단결정의 평가방법 및 실리콘 단결정의 제조방법 Withdrawn KR20140099266A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011266877A JP5772553B2 (ja) 2011-12-06 2011-12-06 シリコン単結晶の評価方法およびシリコン単結晶の製造方法
JPJP-P-2011-266877 2011-12-06
PCT/JP2012/007232 WO2013084410A1 (ja) 2011-12-06 2012-11-12 シリコン単結晶の評価方法およびシリコン単結晶の製造方法

Publications (1)

Publication Number Publication Date
KR20140099266A true KR20140099266A (ko) 2014-08-11

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Family Applications (1)

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KR20147015202A Withdrawn KR20140099266A (ko) 2011-12-06 2012-11-12 실리콘 단결정의 평가방법 및 실리콘 단결정의 제조방법

Country Status (5)

Country Link
US (1) US9111883B2 (https=)
JP (1) JP5772553B2 (https=)
KR (1) KR20140099266A (https=)
DE (1) DE112012004731T5 (https=)
WO (1) WO2013084410A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2997096B1 (fr) * 2012-10-23 2014-11-28 Commissariat Energie Atomique Procede de formation d'un lingot en silicium de resistivite uniforme
JP6036670B2 (ja) * 2013-12-10 2016-11-30 信越半導体株式会社 シリコン単結晶基板の欠陥濃度評価方法
US20150294868A1 (en) * 2014-04-15 2015-10-15 Infineon Technologies Ag Method of Manufacturing Semiconductor Devices Containing Chalcogen Atoms
CN106463403B (zh) * 2014-06-02 2020-05-05 胜高股份有限公司 硅晶片及其制造方法
FR3045074B1 (fr) * 2015-12-14 2018-01-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede pour ajuster la resistivite d'un lingot semi-conducteur lors de sa fabrication
FR3059821B1 (fr) * 2016-12-05 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mesure de temperature
JP6669133B2 (ja) * 2017-06-23 2020-03-18 株式会社Sumco シリコンウェーハのサーマルドナー生成挙動予測方法、シリコンウェーハの評価方法およびシリコンウェーハの製造方法
JP2019019030A (ja) * 2017-07-18 2019-02-07 信越半導体株式会社 シリコン単結晶の評価方法およびシリコン単結晶の製造方法
JP2019094224A (ja) 2017-11-21 2019-06-20 信越半導体株式会社 シリコン単結晶の育成方法
JP6844561B2 (ja) * 2018-03-09 2021-03-17 信越半導体株式会社 酸素濃度評価方法
JP7582070B2 (ja) * 2021-05-25 2024-11-13 株式会社Sumco シリコンウェーハのサーマルドナー挙動予測方法及びシリコンウェーハの製造方法
US20230112094A1 (en) * 2021-10-11 2023-04-13 Globalwafers Co., Ltd. Modeling thermal donor formation and target resistivity for single crystal silicon ingot production
JP7673696B2 (ja) * 2022-06-29 2025-05-09 信越半導体株式会社 シリコン単結晶基板の酸素濃度の上限値の決定方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2688137B2 (ja) 1991-12-04 1997-12-08 信越半導体株式会社 シリコン単結晶の引上げ方法
JP3985768B2 (ja) 2003-10-16 2007-10-03 株式会社Ｓｕｍｃｏ 高抵抗シリコンウェーハの製造方法
CN100461349C (zh) 2003-10-21 2009-02-11 株式会社上睦可 高电阻硅晶片的制造方法以及外延晶片及soi晶片的制造方法
TWI290182B (en) * 2004-01-27 2007-11-21 Sumco Techxiv Corp Method for predicting precipitation behavior of oxygen in silicon single crystal, determining production parameter thereof, and storage medium storing program for predicting precipitation behavior of oxygen in silicon single crystal
JP4656284B2 (ja) * 2004-04-02 2011-03-23 株式会社Ｓｕｍｃｏ 高抵抗シリコンウェーハの製造方法
US7521382B2 (en) * 2005-05-19 2009-04-21 Memc Electronic Materials, Inc. High resistivity silicon structure and a process for the preparation thereof
TW200818327A (en) * 2006-09-29 2008-04-16 Sumco Techxiv Corp Silicon wafer heat treatment method
US8263484B2 (en) * 2009-03-03 2012-09-11 Sumco Corporation High resistivity silicon wafer and method for manufacturing the same
FR2964459B1 (fr) * 2010-09-02 2012-09-28 Commissariat Energie Atomique Procede de cartographie de la concentration en oxygene
FR2974180B1 (fr) * 2011-04-15 2013-04-26 Commissariat Energie Atomique Procede de determination de la concentration en oxygene interstitiel.

Also Published As

Publication number Publication date
US9111883B2 (en) 2015-08-18
JP5772553B2 (ja) 2015-09-02
DE112012004731T5 (de) 2014-07-31
WO2013084410A1 (ja) 2013-06-13
JP2013119486A (ja) 2013-06-17
US20140363904A1 (en) 2014-12-11

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