KR20140090979A - 반도성을 가지는 화합물과 이와 관련된 조성물 및 소자 - Google Patents

반도성을 가지는 화합물과 이와 관련된 조성물 및 소자 Download PDF

Info

Publication number
KR20140090979A
KR20140090979A KR1020147009221A KR20147009221A KR20140090979A KR 20140090979 A KR20140090979 A KR 20140090979A KR 1020147009221 A KR1020147009221 A KR 1020147009221A KR 20147009221 A KR20147009221 A KR 20147009221A KR 20140090979 A KR20140090979 A KR 20140090979A
Authority
KR
South Korea
Prior art keywords
formula
linear
compound
independently
rti
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020147009221A
Other languages
English (en)
Korean (ko)
Inventor
하칸 우스타
다미엥 부디네
조단 퀸
안토니오 파체티
Original Assignee
폴리에라 코퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 폴리에라 코퍼레이션 filed Critical 폴리에라 코퍼레이션
Publication of KR20140090979A publication Critical patent/KR20140090979A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
KR1020147009221A 2011-09-12 2012-09-10 반도성을 가지는 화합물과 이와 관련된 조성물 및 소자 Withdrawn KR20140090979A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161533785P 2011-09-12 2011-09-12
US61/533,785 2011-09-12
PCT/US2012/054502 WO2013039842A1 (en) 2011-09-12 2012-09-10 Compounds having semiconducting properties and related compositions and devices

Publications (1)

Publication Number Publication Date
KR20140090979A true KR20140090979A (ko) 2014-07-18

Family

ID=47116279

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147009221A Withdrawn KR20140090979A (ko) 2011-09-12 2012-09-10 반도성을 가지는 화합물과 이와 관련된 조성물 및 소자

Country Status (6)

Country Link
US (2) US20130062598A1 (OSRAM)
EP (1) EP2755978A1 (OSRAM)
JP (1) JP6021922B2 (OSRAM)
KR (1) KR20140090979A (OSRAM)
CN (1) CN103958520B (OSRAM)
WO (1) WO2013039842A1 (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150108918A (ko) * 2013-01-22 2015-09-30 니폰 가야꾸 가부시끼가이샤 용액 프로세스용 유기 반도체 재료 및 유기 반도체 디바이스
KR20190137487A (ko) * 2018-06-01 2019-12-11 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104854111A (zh) 2012-12-03 2015-08-19 巴斯夫欧洲公司 用于有机电子器件的杂并苯化合物
WO2015023804A1 (en) 2013-08-13 2015-02-19 Polyera Corporation Optimization of electronic display areas
CN105793781B (zh) 2013-08-27 2019-11-05 飞利斯有限公司 具有可挠曲电子构件的可附接装置
WO2015031426A1 (en) 2013-08-27 2015-03-05 Polyera Corporation Flexible display and detection of flex state
WO2015038684A1 (en) 2013-09-10 2015-03-19 Polyera Corporation Attachable article with signaling, split display and messaging features
TWI653522B (zh) 2013-12-24 2019-03-11 美商飛利斯有限公司 動態可撓物品
EP3087812B9 (en) 2013-12-24 2021-06-09 Flexterra, Inc. Support structures for an attachable, two-dimensional flexible electronic device
WO2015100396A1 (en) 2013-12-24 2015-07-02 Polyera Corporation Support structures for a flexible electronic component
WO2015100224A1 (en) 2013-12-24 2015-07-02 Polyera Corporation Flexible electronic display with user interface based on sensed movements
CN106662808A (zh) 2014-02-07 2017-05-10 正交公司 可交联的氟化光聚合物
US20150227245A1 (en) 2014-02-10 2015-08-13 Polyera Corporation Attachable Device with Flexible Electronic Display Orientation Detection
JP6247560B2 (ja) * 2014-02-20 2017-12-13 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
US10261634B2 (en) 2014-03-27 2019-04-16 Flexterra, Inc. Infrared touch system for flexible displays
WO2015183567A1 (en) 2014-05-28 2015-12-03 Polyera Corporation Low power display updates
WO2015184045A2 (en) 2014-05-28 2015-12-03 Polyera Corporation Device with flexible electronic components on multiple surfaces
JP2016001659A (ja) * 2014-06-11 2016-01-07 株式会社東海理化電機製作所 有機半導体材料
JP6243032B2 (ja) * 2014-07-18 2017-12-06 富士フイルム株式会社 有機半導体膜形成用組成物、並びに、有機半導体素子及びその製造方法
WO2016014980A1 (en) 2014-07-24 2016-01-28 E.T.C.S.R.L. Organic electroluminescent transistor
EP2978037A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978035A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
WO2016138356A1 (en) 2015-02-26 2016-09-01 Polyera Corporation Attachable device having a flexible electronic component
KR101928284B1 (ko) 2015-03-23 2018-12-12 닛뽄 가야쿠 가부시키가이샤 유기 화합물, 유기 반도체 재료, 유기 박막 및 그의 제조 방법, 유기 반도체 조성물, 그리고 유기 반도체 디바이스
US10254795B2 (en) 2015-05-06 2019-04-09 Flexterra, Inc. Attachable, flexible display device with flexible tail
JP6526585B2 (ja) * 2016-02-29 2019-06-05 日本化薬株式会社 縮合多環芳香族化合物及びその用途
WO2017150474A1 (ja) * 2016-02-29 2017-09-08 国立研究開発法人産業技術総合研究所 有機半導体組成物及びそれらからなる有機薄膜、並びにその用途
JP6833445B2 (ja) * 2016-10-18 2021-02-24 山本化成株式会社 有機トランジスタ

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4832304B2 (ja) * 2004-08-31 2011-12-07 出光興産株式会社 芳香族アミン誘導体及びそれを用いた有機エレクトロルミネッセンス素子
US7605394B2 (en) 2004-12-23 2009-10-20 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
KR100854907B1 (ko) * 2005-01-19 2008-08-28 고쿠리츠다이가쿠호진 히로시마다이가쿠 신규한 축합 다환 방향족 화합물 및 그의 이용
US7678463B2 (en) 2005-12-20 2010-03-16 Northwestern University Intercalated superlattice compositions and related methods for modulating dielectric property
TWI462359B (zh) * 2006-10-20 2014-11-21 Nippon Kayaku Kk 場效電晶體及其製造方法
JP4958119B2 (ja) * 2006-10-25 2012-06-20 国立大学法人広島大学 新規な縮合多環芳香族化合物およびその製造方法、並びにその利用
KR20080100982A (ko) 2007-05-15 2008-11-21 삼성전자주식회사 헤테로아센 화합물, 이를 포함하는 유기 박막 및 상기박막을 포함하는 전자 소자
JP5101939B2 (ja) * 2007-07-12 2012-12-19 山本化成株式会社 有機トランジスタ
JP5481850B2 (ja) * 2008-01-23 2014-04-23 東ソー株式会社 ヘテロアセン誘導体、その前駆化合物及びそれらの製造方法
JP5487655B2 (ja) * 2008-04-17 2014-05-07 株式会社リコー ［１］ベンゾチエノ［３，２‐ｂ］［１］ベンゾチオフェン化合物およびその製造方法、それを用いた有機電子デバイス
JP5428104B2 (ja) * 2008-05-23 2014-02-26 日本化薬株式会社 有機半導体組成物
JP2009302328A (ja) * 2008-06-13 2009-12-24 Nippon Kayaku Co Ltd 有機トランジスタ、およびこれが用いられた有機半導体素子
WO2010024388A1 (ja) * 2008-08-29 2010-03-04 出光興産株式会社 有機薄膜トランジスタ用化合物及びそれを用いた有機薄膜トランジスタ
EP2402348B1 (en) * 2009-02-27 2017-04-12 Nippon Kayaku Kabushiki Kaisha Field effect transistor
WO2011004869A1 (ja) * 2009-07-10 2011-01-13 住友化学株式会社 置換ベンゾカルコゲノアセン化合物、該化合物を含有する薄膜及び該薄膜を含有する有機半導体デバイス
JP5655301B2 (ja) * 2009-12-22 2015-01-21 東ソー株式会社 有機半導体材料
US8643001B2 (en) 2010-12-23 2014-02-04 Samsung Electronics Co. Ltd. Semiconductor composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150108918A (ko) * 2013-01-22 2015-09-30 니폰 가야꾸 가부시끼가이샤 용액 프로세스용 유기 반도체 재료 및 유기 반도체 디바이스
KR20190137487A (ko) * 2018-06-01 2019-12-11 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치

Also Published As

Publication number Publication date
US9911927B2 (en) 2018-03-06
US20130062598A1 (en) 2013-03-14
WO2013039842A1 (en) 2013-03-21
JP6021922B2 (ja) 2016-11-09
US20160351832A1 (en) 2016-12-01
CN103958520B (zh) 2017-03-22
CN103958520A (zh) 2014-07-30
EP2755978A1 (en) 2014-07-23
JP2014531435A (ja) 2014-11-27

Similar Documents

Publication Publication Date Title
KR20140090979A (ko) 반도성을 가지는 화합물과 이와 관련된 조성물 및 소자
Drolet et al. 2, 7‐carbazolenevinylene‐based oligomer thin‐film transistors: high mobility through structural ordering
EP2240970B1 (en) Perylene semiconductors and methods of preparation and use thereof
Meng et al. Oligofluorene− thiophene derivatives as high-performance semiconductors for organic thin film transistors
KR101680910B1 (ko) 반도체 재료 및 이의 제조 방법 및 사용
US7902363B2 (en) Diimide-based semiconductor materials and methods of preparing and using the same
TWI534173B (zh) 稠合無規雙噻吩－乙烯共聚物
KR101844106B1 (ko) 티오시아네이토 또는 이소티오시아네이토 치환된 나프탈렌 디이미드 및 릴렌 디이미드 화합물 및 n형 반도체로서의 그의 용도
Peltier et al. Electron-deficient dihydroindaceno-dithiophene regioisomers for n-type organic field-effect transistors
KR101607421B1 (ko) 유기 반도체 장치의 제조 방법
US9067886B2 (en) Compounds having semiconducting properties and related compositions and devices
US8598575B2 (en) Semiconducting compounds and related compositions and devices
US9312501B2 (en) Semiconducting compounds and optoelectronic devices incorporating same
US8513445B2 (en) Polycyclic aromatic molecular semiconductors and related compositions and devices
US8993711B2 (en) Semiconducting polymers and optoelectronic devices incorporating same
TW201730195A (zh) 二噻吩噻二唑半導體及其元件
US9812645B2 (en) Perylene-based semiconductors
WO2016071140A1 (en) Phenacene compounds for organic electronics
US9908967B2 (en) Polymeric semiconductors and related devices
TW201333156A (zh) 用於製備有機半導體裝置之方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20140407

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid